JPH0337258A - Production of tray for conveying semiconductor integrated circuit - Google Patents

Production of tray for conveying semiconductor integrated circuit

Info

Publication number
JPH0337258A
JPH0337258A JP1169936A JP16993689A JPH0337258A JP H0337258 A JPH0337258 A JP H0337258A JP 1169936 A JP1169936 A JP 1169936A JP 16993689 A JP16993689 A JP 16993689A JP H0337258 A JPH0337258 A JP H0337258A
Authority
JP
Japan
Prior art keywords
tray
resin
semiconductor integrated
polyphenylene ether
integrated circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1169936A
Other languages
Japanese (ja)
Other versions
JP2801655B2 (en
Inventor
Satoshi Yokoyama
聡 横山
Kenji Nabeta
健司 鍋田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Denka Co Ltd
Original Assignee
Denki Kagaku Kogyo KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Denki Kagaku Kogyo KK filed Critical Denki Kagaku Kogyo KK
Priority to JP1169936A priority Critical patent/JP2801655B2/en
Publication of JPH0337258A publication Critical patent/JPH0337258A/en
Application granted granted Critical
Publication of JP2801655B2 publication Critical patent/JP2801655B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Abstract

PURPOSE:To produce a tray with a good balance among the heat resistance, mechanical strengths, moldability, and electrical properties by injection molding a compsn. obtd. by compounding a specific polyphenylene ether polymer with a carbon black and an ethylene-acrylic ester copolymer. CONSTITUTION:100 pts.wt. polyphenylene ether resin comprising 58-96wt.% polyphenylene ether copolymer and 42-4wt.% polystyrene polymer is compounded with 10-40 pts.wt. carbon black and 5-20 pts.wt. ethylene-acrylic ester copolymer to give a resin compsn., which is injection molded to produce a tray for conveying semiconductor integrated circuits. To obtain a good balance between the impact strength of the tray and the moldability of the compsn., a pref. polystyrene polymer is in a range of from a high impact polystyrene resin contg. 2-7wt.% rubber to a mixture of the high impact polystyrene resin contg. a similar amt. of rubber with a transparent polystyrene resin.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明は、ポリフェニレンエーテル系樹脂、カーボンブ
ラック及びエチレン−アクリル酸エステル共重合体含有
組成物を射出成形し、耐熱性、機械的特性、成形性及び
電気的特性に釦いてバランスのとれた半導体集積回路装
置搬送用トレーの製造法に関する。
Detailed Description of the Invention [Field of Industrial Application] The present invention involves injection molding a composition containing a polyphenylene ether resin, carbon black, and an ethylene-acrylic acid ester copolymer, and improving heat resistance, mechanical properties, and molding properties. The present invention relates to a method for manufacturing a tray for transporting semiconductor integrated circuit devices that has well-balanced physical and electrical properties.

〔従来の技術〕[Conventional technology]

従来から、熱可塑性樹脂に炭素繊維、カーボンブラック
、金属粉末を混入してなる半導電性樹脂を成形して成る
半導体集積回路装置搬送用トレーは、半導体集積回路装
置(ICチップにリード線を取り付は樹脂封止したもの
)の積載搬送時に該装置の静電破壊を防止し得る訓電性
プラスチックトレーとして使用されている。
Conventionally, trays for transporting semiconductor integrated circuit devices, which are made by molding a semiconductive resin made by mixing carbon fiber, carbon black, and metal powder into thermoplastic resin, have been used to transport semiconductor integrated circuit devices (IC chips with lead wires attached to them). It is used as an electrically conductive plastic tray that can prevent electrostatic damage to the device during loading and transportation of the device (the one attached is resin-sealed).

半導体集積回路装置は、プラスチック、セラミックある
いはアルミニウム等から成る回路基板上にハンダ付けに
よシ複数個載置して使用されるケースが多い。ところが
封止用樹脂がエポキシ樹脂、フェノール樹脂等の吸湿性
樹脂であるために、該装置のリードl181を回路基板
上にハンダ付けする際に封止樹脂中に吸湿された水分が
気化膨張して封止樹脂成形体に亀裂を生じ、更にICチ
ップの機能を損なうといったトラブルが、特に表面実装
型の半導体集積回路装置に釦いて起シ易い。
Semiconductor integrated circuit devices are often used by mounting a plurality of semiconductor integrated circuit devices on a circuit board made of plastic, ceramic, aluminum, or the like by soldering. However, since the sealing resin is a hygroscopic resin such as epoxy resin or phenol resin, when the lead l181 of the device is soldered onto the circuit board, moisture absorbed into the sealing resin evaporates and expands. Problems such as cracks occurring in the encapsulating resin molding and further impairing the function of the IC chip are particularly likely to occur in surface-mounted semiconductor integrated circuit devices.

従って、最近では、回路基板上にハンダ付けをする直前
に該装置をオープン中120〜150°Cで数時間から
数十時間乾燥する工程全般けるケースが増えている。
Therefore, in recent years, there has been an increasing number of cases in which a process of drying the device at 120 to 150° C. for several hours to several tens of hours while the device is open is performed immediately before soldering onto the circuit board.

従来の制電性プラスチックトレーは、半導体集積回路装
置全積載、保管、搬送する目的で使用されているが、該
装置の乾燥工程には適さない。何故ならば、制電性プラ
スチックトレーは、安価で成形性の良い熱可塑性樹脂、
例えば、ポリプロピレン、ポリスチレンのような熱変形
温度が100°C以下の樹脂を主成分としているために
、100°C以上では変形が著しく、積載した半導体集
積回路装置のリード線の屈折、破損、溶融樹脂による汚
染を招く欠点がある。従って、半導体集積回路装置の乾
燥工程では、熱変形の少ないアルミニウム等の金J@I
製トレーが使用されている。
Conventional antistatic plastic trays are used for the purpose of fully loading, storing, and transporting semiconductor integrated circuit devices, but are not suitable for the drying process of the devices. This is because antistatic plastic trays are made from thermoplastic resin, which is inexpensive and has good moldability.
For example, since the main component is a resin with a thermal deformation temperature of 100°C or less, such as polypropylene or polystyrene, it deforms significantly at temperatures above 100°C, leading to bending, breakage, and melting of the lead wires of loaded semiconductor integrated circuit devices. It has the disadvantage of causing contamination with resin. Therefore, in the drying process of semiconductor integrated circuit devices, it is necessary to
A manufactured tray is used.

〔発明が解決しようとする課題〕[Problem to be solved by the invention]

しかしながら、アルミニウム等の金属製トレーは、プラ
スチック製トレーに比較してfitが大で1)更にまた
、導電性が極めて良好なため外部から電荷流入の危険が
あり、半導体集積回路装置の積載、保管、搬送工程の使
用には適さない。従って、多くの場合、半導体集積回路
装置を乾燥工程の手前でプラスチック製トレーからアル
ミニウム等の金属製トレーに移し替えてオープン中の乾
燥に供している。しかし、−旦、プラスチック製トレー
に積載した半導体集積回路装置を乾燥工程の手前で金属
製トレーに載せ代える作業は、該装置のリード線の屈折
や破損を誘発する他、工程数を増やし製造原価を高くす
る結果となり、必然的にオープン中の乾燥温度に耐え得
る安価なプラスチック製トレーの要求が高1っている。
However, trays made of metal such as aluminum have a larger fit than trays made of plastic, and 1) Furthermore, because they have extremely good conductivity, there is a risk of charge inflow from the outside, and when loading and storing semiconductor integrated circuit devices, , not suitable for use in conveyance processes. Therefore, in many cases, semiconductor integrated circuit devices are transferred from plastic trays to metal trays such as aluminum prior to the drying process, and are subjected to drying while being opened. However, the work of replacing semiconductor integrated circuit devices loaded on plastic trays with metal trays before the drying process not only causes bending and damage of the lead wires of the devices, but also increases the number of steps and increases manufacturing costs. As a result, the demand for inexpensive plastic trays that can withstand the drying temperatures during opening is increasing.

現状、ポリカーボネート、ポリアミド、ポリイミド、ポ
リブチレンテレフタレート等の高耐熱性樹脂をペースと
し九制電性プラスチック製トレーが開発されつつある。
Currently, antistatic plastic trays are being developed using highly heat-resistant resins such as polycarbonate, polyamide, polyimide, and polybutylene terephthalate.

これらは、充分な耐熱性含有するが、いずれも高温溶融
樹脂に炭素繊維、カーボンブラック、金属粉末等の無機
フィラーを混入した樹脂から成形するため溶融温度、溶
融粘度が高くなり、成形品表面のやけ、フローマーク、
ショートショット等のトラブルを引き起こシ易い。
These products have sufficient heat resistance, but because they are all molded from high-temperature melting resin mixed with inorganic fillers such as carbon fiber, carbon black, and metal powder, the melting temperature and melt viscosity become high, and the surface of the molded product becomes Damn it, Flowmark.
This can easily cause problems such as short shots.

また、これらの樹脂では、高温成形が要求されるので、
ゴム分による補強が困難であシ、成形品に充分な耐衝撃
強度を与えることができない。
In addition, these resins require high temperature molding, so
It is difficult to reinforce with rubber, and it is not possible to provide sufficient impact resistance to the molded product.

一方、ポリプロピレンのような安価で汎用の結晶性樹脂
を使用する例もある。
On the other hand, there are also examples of using inexpensive and general-purpose crystalline resins such as polypropylene.

一般に結晶性樹脂は、無機フィラーを混入することによ
う結晶性が高くなう%また結晶の拘束性も高′1.シ耐
熱性を向上させることができるが、荷重時の熱変形が大
きく、オープン中での積み重ね使用が要求される目的と
するトレーの仕様には適さない。更に、このような樹脂
には、結晶化促進剤として低分子量の有機酸が含筐れて
おυ、これらの樹脂から成形したトレーに半導体集積回
路装置を積載してオープン中で加熱すると、トレーから
溶出あるいは揮発した有機酸が該装置のリード線ヲ腐食
するといったトラブルを引き起こし易い欠点を有してい
る。
In general, the crystallinity of crystalline resins increases by mixing inorganic fillers, and the crystal restraint also increases. Although heat resistance can be improved, the thermal deformation under load is large and it is not suitable for the intended tray specifications that require stacking in an open space. Furthermore, these resins contain low-molecular-weight organic acids as crystallization accelerators, so if a tray molded from these resins is loaded with semiconductor integrated circuit devices and heated in an open environment, the tray will melt. It has the disadvantage that the organic acid eluted or volatilized from the device tends to cause troubles such as corrosion of the lead wires of the device.

本発明者等は、鋭意研究の結果、ポリフェニレンエーテ
ル樹脂とスチレン樹脂をベースに樹脂、カーボンブラッ
ク及びエチレン−アクリル酸エステル共重合体を含有す
る組成物を射出成形した耐熱性、機械的特性、成形性、
電気的特性及び価格においてバランスのとれた半導体集
積回路装置搬送用トレーの製造法を開発し、発明を完成
するに至った。
As a result of intensive research, the present inventors have found that the heat resistance, mechanical properties, and moldability of injection molded compositions based on polyphenylene ether resin and styrene resin, and containing resin, carbon black, and ethylene-acrylic acid ester copolymer, have been determined. sex,
We have developed a method for manufacturing a tray for transporting semiconductor integrated circuit devices that is well-balanced in terms of electrical characteristics and cost, and have completed the invention.

〔課題を解決するための手段〕[Means to solve the problem]

すなわち本発明は (a) yt? +)フェニレンエーテル重合体58〜
96itSとポリスチレン重合体42〜4重量優とから
なるポリフェニレンエーテル系樹脂100重!#音k(
b)カーボンブラック10〜40′Mf部及び(c1−
1−テレンーアクリル酸エステル共重合体5〜20重量
部を含有してなる樹脂組成物を射出成形することを特徴
とする半導体集積回路装置搬送用トレーの製造法である
That is, the present invention (a) yt? +) Phenylene ether polymer 58~
100 weight polyphenylene ether resin consisting of 96itS and 42 to 4 weight polystyrene polymers! #sound k(
b) 10-40'Mf part of carbon black and (c1-
This is a method for manufacturing a tray for transporting semiconductor integrated circuit devices, which comprises injection molding a resin composition containing 5 to 20 parts by weight of a 1-terene-acrylic acid ester copolymer.

本発明で使用するポリフェニレンエーテル系樹脂とは、
米国特許3383435号に記載されてイルポリフェニ
レンエーテル重合体のホモポリマーあるいは共重合体と
ポリスチレン重合体のブレンド系を意味するものである
The polyphenylene ether resin used in the present invention is
It is described in US Pat. No. 3,383,435 and refers to a blend system of a homopolymer or copolymer of a polyphenylene ether polymer and a polystyrene polymer.

ソシてポリフェニレンエーテル系樹脂100重量部にお
けるブレンド組成は、ポリフェニレンエーテル重合体の
ホモポリマーあるいは共重合体が58〜961![19
g、ポリスチレン重合体が42〜4重量多である。ポリ
フェニレンエーテル重合体が58重1#修よシ少ないと
成形性は向上するが、上記半導体集積回路装置をオーブ
ン中で処理するトレーとして使用するには満足する耐熱
性が得られない。筐た、ポリフェニレンエーテル重合体
が96重N%f:越えると耐熱性は向上するが、成形性
が低下して上記トレーとしての成形が困難になる。耐熱
性と成形性のバランスを考えると、ポリフェニレンエー
テル重合体が58〜96重I#優が好ましい。更に、こ
こでいうポリスチレン重合体の内容としては、トレーと
して使用する際の耐衝撃の補強効果と成形性のバランス
を考えてゴムを2〜7重量肇含有する耐衝撃性スチレン
樹脂又は同様のゴム量を含有する耐衝撃性スチレン樹脂
と透明スチレン樹脂との混合物の範囲が最適である。
The blend composition of 100 parts by weight of polyphenylene ether resin is 58 to 961 parts of homopolymer or copolymer of polyphenylene ether polymer! [19
g, polystyrene polymer is 42-4% by weight. If the polyphenylene ether polymer has less 58x1# repair, moldability will be improved, but sufficient heat resistance will not be obtained for use as a tray for processing the semiconductor integrated circuit device in an oven. If the polyphenylene ether polymer exceeds 96% F by weight, the heat resistance will improve, but the moldability will decrease, making it difficult to mold the tray. Considering the balance between heat resistance and moldability, it is preferable that the polyphenylene ether polymer has a weight of 58 to 96 I#. Furthermore, the content of the polystyrene polymer mentioned here is an impact-resistant styrene resin containing 2 to 7 parts by weight of rubber or similar rubber, considering the balance between impact-reinforcing effect and moldability when used as a tray. A range of mixtures of high impact styrenic resins and clear styrenic resins containing amounts is optimal.

次に本発明で使用するカーボンブラックとは、顆粒状又
は粉末状の導電性のカーボンブラックであシ、例えば、
ナーマルブラック、アセチレンブラック、ファーネスブ
ラック等がある。組成物中の割合は、ポリフェニレンエ
ーテル系樹脂100重量部に対して、カーボンブラフ2
10〜40M倉部              が好ま
しい。
Next, the carbon black used in the present invention is granular or powdered conductive carbon black, for example,
There are natural black, acetylene black, furnace black, etc. The proportion of carbon bluff 2 in the composition is based on 100 parts by weight of polyphenylene ether resin.
10-40M Kurabe is preferable.

カーボンブラックの添加量が10重音部よシ少ないと上
記トレーの使用r満足する導電性を発現できない。筐た
、カーボンブラックの添加量が40重量部を越えると樹
脂の流動性が著しく低下して上記トレーを成形すること
が困難となる。一般に比表面積の小さなカーボンブラッ
クはど多量の添加を必要とするが、導電性と成形性のバ
ランスおよび作業性から考えて顆粒状のファーネスブラ
ックが好筐しく、その場合、ポリフェニレンエーテル系
樹脂100重量部に対して、カーボンブラック10〜4
0重量部を添加するとよい。
If the amount of carbon black added is less than 10 parts, the above-mentioned tray cannot exhibit satisfactory conductivity. However, if the amount of carbon black added exceeds 40 parts by weight, the fluidity of the resin decreases significantly, making it difficult to mold the tray. Generally, carbon black with a small specific surface area requires a large amount to be added, but granular furnace black is preferable from the balance of conductivity and moldability and workability. 10 to 4 parts of carbon black
It is preferable to add 0 parts by weight.

本発明では、成形性および耐衝撃性を改良するために、
エチレン−アクリル酸エステル共重合体を使用する。ポ
リスチレン、ポリプロピレン樹脂等汎用樹脂の補強には
、不飽和系のゴムを使用するが、本発明のトレーに使用
する樹脂は、高温高圧下で加工されるため、不飽和系の
ゴムを使用するとゴム分の熱分解が著しく使用できない
In the present invention, in order to improve moldability and impact resistance,
An ethylene-acrylic acid ester copolymer is used. Unsaturated rubber is used to reinforce general-purpose resins such as polystyrene and polypropylene resin, but since the resin used in the tray of the present invention is processed under high temperature and pressure, using unsaturated rubber will cause the rubber to deteriorate. Thermal decomposition of minutes significantly makes it unusable.

エチレン−アクリル酸エステル共重合体としては、エチ
レン−エチルアクリレート共重合体が成形性トよび耐衝
撃性の改良効果が最も大きい。ポリフェニレンエーテル
重合体とポリスチレン重合体のブレンド系にエチレン−
エテルアクリレート共重合体を添加して成形性と耐衝撃
性を改良することは、特公昭53−12539号公報に
記述されている。
Among the ethylene-acrylic acid ester copolymers, ethylene-ethyl acrylate copolymers have the greatest effect on improving moldability and impact resistance. Ethylene is added to the blend system of polyphenylene ether polymer and polystyrene polymer.
The addition of an ether acrylate copolymer to improve moldability and impact resistance is described in Japanese Patent Publication No. 53-12539.

本発明で使用するエチレン−エテルアクリレート共重合
体は、補強効果と熱安定性のバランスを考えて、エチル
アクリレートの含有量か5〜20重量嘩の範囲にあるこ
とが最適である。また、エチレン−アクリル酸エステル
共重合体の添加量は、ポリフェニレンエーテル系樹脂1
00重1“部に対して5〜20重量部が最適である。エ
チレン−アクリル酸エステル共重合体が5重口部よシ少
ないと、上記トレーの成形性と耐衝撃性の改良効果が得
られない。また、20重量部よシ多いと、成形性は改良
されるが耐衝撃性が再び低下するだけでなく、耐熱性が
著しく低下して、上記トレーの仕様を満足しない。した
がって成形性、耐衝撃性シよび耐熱性のバランスを考え
て、ポリフェニレンエーテル系樹脂100重量部に対し
てエチレンエチルアクリレート共重合体5〜2Omf部
の添加が好iしい。
The ethylene-ethel acrylate copolymer used in the present invention preferably has an ethyl acrylate content of 5 to 20% by weight, considering the balance between reinforcing effect and thermal stability. In addition, the amount of ethylene-acrylic acid ester copolymer added is 1/1 of polyphenylene ether resin.
The optimal amount is 5 to 20 parts by weight per 1 part by weight of ethylene-acrylic ester copolymer.If the amount of the ethylene-acrylic ester copolymer is less than 5 parts by weight, the moldability and impact resistance of the tray can be improved. Moreover, if the amount is more than 20 parts by weight, the moldability is improved, but not only the impact resistance decreases again, but also the heat resistance decreases significantly, which does not satisfy the above specifications of the tray.Therefore, the moldability Considering the balance between impact resistance and heat resistance, it is preferable to add 5 to 2 Omf parts of the ethylene ethyl acrylate copolymer to 100 parts by weight of the polyphenylene ether resin.

更に、本発明では、各種の添加剤、例えば抗酸化剤、可
塑剤、滑剤、難燃剤を添加してもよい。
Furthermore, in the present invention, various additives such as antioxidants, plasticizers, lubricants, and flame retardants may be added.

以下に本発明の実施方法を説明する。筐ず、上述の各種
原料を良く知られている混合機、例えばヘンシェルミキ
サー リボンブレンダー タンプ2−ミキサー等で混合
、攪拌する。次に混合物をやはシ良く知られている混線
機、例えば同方向二軸押し出し機、異方向二軸押し出し
機や加圧ニーダ−等により、250〜320℃で混練し
て、ベレット状とする。
A method of implementing the present invention will be explained below. The above-mentioned various raw materials are then mixed and stirred using a well-known mixer, such as a Henschel mixer, ribbon blender, tamp 2-mixer, or the like. Next, the mixture is kneaded at 250 to 320°C using a well-known mixing machine, such as a twin-screw extruder in the same direction, a twin-screw extruder in different directions, or a pressure kneader, to form a pellet. .

次に、以上の要領でベレット化した半導電性樹脂から半
導体集積回路装置搬送用トレーを射出成形法により作成
する。
Next, a tray for transporting a semiconductor integrated circuit device is made by injection molding from the semiconductive resin pelletized in the above manner.

射出成形条件は、例えば型締圧160トンの油圧式射出
成形機を用いて、成形温度280〜340°C5金型轟
度80〜140℃である。
The injection molding conditions are, for example, using a hydraulic injection molding machine with a mold clamping pressure of 160 tons, a molding temperature of 280 to 340°C, and a mold roar of 80 to 140°C.

トレーの形状は、通常、縦100〜150 mms横2
50〜300關、厚さ5〜7 mm程度であり、縦横直
行する格子で仕切られてb5、該格子−つ当たりに一つ
の半導体集積回路装置が積載されるようになっている。
The shape of the tray is usually 100 to 150 mm in length and 2 in width.
It is approximately 50 to 300 mm wide and 5 to 7 mm thick, and is partitioned by vertical and horizontal grids so that one semiconductor integrated circuit device can be loaded per grid.

格子で仕切られた一区画の大きさは、積載する半導体集
積回路装置の大きさによって様々であるが、QFP型I
型用C用トレー合は、−辺10〜40B8度である。ま
た、格子で仕切られた区画内には、半導体集積回路装置
突き出し用の穴が開いて>b、紋穴と該格子の間には紋
穴を囲むように幅0.2〜0.5mm、高さ0.2〜1
、OB程度の微小リプが形成されて、積載した半導体集
積回路装置が該微小リプで載置固定され、リード線がト
レーに触れないように配慮されている(第1図)。tf
c、、トレーの裏側には、該格子で仕切られた各区画を
連結するように流動補助用のリプを縦横に設けるとよい
(第2図)。
The size of a section divided by a grid varies depending on the size of the semiconductor integrated circuit device to be loaded, but QFP type I
The mold C tray fit is -side 10 to 40B8 degrees. In addition, a hole for ejecting the semiconductor integrated circuit device is formed in the compartment partitioned by the grid, and a width of 0.2 to 0.5 mm is provided between the hole and the grid so as to surround the hole. Height 0.2~1
, OB-sized micro-lips are formed, and the loaded semiconductor integrated circuit devices are mounted and fixed by the micro-lips, and care is taken to prevent the lead wires from touching the tray (FIG. 1). tf
c. On the back side of the tray, lips for assisting flow may be provided vertically and horizontally so as to connect the sections partitioned by the lattice (Fig. 2).

〔実施例〕〔Example〕

以下、本発明を実施例に基づいて説明する。 Hereinafter, the present invention will be explained based on examples.

実施例1〜6、比較例1〜4 ■配合;表1、表2に示す組成にて配合を行なった。Examples 1-6, Comparative Examples 1-4 (2) Compounding: The compositions shown in Tables 1 and 2 were used.

■混合;表1、表2の配合組成のうち、カーボンブラッ
クを除いた原料粉末をへンシエルミキサーで2分間混合
した。その後、カーボンブラックを含めた全成分をタン
ブラ−ミキサーで6分間混合した。
(2) Mixing: The raw material powders from the formulations shown in Tables 1 and 2, excluding carbon black, were mixed for 2 minutes using a Henschel mixer. Thereafter, all components including carbon black were mixed in a tumbler mixer for 6 minutes.

■混線、ペレット化;混合した原料粉末を同方向2軸押
出機(池貝鉄鋼(株)・PCM −45)を使用して、
シリンダー温度280℃、シリンダ2回転数14 Or
pmの条件で混線、ペレット化した。
■ Mixing and pelletizing: Using a co-directional twin-screw extruder (Ikegai Steel Co., Ltd., PCM-45), mix the raw material powder.
Cylinder temperature 280℃, cylinder 2 rotation speed 14 Or
The mixture was cross-wired and pelletized under pm conditions.

■射出成形;射出成形法によう、作成したペレットから
物性評価用試験片と QFP型ICトレーを成形した。
(2) Injection molding: Test pieces for physical property evaluation and QFP type IC trays were molded from the prepared pellets using the injection molding method.

QFP型IC)レーの成形条件例を表3に記した。Table 3 shows examples of molding conditions for QFP type IC).

■表4に一般物性評価結果を、 表5に耐熱試験績 果を記した。■Table 4 shows the general physical property evaluation results. Table 5 shows heat resistance test results. I wrote down the results.

表面抵抗測定方法 試験片二射出成形法によシブレート(12()+sX 
12 ()nX 3n+) を作成した。
Surface resistance measurement method Two test pieces were prepared by injection molding method.
12 ()nX 3n+) was created.

前処理ニブレートの9ケ所に10m間隔で銀塗料t51
111X10mに塗布して室温下で乾燥し、プレート上
に銀電極を作成し た。
Apply silver paint T51 at 10m intervals at 9 locations on the pretreatment nibrate.
It was coated on a 111 x 10 m area and dried at room temperature to create a silver electrode on the plate.

測 定:アドバンテツク社デジタルマルチメータIR−
6853にて銀電極間の抵抗 値を測定した。
Measurement: Advantek digital multimeter IR-
6853, the resistance value between silver electrodes was measured.

抵抗値は、n−9ヶ所/枚の平均値と した。The resistance value is the average value of n-9 locations/sheet. did.

QFP型ICトレーの耐熱試験方法 加熱処理 ■トレー6枚重ねにてオープン中で加熱した。Heat resistance test method for QFP type IC tray Heat treatment ■Heating was done in the open with six trays stacked on top of each other.

125℃、135℃、145°CX24時間■加熱した
トレーを6枚重ねにて室温、放置した; 23″cx5
0%RHx24時間測定方法 ■加熱処理の前後で下記の測定を行った;試料数nwm
 (5枚71条件 ・外形寸法:縦、横寸法を精度1/100nのノギスに
て測定した;4 辺/1枚 反少量を精度1/100mmの ハイドゲージにて測定した; 15点/1枚 ・表面抵抗:トレーの表、裏で10m+間隔の2点間表
面抵抗値を測定し た;12点/1枚片面 ・衝撃強度:トレーの中央を6.55mxX12・71
1IIの大きさに切す出し てアイゾツト衝撃強度を測定 した;1片71枚 〔発明の効果〕 以上説明してきたとbp、特定された樹脂組成物を用い
て射出成形した本発明のトレーは、耐熱性、機械的特性
、成形性、電気的特性シよび価格においてバランスのと
れた特徴を有する半導体集積回路装置搬送用トレーであ
る。
125°C, 135°C, 145°C for 24 hours ■ Six heated trays were stacked and left at room temperature; 23″cx5
0%RHx24 hour measurement method ■The following measurements were performed before and after heat treatment; Number of samples nwm
(5 sheets 71 conditions/external dimensions: Vertical and horizontal dimensions were measured with a caliper with an accuracy of 1/100n; 4 sides/a small amount of each sheet was measured with a hide gauge with an accuracy of 1/100 mm; 15 points/sheet・Surface resistance: The surface resistance value was measured between two points at 10m+ intervals on the front and back of the tray; 12 points/one side ・Impact strength: The center of the tray was measured at 6.55m x 12.71
The trays of the present invention, which are injection molded using the specified resin composition, have a heat-resistant property. The present invention is a tray for transporting semiconductor integrated circuit devices that has well-balanced characteristics in terms of properties, mechanical properties, moldability, electrical properties, and price.

【図面の簡単な説明】[Brief explanation of drawings]

第1図(at、(b)及び(c)は、本発明の試験用に
使用したトレーの表面平面図及び側図面であシ、第2図
は、裏面平面図である。 符号 1・・・格子 4・・・流動補助用リプ2・・・穴  
5・・・流動補助用リプ3・・・微小リプ
Figures 1 (at, (b) and (c) are a top plan view and a side view of the tray used for testing the present invention, and Figure 2 is a back plan view. Reference numeral 1...・Lattice 4...Lip for flow assistance 2...Hole
5... Lip for fluid support 3... Minute lip

Claims (3)

【特許請求の範囲】[Claims] (1)(a)ポリフエニレンエーテル重合体58〜96
重量%とポリスチレン重合体42〜4重量%とからなる
ポリフエニレンエーテル系樹脂100重量部、(b)カ
ーボンブラツク10〜40重量部及び(c)エチレン−
アクリル酸エステル共重合体5〜20重量部を含有して
なる樹脂組成物を射出成形することを特徴とする半導体
集積回路装置搬送用トレーの製造法。
(1) (a) Polyphenylene ether polymer 58-96
100 parts by weight of a polyphenylene ether resin consisting of 42-4% by weight of polystyrene polymer, (b) 10-40 parts by weight of carbon black, and (c) ethylene-
1. A method for producing a tray for transporting semiconductor integrated circuit devices, which comprises injection molding a resin composition containing 5 to 20 parts by weight of an acrylic ester copolymer.
(2)ポリスチレン重合体がゴムを2〜7重量%含有す
る耐衝撃性スチレン樹脂又は耐衝撃性スチレン樹脂と透
明スチレン樹脂との混合物である請求項1記載のトレー
の製造法。
(2) The method for producing a tray according to claim 1, wherein the polystyrene polymer is an impact-resistant styrene resin containing 2 to 7% by weight of rubber or a mixture of an impact-resistant styrene resin and a transparent styrene resin.
(3)カーボンブラツクが顆粒状である請求項1記載の
トレーの製造法。
(3) The method for producing a tray according to claim 1, wherein the carbon black is in the form of granules.
JP1169936A 1989-07-03 1989-07-03 Method of manufacturing tray for transporting semiconductor integrated circuit device Expired - Fee Related JP2801655B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1169936A JP2801655B2 (en) 1989-07-03 1989-07-03 Method of manufacturing tray for transporting semiconductor integrated circuit device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1169936A JP2801655B2 (en) 1989-07-03 1989-07-03 Method of manufacturing tray for transporting semiconductor integrated circuit device

Publications (2)

Publication Number Publication Date
JPH0337258A true JPH0337258A (en) 1991-02-18
JP2801655B2 JP2801655B2 (en) 1998-09-21

Family

ID=15895662

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1169936A Expired - Fee Related JP2801655B2 (en) 1989-07-03 1989-07-03 Method of manufacturing tray for transporting semiconductor integrated circuit device

Country Status (1)

Country Link
JP (1) JP2801655B2 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7455896B2 (en) 2001-05-28 2008-11-25 Denki Kagaku Kogyo Kabushiki Kaisha Electronic component container
KR20190031130A (en) 2017-09-15 2019-03-25 토와 가부시기가이샤 Holding member, manufacturing method of holding member, holding mechanism and manufacturing apparatus of product

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7455896B2 (en) 2001-05-28 2008-11-25 Denki Kagaku Kogyo Kabushiki Kaisha Electronic component container
KR20190031130A (en) 2017-09-15 2019-03-25 토와 가부시기가이샤 Holding member, manufacturing method of holding member, holding mechanism and manufacturing apparatus of product

Also Published As

Publication number Publication date
JP2801655B2 (en) 1998-09-21

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