JPH03293924A - Short-circuit protective device for power circuit - Google Patents

Short-circuit protective device for power circuit

Info

Publication number
JPH03293924A
JPH03293924A JP9570190A JP9570190A JPH03293924A JP H03293924 A JPH03293924 A JP H03293924A JP 9570190 A JP9570190 A JP 9570190A JP 9570190 A JP9570190 A JP 9570190A JP H03293924 A JPH03293924 A JP H03293924A
Authority
JP
Japan
Prior art keywords
transistor
circuit
short
output
resistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9570190A
Other languages
Japanese (ja)
Inventor
Akihiro Tsukuda
佃 昭弘
Katsuhiko Higashiyama
勝比古 東山
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP9570190A priority Critical patent/JPH03293924A/en
Publication of JPH03293924A publication Critical patent/JPH03293924A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To speed up the operation of short-circuit protection by increasing the resistance value of a resistor of a pattern shape by the heat generation of an output transistor at the time of a short circuit, lowering the VBE of a detecting transistor in a control IC and improving the sensitibity of the detection of overcurrents. CONSTITUTION:When the output voltage of an output voltage section V01 is short-circuited, large currents are made to flow through an output transistor Q1 to generate heat, and the resistance value of a detecting resistor R10 formed near the output transistor Q1 is increased. Likewise, the VBE of a detecting transistor Q4 incorporated into an IC1 is lowered by the heat generation, the detecting transistor Q4 is turned ON, and a control circuit S is operated and the base of the output transistor Q1 is turned OFF. Accordingly, the protection of the short circuit of a power circuit can be realized while moving an operating point in response to the extent of heat generation.

Description

【発明の詳細な説明】 産業上の利用分野 本発明は電源回路等に適用して有効な出カシヨード保護
装置に関する。
DETAILED DESCRIPTION OF THE INVENTION Field of the Invention The present invention relates to an output iodine protection device that is effective when applied to power supply circuits and the like.

従来の技術 近年、電源部の出カシ目−ト保護装置としてヒユーズに
替わり半導体回路構成を用いたものが増加している。以
下図面を参照しながら、上述した従来の電源回路ショー
ト保護装置の一例について説明する。
2. Description of the Related Art In recent years, there has been an increase in the use of semiconductor circuit structures in place of fuses as output gate protection devices for power supply units. An example of the above-mentioned conventional power supply circuit short protection device will be described below with reference to the drawings.

第3図は従来のショート保護装置の回路図を示すもので
ある。第3図において、1は入力DC電圧端子、2は出
力DC電圧端子、3は出力用パワトランジスタ、4はシ
ョート検出用抵抗、6はショート検出用トランジスタ、
6は安定化DC電源用の制御回路である。この構成では
出力DC電圧を安定化するため出力用パワートランジス
タ3と制御回路6で一定電圧電源を得るよう動作させて
いる。
FIG. 3 shows a circuit diagram of a conventional short protection device. In FIG. 3, 1 is an input DC voltage terminal, 2 is an output DC voltage terminal, 3 is an output power transistor, 4 is a short-circuit detection resistor, 6 is a short-circuit detection transistor,
6 is a control circuit for the stabilized DC power supply. In this configuration, in order to stabilize the output DC voltage, the output power transistor 3 and the control circuit 6 are operated to obtain a constant voltage power source.

以上のように構成された従来のシラー)ffl護回路に
ついて、以下その動作について説明する。まず出力DC
電圧(端子2の電圧)が何らかの原因、例えば負荷側シ
ョートでショートを起こすと、出力用パワートランジス
タ3を通して大電流が流れる。その時、ショート検出用
抵抗4の両端電圧が、ショート検出用トランジスタ6の
vBE を越えるとトランジスタがオンし、制御回路6
に電圧が加わり出力用パワートランジスタ3のベースを
カット・オフし、保護回路動作を行なう。
The operation of the conventional Schiller (FFL) protection circuit configured as described above will be described below. First, the output DC
If the voltage (voltage at terminal 2) is short-circuited for some reason, for example due to a short-circuit on the load side, a large current flows through the output power transistor 3. At that time, when the voltage across the short detection resistor 4 exceeds vBE of the short detection transistor 6, the transistor turns on and the control circuit 6
A voltage is applied to the output power transistor 3, which cuts off the base of the output power transistor 3 and operates as a protection circuit.

発明が解決しようとする課題 第3図の回路をディスクリートで構成する場合と、モノ
リシックICで構成する場合(例えば3端子電源レギユ
レーター)がある。従来の構成のものはショート時の電
流増加により、ショート検出用抵抗4の両端の電圧降下
を利用し、ショート検出用トランジスタ5のvBE を
オンし、出力用パワートランジスタをオフしてシゴーH
C!!ヲ行なう。
Problems to be Solved by the Invention There are cases in which the circuit shown in FIG. 3 is constructed as a discrete circuit, and cases in which it is constructed in a monolithic IC (for example, a three-terminal power supply regulator). The conventional configuration uses the voltage drop across the short-circuit detection resistor 4 to turn on the vBE of the short-circuit detection transistor 5 and turn off the output power transistor due to the increase in current at the time of a short circuit.
C! ! Let's go.

ディスクリートで構成する場合プリント基板上に部品を
組むため、熱伝導が悪く出力用パワートランジスタの発
熱が固定抵抗値の増加や、一方検出用トラシジスタの発
熱によるvBE の低下に影響せず、出力用パワートラ
ンジスタのショートによる発熱をショート保護に積極的
に利用できない。
In the case of a discrete configuration, since the components are assembled on a printed circuit board, heat conduction is poor, and the heat generated by the output power transistor does not increase the fixed resistance value, nor does it affect the decrease in vBE due to the heat generated by the detection transistor. Heat generated by short-circuiting of transistors cannot be actively used for short-circuit protection.

又1、モノリシックICでは検出用抵抗の許容消費電力
は大きくとれず、発熱による抵抗分増加は利用できない
。したがってショート保護回路の動作点直前の半ショー
ト状態における電流増加に対−トランジスタの放熱板を
大きくする必要があり、一方モノリシックICでは熱保
護回路を別途設ける回路構成が必要であった。
Furthermore, in a monolithic IC, the permissible power consumption of the detection resistor cannot be increased, and the increase in resistance due to heat generation cannot be utilized. Therefore, it is necessary to increase the size of the heat dissipation plate of the transistor to accommodate the increase in current in the half-short state immediately before the operating point of the short circuit protection circuit, and on the other hand, in a monolithic IC, a circuit configuration in which a thermal protection circuit is separately provided is required.

本発明は上記課題に鑑み、金属基板上のハイブリッドI
Cのパターン抵抗により、抵抗の許容消費電力を大きく
シ、特定の部品なしにショート時の出力トランジスタの
発熱を利用することにより、パターン抵抗値の増加とシ
ョート検出用トランジスタのvBEの低下で、ショート
保護動作を早める電源回路のショートi護装置を提供し
ようとするものである。
In view of the above problems, the present invention provides hybrid I on a metal substrate.
By using the C pattern resistance, the allowable power consumption of the resistor can be increased, and by utilizing the heat generated by the output transistor at the time of a short circuit without using any specific parts, the pattern resistance value increases and the vBE of the short detection transistor decreases, resulting in a short circuit. The present invention aims to provide a short-circuit protection device for a power supply circuit that speeds up the protection operation.

課題を解決するための手段 上記の課題を解決するために本発明は、良好な熱伝導特
性を備えた金属基板上に、出力トランジスタと、これを
制御する制御ICと、主電流に直列に入るパターン形状
の抵抗を互いに近接して設け、出力トランジスタのショ
ート時の発熱が前記る。
Means for Solving the Problems In order to solve the above problems, the present invention provides an output transistor, a control IC for controlling the output transistor, and a control IC connected to the main current in series on a metal substrate having good thermal conductivity. As described above, patterned resistors are provided close to each other, and heat is generated when the output transistor is short-circuited.

作  用 本発明は上記した構成によって、ショート時の出力トラ
ンジスタの発熱によりパターン形状の抵抗の抵抗値が増
加し、また制御IC中の検出トランジスタのvBEが低
下し、過電流検出感度が向上しこれにより出力電流の遮
断(ショート保護動作)期 が早鵬に達成できるものである。
According to the above-described configuration, the resistance value of the patterned resistor increases due to the heat generated by the output transistor when short-circuited, and the vBE of the detection transistor in the control IC decreases, improving the overcurrent detection sensitivity. This allows the output current to be cut off (short-circuit protection operation) quickly.

実施例 以下本発明の一実施例のショート保護装置について図面
を参照しながら説明する。
EXAMPLE Hereinafter, a short circuit protection device according to an example of the present invention will be described with reference to the drawings.

第1図は本発明の第1の実施例におけるショート保護装
置の金属基板上の構成図、第2図はそれを含めた電源安
定化回路の回路図である。v工N1とv工N2 はそれ
ぞれ第1.第2の入力電圧部、vol、■o2.v03
 はそれぞれ出力電圧部、Ql。
FIG. 1 is a block diagram of a short protection device on a metal substrate according to a first embodiment of the present invention, and FIG. 2 is a circuit diagram of a power supply stabilizing circuit including the same. v-work N1 and v-work N2 are the first. Second input voltage section, vol, ■o2. v03
are the output voltage section and Ql, respectively.

Q2.Q3はそれぞれ出力トランジスタ、R1゜。Q2. Q3 is an output transistor, R1°.

R11,はそれぞれショート検出用の検出抵抗、Q4゜
Q5は検出トランジスタでは工C1の中に組み込まれて
いる。本実施例は2入力端子、3出力電圧の場合のもの
である。
R11 and Q5 are detection resistors for short-circuit detection, respectively, and detection transistors Q4 and Q5 are incorporated in the circuit C1. This embodiment is for the case of two input terminals and three output voltages.

金属基板上で、出力トランジスタQ1の近くに、一端が
出力トランジスタQ1 のエミッタに接続された銅ハク
抵抗で形成された検出抵抗R1゜を設け、さらにその近
くに検出トランジスタQ4が組み込まれたIC1が設け
られている。前記検出抵抗R1oの両端は工C1のピン
2,3を介して検出トランジスタQ4のエミック、ベー
スにソレソれ接続されている。また同様に金属板上の出
力トランジスタQ2の近くに、一端が出力トランジスタ
Q2のコレクタに接続された銅ハク抵抗で形成された検
出抵抗Rを設ける。この検出抵抗R111 の両端は同IC1のピン9,1oを介して検出トランジ
スタQ6のエミッタ、ベースにそれぞれ接続されている
。なお、検出抵抗R1゜、R11は第1図中ではハツチ
ングを付して示しである。また、銅ハク抵抗の温度係数
は+4400PPM/℃、検出トランジスタ04,05
のvBE  の温度係数は一2m V2Cである。
On the metal substrate, near the output transistor Q1, a detection resistor R1° formed of a copper foil resistor is provided, one end of which is connected to the emitter of the output transistor Q1. It is provided. Both ends of the detection resistor R1o are connected to the emic and base of the detection transistor Q4 through pins 2 and 3 of the circuit C1. Similarly, a detection resistor R formed of a copper foil resistor whose one end is connected to the collector of the output transistor Q2 is provided near the output transistor Q2 on the metal plate. Both ends of the detection resistor R111 are connected to the emitter and base of the detection transistor Q6 via pins 9 and 1o of the IC1, respectively. Note that the detection resistors R1° and R11 are shown with hatching in FIG. In addition, the temperature coefficient of the copper foil resistance is +4400 PPM/℃, and the detection transistor 04,05
The temperature coefficient of vBE is -2mV2C.

上記の構成におけるショート時の保護動作について説明
する。出力電圧部V。1の出方電圧がショートすると出
力トランジスタQ、に大電流が流れて発熱し、その近く
に形成された検出抵抗R4゜(0,20)の抵抗値が増
加し、同様にその発熱によってIC1内に組み込まれた
検出トランジスタQ4のvBE が低下し、この検出ト
ランジスタQ4がONとなり制御回路Sが働らいて出方
トランジスタQ1のベースをOFFとするものである。
The protection operation in the case of a short circuit in the above configuration will be explained. Output voltage section V. When the output voltage of 1 is short-circuited, a large current flows through the output transistor Q, generating heat, and the resistance value of the detection resistor R4゜(0,20) formed near it increases. The vBE of the detection transistor Q4 incorporated in the output transistor Q4 decreases, the detection transistor Q4 is turned on, and the control circuit S is activated to turn off the base of the output transistor Q1.

出力トランジスタQ2.Q3の出力がショートした時の
検出抵抗R、検出トランジスタQ6の動作モ1 部に絶縁層を配して部品を配置するハイブリッド構造に
おいて出力トランジスタの近くに銅ハク抵抗によるショ
ート検出用の抵抗を設け、かつ検出トランジスタが入っ
たICも近くに配設し、出力がシロートシた時の出力ト
ランジスタの発熱が容易に伝わるように構成したことに
より、検出抵抗の温度上昇による抵抗値増加と検出用ト
ランジスタのvBE の低下を利用して電源回路のショ
ート保護を発熱の程度に応じて動作点を移動させながら
実現できる。したがって、単に完全なショートのみなら
ず、シ冒−トに近い過大な負荷状態が続く場合にも最適
に保護動作が可能である。
Output transistor Q2. The operation of the detection resistor R and the detection transistor Q6 when the output of Q3 is short-circuited.1 In a hybrid structure in which components are arranged with an insulating layer on the output transistor, a short-circuit detection resistor is provided near the output transistor using a copper foil resistor. , and the IC containing the detection transistor is placed nearby, so that the heat generated by the output transistor when the output is low is easily transmitted, thereby reducing the increase in resistance value due to temperature rise of the detection resistor and the increase in the detection transistor. Utilizing the decrease in vBE, short-circuit protection of the power supply circuit can be realized while moving the operating point according to the degree of heat generation. Therefore, optimal protective operation is possible not only when a complete short circuit occurs but also when an excessively loaded state close to a fault continues.

発明の効果 以上のように本発明は金属基板上に互いに近接して出力
トランジスタ、その制御用の制御IC1主電流に直列に
入れたパターン形状の抵抗を設けたもので、抵抗値の設
定が容易で、出力トランジスタの発熱による温度上昇を
利用して前記抵抗の抵抗値の上昇及び制御IC中の検出
トランジスタのvBE の低下による過電流検出感度向
上を実現することができ、簡素な構成で確実なショート
保護を行なうことができる。
Effects of the Invention As described above, the present invention provides pattern-shaped resistors placed close to each other on a metal substrate and connected in series with the main current of the output transistor and the control IC 1 for controlling the output transistor, making it easy to set the resistance value. Therefore, it is possible to improve the overcurrent detection sensitivity by increasing the resistance value of the resistor and decreasing the vBE of the detection transistor in the control IC by using the temperature rise due to heat generation of the output transistor, and it is possible to improve the overcurrent detection sensitivity with a simple configuration. Can provide short circuit protection.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本発明の一実施例における電源回路のショート
保護装置の金属基板上の部品配置図、第2図は本実施例
の要部の回路図、第3図は従来の電源回路のショート保
護装置の回路図である。 Q  、Q  O四−出力トランジスタ、Q4.Q51
  21 3 ・・・・・・検出トランジスタ、R1゜、R,,1・・
・用抗抗。
Fig. 1 is a component layout diagram on a metal substrate of a short-circuit protection device for a power supply circuit according to an embodiment of the present invention, Fig. 2 is a circuit diagram of main parts of this embodiment, and Fig. 3 is a conventional short-circuit protection device for a power supply circuit. It is a circuit diagram of a protection device. Q, Q O4-output transistor, Q4. Q51
21 3...Detection transistor, R1゜, R,,1...
・For anti-resistance.

Claims (1)

【特許請求の範囲】[Claims] 金属基板上に出力トランジスタと、前記出力トランジス
タを制御して一定電圧を得る制御ICを近接して設け、
その金属基板上で前記出力トランジスタの制御ICに近
接してパターン形状の抵抗を設け、この抵抗を主電流に
直列に入るように接続するとともにこの抵抗の両端を前
記制御ICの中の検出トランジスタに接続しこの抵抗を
流れる電流量により過電流を検出する構成とし、前記出
力トランジスタに過電流が流れた時に発生する熱により
、同一金属基板上で近傍にある前記抵抗および前記制御
IC中の検出トランジスタの温度を上昇させ、抵抗値の
上昇と上記トランジスタのV_B_Eの低下により過電
流検出感度を上げ早期に出力電流を遮断する構成とした
ことを特徴とする電源回路のショート保護装置。
An output transistor and a control IC for controlling the output transistor to obtain a constant voltage are provided close to each other on a metal substrate,
A pattern-shaped resistor is provided on the metal substrate close to the control IC of the output transistor, and this resistor is connected in series with the main current, and both ends of this resistor are connected to the detection transistor in the control IC. The overcurrent is detected by the amount of current flowing through the connected resistor, and the heat generated when an overcurrent flows through the output transistor causes the resistor and the detection transistor in the control IC that are nearby on the same metal substrate to be detected. 1. A short-circuit protection device for a power supply circuit, characterized in that the temperature is increased, the resistance value is increased, and the V_B_E of the transistor is decreased, thereby increasing overcurrent detection sensitivity and cutting off the output current at an early stage.
JP9570190A 1990-04-10 1990-04-10 Short-circuit protective device for power circuit Pending JPH03293924A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9570190A JPH03293924A (en) 1990-04-10 1990-04-10 Short-circuit protective device for power circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9570190A JPH03293924A (en) 1990-04-10 1990-04-10 Short-circuit protective device for power circuit

Publications (1)

Publication Number Publication Date
JPH03293924A true JPH03293924A (en) 1991-12-25

Family

ID=14144808

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9570190A Pending JPH03293924A (en) 1990-04-10 1990-04-10 Short-circuit protective device for power circuit

Country Status (1)

Country Link
JP (1) JPH03293924A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10336876A (en) * 1997-06-02 1998-12-18 Semiconductor Res Found Current breaker
US7233469B2 (en) 2001-04-24 2007-06-19 Vlt, Inc. Components having actively controlled circuit elements
JP2008067489A (en) * 2006-09-07 2008-03-21 Toa Corp Overcurrent protection circuit

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10336876A (en) * 1997-06-02 1998-12-18 Semiconductor Res Found Current breaker
US7233469B2 (en) 2001-04-24 2007-06-19 Vlt, Inc. Components having actively controlled circuit elements
JP2008067489A (en) * 2006-09-07 2008-03-21 Toa Corp Overcurrent protection circuit

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