JPH0338689Y2 - - Google Patents

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Publication number
JPH0338689Y2
JPH0338689Y2 JP1982141523U JP14152382U JPH0338689Y2 JP H0338689 Y2 JPH0338689 Y2 JP H0338689Y2 JP 1982141523 U JP1982141523 U JP 1982141523U JP 14152382 U JP14152382 U JP 14152382U JP H0338689 Y2 JPH0338689 Y2 JP H0338689Y2
Authority
JP
Japan
Prior art keywords
sample
tool
particle beam
analyzer
analysis
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP1982141523U
Other languages
Japanese (ja)
Other versions
JPS5945557U (en
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP14152382U priority Critical patent/JPS5945557U/en
Publication of JPS5945557U publication Critical patent/JPS5945557U/en
Application granted granted Critical
Publication of JPH0338689Y2 publication Critical patent/JPH0338689Y2/ja
Granted legal-status Critical Current

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  • Analysing Materials By The Use Of Radiation (AREA)
  • Electron Tubes For Measurement (AREA)

Description

【考案の詳細な説明】 考案の詳細の説明 本考案はオージエ電子分析装置やSIMS装置等
の試料表面の分析を行なう装置に関するものであ
る。
[Detailed Description of the Invention] Detailed Description of the Invention The present invention relates to an apparatus for analyzing the surface of a sample, such as an Augier electron analyzer or a SIMS apparatus.

オージエ電子分析装置やSIMS(二次イオン質
量分析)装置においては、一次荷電粒子線の照射
により発生する二次電子(オージエ電子)又は二
次イオンをアナライザーに導いてそのエネルギー
分析を行なつているが、前記二次的荷電粒子線は
試料の表極層からのみ発生するものであるので、
これら装置による分析は表面分析となる。而し
て、表面分析装置においては試料表面の汚れは絶
対禁物であり、該汚れの除去並びに試料の深さ方
向の分析を可能にするため試料面の研磨が必要と
なる。この要望のため、従来は試料室内にイオン
銃を設置し、該イオン銃からのイオンシヤワーに
よりエツチングを行なうもの及び砥石を用いての
機械的研磨を行なうものが実用されている。しか
し、前者はエツチングに長時間を費し、又表面組
成によりエツチング深さが異なるため深さ方向の
直線性が著しく悪く、且つエツチングされにくい
組成のみが残るので深さ方向の分析が進むにつれ
分析誤差が増大するという問題を有している。
又、後者は何時間もかけて研磨しなければならな
いので試料準備に手間取り、且つ斜め研磨の場合
その傾斜角を小さくするのには限度があり実用的
でない。
In an Augier electron analyzer or SIMS (secondary ion mass spectrometer), secondary electrons (Auger electrons) or secondary ions generated by irradiation with a primary charged particle beam are guided to an analyzer and their energy analysis is performed. However, since the secondary charged particle beam is generated only from the surface layer of the sample,
Analysis by these devices is surface analysis. Therefore, contamination on the surface of a sample is absolutely prohibited in a surface analysis device, and polishing of the sample surface is required to remove the contamination and to enable analysis in the depth direction of the sample. To meet this demand, conventional methods have been put into practice in which an ion gun is installed in the sample chamber, and etching is performed by ion shower from the ion gun, and mechanical polishing is performed using a grindstone. However, in the former case, etching takes a long time, and since the etching depth varies depending on the surface composition, the linearity in the depth direction is extremely poor.Also, only compositions that are difficult to etch remain, so as the depth direction analysis progresses, the etching process becomes more difficult. This has the problem of increased errors.
In addition, the latter method requires many hours of polishing, which takes time to prepare the sample, and in the case of oblique polishing, there is a limit to how small the inclination angle can be, making it impractical.

而して、本考案は上記欠点を解決することを目
的とするもので、その構成の特徴は被検試料を収
納した試料室、該試料に一次荷電粒子線又は放射
線を照射する手段及び該荷電粒子線等の照射によ
り試料より発生した二次的荷電粒子を分析するア
ナライザーを備えた装置において、切削刃をもつ
た工具を前記試料室内に配置せしめると共に、該
工具と該試料とを相対的に移動させる手段を設
け、該切削刃の形状を、該刃を試料に押圧し、該
工具と試料とを相対的に移動させることによつて
該試料に連続的に深さが変化する面を有する傷が
形成されるような形状とすることを特徴とする試
料の表面分析装置に存する。
The present invention aims to solve the above-mentioned drawbacks, and its configuration is characterized by a sample chamber containing a test sample, a means for irradiating the sample with a primary charged particle beam or radiation, and a means for irradiating the sample with a primary charged particle beam or radiation. In an apparatus equipped with an analyzer that analyzes secondary charged particles generated from a sample by irradiation with a particle beam or the like, a tool with a cutting blade is placed in the sample chamber, and the tool and the sample are placed relative to each other. A means for moving the cutting blade is provided, and the cutting blade has a surface whose depth changes continuously by pressing the blade against the specimen and moving the tool and the specimen relative to each other. The present invention resides in a sample surface analysis device characterized by having a shape that allows scratches to be formed.

以下本考案の一実施例を図面に基づき詳説す
る。
An embodiment of the present invention will be explained in detail below based on the drawings.

第1図は本考案の一実施例の主要部断面図であ
り、1は試料室を示してある。該試料室内には試
料移動機構2が設置されており、試料3はこの上
に置かれている。該試料移動機構は通常X−Y移
動並びに上下移動が可能であり、軸4(X方向の
軸)を介して外部の駆動装置5に接続している。
試料室1の上部には対物レンズ6を含む電子線照
射レンズ系7及び電子銃(図示せず)が積載され
ている。該電子銃から放射された電子線は照射レ
ンズ系により細く絞られ試料3上に照射されると
同時に図示外の電子線偏向器により試料上におい
て一次元的又は二次元的に走査される。又、試料
室には例えばシリンドリカルミラー型の電子線エ
ネルギーアナライザー8が設置されており、前記
電子線の照射により試料から発生するオージエ電
子のエネルギーを分光するようになしてある。該
アナライザーにより分光され、検出されたオージ
エ電子の信号は図示しないが従来から良く知られ
た表示装置又は記録装置に導入されスペクトルと
して表示又は記録される。9は前記試料面を挽き
掻くための工具であり、ホルダー10に取付けら
れている。該ホルダーはシヤフト11の先端に取
付けられた保持体12に回転可能に保持されてい
る。13は工具ホルダーを保持体に固定するため
のネジでありホルダー(工具)の角度を調整した
後該ネジを固定する。前記シヤフト11は球体軸
受14を介して外部に取出されその端部に摘子1
8が固定され、更に該端部付近には調整ネジ15
が係合している。該ネジの反対側にはスプリング
16が係合しており、前記ネジとの共同によりシ
ヤフトの位置を決定できるようになつている。前
記工具は第2図aに示すようにシヤフト11の軸
と直角な方向にかなりな幅をもち、且つ試料面に
対し一定な角度Θをなした切削刃を有している。
この角度Θは前記ホルダーを保持体に取付けると
きの角度により決定され任意に可変される。
FIG. 1 is a sectional view of a main part of an embodiment of the present invention, and 1 indicates a sample chamber. A sample moving mechanism 2 is installed in the sample chamber, and the sample 3 is placed on it. The sample moving mechanism is normally capable of X-Y movement as well as vertical movement, and is connected to an external drive device 5 via a shaft 4 (an axis in the X direction).
An electron beam irradiation lens system 7 including an objective lens 6 and an electron gun (not shown) are mounted in the upper part of the sample chamber 1. The electron beam emitted from the electron gun is narrowed down by an irradiation lens system and irradiated onto the sample 3, and at the same time is scanned one-dimensionally or two-dimensionally over the sample by an electron beam deflector (not shown). Further, in the sample chamber, for example, a cylindrical mirror type electron beam energy analyzer 8 is installed, and is configured to analyze the energy of Auger electrons generated from the sample by irradiation with the electron beam. Although not shown, the Auger electron signal spectrally spectrally and detected by the analyzer is introduced into a conventionally well-known display or recording device and displayed or recorded as a spectrum. Reference numeral 9 denotes a tool for scraping the sample surface, and is attached to the holder 10. The holder is rotatably held by a holder 12 attached to the tip of the shaft 11. Numeral 13 is a screw for fixing the tool holder to the holding body, and the screw is fixed after adjusting the angle of the holder (tool). The shaft 11 is taken out to the outside via a spherical bearing 14, and a knob 1 is attached to the end thereof.
8 is fixed, and an adjustment screw 15 is further provided near the end.
is engaged. A spring 16 is engaged on the opposite side of the screw, and cooperates with the screw to determine the position of the shaft. The tool has a cutting edge having a considerable width in a direction perpendicular to the axis of the shaft 11 and forming a constant angle Θ with respect to the sample surface, as shown in FIG. 2a.
This angle Θ is determined by the angle at which the holder is attached to the holding body and can be arbitrarily varied.

斯かる構成において、前記工具の刃の角度を調
整した後、ネジ15を操作してシヤフトの傾きを
調整し工具を試料3の表面に押し込む(第2図a
の状態)。然る後、摘子18を第1図中紙面に垂
直な方向に移動せしめると、工具9の刃部が試料
に食い込んだままシヤフト11、ホルダー10及
び保持体12が移動するので、その後に第2図b
に示すような挽き掻き傷17が形成される。この
傷の状態は走査電子顕微鏡機能により容易に観察
でき、エツジ部A及びBを確認できる。而して、
挽き掻き方向に直交する方向で点Aから点Bに向
けて、又は逆に照射電子線を走査しオージエ電子
による線分析又はステツプ状の分析を行えば、試
料の深さ方向分析のプロフアイルが得られる。
In such a configuration, after adjusting the angle of the blade of the tool, the screw 15 is operated to adjust the inclination of the shaft and the tool is pushed into the surface of the sample 3 (Fig. 2 a).
condition). After that, when the knob 18 is moved in the direction perpendicular to the plane of the paper in FIG. Figure 2b
Scratches 17 are formed as shown in FIG. The state of this scratch can be easily observed using a scanning electron microscope, and edge portions A and B can be confirmed. Then,
If the irradiation electron beam is scanned from point A to point B in the direction perpendicular to the scratching direction, or vice versa, and line analysis or step-like analysis using Auger electrons is performed, the profile of the depth direction analysis of the sample can be obtained. can get.

第3図及び第4図は前記工具の刃部の形状の変
形であり、第3図aでは該刃部は円形又は任意な
曲率を設けた場合で、bの如き傷が形成される。
又、第4図aは刃部を山形に形成したもので、b
の如く角ばつた谷形の傷が形成される。この様な
形状を用いる場合には試料面と工具の刃部との角
度調整をそれ程厳密におこなう必要がなくなる。
3 and 4 show variations in the shape of the blade portion of the tool. In FIG. 3a, the blade portion is circular or has an arbitrary curvature, and scratches as shown in b are formed.
In addition, Fig. 4a shows the blade part formed in a chevron shape, and b
An angular, valley-shaped scar is formed. When such a shape is used, it is no longer necessary to adjust the angle between the sample surface and the tool blade so precisely.

尚、どのような形状の工具を用いる場合でも前
記摘子18による挽き掻き操作を複数回繰返し行
ない、少しずつ深さの異なる分析を行なうように
すると良い。
Incidentally, no matter what shape of tool is used, it is preferable to repeat the scraping operation with the knob 18 a plurality of times to perform analysis at slightly different depths.

以上説明したような構成となせば、極短時間で
試料の組成の影響を受けることなく、連続的に深
さが変化する面を有する傷を形成することができ
る。従つて、この傷跡にそつて電子線を走査すれ
ば、深さに応じた分析を極めて高い精度で行うこ
とができ、従来のイオンエツチングの欠点並びに
機械的研磨の欠点を完全に除去できるものであ
る。更に、イオンエツチングでは表面荒れのため
1μm程度が限度であつたが、本考案では10μmで
も充分可能でありその応用度を高めることができ
る。
With the configuration described above, it is possible to form a scratch having a surface whose depth continuously changes in a very short time without being affected by the composition of the sample. Therefore, by scanning an electron beam along this scar, depth-dependent analysis can be performed with extremely high precision, and the drawbacks of conventional ion etching and mechanical polishing can be completely eliminated. be. Furthermore, due to surface roughness in ion etching,
The limit was about 1 μm, but in the present invention, even 10 μm is sufficient and the degree of application can be increased.

尚、以上は本考案の一例であり実施に際しては
種々の変更が可能である。例えば工具を移動させ
る手段は図示のものに限定されるものではなく、
又工具を移動する代りに試料を移動するようにし
ても良い。更に、上記はオージエ電子分析装置を
例にしたが、他の表面分析装置、例えばSIMSや
エスカ等にも同様に適用できるものである。
Note that the above is an example of the present invention, and various changes can be made when implementing the invention. For example, the means for moving the tool is not limited to what is illustrated,
Alternatively, the sample may be moved instead of moving the tool. Further, although the above description uses an Auger electron analyzer as an example, it can be similarly applied to other surface analyzers such as SIMS and ESCA.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は本考案の一実施例を示す主要部の断面
図、第2図乃至第4図は第1図において使用する
工具の形状例を示す図である。 1:試料室、2:移動機構、3:試料、4:
軸、5:駆動装置、6:対物レンズ、7:照射レ
ンズ系、8:エネルギーアナライザー、9:工
具、10:ホルダー、11:シヤフト、12:保
持体、13:ネジ、14:球体軸受、15:ネ
ジ、16:スプリング、18:摘子。
FIG. 1 is a cross-sectional view of the main parts of an embodiment of the present invention, and FIGS. 2 to 4 are diagrams showing examples of the shape of the tool used in FIG. 1. 1: Sample chamber, 2: Movement mechanism, 3: Sample, 4:
Axis, 5: Drive device, 6: Objective lens, 7: Irradiation lens system, 8: Energy analyzer, 9: Tool, 10: Holder, 11: Shaft, 12: Holder, 13: Screw, 14: Spherical bearing, 15 : screw, 16: spring, 18: knob.

Claims (1)

【実用新案登録請求の範囲】[Scope of utility model registration request] 被検試料を収納した試料室、該試料に一次荷電
粒子線又は放射線を照射する手段及び該荷電粒子
線等の照射により試料より発生した二次的荷電粒
子を分析するアナライザーを備えた装置におい
て、切削刃をもつた工具を前記試料室内に配置せ
しめると共に、該工具と該試料とを相対的に移動
させる手段を設け、該切削刃の形状を、該刃を試
料に押圧し、該工具と試料とを相対的に移動させ
ることによつて該試料に連続的に深さが変化する
面を有する傷が形成されるような形状とすること
を特徴とする試料の表面分析装置。
In an apparatus equipped with a sample chamber containing a test sample, a means for irradiating the sample with a primary charged particle beam or radiation, and an analyzer for analyzing secondary charged particles generated from the sample by irradiation with the charged particle beam, etc. A tool having a cutting blade is disposed in the sample chamber, and a means for moving the tool and the sample relative to each other is provided, and the shape of the cutting blade is changed by pressing the blade against the sample. 1. An apparatus for analyzing the surface of a sample, characterized in that the surface of the sample is shaped such that a scratch having a surface whose depth continuously changes is formed on the sample by relatively moving the sample.
JP14152382U 1982-09-18 1982-09-18 Sample surface analysis device Granted JPS5945557U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14152382U JPS5945557U (en) 1982-09-18 1982-09-18 Sample surface analysis device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14152382U JPS5945557U (en) 1982-09-18 1982-09-18 Sample surface analysis device

Publications (2)

Publication Number Publication Date
JPS5945557U JPS5945557U (en) 1984-03-26
JPH0338689Y2 true JPH0338689Y2 (en) 1991-08-15

Family

ID=30316507

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14152382U Granted JPS5945557U (en) 1982-09-18 1982-09-18 Sample surface analysis device

Country Status (1)

Country Link
JP (1) JPS5945557U (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002310961A (en) * 2001-04-19 2002-10-23 Fujitsu Ltd Depthwise element distribution measuring method

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54145061U (en) * 1978-03-31 1979-10-08

Also Published As

Publication number Publication date
JPS5945557U (en) 1984-03-26

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