JPH0325960A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPH0325960A JPH0325960A JP16154089A JP16154089A JPH0325960A JP H0325960 A JPH0325960 A JP H0325960A JP 16154089 A JP16154089 A JP 16154089A JP 16154089 A JP16154089 A JP 16154089A JP H0325960 A JPH0325960 A JP H0325960A
- Authority
- JP
- Japan
- Prior art keywords
- package
- thin film
- plastic
- conductive thin
- leads
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 7
- 239000010409 thin film Substances 0.000 claims abstract description 11
- 230000006378 damage Effects 0.000 abstract description 5
- 238000007689 inspection Methods 0.000 abstract description 5
- 230000005611 electricity Effects 0.000 abstract description 3
- 230000003068 static effect Effects 0.000 abstract description 3
- 230000015556 catabolic process Effects 0.000 abstract 2
- 239000000463 material Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000003449 preventive effect Effects 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、半導体装置に関し、特にプラスティックパッ
ケージの表面構造の改良に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to semiconductor devices, and particularly to improvement of the surface structure of plastic packages.
従来、この種のプラスティックパッケージは、第４図の
斜視図に示される様にその内部から表面に致るまで同一
の材質、すなわちプラスティックで構成されていた。Conventionally, this type of plastic package has been made of the same material from the inside to the surface, that is, plastic, as shown in the perspective view of FIG.
（発明が解決しようとする課題〕
上述した従来のプラスティックパッケージは帯電し易い
材質であり、その内部から表面に致るまで同一材料で楕
戒されていた。従って、例えば高温電気検査時に吹きが
ける熱風とパッケージとの摩擦によって生じた静電気が
帯電し半導体素子に対しゲート破壊，ジャンクション破
壊等のダメージを与えるという欠点がある。(Problems to be Solved by the Invention) The conventional plastic package described above is made of a material that is easily charged, and is made of the same material from the inside to the surface.Therefore, for example, when spraying during high temperature electrical inspection, The drawback is that static electricity generated by friction between the hot air and the package is charged and causes damage to semiconductor devices, such as gate destruction and junction destruction.
本発明によるプラスティックパッケージは、パッケージ
のリードに接触していない表面の一部に導電性の薄膜を
有しており、薄膜をグランドに落すことで、薄膜を通し
て静電気が逃げることにより内部半導体素子を保護する
ことができる。The plastic package according to the present invention has a conductive thin film on a part of the surface not in contact with the package leads, and by dropping the thin film to ground, static electricity escapes through the thin film, protecting the internal semiconductor elements. can do.
次に、本発明について図面を参照して説明する，
第１図は本発明の第１の実施例を示すＤＩＰ型のプラス
ティックパッケージの斜視図である。本実施例では、プ
ラスティックバッゲージの表面に導電性の薄膜２が形成
されている。図において、１はプラスティック部、−３
はリード部である。Next, the present invention will be described with reference to the drawings. FIG. 1 is a perspective view of a DIP type plastic package showing a first embodiment of the present invention. In this embodiment, a conductive thin film 2 is formed on the surface of a plastic baggage. In the figure, 1 is the plastic part, -3
is the lead part.
第２図は半導体装置の電気的検査時の縦断面図である。FIG. 2 is a longitudinal sectional view of the semiconductor device during electrical inspection.
第２図に示されるように例えばオートハンドラの導電性
プッシュロッド４をＧＮＤと接続しておけば、プラステ
ィックパッケージ８に帯電したチャージ６を導電薄膜２
→プッシュロツド４→ＧＮＤと逃がすことができる。For example, if the conductive push rod 4 of the autohandler is connected to GND as shown in FIG.
→ Push rod 4 → GND.
第３図は本発明の第２の実施例の縦断面図である。本実
施例では上方にリード戒形されたフラットパッケージ８
の電気的検査時の様子を示す。FIG. 3 is a longitudinal sectional view of a second embodiment of the invention. In this embodiment, the flat package 8 is lead-shaped upward.
This shows the state during electrical inspection.
以上説明したように本発明では、プラスティックパッケ
ージのリードに接触していない表面の一部に導電性の薄
膜を設けることにより、この薄膜を通して帯電したチャ
ージを逃がすことにより内部素子の静電破壊等を防止で
きる効果がある。As explained above, in the present invention, by providing a conductive thin film on a part of the surface of the plastic package that is not in contact with the leads, the electrical charges can be released through this thin film, thereby preventing electrostatic damage to internal elements. It has a preventive effect.
１の実施例の電気的検査時の様子を示す縦断面図、第３
図は本発明の第２の実施例の縦断面図、第４図は従来の
ＤＩＰ型プラスティックパッケージの斜視図である．
１・・・プラスティック部、２・・・導電性薄膜部、３
・・・リード部、４・・・オートハンドラのプッシュロ
ッド、５・・・ソケット、６・・・帯電したチャージ、
７・・・フラットパッケージのリード部、８・・・パッ
ケージ。3 is a vertical sectional view showing the state of the electrical inspection of the first embodiment; FIG.
The figure is a longitudinal sectional view of the second embodiment of the present invention, and FIG. 4 is a perspective view of a conventional DIP type plastic package. 1... Plastic part, 2... Conductive thin film part, 3
...Lead part, 4...Auto handler push rod, 5...Socket, 6...Electrically charged charge,
7...Lead part of flat package, 8...Package.
Claims (1)
ドに接触していない表面の一部に導電性の薄膜を有する
ことを特徴とする半導体装置。A semiconductor device package comprising a conductive thin film on a part of the surface of the package that is not in contact with the leads.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16154089A JPH0325960A (en) | 1989-06-23 | 1989-06-23 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16154089A JPH0325960A (en) | 1989-06-23 | 1989-06-23 | Semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0325960A true JPH0325960A (en) | 1991-02-04 |
Family
ID=15737044
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP16154089A Pending JPH0325960A (en) | 1989-06-23 | 1989-06-23 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0325960A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100761861B1 (en) * | 2006-10-11 | 2007-09-28 | 삼성전자주식회사 | Semiconductor package preventing the static electricity |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60247951A (en) * | 1984-05-23 | 1985-12-07 | Seiko Epson Corp | Plastic-package semiconductor device |
-
1989
- 1989-06-23 JP JP16154089A patent/JPH0325960A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60247951A (en) * | 1984-05-23 | 1985-12-07 | Seiko Epson Corp | Plastic-package semiconductor device |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100761861B1 (en) * | 2006-10-11 | 2007-09-28 | 삼성전자주식회사 | Semiconductor package preventing the static electricity |
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