JPH03252386A - 単結晶製造装置 - Google Patents

単結晶製造装置

Info

Publication number
JPH03252386A
JPH03252386A JP2051326A JP5132690A JPH03252386A JP H03252386 A JPH03252386 A JP H03252386A JP 2051326 A JP2051326 A JP 2051326A JP 5132690 A JP5132690 A JP 5132690A JP H03252386 A JPH03252386 A JP H03252386A
Authority
JP
Japan
Prior art keywords
raw material
crucible
single crystal
silicon
column
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2051326A
Other languages
English (en)
Japanese (ja)
Inventor
Yoshio Mori
毛利　吉男
Kenji Araki
健治 荒木
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
JFE Engineering Corp
Original Assignee
NKK Corp
Nippon Kokan Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NKK Corp, Nippon Kokan Ltd filed Critical NKK Corp
Priority to JP2051326A priority Critical patent/JPH03252386A/ja
Priority to DE19914190411 priority patent/DE4190411T1/de
Priority to PCT/JP1991/000273 priority patent/WO1991013192A1/ja
Priority to KR1019910701501A priority patent/KR920701531A/ko
Publication of JPH03252386A publication Critical patent/JPH03252386A/ja
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/02—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Feeding, Discharge, Calcimining, Fusing, And Gas-Generation Devices (AREA)
JP2051326A 1990-03-02 1990-03-02 単結晶製造装置 Pending JPH03252386A (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2051326A JPH03252386A (ja) 1990-03-02 1990-03-02 単結晶製造装置
DE19914190411 DE4190411T1 (en, 2012) 1990-03-02 1991-03-01
PCT/JP1991/000273 WO1991013192A1 (en) 1990-03-02 1991-03-01 Single crystal production apparatus
KR1019910701501A KR920701531A (ko) 1990-03-02 1991-03-01 단결정 제조장치

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2051326A JPH03252386A (ja) 1990-03-02 1990-03-02 単結晶製造装置

Publications (1)

Publication Number Publication Date
JPH03252386A true JPH03252386A (ja) 1991-11-11

Family

ID=12883798

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2051326A Pending JPH03252386A (ja) 1990-03-02 1990-03-02 単結晶製造装置

Country Status (4)

Country Link
JP (1) JPH03252386A (en, 2012)
KR (1) KR920701531A (en, 2012)
DE (1) DE4190411T1 (en, 2012)
WO (1) WO1991013192A1 (en, 2012)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008266017A (ja) * 2007-03-29 2008-11-06 Sharp Corp 固体材料供給装置、固体材料処理装置および固体材料供給方法

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2754104B2 (ja) * 1991-10-15 1998-05-20 信越半導体株式会社 半導体単結晶引上用粒状原料供給装置
US5997234A (en) * 1997-04-29 1999-12-07 Ebara Solar, Inc. Silicon feed system
US10202704B2 (en) 2011-04-20 2019-02-12 Gtat Ip Holding Llc Side feed system for Czochralski growth of silicon ingots
PH12013502172A1 (en) * 2011-04-20 2014-01-13 Gtat Ip Holding Llc Side feed system for czochralski growth of silicon ingots
CN104264229B (zh) * 2014-10-09 2016-08-24 河北晶龙阳光设备有限公司 一种单晶炉在线掺杂装置

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0523580Y2 (en, 2012) * 1987-02-27 1993-06-16
JPH01282194A (ja) * 1988-01-19 1989-11-14 Osaka Titanium Co Ltd 単結晶製造方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008266017A (ja) * 2007-03-29 2008-11-06 Sharp Corp 固体材料供給装置、固体材料処理装置および固体材料供給方法

Also Published As

Publication number Publication date
KR920701531A (ko) 1992-08-12
DE4190411T1 (en, 2012) 1992-05-14
WO1991013192A1 (en) 1991-09-05

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