JPH03294488A - Ion etching device - Google Patents

Abstract

PURPOSE:To easily remove a built-up layer in a chamber by covering the inner face of a cylindrical body in a chamber with a sticking-proof plate and covering the side plate in the rear part of a sample with a protection plate and coating both the sticking-proof plate and the protection plate respectively with an organic material layer having durability for etching. CONSTITUTION:A sample 3 to be etched and an ionic gun 4 are held in a chamber 2. A cylindrical body 6 is provided in the opposite direction of the sample 3 and the ionic gun 4. The end faces thereof are closed by a pair of side plates 7, 8. Further the inner face of the cylindrical body 6 is covered with a sticking- proof plate 10 and the inner face of the side plate 8 in the rear part from the sample 3 is covered with a protection plate 22 respectively. The inner faces of these sticking-proof-plate 10 and protection plate 22 are coated with the organic material layers 23, 24 (i.e., polyimide) having durability for ionic etching. In this constitution, when ionic etching is performed for the sample 3, argon ions collide against the organic material layers 23, 24 and are absorbed to these layers 23, 24 and easily removed. The built-up layer 14 in the chamber 2 is easily removed.

Description

[Detailed Description of the Invention] [Summary] Regarding an ion etching device that accelerates argon ions and irradiates the etching sample to remove unnecessary parts of the sample, the present invention prevents unnecessary particles from adhering to the sample and prevents deposition in the chamber. In order to facilitate the removal of the layer, an etching sample and an ion gun are housed, and a cylindrical body and a pair of side plates that close the end faces of the cylindrical body are provided in the direction opposite to the sample and the ion gun. The chamber is provided with an adhesion prevention plate that covers the inner surface of the cylindrical body, and a protection plate that covers the inner surface of the side plate behind the sample, and the adhesion prevention plate and the inner surface of the protection plate are provided with ions. The chamber is characterized by being coated with an organic material layer having resistance to etching, or the chamber is provided with the adhesion prevention plate, and the inner surface of the adhesion prevention plate and the inner surface of the side plate behind the sample. The organic material layer is formed by depositing the organic material layer, and further, the organic material layer is formed by partially using a first organic material layer and a second organic material layer. , the first layer is applied to at least a portion where the deposited layer is easily deposited by etching the sample and a portion where some of the accelerated argon ions collide.
The second organic material layer, which is poorly soluble in the solvent of the first organic material layer, is deposited on the remaining portions.

[Industrial application field]

The present invention relates to an ion etching apparatus that irradiates a sample with accelerated argon ions to remove an exposed portion of the sample.

As the density of electronic components increases, high-precision etching technology is required. Ion etching technology, in which a sample is irradiated with accelerated argon ions, is already used as a method for high-precision processing of fine patterns.

[Conventional technology]

FIG. 5 is a schematic diagram of the main parts of a conventional ion etching apparatus, and FIG. 6 is an explanatory diagram of accelerated argon ions in the apparatus shown in FIG.

In FIG. 5, an ion etching apparatus 1 stores an etching sample 3, for example, a wafer 3 with a resist pattern formed on its surface, in a vacuum chamber 2, and irradiates the sample 3 with accelerated argon ions 5 emitted from an ion gun 4. , the exposed portion of sample 3 is etched (milled). The resist pattern formed on Sample 3 is generally removed using oxygen plasma.

After creating a high vacuum with a vacuum pump, e.g.
The chamber 2 into which argon gas is introduced at about 10-' Torr is a cylindrical body 6 having an argon gas introduction pipe 11 and an exhaust pipe 12. A side plate 7 to which the ion gun 4 is attached and which closes the right end of the cylindrical body 6. The sample holder 9 is attached to a side plate 8 that closes the left end of the cylindrical body 6, and the inside of the cylindrical body 6, which is cylindrical in the direction facing the sample 3 and the ion gun 4, contains particles scattered from the sample 3 due to etching. The adhesion prevention plate 10 is provided so that the adhesion prevention plate 13 does not adhere to the cylindrical body 6.

In general, the side plates 7 and 8 that require mechanical strength, and the adhesion prevention plate 1 that requires cleaning and removal of the deposited layer 14 of particles 13.
0 is made of metal such as stainless steel or aluminum, and the cylindrical body 6 that airtightly connects the side plates 7 and 8 is also made of metal such as stainless steel or aluminum.

Sample holder 9 attached to side plate 8 by support member 17
A plurality of etching samples 3 are fixed on each of the right and left surfaces, and can be rotated by external operation.

Such rotation sequentially etches the sample 3 fixed on the right side and the sample 3 fixed on the left side of the holder 9, and tilts the sample 3 at an appropriate angle as shown by the broken line in the figure to inject accelerated argon ions 5 from an oblique direction. Used when irradiating.

When the sample 3 is irradiated with accelerated argon ions 5, the argon ions 5 collide with the resist pattern and the exposed portion of the sample 3, and the particles 13 scattered by the collision are transferred to the adhesion prevention plate 10.
to form a deposited layer 14.

In such an ion etching apparatus l, an ion gun 4
As shown in FIG. 6, the argon ions 5 that are emitted and accelerated go straight and collide with the opposing sample 3, and a part of them 5a hits the deposition prevention plate 10, and another part 5b hits the holder 9.
passes by and collides with the side plate 8.

[Problem to be solved by the invention]

In the conventional ion etching apparatus 1, the argon ions 5a that collided with the deposition prevention plate 10 etched the deposition prevention plate 10, and the particles 15 scattered from the deposition prevention plate 10 adhered to the sample 3 and also collided with the side plate 8. The argon ions 5b etch the side plate 8, and the particles 16 scattered from the side plate 8 adhere to the sample 3 fixed on the left side of the holder 9. the result,
Etching particles 15.1 were included in the resist pattern of sample 3.
There was a problem in that particles 16 were attached to the etched sample, making it difficult to remove the resist pattern.

Further, the deposited layer 14 of the metal adhesion prevention plate 10 is difficult to remove, and the deposited layer 14 has become too thick. A part of the deposited layer 14 deposited on the deposited layer 14 that was left behind peels off, and the holder 9 is tilted to remove the sample 3 being etched.
There was a problem in that the peeled pieces could adhere to the surface of the surface.

[Means to solve the problem]

The ion etching apparatus of the present invention aimed at eliminating the above-mentioned problems, as shown in FIG. 1 showing an embodiment thereof, houses an etching sample 3 and an ion gun 4. Cylindrical body 6 and cylindrical body 6
The chamber 2 includes a pair of side plates 7.8 that close the end faces of the chamber 2. The chamber 2 includes a pair of side plates 10.8 that cover the inner surface of the cylindrical body 6. A protection plate 22 is provided to cover the inner surface of the side plate 8 behind the sample 3, and organic material layers 23 and 24 having resistance to ion etching are adhered to the inner surfaces of the adhesion prevention plate 10 and the protection plate 22. According to FIG. 2 showing another embodiment of the present invention, an etching sample 3 and an ion gun 4 are accommodated, and a cylindrical body 6 and a cylindrical body are arranged in the opposite direction of the sample 3 and the ion gun 4. The chamber 2 includes a pair of side plates 7.8 that close the end faces of the cylindrical body 6, and is provided with an anti-adhesion plate 10 that covers the inner surface of the cylindrical body 6. The inner surface of the side plate 8 is characterized by having organic material layers 23 and 24 adhered thereto.

[Effect]

According to the above means, an organic material layer is provided on the surface in the chamber where some of the accelerated argon ions that do not go straight toward the sample collide, and on the surface in the chamber where the deposited layer is deposited by particles scattered from the sample. Metal particles do not scatter from the chamber, and the deposited layer, which is porous and permeable to organic solvents, can be easily removed by dissolving the organic material layer.

Therefore, the resist pattern formed on the sample can be easily and reliably removed by using oxygen plasma, etc., which improves productivity, prevents particles from the chamber from adhering to the etched sample, and removes the deposited layer. It is now possible to remove it more frequently and reliably than before, and it is possible to eliminate defective products caused by peeled off pieces.

〔Example〕

Embodiments of the ion etching apparatus according to the present invention will be described below with reference to the drawings.

FIG. 1 is a schematic diagram of a main part of an ion etching apparatus according to a first embodiment of the present invention, FIG. 2 is a schematic diagram of a main part of an ion etching apparatus according to a second embodiment of the present invention, and FIG. FIG. 4 is an enlarged sectional view of a deposited layer deposited on an organic material layer according to the present invention.

In FIG. 1, in which the same reference numerals are used for parts common to those in the previous figure, an ion etching apparatus 21 includes an etching sample 3. Ion gun 4. Sample holder9. Anti-adhesion plate 10
．． A protection plate 22 is housed therein.

The same resist pattern (
The protective plate 22 is made of metal such as stainless steel, and has an organic material layer 23 on the inner surface of the side plate 8 rearward from the sample 3, and is made of metal such as stainless steel. An organic material layer 24 using an organic material is deposited.

In the ion etching device 21 configured as described above, a portion 5a of the argon ions 5 collides with the organic material layer 23, a portion 5b of the argon ions 5 collides with the organic material layer 24, and the deposited layer 14 collides with the organic material layer 23. 23.

Therefore, the argon ions 5a and 5b collided with the organic material layers 23.24 are absorbed by the organic material layers 23.24, and the conventional metal scattering particles 15.16 are not generated, and the particles 13 are aggregated. The porous deposited layer 14 is formed by irradiation with oxygen plasma or by irradiating the organic material layer 23 as shown in FIG.
24 (for example, acetone) penetrates into the deposited layer 14 and dissolves the organic material layer 23, so that the organic material layer 23 can be easily removed.

In FIG. 2, in which the same reference numerals are used for parts common to those in the previous figure, an ion etching apparatus 31 includes an etching sample 3. Ion gun 4. Sample holder9. Anti-adhesion plate 10
to accommodate.

The same resist pattern as that formed on sample 3 is applied to the inner surface of the adhesion prevention plate 10 made of metal such as stainless steel
On the inner surface of the side plate 8 rearward from the sample 3, an organic material layer 24 made of the same organic material as the organic material layer 23 is deposited.

In the ion etching device 31 configured in this way, a portion of the argon ions 5a collide with the organic material layer 23,
A portion 5b of the argon ions 5 collides with the organic material layer 24,
The deposited layer 14 is formed on the organic material layer 23.

In the ion etching device 31 configured in this way, the argon ions 5a collided with the organic material layers 23 and 24,
5b is absorbed by the organic material layer 23, 24, and the conventional metal scattering particles 15, 16 are not generated. As shown in FIG. 4, a solution (for example, acetone) for the organic material layers 23 and 24 penetrates into the deposited layer 14 and dissolves the organic material layer 23, so that it can be easily removed.

In FIG. 3, in which the same reference numerals are used for parts common to those in the previous figure, an ion etching apparatus 41 includes an etching sample 3. Ion gun 4. The adhesion prevention plate 10 and the protection plate 22 are housed therein.

A part of the inner surface of the adhesion prevention plate 10 made of metal such as stainless steel,
That is, the organic material layer 23 using the same resist (organic material) as the resist pattern formed on the sample 3 is deposited on the portions where the argon ions 5a collide and are easily consumed and where the deposited layer 14 is deposited. , organic material layer 23 in other parts
When the organic material layer 42 that is not dissolved in the solution, for example, the organic material layer 23, is dissolved in acetone, an organic material layer 42 made of an organic material (for example, polyimide) that is difficult to be dissolved by acetone is deposited.

The protective plate 22 that covers the side plate 8 behind the sample 3 is
An organic material layer 24 using the same resist as the resist pattern is applied to the portions where the argon ions 5b collide and are easily consumed, and the other portions are covered with an organic material layer 43 made of the same organic material as the organic material layer 42. wear it.

In the ion etching apparatus 41 configured in this way, the deposited layer 14 is deposited and the argon ions 5a,
The organic material layers 23 and 24 that are consumed by the collision with the organic material layers 5b can be removed and regenerated, leaving behind the organic material layers 42 and 43.

(Effects of the Invention) As explained above, the surface in the chamber where some of the accelerated argon ions that do not go straight toward the sample collides,
According to the above-mentioned means of providing an organic material layer on the surface inside the chamber where the deposited layer is deposited by particles scattered from the sample, the resist pattern formed on the sample can be easily and reliably removed by using oxygen plasma or the like. This improves productivity, prevents particles from the chamber from adhering to the etched sample, and allows the deposited layer to be removed more frequently and reliably than before, eliminating defective products due to peeled off pieces. Can be done.

[Brief explanation of drawings]

FIG. 1 is a schematic diagram of a main part of an ion etching apparatus according to a first embodiment of the present invention, FIG. 2 is a schematic diagram of a main part of an ion etching apparatus according to a second embodiment of the present invention, and FIG. 4 is an enlarged sectional view of the deposited layer deposited on the organic material layer; FIG. 5 is a schematic diagram of the main part of the conventional ion etching apparatus; Figure 6 is an explanatory diagram of accelerated argon ions. In the figure, 2 is the chamber 3 for the etching sample, 4 is the ion gun, 5 is the accelerated argon ion, 5a and 5b are parts of the argon ion, 6 is the cylindrical body of the chamber, 7.8 is the side plate of the chamber, and 10 is the side plate of the chamber. Deposition prevention plate, 14 is a deposited layer, 21.31.41 is an ion etching device, 22 is a protection plate, 23.24 and 42.43 are organic material layers. 4E Ionoev + Zono-kema - 1 Graph / ° Heron / 2 Equipment hand / lad dark map 3 Figure L Tsunan 2゛Okihira egg force o! ! L side map No. 2 Figure 4 Laminated layers with 4 skin leaks in the skin material layer /) Mineral cross section No. 4
m

Claims (3)

[Claims] (1) Accommodates an etching sample (3) and an ion gun (4), and a cylindrical body (6) and a cylindrical body (6) in a direction opposite to the sample (3) and the ion gun (4). ), the chamber (2) includes a pair of side plates (7, 8) that close the end faces of the cylindrical body (6), an anti-adhesion plate (10) that covers the inner surface of the cylindrical body (6), and a side plate (10) that covers the inner surface of the cylindrical body (6). A protective plate (2) covering the inner surface of the side plate (8)
2), and organic material layers (23, 24) having resistance to ion etching are provided on the inner surfaces of the adhesion prevention plate (10) and the protection plate (22).
, 42, 43). (2) The chamber (2) is provided with the adhesion prevention plate (10), and the inner surface of the adhesion prevention plate (10) and the inner surface of the side plate (8) rearward from the sample (3) are provided with the material. Equipment layer (23, 24
, 42, 43). (3) The organic material layer is formed by partially using the first organic material layer (23, 24) and the second organic material layer (42, 43), and at least the etching of the sample (3) Sedimentary layer (
14) which is easily deposited and accelerated argon ions (
The first organic material layer (23, 24) is applied to the portion where the parts (5a, 5b) of 5) collide, and the first organic material layer (23, 24) is applied to the other portion. 3. The ion etching apparatus according to claim 1, wherein said second organic material layer (42, 43) which is sparingly soluble in a solvent is deposited thereon.