JPH03274723A - Organic metal vapor phase crystal growth device - Google Patents

Abstract

PURPOSE:To improve safety without use of group V hydride and without necessity of supply of excessive raw gas by using a group V simple substance as a group V element raw material and by using vapor generated through heating by introducing to a reaction tube. CONSTITUTION:A group III element raw material is introduced to a reaction tube 3 from an organic metal gas cylinder 2 using hydrogen gas as carrier gas. Meanwhile, a group V element raw material is provided as a simple substance 10 inside a group V element supply tower 8 and heated by a heater B9; thereby, generated vapor is introduced to the reaction tube 3 by carrier gas 11. Each raw material supplied in this way is heated, decomposed and reacted by heat of a wafer 4 put on a susceptor 5 which is heated by a heater A7 of an RF coil and deposits on the wafer 4 as a crystal. Thereby, the group V element raw material reacts with group III element raw material effectively, making supply of excessive raw material unnecessary and improving safety.

Description

DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a vapor phase crystal growth apparatus for growing crystals of m-v group compounds and the like.

[Conventional technology]

Figure 2 shows, for example, J, Electrochem, Soc,
, 116.1725 (1969). In the figure, (1) is a hydrogen cylinder, (2) is an organometallic cylinder, and (3) is a hydrogen cylinder. ) is the reaction tube, (4) is the wafer, (5>
is the susceptor, (6> is the exhaust gas outlet, (7) is the heater A,
(12> is a gas cylinder for V hydrogen hydride.

Next, the operation will be explained. The figure shows a gas phase crystal growth apparatus commonly called MOCVD method, from a hydrogen cylinder (1) to an organometallic cell (2) to a group V hydride casphone (12).
The raw material waste and carrier gas are introduced into the reaction tube (3), heated by the heater A (7), decomposed and reacted, and then deposited as crystals on the wafer (4) set on the susceptor (5). do. Excess gas is discharged from the waste outlet (6).

[Problem to be solved by the invention]

Conventional organometallic vapor phase crystal growth apparatuses were configured as described above, and as a source of group elements,
A3H3, PH3, etc.) must be used, and the toxicity of these gases is extremely strong, posing a major safety problem. Furthermore, since each raw material gas is first heated near the wafer and then decomposed and reacted, there is a large amount of unreacted waste, and there is a problem in that an excessive amount of raw material gas must be supplied compared to the required amount.

This invention was made in order to solve the above-mentioned problems, and it is an object of the present invention to obtain an organometallic vapor phase crystal growth apparatus that does not use group hydrides and does not require the supply of excessive raw material gas. With the goal.

[Means for Solving Problem 8] The organometallic vapor phase crystal growth apparatus according to the present invention is provided with a container containing a group V element, connected to a reaction tube, and capable of heating.

[Effect]

The organometallic vapor phase crystal growth apparatus according to the present invention uses a group (I) element alone as a group V element raw material, and the vapor generated by heating is introduced into a reaction tube.

〔Example〕

An embodiment of the present invention will be described below with reference to the drawings. 1st
In the figure, (1) is a hydrogen cylinder, (2) is an organometallic cylinder, (3) is a reaction tube (4) is a wafer, (5) is a susceptor, (6) is an exhaust gas outlet, (7) is a heater A, (8)
is a group V element supply tower, (9) is a heater B, (10) is a group V element, and (11) is a carrier gas for vapor of a group V element (lO).

Next, the operation will be explained.

The m-group raw material is introduced into the reaction tube (3) from an organometallic gas cylinder (2) using hydrogen gas as a carrier gas. on the other hand,
Group V raw materials are elemental elements in the Group ■ element supply tower (8).
) and heated by heater B (9), the generated steam is introduced into the reaction tube (3) by carrier gas (11). Each raw material supplied in this way is heated, decomposed, and reacted by the heat of the wafer (4) placed on the susceptor (5) heated by the heater A (7) of the RF coil, and is heated, decomposed, and reacted with the wafer (4). ) precipitates as crystals on the surface.

〔Effect of the invention〕

As described above, according to the present invention, elemental elements are used instead of hydrides as Group V raw materials, which improves operational safety. Since it is introduced in a stable state, it reacts efficiently with group M raw materials, and there is no need to supply excessive raw materials.

[Brief explanation of drawings]

FIG. 1 is an explanatory cross-sectional view showing an organometallic vapor phase crystal growth apparatus according to an embodiment of the present invention. FIG. 2 is an explanatory cross-sectional view showing a conventional metal organic vapor phase crystal growth apparatus. In the figure, (1) is a hydrogen cylinder, (2) is an organometallic cylinder, (3) is a reaction tube, (4) is a wafer, (5) is a susceptor, (6) is an exhaust gas outlet, and (7) is a heater A. , (8)
(9) is a heater B, (10) is a group V element, and (11) is a carrier cassette of group V element vapor. In addition, in the figures, the same reference numerals indicate the same or equivalent parts. Figure 2

Claims (1)

[Claims] An organometallic vapor phase crystal growth apparatus characterized in that a vapor of a group V element can be introduced into a reaction tube for vapor phase crystal growth.