JPH03263712A - Formation of transparent conducting film - Google Patents
Formation of transparent conducting filmInfo
- Publication number
- JPH03263712A JPH03263712A JP6364990A JP6364990A JPH03263712A JP H03263712 A JPH03263712 A JP H03263712A JP 6364990 A JP6364990 A JP 6364990A JP 6364990 A JP6364990 A JP 6364990A JP H03263712 A JPH03263712 A JP H03263712A
- Authority
- JP
- Japan
- Prior art keywords
- vacuum
- processing tank
- conductive film
- reducing gas
- transparent conductive
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000015572 biosynthetic process Effects 0.000 title abstract 2
- 238000000034 method Methods 0.000 claims abstract description 26
- 239000007789 gas Substances 0.000 claims abstract description 24
- 238000010438 heat treatment Methods 0.000 claims abstract description 20
- 239000000758 substrate Substances 0.000 claims abstract description 11
- 229910044991 metal oxide Inorganic materials 0.000 claims abstract description 9
- 150000004706 metal oxides Chemical class 0.000 claims abstract description 9
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 8
- 239000001301 oxygen Substances 0.000 claims abstract description 8
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 8
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 7
- 229910001873 dinitrogen Inorganic materials 0.000 claims abstract description 7
- 238000009489 vacuum treatment Methods 0.000 claims description 7
- 230000000694 effects Effects 0.000 abstract description 6
- 239000000284 extract Substances 0.000 abstract 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 11
- 229910052709 silver Inorganic materials 0.000 description 11
- 239000004332 silver Substances 0.000 description 11
- 239000000853 adhesive Substances 0.000 description 8
- 230000001070 adhesive effect Effects 0.000 description 8
- 238000010586 diagram Methods 0.000 description 6
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 4
- 238000007796 conventional method Methods 0.000 description 4
- 238000010304 firing Methods 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- 230000007423 decrease Effects 0.000 description 3
- 230000001681 protective effect Effects 0.000 description 3
- 238000007740 vapor deposition Methods 0.000 description 3
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 2
- 239000010410 layer Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 235000019353 potassium silicate Nutrition 0.000 description 2
- 239000011241 protective layer Substances 0.000 description 2
- 238000006722 reduction reaction Methods 0.000 description 2
- NTHWMYGWWRZVTN-UHFFFAOYSA-N sodium silicate Chemical compound [Na+].[Na+].[O-][Si]([O-])=O NTHWMYGWWRZVTN-UHFFFAOYSA-N 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000003601 intercostal effect Effects 0.000 description 1
- 210000000496 pancreas Anatomy 0.000 description 1
- 229920000729 poly(L-lysine) polymer Polymers 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
Landscapes
- Physical Vapour Deposition (AREA)
- Manufacturing Of Electric Cables (AREA)
Abstract
Description
【発明の詳細な説明】
〔概 要〕
本発明は金属酸化物からなる透明導電膜の形成方法に関
し、
低抵抗値化のための真空熱処理工程に要する時間の短縮
と、安定性に優れる透明導電膜の提供を目的とし、
絶縁基板上に金属酸化物からなる透明導電膜を被着した
パネルの該透明導電膜に含まれる過剰の酸素を除去して
、低抵抗値の透明導電膜を得る透明導電膜の形成方法に
おいて、真空処理槽内にパネルを配置して真空にした後
、該真空処理槽内に微量の還元性ガスを導入して、加熱
処理を行う構成とし、また、上記真空処理槽内に導入す
る還元性ガスの量が数Ｔｏｒｒ〜数十Ｔｏｒｒとする構
成とし、更にまた、上記還元性ガスに窒素ガスを混入し
た構成とする。[Detailed Description of the Invention] [Summary] The present invention relates to a method for forming a transparent conductive film made of a metal oxide, which shortens the time required for a vacuum heat treatment process to lower the resistance value, and provides a highly stable transparent conductive film. For the purpose of providing a transparent conductive film, excess oxygen contained in the transparent conductive film of a panel having a transparent conductive film made of a metal oxide coated on an insulating substrate is removed to obtain a transparent conductive film with a low resistance value. In the method for forming a conductive film, a panel is placed in a vacuum treatment tank to create a vacuum, and then a trace amount of reducing gas is introduced into the vacuum treatment tank to perform heat treatment, and the vacuum treatment The amount of reducing gas introduced into the tank is from several Torr to several tens of Torr, and furthermore, nitrogen gas is mixed into the reducing gas.
本発明は金属酸化物からなる透明導電膜の形威方法に関
するものである。The present invention relates to a method for forming a transparent conductive film made of metal oxide.
蒸着法やスパッタ法等の手段でガラス等の透明絶縁基板
上に、例えばＩＴＯ（酸化インジウム錫）等の金属酸化
物からなる透明導電膜を形成し。A transparent conductive film made of a metal oxide such as ITO (indium tin oxide) is formed on a transparent insulating substrate such as glass by a vapor deposition method or a sputtering method.
たパネルは、ＣＲＴデイスプレィと靭み合わせにタッチ
パネルやＰＤＰ （プラズマデイスプレィ）に応用され
てし）る。These panels are applied to touch panels and PDPs (plasma displays) along with CRT displays.
第２図は透明導電膜２を用いたタッチパネルの構成を示
すものであり、第３図はその製造王程４：示ずブロック
図である。FIG. 2 shows the structure of a touch panel using the transparent conductive film 2, and FIG. 3 is a block diagram (not shown) of the manufacturing process.
以下、第３図中の丸数字を付した各工程に従って説明す
る。Hereinafter, each process marked with a circled number in FIG. 3 will be explained.
■透明絶縁基板１１．にｒＴＯよりなる透明導電膜２を
蒸着法もしくはスパッタリング法番こより被着する。■Transparent insulating substrate 11. Then, a transparent conductive film 2 made of rTO is deposited by vapor deposition or sputtering.
■銀電極１４を形成する箇所を除いた上記透明導電膜２
の１層に５ｉＯｚ保護膵５を蒸着する。■The transparent conductive film 2 excluding the part where the silver electrode 14 is formed
5iOz protected pancreas 5 is deposited in one layer.
■上記ＳｉＯ，保護服＋５を蒸着Ｌ’Ｔいない透明導電
膜２の露出箇所に、外部機器に導通する電極りなる銀電
極１４を図ホしない接着剤を介して印刷や塗布等のｆ段
で形成する。■ The above-mentioned SiO, protective clothing + 5 is deposited on the exposed part of the transparent conductive film 2 without L'T, and the silver electrode 14, which will be the electrode to be electrically connected to the external equipment, is attached by printing or coating with an adhesive. Form.
■更に５ｉ０２層上にガラス保護層６さなろ水ガラスを
、Ｌ記録電極１４を形成した箇所を除いて、塗布する。(2) Furthermore, a glass protective layer 6 of water glass is coated on the 5i02 layer except for the area where the L recording electrode 14 is formed.
■人気中で高温焼成処理を行い、七記水ガラスを硬化さ
七、ガラス保護層６を形成するεともに５．１記銀電極
１４を形成するのに使用した上記接着剤を蒸発さゼ・る
。5. The adhesive used to form the silver electrode 14 is evaporated to form the glass protective layer 6. Ru.
ところで■記高温焼成処理は、大気中において、通常４
５０〜４８０℃程度の温度下で行われるために１、金属
酸化物からなる透明導電膜２が人気中の酸素によって更
に酸化され、抵抗値か該焼成曲の値の数ｍ〜１０倍以上
に十尉するために、このままの状態では実用に適さない
こととなる。By the way, the high-temperature firing treatment described in
Since the process is carried out at a temperature of about 50 to 480 degrees Celsius, the transparent conductive film 2 made of metal oxide is further oxidized by the popular oxygen, and the resistance value increases from several meters to more than 10 times the value of the firing curve. In order to become a tenth lieutenant, it would be unsuitable for practical use in its current state.
ぞこで、
■パネル３を真空中で、４００℃程度に加熱する真空熱
処理を施し、２に記透明導電膜２に過剰に含まれる酸素
の一部を除去Ｌ７、該透明導電膜２の抵抗値を、上記■
に示した焼成処理を行う前の水準に低下させる。Here, 1) the panel 3 is subjected to a vacuum heat treatment in which the panel 3 is heated to about 400° C. to remove part of the oxygen excessively contained in the transparent conductive film 2 described in 2; and the resistance of the transparent conductive film 2 is The value above
Reduce the temperature to the level before performing the firing treatment shown in .
第４図はこのような真空熱処理に用いる従来の装置ω概
略構成図である。ガラス製Ｑ）真空処理槽２１内に透明
導電膜２等が形成されたパネル３を所定の間隔を保つで
設置Ｌ２、排気孔２２ａを介して、真空ポンプ２２で該
負空処理槽２１内の空気を排出し、！ Ｘ １０−”Ｔ
ｏｒｖ程度の真空度Ｃごした後、上記真空処理槽２１内
に配置し、たヒータ２３によりパネル３を４００℃程度
に加熱して、そωま４；の状態で約６時間保持し２．７
その後自然冷却さセる。FIG. 4 is a schematic diagram of a conventional apparatus ω used for such vacuum heat treatment. Glass Q) Panels 3 on which transparent conductive films 2, etc. are formed are installed in the vacuum processing tank 21 at a predetermined interval L2, and the vacuum pump 22 is used to pump the inside of the negative air processing tank 21 through the exhaust hole 22a. Exhaust the air! X 10-”T
After reducing the vacuum degree to C, the panel 3 was placed in the vacuum treatment tank 21, heated to about 400° C. by the heater 23, and kept at about 400° C. for about 6 hours.2. 7
Then let it cool naturally.
ところで、上記のよ・うな真空熱処理工程では、６透明
感電欣２の抵抗値が、所定の値に達するまでには、６〜
８時間と比較的長時間を嬰する。By the way, in the vacuum heat treatment process as described above, the resistance value of the 6-transparent electric shock pole 2 reaches a predetermined value by 6~
It takes a relatively long time, 8 hours.
また、真空処理槽２１中ω真空度が高いたぬに、該真空
処理槽２１内やパネル３の温度の変化を専ら幅側に＄１
６ ｉ：ととなるため、加熱ビ、−夕２３４？よって処
理温度である４００”Ｃに到るまでに要り。In addition, since the degree of vacuum is high in the vacuum processing tank 21, the temperature change inside the vacuum processing tank 21 and the panel 3 is controlled by $1 on the width side.
6 i: Because it becomes heating Bi, - evening 234? Therefore, it is necessary to reach the processing temperature of 400''C.
る５１間、および１．記処理温度から室温に戻るまでＧ
こ要する肋間が、長くかかることとなる。51, and 1. G from the above processing temperature until it returns to room temperature.
The intercostal space required will take a long time.
従、て、このような真空熱処理［程の１サイクル番ご要
する時間は合計１６〜２４時間にもお、Ｌび、作業効率
を向トする七でネックとなっている。Therefore, the time required for one cycle of such vacuum heat treatment is a total of 16 to 24 hours, which is a bottleneck in reducing work efficiency.
更にまた、このような長時間にわたって、高真空度、高
温の下にパネル３は曝されることとｔする）、・め、↓
−記銀電極１４をパネル３に付着させるための１１着剤
が、史に蒸発することとなり、該ｗ、、電極１４の接着
強度が休Ｆする傾１ｉｉ１にあり、銀電極１４が剥離し
７たり、銀電極１４の付近の抵抗値が急変する、といっ
た事態を生しる。Furthermore, the panel 3 will be exposed to high vacuum and high temperatures for such a long time),・Me,↓
- The adhesive 11 for attaching the silver electrode 14 to the panel 3 evaporates over time, and the adhesive strength of the electrode 14 is at a decreasing trend 1ii1, and the silver electrode 14 peels off. Otherwise, the resistance value near the silver electrode 14 may suddenly change.
ぞこご、本発明はに記の様な事情に鑑み、真空熱処理工
程に要する時間の短縮を実現するεともに、安穿性に優
れるパネルを得ることのできる透明導電膜の形成方法を
提供することを目的とする。In view of the above circumstances, the present invention provides a method for forming a transparent conductive film that can shorten the time required for the vacuum heat treatment process and provide a panel with excellent perforation properties. The purpose is to
（課題を遠戚するための手段）
上記ω１１的を遠戚づ“るために、本発明では、以１・
θ）Ａ法を用いる。゛すなわち、絶縁基板１４−に金属
酸化物からなる透明導電膜２を被着したパネル３の該透
明導電膜２に含まれる過剰の酸素を除去して、低抵抗値
の透明導電膜を得る透明導電膜の形成方法において、真
空処理槽４内にパネル３を配置して真空にした後、該真
空処理槽４内に微量の還元性ガスを導入して、加熱処理
を行う透明導電膜の形成方法である。(Means for distantly related to the problem) In order to make the above ω11 objective distantly related, in the present invention, the following 1.
θ) Use method A.゛That is, in a panel 3 in which a transparent conductive film 2 made of a metal oxide is coated on an insulating substrate 14-, excess oxygen contained in the transparent conductive film 2 is removed to obtain a transparent conductive film with a low resistance value. In the method for forming a conductive film, a panel 3 is placed in a vacuum treatment tank 4 to create a vacuum, and then a trace amount of reducing gas is introduced into the vacuum treatment tank 4 to form a transparent conductive film. It's a method.
また、上記真空処理槽４内に導入する還元性ガスの量は
数Ｔｏｒｒ〜数十Ｔｏｒｒであることが望ましく、更に
上記還元性ガスに窒素ガスを混入することも望ましい。Further, the amount of the reducing gas introduced into the vacuum processing tank 4 is desirably from several Torr to several tens of Torr, and it is also desirable to mix nitrogen gas into the reducing gas.
真空処理槽４内に微量導入された還元性ガスは透明導電
膜２を還元して、過剰の酸素を迅速に抜き取る。また、
この還元性ガスの対流あるいは熱伝導効果によって、該
真空処理槽４内を迅速に加熱することができる。The small amount of reducing gas introduced into the vacuum processing tank 4 reduces the transparent conductive film 2 and quickly removes excess oxygen. Also,
Due to the convection or heat conduction effect of this reducing gas, the inside of the vacuum processing tank 4 can be rapidly heated.
尚、上記還元性ガスの量は数Ｔｏｒｒから数十Ｔｏｒｒ
の範囲にあることが望ましく、数Ｔｏｒｒよりも少ない
量であると、該真空熱処理工程に要する時間を充分に短
縮することができず、数十Ｔｏｒｒを越えた量であると
、過度の還元反応を生し、透明導電膜２の透過率が低下
して、好ましくない。Note that the amount of the reducing gas is from several Torr to several tens of Torr.
If the amount is less than several Torr, the time required for the vacuum heat treatment process cannot be sufficiently shortened, and if the amount exceeds several tens of Torr, excessive reduction reaction may occur. This is undesirable because the transmittance of the transparent conductive film 2 decreases.
更に、上記還元性ガスを窒素ガスとともに、真空処理槽
４内に導入することによって、対流あるいは熱伝導によ
る加熱効果を一層高めることとなる。Furthermore, by introducing the above-mentioned reducing gas into the vacuum processing tank 4 together with nitrogen gas, the heating effect due to convection or heat conduction can be further enhanced.
以下、本発明を実施例に基づいて更に詳細に説明する。 Hereinafter, the present invention will be explained in more detail based on examples.
第１図は本発明による実施例の概略構成図である。FIG. 1 is a schematic diagram of an embodiment according to the present invention.
同図において、従来から周知されている方法によって、
ＩＴＯ（酸化インジウム錫〉からなる透明導電膜２を蒸
着法によって形成し、その後、銀電極１４、Ｓｉｎ、保
護膜５、ガラス保護膜６を透明絶縁基板１上に積層・形
成したパネル３を真空処理槽４中に、２段に積層したｆ
２置棚８上に横方向に並置する。この後、排気孔１３を
介して、真空ポンプ１１にて排気を行い、該真空処理槽
４内を真空度Ｉ Ｘ １０−”Ｔｏｒｒにまで減圧する
。In the figure, by a conventionally well-known method,
A transparent conductive film 2 made of ITO (indium tin oxide) is formed by a vapor deposition method, and then a panel 3 in which a silver electrode 14, Sin, a protective film 5, and a glass protective film 6 are laminated and formed on a transparent insulating substrate 1 is placed in a vacuum. In the treatment tank 4, f laminated in two stages
They are placed side by side on two shelves 8 in the horizontal direction. Thereafter, the vacuum pump 11 performs exhaustion through the exhaust hole 13 to reduce the pressure in the vacuum processing tank 4 to a vacuum degree of I.times.10-'' Torr.
上記減圧が完了すると加熱ヒータ７で真空処理槽４内を
一旦、４００℃となるまで加熱し、パネル３や真空処理
槽４内面に含有される水分やガスの除去を行い、更に真
空ポンプ１１にて排気を行って、上記真空度Ｉ Ｘ １
０−”Ｔｏｒｒに回復させる。When the above pressure reduction is completed, the inside of the vacuum processing tank 4 is heated once to 400°C by the heater 7 to remove moisture and gas contained in the panel 3 and the inside of the vacuum processing tank 4, and then the vacuum pump 11 is heated. and evacuated to the above vacuum degree I
Restore to 0-”Torr.
この後、真空処理槽４内部の気圧が数Ｔｏｒｒとなるよ
うに気圧測定袋２１２で気圧を測定しながら、コック９
を操作して、ボンベ１０から水素ガスを導入する。After that, while measuring the atmospheric pressure with the atmospheric pressure measuring bag 212 so that the atmospheric pressure inside the vacuum processing tank 4 becomes several Torr, the cock 9
to introduce hydrogen gas from the cylinder 10.
上記の状態、すなわち加熱し−タ７を調整して、真空処
理槽４内を４００℃に保った状態で、３〜４時間経過後
、加熱ヒータ７をオフにして、自然冷却させることによ
って真空熱処理が完了する。After 3 to 4 hours in the above state, that is, adjusting the heating heater 7 and keeping the inside of the vacuum processing tank 4 at 400°C, the heater 7 is turned off and the vacuum is allowed to cool naturally. Heat treatment is completed.
尚、上記真空処理槽４中に導入する還元性ガスとしては
、水素ガス単独でなく、水素ガスと窒素ガスを、例えば
、１：９の分圧比で混合したガスを使用しても良く、こ
の場合、水素ガスを単独で使用した場合よりも、更に、
真空処理槽４内を迅速に加熱することができ、処理時間
を短縮することができる。As the reducing gas introduced into the vacuum processing tank 4, a mixture of hydrogen gas and nitrogen gas at a partial pressure ratio of, for example, 1:9 may be used instead of hydrogen gas alone. If hydrogen gas is used alone,
The inside of the vacuum processing tank 4 can be heated quickly, and the processing time can be shortened.
上記のように本発明による方法で、真空熱処理を行った
場合と従来法による場合との比較を後掲する第１表に示
す。Table 1 below shows a comparison between the vacuum heat treatment performed by the method of the present invention and the conventional method as described above.
第１表からも明らかなように、本発明によれば、該真空
熱処理工程の１サイクルに要する時間は従来の１８時間
から、１２〜１０時間に短縮することができ、また、パ
ネル３が真空の下に曝される時間を短縮することができ
るので、銀電極１４を透明絶縁基板１に固着する接着剤
が過度に散逸することがなく、該銀電極の接着強度（引
き剥がし強度）も従来法に比べて格段に向上し、安定性
に優れる製品を得ることができる。As is clear from Table 1, according to the present invention, the time required for one cycle of the vacuum heat treatment process can be shortened from the conventional 18 hours to 12 to 10 hours. Since the time for which the silver electrode is exposed to the transparent insulating substrate 1 can be shortened, the adhesive that fixes the silver electrode 14 to the transparent insulating substrate 1 does not dissipate excessively, and the adhesive strength (peel strength) of the silver electrode is lower than that of the conventional one. It is possible to obtain a product that is much improved and has excellent stability compared to the conventional method.
更に、本発明による真空熱処理を施した後の透明導電膜
の膜抵抗値は、水ガラスを固化さセるための焼成工程前
の膜抵抗値の０．７倍にまで低下し、従来法に比べて、
低い膜抵抗値の透明導電膜を得ることが出来る。Furthermore, the membrane resistance value of the transparent conductive film after the vacuum heat treatment according to the present invention is reduced to 0.7 times the membrane resistance value before the firing process for solidifying water glass, which is lower than that of the conventional method. Compared to,
A transparent conductive film with a low film resistance value can be obtained.
本発明法と従来法の比較
第 １ 表
く以ト余７＞
〔本発明の効果〕
以」二のように、本発明によれば、真空処理槽内に導入
された微量の還元性ガスによって、金属酸化物からなる
透明導電膜が還ルされる速度が速くなり、該透明導電膜
θ〕抵抗値が所宗の値に低下するまでに要する時間を短
縮することができる。Comparison of the method of the present invention and the conventional method Table 1 Remarks 7> [Effects of the present invention] As described in 2 below, according to the present invention, a trace amount of reducing gas introduced into the vacuum processing tank The rate at which the transparent conductive film made of metal oxide is reduced becomes faster, and the time required for the resistance value of the transparent conductive film θ to decrease to the desired value can be shortened.
また、該還元性ガス単独、または該還元性ガスど窒素ガ
スとの混合ガスの熱伝導効果によって、真空処理槽内の
温度の変化速度も速くなり、該真空熱処理に要する時間
が短縮することができる。In addition, due to the heat conduction effect of the reducing gas alone or a mixture of the reducing gas and nitrogen gas, the rate of temperature change in the vacuum processing tank becomes faster, and the time required for the vacuum heat treatment can be shortened. can.
更に、Ｌ記の効果によっ°ζ、外部の機器と接続するた
めに設けられた銀電極と絶縁基板とω接着性を確保する
接着剤が、真空中に散逸して、１接着強度の低下を招く
ことがなくなり、透明導電膜を形成したタッチパネルや
Ｐｌｌ） Ｐ等のデバイスは、安定しまた晶質を保つこ
とが出来る。Furthermore, due to the effect described in L, the adhesive that ensures ω adhesion between the silver electrode and the insulating substrate provided for connection with external equipment is dissipated into the vacuum, resulting in a decrease in adhesive strength. Devices such as touch panels and PLLs on which transparent conductive films are formed are stable and can maintain their crystallinity.
第１図は本発明の１実施例の概略構成図、第２図はタッ
チパネルのｉ酪断面図、第３図は透明導′敵１模の形成
王程を示すブロック図、例の概略構成図である。
図中、１−透明絶縁基板、
バ名ル、４−真空処理槽。
透明導電膜、
第４図は従来
７″
オ濤θ馴１釣帥１）／）燦酩、積鮫図
第１図
タッチへ′ネル／）湘Ｖ時口幹面図
第２図
税来倒０脱蕗積威図
第４図
ｔｖ３月１ｔｌの形、６文、工、１弓Ｅ、嚢示ゴフ。ン
７図第
３
図Fig. 1 is a schematic configuration diagram of one embodiment of the present invention, Fig. 2 is a cross-sectional view of a touch panel, and Fig. 3 is a block diagram showing the process of forming a transparent conductor 1 model, and a schematic configuration diagram of an example. It is. In the figure, 1-transparent insulating substrate, bar, 4-vacuum processing tank. Transparent conductive film, Figure 4 is the conventional 7'' Figure 4: Shape of tv March 1tl, 6 sentences, work, 1 bow E, bag showing Goff. Figure 7 Figure 3
Claims (1)
膜（２）を被着したパネル（３）の該透明導電膜（２）
に含まれる過剰の酸素を除去して、低抵抗値の透明導電
膜を得る透明導電膜の形成方法において、 真空処理槽（４）内にパネル（３）を配置して真空にし
た後、該真空処理槽（４）内に微量の還元性ガスを導入
して、加熱処理を行うことを特徴とする透明導電膜の形
成方法。 〔２〕上記真空処理槽（４）内に導入する還元性ガスの
量が数Ｔｏｒｒ〜数十Ｔｏｒｒであることを特徴とする
請求項第１項に記載の透明導電膜の形成方法。 〔３〕上記還元性ガスに窒素ガスを混入したことを特徴
とする請求項第１項に記載の透明導電膜の形成方法。[Scope of Claims] [1] A transparent conductive film (2) of a panel (3) in which a transparent conductive film (2) made of a metal oxide is deposited on an insulating substrate (1).
In a method for forming a transparent conductive film in which a transparent conductive film with a low resistance value is obtained by removing excess oxygen contained in the A method for forming a transparent conductive film, which comprises introducing a small amount of reducing gas into a vacuum treatment tank (4) and performing heat treatment. [2] The method for forming a transparent conductive film according to claim 1, wherein the amount of reducing gas introduced into the vacuum processing tank (4) is from several Torr to several tens of Torr. [3] The method for forming a transparent conductive film according to claim 1, wherein nitrogen gas is mixed in the reducing gas.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6364990A JPH03263712A (en) | 1990-03-13 | 1990-03-13 | Formation of transparent conducting film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6364990A JPH03263712A (en) | 1990-03-13 | 1990-03-13 | Formation of transparent conducting film |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH03263712A true JPH03263712A (en) | 1991-11-25 |
Family
ID=13235410
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6364990A Pending JPH03263712A (en) | 1990-03-13 | 1990-03-13 | Formation of transparent conducting film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH03263712A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2013140684A (en) * | 2011-12-28 | 2013-07-18 | Dainippon Printing Co Ltd | Annealing method, film production method, annealing device and film production device |
-
1990
- 1990-03-13 JP JP6364990A patent/JPH03263712A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2013140684A (en) * | 2011-12-28 | 2013-07-18 | Dainippon Printing Co Ltd | Annealing method, film production method, annealing device and film production device |
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