JPH034430A - Electron tube and voltage divider resistor element to be installed therein - Google Patents
Electron tube and voltage divider resistor element to be installed thereinInfo
- Publication number
- JPH034430A JPH034430A JP13598989A JP13598989A JPH034430A JP H034430 A JPH034430 A JP H034430A JP 13598989 A JP13598989 A JP 13598989A JP 13598989 A JP13598989 A JP 13598989A JP H034430 A JPH034430 A JP H034430A
- Authority
- JP
- Japan
- Prior art keywords
- oxide
- electron tube
- resistance
- electrode
- resistor element
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000758 substrate Substances 0.000 claims abstract description 14
- 229910044991 metal oxide Inorganic materials 0.000 claims abstract description 11
- 229910001925 ruthenium oxide Inorganic materials 0.000 claims abstract description 10
- WOCIAKWEIIZHES-UHFFFAOYSA-N ruthenium(iv) oxide Chemical compound O=[Ru]=O WOCIAKWEIIZHES-UHFFFAOYSA-N 0.000 claims abstract description 10
- 239000000919 ceramic Substances 0.000 claims abstract description 6
- 150000004706 metal oxides Chemical class 0.000 claims description 9
- 238000000605 extraction Methods 0.000 claims description 6
- 239000005388 borosilicate glass Substances 0.000 claims description 3
- 229910052751 metal Inorganic materials 0.000 claims description 3
- 239000002184 metal Substances 0.000 claims description 3
- 239000011521 glass Substances 0.000 abstract description 10
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 abstract description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 3
- 238000009413 insulation Methods 0.000 abstract description 3
- ZPPSOOVFTBGHBI-UHFFFAOYSA-N lead(2+);oxido(oxo)borane Chemical compound [Pb+2].[O-]B=O.[O-]B=O ZPPSOOVFTBGHBI-UHFFFAOYSA-N 0.000 abstract description 3
- 229910052814 silicon oxide Inorganic materials 0.000 abstract description 3
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 abstract 2
- 239000002075 main ingredient Substances 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 12
- 239000000292 calcium oxide Substances 0.000 description 5
- ODINCKMPIJJUCX-UHFFFAOYSA-N calcium oxide Inorganic materials [Ca]=O ODINCKMPIJJUCX-UHFFFAOYSA-N 0.000 description 5
- 239000011247 coating layer Substances 0.000 description 5
- 238000001035 drying Methods 0.000 description 3
- 239000003960 organic solvent Substances 0.000 description 3
- 229920001721 polyimide Polymers 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 239000004962 Polyamide-imide Substances 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 2
- 239000011230 binding agent Substances 0.000 description 2
- BRPQOXSCLDDYGP-UHFFFAOYSA-N calcium oxide Chemical compound [O-2].[Ca+2] BRPQOXSCLDDYGP-UHFFFAOYSA-N 0.000 description 2
- 238000010304 firing Methods 0.000 description 2
- 229910002804 graphite Inorganic materials 0.000 description 2
- 239000010439 graphite Substances 0.000 description 2
- 229920006015 heat resistant resin Polymers 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 239000000395 magnesium oxide Substances 0.000 description 2
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 2
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000000149 penetrating effect Effects 0.000 description 2
- 229920002312 polyamide-imide Polymers 0.000 description 2
- 238000001556 precipitation Methods 0.000 description 2
- 238000007639 printing Methods 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 229910052783 alkali metal Inorganic materials 0.000 description 1
- 150000001340 alkali metals Chemical class 0.000 description 1
- 239000011324 bead Substances 0.000 description 1
- 239000005385 borate glass Substances 0.000 description 1
- 229910052793 cadmium Inorganic materials 0.000 description 1
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 description 1
- 239000011575 calcium Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 239000010419 fine particle Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 238000005065 mining Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229920005575 poly(amic acid) Polymers 0.000 description 1
- 229920003217 poly(methylsilsesquioxane) Polymers 0.000 description 1
- 239000009719 polyimide resin Substances 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 229910052723 transition metal Inorganic materials 0.000 description 1
- 150000003624 transition metals Chemical class 0.000 description 1
- 239000002966 varnish Substances 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Abstract
Description
【発明の詳細な説明】
［発明の目的］
（産業上の利用分野）
本発明は、カラーブラウン管等の電子管内に組み込まれ
る電子管内蔵用分圧抵抗素子に関する。DETAILED DESCRIPTION OF THE INVENTION [Object of the Invention] (Industrial Application Field) The present invention relates to a voltage dividing resistor element built into an electron tube such as a color cathode ray tube.
（従来の技術）
従来、電子管例えばカラーテレビジョン受像機に用いら
れるカラーブラウン管において、陽極電圧以外にコンバ
ージェンス電極やフォーカス電極等に供給される高電圧
が必要とされるものがある。(Prior Art) Conventionally, some electron tubes, such as color cathode ray tubes used in color television receivers, require a high voltage to be supplied to convergence electrodes, focus electrodes, etc. in addition to the anode voltage.
この様な場合、カラーブラウン管のステム部より高電圧
を供給すると、耐電圧の面から問題を生じるので、カラ
ーブラウン管内に電子銃と共に分圧用の抵抗器を電子管
内蔵分圧抵抗素子として、組み込み、これによって陽極
電圧を分圧してそれぞれの電極に高電圧を供給しようと
する方式が提案されている。In such a case, if a high voltage is supplied from the stem of the color cathode ray tube, a problem will arise in terms of withstand voltage, so a voltage dividing resistor is built into the color cathode ray tube along with the electron gun as a voltage dividing resistor element built into the electron tube. A method has been proposed in which a high voltage is supplied to each electrode by dividing the anode voltage.
この様な分圧抵抗素子が組み込まれたカラーブラウン管
の一例を第１図に示す。図中、１は真空容器であり、こ
の真空容器１のネック部ＩＡ内に電子銃構体２が配置さ
れており、この電子銃構体２には３個のカソードＫに対
し、共通に第１グリツド電極Ｇ１、第２グリツド電極Ｇ
２、第３グリフド電極Ｇ３、第４グリツドＧ４、第５グ
リツド電極Ｇ５、第６グリツド電極Ｇ６、第７グリツド
電極Ｇ７、第８グリツド電極Ｇ８が順次同軸上に配置さ
れ、第８グリツド電極Ｇ８の後段には、コンバージェン
ス電極３が配置されている。各グリッド電極Ｇ１、Ｇ２
．Ｇ３．Ｇ４．Ｇ５、Ｇ６゜Ｇ７およびＧ８は、相互に
所定の位置関係を維持して、ビードガラス４によって機
械的に保持されている。また、第３グリツド電極Ｇ３と
第５グリツド電極Ｇ５とは、導線５により電気的に接続
されており、さらにコンバージ１．ンス電極３は、第８
グリツド電極Ｇ８と溶接により電気的に接続されている
。An example of a color cathode ray tube incorporating such a voltage dividing resistor element is shown in FIG. In the figure, 1 is a vacuum vessel, and an electron gun assembly 2 is disposed in the neck part IA of the vacuum vessel 1. This electron gun assembly 2 has a first grid in common for three cathodes K. Electrode G1, second grid electrode G
2. The third grid electrode G3, the fourth grid electrode G4, the fifth grid electrode G5, the sixth grid electrode G6, the seventh grid electrode G7, and the eighth grid electrode G8 are arranged coaxially in order, and the eighth grid electrode G8 A convergence electrode 3 is arranged at the rear stage. Each grid electrode G1, G2
．． G3. G4. G5, G6, G7 and G8 are mechanically held by the bead glass 4 while maintaining a predetermined positional relationship with each other. Further, the third grid electrode G3 and the fifth grid electrode G5 are electrically connected by a conductive wire 5, and the convergence 1. The eighth electrode 3
It is electrically connected to grid electrode G8 by welding.
この様な電子銃構体２に対１．て、分圧抵抗素子６が取
り付けられており、この分圧抵抗素子６に設けられた高
圧の引き出し電極７ａ、７ｂ、７ｅが、第７グリツド電
極Ｇ７、第６グリツド電極Ｇ６、第５グリツド電極Ｇ５
と接続されている。For such an electron gun structure 2, 1. A voltage dividing resistor element 6 is attached, and high voltage extraction electrodes 7a, 7b, 7e provided on the voltage dividing resistor element 6 are connected to the seventh grid electrode G7, the sixth grid electrode G6, and the fifth grid electrode. G5
is connected to.
また、コンバージェンス電極３への引き出し電極８がコ
ンバージェンス電極３ど接続され、更にアース側の引き
出し電極９が、ステムｌｌに埋設されたアース電極ビン
１２に接続されている。Further, a lead-out electrode 8 to the convergence electrode 3 is connected to the convergence electrode 3, and a ground-side lead-out electrode 9 is connected to a ground electrode bin 12 embedded in the stem 11.
一方、真空容器１のファンネル部１ｂの内壁には、ネッ
ク部１ａの内壁まで伸びるグラファイト導電膜１３か゛
被着されており、ファンネル部１ｂに設けられた高電圧
供給ボタン（陽極ボタンで図中では示していない）を通
じて陽極電圧が供給される。そして、コンバージェンス
電極３には、導電スプリング１４が設けられており、こ
の導電スプリング１４がグラファイト導電膜１３と接触
することにより、コンバージェンス電極３、第８グリツ
ド電極Ｇ８及び分圧抵抗素子６のコンバージェンス引出
し電極９に陽極電圧が供給され、高圧の引き出し電極７
ａ、７ｂ、７ｅに発生する分圧電圧が第７グリツド電極
Ｇ７、第６グリツド電極Ｇ６、及び第５グリツド電極Ｇ
５に供給される。On the other hand, a graphite conductive film 13 is coated on the inner wall of the funnel part 1b of the vacuum container 1, and extends to the inner wall of the neck part 1a. (not shown). The convergence electrode 3 is provided with a conductive spring 14, and when the conductive spring 14 comes into contact with the graphite conductive film 13, the convergence electrode 3, the eighth grid electrode G8, and the voltage dividing resistor element 6 are connected to each other. Anode voltage is supplied to the electrode 9, and the high voltage extraction electrode 7
The divided voltages generated at a, 7b, and 7e are applied to the seventh grid electrode G7, the sixth grid electrode G6, and the fifth grid electrode G.
5.
この様なカラーブラウン管内に内蔵される分圧抵抗素子
６は、例えば第２図（ａ） 、 （ｂ）及び第３図に示
すように構成され、第２図（ａ）は外表部を形成する絶
縁被膜層上から透視した状態の分圧抵抗素子６を示し、
第２図（ｔ））はＡ−Ａ線に従う断面図である。The voltage dividing resistor element 6 built into such a color cathode ray tube is constructed as shown in FIGS. 2(a), (b) and 3, for example, and FIG. The partial voltage resistance element 6 is shown as seen through from above the insulating coating layer,
FIG. 2(t)) is a sectional view taken along line A-A.
ずなわぢ、酸化アルミニウム等のセラミック製の絶縁基
板２１上には、例えば酸化ルテニウムを含む金属酸化物
と硼旺鉛系のガラスよりなる電極材料を印刷、乾燥、焼
成した電極層２２ａと引出し電極２２１）からなる端子
部２２が形成されると共に、各端子部２２間には、所定
の抵抗値を有する酸化ルテニウムを含む金属酸化物と硼
蛙酸鉛系のガラスよりなる抵抗材料をジグザグパターン
に印刷、乾燥、焼成した抵抗体層２３が形成されている
。更に、この抵抗体層２３を覆うように絶縁被膜層２４
が形成されている。この例の場合、第３図に示すように
引出し電極２２ｂは、端子部２２で絶縁基板２１を貫通
しているスルーホール２２ｅの上下からかしめられでい
る。On an insulating substrate 21 made of ceramic such as aluminum oxide, an electrode layer 22a and a lead electrode are formed by printing, drying, and firing an electrode material made of a metal oxide containing ruthenium oxide and a borosilicate glass, for example. 221) is formed, and a resistive material made of metal oxide containing ruthenium oxide and lead borate glass having a predetermined resistance value is formed in a zigzag pattern between each terminal part 22. A resistor layer 23 is formed by printing, drying, and firing. Furthermore, an insulating coating layer 24 is formed to cover this resistor layer 23.
is formed. In this example, as shown in FIG. 3, the extraction electrode 22b is caulked from above and below a through hole 22e penetrating the insulating substrate 21 at the terminal portion 22.
この様な分圧抵抗素子６に要求される条件としては、
■ カラーブラウン管製造工程中の加熱工程や耐圧処理
で安定であること、
■ 動作中に発生するジュール熱による抵抗値変化やガ
ス放出が少ないこと、
■ 散乱電子が当たったとき、二次電子放出源にならな
いこと、
■ 電子銃の電界分布を乱し、放電したり、馬子の軌道
をずらＩ７たすしないこと、
等があげられる。The conditions required for such a voltage dividing resistor element 6 are: ■ It must be stable during the heating process and pressure resistance treatment during the color cathode ray tube manufacturing process, and ■ It must be stable against changes in resistance value and gas release due to Joule heat generated during operation. The few things that can be mentioned include: ■ not becoming a source of secondary electron emission when struck by scattered electrons, and ■ not disturbing the electric field distribution of the electron gun, causing discharge or shifting the trajectory of Umako.
本発明者らは、市販の高圧抵抗用の抵抗ペースト、例え
ば住友金属鉱山製のＲＫシリーズ等を用いて分圧抵抗素
子を作製し、試験を行ったところ、しば１、ば不規則な
時間から急激な抵抗値及び分割比の変動を起し、信頼性
に欠けるという問題があった。The present inventors fabricated a voltage dividing resistance element using a commercially available resistance paste for high voltage resistance, such as the RK series manufactured by Sumitomo Metal Mining, and conducted tests. There was a problem in that the resistance value and the division ratio suddenly fluctuated, resulting in a lack of reliability.
（発明が解決しようとする課題）
本発明は、上記事情に鑑みなされたもので、電子管内蔵
の高温、高圧の条件下で、抵抗値及び分割比の変動の少
ない信頼性に優れた分圧抵抗素子を提供することを目的
としている。(Problems to be Solved by the Invention) The present invention has been made in view of the above circumstances, and is a highly reliable voltage dividing resistor with little variation in resistance value and division ratio under high temperature and high pressure conditions with a built-in electron tube. The purpose is to provide devices.
［発明の構成］
（課題を解決するための手段）
本発明は、酸化アルミニウム等のセラミック製の絶縁基
板上に、酸化ルテニウムを含む金属酸化物と硼硅酸鉛系
のフリットガラス系からなる抵抗体層が形成され、この
所定の位置から金属製の引き出し電極が形成されてなる
電子管内蔵用分圧抵抗素子において、上記抵抗体層がＢ
ａの酸化物を含むことを特徴とする。[Structure of the Invention] (Means for Solving the Problems) The present invention provides a resistor made of a metal oxide containing ruthenium oxide and a frit glass based on lead borosilicate on an insulating substrate made of ceramic such as aluminum oxide. In the voltage dividing resistor element for built-in electron tube, in which a body layer is formed and a metal extraction electrode is formed from this predetermined position, the resistor layer is B.
It is characterized by containing an oxide of a.
さらに本発明は、真空容器内に、複数の電極が配置され
、これら電極に沿って本発明の電子管内蔵用分圧抵抗素
子が固定され、この抵抗素子の端子が電極に電気的に接
続されたことを特徴とする。Further, in the present invention, a plurality of electrodes are arranged in a vacuum container, a voltage dividing resistor element for incorporating an electron tube according to the present invention is fixed along these electrodes, and terminals of this resistor element are electrically connected to the electrodes. It is characterized by
すなわち、従来の高圧抵抗用の抵抗ペーストを用いて作
製した分圧抵抗素子の試験で、抵抗値及び分割比の変動
を起した物を詳細に調べた所、抵抗温度特性、耐熱性改
善の為に添加されているＣａＯのＣａがイオン化し、イ
オン析出を起していることがわかった。この為、抵抗温
度特性、耐熱性を劣化させないでイオン析出を起し難い
添加材を検討した所、Ｂａの酸化物が適当であることが
判明し、本発明を完成させた。In other words, in tests of voltage dividing resistor elements made using conventional resistance paste for high voltage resistors, we investigated in detail the items that caused fluctuations in resistance value and division ratio, and found that we were able to improve resistance temperature characteristics and heat resistance. It was found that Ca in CaO added to the oxide was ionized, causing ion precipitation. For this reason, we investigated additives that would not cause ion precipitation without deteriorating the resistance temperature characteristics and heat resistance, and it was found that Ba oxide was suitable, and the present invention was completed.
本発明に係わるＢａの酸化物としては、Ｂ ａ Ｏｓる
。The Ba oxide according to the present invention is BaOs.
（作 用）
この発明によれば、従来の高圧抵抗用の抵抗ペーストに
含まれるＣａＯのかわりに、Ｂａの酸化物を含んでいる
ので、電子管内蔵における特殊な条件下でも、抵抗値及
び分割比の変動の起こりにくい信頼性の高い電子管内蔵
用分圧抵抗素子および電子管が得られる。(Function) According to the present invention, since it contains Ba oxide instead of CaO contained in the conventional resistance paste for high-voltage resistors, the resistance value and division ratio can be improved even under special conditions in the built-in electron tube. A highly reliable voltage dividing resistor element for built-in an electron tube and an electron tube that are less likely to fluctuate can be obtained.
（実施例）
以下、図面を参照して、この発明の一実施例を説明する
。(Example) Hereinafter, an example of the present invention will be described with reference to the drawings.
この発明の分圧抵抗素子は第２図（ａ） 、（ｂ）に示
すように構成される。尚、−収約な構造は従来例と同様
なので、同一図面を用いて説明することにする。The voltage dividing resistor element of the present invention is constructed as shown in FIGS. 2(a) and 2(b). Incidentally, since the compact structure is the same as that of the conventional example, it will be explained using the same drawing.
即ち、２１は絶縁基板であり、この絶縁基板２１は酸化
アルミニウムを主成分に、他に酸化硅素、酸化マグネシ
ウム、酸化カルシウム等を含有したセラミックからなっ
ている。この絶縁基板２１中に含まれるアルカリ金属の
総量は、使用中の耐電圧特性の劣化を避けるため０．１
％以下であることが望ましい。この絶縁基板２１の電極
引き出しの所定の位置には、スルーホール２２ｃが形成
されている。That is, 21 is an insulating substrate, and this insulating substrate 21 is made of ceramic containing aluminum oxide as a main component and also silicon oxide, magnesium oxide, calcium oxide, etc. The total amount of alkali metal contained in this insulating substrate 21 is set to 0.1 to avoid deterioration of withstand voltage characteristics during use.
% or less. A through hole 22c is formed in the insulating substrate 21 at a predetermined position where the electrode is drawn out.
このスルーホール２２ｃが所定の位置についた絶縁基板
２１上に酸化ルテニウムを含む金属酸化物と硼硅酸鉛系
のフリットガラスからなる低抵抗の電極層２２ａと、酸
化ルテニウムとＢａの酸化物とを含む金属酸化物と硼硅
酸鉛系のフリットガラス系からなる高抵抗の抵抗体層２
３が形成されている。更に、この抵抗体層２３上には絶
縁被覆層２５が形成されている。この絶縁被膜層２５は
ガラス若しくはポリイミド等の耐熱性樹脂からなる。A low-resistance electrode layer 22a made of a metal oxide containing ruthenium oxide and lead borosilicate-based frit glass is formed on the insulating substrate 21 with the through hole 22c in a predetermined position, and an oxide of ruthenium oxide and Ba. A high-resistance resistor layer 2 made of metal oxide containing metal oxide and lead borosilicate frit glass system.
3 is formed. Furthermore, an insulating coating layer 25 is formed on this resistor layer 23. This insulating coating layer 25 is made of glass or heat-resistant resin such as polyimide.
次に、この分圧抵抗素子の好ましい製造方法を説明する
。Next, a preferred method of manufacturing this voltage dividing resistor element will be explained.
酸化アルミニウムを主成分に、他に酸化硅素、酸化マグ
ネシウム、酸化カルシウム等を含有したセラミックから
なる絶縁基板２１のスルーホールの位置に、酸化ルテニ
ウムを含む金属酸化物と硼硅酸鉛系のフリットガラスと
有機ビヒクルからなる低抵抗の抵抗ペーストをスクリー
ン印刷機を使って所定の形状に印刷し、１００−１５０
’ｃの温度で３０分〜１時間程度乾燥し、有機溶剤を除
去する。Metal oxide containing ruthenium oxide and lead borosilicate frit glass are placed in the through holes of an insulating substrate 21 made of ceramic mainly composed of aluminum oxide and also containing silicon oxide, magnesium oxide, calcium oxide, etc. A low-resistance resistive paste consisting of
The organic solvent is removed by drying at a temperature of 'c' for about 30 minutes to 1 hour.
次いで、酸化ルテニウムとＢａの酸化物とを含む金属酸
化物と硼硅酸鉛系のフリットガラスと有機ビヒクルから
なる高抵抗の抵抗ペーストを所定の抵抗値及び分割比に
なるように、スクリーン印刷機を使って印刷する。その
後、１００−１５０”Ｃの温度で３０分〜１時間程度乾
燥し、有機溶剤を除去し、更に８００〜９５０℃の温度
で焼成し、バインダーの分解とガラス化を行い抵抗体層
２３を形成する。Next, a high resistance paste consisting of metal oxide containing ruthenium oxide and Ba oxide, lead borosilicate frit glass, and organic vehicle is applied to a screen printing machine to have a predetermined resistance value and division ratio. Print using . Thereafter, it is dried at a temperature of 100-150"C for about 30 minutes to 1 hour to remove the organic solvent, and then fired at a temperature of 800-950"C to decompose the binder and vitrify it, forming the resistor layer 23. do.
次いで、硼硅酸鉛ガラスを主成分に抵抗体との反応防止
用に鉄、ニッケル、コバルト、亜鉛、銅、ジルコニウム
、カドミウムの中がら選ばれた少なくとも１種の遷移金
属の酸化物を含むガラスペーストを所定のパターンにス
クリーン印刷機を使って印刷する。その後、ｔｏｏ −
１５０”Ｃの温度で３０分〜１時間程度乾燥し、有機溶
剤を除去し、更に５８０〜６５０℃の温度で焼成し、バ
インダーの分解とガラス化を行い絶縁被覆層を形成する
。Next, a glass containing lead borosilicate glass as a main component and an oxide of at least one transition metal selected from iron, nickel, cobalt, zinc, copper, zirconium, and cadmium to prevent reaction with the resistor. Print the paste in a predetermined pattern using a screen printer. Then too-
It is dried at a temperature of 150"C for about 30 minutes to 1 hour to remove the organic solvent, and then fired at a temperature of 580 to 650C to decompose the binder and vitrify it to form an insulating coating layer.
また、絶縁被覆は、ポリイミドまたはポリアミドイミド
を主成分とする、耐熱性の樹脂のフェス前駆体のポリア
ミック酸ワニスを被着、焼成１．て得られたポリイミド
樹脂層またはポリアミドイミド樹脂層を用いたり、また
ポリイミド樹脂層またはポリアミドイミド樹脂層は、フ
ィラーとして絶縁性の酸化物粒子や窒化物粒子であるＳ
ｉ ０２ 。For the insulation coating, a polyamic acid varnish, which is a heat-resistant resin face precursor mainly composed of polyimide or polyamide-imide, is applied and fired. A polyimide resin layer or a polyamide-imide resin layer obtained by
i02.
Ａｇ２Ｏ３、Ｓｉ３Ｎ４等の微細粒を含有していても構
わない。It may contain fine particles such as Ag2O3 and Si3N4.
最後に第３図に示すように端子部２２で絶縁基板２１に
貫通しているスルーホール２２ｅの」１下より、引出し
電極２２ｂをかしめる。Finally, as shown in FIG. 3, the lead electrode 22b is caulked from below the through hole 22e penetrating the insulating substrate 21 at the terminal portion 22.
ところで本発明者等は、分圧抵抗素子として全抵抗値が
１０００ＭΩとし、本発明の分圧抵抗素子と、従来の分
圧抵抗素子とを作製し、フンバージエンスミ極端子３と
アース電極端子１０の間に４５ｋＶ−ＤＣの電圧を印加
し、３０００時間動作させたときの全抵抗値および分割
比の変化を調べたところ、第４図に示すように、本発明
の分圧抵抗素子はａのような結果となり不規則な抵抗値
変動がなく、かつ抵抗値変動が小さいことがわかる。By the way, the present inventors set the total resistance value of the voltage dividing resistance element to 1000 MΩ, produced the voltage dividing resistance element of the present invention and the conventional voltage dividing resistance element, and connected the Humversiensmi electrode terminal 3 and the earth electrode terminal. When a voltage of 45kV-DC was applied for 10 hours and the changes in the division ratio were investigated after operation for 3000 hours, as shown in FIG. The results are as follows, indicating that there is no irregular resistance value fluctuation and that the resistance value fluctuation is small.
一方、ＣａＯを含む従来例である。ｂｌ、ｂ２゜ｂ３は
、ある時間においてマイグレーシヨンにより急激に抵抗
値が変化することがわかる。On the other hand, this is a conventional example containing CaO. It can be seen that the resistance values of bl, b2 and b3 change rapidly over a certain period of time due to migration.
尚、この発明は、ブラウン管のほか、例えば撮像管やイ
メージ管、Ｘ線管、マイクロ波管、その他界なる電位を
与える電極を備える電子管に広く適用できる。In addition to cathode ray tubes, the present invention can be widely applied to, for example, image pickup tubes, image tubes, X-ray tubes, microwave tubes, and other electron tubes equipped with electrodes that provide a field potential.
［発明の効果］
以上説明したようにこの発明によれば、抵抗値変動及び
分割比の変動の少ない信頼性に優れた電子管内蔵用分圧
抵抗素子および電子管を得ることができる。[Effects of the Invention] As described above, according to the present invention, it is possible to obtain a voltage dividing resistor element for built-in an electron tube and an electron tube with excellent reliability and little variation in resistance value and variation in division ratio.
第１図はカラーブラウン管の電子銃付近を示す断面図、
第２図は電子管内蔵用分圧抵抗素子の一実施例を示しく
ａ）は正面図、（ｂ）は（ａ）のＡ−Ａ視断面図、第３
図は第２図の端子部の要求拡大断面図、第４図は時間と
抵抗値の変化との関係を示す図である。
９・・・引き出し電極 ２１・・・絶縁基板２３
・・・抵抗体層Figure 1 is a cross-sectional view showing the vicinity of the electron gun of a color cathode ray tube.
Figure 2 shows an embodiment of a voltage dividing resistor element for built-in electron tube, in which a) is a front view, (b) is a sectional view taken along line A-A in (a), and
The figure is a required enlarged sectional view of the terminal portion of FIG. 2, and FIG. 4 is a diagram showing the relationship between time and change in resistance value. 9... Extraction electrode 21... Insulating substrate 23
...Resistor layer
Claims (2)
含む金属酸化物と硼硅酸鉛系のガラスからなる抵抗体層
が形成され、この抵抗体層の所定の位置から金属製の引
き出し電極が形成されてなる電子管内蔵用分圧抵抗素子
において、 上記抵抗体層が、Ｂａの酸化物を含むことを特徴とする
電子管内蔵用分圧抵抗素子。(1) A resistor layer made of a metal oxide containing ruthenium oxide and lead borosilicate glass is formed on a ceramic insulating substrate, and a metal extraction electrode is inserted from a predetermined position on this resistor layer. A voltage dividing resistance element for incorporating an electron tube, wherein the resistor layer contains an oxide of Ba.
極に沿って請求項１項記載の電子管内蔵用分圧抵抗素子
が固定され、この抵抗素子の端子が電極に電気的に接続
されたことを特徴とする電子管。(2) A plurality of electrodes are arranged in a vacuum container, a partial voltage resistance element for incorporating an electron tube according to claim 1 is fixed along these electrodes, and a terminal of this resistance element is electrically connected to the electrode. An electron tube characterized by:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1135989A JP2825274B2 (en) | 1989-05-31 | 1989-05-31 | Voltage-dividing resistance element and electron tube for internal electron tube |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1135989A JP2825274B2 (en) | 1989-05-31 | 1989-05-31 | Voltage-dividing resistance element and electron tube for internal electron tube |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH034430A true JPH034430A (en) | 1991-01-10 |
| JP2825274B2 JP2825274B2 (en) | 1998-11-18 |
Family
ID=15164596
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1135989A Expired - Fee Related JP2825274B2 (en) | 1989-05-31 | 1989-05-31 | Voltage-dividing resistance element and electron tube for internal electron tube |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2825274B2 (en) |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60124340A (en) * | 1983-12-08 | 1985-07-03 | Sony Corp | Resistor built in cathode ray tube |
-
1989
- 1989-05-31 JP JP1135989A patent/JP2825274B2/en not_active Expired - Fee Related
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60124340A (en) * | 1983-12-08 | 1985-07-03 | Sony Corp | Resistor built in cathode ray tube |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2825274B2 (en) | 1998-11-18 |
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