JPH0331845A - Positive type photosensitive material - Google Patents
Positive type photosensitive materialInfo
- Publication number
- JPH0331845A JPH0331845A JP1167331A JP16733189A JPH0331845A JP H0331845 A JPH0331845 A JP H0331845A JP 1167331 A JP1167331 A JP 1167331A JP 16733189 A JP16733189 A JP 16733189A JP H0331845 A JPH0331845 A JP H0331845A
- Authority
- JP
- Japan
- Prior art keywords
- parts
- photosensitive material
- butyl ester
- ethylenically unsaturated
- butyl
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000463 material Substances 0.000 title claims abstract description 21
- 229920005989 resin Polymers 0.000 claims abstract description 31
- 239000011347 resin Substances 0.000 claims abstract description 31
- 125000000999 tert-butyl group Chemical group [H]C([H])([H])C(*)(C([H])([H])[H])C([H])([H])[H] 0.000 claims abstract description 16
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 claims abstract description 12
- 229920002554 vinyl polymer Polymers 0.000 claims abstract description 12
- 239000000906 photoactive agent Substances 0.000 claims abstract description 9
- 150000003839 salts Chemical class 0.000 claims abstract description 9
- ISXSCDLOGDJUNJ-UHFFFAOYSA-N tert-butyl prop-2-enoate Chemical compound CC(C)(C)OC(=O)C=C ISXSCDLOGDJUNJ-UHFFFAOYSA-N 0.000 claims description 9
- 239000003504 photosensitizing agent Substances 0.000 claims description 5
- 238000007334 copolymerization reaction Methods 0.000 claims description 4
- 150000001735 carboxylic acids Chemical class 0.000 claims description 3
- 150000001875 compounds Chemical class 0.000 claims description 2
- XMBWDFGMSWQBCA-UHFFFAOYSA-N hydrogen iodide Chemical group I XMBWDFGMSWQBCA-UHFFFAOYSA-N 0.000 claims 1
- 230000001568 sexual effect Effects 0.000 claims 1
- RWSOTUBLDIXVET-UHFFFAOYSA-O sulfonium group Chemical group [SH3+] RWSOTUBLDIXVET-UHFFFAOYSA-O 0.000 claims 1
- -1 alkyl (meth)acrylate Chemical class 0.000 abstract description 5
- NIXOWILDQLNWCW-UHFFFAOYSA-M Acrylate Chemical compound [O-]C(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 abstract description 3
- 230000035945 sensitivity Effects 0.000 abstract description 3
- 125000005410 aryl sulfonium group Chemical group 0.000 abstract description 2
- 238000011161 development Methods 0.000 abstract description 2
- 150000007942 carboxylates Chemical class 0.000 abstract 2
- 125000000217 alkyl group Chemical group 0.000 abstract 1
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 33
- 239000000243 solution Substances 0.000 description 31
- OZAIFHULBGXAKX-UHFFFAOYSA-N 2-(2-cyanopropan-2-yldiazenyl)-2-methylpropanenitrile Chemical compound N#CC(C)(C)N=NC(C)(C)C#N OZAIFHULBGXAKX-UHFFFAOYSA-N 0.000 description 22
- 238000006243 chemical reaction Methods 0.000 description 18
- 229920002120 photoresistant polymer Polymers 0.000 description 15
- 125000004185 ester group Chemical group 0.000 description 11
- 229920000642 polymer Polymers 0.000 description 9
- VVQNEPGJFQJSBK-UHFFFAOYSA-N Methyl methacrylate Chemical compound COC(=O)C(C)=C VVQNEPGJFQJSBK-UHFFFAOYSA-N 0.000 description 8
- 239000003999 initiator Substances 0.000 description 7
- 238000002156 mixing Methods 0.000 description 7
- 239000000203 mixture Substances 0.000 description 7
- 239000000178 monomer Substances 0.000 description 7
- CQEYYJKEWSMYFG-UHFFFAOYSA-N butyl acrylate Chemical compound CCCCOC(=O)C=C CQEYYJKEWSMYFG-UHFFFAOYSA-N 0.000 description 4
- 150000001732 carboxylic acid derivatives Chemical class 0.000 description 4
- 230000007547 defect Effects 0.000 description 4
- 239000005977 Ethylene Substances 0.000 description 3
- 239000003513 alkali Substances 0.000 description 3
- 239000011976 maleic acid Substances 0.000 description 3
- 238000002844 melting Methods 0.000 description 3
- 230000008018 melting Effects 0.000 description 3
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 3
- QVEIBLDXZNGPHR-UHFFFAOYSA-N naphthalene-1,4-dione;diazide Chemical compound [N-]=[N+]=[N-].[N-]=[N+]=[N-].C1=CC=C2C(=O)C=CC(=O)C2=C1 QVEIBLDXZNGPHR-UHFFFAOYSA-N 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- AZQWKYJCGOJGHM-UHFFFAOYSA-N 1,4-benzoquinone Chemical compound O=C1C=CC(=O)C=C1 AZQWKYJCGOJGHM-UHFFFAOYSA-N 0.000 description 2
- NIXOWILDQLNWCW-UHFFFAOYSA-N 2-Propenoic acid Natural products OC(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 2
- WTQZSMDDRMKJRI-UHFFFAOYSA-N 4-diazoniophenolate Chemical compound [O-]C1=CC=C([N+]#N)C=C1 WTQZSMDDRMKJRI-UHFFFAOYSA-N 0.000 description 2
- IMROMDMJAWUWLK-UHFFFAOYSA-N Ethenol Chemical compound OC=C IMROMDMJAWUWLK-UHFFFAOYSA-N 0.000 description 2
- VZCYOOQTPOCHFL-OWOJBTEDSA-N Fumaric acid Chemical compound OC(=O)\C=C\C(O)=O VZCYOOQTPOCHFL-OWOJBTEDSA-N 0.000 description 2
- WOBHKFSMXKNTIM-UHFFFAOYSA-N Hydroxyethyl methacrylate Chemical compound CC(=C)C(=O)OCCO WOBHKFSMXKNTIM-UHFFFAOYSA-N 0.000 description 2
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 2
- OFOBLEOULBTSOW-UHFFFAOYSA-N Propanedioic acid Natural products OC(=O)CC(O)=O OFOBLEOULBTSOW-UHFFFAOYSA-N 0.000 description 2
- FAPWRFPIFSIZLT-UHFFFAOYSA-M Sodium chloride Chemical compound [Na+].[Cl-] FAPWRFPIFSIZLT-UHFFFAOYSA-M 0.000 description 2
- PPBRXRYQALVLMV-UHFFFAOYSA-N Styrene Chemical compound C=CC1=CC=CC=C1 PPBRXRYQALVLMV-UHFFFAOYSA-N 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- MWPLVEDNUUSJAV-UHFFFAOYSA-N anthracene Chemical compound C1=CC=CC2=CC3=CC=CC=C3C=C21 MWPLVEDNUUSJAV-UHFFFAOYSA-N 0.000 description 2
- 125000003118 aryl group Chemical group 0.000 description 2
- 125000001797 benzyl group Chemical group [H]C1=C([H])C([H])=C(C([H])=C1[H])C([H])([H])* 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 150000002148 esters Chemical class 0.000 description 2
- 238000011156 evaluation Methods 0.000 description 2
- XLYMOEINVGRTEX-UHFFFAOYSA-N fumaric acid monoethyl ester Natural products CCOC(=O)C=CC(O)=O XLYMOEINVGRTEX-UHFFFAOYSA-N 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 150000004702 methyl esters Chemical class 0.000 description 2
- 150000002825 nitriles Chemical class 0.000 description 2
- BBEAQIROQSPTKN-UHFFFAOYSA-N pyrene Chemical compound C1=CC=C2C=CC3=CC=CC4=CC=C1C2=C43 BBEAQIROQSPTKN-UHFFFAOYSA-N 0.000 description 2
- DCKVNWZUADLDEH-UHFFFAOYSA-N sec-butyl acetate Chemical compound CCC(C)OC(C)=O DCKVNWZUADLDEH-UHFFFAOYSA-N 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 239000000725 suspension Substances 0.000 description 2
- 238000003786 synthesis reaction Methods 0.000 description 2
- SJMYWORNLPSJQO-UHFFFAOYSA-N tert-butyl 2-methylprop-2-enoate Chemical compound CC(=C)C(=O)OC(C)(C)C SJMYWORNLPSJQO-UHFFFAOYSA-N 0.000 description 2
- VZCYOOQTPOCHFL-UHFFFAOYSA-N trans-butenedioic acid Natural products OC(=O)C=CC(O)=O VZCYOOQTPOCHFL-UHFFFAOYSA-N 0.000 description 2
- KIJJAQMJSXOBIE-UHFFFAOYSA-N (2-methylcyclohexyl) 2-methylprop-2-enoate Chemical compound CC1CCCCC1OC(=O)C(C)=C KIJJAQMJSXOBIE-UHFFFAOYSA-N 0.000 description 1
- XLYMOEINVGRTEX-ONEGZZNKSA-N (e)-4-ethoxy-4-oxobut-2-enoic acid Chemical compound CCOC(=O)\C=C\C(O)=O XLYMOEINVGRTEX-ONEGZZNKSA-N 0.000 description 1
- JZHGRUMIRATHIU-UHFFFAOYSA-N 1-ethenyl-3-methylbenzene Chemical compound CC1=CC=CC(C=C)=C1 JZHGRUMIRATHIU-UHFFFAOYSA-N 0.000 description 1
- WJFKNYWRSNBZNX-UHFFFAOYSA-N 10H-phenothiazine Chemical compound C1=CC=C2NC3=CC=CC=C3SC2=C1 WJFKNYWRSNBZNX-UHFFFAOYSA-N 0.000 description 1
- VUBUXALTYMBEQO-UHFFFAOYSA-N 2,2,3,3,3-pentafluoro-1-phenylpropan-1-one Chemical compound FC(F)(F)C(F)(F)C(=O)C1=CC=CC=C1 VUBUXALTYMBEQO-UHFFFAOYSA-N 0.000 description 1
- SMZOUWXMTYCWNB-UHFFFAOYSA-N 2-(2-methoxy-5-methylphenyl)ethanamine Chemical compound COC1=CC=C(C)C=C1CCN SMZOUWXMTYCWNB-UHFFFAOYSA-N 0.000 description 1
- JAHNSTQSQJOJLO-UHFFFAOYSA-N 2-(3-fluorophenyl)-1h-imidazole Chemical compound FC1=CC=CC(C=2NC=CN=2)=C1 JAHNSTQSQJOJLO-UHFFFAOYSA-N 0.000 description 1
- ZCDADJXRUCOCJE-UHFFFAOYSA-N 2-chlorothioxanthen-9-one Chemical compound C1=CC=C2C(=O)C3=CC(Cl)=CC=C3SC2=C1 ZCDADJXRUCOCJE-UHFFFAOYSA-N 0.000 description 1
- SVONRAPFKPVNKG-UHFFFAOYSA-N 2-ethoxyethyl acetate Chemical compound CCOCCOC(C)=O SVONRAPFKPVNKG-UHFFFAOYSA-N 0.000 description 1
- WDQMWEYDKDCEHT-UHFFFAOYSA-N 2-ethylhexyl 2-methylprop-2-enoate Chemical compound CCCCC(CC)COC(=O)C(C)=C WDQMWEYDKDCEHT-UHFFFAOYSA-N 0.000 description 1
- 125000000954 2-hydroxyethyl group Chemical group [H]C([*])([H])C([H])([H])O[H] 0.000 description 1
- OFNISBHGPNMTMS-UHFFFAOYSA-N 3-methylideneoxolane-2,5-dione Chemical compound C=C1CC(=O)OC1=O OFNISBHGPNMTMS-UHFFFAOYSA-N 0.000 description 1
- RTTAGBVNSDJDTE-UHFFFAOYSA-N 4-ethoxy-2-methylidene-4-oxobutanoic acid Chemical compound CCOC(=O)CC(=C)C(O)=O RTTAGBVNSDJDTE-UHFFFAOYSA-N 0.000 description 1
- HRPVXLWXLXDGHG-UHFFFAOYSA-N Acrylamide Chemical compound NC(=O)C=C HRPVXLWXLXDGHG-UHFFFAOYSA-N 0.000 description 1
- NLHHRLWOUZZQLW-UHFFFAOYSA-N Acrylonitrile Chemical compound C=CC#N NLHHRLWOUZZQLW-UHFFFAOYSA-N 0.000 description 1
- 206010011732 Cyst Diseases 0.000 description 1
- 241000257465 Echinoidea Species 0.000 description 1
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 description 1
- XLYMOEINVGRTEX-ARJAWSKDSA-N Ethyl hydrogen fumarate Chemical compound CCOC(=O)\C=C/C(O)=O XLYMOEINVGRTEX-ARJAWSKDSA-N 0.000 description 1
- CERQOIWHTDAKMF-UHFFFAOYSA-N Methacrylic acid Chemical compound CC(=C)C(O)=O CERQOIWHTDAKMF-UHFFFAOYSA-N 0.000 description 1
- 241000220317 Rosa Species 0.000 description 1
- 206010041235 Snoring Diseases 0.000 description 1
- 241000209140 Triticum Species 0.000 description 1
- 235000021307 Triticum Nutrition 0.000 description 1
- XTXRWKRVRITETP-UHFFFAOYSA-N Vinyl acetate Chemical compound CC(=O)OC=C XTXRWKRVRITETP-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 150000008065 acid anhydrides Chemical class 0.000 description 1
- DPKHZNPWBDQZCN-UHFFFAOYSA-N acridine orange free base Chemical compound C1=CC(N(C)C)=CC2=NC3=CC(N(C)C)=CC=C3C=C21 DPKHZNPWBDQZCN-UHFFFAOYSA-N 0.000 description 1
- 229920006397 acrylic thermoplastic Polymers 0.000 description 1
- 102000011759 adducin Human genes 0.000 description 1
- 108010076723 adducin Proteins 0.000 description 1
- 125000005907 alkyl ester group Chemical group 0.000 description 1
- XYLMUPLGERFSHI-UHFFFAOYSA-N alpha-Methylstyrene Chemical compound CC(=C)C1=CC=CC=C1 XYLMUPLGERFSHI-UHFFFAOYSA-N 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- PYKYMHQGRFAEBM-UHFFFAOYSA-N anthraquinone Natural products CCC(=O)c1c(O)c2C(=O)C3C(C=CC=C3O)C(=O)c2cc1CC(=O)OC PYKYMHQGRFAEBM-UHFFFAOYSA-N 0.000 description 1
- 150000004056 anthraquinones Chemical class 0.000 description 1
- RJGDLRCDCYRQOQ-UHFFFAOYSA-N anthrone Chemical compound C1=CC=C2C(=O)C3=CC=CC=C3CC2=C1 RJGDLRCDCYRQOQ-UHFFFAOYSA-N 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- RWCCWEUUXYIKHB-UHFFFAOYSA-N benzophenone Chemical compound C=1C=CC=CC=1C(=O)C1=CC=CC=C1 RWCCWEUUXYIKHB-UHFFFAOYSA-N 0.000 description 1
- 239000012965 benzophenone Substances 0.000 description 1
- DZBUGLKDJFMEHC-UHFFFAOYSA-N benzoquinolinylidene Natural products C1=CC=CC2=CC3=CC=CC=C3N=C21 DZBUGLKDJFMEHC-UHFFFAOYSA-N 0.000 description 1
- GCTPMLUUWLLESL-UHFFFAOYSA-N benzyl prop-2-enoate Chemical compound C=CC(=O)OCC1=CC=CC=C1 GCTPMLUUWLLESL-UHFFFAOYSA-N 0.000 description 1
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 description 1
- 150000001733 carboxylic acid esters Chemical class 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- HNEGQIOMVPPMNR-IHWYPQMZSA-N citraconic acid Chemical compound OC(=O)C(/C)=C\C(O)=O HNEGQIOMVPPMNR-IHWYPQMZSA-N 0.000 description 1
- 229940018557 citraconic acid Drugs 0.000 description 1
- 238000005352 clarification Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000004132 cross linking Methods 0.000 description 1
- LDHQCZJRKDOVOX-NSCUHMNNSA-N crotonic acid Chemical compound C\C=C\C(O)=O LDHQCZJRKDOVOX-NSCUHMNNSA-N 0.000 description 1
- OIWOHHBRDFKZNC-UHFFFAOYSA-N cyclohexyl 2-methylprop-2-enoate Chemical compound CC(=C)C(=O)OC1CCCCC1 OIWOHHBRDFKZNC-UHFFFAOYSA-N 0.000 description 1
- 125000000113 cyclohexyl group Chemical group [H]C1([H])C([H])([H])C([H])([H])C([H])(*)C([H])([H])C1([H])[H] 0.000 description 1
- 208000031513 cyst Diseases 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 238000012217 deletion Methods 0.000 description 1
- 230000037430 deletion Effects 0.000 description 1
- 150000001990 dicarboxylic acid derivatives Chemical class 0.000 description 1
- 150000001991 dicarboxylic acids Chemical class 0.000 description 1
- ZEFVHSWKYCYFFL-UHFFFAOYSA-N diethyl 2-methylidenebutanedioate Chemical compound CCOC(=O)CC(=C)C(=O)OCC ZEFVHSWKYCYFFL-UHFFFAOYSA-N 0.000 description 1
- IEPRKVQEAMIZSS-AATRIKPKSA-N diethyl fumarate Chemical compound CCOC(=O)\C=C\C(=O)OCC IEPRKVQEAMIZSS-AATRIKPKSA-N 0.000 description 1
- 125000004177 diethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- SUPCQIBBMFXVTL-UHFFFAOYSA-N ethyl 2-methylprop-2-enoate Chemical compound CCOC(=O)C(C)=C SUPCQIBBMFXVTL-UHFFFAOYSA-N 0.000 description 1
- GVEPBJHOBDJJJI-UHFFFAOYSA-N fluoranthrene Natural products C1=CC(C2=CC=CC=C22)=C3C2=CC=CC3=C1 GVEPBJHOBDJJJI-UHFFFAOYSA-N 0.000 description 1
- YLQWCDOCJODRMT-UHFFFAOYSA-N fluoren-9-one Chemical compound C1=CC=C2C(=O)C3=CC=CC=C3C2=C1 YLQWCDOCJODRMT-UHFFFAOYSA-N 0.000 description 1
- 235000011389 fruit/vegetable juice Nutrition 0.000 description 1
- 239000001530 fumaric acid Substances 0.000 description 1
- 239000008240 homogeneous mixture Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- VZCYOOQTPOCHFL-UPHRSURJSA-N maleic acid Chemical compound OC(=O)\C=C/C(O)=O VZCYOOQTPOCHFL-UPHRSURJSA-N 0.000 description 1
- FPYJFEHAWHCUMM-UHFFFAOYSA-N maleic anhydride Chemical compound O=C1OC(=O)C=C1 FPYJFEHAWHCUMM-UHFFFAOYSA-N 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- HNEGQIOMVPPMNR-NSCUHMNNSA-N mesaconic acid Chemical compound OC(=O)C(/C)=C/C(O)=O HNEGQIOMVPPMNR-NSCUHMNNSA-N 0.000 description 1
- FQPSGWSUVKBHSU-UHFFFAOYSA-N methacrylamide Chemical compound CC(=C)C(N)=O FQPSGWSUVKBHSU-UHFFFAOYSA-N 0.000 description 1
- 229920003145 methacrylic acid copolymer Polymers 0.000 description 1
- 229940117841 methacrylic acid copolymer Drugs 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- LVHBHZANLOWSRM-UHFFFAOYSA-N methylenebutanedioic acid Natural products OC(=O)CC(=C)C(O)=O LVHBHZANLOWSRM-UHFFFAOYSA-N 0.000 description 1
- HNEGQIOMVPPMNR-UHFFFAOYSA-N methylfumaric acid Natural products OC(=O)C(C)=CC(O)=O HNEGQIOMVPPMNR-UHFFFAOYSA-N 0.000 description 1
- 239000008267 milk Substances 0.000 description 1
- 210000004080 milk Anatomy 0.000 description 1
- 235000013336 milk Nutrition 0.000 description 1
- REOJLIXKJWXUGB-UHFFFAOYSA-N mofebutazone Chemical group O=C1C(CCCC)C(=O)NN1C1=CC=CC=C1 REOJLIXKJWXUGB-UHFFFAOYSA-N 0.000 description 1
- 150000002763 monocarboxylic acids Chemical class 0.000 description 1
- 229940074369 monoethyl fumarate Drugs 0.000 description 1
- 125000004108 n-butyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- 229920003986 novolac Polymers 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 125000002080 perylenyl group Chemical group C1(=CC=C2C=CC=C3C4=CC=CC5=CC=CC(C1=C23)=C45)* 0.000 description 1
- CSHWQDPOILHKBI-UHFFFAOYSA-N peryrene Natural products C1=CC(C2=CC=CC=3C2=C2C=CC=3)=C3C2=CC=CC3=C1 CSHWQDPOILHKBI-UHFFFAOYSA-N 0.000 description 1
- 229950000688 phenothiazine Drugs 0.000 description 1
- QIWKUEJZZCOPFV-UHFFFAOYSA-N phenyl 2-methylprop-2-enoate Chemical compound CC(=C)C(=O)OC1=CC=CC=C1 QIWKUEJZZCOPFV-UHFFFAOYSA-N 0.000 description 1
- WRAQQYDMVSCOTE-UHFFFAOYSA-N phenyl prop-2-enoate Chemical compound C=CC(=O)OC1=CC=CC=C1 WRAQQYDMVSCOTE-UHFFFAOYSA-N 0.000 description 1
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 1
- 229920001195 polyisoprene Polymers 0.000 description 1
- LYBIZMNPXTXVMV-UHFFFAOYSA-N propan-2-yl prop-2-enoate Chemical compound CC(C)OC(=O)C=C LYBIZMNPXTXVMV-UHFFFAOYSA-N 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000011780 sodium chloride Substances 0.000 description 1
- LDHQCZJRKDOVOX-UHFFFAOYSA-N trans-crotonic acid Natural products CC=CC(O)=O LDHQCZJRKDOVOX-UHFFFAOYSA-N 0.000 description 1
- 238000009281 ultraviolet germicidal irradiation Methods 0.000 description 1
- 230000004304 visual acuity Effects 0.000 description 1
- 239000002023 wood Substances 0.000 description 1
Landscapes
- Polymerisation Methods In General (AREA)
- Inks, Pencil-Leads, Or Crayons (AREA)
- Materials For Photolithography (AREA)
Abstract
Description
【発明の詳細な説明】
座業上の刊用汁野
本発明はポジ型+5友性材f−1に1系り、さらに詳し
くは解lla度か特段に優t′L、印刷板、フォトしジ
スh材料として有用なM規ポジ型感光性せ←1に間する
5力である、
従来技術
近年の電Yまたは電気Fi器に用いられる集積回路の発
達には目覚ましいものがあり、種々の機器に集積回路が
使用されている。こhは集積回路(t=成のためのリソ
グラフィー技術が飛躍的に向上し、44積回路の集積度
が上かった結果、多くの機能を1つのS積回路に持たせ
ることが可能となったためである。[Detailed Description of the Invention] The present invention is based on positive type +5 friendly material f-1, and more specifically, it has a high degree of clarification or particularly excellent t'L, printing plate, photo printing plate, etc. M scale positive photosensitive material useful as a material Integrated circuits are used in This is because the lithography technology for forming integrated circuits (t = t) has improved dramatically, and as a result of the increase in the degree of integration of 44-product circuits, it has become possible to have many functions in one S-product circuit. This is because of this.
集fa回路1F成のため、現在主に環化ポリイソプレン
に光架橋削ビスアジド1ヒき物を添加してなるネガ型フ
ォトレジスI・が使用されている。このタイツ゛のフォ
トレジストは光照射によりビスアジド1ヒ合杓が分解し
てナイトレンが生じ、これが環jヒボリイソルンを架橋
させるため有機溶剤に溶解しにくくなる現象を利用して
いるが、解像度に限界があり、実装2μmの高集積度の
集積回路をIY製するために用いることは困難である。For forming the FA circuit 1F, a negative type photoresist I, which is made of cyclized polyisoprene and added with photo-crosslinking bisazide, is currently used. This tight photoresist takes advantage of the phenomenon that bisazide 1 is decomposed by light irradiation to produce nitrene, which cross-links the ring j-hiboriisolon, making it difficult to dissolve in organic solvents, but there is a limit to resolution. , it is difficult to use it to manufacture a highly integrated circuit with a mounting thickness of 2 μm in IY.
一方、フェノール・ノボラ1り樹脂にキノンジアジド1
ヒ合拘を混合してなるポジ型フォトレジストはアルカリ
水;霧液に可イ容なフェノール・ノボラ・lり(M脂に
アルカリ水溶液不溶のモノンジアジドfヒ合物を添加し
極めてアルカリ水溶液への溶解性を小さくしたものであ
り、このフォトレジストに紫外線を照射すると、キノン
ジアジド1ヒ合物がゲテンを経てカルボン酸となるため
、感光部のアルカリ水溶性への溶解性が著しく高くなっ
て速やかに現1象され、高解像度を実現することができ
るといわれている。このようにポジ型フォトレジストが
ネガ型に比し、高解作性である理由は紫外線照射前後で
親油性から親水性に極めて大きな変(ヒを示すことによ
っている。On the other hand, quinone diazide 1 resin in phenol novola 1 resin
A positive photoresist made by mixing alkali water; When this photoresist is irradiated with ultraviolet rays, the quinone diazide monoarsenic compound passes through getene and becomes carboxylic acid, so the solubility of the photoresist in alkaline water becomes extremely high and the photoresist quickly dissolves. It is said that it is possible to achieve high resolution with this photoresist.The reason why positive-type photoresists have higher resolvability than negative-type photoresists is that they change from lipophilic to hydrophilic before and after UV irradiation. By indicating an extremely large change (hi).
しかし、フェノール・ノボラック樹脂は柱頭によってか
なり融点が異なるが、概して高融点を示す。高融点であ
ることは、これを素材としたフォトレジスト膜が非常に
硬く脆いことを意味し、さらに基板との接着性が悪いた
め1例えばシリコンウニバーに塗布形成さ′れたフォト
レジス1〜膜にマスクを真空密着するとびび割れが生じ
、製作する集積回路の性能を低下させる。However, phenolic novolac resins generally exhibit high melting points, although the melting points vary considerably depending on the stigma. The high melting point means that the photoresist film made from this material is very hard and brittle, and also has poor adhesion to the substrate. When a mask is vacuum-adhered to a film, cracks occur, reducing the performance of the manufactured integrated circuit.
さらにポジ型フォトシジス1〜材料としてメチルメタク
リレ−1・−メタクリル酸共重合体の如き塩基可;容性
のポリマーに、カルボン酸の0.1)“−ジニトロアリ
ールメチルエステルを物理的に混合した乙の(特開昭j
iミリ−1フ44号)ら知られているしかしながら、従
来提案されてきたボン型フ木トレジス1−材トIはいず
れ乙本来的に塩基可溶性のポリマーに0−ナフトキノン
ジ゛アシ′l・1ヒa−杓やQ 、 +、1−ジニトロ
アリールメチルエステルの如き感光性でかつポリマーの
アルカリに対する溶解性を低下させるfヒ合杓を混合し
、フォトレジスト層を形成せしめるものであり、この場
合レジスト層ではポリマーに1例えばナフトキノンジア
ジド1ヒき杓を含む不溶性ポリマーが形成されており、
露光によってこのナフトキノンジアジド1ヒ合拘が光分
解し、アルカリ可溶性物質に変1ヒするため、ポリマー
のアルカリに対する溶解性が高くなることご利用して現
面せられる形式をとっている。従って、塩基可溶性ポリ
マーとナフトキノンジアジド1ヒ合拘との混合が充分均
一に行われないと、不溶性ポリマーが均質に得られず、
可溶性ポリマーと不溶性ポリマーの混在を来し、ネガ型
フォI・レジストよりは高解渫性とは言い得ても、スカ
ムと呼ばれる非画渫部の現は不良が発生しやすい問題を
含んでいる。Furthermore, 0.1)"-dinitroaryl methyl ester of carboxylic acid was physically mixed into a base-compatible polymer such as methyl methacrylate-1/-methacrylic acid copolymer as a positive-type Photosys 1 material. Otsu no (Tokukai Aki
However, the conventionally proposed bond-shaped wood resists 1-material I are known from Immili-1F No. 44). A photoresist layer is formed by mixing a photoresist and a photoresist such as Q, +, 1-dinitroaryl methyl ester, which is photosensitive and reduces the solubility of the polymer in alkali. In this case, in the resist layer, an insoluble polymer containing, for example, one scoop of naphthoquinone diazide is formed in the polymer,
When exposed to light, the naphthoquinone diazide is photodecomposed and converted into an alkali-soluble substance, so the polymer is developed by taking advantage of its increased solubility in alkali. Therefore, if the base-soluble polymer and the naphthoquinone diazide conjugate are not mixed sufficiently uniformly, an insoluble polymer cannot be obtained homogeneously.
It contains a mixture of soluble and insoluble polymers, and although it can be said to have higher resolving power than negative-type photo resists, it does have the problem of non-printing areas called scum, which can easily cause defects. .
発明が解決しようとする問題点
そこで、印刷板、フォトレジスト材料として有用な高解
像力でありながらスカムのような現像不良を発生しにく
いポジ型感光性材料が要望されており、かかる課題に答
えることが本発明目的て′ある。Problems to be Solved by the Invention Therefore, there is a need for a positive photosensitive material that is useful as printing plates and photoresist materials and has high resolution but is less likely to cause development defects such as scum. is the purpose of the present invention.
問題点を解決するための手段
本発明に従えば、上記目的がα、β−エチレン性不飽和
カルボン酸のし一ブチルエステル21)〜91)重量9
゜とその他のα、β−エチしン性不飽和(ヒき物8に〜
l+’1重量パ6の共重合で得られる数平均分子量51
、’I If〜3す、+)曲のアルカリ不溶性ビ2ニル
樹脂と前記ビニル樹脂に対し、f)、1〜20重産0ろ
のアリールオニウム塩からなる群より選ばれる光活性剤
とを故むポジ型感光性材料により達成せられる。Means for Solving the Problems According to the present invention, the above-mentioned object is achieved by preparing monobutyl esters of α,β-ethylenically unsaturated carboxylic acids 21) to 91) by weight 9
゜ and other α,β-ethynic unsaturations (to Hikimono 8~
Number average molecular weight 51 obtained by copolymerization of l + '1 weight pa 6
, 'I If ~ 3, +) To the alkali-insoluble vinyl resin and the vinyl resin, f) a photoactivator selected from the group consisting of 1 to 20 aryl onium salts. This is achieved using a positive-working photosensitive material that ages.
本発明で使用せられるビニル樹脂は、α、βエチレン性
不飽和カルボン酸のt−ブチルエステル2(;〜9+:
19o(重量)とその他のα、β−エチしン性不飽和1
ヒ合杓8(1〜1))゛)。のモノマーの共重合で得ら
れる数平均分子量51:l +1〜3 (+ 、 l川
りのアルカリ不溶性ビニル樹脂である。The vinyl resin used in the present invention is α,β ethylenically unsaturated carboxylic acid t-butyl ester 2(;~9+:
19o (by weight) and other α,β-ethynic unsaturations 1
Higashi 8(1-1))゛). It is an alkali-insoluble vinyl resin with a number average molecular weight of 51:l +1 to 3 (+, l) obtained by copolymerization of monomers.
α、β−エチレン性不飽和カルボン酸のt−ブチルエス
テルとしては、例えばアクリル酸、メタクリル酸、クロ
トン酸などのモノカルボン酸、マレイン酸、フマル酸、
シトラコン酸、メサコン酸、・イタコシ酸なとのジカル
ボン酸、無水マレイン酸、無水イタコン酸などの酸無水
物、マレイン酸モノエチル、フマル酸モノエチル、イタ
コン酸モノエチルなどジカルホ”ン酸のモノエステル類
なビ′の1−ブチルエステルをあげることができる。Examples of the t-butyl ester of α,β-ethylenically unsaturated carboxylic acid include monocarboxylic acids such as acrylic acid, methacrylic acid, and crotonic acid, maleic acid, fumaric acid,
Dicarboxylic acids such as citraconic acid, mesaconic acid, and itaconic acid; acid anhydrides such as maleic anhydride and itaconic anhydride; and dicarboxylic acid monoesters such as monoethyl maleate, monoethyl fumarate, and monoethyl itaconate. 1-butyl ester of ' can be mentioned.
また本発明に使用されるその他のα、β、β−エチレン
飽和(ヒき物としては、例えば、メチルメタクリレ−1
〜、エチルメタクリレ−j・、n−ブチルメタクリレ−
t・、g−ブチルメタクリレートなどのメタクリル酸ア
ルキルエステル、メチルアクフレー1へ、イソプロピル
アクリレートなどのアクフル酸アルキルエステル、シク
ロへキシルメタクJレーl〜、2−メチルシクロへキシ
ルメタ7リレートなとのメタクリル酸環状アルキルエス
テル、シクロへキシルアクリレ−1〜52−メチルシク
ロヘキシルアクリレートなどのアクリルl!f2環状ア
ルキルエステル、フェニルメタクリレート、ベンジルメ
タクリトートなどのメタクリル酸アルキルエステル、フ
ェニルアクリレート、ベンジルアクリレートなとのアク
リル酸アリールエステル。In addition, other α, β, β-ethylene saturated substances used in the present invention (for example, methyl methacrylate-1
~, ethyl methacrylate, n-butyl methacrylate
Methacrylic acid alkyl esters such as t-, g-butyl methacrylate, methyl acufury 1, acfuric acid alkyl esters such as isopropyl acrylate, cyclohexyl methacrylate, 2-methylcyclohexyl methacrylate, and cyclic methacrylic acid Alkyl esters, acrylics such as cyclohexyl acrylate-1-52-methylcyclohexyl acrylate! f2 Cyclic alkyl esters, methacrylic acid alkyl esters such as phenyl methacrylate and benzyl methacrytate, and acrylic acid aryl esters such as phenyl acrylate and benzyl acrylate.
マしイン酸ジエチル、フマル酸ジエチル、イタコン酸ジ
エチルなどのジカルボン酸のシ′エステル類、2−ヒド
ロキシエチルメタクリレート、2−ヒ1〜口キシプ口ビ
ルメタクリレ−1−などのメタクリル酸し1ヘロキシア
ルキルエステル類、スチレン、α−メチルスチレン、0
−メチルスチレン、m−メチルスチレン、ρ−メチルス
チレン、ビニル1−ルエン、F〕−メ1〜キシスチレン
、アクυロニI・リル、メタクリレートリル、塩(ヒビ
ニル、塩1ヒヒニリデン、アクリルアミド、メタクリル
アミド、酢酸ビニル、エチレン、)゛ロビしシ フタジ
エン、ビニルアルコール4゛とのα、β−エチレン性不
性用飽和1ヒhf
上記のα,/′Jーエチレン性不たと和カルボン酸し一
ブ千ルエステルとその他のα.β.βーエチレン飽和1
ヒき杓とは前者21)〜す1)重量++,;と陵KS
+.f〜10重量゛oの割3て′共重合せしめられるが
、数平均分子−服が50ξl〜3+) 、 +1)+)
の範囲内の生成ポリマーて′アルカリ不溶性であるよう
に、他の(1 、βーエチトン性不飽和1ヒき杓の種類
ならびに量が選定せられねばならない,共重合反応は常
法に従い、溶液重合、懸濁重き、乳(ヒ重き等任意の方
法により実施riI能である
本年明ではこのように、t−ブチルエステル基か3数ベ
ンダシ1〜されているアルカリ不溶性のフィルム形成性
ビニル樹脂に対し、特定量の持定電話性イリ、即ち、ビ
ニル樹脂重量に対し、1)、1〜21)“°1,のアリ
ールスルホニウム塩,あるいはアリールヨー1−二r′
7ム塩から選ばれる光活性剤が配ませられる、より具体
的にはかかる光活性剤は下記の如キアリールスルホニウ
ム塩。Dicarboxylic acid esters such as diethyl marinate, diethyl fumarate, and diethyl itaconate; Esters, styrene, α-methylstyrene, 0
-methylstyrene, m-methylstyrene, ρ-methylstyrene, vinyl-1-luene, F]-methyl-xystyrene, acrylonitrile, methacrylatelyl, salt (hibinyl, salt-1hynylidene, acrylamide, methacrylamide, Vinyl acetate, ethylene, ) ``alpha, β-ethylenically unsaturated carboxylic acid ester with vinyl alcohol 4'' and α,/'J-ethylenically unsaturated carboxylic acid with vinyl alcohol 4゛and other α. β. β-ethylene saturation 1
The former 21) ~ 1) Weight ++,; and Ryo KS
+. Copolymerization is carried out at 3% of f~10 weight o, but the number average molecular weight is 50ξl~3+), +1)+)
The type and amount of the other (1) β-ethitonic unsaturation must be selected so that the resulting polymer is alkali-insoluble within the range of It can be carried out by any method such as suspension, suspension, milk, etc. In the new year, we have developed an alkali-insoluble film-forming vinyl resin containing t-butyl ester groups. On the other hand, for a specific amount of constant telephone properties, that is, the weight of the vinyl resin, 1), 1 to 21) "°1," arylsulfonium salt, or aryl yo 1-2r'
A photoactive agent selected from the following salts is provided, more specifically such a photoactive agent is a chiarylsulfonium salt as described below.
あるいはアリールヨードニウム塩 のいずれか1種以上が好都合に使用せられる。Or aryliodonium salt Any one or more of these may be advantageously used.
さらに、光活性剤の所定の波長(光)吸収を高くするた
め、各種の光増感剤を光活性剤と組会わせて使用するこ
とができる。本発明で使用することができる光増感剤と
しては、ベンゾフェノン、2−クロロチオキサントン″
、アントロン、9−工l・キシアントラセン、アントラ
セン、ピレン、ペリレン、フェノチアジン、ベンジル、
アクリジンオレンジ゛、ヘンソ′フラビシ、セトフラビ
ンーT、アントラキノン、9,10−ジフエニIレアン
トラセン、9−フルオレノン等が好ましい。Additionally, various photosensitizers can be used in combination with the photoactive agent to increase the absorption of a given wavelength (light) of the photoactive agent. Photosensitizers that can be used in the present invention include benzophenone, 2-chlorothioxanthone''
, anthrone, 9-ethyl-xyanthracene, anthracene, pyrene, perylene, phenothiazine, benzyl,
Preferred are acridine orange, hexoflavin, cetoflavin-T, anthraquinone, 9,10-diphenyleneanthracene, 9-fluorenone, and the like.
本発明のポジ型感光性材料はビニル樹脂と光活性剤およ
びfg・要により光増感剤からなる均質配き物でしシス
ト層を形成せしめる際に樹脂とナフトキノンジアジド1
ヒ合物の混合て′不溶性IM脂がjtられる従来型の感
光性材料とことなり、ビニル樹脂は本来的にアルカリ不
溶性で単にフィルム形成能の故にしシスト層を形成する
にすぎないか4゛9、アルカリ可溶性の樹脂とアルカリ
不溶性の樹脂が混在することによる解倣度の低下および
非画顔部の税源不良(スカム)の発生といった問題は全
く存在しない、
本発明の感光性材料によるレジスI・では紫外線等の活
性光線による露光で光活性剤が励起され、かかる光カチ
オン触媒のためにt−ブチルエステル基がカルボキシル
基とイソブチンに分解する。The positive photosensitive material of the present invention is a homogeneous mixture consisting of a vinyl resin, a photoactivator, FG, and optionally a photosensitizer.
Unlike conventional photosensitive materials in which insoluble IM resins are mixed with resins, vinyl resins are inherently alkali-insoluble and merely form a cyst layer due to their film-forming ability. 9. The resist I made of the photosensitive material of the present invention does not have any problems such as a decrease in the degree of conformation and the occurrence of scum in non-image areas due to the mixture of alkali-soluble and alkali-insoluble resins. In *, the photoactive agent is excited by exposure to actinic light such as ultraviolet rays, and the t-butyl ester group is decomposed into carboxyl group and isobutyne due to the photocationic catalyst.
この分解反応を(戻道させるため、露光後61)〜15
1〕℃の温度範囲で熱処理することにより、本来アルカ
リ不溶性のビニル樹脂がアルカリ可溶樹脂に変IQされ
るのである9
(,1って、本発明のポジ型感光性材料は極めて高感度
に感応する高鼾魔性で且つスカムのような現1憤不良の
発生しにくいレジストを与える1キ徴を有する。This decomposition reaction (61 after exposure to return) to 15
1] By heat treatment in the temperature range of 1°C, the vinyl resin, which is originally alkali-insoluble, is converted into an alkali-soluble resin9 (1). It has a unique characteristic that provides a resist that is highly sensitive and is less likely to cause surface defects such as scum.
駈良丘1
1・バエ295部を反応容器に仕込み、1)]0℃に昇
温した陵、t−ブチルメタクリレート40部、n −ブ
チルアクリレート34部、メチルメタクリレート26部
、アゾビスイソブチロニトリルl 、 (1部を混合溶
解したモノマー溶液を反応容器に3時間かけて滴下した
。30分後、さらにトルエン5部、アゾビスイソブチロ
ニトリル0.1)5部の開始剤溶液を加えて1時間反応
させてt−ブチルエステル基を有する樹脂溶液Aを得た
。295 parts of Kagaraoka 1 1 flies were charged into a reaction vessel, 1)] The heat was raised to 0°C, 40 parts of t-butyl methacrylate, 34 parts of n-butyl acrylate, 26 parts of methyl methacrylate, and azobisisobutyro. A monomer solution in which 1 part of nitrile (1 part) was mixed and dissolved was added dropwise to the reaction vessel over 3 hours. After 30 minutes, an initiator solution of 5 parts of toluene and 5 parts of azobisisobutyronitrile was added. The mixture was reacted for 1 hour to obtain a resin solution A having t-butyl ester groups.
1魂λI
l・バエ295部を反応容器に仕込み、85℃に昇温し
た陵、t−ブチルメタクリレート70部、2−エチルへ
キシルメタクリレート20部、2−ヒドロキシエチルメ
タクリレ−hll)部、アゾビスイソブチロニトリル1
.り部を混合溶解したモノマー溶液を反応容器に3時間
かけて滴下した。30分篩、さらにトルエン5部、アゾ
ビスイソブチロニトリル(+ 、 I:+ 5部の開t
lf3削溶消を加乙て1時間反応させてt−ブチルエス
テル基を有する樹脂溶液Bを得た。1 soul λI 295 parts of flies were charged into a reaction vessel, and the temperature was raised to 85°C. Bisisobutyronitrile 1
.. A monomer solution in which the remaining parts were mixed and dissolved was added dropwise to the reaction vessel over a period of 3 hours. Sieve for 30 minutes, and then add 5 parts of toluene and 5 parts of azobisisobutyronitrile (+, I:+5 parts).
The reaction was carried out for 1 hour with the addition of lf3 deletion, and a resin solution B having a t-butyl ester group was obtained.
會式1
トルニジ95部を反応容器に仕込み、1 t)l)’C
に昇温した峻、t−ブチルアクリレ−)−41)部、n
−ブチルアクリレ−1・34部、メチルメタクリレート
2b部、アゾビスイソブチロニトリル 1.1]部を混
合溶解したモノマー溶液を反応容器に3時間かけて滴下
した。3]、;分後、さらにトルエン5部、アゾビスイ
ソブチロニトリルl) 、 )’15部の開始剤溶液を
加えて1時間反応させてt−ブチルエステル基を有する
樹脂溶液Cを得な。Form 1: Charge 95 parts of Tornizi into a reaction vessel, and add 1 t)l)'C
41) parts of t-butyl acrylate, n
A monomer solution prepared by mixing and dissolving 1.34 parts of -butyl acrylate, 2b parts of methyl methacrylate, and 1.1 parts of azobisisobutyronitrile was added dropwise to the reaction vessel over 3 hours. After 3 minutes, an initiator solution containing 5 parts of toluene and 15 parts of azobisisobutyronitrile was added and reacted for 1 hour to obtain a resin solution C having t-butyl ester groups. .
金]阻」ユ
トルエン95部を反応容器に仕込み、I O+J Cに
昇温した後、t−ブチルアクリレート40部、n−ブチ
ルアクリレ−1・35部、メチルメタクリレ−1・15
部、2−ヒドロキシエチルメタクリレート10部、アゾ
ビスイソブチウニ1ヘリル1.0部を混合溶解した七ツ
マー溶液を反応容器に3時間かけて滴下した。30分後
、さらにトルエン5部、アゾビスイソブチロニトリルl
) 、 l)5部の開始剤溶液を加えて1時間反応させ
てt−ブチルエステル基を有する樹脂溶液りを得た。After charging 95 parts of utolene into a reaction vessel and raising the temperature to IO+JC, 40 parts of t-butyl acrylate, 1.35 parts of n-butyl acrylate, and 1.15 parts of methyl methacrylate were added.
A seven-mer solution prepared by mixing and dissolving 10 parts of 2-hydroxyethyl methacrylate and 1.0 part of azobisisobutycin sea urchin was added dropwise to the reaction vessel over 3 hours. After 30 minutes, add 5 parts of toluene and 1 azobisisobutyronitrile.
), l) 5 parts of an initiator solution were added and reacted for 1 hour to obtain a resin solution having t-butyl ester groups.
金1u雄j−
トルエン95部を反応容器に仕込み、80℃に昇温した
後、t−ブチルアクリレ−1−30部、マレイン酸ジt
−ブチルエステル10部、ローブチルアクリレ−1−3
5部、メチルメタクリレート25部、アゾビスイソブチ
ロニトリル1.0部を混合溶解した七ツマー溶液を反応
容器に3時間かけて滴下した。After charging 95 parts of toluene into a reaction vessel and raising the temperature to 80°C, 1-30 parts of t-butyl acrylate and 1-30 parts of t-maleic acid were added.
-10 parts of butyl ester, lobethyl acrylate-1-3
A seven-mer solution prepared by mixing and dissolving 5 parts of methyl methacrylate, 25 parts of methyl methacrylate, and 1.0 part of azobisisobutyronitrile was added dropwise to the reaction vessel over 3 hours.
3()分蔽、さらにトルエン5部、アゾビスイソブチコ
ニ1ヘリル(1、l:l 5部の開始剤溶液を加えて1
時間反応させてt〜ブチルエステル基を有する樹脂溶液
Eを得た。3 () separation, then add 5 parts of toluene, 1 heliyl azobisisobutylene (1, l:l 5 parts of initiator solution and 1
The reaction was carried out for a period of time to obtain a resin solution E having t-butyl ester groups.
會逼コ引亘」」し較」目LL
トルエン95部を反応容器に仕込み、1)部0℃に昇温
した後、t−ブチルアクリレート10部、n−ブチルア
クリレ−1・60部、メチルメタクリレ−1・30部、
アゾビスイソブチロニトリル1.0部を混合溶解したモ
ノマー溶液を反応容器に3時間かけて滴下した。3(〕
分陵、さらにトルエン5部、アゾビスイソブチロニトリ
ル1)、05部の開始剤溶液を加えて1時間反応させて
t−ブチルエステル基を有する樹脂溶液Fを得た。LL Charge 95 parts of toluene into a reaction vessel, heat 1) part to 0°C, and add 10 parts of t-butyl acrylate, 1.60 parts of n-butyl acrylate, and methyl methacrylate. Le-1 30 copies,
A monomer solution in which 1.0 part of azobisisobutyronitrile was mixed and dissolved was added dropwise to the reaction vessel over a period of 3 hours. 3()
An initiator solution containing 5 parts of toluene, 1) and 0.5 parts of azobisisobutyronitrile was added to the mixture, and the mixture was reacted for 1 hour to obtain a resin solution F having t-butyl ester groups.
飢えλエエル聚皿月つ−
トルエン95部を反応容器に1上込み、1 りt、+
=<2に昇温した竣、t−ブチルアクリレート92部、
2−ヒドロキシエチルメタクリレ−1〜8部、アゾビス
イソブチロニトリル1.1)部を混合溶解したモノマー
溶液を反応容器に3時間かけて滴下した。3り汁後、さ
らにI・ルエン5部、アゾビスイソブチロニトリル0
、05部の開始剤溶液を加えて1時間反応させてt−ブ
チルエステル基を有する樹脂溶液Gを得た。Add 95 parts of toluene to the reaction vessel, add 1 t, +
=<2, 92 parts of t-butyl acrylate,
A monomer solution prepared by mixing and dissolving 1 to 8 parts of 2-hydroxyethyl methacrylate and 1.1 parts of azobisisobutyronitrile was added dropwise to the reaction vessel over 3 hours. 3 After the juice, add 5 parts of I. luene and 0 azobisisobutyronitrile.
, 05 parts of an initiator solution were added thereto and reacted for 1 hour to obtain a resin solution G having t-butyl ester groups.
ム 8
トルエン 140部を反応容器に1±込み、70℃に昇
i品した後、t−ブチルアクリレート40部、n−ブチ
ルアクリレート34部、メチルメタクリレ−1・26部
、アゾビスイソブチロニトリル0.8部を混合溶解した
モノマー溶液を反応容器に3時間かけて滴下した。30
分後、さらにトルエン5部、アゾビスイソブチロニトリ
ルQ 、 l)5部の開始剤溶液を加えて1時間反応さ
せてt−ブチルエステル基を有する樹脂溶液Hを得た。8. Pour 140 parts of toluene into a reaction vessel and heat to 70°C, then add 40 parts of t-butyl acrylate, 34 parts of n-butyl acrylate, 1.26 parts of methyl methacrylate, and azobisisobutyro. A monomer solution in which 0.8 part of nitrile was mixed and dissolved was added dropwise to the reaction vessel over 3 hours. 30
After a few minutes, an initiator solution containing 5 parts of toluene and 5 parts of azobisisobutyronitrile Q, 1) was added, and the mixture was reacted for 1 hour to obtain a resin solution H having t-butyl ester groups.
合成例1〜8で得られた樹脂A−HについてG P C
で分子量測定した結果を表−1に示した。G P C for resins A-H obtained in Synthesis Examples 1 to 8
The results of molecular weight measurements are shown in Table 1.
(以下余白)
T B M A = t−ブチルメタクリレートTBA
=t−ブチルアクリレー1・?vIPvlA =
メチルメタクリレー1・n−BA=n−フチルアクリレ
−1〜
2− E HM A = 2−エチルヘキシルメタクリ
レート
2− HE〜IA=2−ヒドロキシエチルメタクリレ−
1・
D T B M−マレイン′酸シ’−t−ブチlレエス
テル夫潴上り一
合成例1で得られたt−ブチルエステル基を有する樹脂
溶液A I +、’l gに光活性剤としてトリフェ
ニルスルホニウムへキサフルオロアーセネート、4gを
加えた酸、混きして感光性溶液を得な。(Left below) T B MA = t-butyl methacrylate TBA
=t-butyl acrylate 1.? vIPvlA =
Methyl methacrylate 1・n-BA=n-phthyl acrylate-1-2-E HMA=2-ethylhexyl methacrylate 2-HE~IA=2-hydroxyethyl methacrylate-
1. D T B M-maleic acid cy'-t-butylene ester Fubata Uriichi The resin solution A I +,'lg having the t-butyl ester group obtained in Synthesis Example 1 was added as a photoactivator. Add triphenylsulfonium hexafluoroarsenate, 4 g, acid and mix to obtain a photosensitive solution.
二のン容iffをf)、5ノ、tmのフィルター(3通
して濾過した、濾過した溶液分アルミニウ14板の上に
置き、41)31 r p mて゛スピンコーティング
し、2〜3μmの被膜を得た、この被膜を80℃で1時
間乾燥させた後、縮小投影露光装置(g線、NA=%3
5)で1.1)から2,1:171mまで0.1μm刻
みで1対1ライン・アンド スペースパターンを有する
レクチルを介して露光した7同時に5μmライン・アン
ド・スペースパターンら露光した。露光j麦、13す°
Cで5分間熱処理した後、メタゲイ酸すトリウム水溶液
(1モル06溶液)で60秒間現f象し、30秒間水洗
して乾燥しな。Place the filtered solution on an aluminum 14 plate and spin coat it at 31 rpm to form a 2-3 μm coating. After drying this film at 80°C for 1 hour, it was exposed to a reduction projection exposure device (g-line, NA=%3
In step 5), from 1.1) to 2,1:171 m was exposed through a reticle having a 1:1 line and space pattern in 0.1 μm increments.7 At the same time, exposure was performed from a 5 μm line and space pattern. Exposure j wheat, 13 degrees
After heat treatment at C for 5 minutes, it was treated with an aqueous solution of sodium chloride (1 mol 06 solution) for 60 seconds, washed with water for 30 seconds, and dried.
このようにして得られたレジストパターンを走査型電子
顕倣鏡で観察して以下の評価を行った。The resist pattern thus obtained was observed using a scanning electron microscope and the following evaluations were made.
その結果を表−2に示した。The results are shown in Table-2.
感度は5.0μmのマスクパターンを再現する露光エネ
ルギーで示した。Sensitivity was expressed as exposure energy that reproduces a 5.0 μm mask pattern.
解は力は2.1’)amのマスクパターンを再現する露
光量における限界解魔力を意味し、そのμm数で示した
。The solution means the limit dissolving power at an exposure dose that reproduces a mask pattern of 2.1') am, and is expressed in the number of μm.
非画代部の現代不良(スカム)については、1紋細レジ
ストパターンの周辺部をS E Mにて観察し、決定し
た。Modern defects (scum) in the non-image margin area were determined by observing the peripheral area of a single fine resist pattern using SEM.
支克匠エヱニ
t−ブチルエステル基を有する(M脂溶液、光活性剤を
表−2の配合に基づき混合した俊、実施例1と同様な方
法て゛レジストパターンを形成し、レジスト性能を評価
した。その結県を表−2に示した。A resist pattern was formed in the same manner as in Example 1, and the resist performance was evaluated. The prefectures are shown in Table 2.
ルtば生上二」辷
き成例6,7.8で得られた樹脂溶液、光活性剤を表−
2の配きに基つき混合した陵、実施例1と同様な方法で
レジストパターンを形成し、レジスト性能を評価した。Table 1 shows the resin solution and photoactivator obtained in Example 6 and 7.8.
A resist pattern was formed in the same manner as in Example 1 using a mixed pattern based on the layout of No. 2, and the resist performance was evaluated.
その結果を表−2に示した。The results are shown in Table-2.
(以下余白) (注1)スカム評価は次の基串で行った。(Margin below) (Note 1) Scum evaluation was performed using the following basic criteria.
O全く見られない
△ パターンと基板との界面にわずかに見られる
× 全面に見られる
t−ブチルエステル基を有する樹脂溶液Cに表−3に示
すヨードニウム塩である光活性剤を加えて混身した俊、
実施PAlと同様な方法でレジストパターンを形成し、
レジスト性能を評価した。その結果を表−3に示した。O not seen at all △ Slightly seen at the interface between the pattern and the substrate Shun,
A resist pattern is formed in the same manner as the actual PAl,
Resist performance was evaluated. The results are shown in Table-3.
(U1)〜LL
し−ブチルエステル基を有する樹脂溶液、光活性剤から
なる溶液にさらに表−3に示す光増惑剖を加えて混きし
た後、実施例1と同様な方法でレジストパターンを形成
し、レジスト性能を評価した。その結果を表−3に示し
た。(U1) to LL After adding and mixing the photosensitizer shown in Table 3 to a solution consisting of a resin solution having a butyl ester group and a photoactive agent, a resist pattern was formed in the same manner as in Example 1. was formed and the resist performance was evaluated. The results are shown in Table-3.
ル撒ヱ一エ
クレゾールノボラ1り樹脂〈分子量= 1301)0、
メタ7・バラ比率=607’4す)10gに0−ナフl
−キノンジ゛アシ゛ドー5−スルホン酸クロライドエス
テル2.6gをエチルセロソルブアセテート21)g(
:j容解した陵、実施例1と同様な方法でレジストパタ
ーンを形成し、レジスト性能を評価しな。その結果を表
−3に示した。Ecresol Novola 1 resin (molecular weight = 1301) 0,
Meta 7・Rose ratio = 607'4) 10g to 0-Nafl
- 2.6 g of quinone diacid 5-sulfonic acid chloride ester was mixed with 21) g of ethyl cellosolve acetate (
A resist pattern was formed in the same manner as in Example 1, and the resist performance was evaluated. The results are shown in Table-3.
以上の結果から分かるように、本発明のボン型感光性材
料を用いるといずれも高感度、高鼾1象力、かつスカム
のない微細パターンが得られる。As can be seen from the above results, when the Bong-type photosensitive material of the present invention is used, fine patterns with high sensitivity, high snoring power, and no scum can be obtained.
(以下余白) C)13(Margin below) C) 13
Claims (5)
ルエステル20〜90重量% その他のα、β−エチレン性不飽和化合物 80〜10重量% の共重合で得られる数平均分子量500〜30,000
のアルカリ不溶性ビニル樹脂と、前記ビニル樹脂に対し
、0.1〜20重量%のアリールオニウム塩からなる群
より選ばれる光活性剤とを含むポジ型感光性材料。(1) Number average molecular weight obtained by copolymerization of 20 to 90% by weight of t-butyl ester of α,β-ethylenically unsaturated carboxylic acid and 80 to 10% by weight of other α,β-ethylenically unsaturated compounds, with a number average molecular weight of 500 to 30,000
and a photoactive agent selected from the group consisting of arylonium salts in an amount of 0.1 to 20% by weight based on the vinyl resin.
を特徴とする請求項第1項記載のポジ型感光性材料。(2) The positive-working photosensitive material according to claim 1, wherein the arylonium salt is a sulfonium salt.
を特徴とする請求項第1項記載のポジ型感光性材料。(3) The positive-working photosensitive material according to claim 1, wherein the arylonium salt is an iodonium salt.
特徴とする請求項第1項記載のポジ型感光性材料。(4) The positive photosensitive material according to claim 1, which contains 0.01 to 10% by weight of a photosensitizer.
ルエステルが、アクリル酸t−ブチルエステルおよびメ
タクリル酸t−ブチルエステルであることを特徴とする
請求項第1項記載のポジ型感光性材料。(5) The positive-working photosensitive material according to claim 1, wherein the t-butyl ester of α,β-ethylenically unsaturated carboxylic acid is acrylic acid t-butyl ester and methacrylic acid t-butyl ester. sexual material.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1167331A JPH0331845A (en) | 1989-06-29 | 1989-06-29 | Positive type photosensitive material |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1167331A JPH0331845A (en) | 1989-06-29 | 1989-06-29 | Positive type photosensitive material |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH0331845A true JPH0331845A (en) | 1991-02-12 |
Family
ID=15847761
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP1167331A Pending JPH0331845A (en) | 1989-06-29 | 1989-06-29 | Positive type photosensitive material |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH0331845A (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH04226461A (en) * | 1990-04-24 | 1992-08-17 | Internatl Business Mach Corp <Ibm> | Photoresist composition in liquid application type which can undergo water processing |
JPH04230758A (en) * | 1990-04-24 | 1992-08-19 | Internatl Business Mach Corp <Ibm> | Dry-film type photoresist composition which can undergo water processing |
JPH0643653A (en) * | 1992-07-27 | 1994-02-18 | Nippon Telegr & Teleph Corp <Ntt> | Positive resist material |
JPH10307399A (en) * | 1997-05-09 | 1998-11-17 | Oki Electric Ind Co Ltd | Photosensitive resin composition for resist |
-
1989
- 1989-06-29 JP JP1167331A patent/JPH0331845A/en active Pending
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH04226461A (en) * | 1990-04-24 | 1992-08-17 | Internatl Business Mach Corp <Ibm> | Photoresist composition in liquid application type which can undergo water processing |
JPH04230758A (en) * | 1990-04-24 | 1992-08-19 | Internatl Business Mach Corp <Ibm> | Dry-film type photoresist composition which can undergo water processing |
JPH0643653A (en) * | 1992-07-27 | 1994-02-18 | Nippon Telegr & Teleph Corp <Ntt> | Positive resist material |
JPH10307399A (en) * | 1997-05-09 | 1998-11-17 | Oki Electric Ind Co Ltd | Photosensitive resin composition for resist |
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