JPH0337733B2 - - Google Patents

Info

Publication number
JPH0337733B2
JPH0337733B2 JP57023823A JP2382382A JPH0337733B2 JP H0337733 B2 JPH0337733 B2 JP H0337733B2 JP 57023823 A JP57023823 A JP 57023823A JP 2382382 A JP2382382 A JP 2382382A JP H0337733 B2 JPH0337733 B2 JP H0337733B2
Authority
JP
Japan
Prior art keywords
etching
chamber pressure
pressure
pressure value
end point
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP57023823A
Other languages
English (en)
Japanese (ja)
Other versions
JPS58140127A (ja
Inventor
Hitoshi Kudo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP57023823A priority Critical patent/JPS58140127A/ja
Publication of JPS58140127A publication Critical patent/JPS58140127A/ja
Publication of JPH0337733B2 publication Critical patent/JPH0337733B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
JP57023823A 1982-02-16 1982-02-16 ドライエツチング方法 Granted JPS58140127A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57023823A JPS58140127A (ja) 1982-02-16 1982-02-16 ドライエツチング方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57023823A JPS58140127A (ja) 1982-02-16 1982-02-16 ドライエツチング方法

Publications (2)

Publication Number Publication Date
JPS58140127A JPS58140127A (ja) 1983-08-19
JPH0337733B2 true JPH0337733B2 (enExample) 1991-06-06

Family

ID=12121073

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57023823A Granted JPS58140127A (ja) 1982-02-16 1982-02-16 ドライエツチング方法

Country Status (1)

Country Link
JP (1) JPS58140127A (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0722151B2 (ja) * 1984-05-23 1995-03-08 株式会社日立製作所 エツチングモニタ−方法
JP2892980B2 (ja) * 1995-12-18 1999-05-17 株式会社日立製作所 ドライプロセス処理方法

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56116532A (en) * 1980-02-15 1981-09-12 Stanley Electric Co Ltd Room-lamp controlling apparatus for cars

Also Published As

Publication number Publication date
JPS58140127A (ja) 1983-08-19

Similar Documents

Publication Publication Date Title
EP0151947B1 (en) Method of plasma etching
KR920010726B1 (ko) 반도체 제조장치의 크리닝 종점 판정방법
US5413940A (en) Process of treating SOG layer using end-point detector for outgassing
EP0841682A2 (en) Method of detecting end point of plasma processing and apparatus for the same
US4936967A (en) Method of detecting an end point of plasma treatment
US4528438A (en) End point control in plasma etching
JPH0337733B2 (enExample)
JPS58130529A (ja) 半導体のエツチング方法
JPH0773105B2 (ja) プラズマ処理装置
JP3015540B2 (ja) 半導体装置の製造方法
JPH0217634B2 (enExample)
JPH0312453B2 (enExample)
JPH0114698B2 (enExample)
JPS58140126A (ja) ドライエツチング方法
JPH0468772B2 (enExample)
JPH0343772B2 (enExample)
JPH0922900A (ja) プラズマ処理方法
US7029593B2 (en) Method for controlling CD during an etch process
JP2000124198A (ja) プラズマエッチング装置及びプラズマエッチング方法
JPH05102087A (ja) プラズマエツチング終点モニタリング方法
JP3181388B2 (ja) 観測信号の変動周期算出方法及びそれを用いたプラズマ装置
JPH1197420A (ja) エッチング装置
JP2002246369A (ja) 薄膜ドライエッチング方法
JPH0637009A (ja) アッシング装置
JPH09162175A (ja) エッチング時間設定方法及びエッチング装置