JPH0328583Y2 - - Google Patents

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Publication number
JPH0328583Y2
JPH0328583Y2 JP4791686U JP4791686U JPH0328583Y2 JP H0328583 Y2 JPH0328583 Y2 JP H0328583Y2 JP 4791686 U JP4791686 U JP 4791686U JP 4791686 U JP4791686 U JP 4791686U JP H0328583 Y2 JPH0328583 Y2 JP H0328583Y2
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JP
Japan
Prior art keywords
resistor
insulating plate
feedback
terminals
layers
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP4791686U
Other languages
Japanese (ja)
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JPS62159010U (en
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
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Priority to JP4791686U priority Critical patent/JPH0328583Y2/ja
Publication of JPS62159010U publication Critical patent/JPS62159010U/ja
Application granted granted Critical
Publication of JPH0328583Y2 publication Critical patent/JPH0328583Y2/ja
Expired legal-status Critical Current

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  • Microwave Amplifiers (AREA)
  • Amplifiers (AREA)

Description

【考案の詳細な説明】 「産業上の利用分野」 この考案は高周波信号を増幅する高周波帰還増
幅器に関する。
[Detailed Description of the Invention] "Industrial Application Field" This invention relates to a high frequency feedback amplifier that amplifies high frequency signals.

「従来技術」 マイクロ波のような高い周波数の信号を増幅す
る増幅器において、帰還回路に使用する抵抗器は
並列容量が小さいことが要求される。つまり帰還
抵抗器に並列に容量を持つとき、増幅する信号の
周波数に応じて帰還回路のインピーダンスが変化
し、増幅率が周波数によつて大きく変化する欠点
がある。このため従来は第2図に示すように並列
容量が小さいチツプ形抵抗器1及び2を二個直列
接続して用いている。
"Prior Art" In an amplifier that amplifies high frequency signals such as microwaves, a resistor used in a feedback circuit is required to have a small parallel capacitance. In other words, when a feedback resistor has a capacitance in parallel, the impedance of the feedback circuit changes depending on the frequency of the signal to be amplified, and the amplification factor has a drawback that it changes greatly depending on the frequency. For this reason, conventionally, as shown in FIG. 2, two chip resistors 1 and 2 with small parallel capacitances are connected in series.

チツプ抵抗器1及び2は周知のように抵抗体が
膜状に形成されるため並列容量を小さくすること
ができる。
As is well known, the chip resistors 1 and 2 have resistive elements formed in the form of a film, so that the parallel capacitance can be reduced.

然も第2図に示すように二個のチツプ形抵抗器
1と2を直列接続することによつて二個のチツプ
形抵抗器1と2の並列容量は直列接続されて全体
として更に小さい容量値となる。
However, as shown in Figure 2, by connecting the two chip resistors 1 and 2 in series, the parallel capacitance of the two chip resistors 1 and 2 is connected in series, and the overall capacitance becomes smaller. value.

またチツプ形抵抗器1と2を第2図に示すよう
に一方の抵抗器2を能動素子3の出力側端子4に
植設し、この植設した抵抗器2の他端に抵抗器1
を直角に結合し、抵抗器1の他端を電線5を通じ
て能動素子3の入力端子6に接続する立体構造に
することにより抵抗器1,2及び電線5とアース
導体7との間の距離を大きく採ることができる。
よつて帰還回路とアースとの間の浮遊容量を小さ
くすることができる構造としている。
In addition, as shown in FIG. 2, one of the chip resistors 1 and 2 is implanted in the output side terminal 4 of the active element 3, and the resistor 1 is connected to the other end of the implanted resistor 2.
By connecting the resistors 1 and 2 at right angles and connecting the other end of the resistor 1 to the input terminal 6 of the active element 3 through the wire 5, the distance between the resistors 1, 2 and the wire 5 and the ground conductor 7 can be reduced. It can be taken in large quantities.
Therefore, the structure is such that stray capacitance between the feedback circuit and the ground can be reduced.

なお第2図において8はチツプ形容量を示す。
このチツプ形容量8は抵抗器1及び2と直列接続
され、帰還回路を構成している。従つて能動素子
3と抵抗器1及び2と、容量8は第3図に示すよ
うな回路として表わすことができる。
In FIG. 2, numeral 8 indicates a chip type capacitor.
This chip type capacitor 8 is connected in series with resistors 1 and 2 to form a feedback circuit. Therefore, the active element 3, resistors 1 and 2, and capacitor 8 can be represented as a circuit as shown in FIG.

「考案が解決しようとする問題点」 第2図に示す従来の構造にした場合、チツプ部
品を基板に対して植設して使用するため機械的な
強度が弱い欠点がある。また組立に手間が掛る欠
点がある。
``Problems to be Solved by the Invention'' The conventional structure shown in FIG. 2 has the drawback of low mechanical strength because the chip components are embedded in the substrate. Another drawback is that it takes time to assemble.

「問題点を解決するための手段」 この考案においては補助絶縁板に複数の抵抗体
層を形成し、この複数の抵抗体層を容量素子で直
列接続して一つの帰還抵抗器を構成し、この帰還
抵抗器の両端から端子を導出し、この端子によつ
て能動素子を装着した主絶縁板に補助絶縁板を垂
直に植設し、帰還抵抗器を能動素子の入力と出力
との間に接続する構成としたものである。
"Means for solving the problem" In this invention, a plurality of resistor layers are formed on an auxiliary insulating plate, and a single feedback resistor is constructed by connecting the plurality of resistor layers in series with a capacitive element. Lead out terminals from both ends of this feedback resistor, use these terminals to install an auxiliary insulating plate vertically to the main insulating plate on which the active element is attached, and place the feedback resistor between the input and output of the active element. It is configured to connect.

この考案の構成によれば複数の抵抗体層を直列
接続することによつて帰還抵抗器の並列容量を小
さくすることができる。
According to the configuration of this invention, the parallel capacitance of the feedback resistor can be reduced by connecting a plurality of resistor layers in series.

また帰還抵抗器の両端に端子を突設し、この端
子によつて帰還抵抗器を能動素子の入力と出力と
の間に接続して補助絶縁板を主絶縁板に対して垂
直に植設する構造としたことにより帰還抵抗器と
アースとの間の浮遊容量値を小さくすることがで
きる。
In addition, terminals are provided at both ends of the feedback resistor, and the feedback resistor is connected between the input and output of the active element through these terminals, and the auxiliary insulating plate is installed perpendicularly to the main insulating plate. With this structure, the stray capacitance value between the feedback resistor and the ground can be reduced.

よつてこの考案によれば帰還抵抗器の並列容量
と浮遊容量を小さい値とすることができるため周
波数に対して均一な増幅率を持つ高周波帰還増幅
器を得ることができる。
Therefore, according to this invention, since the parallel capacitance and stray capacitance of the feedback resistor can be made small, it is possible to obtain a high frequency feedback amplifier having a uniform amplification factor with respect to frequency.

然も補助絶縁板に帰還抵抗器を一体に形成する
ため組立が容易である。また機械的な強度も強い
高周波帰還増幅器を提供できる。
Moreover, since the feedback resistor is integrally formed on the auxiliary insulating plate, assembly is easy. It is also possible to provide a high frequency feedback amplifier with strong mechanical strength.

「実施例」 第1図にこの考案の一実施例を示す。第1図に
おいて第2図と対応する部分には同一符号を付し
て示す。
``Example'' Figure 1 shows an example of this invention. In FIG. 1, parts corresponding to those in FIG. 2 are designated by the same reference numerals.

第1図において11は補助絶縁板を示す。この
補助絶縁板11にこの実施例では二つの抵抗体層
12,13を形成し、この二つの抵抗体層12,
13の間に導電層14,15を形成し、この導電
層14,15を介してチツプ形容量8を接続し、
抵抗と容量を直列接続した帰還回路を構成した場
合を示す。
In FIG. 1, 11 indicates an auxiliary insulating plate. In this embodiment, two resistor layers 12 and 13 are formed on this auxiliary insulating plate 11.
Conductive layers 14 and 15 are formed between the conductive layers 13 and the chip capacitor 8 is connected through the conductive layers 14 and 15,
This shows a case where a feedback circuit is configured by connecting a resistor and a capacitor in series.

つまり補助絶縁板11には両端に導電層16と
17を形成すると共にこの導電層16と17にそ
れぞれ一端が接触した抵抗体層12,13を形成
する。これら抵抗体層12と13の各他端にこれ
ら抵抗体層12と13を直列接続するための導電
層14,15を形成し、この導電層14,15に
チツプ形容量8の電極8A,8Bを半田付けし、
チツプ形容量8を抵抗体層12と13の間に直列
に接続する。この接続構造によれば第3図に示し
た帰還回路と同じ帰還回路が構成される。一方こ
の考案においては導電層16と17に端子18と
19を取付ける。この端子18と19は補助絶縁
板11の一つの辺から外側に突出して設ける。補
助絶縁板11はチツプ形容量8を装着した状態で
全体に特に図示しないが例えばエポキシ樹脂等を
コーテイングし、絶縁層を被覆する。
That is, conductive layers 16 and 17 are formed on both ends of the auxiliary insulating plate 11, and resistor layers 12 and 13 are formed, one end of which is in contact with the conductive layers 16 and 17, respectively. Conductive layers 14 and 15 for connecting the resistor layers 12 and 13 in series are formed at the other end of each of the resistor layers 12 and 13, and the electrodes 8A and 8B of the chip capacitor 8 are formed on the conductive layers 14 and 15. Solder the
A chip capacitor 8 is connected in series between resistor layers 12 and 13. According to this connection structure, a feedback circuit similar to the feedback circuit shown in FIG. 3 is constructed. On the other hand, in this invention, terminals 18 and 19 are attached to conductive layers 16 and 17. These terminals 18 and 19 are provided to protrude outward from one side of the auxiliary insulating plate 11. The auxiliary insulating plate 11 is coated with, for example, epoxy resin or the like, although not particularly shown, with the chip-type capacitor 8 mounted thereon, to cover it with an insulating layer.

この端子18と19を主絶縁板に装着した高周
波増幅用能動素子3の出力側端子4と入力側端子
6に接続する。
These terminals 18 and 19 are connected to the output side terminal 4 and input side terminal 6 of the high frequency amplification active element 3 mounted on the main insulating plate.

このように構成することにより補助絶縁板11
に形成した複数の抵抗体層12,13は互に直列
接続されるから、これら抵抗体層12と13を直
列接続する導電層16と14及び15と17の各
相互間において並列容量が存在したとしても、そ
の並列容量は互に直列接続されて端子18と19
の間で見ると並列容量を小さくすることができ
る。
With this configuration, the auxiliary insulating plate 11
Since the plurality of resistor layers 12 and 13 formed in the above are connected in series, parallel capacitance existed between the conductive layers 16 and 14 and 15 and 17 that connect the resistor layers 12 and 13 in series. Even if the parallel capacitance is connected in series with each other, terminals 18 and 19
The parallel capacitance can be reduced by looking between

また端子18と19を突設し、この端子18と
19によつて補助絶縁板11を主絶縁板に垂直に
植設する構造としたから抵抗体層12,13とア
ース導体7との間の浮遊容量を小さくすることが
できる。
In addition, since the terminals 18 and 19 are provided in a protruding manner, and the auxiliary insulating plate 11 is installed perpendicularly to the main insulating plate by means of these terminals 18 and 19, the connection between the resistor layers 12, 13 and the ground conductor 7 is Stray capacitance can be reduced.

「考案の作用効果」 以上説明したようにこの考案によれば帰還抵抗
器が持つ並列容量の値を小さくし、また帰還抵抗
器の浮遊容量を小さくすることができる。
"Operations and Effects of the Invention" As explained above, according to this invention, the value of the parallel capacitance of the feedback resistor can be reduced, and the stray capacitance of the feedback resistor can be reduced.

よつてこの考案の構造によれば高周波帰還増幅
器の周波数特性を広い帯域にわたつて平坦な増幅
特性にすることができる。
Therefore, according to the structure of this invention, the frequency characteristics of the high frequency feedback amplifier can be made to be flat amplification characteristics over a wide band.

また帰還抵抗を主絶縁板の上に植設したからア
ースとの間の容量つまり浮遊容量を小さくするこ
とができる。よつてこれによつても増幅素子3の
利得を広い帯域にわたつて平坦化することができ
る。
Furthermore, since the feedback resistor is installed on the main insulating plate, the capacitance between the feedback resistor and the ground, that is, the stray capacitance, can be reduced. Therefore, this also makes it possible to flatten the gain of the amplifying element 3 over a wide band.

またこの考案によれば帰還回路の一辺が補助絶
縁板に装着されるから、組立が容易となる。また
一つの補助絶縁板が植設される構造のため機械的
な強度も強く得られる利点もある。
Furthermore, according to this invention, one side of the feedback circuit is attached to the auxiliary insulating plate, which facilitates assembly. Furthermore, since the structure includes one auxiliary insulating plate, it also has the advantage of being highly mechanically strong.

なお上述の実施例では補助絶縁板11に二つの
抵抗体層12,13を形成した場合を説明した
が、その数は二つに限られるものでないことは容
易に理解できよう。
In the above embodiment, the case where two resistor layers 12 and 13 are formed on the auxiliary insulating plate 11 has been described, but it is easy to understand that the number is not limited to two.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図はこの考案の一実施例を説明するための
斜視図、第2図は従来技術を説明するための斜視
図、第3図は高周波帰還増幅器の電気的な回路構
造を説明するための接続図である。 3:高周波増幅用能動素子、4:出力側端子、
6:入力側端子、7:アース導体、8:チツプ形
容量、11:補助絶縁板、12,13:抵抗体
層、14,15,16,17:導電層、18,1
9:端子。
Fig. 1 is a perspective view for explaining an embodiment of this invention, Fig. 2 is a perspective view for explaining the prior art, and Fig. 3 is a perspective view for explaining the electrical circuit structure of a high frequency feedback amplifier. It is a connection diagram. 3: Active element for high frequency amplification, 4: Output side terminal,
6: Input side terminal, 7: Earth conductor, 8: Chip type capacitor, 11: Auxiliary insulating plate, 12, 13: Resistor layer, 14, 15, 16, 17: Conductive layer, 18, 1
9: Terminal.

Claims (1)

【実用新案登録請求の範囲】 A 絶縁板の一板面に入力端子と出力端子が形
成され、これら端子に高周波増幅用能動素子が
接続された主絶縁基板と、 B 絶縁板の一板面の直線上に複数の抵抗体層に
分割して形成され、かつこれら複数の抵抗体層
の両端にそれぞれ導電層が形成された補助絶縁
板と、 C 上記複数の抵抗層の相対する導電層をチツプ
形容量素子で直列接続して成る帰還抵抗器と、 D この帰還抵抗器の両端の導電層からそれぞれ
導出され、上記高周波増幅用能動素子の入力端
子と出力端子にそれぞれ接続される端子と、 を有し、これらの端子により上記主絶縁基板上に
上記補助絶縁板を垂直に植設して成る高周波帰還
増幅器。
[Scope of Claim for Utility Model Registration] A. A main insulating substrate in which an input terminal and an output terminal are formed on one surface of an insulating plate, and an active element for high frequency amplification is connected to these terminals, and B. A main insulating substrate on one surface of an insulating plate. An auxiliary insulating plate formed by dividing into a plurality of resistor layers on a straight line and having a conductive layer formed at both ends of each of the plurality of resistor layers; a feedback resistor formed by series-connected capacitive elements; and the auxiliary insulating plate is vertically planted on the main insulating board through these terminals.
JP4791686U 1986-03-31 1986-03-31 Expired JPH0328583Y2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4791686U JPH0328583Y2 (en) 1986-03-31 1986-03-31

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4791686U JPH0328583Y2 (en) 1986-03-31 1986-03-31

Publications (2)

Publication Number Publication Date
JPS62159010U JPS62159010U (en) 1987-10-08
JPH0328583Y2 true JPH0328583Y2 (en) 1991-06-19

Family

ID=30868962

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4791686U Expired JPH0328583Y2 (en) 1986-03-31 1986-03-31

Country Status (1)

Country Link
JP (1) JPH0328583Y2 (en)

Also Published As

Publication number Publication date
JPS62159010U (en) 1987-10-08

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