JPH03297130A - Epitaxial growth method of si - Google Patents
Epitaxial growth method of siInfo
- Publication number
- JPH03297130A JPH03297130A JP10061190A JP10061190A JPH03297130A JP H03297130 A JPH03297130 A JP H03297130A JP 10061190 A JP10061190 A JP 10061190A JP 10061190 A JP10061190 A JP 10061190A JP H03297130 A JPH03297130 A JP H03297130A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- gas
- si2h6
- supplied
- thickness
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 title claims abstract description 25
- 239000000758 substrate Substances 0.000 claims abstract description 40
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims abstract description 15
- 229910000077 silane Inorganic materials 0.000 claims abstract description 8
- 238000010438 heat treatment Methods 0.000 claims 1
- PZPGRFITIJYNEJ-UHFFFAOYSA-N disilane Chemical compound [SiH3][SiH3] PZPGRFITIJYNEJ-UHFFFAOYSA-N 0.000 abstract description 13
- 229910007264 Si2H6 Inorganic materials 0.000 abstract description 12
- 125000004435 hydrogen atom Chemical group [H]* 0.000 abstract description 7
- XMIJDTGORVPYLW-UHFFFAOYSA-N [SiH2] Chemical compound [SiH2] XMIJDTGORVPYLW-UHFFFAOYSA-N 0.000 abstract description 5
- 239000002994 raw material Substances 0.000 abstract description 5
- 125000004429 atom Chemical group 0.000 abstract 1
- 239000002052 molecular layer Substances 0.000 description 5
- 238000010586 diagram Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000001179 sorption measurement Methods 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000001947 vapour-phase growth Methods 0.000 description 1
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、半導体素子の製造工程の一つであるＳｉのエ
ピタキシアル成長方法に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a method for epitaxial growth of Si, which is one of the manufacturing steps of semiconductor devices.
従来、この種のＳｉのエピタキシアル成長方法としては
、例えば、ジャーナル・エレクトロケミカル・ソサイエ
テイー（Ｊｏｕｒｎａｌ−Ｅｌｅ−ｃｔｒｏｃｈｅｍｉ
ｃａｌ−３ｏｃｉｅｔｙ）第１０８巻、第７号（１９８
１年）の６４９頁に記載されているように、Ｓｉを含む
化合物をガス状にしたシラン系ガスを基板表面に供給し
て、Ｓｉのエピタキシアル成長を行なう気相成長方法が
ある。Conventionally, as this type of Si epitaxial growth method, for example, the Journal-Ele-ctrochemistry method has been used.
cal-3ociety) Volume 108, No. 7 (198
As described on page 649 of 1999, there is a vapor phase growth method in which Si is epitaxially grown by supplying a silane-based gas containing a Si-containing compound to the substrate surface.
また、別の方法として、例えば、応用物理５７巻、第９
号（１９８８年）の１３９３頁に記載されているように
、Ｓｉの塊りを電子線等で溶解し、そこから発生したＳ
ｉの分子線を基板表面に供給して、Ｓｉを成長させる分
子線エピタキシアル成長法がある。In addition, as another method, for example, Applied Physics Volume 57, 9
No. (1988), p. 1393, a lump of Si is melted with an electron beam, etc., and the S generated from it is
There is a molecular beam epitaxial growth method in which Si is grown by supplying a molecular beam of i to the surface of a substrate.
上述した従来のいずれの方法も、基板温度、原料の供給
量と供給時間等のアナログ量を変化させて、成長膜の厚
さを制御する方法であり、これらのアナログ量の微小な
ゆらぎが、成長膜厚の制御が困難にする欠点がある。ま
た、Ｓｉ成長層の膜厚は、本来、原子層の距離の整数倍
であるデジタル量である。例えば、Ｓｉの（１００）面
の場合は、この原子層の距離は約０．１４ｎｍである。In all of the conventional methods described above, the thickness of the grown film is controlled by changing analog quantities such as the substrate temperature and the supply amount and supply time of raw materials, and minute fluctuations in these analog quantities are There is a drawback that it is difficult to control the thickness of the grown film. Further, the thickness of the Si growth layer is originally a digital quantity that is an integral multiple of the distance between atomic layers. For example, in the case of the (100) plane of Si, the distance between the atomic layers is about 0.14 nm.
このような距離の制御をアナログ量として制御すること
は本質的に不可能である。すなわち、このような制御方
法で、超格子デバイスや原子層ドーピングの作製に適用
することが困難である。It is essentially impossible to control such distance as an analog quantity. That is, it is difficult to apply such a control method to the production of superlattice devices or atomic layer doping.
本発明の目的は、かかる欠点を解消し、Ｓｉ基板への原
料の供給回数というデジタル量の制御により、成長膜厚
を正確に制御できるＳｉのエピタキシアル成長方法を提
供することである。An object of the present invention is to eliminate such drawbacks and provide a method for epitaxially growing Si in which the thickness of the grown film can be accurately controlled by digitally controlling the number of times raw materials are supplied to the Si substrate.
１、本発明のＳｉのエピタキシアル成長方法の第１の方
法は、（１００）面をもつＳｉ （１００）基板を加熱
し、シラン系ガスを供給し、Ｓｉ層を成長させるＳｉの
エピタキシアル成長方法において、前記基板の温度を２
００〜５００℃に保つとともに前記シラン系ガスをＳｉ
２Ｈ６として、Ｃｌ０と交互に供給することを特徴とし
ている。1. The first method of the Si epitaxial growth method of the present invention is Si epitaxial growth in which a Si (100) substrate with a (100) plane is heated, a silane gas is supplied, and a Si layer is grown. In the method, the temperature of the substrate is
While maintaining the temperature at 00 to 500°C, the silane gas is
It is characterized in that it is supplied alternately with Cl0 as 2H6.
２、本発明のＳｉのエピタキシアル成長方法の第２の方
法は、前記基板の温度を３００〜５００Ｃに保ち、前記
シラン系ガスをＳｉＨ４として、Ｃｌ２と交互に供給す
ることを特徴としている。2. The second method of the Si epitaxial growth method of the present invention is characterized in that the temperature of the substrate is maintained at 300 to 500 C, and the silane gas is supplied as SiH4 and Cl2 alternately.
本発明によれば、Ｓｉ基板への原料の供給回数というデ
ジタル量を制御することによって、成長膜厚を正確にＩ
ｉＪ御できるＳｉのエピタキシアル成長方法が得られる
。According to the present invention, by controlling the digital quantity of the number of times the raw material is supplied to the Si substrate, the thickness of the grown film can be accurately determined by controlling the I.
A method for epitaxial growth of Si that can control iJ is obtained.
次に、この作用を図面を参照して説明する。Next, this effect will be explained with reference to the drawings.
第１図（ａ＞及び（ｂ）は本発明の第１のＳｉのエピタ
キシアル成長方法の作用を説明するための模式図である
。まず、第１図（ａ）に示すように、温度２００〜５０
０℃に保たれた（１００）面をもつＳｉ （１００）基
板２に５ｉ２Ｈ６１１を供給すると、５ｉ２Ｈ６１１は
Ｓｉ （１００）基板２上で解離し、５ｉＨ２１２と５
ｉＨ４１０に分解される。次に、この５ｉＨ２１２は、
５ｉ（Ｚｏｏ）基板２に存在する未結合手８と結合して
１分子層である吸着５ｉＨ２９を形成する。FIGS. 1(a) and (b) are schematic diagrams for explaining the effect of the first Si epitaxial growth method of the present invention. First, as shown in FIG. ~50
When 5i2H611 is supplied to a Si (100) substrate 2 with a (100) plane kept at 0°C, 5i2H611 dissociates on the Si (100) substrate 2 and forms 5iH212 and 5iH611.
Decomposed into iH410. Next, this 5iH212 is
5i (Zoo) is combined with the dangling bonds 8 present in the substrate 2 to form a single molecular layer of adsorbed 5iH29.
通常、５ｊ２Ｈ６による結晶成長は、さらにＳｉ２Ｈ６
の供給を続けると、２分子層目、３分子層目とＳｉ層の
成長が続くが、本発明の方法では、基板の温度が５００
℃以下であるため、ＳｉＨ２が一分子層吸着した後は、
Ｈ原子が表面から離脱しないため、２分子層目以降は吸
着しない。また、２００℃以下であると、ジシランによ
る成長速度が遅く、所定の膜厚のＳｉの成長膜が得られ
ない。従って、この基板温度が２００℃ないし５００℃
は適切な温度である。Usually, crystal growth by 5j2H6 is further accompanied by Si2H6
If the supply of Si continues, the second and third molecular layers continue to grow, but in the method of the present invention, the substrate temperature is 500°C.
Since the temperature is below ℃, after one molecular layer of SiH2 is adsorbed,
Since H atoms do not leave the surface, they are not adsorbed in the second and subsequent molecular layers. Further, if the temperature is 200° C. or lower, the growth rate due to disilane is slow and a grown Si film of a predetermined thickness cannot be obtained. Therefore, this substrate temperature is between 200°C and 500°C.
is the appropriate temperature.
次に、第１図（ｂ）に示すように、残留するＳｉ２Ｈ６
ガスを完全に排気した後、Ｃｌ２７のガスをＳｉ （１
００）基板２に供給すると、Ｃｌ２７のガス７は、表面
に吸着しているＨ原子と次の式（１〉で反応し、ＨＣＩ
６となり、基板表面よりＨ原子を除去する。Next, as shown in FIG. 1(b), the remaining Si2H6
After completely exhausting the gas, the Cl27 gas was replaced with Si (1
00) When supplied to the substrate 2, the Cl27 gas 7 reacts with the H atoms adsorbed on the surface according to the following formula (1), resulting in HCI
6, and H atoms are removed from the substrate surface.
Ｃｌ２＋２Ｈ→２ＨＣＩ・−・・・・・−・・・・・・
・（１）このようにして、Ｓｉ２Ｈ６供給以前の初期状
態に戻る。このサイクルを繰り返すことによって、１サ
イクルにつき１分子層のデジタル成長が達成する。Cl2+2H→2HCI・-・・・・・・・・・・・
- (1) In this way, the initial state before the supply of Si2H6 is returned. By repeating this cycle, digital growth of one molecular layer per cycle is achieved.
第２図（ａ）及び（ｂ）は本発明の第２のＳｉのエピタ
キシアル成長方法の作用を説明するための模式図である
。また、供給ガスであるＳｉ２Ｈ６の代りにＳｉＨ４と
した場合は、第２図（ａ）に示すように、基板温度を３
００〜５００℃に保たれたＳｉ （１００）基板２にＳ
ｉ Ｈ４を供給すると、５ｉＨ４１４は、基板上で解
離し、５ｉＨ２１２とＨ２に分解される。このＳ ｉ
Ｈ２は、Ｓｉ （１００）基板２の表面に存在する未結
合手８と結合して１分子層である吸着５ｉＨ２９を形成
する。ここで、前述したように、基板温度が５００℃以
下であるので、ＳｉＨ２が１分子層を吸着した後、Ｈ原
子が表面から離脱しないので、２分子層目以降の吸着は
生じない。FIGS. 2(a) and 2(b) are schematic diagrams for explaining the operation of the second Si epitaxial growth method of the present invention. In addition, when SiH4 is used instead of Si2H6 as the supply gas, the substrate temperature is increased by 3.
S on the Si (100) substrate 2 kept at 00~500℃
When iH4 is supplied, 5iH414 dissociates on the substrate and decomposes into 5iH212 and H2. This Si
H2 combines with the dangling bonds 8 present on the surface of the Si (100) substrate 2 to form a single molecular layer of adsorbed 5iH29. Here, as described above, since the substrate temperature is 500° C. or less, H atoms do not leave the surface after adsorbing one molecular layer of SiH2, so adsorption of the second and subsequent molecular layers does not occur.
次に、第２図（ｂ）に示すように、残留するＳｉＨ４ガ
スを排除した後、Ｃｌ２７のガスを基板に供給すると、
ＣＩ□は表面のＨ原子と前述のく１）式で反応し、ＨＣ
Ｉ６となり、基板表面よりＨ原子を除去する。このよう
にして、Ｓ ｉ Ｈ４供給前の初期状態に戻る。Next, as shown in FIG. 2(b), after removing the remaining SiH4 gas, Cl27 gas is supplied to the substrate.
CI□ reacts with H atoms on the surface according to the above formula 1), and HC
becomes I6, and removes H atoms from the substrate surface. In this way, the initial state before S i H4 supply is returned.
次に、本発明の実施例について図面を参照して説明する
。Next, embodiments of the present invention will be described with reference to the drawings.
第３図は本発明のＳｉのエピタキシアル成長方法に使用
したエピタキシアル成長装置の概略を示す模式断面図で
ある。このエピタキシアル成長装置は、同図に示すよう
に、チャンバ５内は１Ｏ−８Ｐａの高真空に排気され、
基板加熱機＄１！１にＳｉ（］−００）基板２が装着さ
れている。また、成長ガスの供給は、第１ガスセル３及
び第２ガスセル４から行なわれる。FIG. 3 is a schematic cross-sectional view showing an outline of an epitaxial growth apparatus used in the Si epitaxial growth method of the present invention. As shown in the figure, in this epitaxial growth apparatus, the inside of the chamber 5 is evacuated to a high vacuum of 10-8 Pa,
A Si(]-00) substrate 2 is attached to a substrate heater $1!1. Further, the growth gas is supplied from the first gas cell 3 and the second gas cell 4.
ここで、Ｓｉ２Ｈ６によるシリコン層の成長について説
明する。まず、基板温度を２００〜５００℃にし、第１
ガスセル３によりＳｉ２Ｈ６ガスの供給量を１〜１０１
０５ｅで１０〜６０秒供給した。次に、Ｓｉ２Ｈ６ガス
の供給量を停止し、１０〜１２０秒間で残留しているＳ
ｉ２Ｈ６ガスを排気し、さらに、Ｃｌ２ガスを１０〜６
０秒間供給した。次に、残留ＣＩ２ガスを１０〜１２０
秒間排気した。Here, the growth of a silicon layer using Si2H6 will be explained. First, the substrate temperature is set to 200 to 500°C, and the first
The supply amount of Si2H6 gas is set from 1 to 101 by gas cell 3.
05e for 10-60 seconds. Next, the supply amount of Si2H6 gas is stopped, and the remaining S is removed for 10 to 120 seconds.
Exhaust the i2H6 gas and further evacuate the Cl2 gas to 10-6
It was supplied for 0 seconds. Next, reduce the residual CI2 gas to 10 to 120
Exhausted for seconds.
このようなサイクルを１サイクルとして、２００〜２０
００サイクル繰り返して得られたＳｉのエピタキシアル
成長層の膜厚を測定したところ、１サイクル当りの成長
膜厚が約０．１４ｎｍであった。このことは、前述した
ように、Ｓｉ （１００）面の１分子量と一致すること
が確認された。Such a cycle is considered as one cycle, and the number of cycles is 200 to 20.
When the film thickness of the Si epitaxially grown layer obtained by repeating 00 cycles was measured, the film thickness grown per cycle was about 0.14 nm. As mentioned above, this was confirmed to be consistent with the 1 molecular weight of the Si (100) plane.
次に、Ｓ ｉ Ｈ４によるＳｉ層の成長を説明する。Next, the growth of the Si layer using SiH4 will be explained.
まず、基板温度を３００〜５００℃にし、第１ガスセル
３によりＳ ｉ Ｈ４ガスの供給量を１〜１０１０５ｅ
で１０〜６０秒供給した。次に、ＳｉＨ４ガスの供給量
を停止し、１０〜１２０秒間で残留しているＳｉＨ４ガ
スを排気し、さらに、Ｃｌ□ガスを１０〜６０秒間供給
した。次に、残留ＣＩ２ガスを１０〜１２０秒間排気し
た。この場合も前述と同様の結果が得られた。First, the substrate temperature is set to 300 to 500°C, and the supply amount of Si H4 gas is set to 1 to 10105e by the first gas cell 3.
was supplied for 10 to 60 seconds. Next, the supply amount of SiH4 gas was stopped, the remaining SiH4 gas was exhausted for 10 to 120 seconds, and Cl□ gas was further supplied for 10 to 60 seconds. The residual CI2 gas was then evacuated for 10-120 seconds. In this case, the same results as above were obtained.
また、上述した実施例では、平板状の基板上にエピタキ
シアル層を成長しているが、例えば、表面に溝がある形
状の基板でも、原料ガスの吸着を利用したものであるか
ら、溝の底あるいは側壁でも一様の厚さの成長膜が得ら
れるという利点がある。In addition, in the above-mentioned embodiments, the epitaxial layer is grown on a flat substrate, but for example, even if the substrate has a groove on its surface, adsorption of the source gas is utilized, so the grooves can be grown on the substrate. There is an advantage that a grown film having a uniform thickness can be obtained even on the bottom or side walls.
以上説明したように本発明によれば、Ｓｉ基板への原料
の供給回数というデジタル量の制御によって、成長膜の
厚さを正確に制御できるととも再現性のある膜厚が得ら
れるＳｉのエピタキシアル成長方法が実現できる。この
ことはその効果が甚大である。As explained above, according to the present invention, the thickness of the grown film can be accurately controlled by digitally controlling the number of times the raw material is supplied to the Si substrate, and a reproducible film thickness can be obtained by Si epitaxy. Al growth method can be realized. The effect of this is enormous.
するための模式図、第３図は本発明のＳｉのエピタキシ
アル成長方法に使用したエピタキシアル成長装置の概略
を示す模式断面図である。FIG. 3 is a schematic sectional view schematically showing an epitaxial growth apparatus used in the Si epitaxial growth method of the present invention.
Claims (1)
シラン系ガスを供給し、Ｓｉ層を成長させるＳｉのエピ
タキシアル成長方法において、前記基板の温度を２００
〜５００℃に保つとともに前記シラン系ガスをＳｉ＿２
Ｈ＿６として、Ｃｌ＿２と交互に供給することを特徴と
するＳｉのエピタキシアル成長方法。 ２、前記基板の温度を３００〜５００℃に保ち、前記シ
ラン系ガスをＳｉＨ＿４として、Ｃｌ＿２と交互に供給
することを特徴とする請求項１記載のＳｉのエピタキシ
アル成長方法。[Claims] 1. Heating a Si (100) substrate with a (100) plane,
In a Si epitaxial growth method in which a silane-based gas is supplied to grow a Si layer, the temperature of the substrate is set to 200°C.
While maintaining the temperature at ~500°C, the silane gas is heated to Si_2
A method for epitaxial growth of Si, characterized in that H_6 is alternately supplied with Cl_2. 2. The Si epitaxial growth method according to claim 1, wherein the temperature of the substrate is maintained at 300 to 500°C, and the silane-based gas is SiH_4 and Cl_2 is supplied alternately.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10061190A JP2900497B2 (en) | 1990-04-17 | 1990-04-17 | Method for epitaxial growth of Si |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10061190A JP2900497B2 (en) | 1990-04-17 | 1990-04-17 | Method for epitaxial growth of Si |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH03297130A true JPH03297130A (en) | 1991-12-27 |
| JP2900497B2 JP2900497B2 (en) | 1999-06-02 |
Family
ID=14278643
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10061190A Expired - Fee Related JP2900497B2 (en) | 1990-04-17 | 1990-04-17 | Method for epitaxial growth of Si |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2900497B2 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6514803B1 (en) * | 1993-12-22 | 2003-02-04 | Tdk Corporation | Process for making an amorphous silicon thin film semiconductor device |
| JP2014127693A (en) * | 2012-12-27 | 2014-07-07 | Tokyo Electron Ltd | Formation method of seed layer, deposition method of silicon film and deposition film device |
-
1990
- 1990-04-17 JP JP10061190A patent/JP2900497B2/en not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6514803B1 (en) * | 1993-12-22 | 2003-02-04 | Tdk Corporation | Process for making an amorphous silicon thin film semiconductor device |
| JP2014127693A (en) * | 2012-12-27 | 2014-07-07 | Tokyo Electron Ltd | Formation method of seed layer, deposition method of silicon film and deposition film device |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2900497B2 (en) | 1999-06-02 |
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