JPH0334666B2 - - Google Patents
Info
- Publication number
- JPH0334666B2 JPH0334666B2 JP55090873A JP9087380A JPH0334666B2 JP H0334666 B2 JPH0334666 B2 JP H0334666B2 JP 55090873 A JP55090873 A JP 55090873A JP 9087380 A JP9087380 A JP 9087380A JP H0334666 B2 JPH0334666 B2 JP H0334666B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- ohmic
- sub
- photo sensor
- current
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000000463 material Substances 0.000 claims description 19
- 239000004065 semiconductor Substances 0.000 claims description 17
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 8
- 229910052739 hydrogen Inorganic materials 0.000 claims description 8
- 229910052710 silicon Inorganic materials 0.000 claims description 8
- 239000010703 silicon Substances 0.000 claims description 8
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 7
- 239000001257 hydrogen Substances 0.000 claims description 7
- 239000012535 impurity Substances 0.000 claims description 5
- 229910052736 halogen Inorganic materials 0.000 claims description 3
- 150000002367 halogens Chemical class 0.000 claims description 3
- BBBFJLBPOGFECG-VJVYQDLKSA-N calcitonin Chemical compound N([C@H](C(=O)N[C@@H](CC(C)C)C(=O)NCC(=O)N[C@@H](CCCCN)C(=O)N[C@@H](CC(C)C)C(=O)N[C@@H](CO)C(=O)N[C@@H](CCC(N)=O)C(=O)N[C@@H](CCC(O)=O)C(=O)N[C@@H](CC(C)C)C(=O)N[C@@H](CC=1NC=NC=1)C(=O)N[C@@H](CCCCN)C(=O)N[C@@H](CC(C)C)C(=O)N[C@@H](CCC(N)=O)C(=O)N[C@@H]([C@@H](C)O)C(=O)N[C@@H](CC=1C=CC(O)=CC=1)C(=O)N1[C@@H](CCC1)C(=O)N[C@@H](CCCNC(N)=N)C(=O)N[C@@H]([C@@H](C)O)C(=O)N[C@@H](CC(N)=O)C(=O)N[C@@H]([C@@H](C)O)C(=O)NCC(=O)N[C@@H](CO)C(=O)NCC(=O)N[C@@H]([C@@H](C)O)C(=O)N1[C@@H](CCC1)C(N)=O)C(C)C)C(=O)[C@@H]1CSSC[C@H](N)C(=O)N[C@@H](CO)C(=O)N[C@@H](CC(N)=O)C(=O)N[C@@H](CC(C)C)C(=O)N[C@@H](CO)C(=O)N[C@@H]([C@@H](C)O)C(=O)N1 BBBFJLBPOGFECG-VJVYQDLKSA-N 0.000 claims 1
- 239000000758 substrate Substances 0.000 description 13
- 230000003287 optical effect Effects 0.000 description 12
- 230000005684 electric field Effects 0.000 description 11
- 239000007789 gas Substances 0.000 description 11
- 238000000034 method Methods 0.000 description 8
- 238000004519 manufacturing process Methods 0.000 description 5
- 229910021417 amorphous silicon Inorganic materials 0.000 description 4
- 239000000284 extract Substances 0.000 description 4
- 125000005843 halogen group Chemical group 0.000 description 4
- 125000004429 atom Chemical group 0.000 description 3
- 230000015556 catabolic process Effects 0.000 description 3
- 239000011159 matrix material Substances 0.000 description 3
- 229910003902 SiCl 4 Inorganic materials 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 230000031700 light absorption Effects 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- 229910006404 SnO 2 Inorganic materials 0.000 description 1
- 238000005299 abrasion Methods 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 230000010365 information processing Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 108091008695 photoreceptors Proteins 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 150000003377 silicon compounds Chemical class 0.000 description 1
- 238000001894 space-charge-limited current method Methods 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14665—Imagers using a photoconductor layer
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Light Receiving Elements (AREA)
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
- Facsimile Heads (AREA)
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9087380A JPS5715476A (en) | 1980-07-02 | 1980-07-02 | Photosensor |
| GB8120278A GB2080025B (en) | 1980-07-02 | 1981-07-01 | Semiconductor photosensor device |
| AU72458/81A AU548158B2 (en) | 1980-07-02 | 1981-07-01 | Photosensor |
| DE19813125976 DE3125976A1 (de) | 1980-07-02 | 1981-07-01 | Photosensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9087380A JPS5715476A (en) | 1980-07-02 | 1980-07-02 | Photosensor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5715476A JPS5715476A (en) | 1982-01-26 |
| JPH0334666B2 true JPH0334666B2 (fr) | 1991-05-23 |
Family
ID=14010612
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP9087380A Granted JPS5715476A (en) | 1980-07-02 | 1980-07-02 | Photosensor |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JPS5715476A (fr) |
| AU (1) | AU548158B2 (fr) |
| DE (1) | DE3125976A1 (fr) |
| GB (1) | GB2080025B (fr) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3650362T2 (de) * | 1986-01-06 | 1996-01-25 | Semiconductor Energy Lab | Photoelektrische Umwandlungsvorrichtung mit hoher Ansprechgeschwindigkeit und Herstellungsverfahren. |
| DE3650363T2 (de) * | 1986-01-06 | 1996-01-25 | Semiconductor Energy Lab | Photoelektrische Umwandlungsvorrichtung und ihr Herstellungsverfahren. |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3748546A (en) * | 1969-05-12 | 1973-07-24 | Signetics Corp | Photosensitive device and array |
-
1980
- 1980-07-02 JP JP9087380A patent/JPS5715476A/ja active Granted
-
1981
- 1981-07-01 AU AU72458/81A patent/AU548158B2/en not_active Expired
- 1981-07-01 GB GB8120278A patent/GB2080025B/en not_active Expired
- 1981-07-01 DE DE19813125976 patent/DE3125976A1/de active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| AU7245881A (en) | 1982-01-07 |
| DE3125976C2 (fr) | 1991-01-24 |
| AU548158B2 (en) | 1985-11-28 |
| DE3125976A1 (de) | 1982-02-04 |
| JPS5715476A (en) | 1982-01-26 |
| GB2080025A (en) | 1982-01-27 |
| GB2080025B (en) | 1985-01-09 |
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