JPH03280458A - Electronic component provided with lead - Google Patents
Electronic component provided with leadInfo
- Publication number
- JPH03280458A JPH03280458A JP8004990A JP8004990A JPH03280458A JP H03280458 A JPH03280458 A JP H03280458A JP 8004990 A JP8004990 A JP 8004990A JP 8004990 A JP8004990 A JP 8004990A JP H03280458 A JPH03280458 A JP H03280458A
- Authority
- JP
- Japan
- Prior art keywords
- metal layer
- brazing material
- metallized metal
- lead terminal
- external lead
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000005219 brazing Methods 0.000 claims abstract description 61
- 229910052751 metal Inorganic materials 0.000 claims abstract description 53
- 239000002184 metal Substances 0.000 claims abstract description 53
- 239000010931 gold Substances 0.000 claims abstract description 21
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims abstract description 15
- 229910052738 indium Inorganic materials 0.000 claims abstract description 14
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims abstract description 14
- 229910052737 gold Inorganic materials 0.000 claims abstract description 13
- 239000000945 filler Substances 0.000 claims 1
- 239000000463 material Substances 0.000 abstract description 53
- 239000004065 semiconductor Substances 0.000 abstract description 24
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 abstract description 9
- 229910052721 tungsten Inorganic materials 0.000 abstract description 9
- 239000010937 tungsten Substances 0.000 abstract description 9
- 229910045601 alloy Inorganic materials 0.000 abstract description 7
- 239000000956 alloy Substances 0.000 abstract description 7
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 abstract description 6
- 229910052750 molybdenum Inorganic materials 0.000 abstract description 6
- 239000011733 molybdenum Substances 0.000 abstract description 6
- 229910000833 kovar Inorganic materials 0.000 abstract description 4
- 238000000034 method Methods 0.000 abstract description 4
- 230000002093 peripheral effect Effects 0.000 abstract description 2
- 229910001020 Au alloy Inorganic materials 0.000 abstract 1
- 239000000758 substrate Substances 0.000 description 14
- 239000000919 ceramic Substances 0.000 description 13
- 238000005260 corrosion Methods 0.000 description 10
- 230000007797 corrosion Effects 0.000 description 10
- 238000012360 testing method Methods 0.000 description 10
- 229910000679 solder Inorganic materials 0.000 description 9
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 8
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 8
- 229910052709 silver Inorganic materials 0.000 description 8
- 239000004332 silver Substances 0.000 description 8
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 5
- 239000010949 copper Substances 0.000 description 5
- JEIPFZHSYJVQDO-UHFFFAOYSA-N iron(III) oxide Inorganic materials O=[Fe]O[Fe]=O JEIPFZHSYJVQDO-UHFFFAOYSA-N 0.000 description 5
- 238000002844 melting Methods 0.000 description 5
- 230000008018 melting Effects 0.000 description 5
- 238000011156 evaluation Methods 0.000 description 4
- 239000000843 powder Substances 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000012777 electrically insulating material Substances 0.000 description 3
- 229910052759 nickel Inorganic materials 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 238000007747 plating Methods 0.000 description 3
- 239000000047 product Substances 0.000 description 3
- 238000005476 soldering Methods 0.000 description 3
- 229910017709 Ni Co Inorganic materials 0.000 description 2
- 229910000990 Ni alloy Inorganic materials 0.000 description 2
- 229910003267 Ni-Co Inorganic materials 0.000 description 2
- 229910003262 Ni‐Co Inorganic materials 0.000 description 2
- 238000002845 discoloration Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000011572 manganese Substances 0.000 description 2
- 238000013508 migration Methods 0.000 description 2
- 230000005012 migration Effects 0.000 description 2
- 239000003960 organic solvent Substances 0.000 description 2
- 235000012771 pancakes Nutrition 0.000 description 2
- 230000009257 reactivity Effects 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 238000007789 sealing Methods 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 229910017944 Ag—Cu Inorganic materials 0.000 description 1
- 229910000531 Co alloy Inorganic materials 0.000 description 1
- 241000016649 Copaifera officinalis Species 0.000 description 1
- 239000004859 Copal Substances 0.000 description 1
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 description 1
- 239000005751 Copper oxide Substances 0.000 description 1
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 description 1
- 241000255628 Tabanidae Species 0.000 description 1
- OFLYIWITHZJFLS-UHFFFAOYSA-N [Si].[Au] Chemical compound [Si].[Au] OFLYIWITHZJFLS-UHFFFAOYSA-N 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 229910000431 copper oxide Inorganic materials 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- QYHNIMDZIYANJH-UHFFFAOYSA-N diindium Chemical compound [In]#[In] QYHNIMDZIYANJH-UHFFFAOYSA-N 0.000 description 1
- 238000007606 doctor blade method Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 239000006023 eutectic alloy Substances 0.000 description 1
- 239000012467 final product Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 238000004080 punching Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 239000003566 sealing material Substances 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
Landscapes
- Lead Frames For Integrated Circuits (AREA)
Abstract
Description
【発明の詳細な説明】
（産業上の利用分野）
本発明は外部リード端子を有する電子部品、具体的には
半導体素子収納用パンケージやハイブリッドＩＣ用配線
基板等のリード付き電子部品の改良に関するものである
。DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application) The present invention relates to the improvement of electronic components having external lead terminals, specifically leaded electronic components such as semiconductor element storage pancakes and wiring boards for hybrid ICs. It is.
（従来の技術）
従来、リード付き電子部品、例えば半導体素子を収容す
るための半導体素子収納用パッケージは、通常セラミッ
クス等の電気絶縁材料から成り、その上面の略中央部に
半導体素子を収容するための凹部及び該凹部周辺から周
縁部にかけて導出されたタングステン（−）、モリブデ
ン（ＭＯ）等の高融点金属粉末から成るメタライズ金属
層を有する絶縁基体と、半導体素子を外部回路に電気的
に接続するために前記メタライズ金属層に銀ロウ（Ａｇ
−Ｃｕ合金）を介しロウ材は取着された外部リード端子
と、蓋体とから構成されており、絶縁基体の凹部底面に
半導体素子を取着固定し、半導体素子の各電極とメタラ
イズ金属層とをボンディングワイヤを介し電気的に接続
するとともに絶縁基体上面に蓋体をガラス、樹脂等の封
止材により接合させ、内部に半導体素子を気密に封止す
ることによって半導体装置となる。(Prior Art) Conventionally, a package for accommodating a semiconductor element for accommodating an electronic component with leads, such as a semiconductor element, is usually made of an electrically insulating material such as ceramics, and a package for accommodating a semiconductor element in the approximate center of the upper surface thereof. electrically connects the semiconductor element to an external circuit and an insulating substrate having a recess and a metallized metal layer made of high melting point metal powder such as tungsten (-) and molybdenum (MO) derived from the periphery of the recess to the periphery. Therefore, silver solder (Ag
The brazing material is made up of an external lead terminal attached to the soldering material (-Cu alloy) and a lid body, and a semiconductor element is attached and fixed to the bottom of the recess of the insulating base, and each electrode of the semiconductor element and a metallized metal layer are connected to each other. A semiconductor device is obtained by electrically connecting these through bonding wires, bonding a lid to the top surface of an insulating base using a sealing material such as glass or resin, and hermetically sealing a semiconductor element inside.
（発明が解決しようとする！！題）
しかし乍ら、この従来の半導体素子収納用パンケージは
外部リード端子をメタライズ金属層ヘロウ付けするのに
銀ロウ（Ａｇ−Ｃｕ合金）を使用しており、該銀ロウは
ロウ材は後、大気中に含まれる水分等が付着すると銀ロ
ウ中の銅（Ｃｕ）が酸化され、銅（Ｃｕ）の酸化物（錆
）を形成して変色することがある。(Problem to be solved by the invention!!) However, this conventional semiconductor element storage pancase uses silver solder (Ag-Cu alloy) to solder the external lead terminals to the metallized metal layer. After the silver solder is soldered, if moisture in the atmosphere adheres to it, the copper (Cu) in the silver solder may oxidize, forming copper (Cu) oxides (rust) and causing discoloration. .
また前記銅の酸化物（錆）は導電性で、且つ拡散し易い
という性質を有しているため多数の外部リード端子が近
接してロウ付けされている場合には、前記錆の拡散によ
り隣接する外部リード端子が短絡し、その結果、半導体
装置としての機能が喪失してしまうという欠点も有する
。In addition, the copper oxide (rust) is conductive and easily diffuses, so when many external lead terminals are brazed in close proximity, the rust may spread to the adjacent areas. Another drawback is that the external lead terminals connected to the semiconductor device may be short-circuited, resulting in a loss of functionality as a semiconductor device.
更に、銀ロウは主成分が銀（Ａｇ）であり、該銀（Ａｇ
）はエレクトロマイグレーション（金属原子の移行）を
起こし易い金属であることから内部に収容する半導体素
子を作動させた際、ロウ材に電圧が印加されるとロウ材
を構成する銀（Ａｇ）が絶縁基体表面を移行し、その結
果、隣接する外部リード端子間が前記銀（Ａｇ）の移行
により短絡して半導体装置としての機能が喪失してしま
うという欠点も有していた。Furthermore, the main component of silver wax is silver (Ag).
) is a metal that easily causes electromigration (migration of metal atoms), so when a voltage is applied to the brazing material when the semiconductor element housed inside is activated, the silver (Ag) that makes up the brazing material becomes insulating. Another drawback is that the silver (Ag) migrates over the surface of the substrate, resulting in a short circuit between adjacent external lead terminals due to the migration of silver (Ag), resulting in a loss of functionality as a semiconductor device.
（発明の目的）
本発明者等は上記欠点に鑑み種々の実験を行った結果、
金（八〇）にインジウム（Ｉｎ）を所定量含有させて成
る合金をロウ材として使用した場合、外部リード端子を
絶縁基体に設けたメタライズ金属層上に強固にロウ付は
取着することが可能となると共に、ロウ材自身の酸化及
びエレクトロマイグレーションの発生を皆無となし得る
ことを知見した。(Object of the Invention) The present inventors conducted various experiments in view of the above drawbacks, and as a result,
When an alloy made of gold (80) containing a predetermined amount of indium (In) is used as a brazing material, the external lead terminal cannot be firmly brazed onto the metallized metal layer provided on the insulating base. The inventors have discovered that it is possible to eliminate oxidation and electromigration of the brazing material itself.
本発明は上記知見に基づき、外部リード端子のロウ付は
強度が極めて強く、且つ電子部品としての機能を喪失す
るようなロウ材の酸化及びエレクトロマイグレーション
の発生を皆無となした高信顧性のリード付き電子部品を
提供することをその目的とするものである。The present invention is based on the above findings, and the present invention has been developed to provide highly reliable brazing for external lead terminals that is extremely strong and free from oxidation and electromigration of the brazing material that would cause loss of function as an electronic component. Its purpose is to provide electronic components with leads.
（課題を解決するための手段）
本発明は絶縁基体表面に被着させたメタライズ金属層に
、金（Ａｕ ）にインジウム（Ｉｎ ）を０．１ 乃至
１５．０重量％含有させて成るロウ材を介して外部リー
ド端子を取着したことを特徴とするものである。(Means for Solving the Problems) The present invention provides a brazing material comprising gold (Au) containing 0.1 to 15.0% by weight of indium (In) in a metallized metal layer deposited on the surface of an insulating substrate. It is characterized in that an external lead terminal is attached via the .
（実施例）
次に本発明を添付図面に示す実施例に基づき詳細に説明
する。(Example) Next, the present invention will be described in detail based on an example shown in the accompanying drawings.
第１図及び第２図は本発明のリード付き電子部品として
半導体素子収納用パッケージを例に採って示したもので
あり、１はアルミナセラミックス等の電気絶縁材料から
成る絶縁基体、２は同じく電気絶縁材料より成る蓋体で
ある。この絶縁基体１と蓋体２とで半導体素子を収容す
るための絶縁容器が構成される。Figures 1 and 2 show an example of a package for housing a semiconductor element as an electronic component with leads of the present invention, and 1 is an insulating base made of an electrically insulating material such as alumina ceramics, and 2 is an electrically insulating base as well. The lid is made of an insulating material. This insulating base 1 and lid 2 constitute an insulating container for accommodating a semiconductor element.
前記絶縁基体ｌはその上面中央部に半導体素子を収容す
るための凹部１ａが設けてあり、該凹部１ａ底面には半
導体素子３が金−シリコン（＾ｕ−Ｓｉ）共晶合金や銀
（Ａｇ）系エポキシ樹脂等の接着材を介し取着される。The insulating substrate 1 has a recess 1a in the center of its upper surface for accommodating a semiconductor element, and a semiconductor element 3 is formed on the bottom of the recess 1a using gold-silicon (^u-Si) eutectic alloy or silver (Ag). ) type epoxy resin or other adhesive.
尚、前記絶縁基体１は、例えばアルミナセラミックス等
の原料粉末に適当な有機溶剤、溶媒を添加混合して泥漿
状となすとともにこれをドクターブレード法を採用する
ことによってセラミックグリーンシート（セラミック生
シート）を形成し、しかる後、前記セラミック生シート
に適当な打ち抜き加工を施すとともに複数枚積層し、高
温（１５００℃）で焼成することによって製作される。The insulating substrate 1 is made by adding and mixing a suitable organic solvent or solvent to a raw material powder such as alumina ceramics to form a slurry, and then using a doctor blade method to form a ceramic green sheet (ceramic raw sheet). After that, the raw ceramic sheet is subjected to an appropriate punching process, a plurality of sheets are laminated, and the ceramic sheet is fired at a high temperature (1500° C.).
前記絶縁基体１はその凹部１ａ周辺より周縁部にかけて
メタライズ金属層４が形成されており、該メタライズ金
属層４の凹部１ａ周辺部には半導体素子３の電極がボン
ディングワイヤ５を介し電気的に接続され、またメタラ
イズ金属層４の絶縁基体１周縁部にはコパール（Ｆｅ−
Ｎｉ−Ｃｏ合金）や４２Ａ１１゜ｙ（ｒｅ−Ｎｉ合金）
等の金属から成る外部リード端子６がロウ材７を介し取
着される。A metallized metal layer 4 is formed from the periphery of the recess 1a to the peripheral edge of the insulating substrate 1, and the electrode of the semiconductor element 3 is electrically connected to the periphery of the recess 1a of the metallized metal layer 4 via a bonding wire 5. Copal (Fe-
Ni-Co alloy) and 42A11゜y (re-Ni alloy)
An external lead terminal 6 made of a metal such as the like is attached via a brazing material 7.
前記メタライズ金属層４はタングステン（−）、モリブ
デン（Ｍｏ）、マンガン（Ｍｎ）等の高融点金属粉末か
ら成り、例えば従来周知のスクリーン印刷法等の厚膜手
法を採用することによって絶縁基体１に被着形成される
。The metallized metal layer 4 is made of high melting point metal powder such as tungsten (-), molybdenum (Mo), manganese (Mn), etc., and is applied to the insulating substrate 1 by employing a thick film method such as a conventionally known screen printing method. Adhesion is formed.
また前記メタライズ金属層４に外部リード端子６をロウ
付は取着するロウ材７は金（Ａｕ）にインジウム（Ｉｎ
）を０．１乃至１５．０重量％含有させた合金から成り
、該合、金はメタライズ金属層４のタングステン（す、
モリブデン（ＭＯ）等と、また外部リード端子６のコバ
ール（Ｆｅ−Ｎｉ−Ｃｏ合金） 、４２Ａ１１ｏｙ（Ｆ
ｅ−Ｎｉ合金）等と極めて繻れ性（反応性）がよく、外
部リード端子６をメタライズ金属Ｎ４に極めて強固にロ
ウ付は取着することができる。Further, the soldering material 7 for brazing or attaching the external lead terminal 6 to the metallized metal layer 4 is made of gold (Au), indium (Indium), etc.
) in an alloy containing 0.1 to 15.0% by weight of tungsten (
Molybdenum (MO), etc., and Kovar (Fe-Ni-Co alloy) of the external lead terminal 6, 42A11oy (F
It has extremely good tenacity (reactivity) such as e-Ni alloy), and the external lead terminal 6 can be extremely firmly attached to the metallized metal N4 by brazing.
また前記ロウ材７はそれ自身を構成する金（＾Ｕ）及び
インジウム（Ｉｎ）の各々が化学的に安定で耐蝕性に優
れ、且つエレクトロマイグレーションを起こし難い金属
であることがらロウ材７に大気中に含まれる水分等が付
着したとしても導電性の錆を発生することはなく、また
内部に収容する半導体素子３を作動させた際等において
ロウ材７に電圧が印加されたとしてもエレクトロマイグ
レーションを起こすことも一切ない、従って、多数の外
部リード端子６が近接して取着されているとしても各外
部リード端子６間は短絡することがなく、絶縁を維持す
ることができる。In addition, since the brazing material 7 itself is composed of gold (^U) and indium (In), each of which is chemically stable and has excellent corrosion resistance, and is a metal that does not easily cause electromigration, the brazing material 7 is exposed to the atmosphere. Even if the moisture contained therein adheres, conductive rust will not occur, and electromigration will not occur even if a voltage is applied to the brazing material 7 when operating the semiconductor element 3 housed inside. Therefore, even if a large number of external lead terminals 6 are attached close to each other, there will be no short circuit between the external lead terminals 6, and insulation can be maintained.
尚、前記ロウ材７において主成分としての金（Ａｕ）に
含有されるインジウム（Ｉｎ）はロウ材７の融点を下げ
、外部リード端子６をメタライズ金属層４にロウ付けす
る際の作業性を容易とするとともにロウ材７の硬度を上
げ、外部リード端子６とメタライズ金属層４の接合強度
を向上させるための成分であり、その含有量が０．１重
量％未満であれば前記性質は付与されず、また１５．０
重量％を越えるとロウ材７が硬く成り過ぎ、ロウ材の加
工性が悪くなるとともに外部リード端子６とメタライズ
金属層４との接合強度が低下してしまう。そのため金（
Ａｕ）に含有させるインジウム（Ｉｎ）はその含有量が
０．１乃至１５．０重量％の範囲に限定される。Note that indium (In) contained in gold (Au) as a main component in the brazing material 7 lowers the melting point of the brazing material 7 and improves workability when brazing the external lead terminal 6 to the metallized metal layer 4. It is a component for increasing the hardness of the brazing material 7 and improving the bonding strength between the external lead terminal 6 and the metallized metal layer 4, and if its content is less than 0.1% by weight, the above properties are imparted. Not done and 15.0
If it exceeds % by weight, the brazing material 7 becomes too hard, the workability of the brazing material becomes poor, and the bonding strength between the external lead terminal 6 and the metallized metal layer 4 decreases. Therefore, money (
The content of indium (In) contained in Au) is limited to a range of 0.1 to 15.0% by weight.
また前記絶縁基体１の上面には電気絶縁性材料から成る
蓋体２がガラス、樹脂等の封止部材を介して取着され、
これによって半導体素子収納用パンケージの内部は外気
から完全に気密に封止され、最終製品である半導体装置
となる。Further, a lid body 2 made of an electrically insulating material is attached to the upper surface of the insulating base 1 via a sealing member such as glass or resin.
This completely hermetically seals the inside of the semiconductor element storage pancake from the outside air, resulting in a semiconductor device as a final product.
かくして本発明のリード付き電子部品によれば、金（Ａ
ｕ）にインジウム（Ｉｎ）を０．１乃至１５．０重量％
含有させたメタライズ金属層と外部リード端子の両方に
濡れ性（反応性）が良く、且つ化学的に安定であるロウ
材を使用して絶縁基体表面に被着させたメタライズ金属
層に外部リード端子を取着したことから外部リード端子
のロウ付は強度を極めて強固として、且つロウ４イに変
色や電子部品としての機能を喪失するような導電性の錆
及びエレクトロマイグレーションの発生を皆無となすこ
とができる。Thus, according to the leaded electronic component of the present invention, gold (A
u) 0.1 to 15.0% by weight of indium (In)
The external lead terminal is attached to the metalized metal layer that is adhered to the surface of the insulating substrate using a brazing material that has good wettability (reactivity) and is chemically stable for both the metalized metal layer and the external lead terminal. As a result, the strength of brazing the external lead terminals is extremely strong, and there is no conductive rust or electromigration that would cause discoloration of the solder wire or loss of its function as an electronic component. I can do it.
（実験例） 次に本発明の作用効果を実験例に基づき説明する。(Experiment example) Next, the effects of the present invention will be explained based on experimental examples.
（１）評価試料
まず出発原料として金（Ａｕ）にインジウム（Ｉｎ）を
第１表に示す組成となるように秤量するとともにこれを
加熱溶融し、合金化させてロウ材試料を得る。(1) Evaluation sample First, as starting materials, gold (Au) and indium (In) are weighed so as to have the composition shown in Table 1, and then heated and melted to form an alloy to obtain a brazing material sample.
尚、試料番号１６は本発明品と比較するための比較試料
であり、従来一般に使用されている銀ロウ材（銀ニア２
．Ｏ重量％、銅：２Ｂ、０重量％）である。In addition, sample number 16 is a comparison sample for comparing with the product of the present invention, and is made of silver brazing material (silver near 2) which is commonly used in the past.
．． O weight %, copper: 2B, 0 weight %).
そしてこれらの評価試料を使用して下記の評価テストを
行った。その結果を第１表に示す。The following evaluation tests were conducted using these evaluation samples. The results are shown in Table 1.
（ＩＩ）評価テスト
（ａ）外部リード 子ロウ け 度テストアルミナ質セ
ラミックスから成るセラミック生シート上面にタングス
テン（−）粉末に有機溶剤、溶媒を添加混合して得たメ
タライズペーストを長さ０．５ｎ＋ｍ 、幅０．２ｍｍ
、厚さ２０μ−のパターンに印刷（２０個のパターン
を印刷）するとともにこれを還元雰囲気中（窒素−水素
雰囲気）中、約１５００℃の温度で焼成し、表面にタン
グステンメタライズ金属層を被着させたセラミック基板
を準備する。(II) Evaluation test (a) External lead brazing strength test A metallized paste obtained by adding and mixing tungsten (-) powder with an organic solvent and a solvent is placed on the top surface of a raw ceramic sheet made of alumina ceramic to a length of 0.5n+m. , width 0.2mm
, a 20 μ-thick pattern was printed (printed 20 patterns) and fired at a temperature of approximately 1500°C in a reducing atmosphere (nitrogen-hydrogen atmosphere) to deposit a tungsten metallized metal layer on the surface. Prepare a ceramic substrate.
次に前記メタライズ金属層上に幅０．５ｍｍ 、長さ３
０．０ｍｍ、厚さ０．２ｍｍのコバール（Ｐｅ−Ｎｉ−
Ｃｏ合金）から成る外部リード端子の一端を第１表に示
すロウ材試料を使用して約９００℃の温度でロウ付けし
、そのロウ付は状態を顕微鏡により観察するとともに外
部リード端子のロウ付は部と反対の一端をロウ付は面に
対し垂直方向に毎秒０ 、２ｍｍで張力を増加させなが
ら引っ張り、外部リード端子がメタライズ金属層より剥
がれた際の全荷重を測定し、その平均値をロウ付は強度
とした。Next, a layer with a width of 0.5 mm and a length of 3 mm is placed on the metallized metal layer.
Kovar (Pe-Ni-
One end of the external lead terminal consisting of Co alloy) was brazed at a temperature of approximately 900°C using the brazing material sample shown in Table 1, and the brazing condition was observed using a microscope, and the brazing of the external lead terminal was Pull the end opposite to the soldering part in the direction perpendicular to the surface while increasing the tension at 0.2 mm per second, measure the total load when the external lead terminal peels off from the metallized metal layer, and calculate the average value. Brazing was determined by strength.
尚、前記外部リード端子のロウ付は面積は０．５ｍｎ＋
、長さ１．Ｏｍｍの０．５ｍ＋＊２となし、セラミック
基板に設けたタングステンメタライズ金属層及び外部リ
ード端子の外表面にはそれぞれニッケル（Ｎｉ）及び金
（Ａｕ）がメツキにより被着させである。The area of the external lead terminal with solder is 0.5mm+
, length 1. The tungsten metallized metal layer provided on the ceramic substrate and the outer surface of the external lead terminal are coated with nickel (Ni) and gold (Au) by plating, respectively.
（ｂ）虻！敗牲ｉス上
アルミナ質焼結体から成るセラミック基板上に幅１．Ｏ
ｍｍ 、長さ１０．０ｍｍの矩形状のメタライズ金属層
一対をその先端が０．２−一の間隔をもって対向するよ
うに被着形成（１０００対のメタライズ金属層を被着形
成）するとともに該メタライズ金属層の外表面全面に第
１表に示すロウ材試料を約９００℃の温度で加熱溶融さ
せて被着する。(b) Horseflies! A ceramic substrate made of an alumina sintered body is coated with a width of 1. O
A pair of rectangular metallized metal layers with a length of 10.0 mm are deposited so that their tips face each other with an interval of 0.2-1 (1000 pairs of metallized metal layers are deposited), and the metallization is performed. A brazing material sample shown in Table 1 is applied to the entire outer surface of the metal layer by heating and melting it at a temperature of about 900°C.
次に前記セラミック基板を表面温度が４５０℃に制御さ
れた熱板上に１分間載置した後、温度６５℃、湿度９５
χの恒温恒湿槽中にて各メタライズ金属層に交互に＋、
−の極性にて５ｖの直流電圧を所定時間印加してロウ材
試料の腐蝕を加速度的に行わせ、しかる後、各コラ材試
料の表面を顕微鏡で観察し、ロウ材試料が腐蝕、変色し
ているものの数を数えるとともに総数に対する腐蝕発生
率を求めた。Next, the ceramic substrate was placed on a hot plate whose surface temperature was controlled at 450°C for 1 minute, and then the temperature was 65°C and the humidity was 95°C.
Each metallized metal layer is alternately coated with +,
A DC voltage of 5V is applied for a predetermined period of time with the polarity of - to accelerate the corrosion of the brazing material sample.Then, the surface of each collage material sample is observed with a microscope to determine whether the brazing material sample has corroded or discolored. In addition to counting the number of items covered, we determined the corrosion incidence rate relative to the total number of items.
尚、前記メタライズ金属層はタングステン（賀）により
形成し、且つメタライズ金属層の表面にはニッケル（Ｎ
ｉ）をメツキにより被着させておいた。The metallized metal layer is made of tungsten, and the surface of the metallized metal layer is made of nickel (N).
i) was applied by plating.
（Ｃ） エレクトロマイグレーションテストアルミナ
質焼結体から成るセラミック基板上に幅１．０Ｉｌｌｌ
ｌ、長さ１０．０ｍｍの矩形状のメタライズ金属層一対
をその先端が０．１− の間隔をもって対向するよう
に被着形成（２０対のメタライズ金属層を被着形成）す
るとともに該メタライズ金属層の外表面全面に第１表に
示すロウ材試料を約９００℃の温度で加熱溶融させて被
着する。(C) Electromigration test 1.0Illm width on a ceramic substrate made of alumina sintered body
l. A pair of rectangular metallized metal layers each having a length of 10.0 mm is deposited so that their tips face each other with an interval of 0.1 mm (20 pairs of metallized metal layers are deposited), and the metallized metal A brazing material sample shown in Table 1 is applied to the entire outer surface of the layer by heating and melting it at a temperature of about 900°C.
次に前記各ロウ材試料が被着された一対のメタライズ金
属層間に５０μｌの純水を滴下させるとともに直流ｌＯ
ｖの電圧を印加し、各ロウ材試料にエレクトロマイグレ
ーションを加速度的に行わせ、該エレクトロマイグレー
ションにより両メタライズ金属層が短絡状態となるまで
の時間を求めるとともにその時間の長さを各ロウ材試料
の耐エレクトロマイグレーションの評価とした。Next, 50 μl of pure water was dropped between the pair of metallized metal layers to which each brazing material sample was adhered, and a direct current of lO
Applying a voltage of The electromigration resistance was evaluated.
尚、前記メタライズ金属層はタングステン（りにより形
成し、且つメタライズ金属層の表面にはニッケル（Ｎｉ
）をメツキにより被着させておいた。The metallized metal layer is formed of tungsten, and the surface of the metallized metal layer is coated with nickel (Ni).
) was applied by plating.
（以下、余白）
第１表から明らかなようにメタライズ金属層に外部リー
ド端子を従来の銀ロウを使用してロウ材は取着したもの
は外部リード端子のロウ材は強度が１０．２Ｋｇと強い
ものの耐腐蝕性テストにおける腐蝕発生率が１０００Ｈ
ｒのテストで４６．７χと高く、また耐エレクトロマイ
グレーションテストでも一対のメタライズ金属層間が短
絡する時間は５５秒と極めて短い。従って、従来め銀ロ
ウを使用したリード付き電子部品は外部リード端子のロ
ウ材は強度は強いもののロウ材の耐腐蝕性が劣り、且っ
ロウ材にエレクトロマイグレーションが極めて発生し昌
いものであることが判る。(The following is a blank space) As is clear from Table 1, when the external lead terminal is attached to the metallized metal layer using conventional silver solder, the strength of the external lead terminal brazing material is 10.2 kg. Corrosion occurrence rate in corrosion resistance test of strong items is 1000H
In the r test, it was as high as 46.7χ, and in the electromigration resistance test, the time for a short circuit between a pair of metallized metal layers was extremely short, 55 seconds. Therefore, in electronic components with leads that conventionally use silver solder, the brazing material of the external lead terminal is strong, but the corrosion resistance of the brazing material is poor, and electromigration is extremely likely to occur in the brazing material. I understand.
これに対し、本発明品は外部リード端子のロウ材は強度
が１４．０Ｋｇ以上であり、外部リード端子がメタライ
ズ金属層に極めて強固にロウ材は取着されていることが
判る。In contrast, in the product of the present invention, the brazing material of the external lead terminal has a strength of 14.0 kg or more, and it can be seen that the external lead terminal is extremely firmly attached to the metallized metal layer.
また本発明品は耐腐蝕性テストにおける腐蝕発生率も１
０００Ｈｒのテストで０．９％以下と低く、また耐エレ
クトロマイグレーションテストでも一対のメタライズ金
属層間が短絡する時間は１２００秒以上と極めて長い、
従って、本発明のリード付き電子部品は外部リード端子
のロウ材は強度が強いものであると同時にロウ材の耐腐
蝕性が優れ、且つロウ材にエレクトロマイグレーション
が殆ど発生しないものであることが判る。In addition, the product of the present invention has a corrosion incidence rate of 1 in a corrosion resistance test.
In the 000Hr test, it was as low as 0.9% or less, and in the electromigration resistance test, the time for a short circuit between a pair of metallized metal layers was extremely long, over 1200 seconds.
Therefore, it can be seen that in the leaded electronic component of the present invention, the brazing material of the external lead terminal is strong, the brazing material has excellent corrosion resistance, and almost no electromigration occurs in the brazing material. .
また特に、ロウ材として金（Ａｕ）にインジウム（Ｉｎ
）を０．５乃至５．０重量％含有させたものは外部リー
ド端子のロウ材は強度が１６．２Ｋｇ以上となり、外部
リード端子のロウ材は取着強度が極めて高いものとなる
ことが判る。In particular, gold (Au) and indium (In) are used as brazing materials.
) containing 0.5 to 5.0% by weight, the brazing material for the external lead terminal has a strength of 16.2 kg or more, which indicates that the brazing material for the external lead terminal has extremely high attachment strength. .
更に、ロウ材として金（八〇）にインジウム（Ｉｎ）を
１．０乃至３．０重量％含有させたものはロウ材の腐蝕
及びエレクトロマイグレーションの発生を皆無として、
且つ外部リード端子のロウ材は強度が１８．５Ｋｇ以上
となり、外部リード端子のロウ材は取着強度がより高い
ものとなることも判る。Furthermore, gold (80) containing 1.0 to 3.0% by weight of indium (In) as a brazing material has no corrosion or electromigration of the brazing material.
It can also be seen that the brazing material for the external lead terminal has a strength of 18.5 kg or more, and that the brazing material for the external lead terminal has a higher attachment strength.
尚、本発明においては、ロウ材のビッカース硬度を６０
（Ｈｖ）以下としてお（と絶縁基体に設けたメタライ
ズ金属層に外部リード端子をロウ材は取着する際、ロウ
材が絶縁基体と外部リード端子の熱膨張係数の相違に起
因して発生する応力を良好に吸収し、外部リード端子を
メタライズ金属層により強固にロウ材は取着することが
可能となることがらロウ材はそのビッカース硬度を６０
（Ｈｖ）以下としておくことが好ましい。In addition, in the present invention, the Vickers hardness of the brazing material is 60.
(Hv) or less (and when attaching the external lead terminal to the metallized metal layer provided on the insulating base, the brazing material may be generated due to the difference in thermal expansion coefficient between the insulating base and the external lead terminal. The brazing material has a Vickers hardness of 60 because it absorbs stress well and allows the external lead terminal to be firmly attached to the metallized metal layer.
(Hv) or less.
（発明の効果）
叙上の如く、本発明においては絶縁基体表面に被着させ
たメタライズ金属層に、金（Ａｕ）にインジウム（Ｉｎ
）を０．１乃至１５．０重量％含有させて成るロウ材を
介して外部リード端子を取着したことから外部リード端
子のロウ材は強度を極めて強固として、且つ電子部品と
しての機能を喪失するようなロウ材の酸化及ヒエレフト
ロマイグレーシリンの発生を皆無となすことができ、極
めて高信転性のリード付き電子部品となすことが可能と
なる。(Effect of the invention) As described above, in the present invention, gold (Au) and indium (Indium) are added to the metallized metal layer deposited on the surface of the insulating substrate.
) Since the external lead terminals are attached through a brazing material containing 0.1 to 15.0% by weight, the brazing material of the external lead terminals has extremely strong strength and loses its function as an electronic component. The oxidation of the brazing material and the generation of electromigration can be completely eliminated, making it possible to produce leaded electronic components with extremely high reliability.
第１図は本発明のリード付き電子部品として半導体素子
収納用パッケージを例に採った場合の断面図、第２図は
第１図に示すパッケージの要部平面図である。
ｌ：絶縁基体
４：
メタライズ金属層
６：外部リード端子
７：ロウ材FIG. 1 is a cross-sectional view of a package for housing a semiconductor element as an electronic component with leads of the present invention, and FIG. 2 is a plan view of the main part of the package shown in FIG. 1. l: Insulating base 4: Metallized metal layer 6: External lead terminal 7: Brazing material
Claims (1)
ｕ）にインジウム（Ｉｎ）を０．１乃至１５．０重量％
含有させて成るロウ材を介して外部リード端子を取着し
たことを特徴とするリード付き電子部品。Gold (A
u) 0.1 to 15.0% by weight of indium (In)
An electronic component with a lead, characterized in that an external lead terminal is attached via a brazing filler metal.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2080049A JP2742625B2 (en) | 1990-03-28 | 1990-03-28 | Electronic components with leads |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2080049A JP2742625B2 (en) | 1990-03-28 | 1990-03-28 | Electronic components with leads |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH03280458A true JPH03280458A (en) | 1991-12-11 |
| JP2742625B2 JP2742625B2 (en) | 1998-04-22 |
Family
ID=13707388
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2080049A Expired - Fee Related JP2742625B2 (en) | 1990-03-28 | 1990-03-28 | Electronic components with leads |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2742625B2 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5804908A (en) * | 1996-02-28 | 1998-09-08 | Nec Corporation | Enhancement in bonding strength in field emission electron source |
| US10622287B2 (en) | 2017-11-07 | 2020-04-14 | Fuji Electric Co., Ltd. | Semiconductor package |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0246751A (en) * | 1988-08-09 | 1990-02-16 | Tanaka Kikinzoku Kogyo Kk | Lead frame with solder for flat package |
-
1990
- 1990-03-28 JP JP2080049A patent/JP2742625B2/en not_active Expired - Fee Related
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0246751A (en) * | 1988-08-09 | 1990-02-16 | Tanaka Kikinzoku Kogyo Kk | Lead frame with solder for flat package |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5804908A (en) * | 1996-02-28 | 1998-09-08 | Nec Corporation | Enhancement in bonding strength in field emission electron source |
| US10622287B2 (en) | 2017-11-07 | 2020-04-14 | Fuji Electric Co., Ltd. | Semiconductor package |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2742625B2 (en) | 1998-04-22 |
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