JPH0332353U - - Google Patents
Info
- Publication number
- JPH0332353U JPH0332353U JP9311289U JP9311289U JPH0332353U JP H0332353 U JPH0332353 U JP H0332353U JP 9311289 U JP9311289 U JP 9311289U JP 9311289 U JP9311289 U JP 9311289U JP H0332353 U JPH0332353 U JP H0332353U
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor wafer
- ion source
- scanner
- supporting
- manufacturing apparatus
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 claims 5
- 150000002500 ions Chemical class 0.000 claims 4
- 238000010884 ion-beam technique Methods 0.000 claims 2
- 238000004519 manufacturing process Methods 0.000 claims 2
- 238000010586 diagram Methods 0.000 description 2
Description
図面はいずも本考案装置に関するもので、第１
図は一実施例の構成模式図、第２図、第３図はそ
れぞれ他の実施例の構成模式図である。
The drawings are all related to the device of the present invention, and the first drawing is related to the device of the present invention.
The figure is a schematic diagram of the configuration of one embodiment, and FIGS. 2 and 3 are schematic diagrams of the configuration of other embodiments.
Claims (1)
を受ける半導体ウエハを支持する手段と、前記イ
オン源と前記支持手段の間に設備されており、前
記支持手段によつて支持された半導体ウエハに対
して前記イオン源からのイオンを走査させるよう
に制御するイオンビーム制御手段を備える半導体
装置の製造装置において、前記イオンビーム制御
手段は、前記イオンビームに一軸方向の偏位を付
与するスキヤナと、該スキヤナにドライブ信号を
付与する信号発生器とを備えており、該信号発生
器は前記ドライブ信号が走査ビームの偏角に起因
する上記半導体ウエハ表面へのビーム密度の変化
を相殺するように生成すべく構成されていること
を特徴とする半導体装置の製造装置。 an ion source, a means for supporting a semiconductor wafer that receives ions emitted from the ion source, and a means for supporting a semiconductor wafer that is provided between the ion source and the support means and is supported by the support means; In the semiconductor device manufacturing apparatus, the ion beam control means includes a scanner that applies a deviation in a uniaxial direction to the ion beam; a signal generator for applying a drive signal to the scanner, the signal generator generating the drive signal so as to offset changes in beam density on the semiconductor wafer surface due to deflection of the scanning beam. 1. A semiconductor device manufacturing apparatus characterized by being configured as follows.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9311289U JPH0332353U (en) | 1989-08-08 | 1989-08-08 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9311289U JPH0332353U (en) | 1989-08-08 | 1989-08-08 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0332353U true JPH0332353U (en) | 1991-03-28 |
Family
ID=31642511
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP9311289U Pending JPH0332353U (en) | 1989-08-08 | 1989-08-08 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0332353U (en) |
-
1989
- 1989-08-08 JP JP9311289U patent/JPH0332353U/ja active Pending
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