JPH03259549A - Semiconductor integrated circuit - Google Patents

Semiconductor integrated circuit

Info

Publication number
JPH03259549A
JPH03259549A JP5840890A JP5840890A JPH03259549A JP H03259549 A JPH03259549 A JP H03259549A JP 5840890 A JP5840890 A JP 5840890A JP 5840890 A JP5840890 A JP 5840890A JP H03259549 A JPH03259549 A JP H03259549A
Authority
JP
Japan
Prior art keywords
cell
layout
feed
wiring
logic circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP5840890A
Other languages
Japanese (ja)
Inventor
Satoru Kumaki
哲 熊木
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP5840890A priority Critical patent/JPH03259549A/en
Publication of JPH03259549A publication Critical patent/JPH03259549A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To minimize the alteration in layout when a logic circuit is additionally required after finishing the layout by a method wherein the logic circuit built-in a passage cell is substituted for the logic circuit additionally required after finishing the layout. CONSTITUTION:Within a plan illustration displaying a feed-through cell in a semiconductor integrated circuit designed in cell base mode, the cell lines not adjacent to one another can be connected by wiring Al wirings 5a, 5b for connecting the second layer wirings to the upper layer of the feed-through cell 20 without electrically connecting power supply lines 2 and GND lines 3 of the first layer wiring. Through these procedures, a spare inverter is formed in the feed-through cell 20. On the other hand, when a logic circuit is additionally required after finishing a layout by an automatic arrangement wiring, the spare inverter formed in the feed-through cell 20 is to be used. Accordingly, any inverter in high application frequency can be additionally required without the alteration in the layout.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 この発明は論理機能を有する複数のスタンダードセルを
配置配線することにより形成される半導体集積回路に関
するものである。
DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a semiconductor integrated circuit formed by arranging and wiring a plurality of standard cells having logical functions.

〔従来の技術〕[Conventional technology]

第3図は、論理機能を有する複数のスタンダードルを配
置配線するセルベース方式で設計された従来の半導体集
積回路における、隣接しないセル列の結線用に設けられ
る通過用セル(フィードスルーセル)10を示す平面図
である。同図に示すように、セル枠1内には第1層配線
の電源線2とGND線3か列方向に延びており、電源線
2間2GND線3間のトランジスタ形成領域4には何も
形成されていない。
FIG. 3 shows a feed-through cell 10 provided for connecting non-adjacent cell rows in a conventional semiconductor integrated circuit designed using a cell-based method in which a plurality of standards having logical functions are placed and routed. FIG. As shown in the figure, within the cell frame 1, power supply lines 2 and GND lines 3 of the first layer wiring extend in the column direction, and there is nothing in the transistor formation region 4 between the power supply lines 2 and 2 and the GND lines 3. Not formed.

このような構成のフィードスルーセル10の上層に、第
1層配線の電源線2及びGND線3と電気的に接続され
ることなく、第2層配線の結線用のAI配線5を列方向
と垂直方向に配線することができる。したがって、第4
図に示すように、セル列8に形成されたフィードスルー
セル10を介して、隣接しないセル列6.7間の結線を
A2配線5により行うことができる。
In the upper layer of the feed-through cell 10 having such a configuration, an AI wiring 5 for connecting the second layer wiring is connected in the column direction without being electrically connected to the power supply line 2 and the GND line 3 of the first layer wiring. Can be wired vertically. Therefore, the fourth
As shown in the figure, connection between non-adjacent cell rows 6 and 7 can be made by A2 wiring 5 through feed-through cells 10 formed in cell row 8.

〔発明が解決しようとする課題〕[Problem to be solved by the invention]

しかしながら、従来のセルベース方式で設計された半導
体集積回路では、自動配置配線によりレイアウトが終了
した後に、論理回路追加の必要が生じた場合、配置変更
することにより論理回路を追加するとともに、これに伴
い配線も変更するという大幅なレイアウト変更を行わな
ければならないという問題点があった。
However, in semiconductor integrated circuits designed using the conventional cell-based method, if it becomes necessary to add logic circuits after the layout has been completed using automatic placement and routing, the logic circuits can be added by changing the layout, and There was a problem in that the wiring had to be changed as well, which required a major layout change.

この発明は上記のような問題点を解決するためになされ
たもので、レイアウト終了後に論理回路の追加の必要が
生じた場合のレイアウトの変更を最小限に抑えることが
できるセルベース方式の半導体集積回路を得ることを目
的とする。
This invention was made to solve the above-mentioned problems, and it provides a cell-based semiconductor integrated system that can minimize layout changes when it becomes necessary to add logic circuits after layout is completed. The purpose is to obtain a circuit.

〔課題を解決するための手段〕[Means to solve the problem]

この発明にかかる半導体集積向は、論理機能を有する複
数のスタンダードセルを配置配線することにより形成さ
れており、隣接しないセル列の結線に用いる通過用セル
中に、予備の論理回路を内蔵している。
The semiconductor integration device according to the present invention is formed by arranging and wiring a plurality of standard cells each having a logic function, and a spare logic circuit is built into a passing cell used for connecting non-adjacent cell rows. There is.

〔作用〕[Effect]

この発明においては、隣接しないセル列の結線に用いる
通過用セル中に、予備の論理回路を内蔵しているため、
レイアウト終了後に追加を必要とする論理回路が、通過
用セル中に内蔵された論理回路であればそれを利用する
ことができる。
In this invention, since a spare logic circuit is built into the pass-through cell used for connecting non-adjacent cell columns,
If the logic circuit that needs to be added after the layout is completed is a logic circuit built into the pass-through cell, it can be used.

〔実施例〕〔Example〕

第1図はこの発明の一実施例であるセルベース方式で設
計された半導体集積回路における、フィードスルーセル
20を示す平面図である。同図に示すように、セル枠1
内において第1層配線の電源線2とGND線3が列方向
に延びるとともに、電源線2間、GND線3間のトラン
ジスタ形成領域4にはP゛拡散領域11、N゛拡散領域
12及びポリシリコンゲゲート電極層13ならびに第1
層配線より成る人力線14及び出力線15を形成し、こ
れらの領域11.12.13と入力線14及び出力線1
5とをコンタクトホール16を介して電気的に接続する
ことにより、利用頻度の高いインバータを構成している
。しかしながら、この形成状態では人力線14を電源線
2に接続して人力レベルを固定し、出力線を15をフロ
ーティングにしており、インバータ本来の働きを機能さ
せておらず、トランジスタ形成領域4には何も形成され
ていない従来のフィードスルーセル10と等価である。
FIG. 1 is a plan view showing a feed-through cell 20 in a semiconductor integrated circuit designed using a cell-based method, which is an embodiment of the present invention. As shown in the figure, cell frame 1
The power supply line 2 and the GND line 3 of the first layer wiring extend in the column direction, and the transistor formation region 4 between the power supply line 2 and the GND line 3 includes a P' diffusion region 11, a N' diffusion region 12, and a polygon. The silicon gate electrode layer 13 and the first
A power line 14 and an output line 15 consisting of layer wiring are formed, and these areas 11, 12, 13, input line 14 and output line 1 are connected to each other.
5 through the contact hole 16, a frequently used inverter is constructed. However, in this formation state, the human power line 14 is connected to the power supply line 2 to fix the human power level, and the output line 15 is floating, so the inverter does not perform its original function and the transistor forming area 4 is This is equivalent to the conventional feed-through cell 10 in which nothing is formed.

したがって、この形成状態のフィードスルーセル20の
上層に、第1層配線の電源線2及びGND線3と電気的
に接続されることなく、第2層配線の結線用のAfI配
線5a、5bを配線することにより、従来同様、隣接し
ないセル列間の結線を行うことができる。このようにし
て、フィールドスルーセル20中に予備のインバータを
形成しておく。
Therefore, in the upper layer of the feed-through cell 20 in this formed state, AfI wirings 5a and 5b for connection of the second layer wiring are placed without being electrically connected to the power supply line 2 and the GND line 3 of the first layer wiring. By wiring, it is possible to connect non-adjacent cell columns as in the conventional case. In this way, a spare inverter is formed in the field through cell 20.

一方、自動配置配線によりレイアウトが終了した後に、
論理回路追加の必要が生じた場合、その論理回路がイン
バータてあれば、フィールドスルーセル20中に形成さ
れた予備のインバータを使用する。すなわち、第2図に
示すように、人力線14の一部を切断して人力線14と
電源線2及びP1拡散領域11との間を遮断し、かつコ
ンタクトホール17を介して人力線14とA1配線5a
、出力[15とAf1配置装[5b間をそれぞれ電気的
に接続することにより、A1配線5aをインバータ入力
線、A1配線5bをインバータ出力線とした本来のイン
バータがフィードスルーセル2o内に構成できる。
On the other hand, after the layout is completed by automatic placement and routing,
When it becomes necessary to add a logic circuit, if the logic circuit has an inverter, the spare inverter formed in the field-through cell 20 is used. That is, as shown in FIG. A1 wiring 5a
By electrically connecting the output [15 and the Af1 arrangement device [5b], an original inverter can be configured in the feed-through cell 2o, with the A1 wiring 5a as the inverter input line and the A1 wiring 5b as the inverter output line. .

つまり、レイアウト終了後インバータを追加形成する場
合は、配置変更することなく、フィードスルーセル20
に配線切断処理とコンタクトホール形成処理という簡単
な配線変更処理を施す程度でよい。したがって、レイア
ウト終了後に利用頻度の高いインバータの追加要求があ
ってもレイアウト変更をはとんと行うことなく、インバ
ータを追加することができる。
In other words, when additional inverters are formed after the layout is completed, the feed-through cells 20 can be formed without changing the layout.
It is only necessary to perform a simple wiring change process such as a wiring cutting process and a contact hole forming process. Therefore, even if there is a request to add a frequently used inverter after the layout is completed, the inverter can be added without suddenly changing the layout.

なお、この実施例ではフィードスルーセル20内にイン
バータを内蔵したが、これに限らず、NAND回路、O
R回路等の他の論理回路を内蔵しても良い。
In this embodiment, an inverter is built in the feedthrough cell 20, but the inverter is not limited to this, and it can also be used for a NAND circuit, an O
Other logic circuits such as an R circuit may also be incorporated.

〔発明の効果〕〔Effect of the invention〕

以上説明したように、この発明によれば、隣接しないセ
ル列の結線に用いる通過用セル中に、予備の論理回路を
内蔵しているため、レイアウト終了後に追加を必要とす
る論理回路が、通過用セル中に内蔵された論理回路てあ
ればそれを利用することができる。、 したがって、通過用セル中に利用頻度の高い論理回路を
内蔵しておけば、レイアウト終了後に論理回路の追加の
必要が生した場合のレイアウトの変更を最小限に抑える
ことができる効果がある。
As explained above, according to the present invention, spare logic circuits are built into the pass-through cells used to connect non-adjacent cell rows, so logic circuits that need to be added after the layout is completed can be added to the pass-through cells. If there is a logic circuit built into the cell, it can be used. Therefore, by incorporating frequently used logic circuits in the pass-through cells, it is possible to minimize layout changes when it becomes necessary to add logic circuits after the layout is completed.

【図面の簡単な説明】[Brief explanation of drawings]

第1図及び第2図はほこの発明の一実施例である半導体
集積回路のフィードスルーセルを示す平面図、第3図は
従来の半導体集積回路のフィードスルーセルを示す平面
図、第4図はフィードスルーセルの働きを示した説明図
である。 図において、4はトランジスタ形成領域、5a。 5bはA(配線、11はP+拡散領域、12はN“拡散
領域、13はポリシリコンゲート電極層、14は人力線
、15は出力線、16及び17はコンタクトホールであ
る。 なお、各図中同一符号は同一または相当部分を示す。
1 and 2 are plan views showing a feed-through cell of a semiconductor integrated circuit which is an embodiment of Hoko's invention, FIG. 3 is a plan view showing a feed-through cell of a conventional semiconductor integrated circuit, and FIG. 4 is a plan view showing a feed-through cell of a conventional semiconductor integrated circuit. FIG. 2 is an explanatory diagram showing the function of a feed-through cell. In the figure, reference numeral 4 indicates a transistor formation region, and 5a. 5b is A (wiring, 11 is a P+ diffusion region, 12 is an N" diffusion region, 13 is a polysilicon gate electrode layer, 14 is a human power line, 15 is an output line, and 16 and 17 are contact holes. The same reference numerals in the middle indicate the same or corresponding parts.

Claims (1)

【特許請求の範囲】[Claims] (1)論理機能を有する複数のスタンダードセルを配置
配線することにより形成される半導体集積回路において
、 隣接しないセル列の結線に用いる通過用セル中に予備の
論理回路を内蔵したことを特徴とする半導体集積回路。
(1) A semiconductor integrated circuit formed by arranging and wiring a plurality of standard cells having a logic function, characterized in that a spare logic circuit is built into a passing cell used for connecting non-adjacent cell rows. Semiconductor integrated circuit.
JP5840890A 1990-03-08 1990-03-08 Semiconductor integrated circuit Pending JPH03259549A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5840890A JPH03259549A (en) 1990-03-08 1990-03-08 Semiconductor integrated circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5840890A JPH03259549A (en) 1990-03-08 1990-03-08 Semiconductor integrated circuit

Publications (1)

Publication Number Publication Date
JPH03259549A true JPH03259549A (en) 1991-11-19

Family

ID=13083540

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5840890A Pending JPH03259549A (en) 1990-03-08 1990-03-08 Semiconductor integrated circuit

Country Status (1)

Country Link
JP (1) JPH03259549A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5869852A (en) * 1997-04-08 1999-02-09 Mitsubishi Denki Kabushiki Kaisha Semiconductor integrated circuit and semiconductor integrated circuit having layout designed by cell base system
US6335640B1 (en) 1997-03-11 2002-01-01 Mitsubishi Denki Kabushiki Kaisha Semiconductor integrated circuit device with its layout designed by the cell base method

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6335640B1 (en) 1997-03-11 2002-01-01 Mitsubishi Denki Kabushiki Kaisha Semiconductor integrated circuit device with its layout designed by the cell base method
US5869852A (en) * 1997-04-08 1999-02-09 Mitsubishi Denki Kabushiki Kaisha Semiconductor integrated circuit and semiconductor integrated circuit having layout designed by cell base system

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