JPS5927759B2 - Vapor phase epitaxial equipment - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION In the vapor phase growth of ■-V group compound semiconductor, the present invention provides
This relates to a vapor phase epitaxial growth device that uses an organometallic gas as a group material and a hydride of a group V as a raw material, and in particular, an apparatus that promotes thermal decomposition of group hydrides and increases reaction efficiency of group hydrides. It is related to.

The configuration of a conventional vapor phase epitaxial growth apparatus is shown in FIG.

According to this device, a heating RF coil 10, a substrate support, and a pedestal 1 heated by the RF coil 10 are provided.
Introducing pipes 12 and 13 for introducing raw material compounds etc. are provided in the reaction tube 1 equipped with 1, and a cylinder 3 for raw material compound (V group hydride gas) is introduced into this introducing pipe 12 using a valve 30 to control the flow rate. The cylinder 4 (group Ⅰ organometallic compound) is connected to the inlet pipe 13 via a valve 40. The carrier gas cylinder 5 that conveys the raw material gas is a carrier gas purifier 50
, is connected to the cylinder 4 via the mass controller 41, while the carrier gas purifier 50 and the mass controller 3
1 to the introduction pipe 12. When using such an apparatus to grow InP, which is a type of ■-V group compound semiconductor, on the InP substrate 2, the cylinder 3 containing PH3, triethyl indium (C2H5)
The valves 30 and 40 of the cylinder 4 containing trialkylindium compounds such as No. Introduce.

However, PH3 is difficult to thermally decompose, and PH3 easily forms intermediate reactants with In(C2H5)3.
Conventionally, it has been necessary to separately provide the decomposition furnace 6 with a pH of 3 outside the reaction tube 1 in order to improve the growth efficiency of InP.
The present invention aims to improve the operability and save labor of the epitaxial growth apparatus by eliminating such drawbacks, and more specifically, by not providing a raw material compound decomposition furnace outside the reaction tube and providing such a function inside the reaction tube. The purpose is to achieve this goal.

Therefore, the vapor phase epitaxial apparatus according to the present invention comprises:
In a gas phase epitaxial apparatus comprising a reaction tube, a group V introduction tube and a group (III) organometallic compound introduction tube connected to the reaction tube, and a heating means provided in the reaction tube, the group V compound introduction tube The heating means is characterized in that it passes through a sufficient distance in order to thermally decompose the vicinity of the heating means.

2 and 3 are schematic diagrams of an embodiment of the epitaxial growth apparatus according to the present invention, with FIG. 2 showing a raw material gas supply system and FIG. 3 showing a reaction tube. In the figure, 1 is a reaction tube, 2 is a substrate, 3 is a cylinder for group raw materials, 4 is a cylinder for group organometallic compounds, 5 is a carrier gas cylinder, 10 is an RF coil, 11 is a pedestal, 12 is a group raw material introduction pipe, and 13 is a A group raw material introduction pipe, 30 and 40 are valves, 31 and 41 are mass controllers, and 50 is a carrier gas purification device.

As is clear from FIG. 2, the reaction tube 1 equipped with the RF coil 10 is connected to the group raw material introduction tube 13 which is connected to the group organometallic compound cylinder 4 via the valve 40, the mass controller 31, and the valve 30. A group raw material introduction pipe 12 connected to the group raw material cylinder 3 is connected thereto.

On the other hand, a carrier gas cylinder 5 for storing carrier gas for transporting these raw materials is connected to the cylinder 4 via a carrier gas purifier 50 and a mass controller 41. It is connected to the introduction pipe 12 via. The reaction tube 1 has this reaction tube 1 on the outer periphery as shown in FIG.
The reaction tube 1 is equipped with an RF coil 10 that heats the pedestal 11, and the above-mentioned pedestal 11 (internal heating means) that supports and heats the substrate 2 inside the RF coil 10, and the outer periphery of the pedestal 11. An introduction pipe 12 for a group raw material having a threaded portion 120 passing therethrough in a threaded manner and an introduction pipe 13 for introducing a group V organometallic compound gas are provided.

The introduction ports 12a and 13a of these introduction pipes 12 and 13 are integrated, respectively, to form a raw material introduction port 14. The operation of the present invention will be explained using the case where InP is grown on the substrate 2 as an example.

First, the valves 30 and 40 are opened, and trimethylindium (In(C2H5) diluted with hydrogen is introduced into the inlet pipe 13.
3), phosphine (PH3) is introduced from the introduction tube 12 into the reaction tube 1 heated by the RF coil 10.

The PH3 introduced from the introduction pipe 12 is heated by the carbon pedestal 11 heated by the action of the RF coil 10 as it passes through the threaded part (serpentine pipe) 120, and is thermally decomposed into a gas containing a sufficient amount of P4. Become. This gas flows into the inlet 12a of the inlet pipe 12, while the raw material gas in the inlet pipe 13 flows through the inlet 13a, mixes at the raw material inlet 14, reaches the heated substrate 2, and grows InP. It will be done.

With this device, it has become possible to grow InP efficiently without installing a new PH3 decomposition furnace as in the past.

This apparatus can also be applied to the growth of - group binary compounds of GaP, GaAs (AsH3 is used as the group V raw material gas), InAs, ternary compounds of NGaP, nGaAs, and quaternary compounds of InGaAsP.

As explained above, the present invention has a great advantage in that it is possible to efficiently grow a group-V compound semiconductor without providing a new group-V hydride decomposition furnace before the reaction tube.

[Brief explanation of the drawing]

Figure 1 is a schematic diagram of a conventional vapor phase epitaxial growth apparatus.
FIGS. 2 and 3 are schematic diagrams of an embodiment of the vapor phase epitaxial growth apparatus of the present invention. 1...Reaction tube, 2...Substrate, 3...
... gas cylinder for group raw materials, 4 ... fence group organometallic compound cylinder, 5 ... carrier gas cylinder, 6
...Group hydride pyrolysis furnace, 10...R
F coil, 11...Pedestal, 12...
...Group hydride gas introduction pipe, 13...Group organometallic compound gas introduction pipe, 30, 40...Valve,
31, 41... Mass flow controller, 50
...Carrier gas purification device.

Claims (1)

[Claims] 1 Group V raw material introduction pipe for supplying Group V raw materials, and III
In a gas phase epitaxial apparatus having a reaction tube equipped with a group III organometallic compound introduction tube for supplying a group III organometallic compound and a heating means inside, the group V raw material introduction tube is provided inside the reaction tube. 1. A vapor phase epitaxial apparatus, characterized in that the gas phase epitaxial device is arranged so as to pass near the internal heating means, and further, the inlet thereof is arranged near the inlet of the group III organometallic compound inlet pipe.