JPH0342658B2 - - Google Patents
Info
- Publication number
- JPH0342658B2 JPH0342658B2 JP13685A JP13685A JPH0342658B2 JP H0342658 B2 JPH0342658 B2 JP H0342658B2 JP 13685 A JP13685 A JP 13685A JP 13685 A JP13685 A JP 13685A JP H0342658 B2 JPH0342658 B2 JP H0342658B2
- Authority
- JP
- Japan
- Prior art keywords
- pattern
- lmr
- resist
- monochlorobenzene
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- MVPPADPHJFYWMZ-UHFFFAOYSA-N chlorobenzene Chemical compound ClC1=CC=CC=C1 MVPPADPHJFYWMZ-UHFFFAOYSA-N 0.000 claims description 9
- 239000000758 substrate Substances 0.000 claims description 9
- 238000000034 method Methods 0.000 claims description 7
- -1 naphthoquinonediazide sulfonic acid ester Chemical class 0.000 claims description 6
- 229920002120 photoresistant polymer Polymers 0.000 claims description 6
- 230000005865 ionizing radiation Effects 0.000 claims description 3
- 229920003986 novolac Polymers 0.000 claims description 3
- 239000000243 solution Substances 0.000 description 8
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 6
- 238000010894 electron beam technology Methods 0.000 description 5
- 230000035945 sensitivity Effects 0.000 description 5
- XDTMQSROBMDMFD-UHFFFAOYSA-N Cyclohexane Chemical compound C1CCCCC1 XDTMQSROBMDMFD-UHFFFAOYSA-N 0.000 description 4
- MLFHJEHSLIIPHL-UHFFFAOYSA-N isoamyl acetate Chemical compound CC(C)CCOC(C)=O MLFHJEHSLIIPHL-UHFFFAOYSA-N 0.000 description 4
- 238000000059 patterning Methods 0.000 description 4
- 238000001312 dry etching Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- JHIVVAPYMSGYDF-UHFFFAOYSA-N cyclohexanone Chemical compound O=C1CCCCC1 JHIVVAPYMSGYDF-UHFFFAOYSA-N 0.000 description 2
- 229940117955 isoamyl acetate Drugs 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000011259 mixed solution Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 150000002168 ethanoic acid esters Chemical class 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/022—Quinonediazides
- G03F7/023—Macromolecular quinonediazides; Macromolecular additives, e.g. binders
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/30—Imagewise removal using liquid means
- G03F7/32—Liquid compositions therefor, e.g. developers
- G03F7/325—Non-aqueous compositions
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13685A JPS61159638A (ja) | 1985-01-07 | 1985-01-07 | レジストパタ−ンの形成方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13685A JPS61159638A (ja) | 1985-01-07 | 1985-01-07 | レジストパタ−ンの形成方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61159638A JPS61159638A (ja) | 1986-07-19 |
| JPH0342658B2 true JPH0342658B2 (cs) | 1991-06-27 |
Family
ID=11465613
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP13685A Granted JPS61159638A (ja) | 1985-01-07 | 1985-01-07 | レジストパタ−ンの形成方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61159638A (cs) |
-
1985
- 1985-01-07 JP JP13685A patent/JPS61159638A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS61159638A (ja) | 1986-07-19 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4165395A (en) | Process for forming a high aspect ratio structure by successive exposures with electron beam and actinic radiation | |
| KR20040026105A (ko) | 미세 패턴 형성 재료, 미세 패턴 형성 방법 및 반도체장치의 제조 방법 | |
| JPS6313035A (ja) | パタ−ン形成方法 | |
| EP0199303B1 (en) | Method of forming a photoresist pattern | |
| JPS6239817B2 (cs) | ||
| JPH05326358A (ja) | 微細パターン形成方法 | |
| KR0160921B1 (ko) | 레지스트 패턴의 형성방법 | |
| JP3118887B2 (ja) | パターン形成方法 | |
| JPH0342658B2 (cs) | ||
| JPH08272107A (ja) | レジストパターンの形成方法 | |
| WO1983003485A1 (en) | Electron beam-optical hybrid lithographic resist process | |
| JPH03283418A (ja) | レジストパターン形成方法 | |
| JPS63254729A (ja) | レジストパタ−ンの形成方法 | |
| JPH02156244A (ja) | パターン形成方法 | |
| JP2712407B2 (ja) | ２層フォトレジストを用いた微細パターンの形成方法 | |
| JPH0342659B2 (cs) | ||
| JPS61241745A (ja) | ネガ型フオトレジスト組成物及びレジストパタ−ン形成方法 | |
| JPS646448B2 (cs) | ||
| JPS61131446A (ja) | レジストパタ−ン形成方法 | |
| JPH0458170B2 (cs) | ||
| JPH05291130A (ja) | 多層レジスト法及び半導体装置の製造方法 | |
| JPS63157421A (ja) | レジストパタ−ン形成方法 | |
| JPH01296620A (ja) | パターン形成方法 | |
| JPS5898924A (ja) | 微細パタ−ン形成方法 | |
| JPH02151863A (ja) | レジスト材料 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |