JPH0324736A - Forming method of semiconductor thin film - Google Patents
Forming method of semiconductor thin filmInfo
- Publication number
- JPH0324736A JPH0324736A JP16048089A JP16048089A JPH0324736A JP H0324736 A JPH0324736 A JP H0324736A JP 16048089 A JP16048089 A JP 16048089A JP 16048089 A JP16048089 A JP 16048089A JP H0324736 A JPH0324736 A JP H0324736A
- Authority
- JP
- Japan
- Prior art keywords
- conductivity type
- amorphous semiconductor
- semiconductor layer
- single crystal
- thin film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 106
- 238000000034 method Methods 0.000 title claims abstract description 24
- 239000010409 thin film Substances 0.000 title claims abstract description 19
- 239000000758 substrate Substances 0.000 claims abstract description 30
- 239000013078 crystal Substances 0.000 claims abstract description 24
- 239000010408 film Substances 0.000 description 16
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 14
- 239000012535 impurity Substances 0.000 description 13
- 238000010438 heat treatment Methods 0.000 description 7
- 239000001257 hydrogen Substances 0.000 description 7
- 229910052739 hydrogen Inorganic materials 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 7
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 6
- 229910052681 coesite Inorganic materials 0.000 description 6
- 229910052906 cristobalite Inorganic materials 0.000 description 6
- 229910052682 stishovite Inorganic materials 0.000 description 6
- 229910052905 tridymite Inorganic materials 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 239000007789 gas Substances 0.000 description 5
- 239000000377 silicon dioxide Substances 0.000 description 5
- 235000012239 silicon dioxide Nutrition 0.000 description 5
- 238000002425 crystallisation Methods 0.000 description 4
- 238000005468 ion implantation Methods 0.000 description 4
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 230000001678 irradiating effect Effects 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 230000008025 crystallization Effects 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 238000002230 thermal chemical vapour deposition Methods 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 239000002202 Polyethylene glycol Substances 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 229920001223 polyethylene glycol Polymers 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 150000003376 silicon Chemical class 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910001415 sodium ion Inorganic materials 0.000 description 1
- 238000009331 sowing Methods 0.000 description 1
- 239000011345 viscous material Substances 0.000 description 1
Landscapes
- Thin Film Transistor (AREA)
- Recrystallisation Techniques (AREA)
Abstract
Description
【発明の詳細な説明】
（産業上の利用分野）
本発明は半導体薄膜の形成方法に関し、特に半導体接合
部を有する単結晶半導体薄膜の形成方法に関する．
（従来の技術及びその問題点）
従来から非晶質半導体層にレーザー光を照射して非晶質
半導体層を溶融一固化させて単結晶化するレーザービー
ム結晶化法がある．このレーザービーム結晶化法を応用
して三次元ＩＣ等を製造する方法も種々提案されている
が、三次元ＩＣを製造する場合基板は必ず単結晶シリコ
ン基板に限られてしまい、大面積化は到底望めないと共
に、半導体層に不純物イオンを拡散する場合イオン注入
法や熱拡散法で行うことから、不純物イオンを広い領域
にわたって均一に拡散させることができなかったり、高
温加熱に耐えられる基板を用いなければならない等技術
上不可、避の問題がある．そこで、このような問題を解
決する方法として例えば特開昭６２−２１４６６８号公
報では一第３図に示すように、基板１１として大面積化
が可能で安価なガラス基板を用い、このガラス基板上に
ＳｉＯ２膜１２等を形成し、このＳｉＯ２膜の所定部分
に後にトランジスタのチャンネル領域を形成する不純物
となるホウ素１２ａとリン１２ｂをイオン注入法等で注
入し、このＳ ｚ ０２ 膜１ ２上にシリコン薄膜１
３を堆積させてシリコン薄膜１３にレーザー光を照射し
て加熱することによりＳ ｉ Ｏ２膜１２中の不純物を
シリコン薄膜１３に熱拡散させてチャンネル領域を形成
して、ガラス基板１１上に逆チャンネル型の薄膜トラン
ジスタ１８、２３等を形成することも提案されている．
ところが、この従来の薄膜トランジスタの製造方法では
、Ｓ ｉ Ｏ２膜１２に予めトランジスタのチャンネル
領域を形成する不純物をイオン注入法等で注入して置か
なければならず、製造工程が煩雑で装置も大掛かりなも
のを用意しなければならないという問題が依然としてあ
る．
（発明の目的〉
本発明はこのような従来方法の問題点に鑑み案出された
ものであり、イオン注入法等の煩雑な工程や大掛かりな
装置を用いずに簡単に形成することができる半導体薄膜
単結晶の形成方法を提供することを目的とするものであ
る．
（発明の構成）
本発明によれば、絶縁基板上に一導電型の非晶質半導体
層を被着形戒して所定部分を工・ソチング除去し、前記
絶縁基板上の一導電型非晶質半導体層を除去した部分に
前記一導電型とは反対の導電型の非晶質半導体層を前記
一導電型非晶質半導体層と接触した状態に被着形成し、
これら非晶質半導体層にレーザー光を照射して溶融・固
化させることにより半導体層を単結晶化すると同時に一
導電型半導体単結晶と他の導電型半導体単結晶とで構成
される半導体接合部を形成する半導体薄膜の形成方法が
提供される．
《実施例）
以下、本発明を添付図面に基づき詳細に説明する．
第１図（ａ）（Ｗ （ｃ）（イ）は、本発明に係る半導
体薄膜の形成方法を説明するための図である．
本発明に係る方法に用いられる絶縁基板１は、ナトリウ
ムイオンをほとんど含有しないガラスや石英等からなり
、非晶質半導体層とのｇＢ張率の差や価格を考慮すると
＃７０５９基板等が好適に用いられる．基板１として＃
７０５９基板を用いる場合は、基板の表面に例えば酸化
シリコン膜（Ｓｉ０２）等を０．０１〜２．０１ｔｍ程
度の厚みに被着させて置くとよい．なぜなら、後述する
非晶質半導体層の結晶化工程で基板１からの不純物の混
入を阻止したり熱衝撃を緩和させることができるからで
ある．
次に、同図（ａ）に示すように、絶縁基ｖｉｌ上に一導
電型非晶質半導体層２を形成する．この非晶質半導体層
２は、プラズマＣＶＤ法、熱ＣＶＤ法、或いは光ＣＶＤ
法等で形成される．プラズマＣｖＤ法で形成する場合、
プラズマ反応炉を２ＴＯｒｒ程度に減圧して、反応炉内
にモノシラン（ＳｉＨ．）等の水素化シリコンガスに不
純物用ガスをｌｐｐｍ〜１％程度混入させて絶縁基板１
を２００〜３００℃に加熱しながらグロー放電分解する
ことにより絶縁基板１上に堆積する．不純物用ガスとし
ては、ｎ型半導体層（例えば一導電型非晶質半導体層）
を形成する場合はフ才スフィン（ＰＨ３）等が用いられ
、ｐ型半導体層（例えば一導電型非晶質半導体層とは反
対の導電型非晶質半導体層〉を形戒する場合はジボラン
（８２ Ｈｓ ）等が用いられる．この不純物ガスの濃
度を調整することによって、最終的に形成される半導体
単結晶内の不純物濃度を１ ０ １２ｃ ｍ−’〜１
０２２ｃ ｍ−’の範囲内等で任意に調整することがで
きる．この非晶質半導体層２は、５００〜２００００人
程度の厚みに形成される．
次に、同図（日に示すように、一導電型非晶質半導体層
２の所定部分に有機材料等から成るフォトレジスト膜を
塗布して１〜１０％のフッ硝酸溶液（ Ｈ Ｎ ０３
＋ Ｈ Ｆ ）中に２〜６０分程度浸漬してフォトレジ
スト膜が塗布された部分以外の一導電型非晶質半導体層
２をエッチング除去する．次に、同図（ｃ）に示すよう
に、一導電型非晶質半導体層２がエッチング除去された
部分に一導電型非晶質半導体層とは反対の導電型非晶質
半導体層３をプラズマＣＶＤ法、熱ＣＶＤ法、或いは光
ＣＶＤ法により形成する．この一導電型非晶質半導体層
がエッチング除去された部分に反対の導電型非晶質半導
体層を形成するにあたっては、例えばメタルマスクで一
導電型非晶質半導体層を被覆してエッチング除去された
部分だけに反対の導電型の非晶質半導体層を堆積しても
よいし、全面に反対の導電型非晶質半導体層を堆積して
重複部分の反対の導電型の非晶質半導体層を除去して形
成してもよい．また、一導電型非晶質半導体層と反対の
導電型非晶質半導体層との間に間隙を生じないように接
触して形成する．尚、一導電型非晶質半導体層と反対の
導電型非晶質とは一部が重複するように形成してもよい
．
次に、絶縁基板１を５００〜６００℃に２時間程度加熱
して、非晶質半導体層２、３内の水素を排出する．即ち
、非晶質半導体層２、３を絶縁基板１に均質に堆積する
ためにはシリコンの結合手を飽和させるための水素を含
有させなければならない．例えば絶縁基板１を２００〜
３００℃に加熱して非晶質半導体膜２、３を堆積すると
非晶質半導体膜２、３中に１０２１個ｃｍ””程度の水
素が含有されてしまう．ところが、水素を含有した状態
で非晶質半導体膜２、３を単結晶化すると、レーザーを
照射して加熱した際に水素が突沸して非晶質半導体膜が
絶縁基板から剥離する．そこで、絶縁基板１を５００〜
６００℃に加熱して非晶質半導体層２、３中の水素を１
０′！個ｃ ｍ−’程度まで低減させる．なお、加熱処
理温度が５００℃未満の場合は含有水素量を所望値まで
低減させ難く、また６００℃以上の場合は非晶質半導体
層２、３が多結晶化して単結晶化工程で膜中にクラック
（亀裂）を生じ易くなる．従って、この加熱処理温度は
５００〜６００℃の範囲で行うことが望ましい．
次に、同図（イ）に示すように、非晶質半導体層２、３
にレーザー光を照射して単結晶化させると同時に一導電
型半導体単結晶２と反対の導電型半導体単結晶３とで構
成される半導体接合部を形成する．レーザーとしては、
．例えばビームスポットが２０〜１００μｍでパワー０
．５〜２０Ｗの連続発振アルゴンレーザー等が好適に用
いられ、走査速度は１〜２０ｃｍ／ｓｅｃ程度である．
レーザー光を照射すると非晶質半導体膜２、３は１４０
０℃以上に加熱されて瞬間的に溶融しレーザー光が通り
過ぎると瞬時に固化して単結晶化する．半導体接合部の
不純物拡散領域の境界を明瞭にしていわゆる逆方向特性
やリーク電流等の素子特性を向上させるためにレーザー
の走査速度は単結晶化できる範囲でできるだけ速くする
ことが望ましく、また溶融した非晶質半導体層２、３を
瞬時に固化させるために非晶質半導体層２、３上等に放
熱を促進するポリエチレングリコール等の粘性物質を塗
布してレーザー光を照射するとよい．また、非晶質半導
体層２、３上に酸化シリコンｌｉ （ Ｓ ｚ ０２
）等を０．５μｍ程度の厚みに例えばプラズマＣＶＤ法
等で被着して置くとよい．なぜなら、非晶質半導体層２
、３がレーザーで加熱された際の熱をいち早く吸収して
瞬時に固化させることができ、また大気中から非晶質半
導体層２、３内への汚染を防止でき、さらに非晶質半導
体層２、３の表面の波打ち等を防止できるからである．
なお、一導電型半導体単結晶２及び反対の導電型半導体
単結晶３の不純物濃度は非晶質半導体層２、３を形成す
る際の不純物ガスの濃度にそのまま依存している．
上記実施例では一導電型非晶質半導体層と他の導電型非
晶質半導体層とでｐ−ｎ接合を形成することについて述
べたが、全く同様の方法によって第２図（一〜（イ）に
示すようなれ４″−ｐ ｎ １″接合も形成すること
ができる．
このように形成した半導体接合部を有する半導体薄膜２
、３上に例えば酸化シリコンや窒化シリコン等からなる
フィールド酸化膜やゲート絶縁膜を形成し、さらにアル
ミニュウムやニッケル等から成るソース電極、ゲート電
極、及びドレイン電極を所定部分に形成することにより
、異なるチャンネルのトランジスタで構成されるＣ−Ｍ
ＯＳ．｝−ランジスタを極めて容易に形成することがで
きる．（発明の効果〉
以上のように、本発明に係る半導体薄膜の形成方法によ
れば、絶縁基板上に７導電型の非晶質半導体層を被着形
成して所定部分をエッチング除去し、前記絶縁基板上の
一導電型非晶質半導体層を除去した部分に前記一導電型
とは反対の導電型の非晶質半導体層を前記一導電型非晶
質半導体層と接触した状態に被着形成し、これら非晶質
半導体層にレーザー光を照射して溶融・固化させること
により半導体層を単結晶化すると同時に一導電型半導体
単結晶と他の導電型半導体単結晶とで構成される半導体
接合部を形戒することから、例えばイオン注入装置のよ
うな大掛かりな装置を用いずに簡単な工程で大面積にわ
たって均質な半導体薄膜を高温処理工程を経ずに形成す
ることができ、もって基板としてガラス等の安価で大面
積の基板にＣ−ＭＯＳ等の異なるチャンネルのトランジ
スタを簡単に形成できる．DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application) The present invention relates to a method for forming a semiconductor thin film, and more particularly to a method for forming a single crystal semiconductor thin film having a semiconductor junction. (Prior art and its problems) There is a conventional laser beam crystallization method in which an amorphous semiconductor layer is irradiated with laser light to melt and solidify the amorphous semiconductor layer to form a single crystal. Various methods have been proposed for manufacturing three-dimensional ICs by applying this laser beam crystallization method, but when manufacturing three-dimensional ICs, the substrate is always limited to a single-crystal silicon substrate, and it is difficult to increase the area. In addition, since impurity ions are diffused into the semiconductor layer using ion implantation or thermal diffusion, it is not possible to diffuse impurity ions uniformly over a wide area, and it is difficult to use a substrate that can withstand high temperature heating. There is a problem of technical impossibility and avoidance, such as having to do so. Therefore, as a method for solving such problems, for example, Japanese Patent Application Laid-Open No. 62-214668 uses an inexpensive glass substrate that can be made into a large area as the substrate 11, as shown in FIG. A SiO2 film 12, etc. is formed on the SiO2 film, and boron 12a and phosphorus 12b, which will become impurities that will later form the channel region of the transistor, are implanted into a predetermined portion of this SiO2 film by ion implantation or the like, and then on this S z 02 film 12. Silicon thin film 1
3 is deposited and heated by irradiating the silicon thin film 13 with laser light, impurities in the SiO2 film 12 are thermally diffused into the silicon thin film 13 to form a channel region, and a reverse channel is formed on the glass substrate 11. It has also been proposed to form type thin film transistors 18, 23, etc.
However, in this conventional thin film transistor manufacturing method, impurities that form the channel region of the transistor must be implanted in advance into the SiO2 film 12 by ion implantation, etc., and the manufacturing process is complicated and the equipment is large. There is still the problem of having to prepare things. (Objective of the Invention) The present invention was devised in view of the problems of the conventional method, and provides a semiconductor that can be easily formed without using complicated processes such as ion implantation or large-scale equipment. It is an object of the present invention to provide a method for forming a thin film single crystal. (Structure of the Invention) According to the present invention, an amorphous semiconductor layer of one conductivity type is deposited on an insulating substrate and a predetermined layer is formed on the insulating substrate. A portion of the amorphous semiconductor layer of one conductivity type on the insulating substrate is removed by etching and sowing, and an amorphous semiconductor layer of a conductivity type opposite to the one conductivity type is added to the portion where the amorphous semiconductor layer of one conductivity type on the insulating substrate has been removed. Formed in contact with the semiconductor layer,
By irradiating these amorphous semiconductor layers with laser light and melting and solidifying them, the semiconductor layer is made into a single crystal, and at the same time, a semiconductor junction consisting of a semiconductor single crystal of one conductivity type and a semiconductor single crystal of another conductivity type is formed. A method for forming a semiconductor thin film is provided. <<Example>> Hereinafter, the present invention will be explained in detail based on the accompanying drawings. 1(a) (W) (c) and (a) are diagrams for explaining the method of forming a semiconductor thin film according to the present invention. The insulating substrate 1 used in the method according to the present invention contains sodium ions #7059 substrate is preferably used, considering the difference in gB elongation with the amorphous semiconductor layer and the price.
When using a 7059 substrate, it is recommended that a silicon oxide film (Si02) or the like be deposited on the surface of the substrate to a thickness of about 0.01 to 2.01 tm. This is because it is possible to prevent impurities from entering the substrate 1 and to alleviate thermal shock in the crystallization process of the amorphous semiconductor layer, which will be described later. Next, as shown in FIG. 4A, an amorphous semiconductor layer 2 of one conductivity type is formed on the insulating base vil. This amorphous semiconductor layer 2 is formed by a plasma CVD method, a thermal CVD method, or a photo CVD method.
Formed by law, etc. When forming by plasma CvD method,
The pressure of the plasma reactor is reduced to about 2 TOrr, and about 1 ppm to 1% of an impurity gas is mixed into hydrogenated silicon gas such as monosilane (SiH.) in the reactor to form the insulating substrate 1.
is deposited on the insulating substrate 1 by glow discharge decomposition while heating to 200 to 300°C. As an impurity gas, an n-type semiconductor layer (for example, an amorphous semiconductor layer of one conductivity type)
When forming a p-type semiconductor layer (for example, an amorphous semiconductor layer of a conductivity type opposite to one conductivity type amorphous semiconductor layer), diborane (PH3) is used. 82 Hs), etc. By adjusting the concentration of this impurity gas, the impurity concentration in the semiconductor single crystal that is finally formed can be adjusted to 1012 cm-' to 1.
It can be arbitrarily adjusted within the range of 022cm-'. This amorphous semiconductor layer 2 is formed to a thickness of about 500 to 20,000 layers. Next, as shown in FIG.
+ HF) for about 2 to 60 minutes to etch away the amorphous semiconductor layer 2 of one conductivity type except for the portion coated with the photoresist film. Next, as shown in FIG. 2C, an amorphous semiconductor layer 3 of a conductivity type opposite to the amorphous semiconductor layer 3 of the conductivity type is formed in the portion where the amorphous semiconductor layer 2 of the one conductivity type has been etched away. It is formed by a plasma CVD method, a thermal CVD method, or a photoCVD method. To form an amorphous semiconductor layer of the opposite conductivity type in the portion where the amorphous semiconductor layer of one conductivity type has been etched away, for example, the amorphous semiconductor layer of one conductivity type is covered with a metal mask and the amorphous semiconductor layer of one conductivity type is etched away. An amorphous semiconductor layer of the opposite conductivity type may be deposited only on the overlapped portion, or an amorphous semiconductor layer of the opposite conductivity type may be deposited on the entire surface, and an amorphous semiconductor layer of the opposite conductivity type may be deposited on the overlapping portion. It may also be formed by removing. Further, the amorphous semiconductor layer of one conductivity type and the amorphous semiconductor layer of the opposite conductivity type are formed in contact with each other without creating a gap. Note that the amorphous semiconductor layer of one conductivity type and the amorphous semiconductor layer of the opposite conductivity type may be formed so as to partially overlap. Next, the insulating substrate 1 is heated to 500 to 600° C. for about 2 hours to exhaust hydrogen in the amorphous semiconductor layers 2 and 3. That is, in order to uniformly deposit the amorphous semiconductor layers 2 and 3 on the insulating substrate 1, it is necessary to contain hydrogen to saturate the silicon bonds. For example, the insulating substrate 1 is
When the amorphous semiconductor films 2 and 3 are deposited by heating to 300° C., about 1021 cm" of hydrogen is contained in the amorphous semiconductor films 2 and 3. However, when the amorphous semiconductor films 2 and 3 are made into single crystals while containing hydrogen, the hydrogen bumps when heated by laser irradiation, causing the amorphous semiconductor films to peel off from the insulating substrate. Therefore, the insulating substrate 1 was
By heating to 600°C, hydrogen in the amorphous semiconductor layers 2 and 3 is reduced to 1
0′! Reduce the number of particles to about m-'. Note that if the heat treatment temperature is less than 500°C, it is difficult to reduce the hydrogen content to the desired value, and if the heat treatment temperature is 600°C or higher, the amorphous semiconductor layers 2 and 3 will become polycrystalline and the film will not be formed during the single crystallization process. cracks are more likely to occur. Therefore, it is desirable that this heat treatment be carried out at a temperature in the range of 500 to 600°C. Next, as shown in the same figure (a), amorphous semiconductor layers 2 and 3
A laser beam is irradiated to form a single crystal, and at the same time a semiconductor junction consisting of a semiconductor single crystal 2 of one conductivity type and a semiconductor single crystal 3 of the opposite conductivity type is formed. As a laser,
．． For example, when the beam spot is 20 to 100 μm, the power is 0.
．． A continuous wave argon laser of 5 to 20 W is preferably used, and the scanning speed is about 1 to 20 cm/sec.
When irradiated with laser light, the amorphous semiconductor films 2 and 3 become 140
When heated above 0°C, it melts instantaneously, and when a laser beam passes through it, it instantly solidifies and becomes a single crystal. In order to clarify the boundary of the impurity diffusion region of the semiconductor junction and improve device characteristics such as so-called reverse direction characteristics and leakage current, it is desirable to make the scanning speed of the laser as fast as possible within the range that can form a single crystal. In order to instantly solidify the amorphous semiconductor layers 2 and 3, it is preferable to apply a viscous substance such as polyethylene glycol that promotes heat dissipation onto the amorphous semiconductor layers 2 and 3, and then irradiate the layers with laser light. Further, silicon oxide li (S z 02
) etc. to a thickness of about 0.5 μm using, for example, plasma CVD. Because the amorphous semiconductor layer 2
, 3 can quickly absorb heat when heated by a laser and instantly solidify, and can prevent contamination from the atmosphere into the amorphous semiconductor layers 2 and 3. This is because it is possible to prevent the undulations, etc. on the surface of 2 and 3.
Note that the impurity concentration of the semiconductor single crystal 2 of one conductivity type and the semiconductor single crystal 3 of the opposite conductivity type directly depends on the concentration of impurity gas when forming the amorphous semiconductor layers 2 and 3. In the above embodiment, it has been described that a p-n junction is formed between an amorphous semiconductor layer of one conductivity type and an amorphous semiconductor layer of another conductivity type. ) It is also possible to form a curved 4"-p n 1" junction as shown in FIG.
, 3, by forming a field oxide film or a gate insulating film made of silicon oxide, silicon nitride, etc., and further forming source electrodes, gate electrodes, and drain electrodes made of aluminum, nickel, etc. in predetermined parts. C-M consisting of channel transistors
O.S. }-A transistor can be formed extremely easily. (Effects of the Invention) As described above, according to the method for forming a semiconductor thin film according to the present invention, an amorphous semiconductor layer of 7 conductivity types is formed on an insulating substrate, a predetermined portion is etched away, and a An amorphous semiconductor layer of a conductivity type opposite to the one conductivity type is deposited on a portion of the insulating substrate from which the one conductivity type amorphous semiconductor layer is removed, in contact with the one conductivity type amorphous semiconductor layer. By irradiating these amorphous semiconductor layers with laser light and melting and solidifying them, the semiconductor layer is made into a single crystal, and at the same time, a semiconductor composed of a semiconductor single crystal of one conductivity type and a semiconductor single crystal of another conductivity type is formed. By controlling the shape of the junction, it is possible to form a homogeneous semiconductor thin film over a large area in a simple process without using large-scale equipment such as an ion implanter, and without going through a high-temperature treatment process. As a result, transistors with different channels such as C-MOS can be easily formed on an inexpensive, large-area substrate such as glass.
第１図（３）（ｉｊ （ｃ）（イ）はそれぞれ本発明に
係る薄膜半導体の製造方法を説明するための図、第２図
（ａ）（ｂｌ（ｃ）（イ）はそれぞれ他の実施例を説明
するための図、第３図は従来の半導体薄膜の製造方法を
説明するための図である．
１、絶縁基板
２、一導電型非晶質半導体層
３、反対の導電型非晶質半導体層Figures 1 (3) (ij (c) and (a) are diagrams for explaining the method for manufacturing a thin film semiconductor according to the present invention, respectively, and Figures 2 (a) (bl (c) and (a) are diagrams for explaining the method for manufacturing a thin film semiconductor according to the present invention, respectively). Figure 3 is a diagram for explaining an example and a diagram for explaining a conventional method for manufacturing a semiconductor thin film. 1. An insulating substrate 2, an amorphous semiconductor layer 3 of one conductivity type, and a non-crystalline semiconductor layer of the opposite conductivity type. crystalline semiconductor layer
Claims (1)
所定部分をエッチング除去し、前記絶縁基板上の一導電
型非晶質半導体層を除去した部分に前記一導電型とは反
対の導電型の非晶質半導体層を前記一導電型非晶質半導
体層と接触した状態に被着形成し、これら非晶質半導体
層にレーザー光を照射して溶融・固化させることにより
半導体層を単結晶化すると同時に一導電型半導体単結晶
と他の導電型半導体単結晶とで構成される半導体接合部
を形成する半導体薄膜の形成方法。An amorphous semiconductor layer of one conductivity type is deposited on an insulating substrate, a predetermined portion is etched away, and the amorphous semiconductor layer of one conductivity type is formed on the removed portion of the insulating substrate. An amorphous semiconductor layer of the opposite conductivity type is deposited in contact with the amorphous semiconductor layer of one conductivity type, and these amorphous semiconductor layers are irradiated with laser light to melt and solidify the semiconductor. A method for forming a semiconductor thin film in which a layer is single-crystalized and at the same time a semiconductor junction portion consisting of a semiconductor single crystal of one conductivity type and a semiconductor single crystal of another conductivity type is formed.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16048089A JPH0324736A (en) | 1989-06-22 | 1989-06-22 | Forming method of semiconductor thin film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16048089A JPH0324736A (en) | 1989-06-22 | 1989-06-22 | Forming method of semiconductor thin film |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0324736A true JPH0324736A (en) | 1991-02-01 |
Family
ID=15715863
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP16048089A Pending JPH0324736A (en) | 1989-06-22 | 1989-06-22 | Forming method of semiconductor thin film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0324736A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6534832B2 (en) | 1993-09-07 | 2003-03-18 | Semiconductor Energy Laboratory Co., Ltd. | Display device and glass member and substrate member having film comprising aluminum, nitrogen and oxygen |
| US7038302B2 (en) | 1993-10-12 | 2006-05-02 | Semiconductor Energy Laboratory Co., Ltd. | Glass substrate assembly, semiconductor device and method of heat-treating glass substrate |
-
1989
- 1989-06-22 JP JP16048089A patent/JPH0324736A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6534832B2 (en) | 1993-09-07 | 2003-03-18 | Semiconductor Energy Laboratory Co., Ltd. | Display device and glass member and substrate member having film comprising aluminum, nitrogen and oxygen |
| US7038302B2 (en) | 1993-10-12 | 2006-05-02 | Semiconductor Energy Laboratory Co., Ltd. | Glass substrate assembly, semiconductor device and method of heat-treating glass substrate |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| EP0036137B1 (en) | Method for production of semiconductor devices | |
| JP3204986B2 (en) | Crystallization of semiconductor film region on substrate and device manufactured by this method | |
| JP2616741B2 (en) | Method for manufacturing polycrystalline silicon-germanium thin film transistor | |
| JP4637410B2 (en) | Semiconductor substrate manufacturing method and semiconductor device | |
| JPH0511415B2 (en) | ||
| EP0708479B1 (en) | Method of forming polycrystalline semiconductor thin film | |
| JP3859978B2 (en) | Device for forming a laterally extending crystal region in a semiconductor material film on a substrate | |
| KR980012600A (en) | Method of manufacturing semiconductor device and thin film transistor | |
| JPH0324736A (en) | Forming method of semiconductor thin film | |
| JP2731236B2 (en) | Method of manufacturing semiconductor device having thin film crystal layer | |
| JP3924828B2 (en) | Method for manufacturing crystalline semiconductor film and method for manufacturing thin film transistor | |
| JP2534980B2 (en) | Method for manufacturing crystalline semiconductor thin film | |
| JP2004055838A (en) | Method for manufacturing thin film transistor | |
| JP3173058B2 (en) | Method of forming semiconductor thin film | |
| JP2709376B2 (en) | Method for manufacturing non-single-crystal semiconductor | |
| JPS58134430A (en) | Manufacture of semiconductor device | |
| JP3157201B2 (en) | Method for manufacturing semiconductor device | |
| JP2799888B2 (en) | Method for manufacturing semiconductor device | |
| Stultz et al. | Beam processing of silicon with a scanning cw Hg lamp | |
| JP3210313B2 (en) | Method for improving characteristics of polycrystalline silicon thin film | |
| JPH033247A (en) | Manufacture of thin film transistor | |
| JP3931359B2 (en) | Manufacturing method of semiconductor device | |
| JPH0448723A (en) | Manufacture of semiconductor device | |
| JPH11251241A (en) | Manufacture of crystalline silicon layer, manufacture of solar battery, and manufacture of thin-film transistor | |
| JPH09283761A (en) | Semiconductor device and manufacture thereof |