JPH03276724A - Laser cvd apparatus - Google Patents
Laser cvd apparatusInfo
- Publication number
- JPH03276724A JPH03276724A JP7548290A JP7548290A JPH03276724A JP H03276724 A JPH03276724 A JP H03276724A JP 7548290 A JP7548290 A JP 7548290A JP 7548290 A JP7548290 A JP 7548290A JP H03276724 A JPH03276724 A JP H03276724A
- Authority
- JP
- Japan
- Prior art keywords
- laser
- sample
- thin film
- forming
- insulating material
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000001182 laser chemical vapour deposition Methods 0.000 claims abstract description 21
- 229910052751 metal Inorganic materials 0.000 claims abstract description 19
- 239000002184 metal Substances 0.000 claims abstract description 19
- 239000011810 insulating material Substances 0.000 claims abstract description 17
- 239000010409 thin film Substances 0.000 claims abstract description 16
- 239000010408 film Substances 0.000 claims abstract description 15
- 239000002994 raw material Substances 0.000 claims description 7
- 238000006243 chemical reaction Methods 0.000 claims description 6
- 238000006303 photolysis reaction Methods 0.000 claims description 4
- 229920002120 photoresistant polymer Polymers 0.000 claims description 4
- 238000010494 dissociation reaction Methods 0.000 claims description 3
- 208000018459 dissociative disease Diseases 0.000 claims description 3
- 230000001678 irradiating effect Effects 0.000 claims description 3
- 238000012360 testing method Methods 0.000 abstract description 3
- 230000015572 biosynthetic process Effects 0.000 abstract description 2
- 238000005229 chemical vapour deposition Methods 0.000 abstract description 2
- 239000005357 flat glass Substances 0.000 abstract description 2
- 239000010453 quartz Substances 0.000 abstract description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 2
- 239000011162 core material Substances 0.000 abstract 1
- 239000007789 gas Substances 0.000 description 7
- 238000000034 method Methods 0.000 description 5
- 230000010355 oscillation Effects 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- FQNHWXHRAUXLFU-UHFFFAOYSA-N carbon monoxide;tungsten Chemical group [W].[O+]#[C-].[O+]#[C-].[O+]#[C-].[O+]#[C-].[O+]#[C-].[O+]#[C-] FQNHWXHRAUXLFU-UHFFFAOYSA-N 0.000 description 2
- 239000012159 carrier gas Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 229910008940 W(CO)6 Inorganic materials 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000012937 correction Methods 0.000 description 1
- 238000004132 cross linking Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000011344 liquid material Substances 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000011824 nuclear material Substances 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 230000008016 vaporization Effects 0.000 description 1
Landscapes
- Electrodes Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Semiconductor Integrated Circuits (AREA)
Abstract
Description
【発明の詳細な説明】
［産業上の利用分野コ
本発明は、レーザＣＶＤ法によりＬＳＩ等に金属薄膜を
形成するレーザＣＶＤ装置に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a laser CVD apparatus for forming a metal thin film on an LSI or the like by a laser CVD method.
［従来の技術］ 近年、半導体集積回路（ＬＳＩ）上の回路変更。[Conventional technology] In recent years, circuits on semiconductor integrated circuits (LSI) have changed.
修正を目的として、レーザＣＶＤ法により金属薄膜を導
体配線状に選択的に形成する技術が注目され、研究及び
装置化の開発がなされて０る。−例をあげれば、タング
ステンカルボニルＷ（Ｃｏ）６を原料にし、Ａｒレーザ
又はＮｄ：ＹＡＧレーザの第２高調波を光源として、Ｌ
ＳＩ上にタングステン（Ｗ）配線を形成する方法が知ら
れて（する。For the purpose of correction, a technique of selectively forming a metal thin film in the form of conductor wiring by laser CVD has attracted attention, and research and development of equipment have been carried out. - For example, if tungsten carbonyl W(Co)6 is used as a raw material and the second harmonic of an Ar laser or Nd:YAG laser is used as a light source, L
A method of forming tungsten (W) wiring on SI is known.
また一方で、薄膜形成の為の核物質を光解離反応により
形成することを目的として、光源に紫外線レーザ光を用
いる試みもなされている。On the other hand, attempts have also been made to use ultraviolet laser light as a light source for the purpose of forming a nuclear material for forming a thin film through a photodissociation reaction.
［発明が解決しようとする課題］
しかしながら、これらのレーザＣＶＤ技術を用０た金属
薄膜形成方法・装置では、レーザＣＶＤ法で形成された
金属薄膜を保護するための手段を有していなかった。[Problems to be Solved by the Invention] However, these metal thin film forming methods and apparatuses using laser CVD technology do not have a means for protecting the metal thin film formed by laser CVD.
従って、上述した従来のレーザＣＶＤ装置では。Therefore, in the conventional laser CVD apparatus described above.
ＬＳＩの内部回路を変更する際、レーザＣＶＤ法により
形成された金属配線は露出状態となっている。この為に
、その金属配線の表面が酸化したり。When changing the internal circuit of an LSI, metal wiring formed by laser CVD is exposed. As a result, the surface of the metal wiring becomes oxidized.
あるいはＬＳＩの内部回路とレーザＣＶＤによって形成
された金属配線との結合部から水分が侵入するといった
原因から回路特性が劣化するおそれがあり、長期間テス
トする場合には問題とされていた。Alternatively, there is a risk that circuit characteristics may deteriorate due to moisture intrusion from the joint between the internal circuit of the LSI and the metal wiring formed by laser CVD, which has been considered a problem when testing for a long period of time.
また、液晶パネル上の配線パターンの修正への応用を考
えた場合には、液晶の劣化を防止するために、必ず修正
配線部が露出しない様な工夫をしなければならず、現状
の装置では適用できなかった。In addition, when considering the application for modifying the wiring pattern on a liquid crystal panel, in order to prevent deterioration of the liquid crystal, it is necessary to take measures to ensure that the repair wiring part is not exposed. Could not be applied.
そこで２本発明の技術的課題は、レーザＣＶＤ法で形成
された金属薄膜を保護するための保護膜形成手段を有す
るレーザＣＶＤ装置を得ることにある。Therefore, a second technical object of the present invention is to obtain a laser CVD apparatus having a protective film forming means for protecting a metal thin film formed by laser CVD.
［課題を解決するだめの手段］
本発明によれば、ＣＶＤ原料ガスと接触する試料表面上
に、紫外域及び可視域の２種類のレーザ光を照射する手
段を有し、前記ＣＶＤ原料ガスの光解離反応及び熱解離
反応を利用して、前記試料表面上のレーザ光照射部分に
選択的に金属薄膜を形成するレーザＣＶＤ装置において
、前記紫外域のレーザ光照射により硬化が進行する絶縁
材料を前記試料表面に供給する供給手段を備えることに
より前記金属薄膜上に絶縁膜を形成できるようにしたこ
とを特徴とするレーザＣＶＤ装置が得られる。[Means for Solving the Problems] According to the present invention, there is provided a means for irradiating two types of laser beams in the ultraviolet region and visible region onto the sample surface that comes into contact with the CVD raw material gas, and In a laser CVD device that selectively forms a metal thin film on the portion of the sample surface irradiated with laser light using a photodissociation reaction and a thermal dissociation reaction, an insulating material that is cured by the laser light irradiation in the ultraviolet region is used. There is obtained a laser CVD apparatus characterized in that an insulating film can be formed on the metal thin film by providing a supply means for supplying the sample to the surface of the sample.
［作用］
本発明のレーザＣＶＤ装置における前記供給手段は、紫
外線により硬化する絶縁材料をＣＶＤにより形成した金
属薄膜表面に供給する。そして。[Function] The supply means in the laser CVD apparatus of the present invention supplies an insulating material that is cured by ultraviolet rays to the surface of the metal thin film formed by CVD. and.
レーザＣＶＤ用の光源である紫外域のレーザ光の照射に
より、この絶縁材料から表面保護用の絶縁膜を必要な部
分のみに形成する。An insulating film for surface protection is formed from this insulating material only in necessary portions by irradiation with a laser beam in the ultraviolet region, which is a light source for laser CVD.
［実施例コ 次に１本発明について図面を参照して説明する。[Example code] Next, one embodiment of the present invention will be explained with reference to the drawings.
第１図は本発明の一実施例の構成を示す模式図である。FIG. 1 is a schematic diagram showing the configuration of an embodiment of the present invention.
本実施例によるレーザ発振装置３０では。In the laser oscillation device 30 according to this embodiment.
レーザＣＶＤ用の光源として、ＣＷ励起のＮｄ：ＹＡＧ
レーザあるいはＡｒレーザを用いるが、Ｎｄ：ＹＡＧレ
ーザの場合その第２高調波を利用する。そして、Ａｒレ
ーザあるいはＮｄ：ＹＡＧレーザの第２高調波の波長を
２逓倍すると紫外光を得ることができる。レーザ発振装
置３０は、可視域レーザ１１の他に、可動ミラー１２．
２逓倍用の波長変換器１３．ダイクロイックミラー１４
゜ビームエキスパンダ１５．ダイクロイックミラー１６
を含む。接眼部１７．ＣＣＤカメラ１８は試料５を観察
したり、撮影したりするためのものである。CW pumped Nd:YAG as a light source for laser CVD
A laser or an Ar laser is used, and in the case of an Nd:YAG laser, its second harmonic is used. Then, by doubling the wavelength of the second harmonic of the Ar laser or Nd:YAG laser, ultraviolet light can be obtained. In addition to the visible range laser 11, the laser oscillation device 30 includes a movable mirror 12.
Wavelength converter for doubling 13. dichroic mirror 14
゜Beam expander 15. dichroic mirror 16
including. Eyepiece section 17. The CCD camera 18 is used to observe and photograph the sample 5.
ＣＶＤ原料ガス１としてはタングステンカルボニルＷ（
Ｃｏ）６を使用する。このＣＶＤ原料ガス１は、Ｗ（Ｃ
ｏ）６の粉末を加熱して気化させることにより発生させ
る。なお、Ｗ（ＣＯ）６の飽和蒸気圧は６３℃で約Ｉ
Ｔｏｒｒである。試料５が装着されている密閉型のチェ
ンバ２内へはアルゴンＡｒをキャリアガスとして送り込
む。なお、キャリアガスを含めた全体の流量は２００〜
３００ＳＣＣＭ （標準ｃｃ／分）である。Tungsten carbonyl W (
Co)6 is used. This CVD raw material gas 1 is W(C
o) It is generated by heating and vaporizing the powder of 6. Note that the saturated vapor pressure of W(CO)6 is approximately I at 63°C.
Torr. Argon (Ar) is sent as a carrier gas into the closed chamber 2 in which the sample 5 is mounted. The total flow rate including carrier gas is 200~
300SCCM (standard cc/min).
チェンバ２内の試料５の表面へは、チェンバ２の表面に
設けられた石英製の窓ガラス３を通して。The surface of the sample 5 in the chamber 2 is accessed through a window glass 3 made of quartz provided on the surface of the chamber 2.
対物レンズ４により集光されたレーザ光を照射する。特
に、金属薄膜生成の初期段階では紫外光を用いて核とな
る物質の発生を容易にし９次にｘｙステージ１０を駆動
して試料５を動かしながら配線状に金属薄膜を形成する
段階で光源を可視レーザ光に切り換える。これは試料５
の表面に吸着された原料ガス１の分子のみが熱解離する
状態を利用して、空間的な選択性を高めるためである。A laser beam focused by the objective lens 4 is irradiated. In particular, in the initial stage of metal thin film formation, ultraviolet light is used to facilitate the generation of core substances, and then the light source is turned on at the stage of driving the xy stage 10 to move the sample 5 and forming the metal thin film in the form of wiring. Switch to visible laser light. This is sample 5
This is to improve spatial selectivity by utilizing the state in which only the molecules of the source gas 1 adsorbed on the surface of the material gas 1 are thermally dissociated.
なお、紫外光は、波長変換器１３により可視域レーザ１
１の出力を２逓倍することで容易に得られる。In addition, the ultraviolet light is converted into a visible range laser 1 by a wavelength converter 13.
This can be easily obtained by doubling the output of 1.
可動ミラー１２は可視域レーザ１２の出力を波長変換器
１３あるいはダイクロイックミラー１４のいずれか一方
に供給する切換え手段として作用する。必要な金属配線
をＣＶＤ法により形成した後。The movable mirror 12 functions as a switching means for supplying the output of the visible laser 12 to either the wavelength converter 13 or the dichroic mirror 14. After forming necessary metal wiring by CVD method.
その表面に絶縁材料７の保護膜を形成する工程へ移る。The process moves on to the step of forming a protective film of insulating material 7 on the surface.
絶縁材料７は液体のものを使用し、定量の供給かできる
吐出ポンプあるいはソレノイドを使用したバルブの開閉
などの手段（図示せず）で。The insulating material 7 is a liquid material, and a discharge pump that can supply a fixed amount or a means (not shown) such as opening and closing a valve using a solenoid is used.
試料５の表面に近接したノズル６から供給される。It is supplied from a nozzle 6 close to the surface of the sample 5.
紫外線の照射により硬化が進行する絶縁材料７としては
、ネガ型のフォトレジストの利用か考えられる。ネガ型
のレジストは、紫外光の照射により架橋反応が起こり、
紫外線を照射した部分にのみ絶縁膜を形成することがで
きる。光源としてＮｄ：ＹＡＧレーザのＱスイッチパル
スを考えると。As the insulating material 7, which is cured by irradiation with ultraviolet rays, a negative type photoresist may be used. Negative resists undergo a crosslinking reaction when exposed to ultraviolet light.
An insulating film can be formed only on the portions irradiated with ultraviolet rays. Considering the Q-switched pulse of an Nd:YAG laser as a light source.
波長２６６ｎｍの紫外光を平均出力１０ｍＷ以上で発生
させることができ、集光して照射する本実施例の場合に
はレジストを露光するのに充分である。Ultraviolet light with a wavelength of 266 nm can be generated with an average output of 10 mW or more, which is sufficient to expose the resist in the case of this embodiment in which the light is focused and irradiated.
また、レジストの分子量の大小をコントロールすること
により、試料表面の塗布膜厚を変えることかでき、絶縁
膜厚が適切となる様な制御が可能である。Furthermore, by controlling the molecular weight of the resist, the thickness of the coating film on the sample surface can be changed, and the thickness of the insulating film can be controlled to be appropriate.
なお１以上の説明では絶縁材料７を部分的に塗布するこ
とを仮定したが、試料５の形状が許せば。Note that in the above description, it was assumed that the insulating material 7 would be applied partially, but if the shape of the sample 5 allows it.
全面に塗布した絶縁材料に対して必要部分のみ紫外レー
ザ光照射により絶縁膜を形成した後、不要な絶縁材料は
洗浄により除去する方法も可能である。It is also possible to form an insulating film only on necessary portions of the insulating material coated on the entire surface by irradiating with ultraviolet laser light, and then remove unnecessary insulating material by cleaning.
第２図は本発明の第２の実施例の構成を示す模式図であ
る。本実施例では１発振装置３０において、紫外・可視
両波長域において同時に発振する紫外・可視同時発振レ
ーザ２０を用いている。FIG. 2 is a schematic diagram showing the configuration of a second embodiment of the present invention. In this embodiment, one oscillation device 30 uses an ultraviolet/visible simultaneous oscillation laser 20 that oscillates simultaneously in both ultraviolet and visible wavelength regions.
本実施例では、紫外・可視同時発振レーザ２０から紫外
レーザ、可視レーザの両方が同時に発生されることによ
り、光解離反応による初期（１ｎｉｔｊａｔｉｏｎ）段
階と熱解離反応による薄膜成長を同時に行うことができ
る。絶縁膜を形成する場合には。In this embodiment, since both the ultraviolet laser and the visible laser are simultaneously generated from the ultraviolet/visible simultaneous oscillation laser 20, the initial stage (1 nitjation) by the photodissociation reaction and the thin film growth by the thermal dissociation reaction can be performed simultaneously. . When forming an insulating film.
ＣＶＤ原料ガス１の供給を原料ガスＯＮ・ＯＦＦバルブ
２１により止めてＣＶＤ反応を停止した上で、紫外レー
ザにより硬化する絶縁材料７の塗布を行う。試料５上の
絶縁材料には紫外レーザと共に可視レーザも照射される
が、絶縁材料は紫外レザのみに反応するので第１の実施
例と同様に絶縁膜の形成が行える。After stopping the supply of the CVD raw material gas 1 using the raw material gas ON/OFF valve 21 to stop the CVD reaction, the insulating material 7 that is cured by an ultraviolet laser is applied. The insulating material on the sample 5 is irradiated with a visible laser as well as an ultraviolet laser, but since the insulating material reacts only to the ultraviolet laser, an insulating film can be formed in the same manner as in the first embodiment.
［発明の効果コ
以上説明したように本発明によれば、レーザＣＶＤ技術
を利用してＬＳＩの配線を修正した部分に、保護のため
の絶縁膜を同一装置上で形成できる手段を有するため、
配線修正したＬＳＩの信頼性を飛躍的に向上させ、長期
のテスト使用やサンプル出荷品としての使用を可能とす
るという効果がある。[Effects of the Invention] As explained above, according to the present invention, there is a means for forming, on the same device, an insulating film for protection on a portion where the wiring of an LSI is modified using laser CVD technology.
This has the effect of dramatically improving the reliability of an LSI whose wiring has been corrected, and making it possible to use it for long-term testing or as a sample shipment.
第１図は本発明の第１の実施例の構成を示す模式図、第
２図は本発明の第２の実施例の構成を示す模式図である
。
１、・・・原料ガス、２．・・・チェンバ、５．・・・
試料。
６、・・・ノズル、７．・・・絶縁材料。FIG. 1 is a schematic diagram showing the structure of a first embodiment of the invention, and FIG. 2 is a schematic diagram showing the structure of a second embodiment of the invention. 1. Raw material gas, 2. ...Chamber, 5. ...
sample. 6. Nozzle, 7. ...Insulating material.
Claims (2)
及び可視域の２種類のレーザ光を照射する手段を有し、
前記ＣＶＤ原料ガスの光解離反応及び熱解離反応を利用
して、前記試料表面上のレーザ光照射部分に選択的に金
属薄膜を形成するレーザＣＶＤ装置において、前記紫外
域のレーザ光照射により硬化が進行する絶縁材料を前記
試料表面に供給する供給手段を備えることにより前記金
属薄膜上に絶縁膜を形成できるようにしたことを特徴と
するレーザＣＶＤ装置。(1) It has a means for irradiating two types of laser light in the ultraviolet region and the visible region onto the sample surface that comes into contact with the CVD source gas,
In a laser CVD apparatus that selectively forms a metal thin film on a portion of the sample surface irradiated with a laser beam by utilizing a photodissociation reaction and a thermal dissociation reaction of the CVD raw material gas, curing is performed by the laser beam irradiation in the ultraviolet region. A laser CVD apparatus characterized in that an insulating film can be formed on the metal thin film by providing a supply means for supplying advancing insulating material to the sample surface.
前記絶縁材料としてネガ型のフォトレジストを用い、該
フォトレジストの分子量をコントロールすることにより
前記絶縁膜の厚さをコントロールすることを特徴とする
レーザＣＶＤ装置。(2) In the laser CVD apparatus according to claim (1),
A laser CVD apparatus characterized in that a negative photoresist is used as the insulating material, and the thickness of the insulating film is controlled by controlling the molecular weight of the photoresist.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2075482A JP2550742B2 (en) | 1990-03-27 | 1990-03-27 | Laser CVD equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2075482A JP2550742B2 (en) | 1990-03-27 | 1990-03-27 | Laser CVD equipment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH03276724A true JPH03276724A (en) | 1991-12-06 |
| JP2550742B2 JP2550742B2 (en) | 1996-11-06 |
Family
ID=13577555
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2075482A Expired - Fee Related JP2550742B2 (en) | 1990-03-27 | 1990-03-27 | Laser CVD equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2550742B2 (en) |
-
1990
- 1990-03-27 JP JP2075482A patent/JP2550742B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JP2550742B2 (en) | 1996-11-06 |
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