JPH03288454A - Wire bonding method - Google Patents

Wire bonding method

Info

Publication number
JPH03288454A
JPH03288454A JP2089921A JP8992190A JPH03288454A JP H03288454 A JPH03288454 A JP H03288454A JP 2089921 A JP2089921 A JP 2089921A JP 8992190 A JP8992190 A JP 8992190A JP H03288454 A JPH03288454 A JP H03288454A
Authority
JP
Japan
Prior art keywords
wire
ball
capillary
chip
end portion
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2089921A
Other languages
Japanese (ja)
Other versions
JP2808809B2 (en
Inventor
Hiroshi Haji
宏 土師
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
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Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP2089921A priority Critical patent/JP2808809B2/en
Publication of JPH03288454A publication Critical patent/JPH03288454A/en
Application granted granted Critical
Publication of JP2808809B2 publication Critical patent/JP2808809B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
    • H01L2224/48471—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area being a ball bond, i.e. wedge-to-ball, reverse stitch
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H01L2224/7825—Means for applying energy, e.g. heating means
    • H01L2224/783—Means for applying energy, e.g. heating means by means of pressure
    • H01L2224/78301—Capillary
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85009—Pre-treatment of the connector or the bonding area
    • H01L2224/8503—Reshaping, e.g. forming the ball or the wedge of the wire connector
    • H01L2224/85035—Reshaping, e.g. forming the ball or the wedge of the wire connector by heating means, e.g. "free-air-ball"
    • H01L2224/85045—Reshaping, e.g. forming the ball or the wedge of the wire connector by heating means, e.g. "free-air-ball" using a corona discharge, e.g. electronic flame off [EFO]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/8512—Aligning
    • H01L2224/85148—Aligning involving movement of a part of the bonding apparatus
    • H01L2224/85169—Aligning involving movement of a part of the bonding apparatus being the upper part of the bonding apparatus, i.e. bonding head, e.g. capillary or wedge
    • H01L2224/8518—Translational movements
    • H01L2224/85181—Translational movements connecting first on the semiconductor or solid-state body, i.e. on-chip, regular stitch
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/8512—Aligning
    • H01L2224/85148—Aligning involving movement of a part of the bonding apparatus
    • H01L2224/85169—Aligning involving movement of a part of the bonding apparatus being the upper part of the bonding apparatus, i.e. bonding head, e.g. capillary or wedge
    • H01L2224/8518—Translational movements
    • H01L2224/85186—Translational movements connecting first outside the semiconductor or solid-state body, i.e. off-chip, reverse stitch
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01033—Arsenic [As]

Abstract

PURPOSE:To decrease wire loop height, and form an electronic parts which is thin and compact, by making a capillary into which a wire is inserted descend, forming a ball at the lower end portion of the wire by using electric spark, and simultaneously hardening the lower end portion of the wire which end portion is continuously connected to the ball. CONSTITUTION:A ball 5 is formed at the lower end portion of a wire 4, with electric spark by using a torch electrode. The lower end portion of the wire 4 continuously connected to the ball 5 is heated by fusion heat of the electric spark, and a part 4a to be heated is hardened. Since the rigidity of the part 4a is changed by heating in this manner, said part vertically stands from the ball 5. When a capillary 3 is made to descend from an ascending position toward the chip 2 so as to draw an arc type locus, the wire 4 is bent while bending from the upper end portion 4b of the part 4a to be heated. As the result, the wire loop height h1 from the upper surface of a chip 2 can be decreased.

Description

【発明の詳細な説明】 （産業上の利用分野） 本発明はワイヤボンディング方法に関し、ワイヤ下端部
のボールを基板にボンディングした後、ワイヤを被加熱
部の上端部から折り曲げて、チップにボンディングする
ことにより、ワイヤループ高を低くするようにしたもの
である。Detailed Description of the Invention (Industrial Application Field) The present invention relates to a wire bonding method, which involves bonding a ball at the lower end of the wire to a substrate, then bending the wire from the upper end of the heated part and bonding it to a chip. As a result, the height of the wire loop can be lowered.

（従来の技術） 基板とチップを接続するワイヤボンディングは、キャピ
ラリに挿通されたワイヤの下端部に、電気的スパークに
より溶融ボールを形成し、次いで雰囲気熱により冷却硬
化したボールを、キャピラリによりチップに押し付けて
ボンディングした後、キャピラリを上昇させ、次いで基
板へ下降させ、ワイヤの他端部側を基板に押し付けてボ
ンディングするようになっている。一般に、前者のボン
ディングはボールボンディング、後者のボンディングは
ステンチボンディングと呼ばれる。(Prior art) Wire bonding, which connects a substrate and a chip, involves forming a molten ball at the lower end of a wire inserted into a capillary by an electric spark, and then cooling and hardening the ball by atmospheric heat, which is bonded to the chip by the capillary. After pressing and bonding, the capillary is raised and then lowered to the substrate, and the other end of the wire is pressed against the substrate for bonding. Generally, the former bonding is called ball bonding, and the latter bonding is called stench bonding.

第２図は、このようにしてボンディングされた従来のワ
イヤループを示すものであって、１００は基板、１０１
はチップ、１０２はワイヤ、１０３はチップ１０１にボ
ンディングされたボール、１０４はキャピラリ、矢印は
キャピラリ１０４の軌跡である。FIG. 2 shows a conventional wire loop bonded in this way, in which 100 is a substrate, 101
is a chip, 102 is a wire, 103 is a ball bonded to the chip 101, 104 is a capillary, and the arrow is the locus of the capillary 104.

（発明が解決しようとする課題） 上記のようにワイヤ１０２の下端部に電気的スパークに
より溶融ボール１０３を形成する場合、ワイヤ１０２の
ボール１０３に連続する部分１０２ａは、溶融熱により
高温（一般に１０００℃弱）に加熱されることから剛度
が変る。(Problems to be Solved by the Invention) When forming the molten ball 103 at the lower end of the wire 102 by electric spark as described above, the portion 102a of the wire 102 continuous with the ball 103 is heated to a high temperature (generally 1000 The stiffness changes as it is heated to a temperature of just below ℃.

このため、第２図に示すように、剛性が変った被加熱部
１０２ａは、ボール１０３から垂直に直立する。Therefore, as shown in FIG. 2, the heated portion 102a whose rigidity has been changed stands vertically from the ball 103.

このように、被加熱部１０２ａがチップ１０１上に直立
すると、チップ上面からのワイヤループ高ｈ１は高くな
って（一般に０．２〜０．３ｍｍ）、次いで樹脂封止や
モールドプレスなどにより形成される電子部品は肉厚大
形化するだけでなく、高ループワイヤのアンテナ作用に
より、チップ１０１に形成された電気回路にノイズなど
の電気的悪影響を与えやすく、更にはワイヤループの倒
れにより、相隣るワイヤ同士が接触して短絡しやすい問
題があった。In this way, when the heated part 102a stands upright on the chip 101, the wire loop height h1 from the top surface of the chip becomes high (generally 0.2 to 0.3 mm), and then it is formed by resin sealing, mold pressing, etc. Not only do electronic components become thicker and larger, but the antenna effect of the high-loop wire tends to cause adverse electrical effects such as noise on the electrical circuit formed on the chip 101, and furthermore, the collapse of the wire loop can cause interference. There was a problem that adjacent wires were likely to come into contact with each other and cause a short circuit.

したがって本発明は、ワイヤループ高を低く形成できる
ワイヤボンディング方法を提供することを目的とする。Therefore, an object of the present invention is to provide a wire bonding method that can form a wire loop with a low height.

（課題を解決するための手段） このために本発明は、キャピラリを下降させて、ワイヤ
の下端部に電気的スパークにより形成されたボールを、
キャピラリにより基板に押し付けてボンディングし、 次いでキャピラリを上昇させるとともに、上記ボールか
ら直立する被加熱部の上端部からワイヤを折り曲げなが
ら、キャピラリをチップ上面に下降させて、キャピラリ
によりワイヤをチップにボンディングするようにしたも
のである。(Means for Solving the Problems) For this purpose, the present invention lowers the capillary to create a ball formed by an electric spark at the lower end of the wire.
Bonding is performed by pressing the capillary against the substrate, and then the capillary is raised, and while bending the wire from the upper end of the heated portion standing upright from the ball, the capillary is lowered to the top surface of the chip, and the wire is bonded to the chip using the capillary. This is how it was done.

（作用） 上記構成によれば、ボールは基板にボンディングされる
ことから、ボールに連続する被加熱部は基板上に直立す
ることとなり、被加熱部の高さはチップ厚に相殺されて
、ワイヤループ高を低くできる。(Function) According to the above configuration, since the ball is bonded to the substrate, the heated portion continuous to the ball stands upright on the substrate, and the height of the heated portion is offset by the chip thickness, and the wire Loop height can be lowered.

（実施例） 次に、図面を参照しながら本発明の詳細な説明する。(Example) Next, the present invention will be described in detail with reference to the drawings.

第１図（ａ）〜（ｄ）は、ワイヤボンディングの作業順
を示すものであって、１はリードフレームなどの基板、
２は基板１に搭載されたチップ、３はキャピラリ、４は
キャピラリ３に挿通されたワイヤである。ワイヤ４の下
端部には、トーチ電極による電気的スパークにより、ボ
ール５が形成されている。またボール５に連続するワイ
ヤ４の下端部は、電気的スパークにともなう溶融熱によ
り加熱されて、その被加熱部４ａは加熱されなかった部
分と剛性が変っている。FIGS. 1(a) to 1(d) show the order of wire bonding, in which 1 indicates a substrate such as a lead frame;
2 is a chip mounted on the substrate 1, 3 is a capillary, and 4 is a wire inserted into the capillary 3. A ball 5 is formed at the lower end of the wire 4 by an electric spark from a torch electrode. Further, the lower end portion of the wire 4 continuous to the ball 5 is heated by the heat of fusion caused by the electric spark, and the heated portion 4a has a different rigidity from the unheated portion.

なおボール５は、電気的スパークにより溶融形成された
後、雰囲気温度に冷却されて、基板１にボンディングさ
れる際には硬化している。Note that the ball 5 is melted and formed by an electric spark, then cooled to ambient temperature, and hardened when bonded to the substrate 1.

同図（ａ）に示すように、キャピラリ３を垂直に下降さ
せて、キャピラリ３によりボール５を基板１に押し付け
てボールボンディングする。As shown in FIG. 3A, the capillary 3 is vertically lowered and the ball 5 is pressed against the substrate 1 by the capillary 3 to perform ball bonding.

次いで同図（ｂ）に示すように、キャピラリ３を垂直に
上昇させた後、キャピラリ３を円弧状に下降させて、ワ
イヤ４をチップ２の上面に押し付けてステッチボンディ
ングしく同図（Ｃ））、次いでボンディング部分をワイ
ヤ力・ツトして、キャピラリ３を上昇させる（同図（ｄ
））。Next, as shown in Figure (b), the capillary 3 is raised vertically, and then lowered in an arc to press the wire 4 against the top surface of the chip 2 to perform stitch bonding (Figure (C)). Then, wire force is applied to the bonding part to raise the capillary 3 (see (d) in the same figure).
)).

上記被加熱部４ａは、加熱されて剛性が変っていること
から、ボール５から垂直に直立しており、第１図（Ｃ）
に示すように、キャピラリ３を上昇位置からチップ２へ
向って円弧状に下降させると、ワイヤ４は被加熱部４ａ
の上端部４ｂから折れ曲りながら屈曲する。Since the heated portion 4a is heated and its rigidity is changed, it stands vertically from the ball 5, as shown in FIG. 1(C).
As shown in FIG. 3, when the capillary 3 is lowered in an arc shape from the raised position toward the chip 2, the wire 4 is moved to the heated portion 4a.
It bends while bending from the upper end 4b.

このように、基板１に対してボール５のボンディングを
行い、次いで上記上端部４ｂからワイヤ４を折り曲げて
、チップ２に対するボンディングを行えば、チップ２上
面からのワイヤループ高ｈ１を低くできる。因みに、代
表的なチップ厚ｈ２は０．３〜０．５　ｍ、被加熱部高
ｈ３は０．５ｎ程度、ワイヤループ高ｈ１は０．１　ｗ
ｍ以下であり、被加熱部高ｈ３はチップ厚ｈ２はほぼ等
しいことから、被加熱部高ｈ３はチップ厚ｈ２によりほ
ぼ相殺され、全体高ｈｌ＋ｈ２を著しく低くできる。In this way, by bonding the ball 5 to the substrate 1, then bending the wire 4 from the upper end 4b and bonding to the chip 2, the wire loop height h1 from the top surface of the chip 2 can be reduced. Incidentally, typical chip thickness h2 is 0.3 to 0.5 m, heated part height h3 is about 0.5n, and wire loop height h1 is 0.1w.
m or less, and since the heated part height h3 and the chip thickness h2 are almost equal, the heated part height h3 is almost canceled out by the chip thickness h2, and the overall height hl+h2 can be significantly lowered.

なお第１図（ｂ）において、キャピラリ３を上昇させる
場合、破線矢印に示すように、キャピラリ３を、次のボ
ンディングを行うチップ２と反対側にリバ・−ス運動さ
せることにより、ワイヤ４にしごきを付与すれば、チッ
プ２からの立ち上り角度α（同図（ｄ））を大きくして
、ワイヤ４がチップ２の上面に接地短絡するのを防止で
きる。In FIG. 1(b), when raising the capillary 3, the capillary 3 is reversely moved to the side opposite to the chip 2 to which the next bonding is to be performed, as shown by the broken line arrow, so that the wire 4 is raised. By applying stiffening, the rising angle α (FIG. 2(d)) from the chip 2 can be increased to prevent the wire 4 from being short-circuited to the top surface of the chip 2.

（発明の効果） 以上説明したように本発明は、ワイヤが挿通されたキャ
ピラリを下降させて、このワイヤの下端部に電気的スパ
ークにより形成されたボールを、キャピラリにより基板
に押し付けてボンディングし、 次いでキャピラリを上昇させるとともに、上記ボールか
ら直立する被加熱部の上端部からワイヤを折り曲げなが
ら、キャピラリをチップ上面に下降させて、キャピラリ
によりワイヤをチップにボンディングするようにしてい
るので、ワイヤループ高を低くして、肉薄でコンパクト
な電子部品を形成でき、またワイヤループのアンテナ作
用を解消し、更にはワイヤループの倒れによる短絡を防
止できる。(Effects of the Invention) As explained above, the present invention involves lowering a capillary through which a wire is inserted, and bonding a ball formed by an electric spark at the lower end of the wire by pressing it against a substrate with the capillary. Next, the capillary is raised, and while the wire is bent from the upper end of the heated part standing upright from the ball, the capillary is lowered to the top surface of the chip, and the wire is bonded to the chip by the capillary, so the wire loop height is lowered. By lowering the height, it is possible to form a thin and compact electronic component, eliminate the antenna effect of the wire loop, and furthermore prevent short circuits due to the collapse of the wire loop.

【図面の簡単な説明】[Brief explanation of the drawing]

図は本発明の実施例を示すものであって、第１図（ａ）
、（ｂ）、（ｃ）、（ｄ）はボンディング作業順の側面
図、第２図は従来手段の側面図である。 １・・・基板 ２・・・チップ ３・・・キャピラリ ４・・・ワイヤ ４ａ・・・被加熱部 ５・・・ボールThe figure shows an embodiment of the present invention, and FIG. 1(a)
, (b), (c), and (d) are side views of the bonding work order, and FIG. 2 is a side view of the conventional means. 1... Substrate 2... Chip 3... Capillary 4... Wire 4a... Part to be heated 5... Ball

Claims (1)

【特許請求の範囲】 　ワイヤが挿通されたキャピラリを下降させて、このワ
イヤの下端部に電気的スパークにより形成されたボール
を、キャピラリにより基板に押し付けてボンディングし
、 次いでキャピラリを上昇させるとともに、上記ボールか
ら直立する被加熱部の上端部からワイヤを折り曲げなが
ら、キャピラリをチップ上面に下降させて、キャピラリ
によりワイヤをチップにボンディングすることを特徴と
するワイヤボンディング方法。[Claims] A capillary through which a wire is inserted is lowered, and a ball formed at the lower end of the wire by an electric spark is pressed and bonded to a substrate by the capillary, and then the capillary is raised and the above-mentioned A wire bonding method characterized by bonding the wire to the chip with the capillary by lowering the capillary to the top surface of the chip while bending the wire from the upper end of the heated part that stands upright from the ball.
JP2089921A 1990-04-04 1990-04-04 Wire bonding method Expired - Lifetime JP2808809B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2089921A JP2808809B2 (en) 1990-04-04 1990-04-04 Wire bonding method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2089921A JP2808809B2 (en) 1990-04-04 1990-04-04 Wire bonding method

Publications (2)

Publication Number Publication Date
JPH03288454A true JPH03288454A (en) 1991-12-18
JP2808809B2 JP2808809B2 (en) 1998-10-08

Family

ID=13984167

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2089921A Expired - Lifetime JP2808809B2 (en) 1990-04-04 1990-04-04 Wire bonding method

Country Status (1)

Country Link
JP (1) JP2808809B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008541208A (en) * 2005-04-27 2008-11-20 プリバシーズ，インコーポレイテッド Electronic card and manufacturing method thereof

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008541208A (en) * 2005-04-27 2008-11-20 プリバシーズ，インコーポレイテッド Electronic card and manufacturing method thereof

Also Published As

Publication number Publication date
JP2808809B2 (en) 1998-10-08

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