JPH0334339A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPH0334339A
JPH0334339A JP1169505A JP16950589A JPH0334339A JP H0334339 A JPH0334339 A JP H0334339A JP 1169505 A JP1169505 A JP 1169505A JP 16950589 A JP16950589 A JP 16950589A JP H0334339 A JPH0334339 A JP H0334339A
Authority
JP
Japan
Prior art keywords
layer
film
thin film
metal wire
bonding
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1169505A
Other languages
Japanese (ja)
Inventor
Satoshi Gomi
五味　聡
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP1169505A priority Critical patent/JPH0334339A/en
Publication of JPH0334339A publication Critical patent/JPH0334339A/en
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/02—Bonding areas ; Manufacturing methods related thereto
    • H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L24/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/0212—Auxiliary members for bonding areas, e.g. spacers
    • H01L2224/02122—Auxiliary members for bonding areas, e.g. spacers being formed on the semiconductor or solid-state body
    • H01L2224/02163—Auxiliary members for bonding areas, e.g. spacers being formed on the semiconductor or solid-state body on the bonding area
    • H01L2224/02165—Reinforcing structures
    • H01L2224/02166—Collar structures
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    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/04042—Bonding areas specifically adapted for wire connectors, e.g. wirebond pads
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    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
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    • H01L2224/05001—Internal layers
    • H01L2224/05073—Single internal layer
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    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
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    • H01L2224/0554—External layer
    • H01L2224/05599—Material
    • H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/05617—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/05624—Aluminium [Al] as principal constituent
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
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    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
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    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
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    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H01L2224/7825—Means for applying energy, e.g. heating means
    • H01L2224/783—Means for applying energy, e.g. heating means by means of pressure
    • H01L2224/78313—Wedge
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    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H01L2224/7825—Means for applying energy, e.g. heating means
    • H01L2224/783—Means for applying energy, e.g. heating means by means of pressure
    • H01L2224/78313—Wedge
    • H01L2224/78314—Shape
    • H01L2224/78317—Shape of other portions
    • H01L2224/78318—Shape of other portions inside the capillary
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    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/852—Applying energy for connecting
    • H01L2224/85201—Compression bonding
    • H01L2224/85205—Ultrasonic bonding
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    • H01L2924/01—Chemical elements
    • H01L2924/01013—Aluminum [Al]
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    • H01L2924/01074—Tungsten [W]

Abstract

PURPOSE:To inhibit the plasticity and fluidity of an Al layer at a pad part in an ultrasonic bonding of a fine metal wire and to prevent the generation of an Al layer by a method wherein a thin film, which has a hardness higher than that of the Al layer and has a good bonding property to the Al layer, is provided on the surface of the Al layer. CONSTITUTION:A silicon oxide film 2 is provided on a silicon substrate 1, an Al layer 3 is deposited on the film 2 in a thickness of 1 to 3mum, a thin film; which has a hardness higher than that of the layer 3, has a good bonding property to the layer 3, contains Co, Cr, Ni, W, Cu or Si of 1 to 2%, for example, and consists of Al, WSi or the like; is deposited on the layer 3, this thin film is selectively etched in order and a pad part of a two-layer structure consisting of the layer 3 and the thin film 4 is formed. Then, a protective film 5 is deposited on the surface including the pad part and the film 5 on film 4 is selectively etched to provide an opening part 6. At the time of bonding, a fine metal wire is pressed on the surface of the film 4 and is subjected to ultrasonic vibration. Thereby, the fine metal wire breaks the film 4 and is bonded to the layer 3. Here, the film 4 inhibits the plastic flow of the Al layer due to the ultrasonic vibration to prevent the generation of an Al layer and a good bonding can be realized.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明は半導体装置に関し、特にボンディングパッドを
有する半導体装置に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a semiconductor device, and particularly to a semiconductor device having bonding pads.

〔従来の技術〕[Conventional technology]

従来の半導体装置は、第３図（ａ）、（ｂ）に示すよう
にシリコン基板ｌの上に設けた酸化シリコン膜２の上に
選択的に設けた厚さ１〜３μｍのＡＪ層ｆ″Ａｌ層３を
含む表面に設けた保護膜５と、Ａｌ層３の上の保護膜５
に設けた開孔部６によりボンディングパッドを形成して
おり、ボンディングは開孔部６のＡｌ層３の表面に金属
細線を熱圧着法又は超音波振動による金属間溶接法を用
いて接続していた。A conventional semiconductor device has an AJ layer f'' with a thickness of 1 to 3 μm selectively provided on a silicon oxide film 2 provided on a silicon substrate l, as shown in FIGS. 3(a) and 3(b). A protective film 5 provided on the surface including the Al layer 3, and a protective film 5 on the Al layer 3.
A bonding pad is formed by the opening 6 provided in the opening 6, and the bonding is performed by connecting a thin metal wire to the surface of the Al layer 3 in the opening 6 using thermocompression bonding or metal-to-metal welding using ultrasonic vibration. Ta.

最近ＩＣチップの大電流化、高速化につれ、ボンディン
グパッドのＡｌ層３の厚さが厚くなり、３μｍの厚さを
有するものも出現している。しかし、超音波ウェッジボ
ンディングを用いた場合、Ａｌ層３の厚さが１．５μｍ
以上になると、パッドのＡＩ！層の表面がめくれて剥れ
る現象が発生した。Recently, as the current and speed of IC chips have increased, the thickness of the Al layer 3 of the bonding pad has become thicker, and some have a thickness of 3 μm. However, when using ultrasonic wedge bonding, the thickness of the Al layer 3 is 1.5 μm.
When it comes to the above, the AI of the pad! A phenomenon occurred in which the surface of the layer turned over and peeled off.

第４図（ａ）〜（Ｃ）はボンディングの過程を説明する
ための動作中−順に示した模式的断面図である。FIGS. 4(a) to 4(C) are schematic cross-sectional views sequentially shown during operation to explain the bonding process.

第４国学（ａ　）に示すように、ボングーのウェッジツ
ール７により金属細線８をボンディングパッドのＡｌ層
３０表面に加圧すると共に超音波振動９を印加する。As shown in FIG. 4 (a), a fine metal wire 8 is pressed against the surface of the Al layer 30 of the bonding pad using a Bongu wedge tool 7, and ultrasonic vibrations 9 are applied.

次に、第４図（ｂ）に示すように、初期の段階では、金
属細線８はパッドのＡｌ層３の上をすべっているが、次
第に金属細線３とパッドのＡＩ層名 ３の接割く始まる。接合が開始されると、それにひきつ
づいて、ＡＩ！層３が、塑性流動ｌＯを起こし始める。Next, as shown in FIG. 4(b), at the initial stage, the thin metal wire 8 is sliding on the Al layer 3 of the pad, but gradually the contact between the thin metal wire 3 and the AI layer 3 of the pad begins to slide. It begins. Once the joining begins, the AI! Layer 3 begins to undergo plastic flow lO.

次に、第４図（Ｃ）に示すように、さらに接続が継続さ
れると、塑性流動１０により、パッドのＡｌ層３の表面
が金属細線８と保護膜５の間よりめくれ上り、Ａｊ４１
１を発生する。Next, as shown in FIG. 4(C), when the connection is continued, the surface of the Al layer 3 of the pad is turned up from between the thin metal wire 8 and the protective film 5 due to the plastic flow 10, and Aj41
Generates 1.

〔発明が解決しようとする課題〕[Problem to be solved by the invention]

が狭い場合に隣接パッドの金属細線に接触して短線 縮させる原因となり、又、遊離した場合は、半導鰺 体チップの内部配線間の短糟を生じて半導体装置の信頼
性を低下させるという問題点がある。If the pads are narrow, they may come into contact with the thin metal wires of adjacent pads, causing the wires to shorten, and if they become loose, they can cause short breaks between the internal wiring of the semiconductor chip, reducing the reliability of the semiconductor device. There is a problem.

〔課題を解決するための手段二 本発明の半導体装置は、パッド部の、１層よりも硬度が
高く、尚かつＡｌ層との接合性の良い薄膜を、パッド部
のＡ、　１層の表面に設けている。[Means for Solving the Problems 2] In the semiconductor device of the present invention, a thin film having higher hardness than the first layer of the pad portion and having good bonding properties with the Al layer is used as the surface of the first layer A of the pad portion. It is set up in

〔実施例〕〔Example〕

次に、本発明について図面を参照して説明する。 Next, the present invention will be explained with reference to the drawings.

第１図（ａ＞、（ｂ）は、本発明の第１の実施例の平面
図及びＡ−Ａ’轢断面図である。FIGS. 1(a) and 1(b) are a plan view and a sectional view taken along the line AA' of the first embodiment of the present invention.

第１図（ａ）、（ｂ）に示すように、シリコン基板ｌの
上に酸化シリコン膜２を設け、酸化シリコン膜２の上に
Ａｊ層３を１〜３μｍの厚さに堆Ｃ０やＳｔを１〜２％
含有するＡＡ又はＷＳ＋等の薄膜を０．Ｏ１〜０．１μ
ｍの厚さに堆積し、こド部を含む表面に保護膜５を堆積
して薄膜４の上の保護膜５を選択的にエツチングして開
孔部６を設ける。As shown in FIGS. 1(a) and 1(b), a silicon oxide film 2 is provided on a silicon substrate l, and an Aj layer 3 is deposited on the silicon oxide film 2 to a thickness of 1 to 3 μm. 1-2%
A thin film of AA or WS+ containing 0. O1~0.1μ
A protective film 5 is deposited on the surface including the corners, and the protective film 5 on the thin film 4 is selectively etched to form an opening 6.

ってＡＩ！層３と接合する。That's AI! Bonded with layer 3.

ここで、薄膜４は超音波振動によるＡｌ層の塑ディング
が実現できる。Here, the thin film 4 can realize plasticizing of the Al layer by ultrasonic vibration.

第２図（ａ）、（ｂ）は、本発明の第２の実施例の平面
図及びＢ＝８’線断面図である。FIGS. 2(a) and 2(b) are a plan view and a sectional view taken along the line B=8' of a second embodiment of the present invention.

第２図（ａ）、（ｂ）に示すように、パッドの開孔部６
の内周近傍の１層３の表面にのみ薄膜４を環状に設けて
パッドの中央部の、１層３の表面を露出させた以外は第
１の実施例と同じ構成を有しており、パッド中央部はＡ
ｌ層３が露出しており、金属細線との接続はこの部分に
て直接強固に行われるので、良好な導電性が得られると
いう利点がある。As shown in FIGS. 2(a) and (b), the opening 6 of the pad
It has the same structure as the first embodiment, except that a thin film 4 is annularly provided only on the surface of the first layer 3 near the inner circumference of the pad, and the surface of the first layer 3 in the center of the pad is exposed. The center of the pad is A
Since the L layer 3 is exposed and the connection with the thin metal wire is made directly and firmly at this portion, there is an advantage that good conductivity can be obtained.

〔発明の効果〕〔Effect of the invention〕

以上説明したように本発明は、パッド部の厚いＡｌ層の
上にＡｌより硬度の高い薄膜を設けるこの発生を防ぎ半
導体装置の信頼性を向上させるという効果を有する。As explained above, the present invention has the effect of preventing this occurrence by providing a thin film harder than Al on the thick Al layer of the pad portion and improving the reliability of the semiconductor device.

【図面の簡単な説明】[Brief explanation of drawings]

第１図（ａ）ｉｂ）は本発明の第１の実施例の平面図及
びＡ−Ａ’線断面図、第２図（ａ）。 （ｂ）は本発明の第２の実施例の平面図及びＢ−Ｂ′線
断面図、第３図（ａ）、（ｂ）は従来の半導体装置の平
面図及びｃ−ｃ’線断面図、第４図（ａ）〜（Ｃ）はボ
ンディングの過程を説明するための動作手順に示した模
式的断面図である。 １・・・・・・シリコン基板、２・・・・・・酸化シリ
コン膜、３・・・・・・Ａｌ１層、４・・・・・・薄膜
、５・・・・・・保護膜、６・・・・・・開孔部、７・
・・・・・ウェッジツール、８・・・・・・金属細線、
９・・・・・・超音波振動、ｌＯ・・・・・・塑性流動
。FIG. 1(a) ib) is a plan view and a sectional view taken along the line AA' of the first embodiment of the present invention, and FIG. 2(a) is a sectional view taken along the line AA'. (b) is a plan view and a cross-sectional view taken along the line B-B' of the second embodiment of the present invention, and FIGS. 3(a) and (b) are a plan view and a cross-sectional view taken along the line c-c' of a conventional semiconductor device. , and FIGS. 4(a) to 4(c) are schematic cross-sectional views showing the operating procedure for explaining the bonding process. 1...Silicon substrate, 2...Silicon oxide film, 3...Al1 layer, 4...Thin film, 5...Protective film, 6...Opening part, 7.
... Wedge tool, 8 ... Thin metal wire,
9...Ultrasonic vibration, lO...Plastic flow.

Claims (1)

【特許請求の範囲】[Claims] Ａｌ層からなるボンディングパッドを有する半導体装置
において、前記Ａｌ層の表面にＡｌ層よりも硬度が高く
且つＡｌ層と結合性の良い薄膜を設けたことを特徴とす
る半導体装置。1. A semiconductor device having a bonding pad made of an Al layer, characterized in that a thin film having higher hardness than the Al layer and having good bonding properties with the Al layer is provided on the surface of the Al layer.
JP1169505A 1989-06-29 1989-06-29 Semiconductor device Pending JPH0334339A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1169505A JPH0334339A (en) 1989-06-29 1989-06-29 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1169505A JPH0334339A (en) 1989-06-29 1989-06-29 Semiconductor device

Publications (1)

Publication Number Publication Date
JPH0334339A true JPH0334339A (en) 1991-02-14

Family

ID=15887758

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1169505A Pending JPH0334339A (en) 1989-06-29 1989-06-29 Semiconductor device

Country Status (1)

Country Link
JP (1) JPH0334339A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6979139B2 (en) 2003-06-27 2005-12-27 King Jim Co., Ltd. Printing apparatus, printing method, and program therefor

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6979139B2 (en) 2003-06-27 2005-12-27 King Jim Co., Ltd. Printing apparatus, printing method, and program therefor

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