JPH0339584B2 - - Google Patents
Info
- Publication number
- JPH0339584B2 JPH0339584B2 JP58014449A JP1444983A JPH0339584B2 JP H0339584 B2 JPH0339584 B2 JP H0339584B2 JP 58014449 A JP58014449 A JP 58014449A JP 1444983 A JP1444983 A JP 1444983A JP H0339584 B2 JPH0339584 B2 JP H0339584B2
- Authority
- JP
- Japan
- Prior art keywords
- sensor
- diffusion region
- item
- recess
- insulating base
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000009792 diffusion process Methods 0.000 claims description 30
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 claims description 15
- 239000011521 glass Substances 0.000 claims description 13
- 238000000034 method Methods 0.000 claims description 13
- 239000000758 substrate Substances 0.000 claims description 13
- 239000004065 semiconductor Substances 0.000 claims description 11
- 238000004519 manufacturing process Methods 0.000 claims description 10
- 238000007740 vapor deposition Methods 0.000 claims description 10
- 239000008280 blood Substances 0.000 claims description 5
- 210000004369 blood Anatomy 0.000 claims description 5
- 238000005259 measurement Methods 0.000 claims description 4
- 239000002184 metal Substances 0.000 claims description 4
- 239000011093 chipboard Substances 0.000 claims description 3
- 238000005530 etching Methods 0.000 claims description 3
- 238000000151 deposition Methods 0.000 claims description 2
- 238000001465 metallisation Methods 0.000 claims description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 2
- 238000001514 detection method Methods 0.000 claims 2
- 229910052681 coesite Inorganic materials 0.000 claims 1
- 229910052906 cristobalite Inorganic materials 0.000 claims 1
- 238000005520 cutting process Methods 0.000 claims 1
- 239000000377 silicon dioxide Substances 0.000 claims 1
- 235000012239 silicon dioxide Nutrition 0.000 claims 1
- 229910052682 stishovite Inorganic materials 0.000 claims 1
- 229910052905 tridymite Inorganic materials 0.000 claims 1
- 150000002500 ions Chemical class 0.000 description 11
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 5
- 229910052799 carbon Inorganic materials 0.000 description 5
- 239000003792 electrolyte Substances 0.000 description 4
- 238000009413 insulation Methods 0.000 description 4
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 229910002092 carbon dioxide Inorganic materials 0.000 description 1
- 239000001569 carbon dioxide Substances 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 239000008151 electrolyte solution Substances 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 239000012466 permeate Substances 0.000 description 1
- 238000000742 single-metal deposition Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
- G01N27/26—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
- G01N27/403—Cells and electrode assemblies
- G01N27/414—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS
Landscapes
- Life Sciences & Earth Sciences (AREA)
- Chemical & Material Sciences (AREA)
- Health & Medical Sciences (AREA)
- Physics & Mathematics (AREA)
- Molecular Biology (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- Engineering & Computer Science (AREA)
- Analytical Chemistry (AREA)
- Biochemistry (AREA)
- General Health & Medical Sciences (AREA)
- General Physics & Mathematics (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58014449A JPS59141056A (ja) | 1983-01-31 | 1983-01-31 | 半導体センサおよびその製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58014449A JPS59141056A (ja) | 1983-01-31 | 1983-01-31 | 半導体センサおよびその製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS59141056A JPS59141056A (ja) | 1984-08-13 |
| JPH0339584B2 true JPH0339584B2 (cg-RX-API-DMAC7.html) | 1991-06-14 |
Family
ID=11861339
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58014449A Granted JPS59141056A (ja) | 1983-01-31 | 1983-01-31 | 半導体センサおよびその製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59141056A (cg-RX-API-DMAC7.html) |
-
1983
- 1983-01-31 JP JP58014449A patent/JPS59141056A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS59141056A (ja) | 1984-08-13 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4505799A (en) | ISFET sensor and method of manufacture | |
| US4354308A (en) | Method for manufacture of a selective chemical sensitive FET transducer | |
| US6628501B2 (en) | Capacitive moisture sensor | |
| US20050156584A1 (en) | Ion sensitive field effect transistor (ISFET) sensor with improved gate configuration | |
| US4791465A (en) | Field effect transistor type semiconductor sensor and method of manufacturing the same | |
| US6387724B1 (en) | Method of fabricating silicon-on-insulator sensor having silicon oxide sensing surface | |
| JPH0374947B2 (cg-RX-API-DMAC7.html) | ||
| CN107064255A (zh) | 一种基于CMOS工艺的复合电极式pH传感器及其制备方法 | |
| EP0149330B1 (en) | Isfet sensor and method of manufacture | |
| JPH0339584B2 (cg-RX-API-DMAC7.html) | ||
| CN111307913A (zh) | 一种无参比电极半导体离子传感器及其制备方法 | |
| JP3167022B2 (ja) | ガスセンサ | |
| JPH0426432B2 (cg-RX-API-DMAC7.html) | ||
| JPH0452409B2 (cg-RX-API-DMAC7.html) | ||
| JPH0241581Y2 (cg-RX-API-DMAC7.html) | ||
| JPH0339585B2 (cg-RX-API-DMAC7.html) | ||
| JPS62132160A (ja) | 分離ゲ−ト型ｉｓｆｅｔを用いたバイオセンサ− | |
| JPH0421815B2 (cg-RX-API-DMAC7.html) | ||
| JPS62110145A (ja) | 環境検知装置及びその製造方法 | |
| JPH0584070B2 (cg-RX-API-DMAC7.html) | ||
| JPS60202347A (ja) | 電界効果型半導体センサ | |
| JP2001242131A (ja) | イオンセンサ | |
| JPH0320768Y2 (cg-RX-API-DMAC7.html) | ||
| JPS60158348A (ja) | Ｉｓｆｅｔセンサ | |
| JPH0429974B2 (cg-RX-API-DMAC7.html) |