JPS5948789B2 - Vapor phase epitaxial growth equipment - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION The present invention provides the method for vapor phase growth of ■-V group compound semiconductors.
The present invention relates to a vapor phase epitaxial growth apparatus using an organometallic gas as a group raw material and a group V hydride as a group raw material,
In particular, it relates to an apparatus that promotes the thermal decomposition of group V hydrides and increases the reaction efficiency of group V hydrides.

The configuration of a conventional vapor phase epitaxial growth apparatus is shown in FIG.

According to this device, the heating RF coil 10, the substrate 2 heated by the RF coil 10, and the substrate 2
Introducing pipes 12 and 13 for introducing raw material compounds etc. are provided into the reaction tube 1 equipped with a pedestal 11 for supporting the reactor, and a cylinder 3 for the raw material compound (V group hydride gas) is installed in this introducing pipe 12. It is connected to the valve 30 via a mass flow controller 31 that controls the flow rate and a decomposition furnace 6, and a cylinder 4 for a group II organometallic compound is connected to the inlet pipe 13 via the valve 4.
Connect via 0. The carrier gas cylinder 5 that conveys the raw material gas is connected to a carrier gas purifier 50 and a mass flow controller. 41 to the cylinder 4, and the carrier gas purifier 50, the mass flow controller 31, and the decomposition furnace 6 to the inlet pipe 12. For example, when growing InP, which is a type of -V group compound semiconductor, on an InP substrate 2 using such a device, a cylinder 3 containing phosphine PH3, a trialkylindium such as triethylindium In(C2H5)3, etc. Respective valves 30, 40 of cylinder 4 containing the compound
is opened, and the raw material gas is introduced through the introduction tubes 12 and 13 into the reaction tube 1 containing the pedestal 11 for holding the substrate heated by the coil 10. However, phosphin PH3 is difficult to thermally decompose, and phosphin PH3
Since phosphine PH3 tends to form intermediate reactants with In(C2H5)3, it has conventionally been necessary to separately provide the decomposition furnace 6 for phosphine PH3 outside the reaction tube 1 in order to improve the growth effect of InP. In order to eliminate such drawbacks, the present invention does not provide a raw material compound decomposition furnace outside the reaction tube, but provides such a function inside the reaction tube, thereby improving the operability and saving labor of the epitaxial growth apparatus. An object of the present invention is to provide a vapor phase epitaxial growth apparatus that achieves the following.

A gas phase epitaxial apparatus according to the present invention includes a reaction tube, a group introduction tube and a group organometallic compound introduction tube connected to the reaction tube, and a heating means provided in the reaction tube. The method is characterized in that the group compound inlet tube passes through the inside of the heating means in order to sufficiently thermally decompose the group compound.

The present invention will be explained in detail below.

2 and 3 are schematic diagrams of an embodiment of the epitaxial growth apparatus according to the present invention, with FIG. 2 showing a raw material gas supply system and FIG. 3 showing a reaction tube.

In the figure, 1 is a reaction tube, 2 is a substrate, 3 is a cylinder for group V raw materials, and 4
1 is a cylinder for group organometallic compounds, 5 is a carrier gas cylinder, 10 is an RF coil, 11 is a pedestal, 12 is a group raw material introduction pipe, 13 is a group raw material introduction pipe, 30 and 40 are valves, 3
1 and 41 are mass flow controllers, and 50 is a carrier gas purifier. As is clear from this Figure 2, R
The reaction tube 1 equipped with the F coil 10 has a group material introduction tube 1 connected to the group organometallic compound cylinder 4 via a valve 40.
3 and mass flow controller 31 and valve 30
A group raw material inlet pipe 12 is connected to the group raw material cylinder 3 via the group raw material cylinder 3.

On the other hand, a carrier gas cylinder 5 for storing carrier gas for transporting these raw materials is connected to the cylinder 4 via a carrier gas purifier 50 and a mass flow controller 41. It is connected to the introduction pipe 12 via. As shown in FIG. 3, the reaction tube 1 is equipped with an RF coil 10 on its outer periphery for heating a pedestal 11 provided inside the reaction tube 1, and also supports a plurality of substrates 2 inside the RF coil 10 for heating. Pedestal 11 (
(internal heating means), an introduction pipe 12 for the group raw material, and an introduction pipe 13 for introducing the group organometallic compound gas. The group V raw material introduction pipe 12 passes through the pedestal 11, and its introduction port 12a is located inside the pedestal 11. As shown in FIG. 4, the pedestal 11 is made of a cylindrical graphite rod, and its upper part
It is cut into multiple sides to hold it, and its center is v
It is hollowed out halfway so that the introduction pipe 12 for group raw materials can be inserted therein.

The operation of the present invention will be explained by taking as an example the case where NPs are grown on the substrate 2.

First, the valves 30 and 40 are opened, and trimethylindium (In(C,H5) diluted with hydrogen is introduced from the inlet pipe 13.
)3), and from the introduction tube 12, phosphine (PH
3) is introduced into the reaction tube 1 heated by the RF coil 10. Phosphine PH3 introduced from the introduction pipe 12 is heated as it passes through the heated carbon pedestal 11 by the action of the RF coil 10, and undergoes thermal decomposition to become a gas containing a sufficient amount of P4. This gas passes through the inlet 12a of the group V raw material inlet pipe 12, rises inside the pedestal 11 outside the V group raw material inlet pipe 12 as shown by the black arrow, and enters the group organometallic compound gas inlet 13a. The mixed gas is mixed with the group organometallic compound gas nearby, and this mixed gas reaches the heated substrate 2 as shown by the white and black arrows, and the InP
growth takes place. With this apparatus, it has become possible to efficiently grow InP without providing a new decomposition furnace for phosphine PH3 as in the past.

Note that this device uses GaPlGaAs (AsH3 is used as the group V raw material gas). InAsO) 111-V group binary compounds and InGaPsInGaAs ternary compounds,
It can also be applied to the growth of quaternary compounds such as InGaAsP.
As explained above, the present invention has a great advantage in that it is possible to efficiently grow a group-V compound semiconductor without newly providing a group-V hydride decomposition furnace before the reaction tube.

[Brief explanation of the drawing]

Figure 1 is a schematic purchasing diagram of a conventional vapor phase epitaxial growth apparatus, Figure 2 is a schematic purchasing diagram of a vapor phase epitaxial growth apparatus of the present invention, and Figure 3 is a purchasing diagram of a reaction tube used in the present invention. FIG. 4 is a longitudinal sectional view including a partial perspective view showing an example, and FIG. 4 is a longitudinal sectional view showing an example of the structure of a pedestal used in the present invention. 1...Reaction tube, 2...Substrate, 3...
Gas cylinders for V group raw materials, 4 cylinders for group organometallic compounds, 5 Yaria gas cylinders,
6... Group V hydrogen compound thermal decomposition furnace, 10...
...RF coil, 11...Pedestal, 12.
...Group hydride gas introduction pipe (V group raw material introduction pipe),
13...Group organometallic compound gas introduction pipe, 14.
...Substrate holding groove, 30, 40...Valve, 31, 41...Mass flow controller, 50...Carrier gas purification device.

Claims (1)

[Claims] 1. A group V raw material introduction pipe for supplying group V raw material gas;
In a gas phase epitaxial apparatus having a reaction tube equipped with a group III organometallic compound introduction pipe for supplying a group III organometallic compound gas and an internal heating means for supporting and heating a substrate therein, The introduction pipe is arranged to pass through the internal heating means provided inside the reaction tube, and the group V raw material gas discharged from the inlet of the group V raw material introduction pipe inside the internal heating means is It passes through the internal heating means again and mixes with the group III organometallic compound gas near the inlet of the group III organometallic compound gas introduction pipe, and the mixed gas is guided onto the substrate to cause crystal growth. 1. A vapor phase epitaxial growth apparatus characterized in that it is configured to perform vapor phase epitaxial growth. 2. The vapor phase epitaxial growth apparatus according to claim 1, wherein the upper part of the internal heating means is formed to be able to hold and heat a plurality of substrates.