JPH03292004A - Monolithic microwave integrated circuit element - Google Patents

Abstract

PURPOSE:To select a different frequency properly and to facilitate the trimming when the matching of the matching circuit is deviated from the design value by forming an input output wire bonding to an optional point on a strip line. CONSTITUTION:A strip line (through-line 2) whose one end is connected to an active element (HEMT1) and whose other end is connected to ground via a capacitor 4 is formed on a semiconductor substrate (GaAs substrate 11), the active element (HEMT1) and the capacitor 4 are connected by the strip line to form an input output matching circuit and an input wire bonding part 12 and an output wire bonding part 13 are formed to an optional point on the strip line (through-line 2). A signal through the input wire 5 is matched wire the impedance of the HEMT1 by the through-line 2 being a distributed constant circuit and a short tab 3 and propagate to the gate electrode and amplified. Then an output side distributed constant circuit is matched with the output impedance of the HEMT1 and an RF signal is extracted via an output wire 6.

Description

DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to improvements in monolithic microwave integrated circuit elements that can be used for microwave amplification and the like.

[Prior art] Microwaves have a ripple effect of 3 mm to 30 cm (frequency of approximately 1 to 30 cm).
100 gigahertz), and is used for satellite broadcasting communications,
It is used for telephone line communication, Doppler radar, etc.

In recent years, monolithic microwave integrated circuit devices have become widely used as devices in the microwave region from the viewpoints of reliability, economy, small size, and light weight (Tetsuji Imai et al., “Compound Semiconductor Devices ■”, (Showa (January 10, 1960) Kogyo Kenkyukai, p. 33). Monolithic microwave integrated circuit elements are used, for example, in military applications such as rockets and missiles, and in civilian applications such as converters for satellite broadcasting.

Hereinafter, the above-mentioned conventional microwave integrated circuit device will be explained with reference to the drawings.

FIG. 2 is a schematic diagram of a conventional microwave integrated circuit device.

In the figure, 1 is an active element HEMT (High Electron Mobility Transistor), 2 is a through line, 3 is a short stub, 4 is a capacitance, 5 is an input wire, 6 is an output wire 7 is an RF (Radio Frequency Transistor) ) input pad, 8 is RF output pad, 9 is gate bias pad, 10 is drain bias pad,
11 is a GaAs (gallium arsenide) substrate.

The operation of the microwave integrated circuit element configured as above will be explained below.

Bias charges are applied to gate bias pad 9 and drain bias pad 10 from the outside. R
It is matched to the impedance of the HEMTI by the through line 2 and the short stub 3, which are RF multiplied signal distribution constant circuits that enter from the F person pad 7, and are propagated to the gate electrode and amplified.

Then, the output side distributed constant circuit matches the output impedance of the HEMTI, and the RF multiplied signal is extracted from the RF output pad 8.

[Problems to be Solved by the Invention] However, in the above configuration, there is a problem that the frequencies that can be used are fixed, and it is not possible to appropriately select different frequencies.

This poses the problem that a new circuit pattern must be generated when used at a different frequency, which increases development time and costs. Also,
There is also the problem that trimming cannot be performed if the matching of the matching circuit deviates from the design.

In order to solve the problems of the prior art described above, the present invention allows input and output wire bonds on the same element to be placed at arbitrary positions in the input/output matching circuit, thereby allowing different frequencies to be arbitrarily selected and used, and matching An object of the present invention is to provide a monolithic microwave integrated circuit element that can be easily trimmed when the circuit matching deviates from the design.

[Means for Solving the Problems] In order to achieve the above object, the monolithic microwave integrated circuit device of the present invention is constructed on the same semiconductor substrate, one end is an active element, the other end is grounded through a capacitance, A monolithic microwave integrated circuit element that connects the active element and capacitance with a strip line to form an input/output matching circuit, characterized in that input/output wire bonding is formed at any point on the strip line. .

[Operation] According to the configuration of the present invention, the input/output wire bonding is formed at any point on the stripline, so the usable frequency can be changed arbitrarily, and different frequencies can be selected as appropriate. Furthermore, if the matching of the matching circuit deviates from the design, trimming can be easily performed, and an amplifier whose frequency characteristics are variable depending on the input and output wire bonding positions can be obtained.

[Example 1] Hereinafter, an example of the present invention will be described in more detail with reference to the drawings. Note that the present invention is not limited to the following examples.

FIG. 1 shows a schematic diagram of a microwave integrated circuit element according to an embodiment of the present invention.

In the figure, 1 is an active element HEMT, 2 is a through line,
3 is a short stub, 4 is a capacitance, 5 is an input wire, 6 is an output wire, 0 is a gate bias pad, 10 is a drain bias pad, 11 is a GaAs substrate, 12 is an input wire bonding part, and 13 is an output wire bonding part.

Then, on the same semiconductor substrate (GaAs substrate 11), one end is an active element (HEMTI) and the other end is grounded through a capacitance 4, and the active element (HEMTI)
and capacitance 4 are connected by a strip line (through line 2) to form an input/output matching circuit, and an input wire bonding section 12 and an output wire bonding section 1 are connected to any point on the strip line (through line 2).
3 is formed.

The operation of the microwave integrated circuit element configured as above will be explained below.

Bias charges are applied to gate bias pad 9 and drain bias pad 10 from the outside. The signal input via the input wire 5 is sent to the HE by the through line 2 and short stub 3, which are distributed constant circuits.
It is matched to the impedance of the MTI, propagated to the gate electrode, and amplified.

Then, the output side distributed constant circuit matches the output impedance of I (EMTI), and the RF signal is taken out via the output wire 6. In this example, the active element is HEMT, but it is not limited to this. Instead, anything with an amplification function is acceptable, such as bipolar transistors or F
It is also suitable for an amplification element using an ET (field effect transistor).

Further, although the substrate is made of GaAs, it goes without saying that other high dielectric constant materials or Si (silicon) may be used.

According to this embodiment, the input wire bonding section 12 and the output wire bonding section 13 are formed at arbitrary points on the strip line (through line 2), so the frequencies that can be used can be changed arbitrarily. 1, and trimming is also easy.

[Effects of the Invention] As explained above, in the monolithic microwave integrated circuit device of the present invention, the input and output wire bonding is formed at any point on the stripline, so the usable frequency can be changed arbitrarily, and different The frequency can be selected as appropriate.

Furthermore, when the matching of the matching circuit deviates from the design, trimming can be easily performed, and an excellent effect can be achieved in that an amplifier whose frequency characteristics are variable depending on the input and output wire bonding positions can be obtained.

[Brief explanation of drawings]

FIG. 1 is a schematic diagram of a monolithic microwave integrated circuit device according to an embodiment of the present invention, and FIG. 2 is a schematic diagram of a conventional monolithic microwave integrated circuit device. DESCRIPTION OF SYMBOLS 1... HEMT, 2... Through line, 3... Short stub, 4... Capacitance, 5... Input wire, 6... Output wire, 7... RF input pad, 8... ...RF output pad, 9...gate bias pad, 10...drain bias pad, 11...
GaAs substrate, work 2...input wire bonding section, 13...output wire bonding section. 10 Ni-drain bias pad 11: GaAs substrate 12: Input wire bonding section 13; Output wire bonding section Fig. 1

Claims (1)

[Claims] (1) Constructed on the same semiconductor substrate, one end is an active element,
A monolithic microwave integrated circuit element whose other end is grounded through a capacitance, and which connects the active element and the capacitance with a strip line to form an input/output matching circuit, wherein the input/output wire is connected at any point on the strip line. A monolithic microwave integrated circuit element characterized by forming bonding.