JPH033195A - Semiconductor memory - Google Patents

Semiconductor memory

Info

Publication number
JPH033195A
JPH033195A JP1140031A JP14003189A JPH033195A JP H033195 A JPH033195 A JP H033195A JP 1140031 A JP1140031 A JP 1140031A JP 14003189 A JP14003189 A JP 14003189A JP H033195 A JPH033195 A JP H033195A
Authority
JP
Japan
Prior art keywords
data line
reading
writing
time
switch circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1140031A
Other versions
JP2988525B2 (en
Inventor
Toshiaki Kobayashi
Yoshikazu Saito
Tomoki Tanabe
Minoru Tateno
Tetsuya Yamada
Original Assignee
Hitachi Ltd
Hitachi Micro Comput Eng Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd, Hitachi Micro Comput Eng Ltd filed Critical Hitachi Ltd
Priority to JP1140031A priority Critical patent/JP2988525B2/en
Publication of JPH033195A publication Critical patent/JPH033195A/en
Application granted granted Critical
Publication of JP2988525B2 publication Critical patent/JP2988525B2/en
Anticipated expiration legal-status Critical
Application status is Expired - Fee Related legal-status Critical

Links

Abstract

PURPOSE: To increase an access speed at the time of reading and, simultaneously, to prevent a recording data destruction at the time of writing by making the input threshold of a data value selecting switch circuit for writing higher than the input threshold value of a data line selecting switch circuit for reading.
CONSTITUTION: A common data line and a data line selecting switch circuit are provided separately for a common data line CLR for reading, a data line selecting switch circuit 3R for reading and a common data line CLW for writing and a data line selecting switch circuit 3W for writing, and only the input threshold of the switch circuit 3R is increased by the intervention of a high threshold executing circuit 6. Thus, an action threshold at the time of reading and an action threshold at the time of writing are independently set, respectively, and the fear of a stored data destruction at the time of writing can be made small without lowering the access speed at the time of reading.
COPYRIGHT: (C)1991,JPO&Japio
JP1140031A 1989-05-31 1989-05-31 A semiconductor memory device Expired - Fee Related JP2988525B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1140031A JP2988525B2 (en) 1989-05-31 1989-05-31 A semiconductor memory device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1140031A JP2988525B2 (en) 1989-05-31 1989-05-31 A semiconductor memory device

Publications (2)

Publication Number Publication Date
JPH033195A true JPH033195A (en) 1991-01-09
JP2988525B2 JP2988525B2 (en) 1999-12-13

Family

ID=15259349

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1140031A Expired - Fee Related JP2988525B2 (en) 1989-05-31 1989-05-31 A semiconductor memory device

Country Status (1)

Country Link
JP (1) JP2988525B2 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5835417A (en) * 1994-11-22 1998-11-10 Hitachi, Ltd. Semiconductor device
US6091629A (en) * 1996-08-06 2000-07-18 Hitachi, Ltd. High speed semiconductor memory apparatus including circuitry to increase writing and reading speed

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5835417A (en) * 1994-11-22 1998-11-10 Hitachi, Ltd. Semiconductor device
US6111793A (en) * 1994-11-22 2000-08-29 Hitachi, Ltd. Semiconductor device
US6195294B1 (en) * 1994-11-22 2001-02-27 Hitachi, Ltd. Semiconductor device
US6430089B2 (en) 1994-11-22 2002-08-06 Hitachi, Ltd. Semiconductor device
US6091629A (en) * 1996-08-06 2000-07-18 Hitachi, Ltd. High speed semiconductor memory apparatus including circuitry to increase writing and reading speed
US6396732B1 (en) 1996-08-06 2002-05-28 Hitachi, Ltd. Semiconductor memory apparatus, semiconductor apparatus, data processing apparatus and computer system
US6515894B2 (en) 1996-08-06 2003-02-04 Hitachi, Ltd. Semiconductor memory apparatus, semiconductor apparatus, data processing apparatus and computer system
US6665209B2 (en) 1996-08-06 2003-12-16 Renesas Technology Corporation Semiconductor memory apparatus, semiconductor apparatus, data processing apparatus and computer system
US6839268B2 (en) 1996-08-06 2005-01-04 Renesas Technology Corp. Semiconductor memory apparatus, semiconductor apparatus, data processing apparatus and computer system
CN100385572C (en) * 1996-08-06 2008-04-30 株式会社日立制作所 Semiconductor device and semiconductor storage device

Also Published As

Publication number Publication date
JP2988525B2 (en) 1999-12-13

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