KR101293212B1 - Manufacturing method for mosi2 heatingelement and furnace comprising mosi2 heatingelement manufactured by the same - Google Patents
Manufacturing method for mosi2 heatingelement and furnace comprising mosi2 heatingelement manufactured by the same Download PDFInfo
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- KR101293212B1 KR101293212B1 KR1020120009869A KR20120009869A KR101293212B1 KR 101293212 B1 KR101293212 B1 KR 101293212B1 KR 1020120009869 A KR1020120009869 A KR 1020120009869A KR 20120009869 A KR20120009869 A KR 20120009869A KR 101293212 B1 KR101293212 B1 KR 101293212B1
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- heating element
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 23
- 238000010438 heat treatment Methods 0.000 claims abstract description 74
- 229910016006 MoSi Inorganic materials 0.000 claims description 70
- 238000000034 method Methods 0.000 claims description 14
- 229910052760 oxygen Inorganic materials 0.000 claims description 14
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 12
- 239000001301 oxygen Substances 0.000 claims description 12
- 238000001816 cooling Methods 0.000 claims description 5
- 239000011324 bead Substances 0.000 claims description 3
- YXTPWUNVHCYOSP-UHFFFAOYSA-N bis($l^{2}-silanylidene)molybdenum Chemical compound [Si]=[Mo]=[Si] YXTPWUNVHCYOSP-UHFFFAOYSA-N 0.000 abstract 12
- 229910021343 molybdenum disilicide Inorganic materials 0.000 abstract 12
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 4
- 235000012239 silicon dioxide Nutrition 0.000 abstract 2
- 239000000377 silicon dioxide Substances 0.000 abstract 2
- 238000005452 bending Methods 0.000 abstract 1
- 239000010408 film Substances 0.000 description 40
- 229910004298 SiO 2 Inorganic materials 0.000 description 27
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 20
- 238000005245 sintering Methods 0.000 description 8
- 239000003513 alkali Substances 0.000 description 4
- 238000007254 oxidation reaction Methods 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 238000000313 electron-beam-induced deposition Methods 0.000 description 1
- RHZWSUVWRRXEJF-UHFFFAOYSA-N indium tin Chemical compound [In].[Sn] RHZWSUVWRRXEJF-UHFFFAOYSA-N 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000000053 physical method Methods 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000005118 spray pyrolysis Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000013077 target material Substances 0.000 description 1
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B6/00—Heating by electric, magnetic or electromagnetic fields
- H05B6/02—Induction heating
- H05B6/34—Arrangements for circulation of melts
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B3/00—Ohmic-resistance heating
- H05B3/10—Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B2213/00—Aspects relating both to resistive heating and to induction heating, covered by H05B3/00 and H05B6/00
- H05B2213/02—Stirring of melted material in melting furnaces
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- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Physical Vapour Deposition (AREA)
Abstract
Description
본 발명은 MoSi2 발열체 제조방법 및 이에 의해 제조된 MoSi2 발열체를 포함하는 노에 관한 것으로서, 더욱 상세하게는 산화인듐주석 소결의 공정에서 사용되는 MoSi2 발열체 제조방법 및 이에 의해 제조된 MoSi2 발열체를 포함하는 노에 관한 것이다.
The invention MoSi 2 heating element manufacturing method and thus the MoSi relates to a furnace comprising a second heating element, and more particularly, to method MoSi 2 heater used in the process of the indium tin sintered oxide and hence the MoSi 2 heating element manufactured by manufactured by It relates to a furnace including.
일반적으로 LCD(Liquid Crystal Display), PDP(Plasma Display Panel), ELD(Electro Luminescence Display) 등의 평판 디스플레이나 태양전지의 전극 재료로써 사용되는 투명 도전성 막에는 산화인듐주석(Indium-tin Oxide, ITO) 막이 사용되고 있다.Generally, indium tin oxide (ITO) is used for transparent conductive films used as electrode materials for flat panel displays or solar cells such as liquid crystal displays (LCDs), plasma display panels (PDPs), and electroluminescent displays (ELDs). The membrane is being used.
특히, 산화인듐주석 박막은 투명성, 전도성 등이 좋고 에칭 가공이 가능하며 기판과의 밀착성이 우수하여 평면 디스플레이 장치용 투명 전극, 태양 전지의 윈도우 재료 및 정전기 방지 전도성막에 광범위하게 사용되고 있다. In particular, indium tin oxide thin films have good transparency, conductivity, etc., can be etched and have excellent adhesion to substrates, and thus are widely used in transparent electrodes for flat panel display devices, window materials for solar cells, and antistatic conductive films.
산화인듐주석 박막을 형성하는 방법은 스프레이 열 분해법, 화학 기상 층착법(Chemical Vapor Deposition, CVD) 등의 화학적인 방법과 전자 빔 증착법, 스퍼터링 증착법 등의 물리적인 방법이 있는데, 이들 중에서 스퍼터링 증착법은 대면적화가 용이하고, 고성능의 막을 효율적으로 성막할 수 있어 여러 분야에서 널리 사용되고 있다.Formation of the indium tin oxide thin film has a chemical method such as spray pyrolysis, chemical vapor deposition (CVD), and physical methods such as electron beam deposition, sputter deposition, etc. It has been widely used in various fields because it is easy to make an area and can form a high-performance film efficiently.
스퍼터링 증착법은 진공 챔버 내에 아르곤(Ar) 가스와 같은 공정 가스를 투입하고 산화인듐주석 타겟재를 포함하는 캐소우드(Cathode)에 직류(DC) 전력 또는 고주파(RF) 전력을 공급하여 글로우(glow) 방전을 발생시켜서 기판에 증착막을 성막(成膜)한다.In the sputtering deposition method, a process gas such as argon (Ar) gas is introduced into a vacuum chamber, and a glow is supplied by supplying direct current (DC) power or high frequency (RF) power to a cathode including an indium tin oxide target material. The discharge is generated to form a deposited film on the substrate.
스퍼터링 증착법으로 고품질의 산화인듐주석 박막을 형성하기 위해서는 고밀도의 산화인듐주석 타겟이 필요하고, 이러한 고밀도의 산화인듐주석 타겟은 일반적으로 일정한 크기 및 조성을 갖는 분말을 이용하여 산화인듐주석 성형체를 제조한 후, 이 성형체를 소결로에 장입하여 1500℃이상의 고온으로 소결시킴으로써 제조된다.In order to form a high quality indium tin oxide thin film by the sputtering deposition method, a high density indium tin oxide target is required, and such a high density indium tin oxide target is generally prepared by forming an indium tin oxide molded body using a powder having a constant size and composition. It is produced by charging the molded body into a sintering furnace and sintering at a high temperature of 1500 ° C or higher.
여기서, 소결로는 1500℃이상의 고온의 열을 발생시키기 위한 MoSi2 발열체를 포함하여 이루어진다.Here, the sintering furnace comprises a MoSi 2 heating element for generating high temperature heat of 1500 ° C or more.
MoSi2는 높은 열전도도, 낮은 열팽창계수, 높은 융점, 및 내산화성이 우수하여 전기를 열원으로 하는 각종 전기로의 발열체의 재료로서 광범위하게 사용되고 있다.MoSi 2 is widely used as a material for heating elements of various electric furnaces using electricity as a heat source because of its high thermal conductivity, low coefficient of thermal expansion, high melting point, and excellent oxidation resistance.
이와 같은, MoSi2 발열체는 표면에 SiO2 피막이 형성되어있으며, 전력을 인가할 경우 저항에 의하여 발열된다. SiO2 피막은 MoSi2 성분 중 Si와 O2와의 산화 반응에 의하여 형성되고, 이 피막은 산소 분위기에서 Mo가 산소와 반응하여 휘발하는 것을 방지한다. As described above, the MoSi 2 heating element has a SiO 2 film formed on its surface, and is heated by a resistance when electric power is applied. The SiO 2 film is formed by an oxidation reaction between Si and O 2 in the MoSi 2 component, and the film prevents Mo from reacting with oxygen in an oxygen atmosphere to volatilize.
하지만, 산소 분위기에서 소결되어 제조되는 산화인듐주석 타겟의 생산에 있어서 MoSi2 발열체를 사용할 경우 산화인듐주석 타겟 생산을 위한 승온 및 냉각 과정이 반복됨에 따라 도 1에 나타난 바와 같이, SiO2 피막의 벗겨짐 현상이 발생하게 되고, 이에 따라 Mo가 산화반응을 일으켜 산화인듐주석 타겟의 표면으로 흡착되어 산화인듐주석 타겟의 휨 및 밀도저하 현상을 야기하는 문제가 발생한다.
However, when the MoSi 2 heating element is used in the production of the indium tin oxide target prepared by sintering in an oxygen atmosphere, the SiO 2 film is peeled off as shown in FIG. 1 as the heating and cooling processes for producing the indium tin oxide target are repeated. A phenomenon occurs, and thus, Mo causes an oxidation reaction to be adsorbed onto the surface of the indium tin oxide target, thereby causing a warpage and a decrease in density of the indium tin oxide target.
본 발명은 상술한 바와 같은 종래기술의 문제점을 해결하기 위해 안출된 것으로서, 본 발명의 목적은 MoSi2 발열체의 표면에 형성된 SiO2 피막의 벗겨짐 현상을 억제할 수 있는 MoSi2 발열체 제조방법 및 이에 의해 제조된 MoSi2 발열체를 포함하는 노를 제공하는 것이다.
The present invention is conceived to solve the problems of the prior art as described above, an object of the present invention is MoSi 2 heating element that can suppress the peeling phenomenon of the SiO 2 film formed on the surface of the MoSi 2 heating element manufacturing method and thereby It is to provide a furnace comprising a prepared MoSi 2 heating element.
이를 위해, 본 발명은 MoSi2를 열처리하는 제 1 열처리 단계; 상기 제 1 열처리에 의해 MoSi2의 표면에 형성된 피막을 제거하는 피막 제거 단계; 및 상기 피막이 제거된 MoSi2를 열처리하는 제 2 열처리 단계;를 포함하는 것을 특징으로 하는 MoSi2 발열체 제조방법을 제공한다.To this end, the present invention comprises a first heat treatment step of heat-treating MoSi 2 ; A film removing step of removing the film formed on the surface of MoSi 2 by the first heat treatment; And a second heat treatment step of heat-treating the MoSi 2 with the coating removed; provides a MoSi 2 heating element manufacturing method comprising: a.
여기서, 상기 제 2 열처리 단계는 24시간 동안 이루어질 수 있으며, 또한 상기 제 2 열처리 단계는 MoSi2를 1600℃까지 가열한 후 냉각하며 이루어질 수 있다.Here, the second heat treatment step may be performed for 24 hours, and the second heat treatment step may be performed by heating MoSi 2 to 1600 ° C. and then cooling it.
그리고, 상기 제 1 열처리 단계는 MoSi2를 1600℃에서 10 ~ 60초 동안 열처리하며 이루어질 수 있다.The first heat treatment step may be performed by heat-treating MoSi 2 at 1600 ° C. for 10 to 60 seconds.
또한, 상기 제 1 열처리 단계 및 제 2 열처리 단계는 각각 대기 또는 산소 분위기에서 이루어질 수 있다.In addition, the first heat treatment step and the second heat treatment step may be performed in the atmosphere or oxygen atmosphere, respectively.
그리고, 상기 피막 제거 단계는 MoSi2에 형성된 피막을 비드(bead) 처리함으로써 이루어질 수 있다.The film removing step may be performed by beading a film formed on MoSi 2 .
또한, 상기 제 1 열처리 단계 및 상기 피막 제거 단계는 순차적으로 복수 회에 걸쳐 진행될 수 있다.In addition, the first heat treatment step and the film removing step may be sequentially performed a plurality of times.
또한, 본 발명은 상술한 MoSi2 발열체 제조방법에 의해 제조된 MoSi2 발열체를 포함하는 것을 특징으로 하는 노(furnace)를 제공한다.
In addition, the present invention provides a furnace (furnace) characterized in that it comprises a MoSi 2 heating element produced by the above-described method for producing MoSi 2 heating element.
본 발명에 따르면, MoSi2 발열체의 표면에 안정적인 SiO2 피막을 형성시킬 수 있다.According to the present invention, a stable SiO 2 film can be formed on the surface of the MoSi 2 heating element.
또한, 본 발명에 따른 MoSi2 발열체를 이용하여 산화인듐주석 타겟을 제조함으로써, 산화인듐주석의 소결 과정 중 MoSi2 표면에 형성된 SiO2 피막이 벗겨지는 것을 억제하여 산화인듐주석 타겟의 표면에 Mo가 흡착되는 것을 방지하고 이에 의해 휨이 없고, 고밀도를 갖는 산화인듐주석 타겟을 제조할 수 있다.
In addition, by manufacturing the indium tin oxide target by using the MoSi 2 heating element according to the present invention, Mo 2 adsorbed on the surface of the indium tin oxide target by suppressing peeling of the SiO 2 film formed on the surface of MoSi 2 during the sintering process of indium tin oxide. It is possible to produce an indium tin oxide target having no high warpage and thereby having a high density.
도 1은 종래 MoSi2 발열체 표면에 형성된 SiO2 피막의 벗겨짐을 나타낸 사진.
도 2는 본 발명의 일 실시예에 따른 MoSi2 발열체 제조방법의 개략적인 흐름도.
도 3은 본 발명의 제 1 열처리 단계에 의해 MoSi2 표면에 형성된 SiO2 피막을 나타낸 사진.
도 4는 본 발명의 피막 제거 단계에 의해 MoSi2 표면에 형성된 SiO2 피막을 제거한 사진.
도 5는 본 발명의 제 2 열처리 단계에 의해 MoSi2 표면에 형성된 SiO2 피막을 나타낸 사진.1 is a photograph showing peeling of a SiO 2 film formed on the surface of a conventional MoSi 2 heating element.
2 is a schematic flowchart of a method of manufacturing a MoSi 2 heating element according to an embodiment of the present invention.
Figure 3 is a photograph showing a SiO 2 film formed on the surface of MoSi 2 by the first heat treatment step of the present invention.
Figure 4 is a photograph of the SiO 2 film formed on the surface of MoSi 2 by the film removal step of the present invention.
5 is a photograph showing a SiO 2 film formed on the surface of MoSi 2 by the second heat treatment step of the present invention.
이하에서는 첨부된 도면들을 참조하여 본 발명의 실시 예에 따른 MoSi2 발열체 제조방법 및 이에 의해 제조된 MoSi2 발열체를 포함하는 노에 대해 상세히 설명한다.Hereinafter, it will be explained in detail in the furnace containing MoSi 2 heating element manufacturing method according to an embodiment of the invention with reference to the accompanying drawings, and thus the MoSi 2 heating element manufactured by.
아울러, 본 발명을 설명함에 있어서, 관련된 공지 기능 혹은 구성에 대한 구체적인 설명이 본 발명의 요지를 불필요하게 흐릴 수 있다고 판단된 경우 그 상세한 설명은 생략한다.
In addition, in describing the present invention, when it is determined that a detailed description of a related known function or configuration may unnecessarily obscure the subject matter of the present invention, the detailed description thereof will be omitted.
도 2는 본 발명의 일 실시예에 따른 MoSi2 발열체 제조방법의 개략적인 흐름도이다.2 is a schematic flowchart of a method of manufacturing a MoSi 2 heating element according to an embodiment of the present invention.
도 2를 참조하면, 본 발명에 따른 MoSi2 발열체 제조방법은 제 1 열처리 단계, 피막 제거 단계, 및 제 2 열처리 단계를 포함하여 이루어질 수 있다.Referring to FIG. 2, the method of manufacturing MoSi 2 heating element according to the present invention may include a first heat treatment step, a film removing step, and a second heat treatment step.
MoSi2 발열체를 제조하기 위해 우선, MoSi2를 열처리한다(S100).In order to manufacture the MoSi 2 heating element, first, MoSi 2 is heat-treated (S100).
열처리는 대기 또는 산소 분위기에서 이루어질 수 있으며, 바람직하게는 산소 분위기에서 이루어질 것이다.The heat treatment may be in an atmospheric or oxygen atmosphere, preferably in an oxygen atmosphere.
그리고, 열처리는 MoSi2에 10 ~ 60초 동안 1600℃의 열을 가함으로써 이루어질 수 있다.The heat treatment may be performed by applying heat of 1600 ° C. to MoSi 2 for 10 to 60 seconds.
MoSi2를 열처리함에 따라 MoSi2의 Si와 O2가 산화 반응하여 MoSi2의 표면에 도 3에 나타난 바와 같은 SiO2 피막이 형성된다. SiO2 피막은 산소 분위기에서 Mo가 산소와 반응하여 휘발하는 것을 방지하는 역할을 수행한다.SiO 2 film as the Si and O 2 of the MoSi 2 shown in Figure 3 to the surface of the MoSi 2 and the oxidation reaction is formed as the heat-treating the MoSi 2. The SiO 2 film serves to prevent Mo from reacting with oxygen in the oxygen atmosphere.
그러나, 이와 같은 제 1 열처리 단계에 의해 형성된 SiO2 피막에는 MoSi2 의 제조 공정에서 사용되게 되는 알칼리 성분이 불가피하게 포함되게 되며, 이 알칼리 성분은 SiO2 피막의 안정성을 떨어뜨리게 되어 MoSi2의 승온 및 냉각이 반복되게 되면 MoSi2 표면에 형성된 SiO2 피막이 쉽게 벗겨진다.
However, the SiO 2 film formed by the first heat treatment step inevitably includes an alkali component to be used in the manufacturing process of MoSi 2 , and this alkali component degrades the stability of the SiO 2 film and increases the temperature of MoSi 2 . And if the cooling is repeated, the SiO 2 film formed on the surface of MoSi 2 is easily peeled off.
이후, 열처리에 의해 MoSi2 표면에 형성된 SiO2 피막을 도 4에 나타난 바와 같이 제거한다(S200).Thereafter, the SiO 2 film formed on the surface of MoSi 2 by heat treatment is removed as shown in FIG. 4 (S200).
SiO2 피막의 제거는 비드(bead) 처리 등을 다양한 방법에 의해 이루어질 수 있다.
Removal of the SiO 2 film may be performed by various methods such as bead treatment.
마지막으로, SiO2 피막이 제거된 MoSi2를 다시 열처리(S300)하여 도 5에 나타난 바와 같이 MoSi2 표면에 SiO2 피막을 다시 형성시킴으로써 MoSi2 발열체를 제조할 수 있다.Finally, the MoSi 2 heating element can be manufactured by re-heating MoSi 2 from which the SiO 2 film has been removed (S300) to form the SiO 2 film again on the MoSi 2 surface as shown in FIG. 5.
열처리는 대기 또는 산소 분위기에서 이루어질 수 있으며, 바람직하게는 산소 분위기에서 이루어질 것이다.The heat treatment may be in an atmospheric or oxygen atmosphere, preferably in an oxygen atmosphere.
그리고, 열처리 단계는 24시간 동안 이루어질 수 있으며, MoSi2를 1600℃까지 가열한 후 냉각하며 이루어질 수 있다.The heat treatment step may be performed for 24 hours, and may be performed by heating MoSi 2 to 1600 ° C. and then cooling it.
이와 같이 제 1 열처리 단계에 의해 MoSi2 표면에 형성된 SiO2 피막을 제거한 후, 제 2 열처리 과정을 통해 다시 MoSi2 표면에 SiO2 피막을 형성함으로써, MoSi2 표면에 안정적인 SiO2 피막을 형성시킬 수 있다.Thus, after removing the SiO 2 film formed on the MoSi 2 surface by a first heat treatment step, a second by forming a SiO 2 film on the MoSi 2 surface back through the heat treatment, to form a stable SiO 2 film on the MoSi 2 surface have.
즉, 제 1 열처리 단계에 의해 형성된 SiO2 피막은 상술한 바와 같이 알칼리 성분을 포함하고 있어 안정성이 떨어지므로, 이와 같이 알칼리 성분이 포함된 SiO2 피막을 강제적으로 제거한 후, 다시 열처리함으로써 MoSi2 표면에 알칼리 성분이 포함되지 않은 안정적인 SiO2 피막을 형성시킬 수 있다.
That is, since the SiO 2 film formed by the first heat treatment step contains the alkali component as described above and the stability thereof is poor, the SiO 2 film containing the alkaline component is forcibly removed and then heat treated again, thereby increasing the surface of MoSi 2. It is possible to form a stable SiO 2 film that does not contain an alkali component.
또한, 본 발명에 따른 MoSi2 발열체 제조방법은 MoSi2 표면에 보다 치밀화된 안정적인 SiO2 피막을 형성시키기 위해 제 1 열처리 단계(S100) 및 피막 제거 단계(S200)를 순차적으로 복수 회에 걸쳐 진행할 수도 있을 것이다.
In addition, the method for manufacturing a MoSi 2 heating element according to the present invention may proceed sequentially a plurality of times of the first heat treatment step (S100) and the film removal step (S200) to form a more compact and stable SiO 2 film on the surface of MoSi 2. There will be.
또한, 상술한 MoSi2 발열체 제조방법에 의해 제조된 MoSi2 발열체를 포함하는 소결용 로에 산화인듐주석 성형체를 장입한 후 소결시킴으로써, 산화인듐주석의 소결 과정 중 MoSi2 표면에 형성된 SiO2 피막이 벗겨지는 것을 억제하여 산화인듐주석 타겟의 표면에 Mo가 흡착되는 것을 방지하고 이에 의해 휨이 없고, 고밀도를 갖는 산화인듐주석 타겟을 제조할 수 있다.
In addition, by inserting the indium tin oxide molded body into the sintering furnace containing the MoSi 2 heating element produced by the above-described MoSi 2 heating element manufacturing method and sintering, the SiO 2 film formed on the surface of MoSi 2 during the sintering process of the indium tin oxide is peeled off. This can prevent Mo from adsorbing to the surface of the indium tin oxide target, thereby producing an indium tin oxide target having no high warpage and having a high density.
이상과 같이 본 발명은 비록 한정된 실시 예와 도면에 의해 설명되었으나, 본 발명은 상기의 실시 예에 한정되는 것은 아니며, 본 발명이 속하는 분야에서 통상의 지식을 가진 자라면 이러한 기재로부터 다양한 수정 및 변형이 가능하다.While the invention has been shown and described with reference to certain preferred embodiments thereof, it will be understood by those of ordinary skill in the art that various changes in form and details may be made therein without departing from the spirit and scope of the invention as defined by the appended claims. This is possible.
그러므로 본 발명의 범위는 설명된 실시 예에 국한되어 정해져서는 아니 되며, 후술하는 특허청구범위뿐만 아니라 특허청구범위와 균등한 것들에 의해 정해져야 한다.
Therefore, the scope of the present invention should not be limited by the described embodiments, but should be determined by the scope of the appended claims as well as the appended claims.
Claims (8)
상기 제 1 열처리에 의해 MoSi2의 표면에 형성된 피막을 제거하는 피막 제거 단계; 및
상기 피막이 제거된 MoSi2를 열처리하는 제 2 열처리 단계;를 포함하고,
상기 제 1 열처리 단계는 MoSi2를 1600℃에서 10 ~ 60초 동안 열처리하는 것을 특징으로 하는 MoSi2 발열체 제조방법.
A first heat treatment step of heat-treating MoSi 2 ;
A film removing step of removing the film formed on the surface of MoSi 2 by the first heat treatment; And
And a second heat treatment step of heat-treating the MoSi 2 from which the film has been removed.
The first heat treatment step is MoSi 2 heating element manufacturing method characterized in that the heat treatment for MoSi 2 for 10 to 60 seconds at 1600 ℃.
상기 제 2 열처리 단계는 24시간 동안 이루어지는 것을 특징으로 하는 MoSi2 발열체 제조방법.
The method of claim 1,
The second heat treatment step is MoSi 2 heating element manufacturing method characterized in that it is made for 24 hours.
상기 제 2 열처리 단계는 MoSi2를 1600℃까지 가열한 후 냉각하며 이루어지는 것을 특징으로 하는 MoSi2 발열체 제조방법.
The method of claim 1,
The second heat treatment step is a MoSi 2 heating element manufacturing method characterized in that the cooling is performed after heating MoSi 2 to 1600 ℃.
상기 제 1 열처리 단계는 대기 또는 산소 분위기에서 이루어지고,
상기 제 2 열처리 단계는 대기 또는 산소 분위기에서 이루어지는 것을 특징으로 하는 MoSi2 발열체 제조방법.
The method of claim 1,
The first heat treatment step is performed in the atmosphere or oxygen atmosphere,
The second heat treatment step is MoSi 2 heating element manufacturing method characterized in that made in the atmosphere or oxygen atmosphere.
상기 피막 제거 단계는 MoSi2에 형성된 피막을 비드(bead) 처리함으로써 이루어지는 것을 특징으로 하는 MoSi2 발열체 제조방법.
The method of claim 1,
It said film removal step is MoSi 2 heating element manufacturing method which comprises by treating the film formed on the MoSi 2 beads (bead).
상기 제 1 열처리 단계 및 상기 피막 제거 단계는 순차적으로 복수 회에 걸쳐 진행되는 것을 특징으로 하는 MoSi2 발열체 제조방법.
The method of claim 1,
The first heat treatment step and the film removal step is MoSi 2 heating element manufacturing method characterized in that proceeds sequentially a plurality of times.
Furnace characterized in that it comprises a MoSi 2 heating element produced by the MoSi 2 heating element manufacturing method of any one of claims 1 to 3.
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