JPH03241745A - Formation of wiring pattern - Google Patents
Formation of wiring patternInfo
- Publication number
- JPH03241745A JPH03241745A JP3732390A JP3732390A JPH03241745A JP H03241745 A JPH03241745 A JP H03241745A JP 3732390 A JP3732390 A JP 3732390A JP 3732390 A JP3732390 A JP 3732390A JP H03241745 A JPH03241745 A JP H03241745A
- Authority
- JP
- Japan
- Prior art keywords
- metal film
- melting point
- high melting
- wiring pattern
- point metal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000015572 biosynthetic process Effects 0.000 title description 2
- 229910052751 metal Inorganic materials 0.000 claims abstract description 44
- 239000002184 metal Substances 0.000 claims abstract description 44
- 238000002844 melting Methods 0.000 claims abstract description 26
- 230000008018 melting Effects 0.000 claims abstract description 24
- 238000000034 method Methods 0.000 claims description 25
- 239000000758 substrate Substances 0.000 claims description 5
- 238000005530 etching Methods 0.000 claims description 3
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 abstract description 7
- 229910017604 nitric acid Inorganic materials 0.000 abstract description 7
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 abstract description 6
- 229910052719 titanium Inorganic materials 0.000 abstract description 6
- 239000010936 titanium Substances 0.000 abstract description 6
- 238000007788 roughening Methods 0.000 abstract description 2
- 238000002310 reflectometry Methods 0.000 abstract 2
- 238000006243 chemical reaction Methods 0.000 description 6
- 238000010586 diagram Methods 0.000 description 4
- 238000009832 plasma treatment Methods 0.000 description 4
- 238000000059 patterning Methods 0.000 description 3
- 238000001020 plasma etching Methods 0.000 description 3
- 238000004381 surface treatment Methods 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 238000010306 acid treatment Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229920000742 Cotton Polymers 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 229910014299 N-Si Inorganic materials 0.000 description 1
- 210000000078 claw Anatomy 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 239000005360 phosphosilicate glass Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 239000003870 refractory metal Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Abstract
Description
【発明の詳細な説明】
（産業上の利用分野）
この発明は、反射防止膜として高融点金属膜を用いた金
属配線パターンの形成方法に関するものである。DETAILED DESCRIPTION OF THE INVENTION (Industrial Application Field) The present invention relates to a method of forming a metal wiring pattern using a high melting point metal film as an antireflection film.
（従来の技術）
金属パターンの形成方法としては、たとえば、特開昭５
９−１５４０２７号公報により開示されている方法があ
る。(Prior art) As a method for forming a metal pattern, for example, Japanese Patent Application Laid-open No. 5
There is a method disclosed in Japanese Patent No. 9-154027.
この開示方法の場合は、下地基板上に比較的光反射率の
大きい第１の金属層を形成し、この第１の金属層の上に
光反射率の低い第２の導電性膜を形成した後、第２の導
電性膜の上に写真製版技術によって耐エツチング性のホ
トレジスト膜からなる所望のパターンマスクを形成し、
このマスクを介して第２の導電性膜と第１の金属の層に
ドライエツチングを施すようにしたものである。In the case of this disclosed method, a first metal layer having a relatively high light reflectance is formed on a base substrate, and a second conductive film having a low light reflectance is formed on this first metal layer. After that, a desired pattern mask made of an etching-resistant photoresist film is formed on the second conductive film by photolithography,
Dry etching is applied to the second conductive film and the first metal layer through this mask.
一方、第４図は従来の別の配線パターンの形成方法を示
す工程断面図であり、この第４図により、従来の配線パ
ターンの形成方法について説明する。On the other hand, FIG. 4 is a process sectional view showing another conventional wiring pattern forming method, and the conventional wiring pattern forming method will be explained with reference to FIG.
まず、第４図（ａ）に示すように、Ｓｔの下地基板１上
に絶縁膜２としてのＢＰＳＧ （ホウ素−リンケイ酸ガ
ラス）を介して配線材料としてＮ −Ｓ ｉ、あるいは
ｊＶ −３ｔ−Ｃｕの金属膜３をスパッタ法等の方法に
より５０００人〜１００００人形成する。First, as shown in FIG. 4(a), N-Si or jV-3t-Cu is deposited as a wiring material on a St base substrate 1 through BPSG (boron-phosphosilicate glass) as an insulating film 2. The metal film 3 is formed by 5,000 to 10,000 people by a method such as a sputtering method.
次に、第４図（ｂ）に示すように、金属膜３上に反射防
止膜として、高融点金属膜４を３００人〜１０００人程
度形成する。この高融点金属膜４としては、タングステ
ン、チタン、モリブデン、ニッケル等があげられる。Next, as shown in FIG. 4(b), a high melting point metal film 4 is formed as an antireflection film on the metal film 3 by about 300 to 1000 people. Examples of the high melting point metal film 4 include tungsten, titanium, molybdenum, and nickel.
次に、第４図（ｃ）に示すように、高融点金属膜４上に
バターニングのためのレジスト５を塗布し、露光・現像
により第４図（ｄ）に示すように、レジストパターン６
を形成する。Next, as shown in FIG. 4(c), a resist 5 for patterning is applied on the high melting point metal film 4, and by exposure and development, a resist pattern 6 is formed as shown in FIG. 4(d).
form.
次に、第４図（ｅ）に示すように、レジストパターン６
をマスクにして、上記高融点金属膜４および金属膜３を
ＲＩＥ （リアクティブイオンエツチング）により、エ
ツチングし、配線パターン７を形成する。Next, as shown in FIG. 4(e), a resist pattern 6
Using as a mask, the high melting point metal film 4 and metal film 3 are etched by RIE (reactive ion etching) to form a wiring pattern 7.
第５図（ａ）〜第５図（ｆ）は上記高融点金属膜４とし
て、チタン５００人、表面処理の場合のレジストパター
ン６の上面ＳＥＭ（走査型電子顕微鏡）の観測像を示す
図であり、第５図（ａ）と第５図（ｄ）、第５図（ｂ）
と第５図（ｃ）、第５図（ｃ）と第５図（ｆ）はそれぞ
れ露光量５００ ｍ５ｅｃ、変換差−０，０岬、露光量
６２０ ｍ５ｅｃ、変換差−０，１ｔｔｍ 、露光量７
５０ ｍ５ｅｃ。5(a) to 5(f) are views showing SEM (scanning electron microscope) images of the upper surface of the resist pattern 6 in the case of surface treatment using titanium as the high melting point metal film 4. Yes, Figure 5(a), Figure 5(d), Figure 5(b)
and Fig. 5(c), Fig. 5(c) and Fig. 5(f) respectively have an exposure amount of 500 m5ec, a conversion difference of -0.0 cape, an exposure amount of 620 m5ec, a conversion difference of -0.1ttm, and an exposure amount. 7
50 m5ec.
変換差−０，２ａｍの場合を示しており、露光量の多少
にかかわらず、配線パターン７が欠落していることがわ
かる。This shows the case where the conversion difference is -0.2 am, and it can be seen that the wiring pattern 7 is missing regardless of the amount of exposure.
（発明が解決しようとする課題）
しかしながら、以上述べた第４図に示す配線パターンの
形成方法では、金属膜３の露光光の波長（４３６ｎｍ、
３６５ｎｍ）での反射率（以下反射率という）は８０〜
９０％であり、高融点金属膜４の反射率でも６０％程度
であり、レジスト５のバターニングの際、反射光により
レジストパターン６が欠落し、ひいては配線パターンが
欠落し、断線や抵抗の増加といった問題を引き起こす。(Problems to be Solved by the Invention) However, in the method for forming the wiring pattern shown in FIG. 4 described above, the wavelength of the exposure light of the metal film 3 (436 nm,
365 nm) (hereinafter referred to as reflectance) is 80~
90%, and the reflectance of the high melting point metal film 4 is also about 60%, and when patterning the resist 5, the resist pattern 6 is missing due to reflected light, and the wiring pattern is also missing, resulting in disconnection and increased resistance. cause such problems.
この発明は前記従来技術が持っている問題点のうち、反
射防止膜である高融点金属膜の反射率が充分低くないこ
とに起因するその反射光によるレジストパターンが欠落
して、配線が断線し易いという問題点について解決した
配線パターンの形成方法を提供するものである。This invention solves the problems of the prior art described above, which is caused by the fact that the reflectance of the high-melting point metal film that is the anti-reflection film is not low enough, and the resist pattern is missing due to the reflected light and the wiring is disconnected. The present invention provides a method for forming a wiring pattern that solves the problem of ease of use.
（課題を解決するための手段）
この発明は前記問題点を解決するために、配線パターン
の形成方法において、反射防止膜である高融点金属膜を
０□プラズマで数分処理しかつ硝酸で処理し、その反射
率を１０％程度低くする工程を導入したものである。(Means for Solving the Problems) In order to solve the above-mentioned problems, the present invention provides a wiring pattern forming method in which a high melting point metal film, which is an anti-reflection film, is treated with 0□ plasma for several minutes and then treated with nitric acid. However, a process has been introduced to lower the reflectance by about 10%.
（作 用）
この発明によれば、配線パターンの形成方法において、
以上のような工程を導入したので、高融点金属膜の反射
率が１０％程度低下することにより、後工程でレジスト
パターンの形成時に高融点金属膜による反射光がなくな
り、レジストパターンの欠落を抑制し、ひいては配線パ
ターンの欠落、断線による抵抗の増加を抑制する。した
がって、前記問題点を除去できる。(Function) According to the present invention, in the method of forming a wiring pattern,
By introducing the above process, the reflectance of the high melting point metal film is reduced by about 10%, which eliminates the light reflected by the high melting point metal film during the formation of the resist pattern in the subsequent process, suppressing the loss of the resist pattern. This also suppresses increases in resistance due to missing wiring patterns and disconnections. Therefore, the above problem can be eliminated.
（実施例）
以下、この発明の配線パターンの形成方法の実施例につ
いて図面に基づき説明する。第１図（ａ）ないし第１図
（ｆ）はその一実施例の工程断面図である。(Example) Hereinafter, an example of the method for forming a wiring pattern of the present invention will be described based on the drawings. FIGS. 1(a) to 1(f) are process cross-sectional views of one embodiment.
この第１図（ａ）〜第１図（ｆ）において、−第４図（
ａ）〜第４図（ｅ）と同一部分には、同一符号を付して
述べる。In this Fig. 1(a) to Fig. 1(f), - Fig. 4(
The same parts as in a) to FIG. 4(e) will be described with the same reference numerals.
まず、第１図（ａ）に示すように、従来法と同じように
Ｓｉの下地基板１上にＢＰＳＧによる絶縁膜２を形成し
、この絶縁膜２上に配線用の金属膜３を形成する。First, as shown in FIG. 1(a), an insulating film 2 made of BPSG is formed on a Si base substrate 1 as in the conventional method, and a metal film 3 for wiring is formed on this insulating film 2. .
さらに、第１図（ｂ）に示すように、上記金属膜３上に
チタンによる反射防止用の高融点金属膜４を５００人程
度の厚さに形成する。Furthermore, as shown in FIG. 1(b), a high melting point metal film 4 made of titanium for antireflection is formed on the metal film 3 to a thickness of about 500 mm.
ここで、バターニングのためのレジスト５を塗布する前
に、第１図（ｃ）に示すように、上記高融点金属膜４の
表面を０□プラズマにて１分〜５分程度表面の粗面化処
理するとともに、その表面を硝酸により処理する。Here, before applying the resist 5 for patterning, as shown in FIG. In addition to surface treatment, the surface is treated with nitric acid.
これにより、高融点金属膜４の表面の反射率は処理前に
比べ約１０％程度低下する。この粗面化処理の後、第１
図（ｄ）に示すように、レジスト５を塗布し、次いで、
第１図（ｅ）に示すように、露光・現像を行い、レジス
トパターン６を形成する。As a result, the reflectance of the surface of the high melting point metal film 4 is reduced by about 10% compared to before the treatment. After this roughening treatment, the first
As shown in figure (d), resist 5 is applied, and then
As shown in FIG. 1(e), exposure and development are performed to form a resist pattern 6.
さらに、第１図（ｆ）に示すように、レジストパターン
６をマスクにして、高融点金属膜４と金属膜３をＲＩＥ
によりエツチングすることにより、配線パターン７を形
成する。Furthermore, as shown in FIG. 1(f), using the resist pattern 6 as a mask, the high melting point metal film 4 and the metal film 3 are subjected to RIE.
By etching, a wiring pattern 7 is formed.
第２図に高融点金属膜４としてチタン５００人の場合、
反射率の０２プラズマ処理時間依存性を示す。処理時間
数分で反射率が１０％程度低下し５分程度で飽和し、一
定の値となっているのがわかる。これから処理時間は１
分〜５分程度で充分であると考えられる。In the case of 500 titanium as the high melting point metal film 4 in Figure 2,
The dependence of reflectance on 02 plasma treatment time is shown. It can be seen that the reflectance decreases by about 10% after several minutes of processing time, saturates after about 5 minutes, and remains at a constant value. From now on, the processing time is 1
It is considered that about 5 minutes is sufficient.
第３図（ａ）〜第３図（ｆ）は上記高融点金属膜４とし
て、チタンを５００人程度の厚さに形成し、チタン５０
０人０□プラズマ処理、さらに硝酸処理をして粗面化し
た場合のレジストパターン６の上面ＳＥＭ（走査型電子
顕微鏡）観察像を示す図である。3(a) to 3(f), titanium is formed to a thickness of about 500 mm as the high melting point metal film 4,
0 is a diagram showing an SEM (scanning electron microscope) observation image of the upper surface of the resist pattern 6 when the surface is roughened by plasma treatment and further nitric acid treatment.
第３図（ａ）と第３図（ｄ）、第３図（ｂ）と第３図（
ｅ）、第３図（ｃ）と第３図（ｆ）はそれぞれ露光量４
７０ｍ５ｅｃ、変換差−０，０−１露光量５６０ｍ５ｅ
ｃ、変換差−０，１ｐｍ、露光量７００ｍ５ｅｃ、変換
差−０，２ｐｍの場合である。Figure 3(a) and Figure 3(d), Figure 3(b) and Figure 3(
e), Figure 3(c) and Figure 3(f) are each exposed at an exposure level of 4.
70m5ec, conversion difference -0,0-1 exposure amount 560m5e
c, conversion difference -0.1 pm, exposure amount 700 m5ec, conversion difference -0.2 pm.
この第３図（ａ）〜第３図（ｆ）からも明らかなように
、露光量の多いところでは配線パターン７の欠落がみら
れるが、露光量の少ないところでは配線パターン７の欠
落は少なくなっており、反射率低下の効果が顕著にあら
れれていることがわかる。As is clear from FIGS. 3(a) to 3(f), the wiring pattern 7 is missing in areas where the exposure amount is high, but the wiring pattern 7 is less likely to be missing in areas where the exposure amount is low. It can be seen that the effect of reducing the reflectance is remarkable.
（発明の効果）
以上詳細に説明したように、この発明によれば、反射防
止膜である高融点金属膜を０□プラズマと硝酸で処理し
てその反射率が１０％程度低下するようにしたので、高
融点金属膜の反射によるレジストパターンの欠落に起因
する配線パターンの欠落や断線、抵抗の増加といったよ
うな問題点を解消でき、したがって、より安定した配線
パターンの形成が可能となるものである。(Effects of the Invention) As explained in detail above, according to the present invention, the high melting point metal film, which is an antireflection film, is treated with 0□ plasma and nitric acid to reduce its reflectance by about 10%. Therefore, problems such as missing wiring patterns, disconnections, and increased resistance caused by missing resist patterns due to reflection from high-melting point metal films can be solved, and it is therefore possible to form more stable wiring patterns. be.
第１図（ａ）ないし第１図（ｆ）はこの発明の配線パタ
ーンの形成方法の一実施例を説明するための工程断面図
、第２図は同上実施例における高融点金属に施す０□プ
ラズマ処理対反射率の関係を示す特性図、第３図（ａ）
ないし第３図（ｆ）は同上実施例における高融点金属に
０２プラズマ処理と硝酸処理を施した場合のレジストパ
ターンの上面のＳＥＭ観察像を示す図、第４図（ａ）〜
第４図（ｅ）は従来の配線パターンの形成方法を説明す
るための工程断面図、第５図（ａ）〜第５図（ｆ）は従
来の配線パターンの形成方法における高融点金属膜に表
面処理をしない場合のレジストパターンの上面ＳＥＭ観
察像を示す図である。
■・・・下地基板、２・・・絶縁膜、３・・・金属膜、
４・・・高融点金属膜、５・・・レジスト、６・・・レ
ジストパターン、７・・・配線パターン。
＄清明の工程跡向図
第１図
２５８−
Ｏ２プラスマ爪理路閂
Ｏ２フ〉棉’Ｊｅ％！’５ とＪｉｄｔＹヤ４■φＨ」
尤４第２図
本臼社のユ程１図
第４図
３：金＠膜
４：旨版４属吸
５！レジスト
６：レジ又ドパターン
７；薯Ｇ築バダーン1(a) to 1(f) are process cross-sectional views for explaining one embodiment of the wiring pattern forming method of the present invention, and FIG. Characteristic diagram showing the relationship between plasma treatment and reflectance, Figure 3 (a)
3(f) to 3(f) are views showing SEM observation images of the upper surface of the resist pattern when the refractory metal in the same example was subjected to 02 plasma treatment and nitric acid treatment, and FIG. 4(a) to
FIG. 4(e) is a process cross-sectional view for explaining the conventional wiring pattern forming method, and FIGS. 5(a) to 5(f) show high melting point metal films in the conventional wiring pattern forming method. FIG. 3 is a diagram showing a top SEM observation image of a resist pattern without surface treatment. ■...Base substrate, 2...Insulating film, 3...Metal film,
4... High melting point metal film, 5... Resist, 6... Resist pattern, 7... Wiring pattern. ＄ Seimei process trace diagram 1 258- O2 plasma claw road lock O2fu〉Cotton 'Je%! '5 and JidtYya4■φH'
尤4 fig. 2 Honususha's Yu-cho 1 fig. 4 fig. 3: gold@membrane 4: Uma version 4 genus suction 5! Resist 6: Resist pattern 7;
Claims (1)
成する工程と、 （ｂ）上記金属膜上に反射防止用の高融点金属膜の形成
後、この高融点金属の表面をＯ＿２プラズマと硝酸によ
る表面処理を行う工程と、 （ｃ）レジストを塗布して所定のパターンの露光と現像
を行うことによりレジストパターンを形成した後、エッ
チングを行って配線パターンを形成する工程と、 よりなる配線パターンの形成方法。[Claims] (a) A step of forming a metal film for wiring on a base substrate via an insulating film; (b) After forming a high melting point metal film for anti-reflection on the metal film, (c) Applying a resist, exposing and developing a predetermined pattern to form a resist pattern, and then etching to form a wiring pattern. A method for forming a wiring pattern, comprising: a process for forming a wiring pattern;
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3732390A JPH03241745A (en) | 1990-02-20 | 1990-02-20 | Formation of wiring pattern |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3732390A JPH03241745A (en) | 1990-02-20 | 1990-02-20 | Formation of wiring pattern |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH03241745A true JPH03241745A (en) | 1991-10-28 |
Family
ID=12494451
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3732390A Pending JPH03241745A (en) | 1990-02-20 | 1990-02-20 | Formation of wiring pattern |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH03241745A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010165821A (en) * | 2009-01-15 | 2010-07-29 | Seiko Npc Corp | Method of manufacturing semiconductor device |
-
1990
- 1990-02-20 JP JP3732390A patent/JPH03241745A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010165821A (en) * | 2009-01-15 | 2010-07-29 | Seiko Npc Corp | Method of manufacturing semiconductor device |
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