JPH03270132A - Method and device for cleaning semiconductor wafer - Google Patents
Method and device for cleaning semiconductor waferInfo
- Publication number
- JPH03270132A JPH03270132A JP6833390A JP6833390A JPH03270132A JP H03270132 A JPH03270132 A JP H03270132A JP 6833390 A JP6833390 A JP 6833390A JP 6833390 A JP6833390 A JP 6833390A JP H03270132 A JPH03270132 A JP H03270132A
- Authority
- JP
- Japan
- Prior art keywords
- cleaning
- radical oxygen
- liquid
- cleaning liquid
- wavelength
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004140 cleaning Methods 0.000 title claims abstract description 70
- 239000004065 semiconductor Substances 0.000 title claims description 19
- 238000000034 method Methods 0.000 title claims description 12
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 53
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 49
- 239000001301 oxygen Substances 0.000 claims abstract description 49
- 239000007788 liquid Substances 0.000 claims abstract description 39
- 235000012431 wafers Nutrition 0.000 claims abstract description 32
- 238000004519 manufacturing process Methods 0.000 claims description 6
- 239000012159 carrier gas Substances 0.000 abstract description 9
- 239000002245 particle Substances 0.000 abstract description 8
- 239000012535 impurity Substances 0.000 abstract description 7
- 230000003749 cleanliness Effects 0.000 abstract description 3
- 238000003860 storage Methods 0.000 abstract description 3
- 239000000243 solution Substances 0.000 description 11
- 239000002184 metal Substances 0.000 description 8
- 229910052751 metal Inorganic materials 0.000 description 8
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 6
- 239000000203 mixture Substances 0.000 description 5
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 4
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 4
- 229910021529 ammonia Inorganic materials 0.000 description 3
- 239000000356 contaminant Substances 0.000 description 3
- 238000000354 decomposition reaction Methods 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 239000011259 mixed solution Substances 0.000 description 2
- 239000005416 organic matter Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- -1 about 30% HzO Substances 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Abstract
Description
【発明の詳細な説明】
（産業上の利用分野）
本発明は、］Ｃ製造における半導体ウェハの洗浄方ｒ去
及び洗浄装置に関するものである。DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application) The present invention relates to a cleaning method and a cleaning apparatus for semiconductor wafers in C manufacturing.
（従来の技術）
従来、Ｉｃ１１ｙＪ造のための半導体ウェハ（以下、単
にウェハという）の洗浄は、専ら１１□０２を含む洗浄
液によって行われてきた。このような洗浄液には、
アンモニアの混合液として、
約３０％〜Ｉ＋ 、 ０１１液、約３０％ＨｚＯ，液、
純水とを混合したもの（Ｎ１１．０１１／ＩＩ！Ｏ□／
１１２０）、塩酸の混合液として、
約３５％ＨＣＩ液、約３０％ｈＯ４、
純水とを混合したもの（ＨＣＩ／＋１．（ｈ／ＩＩ！Ｏ
）、硫酸の混合液として、
Ｈ，ＳＯ，とＨ２Ｏ３を混合したもの（ｌｌｚｓＯ４／
ＨｚＯｚ）が用いられ、使用時に温度を上げて使用され
ていた。(Prior Art) Conventionally, semiconductor wafers (hereinafter simply referred to as wafers) for manufacturing Ic11yJ have been cleaned using a cleaning solution containing exclusively 11□02. Such a cleaning solution includes, as a mixed solution of ammonia, about 30% to I+, 011 solution, about 30% HzO, solution,
Mixed with pure water (N11.011/II!O□/
1120), a mixture of hydrochloric acid, approximately 35% HCI solution, approximately 30% hO4, and pure water (HCI/+1.(h/II!O)
), a mixture of H, SO, and H2O3 as a sulfuric acid mixture (llzsO4/
HzOz) was used, and the temperature was raised during use.
これらの洗浄液の作用は、アンモニア混合液では、アン
モニアがウェハの表面をエツチングして汚染物を除去し
、Ｈ，Ｏ□の分解によって発生したラジカル酸素０４が
、ウェハの表面を酸化して汚染物の再付着を防止するこ
とにより、表面を清浄にしていた。The action of these cleaning solutions is that in an ammonia mixed solution, ammonia etches the surface of the wafer and removes contaminants, and radical oxygen 04 generated by decomposition of H and O□ oxidizes the surface of the wafer and removes contaminants. The surface was kept clean by preventing re-adhesion.
塩酸の混合液では、ＩＩｃＩの溶解力で金属をイオン化
し、ｈＯ□の分解によって発生したラジカル酸素Ｏ０が
、ウェハの表面を酸化して汚染物の再付着を防止するこ
とにより、表面を清浄にしていた。In a hydrochloric acid mixture, the dissolving power of IIcI ionizes metals, and the radical oxygen O0 generated by the decomposition of hO□ oxidizes the wafer surface and prevents contaminants from re-attaching, thereby cleaning the surface. was.
また、硫酸の混合液では、ＩＩｚＳＯａの溶解力で金属
をイオン化し、Ｈ，０，の分解によって発生したラジカ
ル酸素Ｏ０が、有機物等をＣＯ，とＨｚＯに分解するこ
とによって、表面を清浄にしていた。In addition, in a sulfuric acid mixture, the dissolving power of IIzSOa ionizes metals, and the radical oxygen O0 generated by the decomposition of H,O decomposes organic matter into CO and HzO, thereby cleaning the surface. Ta.
このように従来のウェハの洗浄には、Ｈ，Ｏ，を含む洗
浄液が用いられており、この１１２０ ！が８．０とラ
ジカル酸素０８とに分解されることにより得られるラジ
カル酸素Ｏ０が、ウェハの表面の清浄に大きな役割を果
たしていた。As described above, in conventional wafer cleaning, a cleaning solution containing H, O, and the like are used, and this 1120! Radical oxygen O0 obtained by decomposing into 8.0 and radical oxygen O8 played a major role in cleaning the surface of the wafer.
（発明が解決しようとする課題）
しかし、以上述べた洗浄方法では、１１．０□液を含む
洗浄液を使用しているため、ｌ’ｌｚｏ□液中に不純物
として含まれる金属物がラジカル酸素０４の作用による
酸化の過程で、ウェハの表面に付着するという欠点があ
った。また、Ｉｌｇ（ｂ液が液体である為、その運搬時
や保管時に、Ｈ，Ｏ□液を収納している容器から離脱し
たものが粒子となり、液中のパーティクルが増す等の問
題点があった。(Problem to be Solved by the Invention) However, in the cleaning method described above, since a cleaning liquid containing 11.0□ liquid is used, metal substances contained as impurities in l'lzo□ liquid become radical oxygen 04 It has the disadvantage that it adheres to the surface of the wafer during the oxidation process due to the action of . In addition, since the Ilg (b liquid) is a liquid, there are problems such as particles that separate from the container containing the H, O□ liquid during transportation or storage, increasing the number of particles in the liquid. Ta.
本発明は、以上述べた、金属不純物とパーティクルが増
加するという問題点を除去するために、金属不純物が含
まれるＨ、０□液を使用せずに、洗浄液中にラジカル酸
素を存在させることにより、清浄度の高いウェハ表面を
得ることができる半導体ウェハの洗浄方法及びその洗浄
装置を提供することを目的とする。In order to eliminate the above-mentioned problem of increase in metal impurities and particles, the present invention eliminates the use of H, 0□ solution containing metal impurities, and by making radical oxygen exist in the cleaning solution. An object of the present invention is to provide a method for cleaning a semiconductor wafer and a cleaning apparatus therefor, which can obtain a wafer surface with high cleanliness.
（課題を解決するための手段）
本発明は、上記目的を達成するために、半導体製造工程
で用いられる半導体ウェハの洗浄方法において、０２を
導入して第１の波長の紫外線により０３を発生させる工
程と、該０３に第２の波長の紫外線によりラジカル酸素
Ｏ＊を発生させる工程と、該ラジカル酸素００を洗浄液
が満たされた洗浄槽に導入し、該洗浄液に該ラジカル酸
素Ｏ＊を含ませ、該洗浄液により半導体ウェハを洗浄、
するようにしたものである。(Means for Solving the Problems) In order to achieve the above object, the present invention provides a semiconductor wafer cleaning method used in a semiconductor manufacturing process, in which 02 is introduced and 03 is generated by ultraviolet rays of a first wavelength. a step of generating radical oxygen O* using ultraviolet rays of a second wavelength in said 03; and introducing said radical oxygen 00 into a cleaning tank filled with a cleaning liquid, and causing said cleaning liquid to contain said radical oxygen O*. , cleaning the semiconductor wafer with the cleaning solution;
It was designed to do so.
また、半導体製造工程で用いられる半導体ウェハの洗浄
装置において、第１及び第２の波長を発生する紫外線発
生ランプと、０２を導入して前記紫外線発生ランプによ
りラジカル酸素ｏ０を発生させる手段と、該ラジカル酸
素Ｏ“を洗浄液が満たされた洗浄槽に導入し、該洗浄液
により半導体ウェハを洗浄する手段を設けるようしにし
たものである。Further, in a semiconductor wafer cleaning apparatus used in a semiconductor manufacturing process, an ultraviolet generating lamp that generates first and second wavelengths, a means for introducing O2 to generate radical oxygen o0 by the ultraviolet generating lamp, and A means is provided for introducing radical oxygen O'' into a cleaning tank filled with a cleaning liquid and cleaning the semiconductor wafer with the cleaning liquid.
（作用）
本発明によれば、ラジカル酸素Ｏ０の発生に従来の（１
２０□液を用いず、紫外線により直接ラジカル酸素Ｏ０
を発生させるようにしたので、ラジカル酸素Ｏ゛が含ま
れる洗浄液には金属不純物が含まれることばない。また
、（１□０、液の容器への保存が必要でないため、パー
ティクルが発生することはなく、パーティクル量が増加
することはない。(Function) According to the present invention, the generation of radical oxygen O0 can be
20□ Radical oxygen O0 directly using ultraviolet light without using liquid
Since the cleaning solution contains radical oxygen O, there is no possibility that metal impurities will be included. In addition, (1□0) Since it is not necessary to store the liquid in a container, particles are not generated and the amount of particles does not increase.
（実施例）
以下、本発明の実施例について図面を参照しながら詳細
に説明する。(Example) Hereinafter, an example of the present invention will be described in detail with reference to the drawings.
図は本発明の実施例を示す半導体ウェハの洗浄装置の構
成図である。The figure is a configuration diagram of a semiconductor wafer cleaning apparatus showing an embodiment of the present invention.
この図に示すように、ラジカル酸素Ｏ“発生装置２に０
２導入部３、キャリアガス導入部４及びラジカル酸素Ｏ
０搬送バイブ５が設けられている。As shown in this figure, the radical oxygen O" generator 2 is
2 introduction part 3, carrier gas introduction part 4 and radical oxygen O
A zero conveyance vibrator 5 is provided.
ラジカル酸素Ｏ“発生装置２内には、波長１８５−の紫
外線（ＵＶ）を発生するランプと、波長２４５ ａｍの
紫外線（ＵＶ）を発生するランプとを備えたＵＶ発生ラ
ンプ１が設けられている。The radical oxygen O" generator 2 is provided with a UV generating lamp 1 that includes a lamp that generates ultraviolet rays (UV) with a wavelength of 185 am and a lamp that generates ultraviolet rays (UV) with a wavelength of 245 am. .
ラジカル酸素００発生装置２は、内面を鏡面として紫外
線を反射するようにするとラジカル酸素Ｏ０の発生の効
率が向上する。ラジカル酸素００発生装置２から導出さ
れたラジカル酸素ｏ”ｌＩＩ送パイプ５は洗浄液８の入
った洗浄槽６内に導入されている。このラジカル酸素Ｏ
０搬送バイブ５の途中にバルブ９が設けられており、更
に、先端部分は多数のラジカル酸素０１排出孔７が設け
られている。The radical oxygen 00 generating device 2 improves the efficiency of generating radical oxygen 00 by making the inner surface a mirror surface to reflect ultraviolet rays. The radical oxygen o'lII sending pipe 5 derived from the radical oxygen O00 generator 2 is introduced into a cleaning tank 6 containing a cleaning liquid 8.
A valve 9 is provided in the middle of the 0 transporting vibrator 5, and a large number of radical oxygen 01 discharge holes 7 are further provided at the tip.
次に、このウェハ洗浄装置を用いたウェハの洗浄方法を
説明する。Next, a wafer cleaning method using this wafer cleaning apparatus will be explained.
ラジカル酸素００発生装置２内にＯ７導入部３より０．
を導入して、波長１８５ｍ及び２４５ＭのＵＶ発生ラン
プ１を用いて、次の反応を行なわせる。0.0.0 is introduced into the radical oxygen generator 2 from the O7 introduction section 3.
was introduced, and the following reaction was carried out using a UV generating lamp 1 with wavelengths of 185 m and 245 M.
１８５閣 ２４５−
〇！ −ｍ−→Ｏｓ Ｏｓ −一一一一→Ｏ！＋０
１１この反応のように、まず第一段階として、導入した
Ｏｔを波長１８５ ｗｍのＵＶの作用によりＯｌに変換
させる０次に、第二段階として、変換したＯｌを波長２
４５ ｗａのＵｖの作用により、０２とラジカル酸素Ｏ
″とに分解させる。Ｏ３が０２とラジカル酸素Ｏ″に分
解し終わった後、キャリアガス導入部４よりキャリアガ
スを導入し、バルブ９を開きラジカル酸素Ｏ０をキャリ
アガスと共にラジカル酸素ｏ”ｌ送パイプ５に導き、洗
浄槽６中の洗浄液８にラジカル酸素Ｏ０排出孔７からラ
ジカル酸素０°を熔かし込む。次に、ウェハを洗浄槽６
に導入してウェハの洗浄を行う。185 Kaku 245- 〇! -m-→Os Os -1111→O! +0
11 As in this reaction, the first step is to convert the introduced Ot into Ol by the action of UV at a wavelength of 185 wm.Then, the second step is to convert the introduced Ot into Ol at a wavelength of 2
Due to the action of Uv of 45 wa, 02 and radical oxygen O
After O3 has been decomposed into 02 and radical oxygen O", carrier gas is introduced from the carrier gas inlet 4, and valve 9 is opened to send radical oxygen O0 and radical oxygen O"l together with the carrier gas. The wafer is introduced into the pipe 5, and radical oxygen 0° is melted into the cleaning liquid 8 in the cleaning tank 6 from the radical oxygen O0 discharge hole 7. Next, the wafer is transferred to the cleaning tank 6.
to clean the wafer.
ここで、洗浄槽６中の洗浄液中に熔けこんだラジカル酸
素Ｏ０は、ＨｔＯｔの分解番こまって生じたラジカル酸
素Ｏ０の作用と同しように、表面を酸化したり、有機物
をＣＯ□と１１！０□に分解する等の作用を行う。Here, the radical oxygen O0 dissolved in the cleaning liquid in the cleaning tank 6 oxidizes the surface and converts organic matter into CO□ and 11! It performs actions such as decomposing into 0□.
上記実施例で用いるキャリアガスは物性的に安定なもの
、例えばＮ、を用いると良い、また、キャリアガスを用
いずにＯｌのみを流しても良い。The carrier gas used in the above embodiments is preferably one that is physically stable, such as N, or only OI may be flowed without using a carrier gas.
なお、本発明は上記実施例に限定されるものではなく、
本発明の趣旨に基づいて種々の変形が可能であり、これ
らを本発明の範囲から排除するものではない。Note that the present invention is not limited to the above embodiments,
Various modifications are possible based on the spirit of the present invention, and these are not excluded from the scope of the present invention.
（発明の効果）
以上、詳細に説明したように、本発明によれば、１１．
０□液を使用せずにラジカル酸素０“が、直接洗浄液中
に導入されるので、Ｈ□０８液を容器に保管する必要が
なく、＋１．０．液の保管のために発生する洗浄液中の
パーティクルの増加が無い、また、ガスを使用したクリ
ーンな方法であるので、洗浄液に金属不純物の混入が無
いという効果を奏することができる。従って、洗浄液に
パーティクル及び金属不純物の混入が無いので、洗浄度
の高いウェハ表面を得ることが出来る。(Effects of the Invention) As described above in detail, according to the present invention, 11.
Since radical oxygen 0'' is directly introduced into the cleaning liquid without using the 0□ liquid, there is no need to store the H□08 liquid in a container, and there is no need to store the H□08 liquid in the cleaning liquid that is generated due to the storage of the +1.0. There is no increase in particles, and since it is a clean method that uses gas, it is possible to achieve the effect that there is no mixing of metal impurities into the cleaning liquid.Therefore, since there is no mixing of particles or metal impurities into the cleaning liquid, A highly clean wafer surface can be obtained.
更に、ラジカル酸素０１発生装置２で発生させたラジカ
ル酸素０１はＨ２Ｏ０液の代用となるものであるから、
本発明の洗浄方法及び洗浄装置はＩＩ 、Ｏ。Furthermore, since the radical oxygen 01 generated by the radical oxygen 01 generator 2 is a substitute for the H2O0 liquid,
The cleaning method and cleaning apparatus of the present invention are described in II, O.
液を用でいた従来のあらゆる洗浄工程に適用可能である
。It is applicable to all conventional cleaning processes that use liquids.
図は本発明の実施例を示す半導体ウェハの洗浄装置の構
成図である。
ｌ・・・Ｕｖ発生ランプ、２・・・ラジカル酸素０１発
生装置、３・・・Ｏ５導入部、４・・・キャリアガス導
入部、５・・・ラジカル酸素Ｏ“搬送パイプ、６・・・
洗浄槽、７・・・ラジカル酸素Ｏ＊排出孔、８・・・洗
浄液。The figure is a configuration diagram of a semiconductor wafer cleaning apparatus showing an embodiment of the present invention. 1... Uv generation lamp, 2... Radical oxygen 01 generator, 3... O5 introduction section, 4... Carrier gas introduction section, 5... Radical oxygen O" transport pipe, 6...
Cleaning tank, 7... Radical oxygen O* discharge hole, 8... Cleaning liquid.
Claims (2)
方法において、 （ａ）Ｏ＿２を導入して第１の波長の紫外線によりＯ＿
３を発生させる工程と、 （ｂ）該Ｏ＿３に第２の波長の紫外線によりラジカル酸
素Ｏ＾＊を発生させる工程と、 （ｃ）該ラジカル酸素Ｏ＾＊を洗浄液が満たされた洗浄
槽に導入し、該洗浄液に該ラジカル酸素Ｏ＾＊を含ませ
、該洗浄液により半導体ウェハを洗浄することを特徴と
する半導体ウェハの洗浄方法。(1) In a method for cleaning semiconductor wafers used in the semiconductor manufacturing process, (a) O_2 is introduced and O_2 is exposed to ultraviolet light of a first wavelength.
(b) generating radical oxygen O^* from the O_3 with ultraviolet rays of a second wavelength; (c) introducing the radical oxygen O^* into a cleaning tank filled with cleaning liquid; A method for cleaning a semiconductor wafer, comprising: impregnating the cleaning liquid with the radical oxygen O^*, and cleaning the semiconductor wafer with the cleaning liquid.
装置において、 （ａ）第１及び第２の波長を発生する紫外線発生ランプ
と、 （ｂ）Ｏ＿２を導入して前記紫外線発生ランプによりラ
ジカル酸素Ｏ＾＊を発生させる手段と、 （ｃ）該ラジカル酸素Ｏ＾＊を洗浄液が満たされた洗浄
槽に導入し、該洗浄液により半導体ウェハを洗浄する手
段を具備する半導体ウェハの洗浄装置。(2) In a semiconductor wafer cleaning apparatus used in a semiconductor manufacturing process, (a) an ultraviolet generating lamp that generates first and second wavelengths, and (b) radical oxygen O by introducing O_2 and using the ultraviolet generating lamp. (c) means for introducing the radical oxygen O^* into a cleaning tank filled with a cleaning liquid and cleaning the semiconductor wafer with the cleaning liquid.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6833390A JPH03270132A (en) | 1990-03-20 | 1990-03-20 | Method and device for cleaning semiconductor wafer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6833390A JPH03270132A (en) | 1990-03-20 | 1990-03-20 | Method and device for cleaning semiconductor wafer |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH03270132A true JPH03270132A (en) | 1991-12-02 |
Family
ID=13370808
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6833390A Pending JPH03270132A (en) | 1990-03-20 | 1990-03-20 | Method and device for cleaning semiconductor wafer |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH03270132A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6116254A (en) * | 1995-03-30 | 2000-09-12 | Nec Corporation | Cleaning method and system of semiconductor substrate and production method of cleaning solution |
| US6703264B2 (en) * | 1995-09-08 | 2004-03-09 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing a semiconductor device |
| US6837631B2 (en) * | 2000-08-15 | 2005-01-04 | Tokyo Electron Limited | Substrate processing method and substrate processing apparatus |
-
1990
- 1990-03-20 JP JP6833390A patent/JPH03270132A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6116254A (en) * | 1995-03-30 | 2000-09-12 | Nec Corporation | Cleaning method and system of semiconductor substrate and production method of cleaning solution |
| US6703264B2 (en) * | 1995-09-08 | 2004-03-09 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing a semiconductor device |
| US7393723B2 (en) | 1995-09-08 | 2008-07-01 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing a semiconductor device |
| US6837631B2 (en) * | 2000-08-15 | 2005-01-04 | Tokyo Electron Limited | Substrate processing method and substrate processing apparatus |
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