JP3062358B2 - Microwave integrated circuit device - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a microwave integrated circuit in which an active element such as a field-effect transistor and a circuit element associated with the active element are monolithically formed on the same semiconductor substrate and housed in one package. The present invention relates to an element and can be used for amplification, oscillation, modulation, and the like of microwaves.

[0002]

2. Description of the Related Art In recent years, with the development of high-frequency circuit technology, microwave integrated circuit devices have been widely used from the viewpoints of reliability, economy, small size and light weight. Further, a monolithic microwave integrated circuit (abbreviated as MMIC) has been developed in which an active element such as a transistor and a passive element such as a resistance element and a capacitance element are monolithically formed on the same semiconductor substrate (MMIC). For example, Yasuhisa Yamashita et al. "Power Amplifier Module for Mobile Phones"
National Technical Report Vol.36 No.4 Aug. (1990) p
34, Regarding MMIC, Tetsuji Imai et al., “Compound Semiconductor Device (2), (January 5, 1985)
p33).

Hereinafter, the above-described conventional microwave integrated circuit device will be described with reference to FIGS.
FIG. 4 is a schematic view of a conventional microwave integrated circuit device, FIG. 5 is an equivalent circuit diagram of the microwave integrated circuit device of FIG. 4, and FIG. 6 is a field effect transistor (active element) used in the microwave integrated circuit device. FIG. 1 is a schematic diagram of a chip of the present invention.

In FIGS. 4 and 5, reference numeral 21 denotes, for example, F
It is an active element made of ET. 22A and 22B are microstrips which are through lines. 23A, 23
B is a microstrip that is a short stub.
24A to 24D are chip capacitances for grounding high frequency components to ground. 25 is a chip resistor for protecting the gate. Reference numeral 26 denotes a stabilizing chip resistor for preventing oscillation at a low frequency. 27 is a chip resistor for adjusting the gate voltage value. 28A to 28D are via holes (via holes) connected to the back surface of the semiconductor substrate
It is. 29 is a high dielectric constant substrate, 30 is a back metal thin plate. 31 is an input pad and 32 is an output pad. 33
Is a gate bias pad for the active element (FET) 21, and 34 is a drain bias pad for the active element (FET) 21.

In FIG. 6, reference numerals 35, 36, and 37 denote a gate, a source, and a chip of the active element (FET) 21, respectively.
It is a drain. The operation of the microwave integrated circuit device configured as described above will be described below. Active element (FE
T) The gate and drain of 21 are externally
A DC bias is applied through a pad 33 for gate bias and a pad 34 for drain bias.

A high frequency (RF) signal input from the input pad 31 is supplied to the active element (FE) in a desired frequency band by a through line (microstrip 22A) and a short stub (microstrip 23A) on the input side.
T), after being matched to the impedance of the active element (FET) 21, the amplified signal is propagated to the gate of the active element (FET) 21 and amplified, and the amplified signal output from the drain of the active element (FET) 21 is similarly output through line ( Microstrip 22B) and short stub (microstrip 23)
B), the impedance is matched to the load impedance in the desired frequency band, and is extracted from the output pad 32.

[0007]

However, in the above configuration, a large number of chip components (active elements (FETs) 21, chip capacitances 24A to 24D, chip resistors 25 to 27) are provided on the high dielectric substrate 29. There is a problem that the mounting has to be carried out and the labor is great.
Further, there is a problem that the area of the high dielectric constant substrate 29 becomes large. This is because the active element (FET) 21 is packaged as a single product and has a larger package area than its chip area, although a resistance element and a capacitance element can be produced in the manufacturing process.

An object of the present invention is to reduce the number of chip components required when mounting a chip component such as an active element on a substrate to form a microwave integrated circuit device, and to facilitate manufacture.

[0009]

According to a first aspect of the present invention, there is provided a microwave integrated circuit device, wherein a signal is input to a semiconductor substrate.
The gate, the drain from which the amplified signal is output, and the ground
Field-effect transistor with a source
Connect one end to the transistor gate and the other end
A first resistive element to which a gate bias is applied;
A second resistor element having one end connected to the gate of the transistor
And one end connected to the other end of the first resistance element
A first transistor having the other end connected to the source of the field effect transistor;
One end is connected to the other end of the capacitance element and the second resistance element.
Connect each of them together with the field-effect transistor saw.
A third resistance element having the other end connected to the
And a capacitance element. According to a second aspect of the present invention, there is provided a microwave integrated circuit device in which a signal is input to a semiconductor substrate.
The base that is input, the collector from which the amplified signal is output,
Bipolar transistor with emitter grounded
And connect one end to the base of the bipolar transistor
And a first resistor to which a base bias is applied to the other end.
Connect one end to the element and the base of the bipolar transistor
One end is connected to the other end of the second resistance element and the other end of the first resistance element.
Connected to the emitter of a bipolar transistor
A first capacitance element having the other end connected thereto, and a second resistance element;
Connect one end to the other end of the resistance element and
Connected the other end to the emitter of the transistor
A third resistance element and a second capacitance element;
There Ete.

[0010]

According to the structure of the first aspect, the active element is provided.
Field effect transistor and first, second and third resistors
And the first and second capacitance elements are housed in one package, and the field-effect transistor
And the first, second and third resistance elements and the first and second resistance elements.
When configuring a microwave integrated circuit device for amplification, oscillation, and modulation using the two capacitance elements and the like, the number of chip components mounted on the substrate is reduced.

[0011] According to the configuration of claim 2, wherein, in the active element
There bipolar transistor and the first, will be the second and third resistive element and the first and second capacitance elements are housed in one package, bipolar
Transistor , first, second and third resistance elements and first
And amplification using the second capacitance element and the like.
When configuring a microwave integrated circuit device for oscillation and modulation, the number of chip components mounted on a substrate is reduced.

[0012]

An embodiment of the present invention will be described below with reference to the drawings. FIG. 1 is an equivalent circuit diagram of a microwave integrated circuit device having a microwave integrated circuit device according to one embodiment of the present invention. FIG. 2 is a microwave integrated circuit device having a microwave integrated circuit device according to one embodiment of the present invention. FIG. 3 is a schematic view of a microwave integrated circuit device.

In FIGS. 1 and 2, reference numeral 1 denotes a microwave integrated circuit device, and a GaAs FET is formed on the same semiconductor substrate.
The active element 1A, the resistance elements 1B to 1D, and the capacitance elements 1E and 1F are monolithically formed and accommodated in one package. Active element 1A
Are formed on a semiconductor substrate with the gate connected to the signal input terminal 1G, the drain connected to the signal output terminal 1H, and the source connected to the ground terminal 1I. The first resistance element 1B is formed on the semiconductor substrate with one end connected to the gate of the active element 1A and the other end connected to the gate bias terminal 1J. The second resistance element 1C is formed on the semiconductor substrate with one end connected to the gate of the active element 1A.

The first capacitance element 1E is formed on a semiconductor substrate with one end connected to the other end of the first resistance element 1B and the other end connected to the source of the active element 1A. The third resistance element 1D and the second capacitance element 1F are formed on the semiconductor substrate with one end connected to the other end of the second resistance element 1C and the other end connected to the source of the active element 1A. doing.

In the above, the first resistive element 1B and the first
Functions as a bias circuit element, and the second and third resistance elements 1C, 1D and the second
Functions as a stabilizing circuit element. 2A and 2B are microstrips which are through lines. 3A and 3B are microstrips which are short stubs. Reference numerals 4A to 4C denote chip capacitances for grounding high-frequency components to ground. 8A-8
C is a via hole (via hole) connected to the back surface of the substrate. 9 is a high dielectric constant substrate, 10 is a back metal thin plate. 11 is an input pad and 12 is an output pad. 1
Reference numeral 3 denotes a gate bias pad for the active element (FET) 1, and reference numeral 14 denotes a drain bias pad for the active element (FET) 1.

In FIG. 3, reference numerals 15, 16, and 17 denote the gate, source, and drain of the chip of the active device (FET) 1, respectively. 19 is a pad for gate bias, which is shown in FIG.
Of the gate bias pad 13. 18A, 1
Reference numeral 8B denotes a parallel plate type (hereinafter abbreviated as MIM) capacitance element for grounding a high frequency component to the ground, and corresponds to the capacitance elements 1E and 1F in FIG. 1, respectively. Reference numeral 5 denotes a resistance element for protecting the gate, and the first resistance element 1 shown in FIG.
B. Reference numeral 6 denotes a stabilizing resistance element for preventing oscillation at a low frequency, which corresponds to the second resistance element 1C in FIG.
Reference numeral 7 denotes a resistance element for adjusting a gate voltage value, which corresponds to the third resistance element 1D in FIG.

In the microwave integrated circuit device configured as described above, the second capacitance element 1E is only a part of the chip capacitance 24B shown in FIG. 4, but the configuration on other circuit diagrams is not shown. The operation is substantially the same as that of the first embodiment, and the operation is the same as that of the conventional microwave integrated circuit device. According to this embodiment, an active element (FET) 1, first, second and third resistance elements 1B to 1D, and first and second capacitance elements 1
E and 1F are housed in one package, and the active element (FET) 1, the first, second and third resistance elements 1B to 1D, the first and second capacitance elements 1E and 1F, etc. When used to construct a microwave integrated circuit device for amplification, oscillation, and modulation, the number of chip components mounted on the high dielectric substrate 9 can be reduced, and manufacturing becomes easier.

Further, since the first to third resistance elements 1B to 1D and the first and second capacitance elements 1E and 1F are incorporated in the package of the active element (FET) 1, these components are not required. It can be made very compact and the high dielectric substrate 9 can be made smaller.
In this embodiment, the active element is a GaAs FET. However, the present invention is not limited to this. Any element having an amplifying function may be used. For example, a bipolar transistor or an active element made of another semiconductor material can be used. In the case of a bipolar transistor , the gate, the drain, and the source serve as a base, a collector, and an emitter, respectively.

In the above embodiment, each resistance element is formed using a semiconductor. However, the resistance element may be formed by sputtering tungsten. Although the MIM type is used as the capacitance element, a diode may be used.

[0020]

According to the microwave integrated circuit device of the first aspect , the field effect transistor which is an active device and the
1, the second and third resistance elements and the first and second capacitors.
The pasitance element is housed in one package, and the field effect transistor and the first, second and
When configuring a microwave integrated circuit device for amplification, oscillation, and modulation using the third resistance element and the first and second capacitance elements, the number of chip components mounted on the substrate is reduced. Therefore, the manufacturing can be facilitated and labor saving during assembly can be achieved.

Also, a field effect transistor and first and second
And third resistance element and first and second capacitors
Power devices in a single package.
Field effect transistor and first, second and third resistance elements
And the overall size of the first and second capacitance elements can be reduced, and the high dielectric constant substrate on which these components are mounted can be reduced in size. The microwave according to claim 2.
According to the integrated circuit device , the bipolar tiger which is the active device
The transistor , the first, second and third resistance elements, and the first and second capacitance elements are housed in one package, and the bipolar transistor , the first, second and third resistance elements and the first When configuring a microwave integrated circuit device for amplification, oscillation, and modulation using the first and second capacitance elements and the like, the number of chip components mounted on a substrate can be reduced, and manufacturing becomes easier. Thus, labor saving during assembly can be achieved.

In addition, since the bipolar transistor , the first, second and third resistance elements, and the first and second capacitance elements are contained in one package,
The overall dimensions of the bipolar transistor , the first, second, and third resistance elements, and the first and second capacitance elements can be reduced, and the high-permittivity substrate on which these components are mounted can be reduced in size.

[Brief description of the drawings]

FIG. 1 is an equivalent circuit diagram showing a configuration of a microwave integrated circuit device provided with a microwave integrated circuit element according to one embodiment of the present invention.

FIG. 2 is a schematic diagram of a microwave integrated circuit device provided with a microwave integrated circuit element according to one embodiment of the present invention.

FIG. 3 is a schematic diagram showing a chip configuration of a microwave integrated circuit device according to one embodiment of the present invention.

FIG. 4 is a schematic diagram showing an example of a configuration of a conventional microwave integrated circuit device.

5 is an equivalent circuit diagram of the microwave integrated circuit device of FIG.

FIG. 6 is a schematic diagram showing a chip configuration of a conventional microwave integrated circuit device.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 Microwave integrated circuit element 1A Active element (FET) 1B 1st resistance element 1C 2nd resistance element 1D 3rd resistance element 1E 1st capacitance element 1F 2nd capacitance element 1G Signal input terminal 1H Signal output terminal 1I Ground terminal 1J Gate bias terminal

────────────────────────────────────────────────── ─── Continuation of front page (56) References JP-A-4-30457 (JP, A) (58) Fields investigated (Int. Cl. ⁷ , DB name) H01L 25/00

Claims (2)

(57) [Claims] A gate for receiving a signal on a semiconductor substrate ;
And the drain from which the amplified signal is output and the grounded source
A field effect transistor that includes a chromatography scan, the field effect
Connect one end to the transistor gate and the other end
A first resistance element gate bias is applied, said collector
A second resistor element having one end connected to the gate of the field effect transistor, a first capacitance connected to the other end to a source of the field effect transistor with the other end is connected to one end of said first resistor element An element and one end respectively connected to the other end of the second resistance element and the electric field effect element.
The other end of each transistor is connected to the source of the transistor .
And a second capacitance element. 2. A base for receiving a signal on a semiconductor substrate.
Source, amplified signal output collector, and grounded
A bipolar transistor having a
Connect one end to the base of the polar transistor and
A first resistance element having a base bias applied to the other end,
One end was connected to the base of the bipolar transistor
One end is connected to a second resistance element and the other end of the first resistance element.
Connection and emission of the bipolar transistor.
A first capacitance element having the other end connected to the
One end is connected to the other end of the second resistance element.
The other end to the emitter of the bipolar transistor.
A third resistor element and a second capacitor respectively connected
A microwave integrated circuit device comprising: