JPH0334155B2 - - Google Patents
Info
- Publication number
- JPH0334155B2 JPH0334155B2 JP60006494A JP649485A JPH0334155B2 JP H0334155 B2 JPH0334155 B2 JP H0334155B2 JP 60006494 A JP60006494 A JP 60006494A JP 649485 A JP649485 A JP 649485A JP H0334155 B2 JPH0334155 B2 JP H0334155B2
- Authority
- JP
- Japan
- Prior art keywords
- line
- voltage
- logic
- memory cell
- josephson
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 210000004027 cell Anatomy 0.000 description 39
- 230000008859 change Effects 0.000 description 8
- 230000003068 static effect Effects 0.000 description 8
- 210000000352 storage cell Anatomy 0.000 description 7
- 230000007704 transition Effects 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 3
- 238000001514 detection method Methods 0.000 description 2
- 230000010365 information processing Effects 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 238000004804 winding Methods 0.000 description 2
- 230000009471 action Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 210000003127 knee Anatomy 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 238000010187 selection method Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000008054 signal transmission Effects 0.000 description 1
Landscapes
- Superconductor Devices And Manufacturing Methods Thereof (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60006494A JPS61165888A (ja) | 1985-01-17 | 1985-01-17 | ジョゼフソン記憶セル |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60006494A JPS61165888A (ja) | 1985-01-17 | 1985-01-17 | ジョゼフソン記憶セル |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61165888A JPS61165888A (ja) | 1986-07-26 |
| JPH0334155B2 true JPH0334155B2 (enrdf_load_stackoverflow) | 1991-05-21 |
Family
ID=11640013
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60006494A Granted JPS61165888A (ja) | 1985-01-17 | 1985-01-17 | ジョゼフソン記憶セル |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61165888A (enrdf_load_stackoverflow) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5024993A (en) * | 1990-05-02 | 1991-06-18 | Microelectronics & Computer Technology Corporation | Superconducting-semiconducting circuits, devices and systems |
| US5434530A (en) * | 1990-05-02 | 1995-07-18 | Microelectronics & Computer Technology Corporation | Superconducting semiconducting cross-bar circuit |
-
1985
- 1985-01-17 JP JP60006494A patent/JPS61165888A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS61165888A (ja) | 1986-07-26 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| EP1447810B1 (en) | Magnetic random access memory and reading method thereof | |
| US6341084B2 (en) | Magnetic random access memory circuit | |
| US4365317A (en) | Superconductive latch circuit | |
| CN1146913C (zh) | 具有带磁致电阻存储效应的存储器单元的集成存储器 | |
| EP1736993A1 (en) | Magnetic random access memory array having bit/word lines for shared write select and read operations | |
| US6343032B1 (en) | Non-volatile spin dependent tunnel junction circuit | |
| US20020008987A1 (en) | Magnetic random access memory | |
| KR20010114157A (ko) | 메모리 장치 | |
| EP1612802A2 (en) | Magnetic random access memory element | |
| JPH11306750A (ja) | 磁気型半導体集積記憶装置 | |
| JPH0226886B2 (enrdf_load_stackoverflow) | ||
| US3971004A (en) | Memory cell with decoupled supply voltage while writing | |
| JP2002140889A (ja) | 強磁性体メモリおよびその情報再生方法 | |
| US3032749A (en) | Memory systems | |
| JPH0334155B2 (enrdf_load_stackoverflow) | ||
| US7372723B1 (en) | State save-on-power-down using GMR non-volatile elements | |
| US7372728B2 (en) | Magnetic random access memory array having bit/word lines for shared write select and read operations | |
| US7092285B1 (en) | State save-on-power-down using GMR non-volatile elements | |
| US3086197A (en) | Cryogenic memory system | |
| KR100782944B1 (ko) | 저전력용 자기 메모리소자 | |
| JPH09245480A (ja) | スタティック形半導体メモリ | |
| JP2003123464A (ja) | 磁気メモリ装置 | |
| JP4955232B2 (ja) | 超伝導記憶セル | |
| JPS5829198A (ja) | ジヨセフソン・メモリ回路 | |
| Edwards et al. | High-speed ferrite-core storage system |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |