JPH03267363A - Magnetic head and production thereof - Google Patents
Magnetic head and production thereofInfo
- Publication number
- JPH03267363A JPH03267363A JP6792590A JP6792590A JPH03267363A JP H03267363 A JPH03267363 A JP H03267363A JP 6792590 A JP6792590 A JP 6792590A JP 6792590 A JP6792590 A JP 6792590A JP H03267363 A JPH03267363 A JP H03267363A
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- magnetic head
- boron nitride
- ions
- group
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 10
- 239000010409 thin film Substances 0.000 claims abstract description 81
- 229910052582 BN Inorganic materials 0.000 claims abstract description 65
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 claims abstract description 65
- 239000000126 substance Substances 0.000 claims abstract description 20
- 150000002500 ions Chemical class 0.000 claims description 60
- IJGRMHOSHXDMSA-UHFFFAOYSA-N nitrogen Substances N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 29
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 26
- -1 nitrogen ion Chemical class 0.000 claims description 26
- 229910052757 nitrogen Inorganic materials 0.000 claims description 24
- 229910052796 boron Inorganic materials 0.000 claims description 20
- 239000011261 inert gas Substances 0.000 claims description 11
- 238000001771 vacuum deposition Methods 0.000 claims description 5
- 239000010408 film Substances 0.000 abstract description 28
- 239000011162 core material Substances 0.000 abstract description 19
- 230000001133 acceleration Effects 0.000 description 20
- 238000000034 method Methods 0.000 description 17
- 239000000203 mixture Substances 0.000 description 16
- 238000001704 evaporation Methods 0.000 description 15
- 230000008020 evaporation Effects 0.000 description 15
- 230000000052 comparative effect Effects 0.000 description 10
- 230000015572 biosynthetic process Effects 0.000 description 9
- 238000009792 diffusion process Methods 0.000 description 9
- 125000004429 atom Chemical group 0.000 description 8
- 239000002245 particle Substances 0.000 description 8
- 230000001678 irradiating effect Effects 0.000 description 7
- 238000010586 diagram Methods 0.000 description 6
- 229910001873 dinitrogen Inorganic materials 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 230000002411 adverse Effects 0.000 description 4
- 125000004433 nitrogen atom Chemical group N* 0.000 description 4
- 229910000889 permalloy Inorganic materials 0.000 description 4
- 238000007740 vapor deposition Methods 0.000 description 4
- 229910045601 alloy Inorganic materials 0.000 description 3
- 239000000956 alloy Substances 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 230000003247 decreasing effect Effects 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 230000006866 deterioration Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000010936 titanium Substances 0.000 description 3
- UQSXHKLRYXJYBZ-UHFFFAOYSA-N Iron oxide Chemical compound [Fe]=O UQSXHKLRYXJYBZ-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 239000000470 constituent Substances 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000010894 electron beam technology Methods 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 230000005389 magnetism Effects 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 229910000702 sendust Inorganic materials 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 229910000859 α-Fe Inorganic materials 0.000 description 2
- PERSSGOZVHZNBC-ZPUQHVIOSA-N (2e,4e)-6-(4-chlorophenyl)sulfanyl-n-hydroxyhexa-2,4-dienamide Chemical compound ONC(=O)\C=C\C=C\CSC1=CC=C(Cl)C=C1 PERSSGOZVHZNBC-ZPUQHVIOSA-N 0.000 description 1
- 229910001017 Alperm Inorganic materials 0.000 description 1
- 229910003271 Ni-Fe Inorganic materials 0.000 description 1
- 206010037660 Pyrexia Diseases 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 238000005299 abrasion Methods 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 229910052810 boron oxide Inorganic materials 0.000 description 1
- GPTXWRGISTZRIO-UHFFFAOYSA-N chlorquinaldol Chemical compound ClC1=CC(Cl)=C(O)C2=NC(C)=CC=C21 GPTXWRGISTZRIO-UHFFFAOYSA-N 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- JKWMSGQKBLHBQQ-UHFFFAOYSA-N diboron trioxide Chemical compound O=BOB=O JKWMSGQKBLHBQQ-UHFFFAOYSA-N 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/187—Structure or manufacture of the surface of the head in physical contact with, or immediately adjacent to the recording medium; Pole pieces; Gap features
- G11B5/255—Structure or manufacture of the surface of the head in physical contact with, or immediately adjacent to the recording medium; Pole pieces; Gap features comprising means for protection against wear
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physical Vapour Deposition (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
この発明は、オーディオテープレコーダ、ビデオテープ
レコーダ（ＶＴＲ）、デジタルオーディオテープレコー
ダ（ＤＡＴ）、 フロッピディスクハードディスクまた
は磁気カード等の磁気記録媒体および磁気記録再生機器
における記録用、再生用または消去用等の磁気へンドと
その製造方法に関するものである。[Detailed Description of the Invention] [Field of Industrial Application] The present invention relates to magnetic recording media such as audio tape recorders, video tape recorders (VTRs), digital audio tape recorders (DATs), floppy disk hard disks, or magnetic cards, and magnetic The present invention relates to a magnetic head for recording, reproducing, or erasing in a recording/reproducing device, and a method of manufacturing the same.
〔従来の技術］ 第４図は従来の磁気ヘッドの構造を示す概念図である。[Conventional technology] FIG. 4 is a conceptual diagram showing the structure of a conventional magnetic head.
第４図において、１は磁気ヘッドコア材、２は摺動面、
５はギャップ、６はコイルを示す。In Fig. 4, 1 is a magnetic head core material, 2 is a sliding surface,
5 indicates a gap, and 6 indicates a coil.
磁気ヘッドコア材１としては、従来よりパーマロイ、セ
ンダストおよびフェライト等が用いられている。As the magnetic head core material 1, permalloy, sendust, ferrite, etc. have conventionally been used.
磁気ヘッド２１は、摺動面２に磁気テープ等の磁気記録
媒体（図示せず）を摺動させ、記録、再生および消去を
行うものであるが、このように磁気記録媒体と摺動させ
て使用するため、摺動面２の摩耗を避けることができず
、この摩耗が磁気へノド２１の寿命を左右している。The magnetic head 21 slides a magnetic recording medium (not shown) such as a magnetic tape on the sliding surface 2 to perform recording, reproduction, and erasing. Due to its use, the sliding surface 2 is unavoidably worn, and this wear determines the lifespan of the magnetic nod 21.
そこで例えば磁気ヘッドコア材ｌとしてパーマロイを用
いたものでは、磁気ヘッドコア材１の磁気記録媒体との
摺動面２に、ボロン賦与材を塗布し、アニーリング処理
を行うことによりボロン拡散層（図示せず）を形成する
ことによって、この摺動面の耐摩耗性を向上させる方法
が、特公昭５６−１６８２号に開示されている。Therefore, for example, when permalloy is used as the magnetic head core material 1, a boron-imparting material is applied to the sliding surface 2 of the magnetic head core material 1 that contacts the magnetic recording medium, and an annealing treatment is performed to form a boron diffusion layer (not shown). ) is disclosed in Japanese Patent Publication No. 1682/1982, which improves the wear resistance of this sliding surface.
しかし、このような方法によって、磁気特性の優れた磁
気ヘッドを得ようとすると、磁気記録媒体との摺動面２
にボロン拡散層を形成するだめのアニーリング処理時間
、温度および冷却速度等の管理を厳密に行う必要があり
、このような工程の管理は、複雑であり、結果としてコ
スト高になるという問題があった。However, when trying to obtain a magnetic head with excellent magnetic properties by such a method, the sliding surface 2 between the magnetic recording medium and the
In order to form a boron diffusion layer, it is necessary to strictly control the annealing treatment time, temperature, cooling rate, etc., and the management of such processes is complicated, resulting in high costs. Ta.
またこのように磁気ヘッドコア材１の磁気記録媒体との
摺動面２にボロン拡散層を硬化層とじて形成する場合、
磁気へ、ド２１の摺動面２は、磁気ヘッド２１の組立の
最終工程において、研磨されるため、硬化層となるボロ
ン拡散層は、研磨しろ以上の厚みが予め必要となる。し
かし、このような厚みを有するボロン拡散層を予め形成
したとしても、最終的に得られるボロン拡散層の厚みは
、非常に再現性の悪いものとなる。In addition, when forming a boron diffusion layer together with a hardened layer on the sliding surface 2 of the magnetic head core material 1 with the magnetic recording medium in this way,
Since the sliding surface 2 of the magnetic head 21 is polished in the final step of assembling the magnetic head 21, the boron diffusion layer serving as the hardened layer must be thicker than the polishing margin. However, even if a boron diffusion layer having such a thickness is formed in advance, the thickness of the boron diffusion layer finally obtained will have very poor reproducibility.
一方ボロン拡散層は非磁性層であるため、その厚みは、
磁気ヘッド２１の出力特性に非常に影響を与える。した
がって上述のように、ボロン拡散層の厚みの再現性の悪
さ、すなわちボロン拡散層の厚みにバラツキが生しると
、磁気ヘッド２１の磁気特性にもバラツキが生しるとい
う問題がある。On the other hand, since the boron diffusion layer is a nonmagnetic layer, its thickness is
This greatly affects the output characteristics of the magnetic head 21. Therefore, as described above, if there is poor reproducibility of the thickness of the boron diffusion layer, that is, if there is variation in the thickness of the boron diffusion layer, there is a problem that the magnetic properties of the magnetic head 21 will also vary.
このような問題を解決する方法として、例えば特公昭５
５−１２６５２号に開示されている。As a way to solve such problems, for example,
No. 5-12652.
この方法は、少なくとも一種以上の金属硬化原子をイオ
ン化し、１０ｋｅＶから１ｏＯｋｅＶの電界で加速して
、このイオンを磁気へノドコア材１の磁気記録媒体との
摺動面２にイオン注入することにより、摺動面２に硬化
層（図示せず）を形成することによって、耐摩耗性を向
上させる方法である。This method involves ionizing at least one type of metal hardening atom, accelerating it with an electric field of 10 keV to 1 oO keV, and injecting the ion into the sliding surface 2 of the magnetic core material 1 with the magnetic recording medium. This method improves wear resistance by forming a hardened layer (not shown) on the sliding surface 2.
このような方法による磁気記録媒体との摺動面２の硬化
は、磁気ヘッド２１の組立の最終工程に組み入れること
ができ、また形成プロセスも容易であり、さらにイオン
注入の際のイオンの加速エネルギーを制御することによ
り、硬化層の厚みを制御することができる。Hardening of the sliding surface 2 with the magnetic recording medium by such a method can be incorporated into the final step of assembling the magnetic head 21, the formation process is easy, and the acceleration energy of ions during ion implantation can be By controlling , the thickness of the cured layer can be controlled.
〔発明が解決しようとする課題］
しかしながら、上述の方法では、磁気へノド２１の組立
後に、高い加速エネルギーを有するイオンにより、イオ
ン注入を行うため、このイオン注入にともなって発生す
る熱が、磁気へノド２１に用いられている樹脂および接
着剤等に劣化をもたらしたり、磁気ヘッド２１を構成す
る各部の寸法精度に悪影響を及ぼすという問題があった
。また注入されたイオンが磁気ヘッドコア材ｌの結晶格
子間に侵入することにより、歪みを生したり、結晶格子
点の原子と置換したりすることによって、磁気ヘッドコ
ア材１の磁気特性が変化する可能性があるという問題が
あった。[Problems to be Solved by the Invention] However, in the above method, ions are implanted with ions having high acceleration energy after the magnetic nodal 21 is assembled, so the heat generated due to this ion implantation is There have been problems in that the resin, adhesive, etc. used in the henode 21 are deteriorated, and the dimensional accuracy of each part constituting the magnetic head 21 is adversely affected. In addition, the implanted ions may enter between the crystal lattices of the magnetic head core material 1, causing distortion or replacing atoms at crystal lattice points, which may change the magnetic properties of the magnetic head core material 1. There was the issue of gender.
このように現在、磁気ヘッド２１の磁気記録媒体との摺
動面２の耐摩耗性を実用上充分なものとし、かつ工業的
に有利な方法は、見出されていないのが実情である。As described above, the current situation is that no method has been found that is industrially advantageous and provides practically sufficient wear resistance of the sliding surface 2 of the magnetic head 21 against the magnetic recording medium.
この発明の目的は、上記問題点に鑑み、磁気記録媒体と
の摺動面の耐摩耗性を著しく向上させた磁気ヘッドとそ
の製造方法を提供するものである。SUMMARY OF THE INVENTION In view of the above-mentioned problems, an object of the present invention is to provide a magnetic head in which the wear resistance of the sliding surface with a magnetic recording medium is significantly improved, and a method for manufacturing the same.
請求項（１）記載の磁気ヘッドは、磁気記録媒体との摺
動面に形成した第ＩＩＩｂ族、第ＩＶａ族および第ＩＶ
ｂ族元素のうちの少なくとも一種以上を含む薄膜と、
この薄膜上に形成した窒化ホウ素薄膜とを備えたもので
ある。The magnetic head according to claim (1) is provided with a group IIIb, a group IVa, and a group IV magnetic head formed on a sliding surface with a magnetic recording medium.
The device includes a thin film containing at least one of group B elements, and a boron nitride thin film formed on the thin film.
第１図はこの発明の磁気ヘッドの一例を示す概念図であ
る。FIG. 1 is a conceptual diagram showing an example of the magnetic head of the present invention.
第１図に示すように、磁気へノドコア材１の磁気記録媒
体との摺動面２上に、第ＩＩＩｂ族、第ＩＶａ族および
第■ｂ族元素のうちの少なくとも一種以上を含む薄膜（
以下「中間Ｔｆｉ３」という。）を形成し、そしてさら
にこの中間層３上には、高硬度。As shown in FIG. 1, a thin film (
Hereinafter, it will be referred to as "intermediate Tfi3." ), and furthermore, on this intermediate layer 3, a high hardness layer is formed.
熱的および化学的安定性に優れたｃ−ＢＮまたはｗ−Ｂ
Ｎを含有する窒化ホウ素薄膜４を形成した。c-BN or w-B with excellent thermal and chemical stability
A boron nitride thin film 4 containing N was formed.
なお第１図において、５はギャップ、６はコイルを示す
。In FIG. 1, 5 indicates a gap and 6 indicates a coil.
また磁気へラド７の形状は、任意である。Further, the shape of the magnetic helad 7 is arbitrary.
また磁気へラドコア材１には、パーマロイ、アルパーム
、フェライト系またはセンダスト合金系のものが用いら
れ、特に材質は限定されない。The magnetic herad core material 1 may be made of permalloy, alperm, ferrite, or sendust alloy, and the material is not particularly limited.
請求項（２）記載の磁気ヘッドの製造方法は、磁気記録
媒体との摺動面に、第ＩＩＩｂ族、第］Ｖａ族および第
ＩＶｂ族元素のうちの少なくとも一種以上を含む物質の
真空蒸着と同時もしくは交互または蒸着後に、不活性ガ
スイオンおよび窒素イオンのうちの少なくとも一方を含
むイオンを照射して、前記第ＩＩＩｂ族、第ＩＶａ族お
よび第ＩＶｂ族元素のうちの少なくとも一種以上を含ん
だ薄膜を形成し、この薄膜上に、ホウ素を含む物質の真
空蒸着と同時または交互に、少なくとも窒素イオンを含
むイオンを照射して窒化ホウ素薄膜を形成することを特
徴とする。The method for manufacturing a magnetic head according to claim (2) includes vacuum deposition of a substance containing at least one of group IIIb, group Va, and group IVb elements on a sliding surface with a magnetic recording medium. A thin film containing at least one of the group IIIb, group IVa, and group IVb elements by irradiating with ions containing at least one of inert gas ions and nitrogen ions simultaneously or alternately or after vapor deposition. The method is characterized in that a thin film of boron nitride is formed by irradiating the thin film with ions containing at least nitrogen ions simultaneously or alternately with the vacuum deposition of a substance containing boron.
この発明の磁気ヘッドの製造方法の一例を第１図および
第２図に基づいて説明する。An example of the method for manufacturing the magnetic head of the present invention will be explained based on FIGS. 1 and 2.
第２図はこの発明の磁気ヘッドの製造方法に用いられる
薄膜形成装置の一例を示す概念図である。FIG. 2 is a conceptual diagram showing an example of a thin film forming apparatus used in the method of manufacturing a magnetic head of the present invention.
第２図に示すように、膜を形成すべき磁気ヘッド７をホ
ルダ８に保持する。磁気ヘッド７の磁気記録媒体との摺
動面２に対向した位置には、蒸発源９．蒸発源１０およ
びイオン源１１を配置する。As shown in FIG. 2, a magnetic head 7 on which a film is to be formed is held in a holder 8. At a position facing the sliding surface 2 of the magnetic head 7 against the magnetic recording medium, there is an evaporation source 9. An evaporation source 10 and an ion source 11 are arranged.
また磁気ヘッド７の両側付近には、膜厚計１２およびイ
オン電流測定器１３を配置する。Further, near both sides of the magnetic head 7, a film thickness meter 12 and an ion current measuring device 13 are arranged.
なお磁気ヘッド７、ホルダ８．蒸発源９．蒸発源１０．
イオン源１１．膜厚計１２およびイオン電流測定器１３
は図示しない真空容器内に収容する。Note that the magnetic head 7, holder 8. Evaporation source9. Evaporation source 10.
Ion source 11. Film thickness meter 12 and ion current measuring device 13
is housed in a vacuum container (not shown).
蒸発源９，１０は、蒸発物質１４．１５を例えば電子ビ
ーム、レーザ線または高周波等によって、衆発させるも
のであり、特に限定されない。The evaporation sources 9 and 10 emit the evaporation substances 14 and 15 using, for example, an electron beam, a laser beam, or a high frequency wave, and are not particularly limited.
またイオンｔＡ１１は、例えばカウフマン型またはプラ
ズマ閉じ込めにカプス磁場を用いたバケット型等であり
、特に限定されない。Further, the ion tA11 is, for example, a Kaufman type or a bucket type using a Caps magnetic field for plasma confinement, and is not particularly limited.
また膜厚計１２は、磁気ヘッド７の磁気記録媒体との摺
動面２に蒸着する蒸発物質１４．１５の膜厚および粒子
数を計測するものであり、例えば水晶振動子を使用した
振動型膜厚計等を用いる。The film thickness gauge 12 measures the film thickness and number of particles of the evaporated substance 14 and 15 deposited on the sliding surface 2 of the magnetic head 7 with the magnetic recording medium. Use a film thickness meter, etc.
またイオン電流測定器１３は、磁気ヘッド７の磁気記録
媒体との摺動面２に照射するイオンの個数を計測するも
のであり、例えばファラデーカップのような２次電子抑
制電極をもつカップ形構造のものである。The ion current measuring device 13 measures the number of ions irradiated onto the sliding surface 2 of the magnetic head 7 with respect to the magnetic recording medium. belongs to.
また蒸発源９より蒸発させる蒸発物質１４は、第ＩＩＩ
ｂ族、第ＩＶａ族および第ｒＶｂ族元素のうちの少なく
とも一種以上を含んだ物質であり、例えば各々の単体、
酸化物または窒化物、またはこれらの混合物１合金等で
ある。また第ＩＩＩｂ族元素としては、例えばＢ、Ａｆ
等であり、第ＩＶａ族元素としては、例えばＴｉ、Ｚｒ
等であり、第ＩＶｂ族元素としては、例えばＳｉ等であ
る。Further, the evaporation substance 14 evaporated from the evaporation source 9 is
A substance containing at least one of group b, group IVa, and group rVb elements, for example, each element,
These include oxides, nitrides, mixtures thereof, alloys, etc. In addition, examples of group IIIb elements include B, Af
etc., and examples of Group IVa elements include Ti, Zr, etc.
etc., and the Group IVb element is, for example, Si.
また蒸発源１０より蒸発させる蒸発物質１５は、ホウ素
を含む物質であり、例えば、ホウ素単体ホウ素酸化物ま
たはホウ素窒化物等である。The evaporation substance 15 evaporated from the evaporation source 10 is a substance containing boron, such as boron oxide or boron nitride.
またイオン１６は、例えば窒素イオン、窒素イオンと不
活性ガスイオンまたは窒素イオンと不活性ガスイオンと
水素イオンとからなるイオン種である。The ions 16 are, for example, nitrogen ions, nitrogen ions and inert gas ions, or ion species consisting of nitrogen ions, inert gas ions, and hydrogen ions.
このような薄膜形成装置を用いて、第１図に示すように
、磁気ヘッド７の磁気記録媒体との摺動面２に第ＩＩＩ
ｂ族、第ＩＶａ族および第ＩＶｂ族元素のうちの少なく
とも一種以上を含んだ薄膜（中間層３）を形成し、この
中間層３上に窒化ホウ素薄膜４を形成する。Using such a thin film forming apparatus, as shown in FIG.
A thin film (intermediate layer 3) containing at least one of group b, IVa, and IVb elements is formed, and a boron nitride thin film 4 is formed on this intermediate layer 3.
また摺動面２と中間層３との界面には、摺動面２と中間
層３との構成原子からなる混合Ｎ（図示せず）、中間層
３と窒化ホウ素薄膜４との界面には、中間層３と窒化ホ
ウ素膜４との構成原子からなる混合層（図示せず）が形
成される。In addition, at the interface between the sliding surface 2 and the intermediate layer 3, there is mixed N (not shown) consisting of constituent atoms of the sliding surface 2 and the intermediate layer 3, and at the interface between the intermediate layer 3 and the boron nitride thin film 4, , a mixed layer (not shown) consisting of constituent atoms of the intermediate layer 3 and the boron nitride film 4 is formed.
以下この中間層３および窒化ホウ素薄膜４の形成方法を
説明する。The method for forming the intermediate layer 3 and the boron nitride thin film 4 will be explained below.
第２図に示す薄膜形成装置を用い、磁気ヘソド７の磁気
記録媒体との摺動面２に、蒸発′ｔｉ、９による第ＩＩ
Ｉｂ族、第ＩＶａ族および第ＩＶｂ族元素のうちの少な
くとも一種以上を含む蒸発物質１４の蒸着と同時もしく
は交互または蒸着後に、イオンｔＡ１１により、不活性
ガスイオンおよび窒素イオンのうちの少なくとも一方を
含むイオンを照射して、中間層３を形成する。Using the thin film forming apparatus shown in FIG.
Containing at least one of an inert gas ion and a nitrogen ion by the ion tA11 simultaneously or alternately with or after the vapor deposition of the evaporation material 14 containing at least one of the group Ib, group IVa, and group IVb elements. The intermediate layer 3 is formed by ion irradiation.
この際、摺動面２と中間層３との界面には、照射するイ
オンと蒸着原子との衝突および反跳により、イオンと蒸
着原子とが内部に侵入し、その結果、新たな混合層（図
示せず）が形成される。At this time, ions and vapor deposited atoms enter the interface between the sliding surface 2 and the intermediate layer 3 due to the collision and recoil between the irradiated ions and the vapor deposited atoms, and as a result, a new mixed layer ( (not shown) is formed.
但し、蒸発物質１４として、第ＩＩＩｂ族元素のホウ素
単体を用いた場合は、イオン源１１により、不活性ガス
イオンのみを照射する。However, when boron alone, which is a group IIIb element, is used as the evaporative substance 14, only inert gas ions are irradiated by the ion source 11.
この中間層３の形成により、磁気へノド１を構成する原
子と、後に中間層３の表面に形成する窒化ホウ素薄膜４
との熱膨張係数の違いおよび格子定数の違いによって生
しる窒化ホウ素薄膜４の密着性の悪化を防ぐことができ
、かつ窒化ホウ素蒲Ｗｉ：４の形成時におけるｃ−ＢＮ
、ｗ−ＢＮの成長の妨げをなくすことができる。そして
さらに、中間Ｎ３の形成時に、窒素イオンおよび不活性
ガスイオンのうちの少なくとも一種以上を含むイオンを
照射することにより、磁気ヘッド７の磁気記録媒体との
摺動面２と中間層３との界面に新たな混合層を形成する
ことにより、摺動面２と中間層３との密着性を向上させ
るこ゛とができる。By forming this intermediate layer 3, the atoms constituting the magnetic node 1 and the boron nitride thin film 4 to be formed later on the surface of the intermediate layer 3 are removed.
It is possible to prevent deterioration of the adhesion of the boron nitride thin film 4 caused by the difference in thermal expansion coefficient and lattice constant between the c-BN film and the boron nitride film Wi: 4.
, it is possible to eliminate the hindrance to the growth of w-BN. Further, when forming the intermediate N3, by irradiating with ions containing at least one of nitrogen ions and inert gas ions, the sliding surface 2 of the magnetic head 7 with the magnetic recording medium and the intermediate layer 3 are bonded. By forming a new mixed layer at the interface, the adhesion between the sliding surface 2 and the intermediate layer 3 can be improved.
なお中間層３の厚みは、１ｏ人〜５０００人の範囲が好
ましい。この範囲を逸脱して１ｏ人より薄くなると、前
述中間層３の効果が明確に出現せず、５０００人より厚
くなると、磁気ヘッド７が高温下にさらされた場合、中
間層３と、後に中間層３上に形成する窒化ホウ素薄膜４
との熱伝導率の違いにより、磁気ヘッド７を覆う膜内に
熱勾配が生じ、膜が剥離しやすくなる。Note that the thickness of the intermediate layer 3 is preferably in the range of 1 to 5,000 people. If it deviates from this range and becomes thinner than 10, the effect of the intermediate layer 3 will not clearly appear, and if it becomes thicker than 5,000, when the magnetic head 7 is exposed to high temperature, the intermediate layer 3 and later the intermediate Boron nitride thin film 4 formed on layer 3
Due to the difference in thermal conductivity between the magnetic head 7 and the magnetic head 7, a thermal gradient is generated within the film covering the magnetic head 7, making it easy for the film to peel off.
またイオン源１１により、磁気ヘッド７の磁気記録媒体
との摺動面２に照射する不活性ガスイオンおよび窒素イ
オンのうちの一方を含むイオンの加速エネルギーは、１
ｋｅＶ以上〜４０ｋｅＶ以下の範囲が好ましい。この範
囲を逸脱して、１ｋｅＶより小さくすると、磁気ヘッド
７の磁気記録媒体との摺動面２と中間層３との界面での
混合層の形成が不充分となり、４０ｋｅＶより大きくす
ると、中間層３に生じる欠陥の数が多くなる。Further, the acceleration energy of ions including one of inert gas ions and nitrogen ions irradiated onto the sliding surface 2 of the magnetic head 7 with the magnetic recording medium by the ion source 11 is 1
The range is preferably from keV to 40 keV. If it deviates from this range and becomes smaller than 1 keV, the formation of a mixed layer at the interface between the sliding surface 2 of the magnetic head 7 and the magnetic recording medium and the intermediate layer 3 becomes insufficient, and if it exceeds 40 keV, the intermediate layer 3, the number of defects occurring increases.
次にこの中間層３上に、蒸発源１０によるホウ素を含む
蒸発物質１５の蒸着と同時または交互に、イオン源１１
により、少なくとも窒素イオンを含むイオンを照射して
、窒化ホウ素薄膜４を形成する。Next, an ion source 11 is deposited on this intermediate layer 3 simultaneously or alternately with the deposition of the evaporation material 15 containing boron by the evaporation source 10.
The boron nitride thin film 4 is formed by irradiating with ions containing at least nitrogen ions.
この際、形成する窒化ホウ素ｆｌｉｔ膜４中に含まれる
ホウ素原子と窒素原子との粒子数の割合（以下ｒＢ／Ｎ
＆ＩＩ成比」という。）は１以上〜６０以下の範囲とす
ることが好ましい。At this time, the ratio of the number of particles of boron atoms and nitrogen atoms contained in the boron nitride flit film 4 to be formed (rB/N
& II Seihi.” ) is preferably in the range of 1 or more and 60 or less.
このＢ／Ｎ組成比は、窒化ホウ素薄膜４全体で一定にし
ても、または窒化ホウ素薄膜４中で、磁気ヘッド７の磁
気記録媒体との摺動面２から表面方向に、Ｂ／Ｎ組成比
を減少させても良い（すなわち窒化ホウ素薄膜４中で、
ホウ素の原子密度を磁気へノド７の磁気記録媒体との摺
動面２から表面方向に、段階的または連続的に減少させ
る）。Even if this B/N composition ratio is kept constant throughout the boron nitride thin film 4, or in the boron nitride thin film 4, the B/N composition ratio is changed from the sliding surface 2 of the magnetic head 7 with the magnetic recording medium in the surface direction. (i.e., in the boron nitride thin film 4,
(The atomic density of boron is decreased stepwise or continuously from the sliding surface 2 of the magnetic nozzle 7 with the magnetic recording medium toward the surface.)
窒化ホウ素薄膜４全体でＢ／Ｎ組成比を一定とする場合
、窒化ホウ素薄膜４の形成時に照射するイオンの加速エ
ネルギーが２ｋｅＶ未満では、Ｂ／Ｎ組成比を１以上〜
６以下の範囲で一定とし、同様に加速エネルギ−２ｋｅ
Ｖ以上〜５ｋｅＶ未満では、Ｂ／Ｎ組成比を１以上〜１
０以下の範囲で一定とし、加速エネルギ’−５ｋｅＶ以
上では、Ｂ／Ｎ＆ｌＩ成比を１以上〜２０以下の範囲で
一定とすることが好ましい。When the B/N composition ratio is constant throughout the boron nitride thin film 4, if the acceleration energy of ions irradiated during formation of the boron nitride thin film 4 is less than 2 keV, the B/N composition ratio is set to 1 or more.
6 or less, and similarly the acceleration energy -2ke
V or more and less than 5 keV, the B/N composition ratio is 1 or more and 1 or more.
It is preferable to keep the B/N&lI ratio constant in a range of 0 or less, and to keep the B/N&lI ratio constant in a range of 1 or more and 20 or less when the acceleration energy is -5 keV or more.
この範囲を逸脱すると、窒化ホウ素薄膜４の表面でのｃ
−ＢＮまたはｗ−ＢＮの含有量が少なくなり、ｃ−ＢＮ
およびｗ−ＢＮの高硬度、化学的安定性等の優れた特性
に悪影響を及ぼす恐れがある。Outside this range, c on the surface of the boron nitride thin film 4
-The content of BN or w-BN decreases, and c-BN
Also, there is a possibility that the excellent properties such as high hardness and chemical stability of w-BN will be adversely affected.
また窒化ホウ素薄膜４中のＢ／Ｎ！ｌ！成比を段階的ま
たは連続的に減少させる場合は、窒化ホウ素薄膜４の表
面では、Ｂ／Ｎ＆ＩＩＩ成比を１以上〜１０以下の範囲
とし、中間層３と窒化ホウ素薄膜４との界面では、Ｂ／
Ｎ１１ｌ成比を４以上〜６０以下の範囲とすることが好
ましい。Also, the B/N in the boron nitride thin film 4! l! When decreasing the composition ratio stepwise or continuously, on the surface of the boron nitride thin film 4, the B/N&III composition ratio should be in the range of 1 or more and 10 or less, and at the interface between the intermediate layer 3 and the boron nitride thin film 4, B/
It is preferable that the N11l ratio is in the range of 4 or more and 60 or less.
窒化ホウ素清膜４の表面でのＢ／ＮＭ成比が１以上〜１
０以下の範囲を逸脱すると、膜表面でのｃ−ＢＮまたは
ｗ−ＢＮの含有量が少なくなり、このｃ−ＢＮおよびｗ
−ＢＮが有する高硬度、化学的安定性等の優れた特性に
悪影響を及ぼし、また中間層３と窒化ホウ素薄膜４との
界面でのＢ／Ｎ組成比が４以上〜６０以下の範囲を逸脱
すると、中間層３による窒化ホウ素薄膜４と摺動面２と
の熱膨張係数および格子定数の違いを緩和する作用が不
充分となる。The B/NM ratio on the surface of the boron nitride clear film 4 is 1 or more to 1
If it deviates from the range of 0 or less, the content of c-BN or w-BN on the film surface decreases, and this c-BN and w-BN content decreases.
- It adversely affects the excellent properties of BN such as high hardness and chemical stability, and the B/N composition ratio at the interface between the intermediate layer 3 and the boron nitride thin film 4 is outside the range of 4 or more and 60 or less. Then, the effect of the intermediate layer 3 to alleviate the difference in thermal expansion coefficient and lattice constant between the boron nitride thin film 4 and the sliding surface 2 becomes insufficient.
またこのように窒化ホウ素薄膜４中で、磁気ヘッド７の
磁気記録媒体との摺動面２から表面方向にＢ ／Ｎ組成
比を段階的または連続的に減少させる場合の窒化ホウ素
薄膜４の形成方法は、中間層３の表面に到達するホウ素
と窒素イオンとの粒子数を制御することにより、中間層
３と窒化ホウ素薄膜４との界面でのＢ／Ｎ＆ｌｌ成比を
４以上〜６０以下の範囲とし、その後堆積する窒化ホウ
素薄膜４のＢ／Ｎ組成比を減少させるように、膜に到達
するホウ素と窒素イオンとの粒子数を制御し、最終的に
窒化ホウ素薄膜４０表面付近でのＢ／Ｎ組成比を１以上
〜１０以下の範囲となるようにする。Furthermore, the formation of the boron nitride thin film 4 when the B/N composition ratio is decreased stepwise or continuously in the boron nitride thin film 4 from the sliding surface 2 of the magnetic head 7 with the magnetic recording medium toward the surface. The method is to control the number of boron and nitrogen ion particles that reach the surface of the intermediate layer 3, thereby increasing the B/N&ll ratio at the interface between the intermediate layer 3 and the boron nitride thin film 4 from 4 to 60. The number of boron and nitrogen ion particles reaching the film is controlled so as to reduce the B/N composition ratio of the boron nitride thin film 4 that is deposited, and finally the B/N ratio near the surface of the boron nitride thin film 40 is /N composition ratio is set to be in the range of 1 or more and 10 or less.
またこの際に照射するイオンの加速エネルギーは、一定
であっても、随時変化させても良く、例えば中間層３の
表面付近では、窒化ホウ素薄膜４と中間層との密着性を
向上させるため、２ｋｅＶ〜４０ｋｅＶの加速エネルギ
ーの範囲でイオンを照射し、一定の膜厚の有する窒化ホ
ウ素薄膜４を形成した後、膜の表面付近では、内部に欠
陥等の少ない窒化ホウ素薄膜４を形成するため、照射す
るイオンの加速エネルギーを２ｋｅＶ以下にさげても良
い。Further, the acceleration energy of the ions irradiated at this time may be constant or may be changed at any time. For example, near the surface of the intermediate layer 3, in order to improve the adhesion between the boron nitride thin film 4 and the intermediate layer, After forming a boron nitride thin film 4 having a constant thickness by irradiating ions with an acceleration energy of 2 keV to 40 keV, near the surface of the film, in order to form a boron nitride thin film 4 with few internal defects, The acceleration energy of the irradiated ions may be lowered to 2 keV or less.
また窒化ホウ素薄膜４の形成の際に照射する少なくとも
窒素イオンを含むイオンの加速エネルギーは４０ｋｅＶ
以下とすることが好ましい。Further, the acceleration energy of ions containing at least nitrogen ions irradiated when forming the boron nitride thin film 4 is 40 keV.
The following is preferable.
この範囲を逸脱して、照射するイオンの加速エネルギー
を４０ｋｅＶより大きくすると、形成した窒化ホウ素薄
膜４中の欠陥の数が多くなり、膜の特性劣化を及ぼす。If the acceleration energy of the irradiated ions is made larger than 40 keV outside this range, the number of defects in the formed boron nitride thin film 4 will increase, resulting in deterioration of the properties of the film.
またイオンの加速エネルギーの下限は、特に限定されな
いが、実際のイオン源１１の構造を考慮した場合、１０
０ｅＶ位になると考えられる。Further, the lower limit of the ion acceleration energy is not particularly limited, but when considering the actual structure of the ion source 11, the lower limit is 10
It is thought that it will be around 0 eV.
このように、磁気ヘッド７の磁気記録媒体との摺動面２
に中間層３を形成し、この中間Ｎ３上に高硬質、熱的お
よび化学的安定性等の優れた特性を有するｃ−ＢＮまた
はｗ−ＢＮを含有する窒化ホウ素１膜４を形成すること
により、磁気へ、ドアの磁気記録媒体との摺動面２の耐
摩耗性を著しく向上させることができる。In this way, the sliding surface 2 of the magnetic head 7 and the magnetic recording medium
By forming an intermediate layer 3 on the intermediate layer 3, and forming a boron nitride 1 film 4 containing c-BN or w-BN, which has excellent properties such as high hardness, thermal and chemical stability, etc. , magnetically, the wear resistance of the sliding surface 2 of the door with the magnetic recording medium can be significantly improved.
なおこの窒化ホウ素薄膜４の形成の際、イオン源１１に
より照射するイオン種は、照射量および加速エネルギー
が前述範囲内であれば、窒素イオンのみ、窒素イオンと
不活性ガスイオンまたはそれらに水素イオンを加えたも
のでも良い。When forming this boron nitride thin film 4, the ion species irradiated by the ion source 11 may be only nitrogen ions, nitrogen ions and inert gas ions, or hydrogen ions in addition to nitrogen ions and inert gas ions, as long as the irradiation amount and acceleration energy are within the above-mentioned ranges. It is also possible to add .
また中間層３および窒化ホウ素薄膜４の被覆は、磁気へ
ノドコア材１の磁気記録媒体との摺動面２に限らず、磁
気ヘッドコア材１を収納するシールドケース（図示せず
）等において、耐摩耗性の要求される磁気記録媒体との
摺動面に施しても良い。Furthermore, the intermediate layer 3 and the boron nitride thin film 4 are coated not only on the sliding surface 2 of the magnetic head core material 1 with the magnetic recording medium, but also in a shield case (not shown) that houses the magnetic head core material 1, etc. It may also be applied to a sliding surface with a magnetic recording medium that requires abrasion resistance.
例えば、所定の形状に加工した磁気へ、ドコア材を所定
の形状のシールドケースに収納し、樹脂等を用いて固定
し、この磁気へノドコア材等からなる磁気ヘッドの磁気
記録媒体との摺動面を研磨しした後、磁気ヘッドおよび
シールドケースの磁気記録媒体との摺動面に膜を被覆す
ることもできる。For example, a magnetic core material processed into a predetermined shape is housed in a shield case with a predetermined shape, fixed using resin, etc., and a magnetic head made of the magnetic core material etc. is slid onto the magnetic recording medium. After polishing the surfaces, it is also possible to coat the surfaces of the magnetic head and shield case that slide against the magnetic recording medium with a film.
この方法によれば、窒化ホウ素薄膜の形成工程を磁気へ
ノド組立の最終工程に組み入れることができ、工業的に
有益である。According to this method, the step of forming the boron nitride thin film can be incorporated into the final step of assembling the magnetic helix, which is industrially advantageous.
［作用〕
この発明の構成によれば、磁気ヘッドの磁気記録媒体と
の摺動面と窒化ホウ素薄膜との間に形成する第ＩＩＩｂ
族、第ｒＶａ族および第ＩＶｂ族のうちの少なくとも一
種以上を含んだ薄膜によって、磁気ヘッドの摺動面と窒
化ホウ素薄膜との熱膨張率の違いおよび格子定数の違い
により生しる窒化ホウ素薄膜の密着性の悪化および窒化
ホウ素薄膜の形成時におけるｃ−ＢＮ、ｗ−ＢＮの成長
の妨げ等をなくすことができる。[Function] According to the configuration of the present invention, IIIb formed between the sliding surface of the magnetic head with the magnetic recording medium and the boron nitride thin film.
A boron nitride thin film is produced due to the difference in coefficient of thermal expansion and difference in lattice constant between the sliding surface of a magnetic head and the boron nitride thin film due to the thin film containing at least one member of the group rVa, group rVa, and group IVb. It is possible to eliminate deterioration of the adhesion of the boron nitride thin film and hindrance to the growth of c-BN and w-BN during formation of the boron nitride thin film.
〔実施例］
尖旌拠土
第２図に示す薄膜形成製置を用いて、真空容器内の真空
度をｌＸｌ０−’［Ｔｏｒｒ）以下に維持し、第３図に
示す磁気へノド２０の磁気記録媒体との摺動面１８に電
子ビームの蒸発源９により、蒸発物質１４として、第Ｉ
Ｖｂ族元素の純度９９．９９９％のケイ素原子（Ｓｌ）
の蒸着と同時に、イオン源１１に純度９９．９９９％の
窒素ガスを導入することにより、窒素イオンを加速エネ
ルギー２ ｋｅＶで照射することによって、中間層（図
示せず）を形成した。[Example] Using the thin film forming equipment shown in Figure 2, the degree of vacuum in the vacuum container was maintained at lXl0-' [Torr] or less, and the magnetism of the magnetic node 20 shown in Figure 3 was maintained. An evaporation source 9 of an electron beam causes the sliding surface 18 with the recording medium to be evaporated as evaporation material 14.
Silicon atom (Sl) with purity of 99.999% of Vb group element
Simultaneously with the vapor deposition, an intermediate layer (not shown) was formed by introducing nitrogen gas with a purity of 99.999% into the ion source 11 and irradiating nitrogen ions with an acceleration energy of 2 keV.
また中間層中のＳｉ原子と窒素原子との粒子数の割合（
Ｓｉ／Ｎ＆１１成比）は３となるように、到達するＳｉ
と窒素イオンとの粒子数を制御した。Also, the ratio of the number of particles between Si atoms and nitrogen atoms in the intermediate layer (
The arriving Si
and nitrogen ions and the number of particles was controlled.
またこの中間層の厚みは、２００人とした。The thickness of this middle class was set at 200 people.
次にこの中間層上に、茶発Ｒ１０により、純度９９．７
％のホウ素原子（Ｂ）の蒸着と同時に、イオン源１１に
純度９９．９９９％の窒素ガスを導入することにより、
窒素イオンを加速エネルギー２ｋｅＶで照射し、窒化ホ
ウ素薄膜を形成した。また窒化ホウ素薄膜中のホウ素原
子と窒素原子との粒子数の割合（Ｂ／Ｎｕ成比）は、膜
全体で一定の３とした。Next, on this middle layer, a purity of 99.7 is applied using Chaha R10.
By introducing nitrogen gas with a purity of 99.999% into the ion source 11 simultaneously with the vapor deposition of % boron atoms (B),
Nitrogen ions were irradiated with an acceleration energy of 2 keV to form a boron nitride thin film. Further, the ratio of the number of particles of boron atoms to nitrogen atoms (B/Nu ratio) in the boron nitride thin film was set to be constant 3 throughout the film.
また窒化ホウ素薄膜の膜厚は１０００人とした。The thickness of the boron nitride thin film was 1000.
なおこの実施例に用いる磁気ヘッドとして、第３図に示
すオーディオ用磁気ヘッドを用いた。Note that the audio magnetic head shown in FIG. 3 was used as the magnetic head used in this example.
第３図において、１７はコア、５はギャップ１８は磁気
記録媒体との摺動面および１９はケースを示す。またコ
ア１７およびケース１９の材質はともに、パーマロイ（
Ｎｉ−Ｆｅ合金）である。In FIG. 3, 17 is a core, 5 is a gap 18 is a sliding surface with a magnetic recording medium, and 19 is a case. In addition, both the core 17 and the case 19 are made of permalloy (
Ni-Fe alloy).
そして、さらに実施例１における中間層の形成時の蒸発
物質１４．照射イオン種、照射イオンの加速エネルギー
（１ｋｅＶ以上〜４０ｋｅＶ以下の範囲内）および中間
層の組成比、また窒化ホウ素薄膜の形成時の照射イオン
種、照射イオンの加速エネルギーおよびＢ／Ｎ＆Ｉｌ成
比（１以上〜６０以下の範囲内）を変化させ、他の条件
および形成プロセスは実施例１と同様にして、実施例２
〜１８とした。Further, the evaporated substance 14 during the formation of the intermediate layer in Example 1. The irradiation ion species, the acceleration energy of the irradiation ions (within the range of 1 keV or more to 40 keV or less), and the composition ratio of the intermediate layer, as well as the irradiation ion species, the acceleration energy of the irradiation ions, and the B/N&Il composition ratio during the formation of the boron nitride thin film. Example 2
~18.
この実施例２〜１４および実施例１の諸条件を表１に示
す。Table 1 shows the conditions of Examples 2 to 14 and Example 1.
なお実施例１〜１４に用いた窒素ガス、チタン（Ｔ ｉ
）およびケイ素（Ｓｉ）の純度は、全て９９、９９９
％であり、またホウ素（Ｂ）の純度は全て９９．７％で
ある。Note that the nitrogen gas used in Examples 1 to 14, titanium (Ti
) and silicon (Si) purity are all 99,999.
%, and the purity of boron (B) is all 99.7%.
（以下余白）
（表１）
（以下余白）
此ｍ二ｌ
第２図に示す薄膜形成装置を用いて、実施例における中
間層を形成せず、実施例１と同様の磁気へノド２０の磁
気記録媒体との摺動面１８に、純度９９．７％のホウ素
原子（Ｂ）の蒸着と同時に、イオン源１１に純度９９．
９９９％の窒素ガスを導入することにより、窒素イオン
を加速エネルギー２ｋｅＶで照射し、窒化ホウ素薄膜を
形成した。(The following is a margin) (The following is a margin) (Table 1) (The following is a margin) Using the thin film forming apparatus shown in FIG. At the same time, boron atoms (B) with a purity of 99.7% are deposited on the sliding surface 18 that contacts the recording medium, and at the same time, boron atoms (B) with a purity of 99.7% are deposited on the ion source 11.
By introducing 999% nitrogen gas, nitrogen ions were irradiated with an acceleration energy of 2 keV to form a boron nitride thin film.
また窒化ホウ素薄膜中のホウ素原子と窒素原子との粒子
数の割合（Ｂ／Ｎ組成比）は、膜全体で一定の８とした
。Further, the ratio of the number of particles of boron atoms to nitrogen atoms (B/N composition ratio) in the boron nitride thin film was set to be 8, which was constant throughout the film.
また窒化ホウ素薄膜の膜厚は１０００人とした。The thickness of the boron nitride thin film was 1000.
そして、さらに比較例１における窒素イオンの加速エネ
ルギーおよび形成した窒化ホウ素薄膜のＢ／Ｎ組成比を
変化させ、他の条件および形成プロセスを比較例１と同
様にしたものを比較例２および比較例３とした。Then, Comparative Example 2 and Comparative Example were obtained by further changing the acceleration energy of nitrogen ions and the B/N composition ratio of the formed boron nitride thin film in Comparative Example 1, and keeping the other conditions and formation process the same as in Comparative Example 1. It was set as 3.
この比較例１〜３の諸条件を表２に示す。Table 2 shows the conditions of Comparative Examples 1 to 3.
なお比較例１〜３に用いた窒素ガスの純度は、全て９９
．９９９％であり、またホウ素（Ｂ）の純度は全て９９
．７％である。The purity of the nitrogen gas used in Comparative Examples 1 to 3 was all 99.
．． 999%, and the purity of all boron (B) is 99%.
．． It is 7%.
（表２）
以上実施例１〜１４、比較例１〜３および無処理の各磁
気ヘッドを実際のテープレコーダに組み込み、酸化鉄よ
りなる磁気テープを用いて、テープ走行試験を行った。(Table 2) Each of the magnetic heads of Examples 1 to 14, Comparative Examples 1 to 3, and untreated magnetic heads were incorporated into an actual tape recorder, and a tape running test was conducted using a magnetic tape made of iron oxide.
テープ走行試験は、室温１８°Ｃおよび湿度４０％の条
件下で、２００時間で新品の磁気テープと交換し、計４
００時間行った。その後、実施例１〜１４．比較例１〜
３および無処理の各磁気ヘッドのコアの最大摩耗量［μ
ｍ］を触針式表面粗さ計で測定した。The tape running test was carried out under the conditions of room temperature 18°C and humidity 40%, and the magnetic tape was replaced with a new one every 200 hours, for a total of 4 cycles.
I went for 00 hours. After that, Examples 1 to 14. Comparative example 1~
3 and the maximum wear amount of the core of each untreated magnetic head [μ
m] was measured using a stylus type surface roughness meter.
この測定結果を表３に示す。The measurement results are shown in Table 3.
（表３）
以上の測定結果より、実施例１〜１４の最大摩耗量は０
．０２Ｃμｍ］以下であるのに対して、中間層を形成し
なかった比較例１〜３の最大摩耗量は、１０．０（μｍ
３以上であることがわかる。(Table 3) From the above measurement results, the maximum wear amount of Examples 1 to 14 was 0.
．． 02 Cμm] or less, whereas the maximum wear amount of Comparative Examples 1 to 3 in which no intermediate layer was formed was 10.0 (μm
It can be seen that the value is 3 or more.
また実施例１〜１４は、摺動面に形成した窒化ホウ素薄
膜に剥離は認められなかったが、比較例１〜３は、摺動
面に形成した窒化ホウ素薄膜に剥離が認められた。さら
に実施例１〜１４は、無処理の磁気ヘッド（磁気記録媒
体との摺動面に何も被覆していない磁気へ・７ド）に比
較して、著しく摩耗量が少ないことがわかる。Further, in Examples 1 to 14, no peeling was observed in the boron nitride thin film formed on the sliding surface, but in Comparative Examples 1 to 3, peeling was observed in the boron nitride thin film formed on the sliding surface. Furthermore, it can be seen that Examples 1 to 14 had significantly less wear than untreated magnetic heads (magnetic heads with no coating on the sliding surface with the magnetic recording medium).
［発明の効果］
請求項（１）記載の磁気ヘッドによれば、磁気記録媒体
との摺動面に形成した第ＩＩＩｂ族、第ＩＶａ族および
第ＩＶｂ族のうちの少なくとも一種以上を含んだ薄膜と
、この薄膜上に形成した窒化ホウ素１膜とを備えること
によって、磁気記録媒体との摺動面の耐摩耗性および膜
の密着性を著しく向上させることができる。[Effects of the Invention] According to the magnetic head according to claim (1), a thin film containing at least one of Group IIIb, Group IVa, and Group IVb formed on the sliding surface with the magnetic recording medium. By providing a single boron nitride film formed on this thin film, the wear resistance of the sliding surface with the magnetic recording medium and the adhesion of the film can be significantly improved.
請求項（２）記載の磁気へ、ｌ、の製造方法によれば、
磁気記録媒体との摺動面に、第ＩＩＩｂ族、第Ｗａ族お
よび第ＩＶｂ族のうちの少なくとも一種以上を含む物質
の真空蒸着と同時もしくは交互または蒸着後に、不活性
ガスイオンおよび窒素イオンのうちの少なくとも一方を
含むイオンを照射して、第■ｂ族、第］Ｖａ族および第
■ｂ族のうちの少なくとも一種以上を含んだ薄膜を形成
し、この薄膜上にホウ素を含む物質の真空蒸着と同時ま
たは交互に、少な（とも窒素イオンを含むイオンを照射
して窒化ホウ素薄膜を形成することにより、高硬度、熱
的および化学的安定性等の優れた特性を有するｃ−ＢＮ
またはｗ−ＢＮを含存する窒化ホウ素薄膜を密着性良く
、磁気ヘッドの磁気記録媒体との摺動面に形成すること
ができる。その結果、磁気ヘッドの磁気記録媒体との摺
動面の耐摩耗性を著しく向上させることができる。According to the method for producing a magnetism l according to claim (2),
Simultaneously or alternately with or after vacuum deposition of a substance containing at least one of group IIIb, group Wa, and group IVb, on the sliding surface with the magnetic recording medium, one of inert gas ions and nitrogen ions is applied. irradiation with ions containing at least one of the following to form a thin film containing at least one of group (IV) group, [Va] group, and group (IV) group, and vacuum evaporation of a substance containing boron on this thin film. c-BN, which has excellent properties such as high hardness, thermal and chemical stability, is formed by simultaneously or alternately irradiating a small amount of ions (including nitrogen ions) to form a boron nitride thin film.
Alternatively, a boron nitride thin film containing w-BN can be formed with good adhesion on the sliding surface of the magnetic head with the magnetic recording medium. As a result, the wear resistance of the sliding surface of the magnetic head against the magnetic recording medium can be significantly improved.
また第ＩＩＩｂ族、第ＩＶａ族および第ＩＶｂ族のうち
の少なくとも一種以上を含んだ薄膜および窒化ホウ素薄
膜の形成は、比較的低い加速エネルギーを有するイオン
の照射で可能なため、磁気ヘッドに発生する熱を抑える
ことができる。したがって、これら膜の被覆工程は、磁
気ヘッドに悪影響を及ぼすことなく、磁気ヘッド組立の
最終工程に施すことができ、工業的に極めて有益な方法
である。In addition, the formation of a thin film containing at least one of Group IIIb, Group IVa, and Group IVb and a boron nitride thin film is possible by irradiation with ions having relatively low acceleration energy. It can suppress fever. Therefore, the coating process with these films can be performed in the final step of assembling the magnetic head without adversely affecting the magnetic head, and is an extremely useful method industrially.
第１図はこの発明の磁気ヘッドの一例を示す概念図、第
２図はこの発明の磁気ヘッドの製造方法に用いられる薄
膜形成装置の一例を示す概念図、第３図は実施例に用い
たオーディオ用磁気ヘッドを示す斜視図である。
２・・・摺動面、３・・・中間層（第ＩＩＩｂ族、第Ｉ
Ｖａ族および第ｒＶｂ族のうちの少なくとも一種以上を
含んだ薄膜）、４・・・窒化ホウ素薄膜、７・・・磁気
ヘッド
２−唐ｎ面
工盲含りだ薄Ｍ）
４−窒化ｙ、”ｙ−！１唄
７−！気＼ット
図
＼
第２１Ｎ
２
手続補正書
（左〜
第
図
平成２年７月６日
平成２年
特
許
願
第０６７９２５号
２゜
発明の名称
磁気ヘッドとその製造方法
８
３゜
補正をする者
１呵牛との関係FIG. 1 is a conceptual diagram showing an example of the magnetic head of this invention, FIG. 2 is a conceptual diagram showing an example of a thin film forming apparatus used in the method of manufacturing the magnetic head of this invention, and FIG. FIG. 2 is a perspective view showing an audio magnetic head. 2... Sliding surface, 3... Intermediate layer (group IIIb, group I
a thin film containing at least one of group Va and group rVb), 4... boron nitride thin film, 7... magnetic head 2--tang n-face blank-containing thin film (M), 4-nitride y, ``y-! 1 song 7-! Ki\t diagram\ 21N 2 Procedural amendment (left ~ Figure July 6, 1990 1990 Patent Application No. 067925 2゜Name of invention Magnetic head and its Manufacturing method 8 Person who makes the 3° correction 1 Relationship with the cow
Claims (2)
第IVａ族および第IVｂ族元素のうちの少なくとも一種以
上を含む薄膜と、 この薄膜上に形成した窒化ホウ素薄膜とを備えた磁気ヘ
ッド。(1) Group IIIb formed on the sliding surface with the magnetic recording medium,
A magnetic head comprising a thin film containing at least one of Group IVa and Group IVb elements, and a boron nitride thin film formed on the thin film.
族および第IVｂ族元素のうちの少なくとも一種以上を含
む物質の真空蒸着と同時もしくは交互または蒸着後に、
不活性ガスイオンおよび窒素イオンのうちの少なくとも
一方を含むイオンを照射して、前記第IIIｂ族，第IVａ
族および第IVｂ族元素のうちの少なくとも一種以上を含
んだ薄膜を形成し、 この薄膜上に、ホウ素を含む物質の真空蒸着と同時また
は交互に、少なくとも窒素イオンを含むイオンを照射し
て窒化ホウ素薄膜を形成することを特徴とする磁気ヘッ
ドの製造方法。(2) Group IIIb, IVa on the sliding surface with the magnetic recording medium.
Simultaneously or alternately with or after the vacuum deposition of a substance containing at least one of group and IVb elements,
The Group IIIb and IVa ions are irradiated with ions containing at least one of an inert gas ion and a nitrogen ion.
A thin film containing at least one of Group IVb elements and Group IVb elements is formed, and ions containing at least nitrogen ions are irradiated onto this thin film simultaneously or alternately with the vacuum deposition of a substance containing boron to form boron nitride. A method of manufacturing a magnetic head characterized by forming a thin film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6792590A JPH03267363A (en) | 1990-03-16 | 1990-03-16 | Magnetic head and production thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6792590A JPH03267363A (en) | 1990-03-16 | 1990-03-16 | Magnetic head and production thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH03267363A true JPH03267363A (en) | 1991-11-28 |
Family
ID=13358980
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6792590A Pending JPH03267363A (en) | 1990-03-16 | 1990-03-16 | Magnetic head and production thereof |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH03267363A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5475552A (en) * | 1992-07-31 | 1995-12-12 | Matsushita Electric Industrial Co., Ltd. | Magnetic head having a chromium nitride protective film for use in a magnetic recording and/or reproducing apparatus and a method of manufacturing the same |
| US5636092A (en) * | 1992-07-31 | 1997-06-03 | Matsushita Electric Industrial Co., Ltd. | Magnetic head having chromium nitride protective film for use in magnetic recording and/or reproducing apparatus and method of manufacturing the same |
-
1990
- 1990-03-16 JP JP6792590A patent/JPH03267363A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5475552A (en) * | 1992-07-31 | 1995-12-12 | Matsushita Electric Industrial Co., Ltd. | Magnetic head having a chromium nitride protective film for use in a magnetic recording and/or reproducing apparatus and a method of manufacturing the same |
| US5636092A (en) * | 1992-07-31 | 1997-06-03 | Matsushita Electric Industrial Co., Ltd. | Magnetic head having chromium nitride protective film for use in magnetic recording and/or reproducing apparatus and method of manufacturing the same |
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