JPH03273087A - Organic electroluminescent element - Google Patents
Organic electroluminescent elementInfo
- Publication number
- JPH03273087A JPH03273087A JP2075225A JP7522590A JPH03273087A JP H03273087 A JPH03273087 A JP H03273087A JP 2075225 A JP2075225 A JP 2075225A JP 7522590 A JP7522590 A JP 7522590A JP H03273087 A JPH03273087 A JP H03273087A
- Authority
- JP
- Japan
- Prior art keywords
- poly
- conductive polymer
- charge transport
- organic electroluminescent
- phenylene
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 229920001940 conductive polymer Polymers 0.000 claims abstract description 20
- 125000004432 carbon atom Chemical group C* 0.000 claims abstract description 16
- 229920000553 poly(phenylenevinylene) Polymers 0.000 claims abstract description 12
- 239000004215 Carbon black (E152) Substances 0.000 claims abstract description 6
- 125000006615 aromatic heterocyclic group Chemical group 0.000 claims abstract description 6
- 125000002029 aromatic hydrocarbon group Chemical group 0.000 claims abstract description 6
- 229930195733 hydrocarbon Natural products 0.000 claims abstract description 6
- 229920000767 polyaniline Polymers 0.000 claims abstract description 5
- 239000000463 material Substances 0.000 abstract description 19
- 238000004528 spin coating Methods 0.000 abstract description 10
- 125000003118 aryl group Chemical group 0.000 abstract description 3
- 125000005647 linker group Chemical group 0.000 abstract description 2
- 238000000034 method Methods 0.000 description 18
- 239000010409 thin film Substances 0.000 description 13
- -1 5,10-anthracenediyl Chemical group 0.000 description 12
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 description 12
- 239000010408 film Substances 0.000 description 12
- 238000010438 heat treatment Methods 0.000 description 10
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 9
- 238000004519 manufacturing process Methods 0.000 description 9
- 229920000642 polymer Polymers 0.000 description 9
- RWSOTUBLDIXVET-UHFFFAOYSA-N Dihydrogen sulfide Chemical class S RWSOTUBLDIXVET-UHFFFAOYSA-N 0.000 description 6
- 239000000243 solution Substances 0.000 description 6
- 125000001140 1,4-phenylene group Chemical group [H]C1=C([H])C([*:2])=C([H])C([H])=C1[*:1] 0.000 description 5
- 238000006116 polymerization reaction Methods 0.000 description 5
- PAYRUJLWNCNPSJ-UHFFFAOYSA-N Aniline Chemical compound NC1=CC=CC=C1 PAYRUJLWNCNPSJ-UHFFFAOYSA-N 0.000 description 4
- 125000003545 alkoxy group Chemical group 0.000 description 4
- 239000007864 aqueous solution Substances 0.000 description 4
- 238000003379 elimination reaction Methods 0.000 description 4
- 229910052736 halogen Inorganic materials 0.000 description 4
- 150000002500 ions Chemical class 0.000 description 4
- 125000002080 perylenyl group Chemical group C1(=CC=C2C=CC=C3C4=CC=CC5=CC=CC(C1=C23)=C45)* 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 3
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 3
- 239000003513 alkali Substances 0.000 description 3
- 239000012298 atmosphere Substances 0.000 description 3
- 238000005266 casting Methods 0.000 description 3
- 238000000295 emission spectrum Methods 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 150000002430 hydrocarbons Chemical group 0.000 description 3
- 238000004020 luminiscence type Methods 0.000 description 3
- 230000001590 oxidative effect Effects 0.000 description 3
- CSHWQDPOILHKBI-UHFFFAOYSA-N peryrene Natural products C1=CC(C2=CC=CC=3C2=C2C=CC=3)=C3C2=CC=CC3=C1 CSHWQDPOILHKBI-UHFFFAOYSA-N 0.000 description 3
- 239000002904 solvent Substances 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 238000001771 vacuum deposition Methods 0.000 description 3
- HEDRZPFGACZZDS-UHFFFAOYSA-N Chloroform Chemical class ClC(Cl)Cl HEDRZPFGACZZDS-UHFFFAOYSA-N 0.000 description 2
- OAKJQQAXSVQMHS-UHFFFAOYSA-N Hydrazine Chemical compound NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 description 2
- 238000000862 absorption spectrum Methods 0.000 description 2
- ROOXNKNUYICQNP-UHFFFAOYSA-N ammonium persulfate Chemical compound [NH4+].[NH4+].[O-]S(=O)(=O)OOS([O-])(=O)=O ROOXNKNUYICQNP-UHFFFAOYSA-N 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 238000000354 decomposition reaction Methods 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- DETPPCCUWRJLKU-UHFFFAOYSA-N diethylsulfanium bromide Chemical compound [Br-].CC[SH+]CC DETPPCCUWRJLKU-UHFFFAOYSA-N 0.000 description 2
- 125000005678 ethenylene group Chemical group [H]C([*:1])=C([H])[*:2] 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000003960 organic solvent Substances 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- QHJXOJHVTGXCRC-UHFFFAOYSA-N 1,1-diphenylbuta-1,3-dien-2-ylbenzene Chemical compound C=1C=CC=CC=1C(C=C)=C(C=1C=CC=CC=1)C1=CC=CC=C1 QHJXOJHVTGXCRC-UHFFFAOYSA-N 0.000 description 1
- CMSGUKVDXXTJDQ-UHFFFAOYSA-N 4-(2-naphthalen-1-ylethylamino)-4-oxobutanoic acid Chemical compound C1=CC=C2C(CCNC(=O)CCC(=O)O)=CC=CC2=C1 CMSGUKVDXXTJDQ-UHFFFAOYSA-N 0.000 description 1
- 125000002373 5 membered heterocyclic group Chemical group 0.000 description 1
- 229910001316 Ag alloy Inorganic materials 0.000 description 1
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 1
- 101100264195 Caenorhabditis elegans app-1 gene Proteins 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 description 1
- 239000005977 Ethylene Substances 0.000 description 1
- 229910019015 Mg-Ag Inorganic materials 0.000 description 1
- 239000004793 Polystyrene Substances 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000012670 alkaline solution Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- QGZKDVFQNNGYKY-UHFFFAOYSA-N ammonia Natural products N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 1
- 229910001870 ammonium persulfate Inorganic materials 0.000 description 1
- 150000001448 anilines Chemical class 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 125000000484 butyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 239000010406 cathode material Substances 0.000 description 1
- 238000004587 chromatography analysis Methods 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 229920001688 coating polymer Polymers 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 229920000547 conjugated polymer Polymers 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000005695 dehalogenation reaction Methods 0.000 description 1
- 238000003795 desorption Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 125000003438 dodecyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- 239000000975 dye Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000008030 elimination Effects 0.000 description 1
- 238000010828 elution Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 1
- 238000002189 fluorescence spectrum Methods 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 125000003187 heptyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 125000004051 hexyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- 230000005525 hole transport Effects 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 1
- 239000000178 monomer Substances 0.000 description 1
- DCZNSJVFOQPSRV-UHFFFAOYSA-N n,n-diphenyl-4-[4-(n-phenylanilino)phenyl]aniline Chemical class C1=CC=CC=C1N(C=1C=CC(=CC=1)C=1C=CC(=CC=1)N(C=1C=CC=CC=1)C=1C=CC=CC=1)C1=CC=CC=C1 DCZNSJVFOQPSRV-UHFFFAOYSA-N 0.000 description 1
- 125000002347 octyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 239000007800 oxidant agent Substances 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 125000001147 pentyl group Chemical group C(CCCC)* 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229920003227 poly(N-vinyl carbazole) Polymers 0.000 description 1
- 238000012643 polycondensation polymerization Methods 0.000 description 1
- 125000003367 polycyclic group Chemical group 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229920006254 polymer film Polymers 0.000 description 1
- 229920002223 polystyrene Polymers 0.000 description 1
- CUQOHAYJWVTKDE-UHFFFAOYSA-N potassium;butan-1-olate Chemical compound [K+].CCCC[O-] CUQOHAYJWVTKDE-UHFFFAOYSA-N 0.000 description 1
- 125000001436 propyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 125000004079 stearyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 230000002194 synthesizing effect Effects 0.000 description 1
- 229920001059 synthetic polymer Polymers 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- TVIVIEFSHFOWTE-UHFFFAOYSA-K tri(quinolin-8-yloxy)alumane Chemical compound [Al+3].C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1 TVIVIEFSHFOWTE-UHFFFAOYSA-K 0.000 description 1
- ODHXBMXNKOYIBV-UHFFFAOYSA-N triphenylamine Chemical compound C1=CC=CC=C1N(C=1C=CC=CC=1)C1=CC=CC=C1 ODHXBMXNKOYIBV-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Polymers With Sulfur, Phosphorus Or Metals In The Main Chain (AREA)
- Polyoxymethylene Polymers And Polymers With Carbon-To-Carbon Bonds (AREA)
- Macromolecular Compounds Obtained By Forming Nitrogen-Containing Linkages In General (AREA)
- Electroluminescent Light Sources (AREA)
- Luminescent Compositions (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野]
本発明は、有機エレクトロルミネッセンス素子に関する
ものであり、詳しくは、作製方法か簡便で安価な各種表
示装置の発光体として用いられる有機エレクトロルミネ
ッセンス素子と、その作製方法に関するものである。[Detailed Description of the Invention] [Industrial Application Field] The present invention relates to an organic electroluminescent device, and more particularly, to an organic electroluminescent device that is used as a light emitting body of various types of display devices that are simple and inexpensive. and its manufacturing method.
有機蛍光材料を用いたエレクトロルミネッセンス素子(
以下EL素子という)は、無機EL素子に比べ、駆動電
圧が低(て輝度が高く、どのような色の発光も容易に得
ることができるという特徴があり、多くの試みが報告さ
れていた。しかしながら、電極から有機物発光層へキャ
リアを注入しにくいために、低輝度であった。これを解
決するためにTangらは、有機物発光層に感光体とし
て用いられていた有機物正孔輸送材料を積層した2層構
造を作製し、高効率、高輝度のEL素子を実現させた(
特開昭59−194393号公報)。さらに、それ以後
、有機物電子輸送材料と有機物正孔輸送材料で有機物発
光層を挾み込んだ3層構造の素子〔ジャパン・ジャーナ
ル・オブ・アプライド・フィジックス(Jpn、J、A
ppl、Phys、)27. L269(l988))
や、発光層に種々の色素をドーピングすることにより種
々の色のEL発光素子が作製されている〔ジャーナル・
オブ・アプライド・フィジックス(J、 App 1.
Phys、 )第65巻、3610頁(l989年)
〕。Electroluminescent device using organic fluorescent material (
Compared to inorganic EL elements, EL elements (hereinafter referred to as EL elements) have the characteristics of low driving voltage, high brightness, and the ability to easily emit light of any color, and many attempts have been reported. However, the luminance was low because it was difficult to inject carriers from the electrode to the organic light emitting layer. To solve this problem, Tang et al. We created a two-layer structure with high efficiency and high brightness (
JP-A-59-194393). Furthermore, since then, a device with a three-layer structure in which an organic light emitting layer is sandwiched between an organic electron transport material and an organic hole transport material [Japan Journal of Applied Physics (Jpn, J, A
ppl, Phys, )27. L269 (l988))
In addition, EL light-emitting elements of various colors have been fabricated by doping the light-emitting layer with various dyes [Journal.
of Applied Physics (J, App 1.
Phys, ) Volume 65, Page 3610 (1989)
].
これまで報告されてきた有機物EL素子は発光層や電荷
輸送層を真空中で蒸着することにより、作製されていた
。しかしながら、真空蒸着法では大量生産に向かず、ま
た大面積の素子を作製するには限度がある。また、EL
素子をLCDなどの非発光性のバックライト照明として
用いる場合、大面積化の要求は大きく大量生産も必要で
ある。Organic EL devices that have been reported so far have been fabricated by depositing a light-emitting layer and a charge transport layer in a vacuum. However, the vacuum evaporation method is not suitable for mass production, and there are limits to the production of large-area devices. Also, EL
When the device is used as a non-luminous backlight for an LCD or the like, there is a strong demand for a large area, and mass production is also required.
それに関して、ポリビニルカルバゾールを代表とした高
分子半導体にペリレンやトリフェニルブタジェンなどの
蛍光物質を分散させたものをスピンコーティングしてE
L素子の発光層にする試みがある( Polymer、
、 24.748(l983))が、膜の強度や均一
な発光面を得るのに問題がある。Regarding this, we have developed a method for spin-coating polymer semiconductors such as polyvinylcarbazole with fluorescent substances such as perylene and triphenylbutadiene dispersed therein.
There are attempts to use it as a light-emitting layer for L elements (Polymer,
, 24.748 (1983)), there are problems in obtaining film strength and a uniform light emitting surface.
[課題を解決するための手段]
本発明者らは、導電性高分子の応用について鋭意検討し
た結果、共役鎖が十分に長いものは、キャリアの移動度
が高く、スピンコーティング法やキャスティング法等に
よって簡便に薄膜化が可能な電荷輸送材料として用いる
ことができることを見い出し、本発明に到達した。[Means for Solving the Problems] As a result of intensive studies on the application of conductive polymers, the present inventors have found that those with sufficiently long conjugated chains have high carrier mobility, and have been found to be suitable for spin coating, casting, etc. The present invention was achieved based on the discovery that it can be used as a charge transport material that can be easily made into a thin film.
すなわち、本発明は、少なくとも一方が透明または半透
明である一対の電極間に発光層および電荷輸送層を有す
る有機エレクトロルミネッセンス素子において、電荷輸
送層として一般式(I)−Ar−B−(I)
Ar:炭素数6以上の芳香族炭化水素基、または炭素数
4以上のヘテロ環芳香族炭化水素基、
B : −CI(=CH−基あるいは−NH−基で示さ
れる繰り返し単位を有する導電性高分子を用いることを
特徴とする有機エレクトロルミネッセンス素子を提供す
ることにある。That is, the present invention provides an organic electroluminescent device having a light-emitting layer and a charge transport layer between a pair of electrodes, at least one of which is transparent or translucent, in which the charge transport layer is composed of the general formula (I)-Ar-B-(I ) Ar: aromatic hydrocarbon group having 6 or more carbon atoms, or heterocyclic aromatic hydrocarbon group having 4 or more carbon atoms, B: -CI (conductive unit having a repeating unit represented by =CH- group or -NH- group) An object of the present invention is to provide an organic electroluminescent device characterized by using a synthetic polymer.
以下に本発明によるEL素子について詳細に説明する。The EL element according to the present invention will be explained in detail below.
本発明に用いる一般式(I)に示す導電性高分子は、芳
香環と結合基が交互に結合した高分子である。但し、電
荷輸送材として用いる場合には、比較的共役鎖長の長い
ものが好ましい。The conductive polymer represented by the general formula (I) used in the present invention is a polymer in which aromatic rings and bonding groups are alternately bonded. However, when used as a charge transporting material, one with a relatively long conjugated chain length is preferred.
導電性高分子の合成法としては特に限定されないが、例
えば次に述べるようないくつかの方法を用いることがで
きる。Although the method for synthesizing the conductive polymer is not particularly limited, for example, several methods such as those described below can be used.
特開平1−254734号公報に記載されているスルホ
ニウム塩分解法では一般式(II)
(Arは炭素数6以上の芳香族炭化水素基、または炭素
数4以上のヘテロ環芳香族炭化水素基、R1,R2は炭
素数1〜8の炭化水素基、X−は対イオンを表す。)
で示されるモノマーを水溶液中、0℃付近でアルカリと
反応させることにより得られる、側鎖にスルホニウム塩
を有する高分子中間体、あるいはそれをアルコール溶媒
と反応させて得られる、アルコキシ基を側鎖に有する高
分子中間体を熱処理することにより一般式(I)に示さ
れる導電性高分子を得ることができる。In the sulfonium salt decomposition method described in JP-A-1-254734, the general formula (II) (Ar is an aromatic hydrocarbon group having 6 or more carbon atoms, or a heterocyclic aromatic hydrocarbon group having 4 or more carbon atoms, R1 , R2 is a hydrocarbon group having 1 to 8 carbon atoms, and X- represents a counter ion), which has a sulfonium salt in its side chain and is obtained by reacting a monomer represented by the following with an alkali in an aqueous solution at around 0°C. A conductive polymer represented by general formula (I) can be obtained by heat-treating a polymer intermediate or a polymer intermediate having an alkoxy group in its side chain obtained by reacting it with an alcohol solvent. .
特開昭59−199746号公報に記載の脱ハロゲン化
法では一般式(III)
X+−CH2−Am−C)I2−Xl (I[[)
(Arは上記と同様なものを表し、Xlはハロゲンを表
す。ンで示されるジハロゲン化合物を溶液中でt−ブト
キシカリウム等のアルカリにより縮合することにより、
導電性高分子を得ることができる。In the dehalogenation method described in JP-A-59-199746, general formula (III) X+-CH2-Am-C)I2-Xl (I[[)
(Ar represents the same thing as above, Xl represents halogen. By condensing the dihalogen compound represented by
A conductive polymer can be obtained.
また、本発明に用いる一般式(I)の導電性高分子の内
でBがビニレン基の場合は、炭素数6以上の芳香族炭化
水素、または炭素数4以上のヘテロ環芳香族炭化水素で
あり、具体的にはA「が無置換のものはp−フェニレン
、2,5−ジアルキルp−フェニレン、2,5−ジアル
コキシ−p−フェニレン、2,5−チェニレン、2,6
−ナフタレンジイル、5,10−アントラセンジイルが
例示され、好ましくはp−フェニレンである。また、核
置換芳香族炭化水素基としては炭素数1〜22の炭化水
素基または炭素数1〜22のアルコキシ基を1ないし2
個核置換したものが好適に用いられる。置換基である炭
素数1〜22の炭化水素基置換基としてはメチル、エチ
ル、プロピル、ブチル、ペンチル、ヘキシル、ヘプチル
、オクチル、ラウリル、オクタデシル基などが例示され
る。また、炭素数1〜22のアルコキシ基としてはメト
キシ、エトキシ、プロピルオキシ、ペンチルオキシ、ヘ
キシルオキシ、ヘプチルオキシ、オクチルオキシ、ラウ
リルオキシ、オクタデシルオキシ基等が例示される。核
置換芳香族基について、より具体的にはモノメチル−p
−フェニレン、モノメトキシ−p−フェニレン、2,5
−ジメチル−p−フェニレン、2,5−ジメトキシ−p
−フェニレン、モノエチル−p−フェニレン、2,5−
ジェトキシ−p−フェニレン、2,5−ジニチルーp−
フェニレン、モノブチル−p−フェニレン、モノブトキ
シ−p−フェニレン、モノブチル−p−フェニレン、2
,5−ジブトキシ−p−フェニレン、2,5−ジヘプチ
ルーp−フェニレン、2,5−ジヘプトキシーp−フェ
ニレン、2,5−ジオクチル−p−フェニレン、2,5
−ジオクトキシーp−フェニレン、2,5−ジラウリル
−p−フェニレン、2,5−ジラウリルオキシ−p−フ
ェニレン、2,5−ジステアリル−p−フェニレン、2
.5−ジステアリルオキシ−p−フェニレン等が例示さ
れる。In addition, in the conductive polymer of general formula (I) used in the present invention, when B is a vinylene group, it is an aromatic hydrocarbon having 6 or more carbon atoms, or a heterocyclic aromatic hydrocarbon having 4 or more carbon atoms. Specifically, unsubstituted A is p-phenylene, 2,5-dialkyl p-phenylene, 2,5-dialkoxy-p-phenylene, 2,5-chenylene, 2,6
Examples include -naphthalenediyl and 5,10-anthracenediyl, with p-phenylene being preferred. In addition, as the nuclear-substituted aromatic hydrocarbon group, 1 to 2 hydrocarbon groups having 1 to 22 carbon atoms or alkoxy groups having 1 to 22 carbon atoms can be used.
Those in which individual nuclei have been replaced are preferably used. Examples of the hydrocarbon substituents having 1 to 22 carbon atoms include methyl, ethyl, propyl, butyl, pentyl, hexyl, heptyl, octyl, lauryl, and octadecyl groups. Examples of the alkoxy group having 1 to 22 carbon atoms include methoxy, ethoxy, propyloxy, pentyloxy, hexyloxy, heptyloxy, octyloxy, lauryloxy, and octadecyloxy groups. Regarding nuclear substituted aromatic groups, more specifically monomethyl-p
-phenylene, monomethoxy-p-phenylene, 2,5
-dimethyl-p-phenylene, 2,5-dimethoxy-p
-phenylene, monoethyl-p-phenylene, 2,5-
Jetoxy-p-phenylene, 2,5-dinityl-p-
Phenylene, monobutyl-p-phenylene, monobutoxy-p-phenylene, monobutyl-p-phenylene, 2
, 5-dibutoxy-p-phenylene, 2,5-diheptyl-p-phenylene, 2,5-diheptoxy-p-phenylene, 2,5-dioctyl-p-phenylene, 2,5
-Dioctoxy-p-phenylene, 2,5-dilauryl-p-phenylene, 2,5-dilauryloxy-p-phenylene, 2,5-distearyl-p-phenylene, 2
.. Examples include 5-distearyloxy-p-phenylene.
また、炭素数4以上のヘテロ環芳香族炭化水素基として
は複素5員環が好ましく、2.5−チェニレン、2,5
−フランジイル、2,5−ピロールジイルあるいはそれ
らの3位かつ/あるいは4位への置換体が例示される。Furthermore, the heterocyclic aromatic hydrocarbon group having 4 or more carbon atoms is preferably a 5-membered heterocyclic ring, such as 2.5-thennylene, 2,5
Examples thereof include -furandiyl, 2,5-pyrrolediyl, and substituted products thereof at the 3- and/or 4-positions.
より好ましくは、2,5−チェニレン、3−C,〜22
アルキルー2,5−チェニレンである。More preferably 2,5-thennylene, 3-C, ~22
Alkyl-2,5-chenylene.
最も好ましくはArがp−フェニレン、2,5−ジC1
〜2アルキルーp−フェニレン、2,5−ジC1〜2ア
ルコキシーp−フェニレン、2,5−チェニレンである
。Most preferably Ar is p-phenylene, 2,5-diC1
~2alkyl-p-phenylene, 2,5-diC1-2alkoxy p-phenylene, and 2,5-chenylene.
本発明に使用の導電性高分子のうちで、Bか−NH−の
場合は、アニリン又はアニリン誘導体を公知の方法で電
解酸化重合、あるいは化学酸化重合することにより得ら
れるポリアニリンおよびその誘導体が好ましい。ポリア
ニリンおよびその誘導体を溶媒に溶解させるには、重合
後、アルカリ溶液で処理することが好ましい。アルカリ
としては水酸化ナトリウム、水酸化カリウム、アンモニ
ア水、ヒドラジンなどが用いることができる。Among the conductive polymers used in the present invention, in the case of B or -NH-, polyaniline and its derivatives obtained by electrolytic oxidative polymerization or chemical oxidative polymerization of aniline or aniline derivatives by a known method are preferable. . In order to dissolve polyaniline and its derivatives in a solvent, it is preferable to treat with an alkaline solution after polymerization. As the alkali, sodium hydroxide, potassium hydroxide, aqueous ammonia, hydrazine, etc. can be used.
上記の高分子中間体または導電性高分子を薄膜化する方
法としてはスピンコード法、キャスト法などの方法で均
一な薄膜を得るには、その分子量は十分高いことが必要
である。重合度は5以上であり、より好ましくは、重合
度lO〜50000である。In order to obtain a uniform thin film using a method such as a spin cord method or a casting method to form a thin film from the above-mentioned polymer intermediate or conductive polymer, the molecular weight must be sufficiently high. The degree of polymerization is 5 or more, more preferably 10 to 50,000.
具体的にはゲルバーミニジョンクロマトグラフィーによ
る分子量測定において分子量2800の標準ポリスチレ
ンに相当する溶媒溶出位置以前に溶出する高分子量を有
するものが効果的である。Specifically, in molecular weight measurement by gel verminion chromatography, it is effective to have a high molecular weight that elutes before the solvent elution position corresponding to standard polystyrene having a molecular weight of 2800.
スルホニウム塩分解法で得られる高分子中間体を用いる
場合には共役系高分子に転換するために側鎖の脱離処理
を行う。脱離処理として、光エネルギー、熱を与える方
法が一般的であるが、加熱処理が好ましい。側鎖の熱脱
離処理によって共役鎖長を形成させる際、熱処理温度に
よって共役鎖長を規定できる。すなわち、ある一定の温
度以下であれば熱処理温度が高いほど、共役鎖長が長く
なる。したがって、熱処理温度としては電荷輸送材料に
用いる場合は高温加熱処理を行う。具体的には200°
C〜400℃で熱処理を行うのが好ましい。When using a polymer intermediate obtained by the sulfonium salt decomposition method, a side chain elimination process is performed to convert it into a conjugated polymer. As a desorption treatment, a method of applying light energy or heat is generally used, but a heat treatment is preferable. When forming a conjugated chain length by thermal elimination treatment of side chains, the conjugated chain length can be defined by the heat treatment temperature. That is, the higher the heat treatment temperature is below a certain temperature, the longer the conjugated chain length becomes. Therefore, the heat treatment temperature is high when used as a charge transport material. Specifically 200°
It is preferable to carry out the heat treatment at a temperature of C to 400C.
熱処理時間については、側鎖の脱離反応が起こる時間で
あれば特に制限はなく、一般的には10分〜20時間、
好ましくは30分〜8時間程度である。There is no particular restriction on the heat treatment time as long as the side chain elimination reaction occurs, and it is generally 10 minutes to 20 hours.
Preferably it is about 30 minutes to 8 hours.
熱処理する際の雰囲気については、高分子フィルムの変
質が起こらない雰囲気、特に酸素、空気による酸化反応
が起こらない雰囲気であれば特に限定されず、一般的に
はN7、Ar5He等の不活性ガス雰囲気であり、また
真空下あるいは不活性媒体であってもよい。The atmosphere during heat treatment is not particularly limited as long as it does not cause deterioration of the polymer film, especially an atmosphere that does not cause oxidation reactions due to oxygen or air, and is generally an inert gas atmosphere such as N7 or Ar5He. It may also be under vacuum or in an inert medium.
高分子中間体スルホニウム塩の対イオンX−については
、Cl−1Br−等のハロゲンイオン、さらにそのハロ
ゲンイオンを置換することによって、BF、−1p−ト
ルエンスルホン酸イオン等の化合物イオンとすることも
できる。対イオンの種類によって高分子中間体スルホニ
ウム塩の性質は大きく異なり、ハロゲンイオンを例にと
ればC1−よりもBr−が対イオンである方が熱脱離反
応が起きやすい。対イオンがBF4−の場合にはN、N
−ジメチルホルムアミド等の有機溶媒可溶となり、p−
トルエンスルホン酸イオンの場合には高分子スルホニウ
ム塩中間体側鎖をアルコキシ基化することが可能である
。The counter ion X- of the polymer intermediate sulfonium salt can be a halogen ion such as Cl-1Br-, and by further substituting the halogen ion, it can be a compound ion such as BF or -1p-toluenesulfonate ion. can. The properties of the polymeric intermediate sulfonium salt vary greatly depending on the type of counter ion; taking a halogen ion as an example, thermal elimination reactions are more likely to occur when Br- is the counter ion than C1-. When the counterion is BF4-, N, N
- Becomes soluble in organic solvents such as dimethylformamide, p-
In the case of toluenesulfonate ion, it is possible to convert the side chain of the polymeric sulfonium salt intermediate into an alkoxy group.
本発明のEL素子の構造を第1図に示す。EL素子の製
造過程で用いる透明な薄膜電極としては導電性の金属酸
化物膜、半透明の金属薄膜等が用いられる。この電極の
材料として具体的には、インジウム・スズ・オキサイド
(ITo)酸化スズ(NESA) 、Au、 Pt、
Ag、 Cu等が用いられ、膜厚としては50人〜1μ
岳程度、好ましくは100人〜500人程度であり、作
製方法としては、真空蒸着法、スパッタリング法、メツ
キ法などが用いられる。The structure of the EL element of the present invention is shown in FIG. As transparent thin film electrodes used in the manufacturing process of EL elements, conductive metal oxide films, translucent metal thin films, etc. are used. Specifically, the materials for this electrode include indium tin oxide (ITo), tin oxide (NESA), Au, Pt,
Ag, Cu, etc. are used, and the film thickness is 50 to 1μ.
The number of people required is approximately 100 to 500, and the manufacturing method includes a vacuum evaporation method, a sputtering method, a plating method, and the like.
導電性高分子の電荷輸送層を作製する際、−最大(I)
で示される導電性高分子あるいはその高分子中間体の溶
液を電極上にスピンコーティング法、キャスティング法
、ディッピング法、バーコード法、ロールコート法等を
用いて薄膜化する。When preparing a charge transport layer of a conductive polymer, -maximum (I)
A solution of a conductive polymer or its polymer intermediate represented by is formed into a thin film on an electrode using a spin coating method, a casting method, a dipping method, a barcoding method, a roll coating method, or the like.
膜厚としては、50人〜IOμm、電流密度を上げて発
光効率を上げるために好ましくは100人〜171mで
ある。The film thickness is preferably 50 μm to 10 μm, and preferably 100 μm to 171 μm in order to increase current density and luminous efficiency.
なお、高分子中間体を薄膜化した場合は、そ□の後に熱
処理を行って導電性高分子に変換させる。In addition, when the polymer intermediate is made into a thin film, heat treatment is performed after that to convert it into a conductive polymer.
また、導電性高分子に従来の電子写真で電荷輸送材料と
して使用されている材料を混合して用いてもよい。これ
らの電荷輸送材料としてトリフェニルアミン系等が例示
される。Further, a material used as a charge transport material in conventional electrophotography may be mixed with the conductive polymer. Examples of these charge transport materials include triphenylamine materials.
本発明において使用の発光層としては特に限定されず、
例えば特開昭57−51781、同59−1.9439
3号公報に記載されているもの等、公知のものが使用可
能である。The light-emitting layer used in the present invention is not particularly limited,
For example, JP-A-57-51781, JP-A-59-1.9439
Known materials such as those described in Publication No. 3 can be used.
本発明において、発光層、電荷輸送層は、それぞれ化合
物単独で用いるが、さらに公知の電荷輸送材料や発光材
料と組み合わせて使用してもよい。In the present invention, the light emitting layer and the charge transport layer each use a compound alone, but may also be used in combination with a known charge transport material or light emitting material.
すなわち、本発明における導電性高分子の電荷輸送層や
公知の電荷輸送体(例えば、トリフェニルジアミン誘導
体、ペリレン誘導体など)と組み合わすことができ、ま
た、本発明における導電性高分子の電荷輸送層は、公知
の発光体(トリス(8ヒドロキシキノリン)アルミニウ
ム縮合多環化合物及びその誘導体等)と組み合わせるこ
ともできる。That is, the charge transport layer of the conductive polymer in the present invention can be combined with a known charge transporter (for example, a triphenyldiamine derivative, a perylene derivative, etc.), and the charge transport layer of the conductive polymer in the present invention The layer can also be combined with known light emitters, such as tris(8-hydroxyquinoline)aluminum fused polycyclic compounds and derivatives thereof.
また、電荷輸送層と発光層は(発光層/電荷輸送層)ま
たは(電荷輸送層/発光層〕という2層の組み合わせの
他に、(電荷輸送層/発光層/電荷輸送層)という3層
の組み合わせの構造をとることもできる。3層の場合の
2つの電荷輸送層は異なった材料であってもよい。In addition, the charge transport layer and the light-emitting layer are not only a combination of two layers (light-emitting layer/charge transport layer) or (charge transport layer/light-emitting layer), but also a three-layer combination (charge transport layer/light-emitting layer/charge transport layer). In the case of three layers, the two charge transport layers may be made of different materials.
すなわち、本発明の有機EL素子の構造の一例(電荷輸
送層/発光層/電荷輸送層)を具体的に示すと第1図の
ように、透明基板1上に透明電極2を設け、さらにその
上に電荷輸送層3、発光層4、電荷輸送層3および電極
5を設けた構造を有している。That is, to specifically show an example of the structure of the organic EL element of the present invention (charge transport layer/light emitting layer/charge transport layer), as shown in FIG. 1, a transparent electrode 2 is provided on a transparent substrate 1, and It has a structure in which a charge transport layer 3, a light emitting layer 4, a charge transport layer 3, and an electrode 5 are provided thereon.
本発明のEL素子の製造過程で用いる電子注入陰極材料
としては、AI、 In、 Mg、 Mg−Ag合金、
In−Ag合金、グラファイト薄膜等のイオン化工ネル
キーの小さい金属が用いられる。膜厚としては、50人
〜1μmの素子をできる限り薄くするために好ましくは
500人〜1000人で、作製方法としては真空蒸着法
、スパッタリング法等が用いられる。Electron injection cathode materials used in the manufacturing process of the EL device of the present invention include AI, In, Mg, Mg-Ag alloy,
Metals with low ionization energy, such as In--Ag alloys and graphite thin films, are used. The film thickness is preferably 500 to 1,000 in order to make the device as thin as possible, with a thickness of 50 to 1 μm, and a vacuum evaporation method, a sputtering method, etc. are used as the manufacturing method.
本発明のEL素子における電荷輸送層の材料はは熱的に
安定であり、導電性高分子あるいはその中間体が有機溶
媒に可溶であり賦形性に富み、素子作製が容易に行える
。The material for the charge transport layer in the EL device of the present invention is thermally stable, the conductive polymer or its intermediate is soluble in organic solvents, and has excellent shapeability, making the device easy to manufacture.
本発明によるEL素子によれば、バックライトとしての
面状光源、フラットパネルデイスプレィ等の装置として
の好適に使用される。The EL element according to the present invention can be suitably used as a planar light source as a backlight, a device such as a flat panel display, etc.
下記に本発明の実施例を示し、さらに詳しく説明する。 Examples of the present invention will be shown below and explained in more detail.
ただし、本発明は以下の実施例によって何ら制限される
ものではない。However, the present invention is not limited in any way by the following examples.
実施例 1
モレキュラー・クリスタルス・アンド・リキッド・クリ
スタルス(Mat、 Cryst、 Liq、 Cry
st、 )パートE 、 119.1.73〜180頁
(l985)に記載の方法に従い、過硫酸アンモニウム
を酸化剤としてアニリンを化学酸化重合してポリアニリ
ン(以下PAn)を得た。その後、水酸化ナトリウム水
溶液処理、洗浄、乾燥し、N、N−ジメチルホルムアミ
ド(DMF)に溶解させた。ITO薄膜をスパッタリン
グによって200人の厚みで付けたガラス基板にPAn
のDMF溶液を回転数2000rpmのスピンコーティ
ング法により200人の厚みで塗布した。その後、20
0℃で2時間乾燥した。次いでその上にペリレンを蒸着
法によって作成した。蒸着のときの真空度は5X 1O
−6Torrでペリレンの膜厚は1800人であった。Example 1 Molecular Crystals and Liquid Crystals (Mat, Cryst, Liq, Cry
Polyaniline (hereinafter referred to as PAn) was obtained by chemical oxidative polymerization of aniline using ammonium persulfate as an oxidizing agent according to the method described in Part E, 119.1.73-180 (1985). Thereafter, it was treated with an aqueous sodium hydroxide solution, washed, dried, and dissolved in N,N-dimethylformamide (DMF). PAn was deposited on a glass substrate on which an ITO thin film was attached by sputtering to a thickness of 200 mm.
The DMF solution was applied to a thickness of 200 mm by spin coating at a rotation speed of 2000 rpm. After that, 20
It was dried at 0°C for 2 hours. Next, perylene was formed thereon by vapor deposition. The degree of vacuum during vapor deposition is 5X 1O
At -6 Torr, the perylene film thickness was 1800 mm.
さらにその上にアルミニウム電極を蒸着してEL素子を
完成させた。この素子に電圧45Vを印加したところ、
電流密度42mA/cm’の電流が流れ、輝度0、 l
1cd/m2の紫色のEL発光が観察された。輝度は電
流密度に比例していた。Furthermore, an aluminum electrode was deposited on top of it to complete the EL device. When a voltage of 45V was applied to this element,
A current with a current density of 42 mA/cm' flows, the brightness is 0, l
Purple EL emission of 1 cd/m2 was observed. The brightness was proportional to the current density.
実施例 2
特開平1−9221号公報に記載の方法に従い、2゜5
−チェニレンジスルホニウムプロミドをアルカリで重合
し、メタノールと反応させてポリ−2,5チエニレンビ
ニレン(PTV)の中間体であるポリ−2,5−チェニ
レン−メトキシエチレンを得た。Example 2 According to the method described in JP-A-1-9221, 2°5
-Thienylene disulfonium bromide was polymerized with an alkali and reacted with methanol to obtain poly-2,5-thienylene-methoxyethylene, which is an intermediate of poly-2,5-thienylene vinylene (PTV).
ITO薄膜をスパッタリングによって200人の厚みで
付けたガラス基板に、得られたPTV中間体のDMF溶
液を回転数2000rpmのスピンコーティング法によ
り700人の厚みで塗布した。その後、N2中で200
℃、2時間熱処理した。熱処理することによりPTV中
間体の膜厚は400人に減少していた。ここで、赤外吸
収スペクトルを測定したところ1100cm−’の中間
体特有の吸収ピークがな(なっていたことから、PTV
構造を確認し、電荷輸送材料とした。A DMF solution of the obtained PTV intermediate was applied to a glass substrate having a thickness of 700 mm by spin coating at a rotation speed of 2000 rpm onto a glass substrate on which an ITO thin film had been applied by sputtering to a thickness of 200 mm. After that, 200 in N2
It was heat-treated at ℃ for 2 hours. The film thickness of the PTV intermediate was reduced to 400 by heat treatment. Here, when the infrared absorption spectrum was measured, there was no absorption peak specific to the intermediate at 1100 cm-', so it was found that PTV
The structure was confirmed and it was used as a charge transport material.
次に、特開平1−79217の記載の方法に従い、2゜
5−ジヘプチルオキシーp−キシリレンプロミドをt−
ブトキシカリウムで縮重合して、ポリ−2゜5−ジヘプ
チルオキシーp−フェニレンビニレン(HO−PPV)
を得た。このクロロホルム溶液を上記TTO上に塗布し
たPTV薄膜上に回転数2000rpmのスピンコーテ
ィング法により1000人の厚みで塗布し、発光材料と
した。さらに、その上にAI主電極蒸着によって100
0人の厚みで作製した。Next, according to the method described in JP-A-1-79217, t-
Condensation polymerization with butoxypotassium produces poly-2゜5-diheptyloxy-p-phenylenevinylene (HO-PPV)
I got it. This chloroform solution was applied to a thickness of 1,000 coats on the PTV thin film coated on the TTO by spin coating at a rotation speed of 2,000 rpm to obtain a luminescent material. Furthermore, on top of that, 100
It was made with a thickness of 0.
ITO電極、AI主電極は銀ペーストで端子をとり、エ
ポキシ樹脂で固定した。The terminals of the ITO electrode and the AI main electrode were made with silver paste and fixed with epoxy resin.
作製した2層積層型素子に電圧35Vを印加したところ
、7mA/cm2の電流密度で、輝度0.12cd/m
2の黄橙色の発光が観察された。発光スペクトルのピー
ク波長は580nmで、HO−PPVスピンコード薄膜
の蛍光のスペクトルと一致していた。また、発光強度は
電流密度に比例して増加した。When a voltage of 35 V was applied to the fabricated two-layer stacked element, the brightness was 0.12 cd/m at a current density of 7 mA/cm2.
2 yellow-orange luminescence was observed. The peak wavelength of the emission spectrum was 580 nm, which matched the fluorescence spectrum of the HO-PPV spin cord thin film. Furthermore, the luminescence intensity increased in proportion to the current density.
実施例 3
特開昭59−199746号公報の記載に従い、p−キ
シリレン−ビス(ジエチルスルホニウムプロミド)を水
溶液中、水酸化ナトリウム水溶液を滴下して重合し、ポ
リ−p−フェニレンビニレン(以下PPV)の中間体で
あるポリ−ルーフユニしンビニレンービス(ジエチルス
ルホニウムプロミド)エチレン(以下PPV中間体)水
溶液を得た。実施例2においてPTVの中間体のかわり
に、得られたPPV中間体を用いて製膜した。製膜条件
は、PPV中間体水溶液を回転数2000rpmのスピ
ンコーティング法により600人の厚みで塗布した。そ
の後、PPV中間体スピンコード膜を370℃で2時間
熱処理しPPV薄膜とした。熱処理後の膜厚は300人
であった。PPV構造への変化は赤外吸収スペクトルの
変化により確認した。これを電荷輸送層とした。さらに
、その上に実施例2と同様にしてHO−PPVをスピン
コーティングし、AI主電極蒸着してEL素子を完成さ
せた。Example 3 According to the description in JP-A-59-199746, p-xylylene-bis(diethylsulfonium bromide) was polymerized by dropping an aqueous sodium hydroxide solution into an aqueous solution to obtain poly-p-phenylene vinylene (hereinafter referred to as PPV). ), an aqueous solution of poly-roof vinylene bis(diethylsulfonium bromide) ethylene (hereinafter referred to as PPV intermediate) was obtained. In Example 2, the obtained PPV intermediate was used instead of the PTV intermediate to form a film. The film was formed by applying a PPV intermediate aqueous solution to a thickness of 600 mm by spin coating at a rotation speed of 2000 rpm. Thereafter, the PPV intermediate spin cord film was heat-treated at 370° C. for 2 hours to form a PPV thin film. The film thickness after heat treatment was 300 mm. Changes to the PPV structure were confirmed by changes in the infrared absorption spectrum. This was used as a charge transport layer. Furthermore, HO-PPV was spin-coated thereon in the same manner as in Example 2, and an AI main electrode was deposited to complete the EL device.
作製した2層積層型素子に、電圧30Vを印加したとこ
ろ、17mA/cがの電流密度で、輝度0゜09cd/
m2の黄橙色の発光が確認された。発光スペクトルは実
施例2と同様であった。When a voltage of 30 V was applied to the fabricated two-layer stacked element, the brightness was 0°09 cd/c at a current density of 17 mA/c.
Yellow-orange light emission of m2 was confirmed. The emission spectrum was similar to Example 2.
実施例 4
実施例1と同様にしてPAnを製膜して電荷輸送層とし
た。さらに、その上に実施例2と同様にしてHO−PP
Vをスピンコーティングし、A1電極を蒸着して素子を
完成させた。Example 4 A PAn film was formed in the same manner as in Example 1 to form a charge transport layer. Furthermore, HO-PP was added thereon in the same manner as in Example 2.
The device was completed by spin coating V and depositing the A1 electrode.
作製した2層積層型素子に、電圧50Vを印加したとこ
ろ、2mA/Cm2の電流密度で、輝度0.04cd/
m!の黄橙色の発光が確認された。発光スペクトルは実
施例2と同様であった。When a voltage of 50 V was applied to the fabricated two-layer stacked element, the luminance was 0.04 cd/cm at a current density of 2 mA/Cm2.
m! Yellow-orange luminescence was confirmed. The emission spectrum was similar to Example 2.
第1図は本発明における有機エレクトロルミネッセンス
素子の一実施例の概念的な断面構造を表す。FIG. 1 shows a conceptual cross-sectional structure of an embodiment of an organic electroluminescent device according to the present invention.
Claims (1)
電極間に発光層および電荷輸送層を有する有機エレクト
ロルミネッセンス素子において、電荷輸送層として一般
式(I) −Ar−B−(I) Ar:炭素数6以上の芳香族炭化水素基、または炭素数
4以上のヘテロ環芳香族炭化水素基、 B:−CH=CH−基あるいは−NH−基で示される繰
り返し単位を有する導電性高分子を用いることを特徴と
する有機エレクトロルミネッセンス素子 (2)導電性高分子がポリ−p−フェニレンビニレン、
ポリ−2,5−ジアルキル−p−フェニレンビニレン、
ポリ−2,5−ジアルコキシ−p−フェニレンビニレン
、ポリ−2,5−チエニレンビニレンまたはポリアニリ
ンである請求項1記載の有機エレクトロルミネッセンス
素子[Claims] (l) An organic electroluminescent device having a light-emitting layer and a charge transport layer between a pair of electrodes, at least one of which is transparent or translucent, wherein the charge transport layer has the general formula (I) -Ar-B -(I) Ar: an aromatic hydrocarbon group having 6 or more carbon atoms, or a heterocyclic aromatic hydrocarbon group having 4 or more carbon atoms; B: a repeating unit represented by a -CH=CH- group or -NH- group; (2) An organic electroluminescent device characterized by using a conductive polymer having the following characteristics: (2) The conductive polymer is poly-p-phenylenevinylene,
poly-2,5-dialkyl-p-phenylene vinylene,
The organic electroluminescent device according to claim 1, which is poly-2,5-dialkoxy-p-phenylene vinylene, poly-2,5-thienylene vinylene, or polyaniline.
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP07522590A JP3265395B2 (en) | 1990-03-22 | 1990-03-22 | Organic electroluminescence device |
EP91301416A EP0443861B2 (en) | 1990-02-23 | 1991-02-22 | Organic electroluminescence device |
DE69110922T DE69110922T2 (en) | 1990-02-23 | 1991-02-22 | Organic electroluminescent device. |
US07/861,633 US5317169A (en) | 1990-02-23 | 1992-04-01 | Organic electroluminescence device |
US08/444,917 US5726457A (en) | 1990-02-23 | 1995-05-19 | Organic electroluminescence device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP07522590A JP3265395B2 (en) | 1990-03-22 | 1990-03-22 | Organic electroluminescence device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH03273087A true JPH03273087A (en) | 1991-12-04 |
JP3265395B2 JP3265395B2 (en) | 2002-03-11 |
Family
ID=13570070
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP07522590A Expired - Lifetime JP3265395B2 (en) | 1990-02-23 | 1990-03-22 | Organic electroluminescence device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP3265395B2 (en) |
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