JPH0327026A - Liquid crystal display device - Google Patents
Liquid crystal display deviceInfo
- Publication number
- JPH0327026A JPH0327026A JP1161341A JP16134189A JPH0327026A JP H0327026 A JPH0327026 A JP H0327026A JP 1161341 A JP1161341 A JP 1161341A JP 16134189 A JP16134189 A JP 16134189A JP H0327026 A JPH0327026 A JP H0327026A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- metal layer
- liquid crystal
- crystal display
- thickness
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004973 liquid crystal related substance Substances 0.000 title claims description 16
- 239000002184 metal Substances 0.000 claims abstract description 25
- 229910052751 metal Inorganic materials 0.000 claims abstract description 25
- 239000000758 substrate Substances 0.000 abstract description 6
- 239000011521 glass Substances 0.000 abstract description 4
- 238000004544 sputter deposition Methods 0.000 abstract description 3
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 abstract 1
- PBCFLUZVCVVTBY-UHFFFAOYSA-N tantalum pentoxide Inorganic materials O=[Ta](=O)O[Ta](=O)=O PBCFLUZVCVVTBY-UHFFFAOYSA-N 0.000 abstract 1
- 239000010931 gold Substances 0.000 description 7
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 6
- 229910052737 gold Inorganic materials 0.000 description 6
- 238000000034 method Methods 0.000 description 3
- 238000000059 patterning Methods 0.000 description 3
- 238000007743 anodising Methods 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 241000430525 Aurinia saxatilis Species 0.000 description 1
- 240000002853 Nelumbo nucifera Species 0.000 description 1
- 235000006508 Nelumbo nucifera Nutrition 0.000 description 1
- 235000006510 Nelumbo pentapetala Nutrition 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- VNNRSPGTAMTISX-UHFFFAOYSA-N chromium nickel Chemical compound [Cr].[Ni] VNNRSPGTAMTISX-UHFFFAOYSA-N 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910001120 nichrome Inorganic materials 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
Landscapes
- Liquid Crystal (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
この発明は非春型抵抗素子を用いる液晶表示素子に焦り
、特に表示特性に優れる液晶表示素子の構成に関する。DETAILED DESCRIPTION OF THE INVENTION [Industrial Field of Application] The present invention relates to a liquid crystal display element using a non-spring type resistive element, and particularly to a structure of a liquid crystal display element having excellent display characteristics.
金属一絶縁体一金属の３４構造からなる非ｌＭ型抵抗素
子（ＭＩＭ素子）は印加電圧が低い場合には高い抵抗を
示し、印加電圧が高い場合には低い抵抗を示す。この特
性を利用して、ＭＩＭ素子をスイッチング素子として用
い、液晶表示の駆動を行うことができる。このＭ Ｉ
Ｍ素子はガラス基板などの上にスバクタ法などで容易に
形或することができ、しかもフォトリソグラフィー法に
よるバターニング工程が薄膜トランジスタなど他のスイ
ッチング素子とくらべて少なく、製造コストを低くでき
る利点がある。第２図は従来のＭＩＭ素子ネ
を用いた液晶表示素子を示し第２図（ａ）はその埋部平
而図である。表面に絶縁層が形成された下部金ｒｉＲ層
ｌ，画素電極３および上部金属層２が示される。第２図
《Ｎは第２図（ａ）のＡ−Ａ矢視図で絶縁基板４。下部
金属層１，絶縁層５●上部金１！／１２および画素電極
３が示される。下部金属ＮＩＩ１としては゛ｒａ，絶縁
層５はＴａを陽極酸化して得られるＴａ２０ｓ ｖ上部
金属層２はＮｉＣｒ／Ａｕ ｅ画素電極としてＩＴＯ（
インジウム，スズ酸化物）が用いられる。A non-IM type resistance element (MIM element) having a metal-insulator-metal 34 structure exhibits high resistance when the applied voltage is low, and exhibits low resistance when the applied voltage is high. Utilizing this characteristic, the MIM element can be used as a switching element to drive a liquid crystal display. This MI
The M element can be easily formed on a glass substrate or the like by the Subactor method, and it also requires less patterning process using photolithography compared to other switching elements such as thin film transistors, which has the advantage of lowering manufacturing costs. . FIG. 2 shows a liquid crystal display element using a conventional MIM element, and FIG. 2(a) is a physical diagram of its embedded part. A lower gold riR layer 1 with an insulating layer formed on its surface, a pixel electrode 3, and an upper metal layer 2 are shown. FIG. 2 《N is the insulating substrate 4 in the AA arrow view of FIG. 2(a). Lower metal layer 1, insulating layer 5●Top gold 1! /12 and pixel electrode 3 are shown. The lower metal NII1 is made of Ra, the insulating layer 5 is Ta20s obtained by anodizing Ta, the upper metal layer 2 is NiCr/Au, and the pixel electrode is made of ITO (
Indium, tin oxide) are used.
オフにより光の透過．遮断が制御されるが、画素竃極３
の間隙６は下部金属層が形或されないため、液晶表示素
子に入射した光はそのまま透過する。Light transmission when turned off. Although the blocking is controlled, the pixel pole 3
Since the lower metal layer is not formed in the gap 6, the light incident on the liquid crystal display element is transmitted as it is.
そのために液晶表示素子のオンオフ時のコントラストが
低下するという問題があった。光を遮断して得られる黒
表示において画素電極間隙部６における光のもれが生じ
るからである。この発明は上述の点に鑑みてなされ、そ
の目的は画素電極間からの光のもれを防止することによ
り表示特性に優れる液晶表示素子を提供することにある
。Therefore, there is a problem in that the contrast during on/off of the liquid crystal display element is reduced. This is because light leakage occurs in the pixel electrode gap 6 in a black display obtained by blocking light. The present invention has been made in view of the above-mentioned points, and its object is to provide a liquid crystal display element that has excellent display characteristics by preventing light leakage from between pixel electrodes.
上述の目的はこの発明によれば下部金属層とその上に形
成された絶縁層とを上部金Ｉｌ４Ｎ４を介して画素電極
と電気的に接続してなる液晶表示素子において、下部金
属層の形成されない画素電極の間に遮光層７を備えるこ
とにより達成される。下部金屑層と迩光層は同一もしく
は異なる材料で形成することができる。According to the present invention, the above-mentioned object is to provide a liquid crystal display device in which a lower metal layer and an insulating layer formed thereon are electrically connected to a pixel electrode via an upper gold Il4N4 layer, in which the lower metal layer is not formed. This is achieved by providing a light shielding layer 7 between the pixel electrodes. The lower gold dust layer and the optical layer can be formed of the same or different materials.
遮光層を設けると光のもれがなくなり、コントラストが
向上する。Providing a light shielding layer eliminates light leakage and improves contrast.
次にこの発明の実施例を図面に基いて説明する。 Next, embodiments of the present invention will be described based on the drawings.
第１図はこの発明の実施例に係る液晶表示素子を示す要
部平面図である。この素子は次のようｔこして！ｌｌ４
製することができる。走査電極となる下部金馬層１をス
パッタ法により，Ｔａ！ｌ’Ｊ！にて厚さ５００ｎｍ形
成したのち１０μ慣巾にバターニングする。次に下部金
１＄＃１のＴａＩＩＬ［を陽極酸化法により酸化し６０
ｎｍ厚みのＴａｚＯａ ！！！．縁層５を形成する。ガ
ラス基板４上にＩＴＯＩｌｉｌをｔｏｏ ｐｍ厚に形成
し、バターニングにより、画素電罹３を形成する。次に
Ｃｕからなる上部金属層２をスバッタ法により１００ｎ
ｍ厚に形或し，パターニングすることによって巾５μｍ
の上部金属層２を形成する。上述の例では上部金属層は
下部金属層ｌの上に形威されるが上部金属層２人をａ光
層７の上に形取することもできる。上述の例では下部金
属層ｌと迩允鳴７は同じものであるからである。FIG. 1 is a plan view of essential parts of a liquid crystal display element according to an embodiment of the invention. This element is made as follows! ll4
can be manufactured. The lower gold horse layer 1, which will become the scanning electrode, is formed by sputtering using Ta! l'J! After forming the film to a thickness of 500 nm, it is patterned to a width of 10 μm. Next, the lower gold 1$#1 TaIIL [was oxidized by anodizing method to 60%
nm thick TazOa! ! ! ．． A border layer 5 is formed. ITOI lil is formed to a thickness of too pm on a glass substrate 4, and a pixel electrode layer 3 is formed by patterning. Next, the upper metal layer 2 made of Cu is coated with a thickness of 100 nm by the sputtering method.
By shaping and patterning to a thickness of m, the width is 5 μm.
An upper metal layer 2 is formed. In the above example, the upper metal layer is formed on the lower metal layer l, but two upper metal layers can also be formed on the a-optical layer 7. This is because in the above example, the lower metal layer 1 and the layer 7 are the same.
この発明によれば下部金属層とその上に形欣された絶縁
層とを上部金属層を介して画素ｉｔ極と亀気的に接続し
てなる液晶表示素子において、下部金属層の形或されな
い画素電極の間に蓮九層を備えるので、画素電極の間か
らの光のもれがなくなり、表示特性に優れる液晶表示素
子を得ろことができる。According to the present invention, in a liquid crystal display element in which a lower metal layer and an insulating layer formed thereon are electrically connected to a pixel IT electrode via an upper metal layer, the lower metal layer is not shaped. Since the lotus layer is provided between the pixel electrodes, there is no leakage of light between the pixel electrodes, making it possible to obtain a liquid crystal display element with excellent display characteristics.
第１図はこの発明の実施例に係る液晶表示素子の要部平
面図、第２図は従来の液晶表示素子を示し．第２図（ａ
ｔは要部平面図、第２図ら》はｆ４２図（ａ）のＡ−Ａ
矢視図である。
１：下部金！Ｓ層、２，２Ａ：上部金属層、３：画素電
極、４：ガラス基板、５：絶縁層、６：Ｉｌｉｉ素電極
間隙、７：３ｌＩｔ光層。FIG. 1 is a plan view of essential parts of a liquid crystal display element according to an embodiment of the present invention, and FIG. 2 shows a conventional liquid crystal display element. Figure 2 (a
t is a plan view of the main part, Figure 2 etc. is A-A in Figure f42 (a)
It is an arrow view. 1: Bottom gold! S layer, 2, 2A: upper metal layer, 3: pixel electrode, 4: glass substrate, 5: insulating layer, 6: Ilii elementary electrode gap, 7: 3lIt optical layer.
Claims (1)
属層を介して画素電極と電気的に接続してなる液晶表示
素子において、 下部金属層の形成されない画素電極の間に遮光層を設け
ることを特徴とする液晶表示素子。[Claims] 1) In a liquid crystal display element in which a lower metal layer and an insulating layer formed thereon are electrically connected to a pixel electrode via an upper metal layer, a pixel in which a lower metal layer is not formed. A liquid crystal display element characterized by providing a light shielding layer between electrodes.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1161341A JPH0327026A (en) | 1989-06-23 | 1989-06-23 | Liquid crystal display device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1161341A JPH0327026A (en) | 1989-06-23 | 1989-06-23 | Liquid crystal display device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0327026A true JPH0327026A (en) | 1991-02-05 |
Family
ID=15733241
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1161341A Pending JPH0327026A (en) | 1989-06-23 | 1989-06-23 | Liquid crystal display device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0327026A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1996014599A1 (en) * | 1994-11-08 | 1996-05-17 | Citizen Watch Co., Ltd. | Liquid crystal display |
-
1989
- 1989-06-23 JP JP1161341A patent/JPH0327026A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1996014599A1 (en) * | 1994-11-08 | 1996-05-17 | Citizen Watch Co., Ltd. | Liquid crystal display |
| US6128050A (en) * | 1994-11-08 | 2000-10-03 | Citizen Watch Co., Ltd. | Liquid crystal display device with separated anode oxide electrode |
| US6327443B1 (en) | 1994-11-08 | 2001-12-04 | Citizen Watch Co., Ltd. | Liquid crystal display device |
| US6388720B1 (en) | 1994-11-08 | 2002-05-14 | Citizen Watch Co., Ltd. | Liquid crystal display including signal electrodes connected to each other by first anode oxide electrode and auxiliary electrode connected to second anode oxide electrode |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US5234541A (en) | Methods of fabricating mim type device arrays and display devices incorporating such arrays | |
| GB2091468A (en) | Matrix liquid crystal display device and method of manufacturing the same | |
| JPH02156226A (en) | Liquid crystal display element | |
| GB2306042A (en) | Liquid crystal display device | |
| US5539549A (en) | Active matrix substrate having island electrodes for making ohmic contacts with MIM electrodes and pixel electrodes | |
| JPH0327026A (en) | Liquid crystal display device | |
| JP2543696B2 (en) | Electro-optical device | |
| US5739547A (en) | Reflection type display | |
| JP2794198B2 (en) | Nonlinear resistance element and liquid crystal element using the same | |
| JP2812720B2 (en) | Method of manufacturing reflective MIM active matrix substrate | |
| JPH10104644A (en) | Substrate for liquid crystal display device | |
| JPS628127A (en) | Liquid crystal electrooptic device | |
| JPS5936225A (en) | Liquid crystal display device and its production | |
| JPH0345930A (en) | Two-terminal type nonlinear element | |
| JP3229905B2 (en) | Liquid crystal display panel and manufacturing method thereof | |
| JP3102835B2 (en) | Display device | |
| JPH01120539A (en) | Liquid crystal display device | |
| JPH0418284B2 (en) | ||
| JPH0462050B2 (en) | ||
| JPH03174123A (en) | Electrooptical device and production thereof | |
| JPH06235941A (en) | Liquid crystal display device and its manufacture | |
| JPH063702A (en) | Solid state device having nonlinear element | |
| JPH04235530A (en) | Liquid crystal display element | |
| JPS63168628A (en) | Liquid crystal device | |
| JPH0352277A (en) | Manufacture of nonlinear element |