JPH03237736A - Manufacture of 2-layer tab - Google Patents

Abstract

PURPOSE:To reduce noise due to a high frequency by providing a metal layer as a ground on the rear surface of a 2 layer TAB, and conducting the part of a lead formed on the front surface to a ground metal layer of the rear sur face through a viahole. CONSTITUTION:Photosensitive resist layers 6, 6 are formed on metal layers of both side surfaces of a base formed with metal layers 1, 2 on both side surfaces of an electric insulating resin film made of polyimide, etc., without using adhesive. After the metal layer of a part corresponding to a viahole is dissolved according to a resist pattern 7 formed on the lower surface of the base to expose the resin, a viahole 11 is formed. After a thin metal film layer 12 is formed on the lower surface of the base after the viahole is formed, a photoresist 13 is again formed thereon, a photomask having various hole patterns is provided on the resist, irradiated with light, then developed to form a resist pattern on the lower surface of the base, and a ground metal layer 18 is formed on the entire lower surface of the base. An exposed part corre sponding to various holes of the insulating resin is removed by dissolving to form various holes 16, 17 except the viahole on the lower surface of the base.

Description

DETAILED DESCRIPTION OF THE INVENTION (Industrial Field of Application) The present invention relates to a TAB (Tal) e
The present invention relates to a manufacturing method of AU-tomated Bondino>, and more specifically, to a manufacturing method of a two-layer TAB having metal layers on both sides of a substrate.

(Conventional technology) In recent years, the development of low-cost, highly reliable multi-functional devices has been rapidly progressing in the electronics industry. There is an increasing demand for compact devices that have multiple functions, are lightweight, and thin.Accordingly, the development of new element mounting technologies is becoming more and more important, especially the miniaturization and diversification of IC packages. Development is proceeding as an important issue.With the progress of such element mounting technology, there is a desire for fine bin spacing that can meet the demand for a large number of bins in small IC packages.

TAB has a large number of fine metal lead patterns for bonding on a tape-like composite or resin film substrate made of polyimide, etc., and its feature is that it has a test pad, so it can be used to detect bonding defects or chip defects after bonding. It has many advantages, such as being able to discover the problem before it is mounted on the board, requiring smaller IC pads than wire bonding, and making it possible to have multiple bins in the layer.

TABs are roughly divided into three types based on their structure: 1-layer TAB, 24-layer TAB, and 3-layer TAB. One-layer TAB is a type of TAB that is made of patterned metal tape such as copper foil, but since the thickness of the metal layer itself is several tens of micrometers at most, it has poor mechanical strength, and there are no pins that can be applied. Since the number is limited, it is not suitable for high density. This one! In order to compensate for the drawbacks of TAB, a three-layer TAB was developed in which a metal foil was pasted onto a plastic film substrate using an adhesive, and then the metal foil was patterned.
In this three-layer TAB, due to the influence of the adhesive used as the intermediate layer, even if a highly insulating plastic film such as polyimide resin is used for the substrate, sufficient insulation between the pins cannot be ensured. It has the disadvantage of.

Two-layer lower AR is a product in which a metal layer is directly formed on the surface of a plastic film substrate by sputtering, vacuum evaporation, plating, etc. without using an adhesive, and then patterned. Because it does not use any electrical insulation, it can be used stably without causing any problems with electrical insulation, so it is expected to have good prospects in the future.

To outline the manufacturing method for two-layer TAB, first, metal is deposited on the surface of a plastic film substrate using a dry surface treatment method such as sputtering, vacuum evaporation, or wet surface treatment such as electroless plating. Deposit the layers. Usually, polyimide resin, which has high electrical insulation and excellent thermal stability, is used as the plastic film in this case.
Further, copper is used for the deposited metal layer. Next, a patterning process is applied to the surface of the metal layer. For this purpose, a photoresist is applied to a thickness greater than the thickness of the leads to be formed, and a masking pattern with the desired lead pattern is applied to expose the resist to light. By performing this process, a pattern consisting of exposed and non-exposed areas is formed on the resist, which is then developed, and the non-exposed or exposed areas are selectively dissolved and removed to form a resist pattern on the metal layer. Form. Metal is deposited by electroplating on the areas where the resist has been removed by development, that is, where the metal layer is exposed, to a thickness that is equal to or less than the thickness of the resist, and finally the remaining resist is dissolved and removed to form the desired lead pattern. It is possible to obtain a two-layer TAB with

In order to perform continuous bonding of IC chips with the two-layer TAB obtained in this way, a sprocket hole for tape feeding, a device hole for exposing the lead tip and bonding it to the IC chip, and a rear end of the lead are required. OL8 holes for connection to external circuits must be provided by chemical etching.

These various holes are formed by applying a resist pattern on a polyimide resin tape and then dissolving the resin.

(Problems to be Solved by the Invention) The 21TAB manufactured as described above can have a large number of lead pins without the presence of an adhesive layer as an intermediate layer, so it has excellent electrical characteristics and heat resistance. Stable physical and mechanical properties can be obtained;
When bonded to a C chip and used in a computer, etc., the TA often increases due to the increase in processing speed.
A high frequency current flows through some of the leads formed in B and generates noise, so it is necessary to take countermeasures against this. In order to improve this drawback, a metal layer is further provided on the back side of the 2mTAB as a ground, and a via hole for conduction is drilled in a polyimide resin substrate to connect a part of the lead formed on the surface. It is conceivable that high-frequency noise can be reduced by making a part of the conductive layer conductive through the via hole to the ground metal layer on the back surface, but a specific manufacturing method for this has not yet been established.

The present invention is based on the above-mentioned findings and aims to provide a novel manufacturing method for obtaining a two-layer TAB with less noise caused by high frequencies.

(Means for Solving the Problems) The present invention for achieving the above object consists of the following basic steps.

That is, the method for producing a two-layer sub-AR according to the present invention uses an electrically insulating resin (hereinafter referred to as "insulating resin") film, such as polyimide, as a base, with metal layers formed on both sides without using an adhesive, After a photosensitive resist layer is formed on the metal layer on both sides of the substrate, a photomask mainly having a predetermined lead pattern is applied to the resist layer on the upper surface of the substrate, and a photomask mainly having a predetermined via hole pattern is applied to the resist layer on the lower surface of the substrate. A step of applying a photomask and irradiating the resist with light and then developing the resist on both sides to form a resist pattern of each shape on both sides of the substrate.A step of forming leads on the top surface of the substrate according to the resist pattern formed on the top surface of the substrate. According to the resist pattern formed on the lower surface of the base, a portion of the metal layer on the lower surface corresponding to the via hole is melted to expose an insulating resin portion, and then the exposed portion of the insulating resin is melted to form a predetermined via hole. After forming a metal thin film layer on the lower surface of the substrate after forming the via hole, a photosensitive resist is again formed on the metal thin film layer, and a photomask having various predetermined hole patterns other than via holes is formed on the resist. A resist pattern is formed on the bottom surface of the substrate by irradiation with light and development to form a resist pattern on the bottom surface of the substrate, and according to the resist pattern, the substrate is exposed so that portions corresponding to various predetermined holes other than via holes in the insulating resin on the bottom surface of the substrate are exposed. It is characterized by the following steps: forming a ground metal layer over the entire lower surface; and dissolving and removing exposed portions of the insulating resin corresponding to various holes to form various holes other than via holes on the lower surface of the substrate. It is something.

In the present invention, different methods are used to form the leads on the upper surface of the substrate depending on the thickness of the metal layer applied in advance on the upper surface of the substrate.

That is, when the metal layer applied to the upper surface of the substrate is a thin so-called underlying metal layer, a metal plating layer is deposited by electroplating on the exposed underlying metal layer according to a resist pattern formed on the upper surface of the substrate. After forming the lead preform of the laminated metal, a so-called semi-additive method is applied to form the lead by dissolving and removing the resist on the top surface of the substrate and the underlying metal layer remaining thereunder, and is also applied to the top surface of the substrate. When the metal layer has a thickness comparable to the height of the leads, the exposed metal layer is etched according to the resist pattern formed on the top surface of the substrate, and then the resist on the non-etched metal layer is dissolved and removed to form the leads. Subtractive method is adopted.

In addition, via holes can be formed in an insulating resin substrate by etching the exposed metal layer according to a resist pattern formed on the lower surface of the substrate to expose the insulating resin, and then dissolving and removing the exposed portion of the insulating resin, that is, an etching method. After a metal plating layer is laminated by electroplating on the exposed metal layer according to the resist pattern to form a metal pattern of the laminated metal, the resist and the metal layer under the resist are dissolved and removed, thereby exposing the exposed metal layer. A method of dissolving and removing the insulating resin, that is, a semi-additive method, or as another method, the exposed metal layer is etched according to the resist pattern formed on the lower surface to expose the insulating resin part, and then the resist is removed. A method of removing the pattern to expose the metal layer under the resist, laminating a metal plating layer on the exposed metal layer by electroplating, and dissolving and removing the exposed portion of the insulating resin, that is, an etching method and a semi-additive method. Various holes other than via holes are formed by dissolving and removing the insulating resin exposed when forming the ground metal layer on the bottom surface of the substrate.
In the present invention, holes are formed twice in the insulating resin to form various predetermined holes.

Furthermore, in the present invention, by forming a ground metal layer over the entire portion of the bottom surface of the substrate excluding various holes other than via holes, conduction is established between the leads and the ground metal layer through the via holes. The metal layer is formed by forming a metal thin film layer on the lower surface of the substrate after the via hole is formed, forming a photosensitive resist layer again on the metal thin film layer, and applying a photomask having a predetermined hole pattern other than the via hole on the resist. A resist pattern is formed by performing exposure and development, and a metal plating layer is deposited by electroplating on the exposed metal thin film layer according to the resist pattern formed again in this way, and then the resist is dissolved and removed. A semi-additive method is used to dissolve and remove the metal thin film layer and metal layer under the resist exposed by the method, or a plating metal layer is immediately deposited by electroplating on the metal thin film layer formed on the bottom surface of the substrate after the via hole is formed. Any method using a subtractive method in which a laminated metal layer is formed, a resist pattern is then formed again in the same manner as above, the exposed laminated metal layer is dissolved and removed according to the resist pattern, and the remaining resist is further removed. This method is adopted.

As mentioned above, there are several methods for forming leads on the top surface of the substrate, forming via holes in the insulating resin, and forming a ground metal layer for conduction on the bottom surface of the substrate. Two-layer TA that achieves the desired performance by appropriately combining
B can be easily obtained.

(Function) Next, details of the method for manufacturing a two-layer TAB according to the present invention and its function will be explained based on the drawings.

FIG. 1 shows a process diagram of the method for manufacturing a two-layer TAB of the present invention. As shown in FIG. 1, the process of the present invention is to form a metal layer on both sides of an insulating resin film without using an adhesive, and use this as a base. A step of forming a resist pattern, a step of forming a lead according to the resist pattern formed on the upper surface of the substrate, a step of forming a via hole according to the resist pattern formed on the lower surface of the substrate, and a step performed on the lower surface of the substrate after the via hole is formed. The process consists of the formation of a resist pattern having various hole patterns except via holes, the formation of a ground metal layer according to the resist pattern, and the formation of various holes other than via holes, as well as lead formation during each process. As a method, either a semi-additive method or a subtractive method is used, and as a means for forming a via hole, an etching method,
Either a semi-additive method or a combination of both methods is selected, and either a semi-additive method or a subtractive method is selected as a means for forming the ground metal layer and various holes other than via holes. be.

FIGS. 2 and 3 each show a two-layer TAB according to the present invention.
FIG. 4 is a step-by-step process explanatory diagram illustrating an outline of the processing steps when lead formation is performed by a semi-additive method and a subtractive method in the production of a two-layer TAB obtained by the present invention. FIG. 3 is a partial plan view showing the appearance of an example.

(a> in Figures 2 and 3 means X in Figure 4)
-Y section, and (b) is a sectional view of a portion corresponding to the X'-Y' section. In addition, drawings (a) to (a) shown in the same line as (a) and (b) in FIGS. 2 and 3,
g) shows the cross-sectional state of the material at each step in the order of the steps.

In the second stage of the process diagram, (mouth) indicates the case where the copper layer pattern on the bottom surface of the substrate for forming via holes was etched by the etching method, and (mouth) indicates the case where the semi-additive method was used. In addition, (゛°〉) shows the cross section when the etching method and semi-additive method are used together, and the fifth and sixth
In the rows, (E) and (E) indicate when the ground metal layer and various holes other than via holes are formed using the semi-additive method, and (BO) and (E°) indicate when they are formed using the subtractive method. A cross section is shown.

Further, FIG. 5 shows an example of a lead pattern mask used in the present invention, and FIGS. 6 and 7 each show examples of via hole pattern masks. Further, FIGS. 8 and 9 show photomasks having hole patterns other than via holes used when forming a resist pattern again.

In FIGS. 2 and 3, 1 is an upper metal layer, 2 is a lower metal layer, 3 is an insulating resin substrate, and 4 and 5 are photosensitive resist layers formed on the upper metal layer 1 and the lower metal layer 2, respectively. be.

6 and 7 are resist layers 4 and 5 on the upper and lower surfaces, respectively.
These are various resist patterns formed by masking according to a predetermined purpose and then exposing and developing the resist pattern.

8 is a lead formed according to the resist pattern 6 on the upper surface, and 9 is an organic resin coating layer that covers the entire upper surface after the lead 8 is formed. 10 is a metal layer pattern formed according to the resist pattern on the lower surface.

Reference numeral 11 denotes a via hole formed in a predetermined portion of the insulating resin substrate according to the initial resist pattern.

Reference numeral 12 denotes a metal thin film layer deposited over the entire lower surface of the substrate after the via hole is formed. 13 is a resist layer formed again on the lower surface of the substrate, and 14 is a resist pattern formed again by exposing and developing the resist layer 13.

Reference numerals 15, 16 and 17 are a device hole, an OL8 hole and a sprocket hole, which are respectively formed in predetermined portions of the insulating resin base according to the re-formed resist pattern 14.

Reference numeral 18 denotes a ground metal layer formed on the lower surface of the substrate so as to be electrically connected to a portion of the lead 8 on the upper surface via the via hole 11.

Next, the method for manufacturing the two-layer plate B of the present invention will be described in order, including the steps of forming metal layers and resist patterns on both sides of the substrate, forming leads, forming various holes, and forming a ground metal layer.

The bottom of the resist pattern: In the present invention, metal layers 1 and 2 are basically formed on both the upper and lower surfaces.
A tape-shaped insulating resin film formed without using an adhesive is used as the substrate 3. Insulating resins used in the present invention include polyimide resins, acrylic resins,
These include polyamide resin, fluorocarbon resin, polysulfone resin, polyimide amide resin, silicone resin, etc.

The metal layers 1 and 2 to be formed on both the upper and lower surfaces of the insulating resin film base 3 may be formed on the surface of the base by sputtering, vacuum evaporation, electroless plating, or a combination of these methods. These methods may be further combined with an electrolytic plating method, and in short, any method may be employed as long as it forms a metal layer directly on the insulating resin substrate 3 without applying an adhesive. can. Copper is generally used as the metal layer formed on the base 3 from the viewpoint of electrical performance and cost, but there is no problem even if a thin film layer of chromium, nickel, etc. is present between the base 3 and the copper.

If the lead formation is performed by a semi-additive method, the thickness of the metal layer l formed on the top surface of the substrate must be thick enough to withstand soft etching in the pre-treatment when forming the metal electroplated layer during lead formation. Although there is no particular limit, the thickness is preferably in the range of 0.5 to 2 μm in view of the workability of the partial melting process of the top metal layer 1 for independent leads as will be described later.

Further, when the lead formation is performed by a subtractive method, the thickness of the upper surface metal layer 1 must be made equal to the desired lead thickness before the resist layer 4 is formed. Therefore, the metal layer 1 is formed by first forming a thin metal layer on the upper surface of an insulating resin substrate by the sputtering method described above, and then
Furthermore, it is preferable to deposit plating metal on the upper surface to a predetermined thickness by electroplating. Typically required lead thicknesses are up to about 35 μm.

In addition, the thickness of the metal layer 2 formed on the lower surface of the base is determined by the thickness of the metal layer 2 formed on the bottom surface of the substrate when the metal layer pattern 10 for forming a predetermined via hole in the insulating resin is formed by an etching method. Since it plays a role similar to a resist in the process of dissolving the insulating resin, it must be able to withstand the solution used to dissolve the insulating resin, and prevent the dissolution of unnecessary parts of the insulating resin due to pinhole defects, etc. It is appropriate to set the thickness in the range of 2 μm to 5 μm, taking into consideration the need to prevent the metal layer from peeling off from the substrate and ease of dissolution in the dissolving process of the metal layer 2 after forming the resist pattern.

Furthermore, when the metal layer pattern 10 is formed by a semi-additive method, as described later, after the resist pattern 7 is formed, overlay is performed on the metal layer 2 by electroplating. There is no particular limitation as long as the thickness can withstand, but in consideration of ease of melting work in the melting process of the metal layer 2 performed after electroplating, it is desirable that the groove is 1 μm thick, and 0.2 to 1 μm thick. It is appropriate to set the thickness to approximately the same level.

Furthermore, when using both the etching method and the semi-additive method, the thickness of the metal layer 2 can be reduced to 0.05 for the same reason.
It is desirable to set it as the range of 2-1 micrometer.

The thickness of the resist layer 4 formed on the top surface of the substrate needs to be greater than 35 μm since the lead is required to have a thickness of 35 μm or more when lead formation is performed by a semi-additive method. be. Further, when lead formation is performed by a subtractive method, there is no particular restriction on the thickness, but when considering the pattern accuracy after melting when the metal layer 1 is melted after the resist pattern 6 is formed, the thickness is 1 to 10 mm.
Approximately μm is appropriate.

The type of resist is one that can be applied to the above thickness, and is suitable for electroplating or melting of the metal layer 1 during lead formation on the top surface and melting of the metal layer 2 during formation of the metal layer pattern 10 on the bottom surface. General commercially available products are sufficient as long as they can withstand the plating solutions and dissolving solutions used in There are negative resists that remain as a photomask, and positive resists in which the light-irradiated areas dissolve during development by adding a photosensitive functional group to novolak resin, etc. However, by reversing the pattern of the photomask, any type of resist can be used. Available for use.

In addition, either a liquid state or a solidified dry film can be used.

When using a liquid resist, coating on the metal layer of the substrate can be done using general coating methods such as the barcode method, dip coating method, or spin code method, as well as electrostatic coating method in which the resist solution is charged and applied in the form of a spray. may be adopted.

The solutions for dissolving metals N1 and 2 include generally acidic solutions such as hydrochloric acid, sulfuric acid, and nitric acid, metal chloride solutions such as iron chloride solution and copper chloride solution, and peroxide solutions such as ammonium persulfate solution. etc. are used, so any material that can withstand these solutions will suffice. Further, an alkaline solution is sometimes used as the dissolving solution, but in this case, an alkali-resistant resist may be used.

Generally, in order to form a pattern using a resist, it is necessary to remove the solvent contained in the resist after applying the resist. This is done to improve the strength of the resist itself and at the same time to increase the adhesion between the resist and the metal layer.The solvent is usually removed by drying, but the processing temperature at this time depends on the resolution of the resist. It is best to set it as high as possible without lowering the value.

Further, in order to make the formed pattern stronger after exposure and development, a heat treatment is sometimes performed, but in this case, a temperature higher than that used in the above-mentioned solvent drying treatment is employed.

Next, a photomask with a desired pattern is applied to the resist layers 4 and 5 formed on the metal layer, each is irradiated with an appropriate amount of light, this is developed, and a resist pattern 6 is formed on the metal layer 1. In addition, a resist pattern 7 is formed on the metal layer 2, and a photomask is attached to the resist layer 4 on the upper surface of the substrate so that a resist pattern for forming leads is formed after development. 5
A photomask on which a via hole pattern is formed is mainly used.

A photomask for forming leads on the upper surface of the substrate may be, for example, one shown in FIG. 5, but it may also have a hole pattern such as the sprocket hole.

Further, examples of the photomask for forming via holes on the lower surface of the substrate include those shown in FIG. 6 or FIG. 7 obtained by inverting the photomask.

Although the wavelength of the light irradiated to expose the resist is determined by the characteristics of the resist, ultraviolet rays are generally used. Furthermore, the photomask referred to here refers to a material in which an emulsion containing silver or a metal such as chromium is baked onto glass or a translucent plastic film.

There are two types of exposure methods: a contact exposure method in which the resist surface and a photomask are brought into close contact with each other, and a projection exposure method in which the resist surface and the photomask are arranged parallel to each other at a certain distance. may be adopted.

(Refer to Figures 2 and 3 (a), (mouth), (mouth°), and (mouth°°) above.) Formation step: To perform lead formation using a semi-additive method, the top surface of the substrate must be Metal layer formed according to the formed resist pattern 6■
After forming a lead preform by laminating a metal plating layer on the exposed portion of the lead by electroplating so that the metal layer after lamination has a desired lead thickness, that is, a thickness of 35 μm or more, the resist pattern 6 is dissolved and removed, Further, the metal layer 1 on the upper surface of the substrate after the resist pattern 6 has been removed is dissolved and removed to make the leads 8 electrically independent.

When the leads are formed by a subtractive method, the leads 8 are formed by dissolving the exposed portions of the metal layer 1 that are formed according to the resist pattern 6 formed on the upper surface of the substrate. The metal layer 1 may be dissolved using either a dipping method or a spray method, or a combination of these methods may be used.

After forming the leads, an organic resin film 9 is applied over the entire upper surface of the substrate. The coating with this organic resin film 9 has the role of protecting the insulating resin exposed on the surface by the subsequent melting of the insulating resin.

The organic resin used for this need only be one that can withstand the solution of the insulating resin. When polyimide resin is used as the insulating resin, a strong alkaline solution is used for the solution, so rubber-based , epoxy-based, silicon-based organic resins, etc. may be used.

(Figures 2 and 3 (b), (mouth°), (mouth°°)
) and (C)) Multiple via hole formations: When via holes are formed by etching, first the exposed portion of the metal layer 2 formed according to the resist pattern 7 formed on the lower surface of the substrate is melted to form the metal layer pattern 1.
0 is formed, and the insulating resin 3 exposed by forming this metal layer pattern 10 is melted to form a via hole 11.
form.

In the case of polyimide resin, the insulating resin is dissolved using a strong alkaline solution such as hydrazine hydrate, alkali hydroxide, etc. alone or in combination, or a solution in which methyl alcohol, ethyl alcohol, propyl alcohol, etc. are mixed.

In addition, when the via hole is formed by a semi-additive method, the resist pattern 7 formed on the bottom surface of the substrate is
Electroplating is applied to the exposed portions of the metal layer 2 produced according to the above steps to build up the metal layer.

The metal layer after this electroplating plays a role similar to that of a resist in the insulating resin melting process described later, so naturally it needs to be able to withstand the insulating resin solution, and it also needs to be able to withstand the insulating resin solution. The thickness must be determined in consideration of melting unnecessary portions of the insulating resin due to defects such as holes and preventing peeling of the metal N2 during melting work.

In this sense, it is appropriate that the thickness of the metal layer after lamination by electroplating is 2 μm or more, preferably in the range of about 2 to 5 μm.

Thereafter, the resist pattern 7 and the metal layer 2 existing thereunder are dissolved to form the metal layer pattern 10. Next, by forming the metal layer pattern 10, the exposed portion of the insulating resin 3 exposed on the lower surface of the substrate is melted, and the via hole 11 can be formed at a predetermined position.

In addition, when forming a via hole using both an etching method and a semi-additive method, the exposed portion of the metal layer 2 is dissolved according to the resist pattern 7 formed on the lower surface of the substrate, and then the resist of the resist pattern 7 is dissolved. The underlying metal layer 2 is exposed by melting, and a metal layer is deposited thereon by electroplating to form a metal layer pattern 10. As mentioned above, it is appropriate that the thickness of the metal layer pattern 10 after lamination at this time is about 2 to 5 μm.

This is no different from what has been described above in that after the metal layer pattern 10 is formed, the exposed portion of the insulating resin is melted to form the via hole 11.

To melt this insulating resin, in addition to the so-called wet etching method in which the substrate is immersed in a soluble solution and the insulating resin in the portion corresponding to the via hole 11 is dissolved, the exposed insulating resin is irradiated with a laser beam. There is a method of melting the resin in the irradiated area.

In the latter method using a laser, it is possible to use a carbon dioxide laser or an excimer laser. It is necessary to adequately adjust the power. In addition, in the method of melting and forming predetermined various holes other than via holes and via holes to be described later using a laser, it is possible to omit coating with an organic resin film on the upper surface of the substrate after the leads 8 are formed.

The shape of the via hole 11 formed in this step may be a perfect circle, ellipse, square, rectangle, etc., but this via hole is intended to provide electrical continuity between the lead 8 formed on the top surface of the substrate and the ground metal layer 18 on the bottom surface of the substrate. Since the purpose is to measure, the shape is not particularly important.

Next, a metal thin film layer 12 is formed over the entire lower surface of the substrate while metalizing the exposed portion of the insulating resin film on the side surface of the via hole 11 using a conductive treatment method.

The formation of this metal thin film layer 12 is necessary for the subsequent step of forming the ground metal layer 18.

In forming the metal thin film layer 12, any of dry metal deposition methods such as sputtering, vacuum evaporation, etc., and wet metal deposition methods such as electroless plating can be employed.

(Figures 2 and 3 (c), (2) and (e) above)
Reference> In order to form the ground metal layer 18 by a semi-additive method, a resist layer 13 is formed again on the metal thin film layer 12, a photomask having a hole pattern other than via holes is applied, and then exposed and developed. A resist pattern 14 is formed so that the resist remains on the device hole 15.0 [8 hole 16 and sprocket hole 17.

An example of the photomask is a pattern as shown in FIG. 8, for example.

A metal electroplating layer is laminated on the exposed portion of the metal thin film layer 12 created by forming the resist pattern 14 as described above, and then the resist formed by the resist pattern 14 is removed, and then the metal thin film existing thereunder is laminated. By dissolving and removing the exposed portion of M12 and the metal layer pattern 10 existing thereunder, and thereby dissolving and removing the exposed portion of the insulating resin, various predetermined holes other than via holes on the lower surface of the base are formed. A base body can be obtained in which the ground metal layer 18 is formed over the entire portion except for various holes other than via holes. The thickness of the electroplated metal layered on the metal thin i-layer 12 to form the ground metal layer 18 by electrolytic plating is 5 to 30 mm.
It is preferable to set it to about μm.

Furthermore, when forming the ground metal layer 18 by a subtractive method, a plating metal is first deposited on the metal thin film layer 12 by electroplating, and the ground metal layer (
Metal plating layer>18 is formed.

As mentioned above, the appropriate thickness is 5 to 30 μm.

Next, a resist layer 13 is formed on the ground metal layer 18, and a photomask having a hole pattern other than via holes is applied thereto, exposed and developed to form a device hole 15, an OL8 hole 16 and a sprocket hole 1.
A resist pattern 14 is formed so that no resist remains on the resist pattern 7. An example of the photomask is a pattern as shown in FIG. 9, for example. The insulating resin is exposed by melting the exposed portion of the ground metal layer 18 exposed by the formation of the resist pattern 14, the metal thin film layer 12 and the metal layer pattern 10 existing thereunder, and the exposed portion of the insulating resin is melted. By removing it, various predetermined holes other than via holes can be formed in a predetermined portion of the insulating resin, and a ground metal layer 18 can be formed over the entire portion excluding the predetermined various holes other than via holes.

The resist used in this step can be the same as the resist used to form the resist layers 4 and 5 at the beginning, and the steps such as exposure, development, and dissolution of the metal layer for forming the resist pattern 14 can also be used. The process may be carried out in accordance with the procedure used to form resist patterns 6 and 7 which were carried out first. 7 Finally, the organic resin film 9 coated on the top surface of the substrate is removed to complete the two-layer TAB product.

(See Figure 2 and Figure 3 (E), (E), (E),
(see ) and (g) As described above, when using the method of the present invention, various means are utilized depending on the situation in each step to accurately form leads on the top surface of the substrate and to remove insulating resin. It is possible to form various holes in the substrate and to form a ground metal layer on the bottom surface of the substrate, and also to ensure conduction between the leads on the top surface of the substrate and the ground metal on the bottom surface through the via holes.

The two-layer TAB obtained according to the present invention is put to practical use by further covering the exposed metal portion entirely or partially with gold plating, tin plating, etc., depending on the application.

(Example> Next, embodiments of the present invention will be described.

The formation of leads, via holes, various holes other than via holes, and ground metal layer were carried out comprehensively by changing the formation methods, and the following symbols are used to indicate each method next to the implementation number. .

Lead formation, A: Semi-additive method B: Subtractive method via hole formation, A: Etching method B: Semi-additive method C: Combined method various holes and A: Semi-additive method ground metal layer formation B: Subtractive method Example 1 (A-
A-A) Polyimide resin film-like substrate with a size of 15 mm x 15 Gm (manufactured by Azuma DuPont, Kapton 20ON, thickness 5
0μm) on both sides, copper sulfate 10g/j! ,EDT
A60g/j! , Formalin 6II11! /J! , dipyridyl 30/1, polyethylene glycol 0.5
pH 1 using an electroless copper plating solution with a composition of g/j
As 2.5, immersion treatment was performed at 70°C for 10 minutes to form an electroless copper plating film of about 0.2 μm, and then copper sulfate was added at 100 g/j! Electrolysis was carried out at a current density of 2^/di'' using an electrolytic copper plating solution having a composition of 180 g/41 sulfuric acid to form a base copper layer of 1 .mu.m thick on the top surface and 2 .mu.m thick on the bottom surface.

Next, apply PHER-HC60 on the base copper layer on the top surface of the substrate.
0 (manufactured by Tokyo Ohka Co., Ltd., negative photoresist) about 40μ
m thickness and on the underlying copper layer on the bottom surface.
Apply HC40 (manufactured by Tokyo Ohka Co., Ltd., negative photoresist) to a thickness of about 5μ using a bar coater,
After each was dried at 70°C for 30 minutes, the upper resist layer had a size of 48 mm x 4 Bmm, an inner lead pitch of 160 μm, and an inner lead width of 70 μm.
A glass photomask formed by arranging a TAB pattern with 244 leads in a square shape was brought into close contact with the resist surface and irradiated with 900 mJ of ultraviolet rays. Made of glass, TAB on top
A photomask in which eight via holes corresponding to the pattern were formed was brought into close contact with the photomask, and exposure was performed by irradiating 200 mJ of ultraviolet rays.

The ultraviolet rays are irradiated using an ultra-high pressure mercury lamp (manufactured by Oak Seisakusho Co., Ltd.).
It was used.

Next, the resist layers on both sides were coated using P) fER developer (manufactured by Tokyo Ohka Co., Ltd.) at 25°C for 7 minutes on the top side, and at 25°C on the bottom side.
After developing for 2 minutes to obtain the desired TAB pattern,
Drying treatment was performed at 0° C. for 30 minutes.

Next, the lower side was heated at 50°C using 200 g/l of copper chloride solution.
The exposed base copper layer was dissolved by treatment for 3 minutes, and the upper surface was electrolyzed for 50 minutes using the electrolytic copper plating solution described above at a current density of 2 A/da'' to form copper leads with a thickness of about 35 μm. A promorphoid was formed.

Thereafter, the substrate was treated in a 4% sodium hydroxide solution at 50°C for 1 minute to remove the resist on both sides, and the underlying copper layer on the upper surface was treated with copper chloride ioo g7ρ, ammonium chloride 100 g/fl, and ammonium carbonate 20 g/E. ,
Each lead is made independent by dissolving it in an ammonia-based alkaline solution having a composition of 400 mQ/fl of ammonia water.
Next, using FSR (manufactured by Fuji Pharmaceutical Co., Ltd.) as an organic resin film, it was applied to a thickness of about 10 μm over the entire upper surface of the substrate.
Coating was performed by drying at 130° C. for 30 minutes.

Next, using a mixture of ethyl alcohol and a 1N potassium hydroxide solution in a volume ratio of 1:■, the substrate was immersed for 4 minutes at 50°C to dissolve the exposed portion of the polyimide resin on the bottom surface of the substrate and form a via hole. .

After that, a copper thin film layer is formed over the entire bottom surface by the electroless copper plating described above, and then PMER-IC600 is coated with about 20%
After applying the coating to a thickness of μm using a bar coater and drying at 70°C for 30 minutes, a photomask formed to transmit light only through the device holes, 0 [B holes, and sprocket holes was applied, and ultraviolet rays were applied. After 400 mJ of irradiation and treatment at 25° C. for 3 minutes using the above-mentioned developer to obtain a predetermined resist pattern, it was dried at 110° C. for 30 minutes.

Next, after forming a copper ground layer of approximately 20 μm on the exposed copper layer on the bottom surface of the substrate using the electrolytic copper plating described above, the remaining resist was removed at 50°C using a 4% aqueous solution of sodium hydroxide.
The copper chloride layer was treated for 1 minute and removed, and then treated with the aforementioned copper chloride solution at 50° C. for 3 minutes to dissolve and remove the underlying copper layer under the resist pattern on the lower surface, exposing the polyimide. By this melting operation, the approximately 20 μm copper layer previously formed is approximately 17 μm thick.
It had decreased to m.

The exposed polyimide was melted under the same melting conditions as described above to form a device hole, an OL3 hole, and a sprocket hole.

Furthermore, the organic resin film on the top surface is FSR! Using 4J synergist (manufactured by Fuji Yakuhin Co., Ltd.), treatment was performed at 70°C for 15 minutes to remove the peel. It was possible to obtain a two-layer lower AR in which the parts were electrically connected through via holes.

The two-layer TAB thus obtained had a copper ground layer reliably formed on the bottom surface.

Example 2 (A・A-Al As a starting material, a polyimide resin film similar to that of Example 1 was used as a substrate, and a copper layer with a thickness of 0.25 μm was formed on both sides by sputtering, and then electrolytic copper plating was performed. Using a substrate in which the thickness of the underlying copper layer on the upper surface was adjusted to 1 μm and the thickness of the underlying copper layer on the lower surface was adjusted to 2 μm,
When each treatment was carried out in the same manner as in Example 1, it was possible to obtain a two-layer TAB in the same manner as in Example (2).

Example 3 (A-A-B) Using the same polyimide resin film as in Example 1 as a starting material as a base, a copper plating film of about 0.2 μm was formed on both sides of the base by the electroless copper plating described above. Thereafter, a base copper layer having a thickness of 1 μm on the top surface and a thickness of 2 μm on the bottom surface was formed by the electrolytic copper plating described above.

Next, apply PMER-HC600 to a thickness of about 40 μm on the underlying copper layer on the top surface of the substrate, and PMER-HC600 on the underlying copper layer on the bottom surface.
HC40 was applied to a thickness of approximately 5 μm, and after drying, a photomask having the lead pattern used in Example 1 was placed on the upper resist layer in close contact with the resist surface, and a layer of 900 m was coated.
A photomask having the via hole pattern used in Example 1 was brought into close contact with the resist layer on the lower surface, and 200 mJ of ultraviolet rays was irradiated for exposure.

Next, the resists on both sides were developed to obtain a predetermined TAB pattern, and then dried.

Next, on the lower side, the exposed base copper layer was dissolved with the above-mentioned chloride steel solution, and on the sumo wrestler side, the above-mentioned electrolytic copper plating was applied to a thickness of approximately 35 mm.
A lead preform of .mu.m copper was formed.

Thereafter, the resists on both sides were removed, the underlying copper layer on the upper surface was dissolved in the ammonia-based alkaline solution described above to make each lead independent, and then the entire upper surface of the substrate was covered with an organic resin film made of FSR.

Next, the exposed portion of the polyimide resin on the lower surface of the substrate was dissolved with the polyimide solution described above to form a via hole.

Next, after forming a copper thin film layer over the entire bottom surface by the above-mentioned electroless copper plating, a current density of 2A is applied using the above-mentioned electrolytic copper plating solution.
/dm2 for 25 minutes, approximately 20μ was applied to the entire bottom surface.
A copper layer of m was formed. PHER-HC40 on this copper layer
was applied to a thickness of about 5 μm, and after drying, irradiated with 200 mJ of ultraviolet rays through a photomask in which the black and white of the hole pattern except for the via hole used in Example 1 was inverted, and then P) f
A predetermined resist pattern was obtained by processing for 3 minutes at 25° C. using an ER developer, and then dried at 110° C. for 30 minutes.

Next, the copper chloride solution described above was treated at 50° C. for 15 minutes to dissolve the exposed copper layer on the lower surface side, expose the polyimide resin, and remove the remaining resist.

The exposed polyimide was melted under the same melting conditions as described above to form a device hole, an OL8 hole, and a sprocket hole.

Furthermore, the organic resin film on the top surface was removed at 70°C using FSR stripping solution.
15 minutes of treatment to remove the peel and have a predetermined lead on the top surface and a copper ground metal layer on the bottom surface,
Two-layer TA with upper and lower metal parts electrically connected through via holes
I was able to get a B.

The two-layer TAB thus obtained had a copper ground layer reliably formed on the bottom surface.

Example 4 (A-A-B) A polyimide resin film similar to that of Example 1 was used as a starting material, and copper layers each having a thickness of 0.25 μm were formed on both sides by sputtering, and electrolytic copper was further applied. Using a substrate in which the thickness of the underlying copper layer on the upper surface was adjusted to 1 μm and the thickness of the underlying copper layer on the lower surface was adjusted to 2 μm by plating,
When each treatment was carried out in the same manner as in Example 3, a two-layer TAB could be obtained in the same manner as in Example 3.

Example 5 (A-B-Al Using the same polyimide resin film as in Example 1 as a starting material as a substrate, a copper plating film of about 0.2 μm was formed on both sides of the substrate by electroless copper plating as described above. Thereafter, a base copper layer having a thickness of 1 μm was formed on the upper surface by the above-mentioned electrolytic copper plating.

Next, apply PHER-HC600 to a thickness of approximately 40 μm on the underlying copper layer on the top surface of the substrate, and apply PHER-HC600 on the underlying copper layer on the bottom surface.
HC40 was applied to a thickness of approximately 5 μm, and after drying, a photomask having the lead pattern used in Example 1 was placed on the upper resist layer in close contact with the resist surface, and a layer of 900 m was coated.
A photomask in which the black and white of the via hole pattern used in Example 1 was inverted was brought into close contact with the lower resist layer, and exposure was performed by irradiating ultraviolet rays of 200 mJ.

Next, the resists on both sides were developed to obtain a predetermined TAB pattern, and then dried.

Next, the upper surface was electrolytically plated as described above to form a copper lead preform having a thickness of about 35 μm. On the other hand, the lower surface was electroplated using the aforementioned electrolytic copper plating at a current density of 2 A/dm2 for 13 minutes to adjust the thickness of the underlying copper layer on the lower surface to about 3 .mu.m.

Thereafter, the resists on both sides were removed, the underlayer on the upper surface was dissolved with the ammonia-based alkaline solution mentioned above to make each lead independent, and then the entire upper surface of the substrate was covered with an organic resin film made of FSR.

The lower surface side was immersed in the aforementioned copper chloride solution at 50° C. for 30 seconds to dissolve the base copper layer under the resist pattern and expose the polyimide.

Next, the exposed portion of the polyimide resin on the lower surface of the substrate was dissolved with the above-mentioned polyimide solution to form a via hole.

After that, after forming a copper thin film layer over the entire bottom surface by electroless copper plating as described above, PIER-HC600 was coated with about 20%
After coating to a thickness of μm and drying, a photomask having a hole pattern excluding via holes used in Example 1 was applied, irradiated with 400 mJ of ultraviolet rays, and developed to obtain a predetermined resist pattern. Dry.

Next, after forming a copper ground layer of approximately 18 μ-thick on the exposed copper layer on the bottom side using the above-mentioned electrolytic copper plating, the remaining resist was removed and treated with the above-mentioned copper chloride solution at 50°C for 30 seconds. Then, the underlying copper layer under the resist pattern on the lower surface was dissolved and removed to expose the polyimide. As a result of this melting operation, the previously formed copper layer of about 20 μm was reduced to about 17 μm.

The exposed polyimide was melted under the same melting conditions as described above to form device holes, 018 holes, and sprocket holes.

Furthermore, the organic resin film on the top surface was removed using FSR stripping solution, and the top surface had a predetermined lead, the bottom surface had a copper ground metal layer, and the upper and lower metal parts were electrically connected through via holes.
It was possible to obtain layer TAB.

The two-layer TAB thus obtained had a copper ground layer reliably formed on the bottom surface.

Example 6 (A-B-A) A polyimide resin film similar to that of Example 1 was used as a starting material, and copper layers each having a thickness of 0.25 μm were formed on both sides by sputtering, and electrolytic copper was further applied. Using a substrate in which the thickness of the underlying copper layer on the upper surface was adjusted to 1 μm by plating, each treatment was performed in the same manner as in Example 5, and a two-layer TAB could be obtained in the same manner as in Example 5.

Example 7 (A-B・B) Using the same polyimide resin film as in Example 1 as a starting material as a substrate, a copper plating film of about 0°2 μm was formed on both sides of the substrate by the above-mentioned electroless copper plating. Thereafter, a base copper layer having a thickness of 1 μm was formed on the upper surface by the above-mentioned electrolytic copper plating.

Next, apply PHER and IC600 to a thickness of about 40 μm on the base layer on the top surface of the substrate, and P)4ER on the base copper layer on the bottom surface.
・HC40 was applied to a thickness of approximately 5 μm, and after drying, a photomask having the lead pattern used in Example 1 was brought into close contact with the resist surface on the upper resist layer.
Example 5 was applied to the lower resist layer by irradiating ultraviolet rays of mJ.
A photomask having the via hole pattern used in the above was placed in close contact with the photomask, and 200 mJ of ultraviolet rays were irradiated for exposure.

Next, the resists on both sides were developed to obtain a predetermined TAB pattern, and then dried.

Next, the upper surface side was electrolytically plated as described above to form a copper lead preform having a thickness of about 35 μm. On the other hand, the lower surface side was electrolytically plated as described above, and the thickness of the base steel layer on the lower surface was adjusted to about 3 μm.

Thereafter, the resists on both sides were removed, the underlying copper layer on the upper surface was dissolved in the ammonia-based alkaline solution described above to make each lead independent, and then the entire upper surface of the substrate was covered with an organic resin film made of FSR.

The lower surface side was immersed in the aforementioned copper chloride solution at 50° C. for 30 seconds to dissolve the base copper layer under the resist pattern and expose the polyimide.

Next, the exposed portion of the polyimide resin on the lower surface of the substrate was dissolved with the above-mentioned polyimide solution to form a via hole.

Next, after forming a copper thin film layer over the entire bottom surface using the electroless copper plating described above, a layer of about 20 μm is applied to the entire bottom surface using the electrolytic copper plating described above.
A copper layer of m was formed. P) IER-HC4 on this copper layer
0 to a thickness of about 5 μm, and after drying, irradiated with 200 mJ of ultraviolet rays through a photomask having a hole pattern excluding via holes used in Example 3, and then developed.
After obtaining a predetermined resist pattern, it was dried.

Next, the exposed copper layer on the bottom side was dissolved with the aforementioned copper chloride solution to expose the polyimide resin, and the remaining resist was removed.

The exposed polyimide was melted under the same melting conditions as described above to form a device hole, an OL8 hole, and a sprocket hole.

Furthermore, the organic resin film on the top surface was removed using FSR stripping solution, and the two-layer T had a predetermined lead on the top surface, a copper ground layer on the bottom surface, and the upper and lower metal parts were electrically connected through via holes.
I was able to get AB.

The two-layer TAB thus obtained had a copper ground layer reliably formed on the bottom surface.

Example 8 (A-B-B) A polyimide resin film similar to that of Example 1 was used as a starting material, and copper layers each having a thickness of 0.25 μm were formed on both sides by sputtering. Using a substrate in which the thickness of the underlying copper layer on the upper surface was adjusted to 1 μm and the thickness of the underlying copper layer on the lower surface was adjusted to 2 μm by plating,
When each treatment was carried out in the same manner as in Example 3, a two-layer TAB could be obtained in the same manner as in Example 3.

Implementation @ 9 (A-C-A) Using the same polyimide resin film as in Example 1 as a base material as a starting material, a copper plating film of about 0.2 μm was formed on both sides of the base by the above-mentioned electroless copper plating. Thereafter, a base copper layer having a thickness of 1 μm was formed on the upper surface by the above-mentioned electrolytic copper plating.

Next, apply PIER and HC600 to a thickness of about 40 μm on the underlying copper layer on the top surface, and PHER・HC600 on the underlying copper layer on the bottom surface.
HC40 was applied to a thickness of approximately 5 μm, and after drying, a photomask having the lead pattern used in Example 1 was placed on the upper resist layer in close contact with the resist surface, and a layer of 900 m was coated.
A photomask having the via hole pattern used in Example 1 was brought into close contact with the resist layer on the lower surface, and 200 mJ of ultraviolet rays was irradiated for exposure.

Next, the resists on both sides were developed and then dried to obtain a predetermined TAB pattern.

Next, the lower surface side was immersed in the copper chloride solution mentioned above at 50°C for 1 minute to dissolve the exposed underlying copper layer.
The sumo wrestler side was electrolytically plated as described above to form a lead preform made of copper with a thickness of approximately 35 μm.

Thereafter, the resists on both sides were removed, the underlying copper layer on the upper surface was dissolved in the ammonia-based alkaline solution described above to make each lead independent, and then the entire upper surface of the substrate was covered with an organic resin film made of FSR.

Next, on the lower surface side, use the electrolytic copper plating described above, with a current density of 2
Electroplating was performed at A/dm2 for 13 minutes to adjust the thickness of the underlying copper layer pattern on the lower surface of the substrate to about 3 μm.

Next, the exposed portion of the polyimide resin on the lower surface of the substrate was dissolved with the above-mentioned polyimide solution to form a via hole.

After that, after forming a copper thin film layer over the entire bottom surface by electroless copper plating as described above, PIER-HC600 was coated with about 20%
After coating to a thickness of μm and drying, a photomask having a hole pattern excluding via holes used in Example 1 was applied, irradiated with 400 mJ of ultraviolet rays, and developed to obtain a predetermined resist pattern. Dry.

Next, apply the electrolytic copper plating described above to approximately 18 μm on the exposed copper area on the bottom side.
After forming a copper ground layer of m thickness, the remaining resist was removed, and the underlying copper layer under the resist pattern on the lower surface was dissolved and removed using the aforementioned copper chloride solution to expose the polyimide. As a result of this melting operation, the previously formed copper layer of about 20 μm was reduced to about 17 μm.

The exposed polyimide was melted under the same melting conditions as described above to form a device hole, an OL8 hole, and a sprocket hole.

Furthermore, the organic resin film on the top surface was removed using FSR stripping solution, and the top surface had a predetermined lead, the bottom surface had a copper ground metal layer, and the upper and lower metal parts were electrically connected through via holes.
It was possible to obtain layer TAB.

The two-layer TAB thus obtained had a copper ground layer reliably formed on the bottom surface.

Example 10 (A-C-A) As a starting material, a polyimide resin film similar to that of Example 1 was used as a substrate, and copper layers each having a thickness of 0.25 μm were formed on both sides by sputtering, and further electrolytic copper was added. Using a substrate in which the thickness of the underlying copper layer on the upper surface was adjusted to 1 μm by plating, various treatments were carried out in the same manner as in Example 9. As in Example 9, a two-layer structure 8 could be obtained. Ta.

Example 11 (A-C-B) Using the same polyimide resin film as in Example 1 as a starting material as a base, a copper plating film of about 0.2 μm was formed on both sides of the base by the electroless copper plating described above. Thereafter, a base copper layer having a thickness of 1 μm was formed on the upper surface by the above-mentioned electrolytic copper plating.

Next, apply PHER HC600 to a thickness of about 40 μm on the underlying copper layer on the top surface, and PHER on the underlying copper layer on the bottom surface.

HC40 was applied to a thickness of approximately 5 μm, and after drying, a photomask having the lead pattern used in Example 1 was placed on the upper resist layer in close contact with the resist surface, and a layer of 900 m was coated.
A photomask having the via hole pattern used in Example 5 was brought into close contact with the lower resist layer, and 200 mJ of ultraviolet rays was irradiated for exposure.

Next, the resists on both sides were developed to obtain a predetermined TAB pattern, and then dried.

Next, on the lower side, the exposed base copper layer was dissolved with the above-mentioned copper chloride solution, and on the sumo wrestler side, the above-mentioned electrolytic copper plating was applied to a thickness of approximately 35 mm.
A lead preform of .mu.m copper was formed.

Thereafter, the resists on both sides were removed, the underlying copper layer on the upper surface was dissolved in the ammonia-based alkaline solution described above to make each lead independent, and then the entire upper surface of the substrate was covered with an organic resin film made of FSR.

Next, the thickness of the underlying copper layer pattern on the lower surface of the substrate was adjusted to about 3 μm by electrolytic copper plating described above over the entire lower surface.

Next, the exposed portion of the polyimide resin on the lower surface of the substrate was dissolved with the above-mentioned polyimide solution to form a via hole.

Next, after forming a copper thin film layer over the entire bottom surface using the electroless copper plating described above, a layer of about 20 μm is applied to the entire bottom surface using the electrolytic copper plating described above.
A copper layer of m was formed. PMER-HC40 on this copper layer
After drying, 200 mJ of ultraviolet rays were applied through a photomask having a hole pattern excluding the via holes used in Example 3, and the resist was developed to obtain a predetermined resist pattern. , dried.

Next, the exposed copper layer on the bottom side was dissolved with the aforementioned copper chloride solution to expose the polyimide resin, and the remaining resist was removed.

The exposed polyimide was melted under the same melting conditions as described above to form a device hole, an OL8 hole, and a sprocket hole.

Furthermore, the organic resin film on the top surface was removed using FSR stripping solution, and the top surface had a predetermined lead and the bottom surface had a copper ground layer, and the upper and lower metal parts were electrically connected through via holes.
It was possible to obtain layer TAB.

The two-layer TAB thus obtained had a copper ground layer reliably formed on the bottom surface.

Example 12 (A-C/B) A polyimide resin film similar to that in Example 1 was used as a starting material, and copper layers each having a thickness of 0.25 μm were formed on both sides by sputtering. Using a substrate in which the thickness of the underlying copper layer on the upper surface was adjusted to 1 μm and the thickness of the underlying copper layer on the lower surface was adjusted to 2 μm by plating,
When each treatment was carried out in the same manner as in Example 11, a two-layer TAB could be obtained in the same manner as in Example 11.

Example 13 (B-A-A) Using the same polyimide resin film as in Example 1 as a starting material as a base, both sides of the base were electroless copper plated to a thickness of about 0.2 μm using the electroless copper plating described above. After forming the film, a copper layer with a thickness of 35 μm was formed on the upper surface and a base copper layer with a thickness of 2 μm on the lower surface by the electrolytic copper plating described above.

Next, PHER-HC40 was applied to the copper layer on the upper and lower surfaces using a bar coater to a thickness of approximately 5 μm, and after drying at 70°C for 30 minutes, the resist layer on the upper surface was coated using Example 1. A photomask in which the black and white of the lead pattern used was inverted was brought into close contact with the resist surface and irradiated with 200 mJ of ultraviolet rays, and a photomask having the via hole pattern used in Example 1 was brought into close contact with the lower resist layer and 200 mJ was applied. Exposure was performed by irradiating ultraviolet rays.

Next, remove the resist on both sides at 25°C using P14ER developer.
After developing for 2 minutes at 100° C. to obtain a predetermined AR pattern, a drying process was performed at 110° C. for 30 minutes.

Next, the lower surface side was immersed in the aforementioned copper chloride solution at 50°C for 3 minutes to dissolve the exposed underlying copper layer, and the sumo wrestler side was immersed in the aforementioned copper chloride solution at 50°C for 20 minutes. A lead having a thickness of about 35 μm was formed by performing the treatment for a minute.

Thereafter, the resist on both sides was removed, and then the entire upper surface of the substrate was coated with an organic resin film that was resistant to FSR.

Next, the exposed portion of the polyimide resin on the lower surface of the substrate was dissolved using the aforementioned polyimide solution to form a via hole.

After that, a copper thin film layer was formed over the entire bottom surface by the above-mentioned electroless copper plating, and then P) fER-HC600 was applied for about 20 minutes.
It was coated to the thickness of Jim using a bar coater, dried at 70°C for 30 minutes, then applied with a photomask having a hole pattern excluding the via holes used in Example 1, irradiated with 400 mJ of ultraviolet rays, and developed to form the desired shape. After obtaining the resist pattern, it was dried.

Next, electrolytic copper plating is applied to the exposed copper layer on the bottom surface by approximately 2.
After forming a 0 μm copper ground layer, the remaining resist was removed and the copper layer under the lower resist pattern was dissolved and removed using the aforementioned copper chloride solution to expose the polyimide resin. The approximately 20 μm previously formed by this dissolution process
The copper layer had been reduced to about 11 μm. The exposed polyimide was melted under the same melting conditions as described above to form device holes, 018 holes, and sprocket holes.

Furthermore, the organic resin film on the top surface was removed at 70°C using FSR stripping solution.
15 minutes of treatment to remove the peel and have a predetermined lead on the top surface and a copper ground metal layer on the bottom surface,
Two-layer TA with upper and lower metal parts electrically connected through via holes
I was able to get a B.

The two-layer TAB thus obtained had a copper ground layer reliably formed on the bottom surface.

Example 14 (B-A-A) A polyimide resin film similar to that of Example 1 was used as a starting material, and copper layers each having a thickness of 0.25 μm were formed on both sides by sputtering, and electrolytic copper was further applied. Example 1 was performed using a substrate in which the thickness of the copper layer on the upper surface was adjusted to 35 μm and the thickness of the underlying copper layer on the lower surface was adjusted to 2 μm.
When each process was performed in the same manner as in Example 13,
A two-layer TAB could be obtained in the same manner.

Example 15 (B-A-B) Using the same polyimide resin film as in Example 1 as a starting material and forming an electroless copper plating film on both sides of the base by the electroless copper plating described above, further The electrolytic copper plating described above was used to form a 35 μm thick copper layer on the top surface and a 2 μm thick base copper layer on the bottom surface.

Next, apply P) IER-HC40 on the copper layer on the upper and lower surfaces of the substrate.
After coating to a thickness of about 5 μm and drying, the photomask having the lead pattern used in Example 13 was brought into close contact with the resist surface on the upper resist layer, and 200 mJ of ultraviolet rays were irradiated to remove the resist on the lower surface. A photomask having the via hole pattern used in Example 1 was brought into close contact with the layer, and 200 mJ of ultraviolet rays were irradiated for exposure.

Next, the resists on both sides were developed to obtain predetermined TAB patterns, and then dried.

Next, on the lower side, the exposed copper base layer was dissolved using the aforementioned copper chloride solution, and on the - sumo wrestler side, a lead with a thickness of about 35 μm was formed using the copper chloride solution.

Thereafter, the resists on both sides were removed, and then the entire upper surface of the substrate was covered with an organic resin film made of FSR.

Next, the exposed portion of the polyimide resin on the lower surface of the substrate was dissolved using the polyimide solution described above to form a via hole.

Thereafter, a copper thin film layer was formed over the entire lower surface by the above-mentioned electroless copper plating, and then a copper layer of about 20 μm was formed over the entire lower surface by the above-mentioned electrolytic copper plating. PIER− on this copper layer
After applying IC40 to a thickness of approximately 5 μm and drying, a photomask having a hole pattern excluding via holes used in Example 3 was applied, irradiated with 200 mJ of ultraviolet rays, and processed at 25° C. using the developer described above. After processing for 3 minutes, 110
It was dried at ℃ for 30 minutes to obtain a predetermined resist pattern.

Next, the copper chloride solution described above was treated at 50° C. for 15 minutes to dissolve the exposed copper layer on the bottom surface and expose the polyimide resin, and then the remaining resist was removed.

The exposed polyimide was melted under the above-mentioned melting conditions to form a device hole, an OL8 hole, and a sprocket hole.

Furthermore, the organic resin film on the top surface was removed at 10°C using FSR stripping solution.
15 minutes of treatment to remove the peel and have a predetermined lead on the top surface and a copper ground metal layer on the bottom surface,
Two-layer TA with upper and lower metal parts electrically connected through via holes
I was able to get a B.

The two-layer TAB thus obtained had a copper ground layer reliably formed on the bottom surface.

Example 16 (B-A-B) A polyimide resin film similar to that of Example 1 was used as a starting material, and copper layers each having a thickness of 0.25 μm were formed on both sides by sputtering, and electrolytic copper was further applied. Using a substrate in which the thickness of the copper layer on the upper surface was adjusted to 35 μm and the thickness of the underlying copper layer on the lower surface to 2 μm by plating, each treatment was performed in the same manner as in Example 15. Similarly, a two-layer AR was obtained.

Example 17 (B-B-A) Using the same polyimide resin film as in Example 1 as a base material as a starting material, an electroless copper plating film of about 0.2 μm was formed on both sides of the base by the electroless copper plating described above. After forming, the thickness of the copper layer on the top surface is increased to 3.
It was set to 5 μm.

Then apply P) IER-HC40 on the copper layer on the top and bottom surfaces.
After drying, the top resist layer was irradiated with 200 mJ of ultraviolet rays while the photomask having the lead pattern used in Example 13 was brought into close contact with the resist surface. A photomask having the via hole pattern used in Example 5 was brought into close contact with the layer, and 200 mJ of ultraviolet rays were irradiated for exposure.

Next, the resists on both sides were developed to obtain a predetermined TAB pattern, and then a drying process was performed.

Next, on the upper surface side, a lead having a thickness of about 35 μm was formed using the above-mentioned copper chloride solution. On the other hand, the lower surface side was electrolytically plated using the electroplating solution described above at a current density of 2 A/6 m2 for 13 minutes to adjust the thickness of the copper layer on the lower surface to about 3 .mu.m.

Thereafter, the resists on both sides were removed, and then the entire upper surface of the substrate was coated with an organic resin film made of FSR.

The lower surface side was immersed in the aforementioned copper chloride solution at 50° C. for 30 seconds to dissolve the base copper layer under the resist pattern and expose the polyimide.

Next, the exposed portion of the polyimide resin on the lower surface of the substrate was dissolved using the aforementioned polyimide solution to form a via hole.

After that, after forming a copper thin film layer over the entire bottom surface using the above-mentioned electroless copper plating, PHER-HC600 was coated with about 20μ
After coating to a thickness of m and drying, a photomask having a hole pattern excluding via holes used in Example 1 was applied, irradiated with 400 mJ of ultraviolet rays, and developed to obtain a predetermined resist pattern. Dry.

Next, electrolytic copper plating is applied to the exposed copper layer on the bottom surface by approximately 2.
After forming a 0 μm copper ground layer, the residual resist was removed and the underlying copper layer under the resist pattern on the lower surface was dissolved and removed using the aforementioned copper chloride solution to expose the polyimide resin. Approximately 20% of the previously formed
The μm copper layer had been reduced to about 17 μm.

The exposed polyimide was melted under the same melting conditions as described above to form device holes, OLB holes, and sprocket holes.

Furthermore, the organic resin film on the top surface was removed using FSR stripping solution, and the two-layer T had a predetermined lead on the top surface, a copper ground layer on the bottom surface, and the upper and lower metal parts were electrically connected through via holes.
I was able to get AB.

The two-layer TAB thus obtained had a copper ground layer reliably formed on the bottom surface.

Example 18 (B-B-A) A polyimide resin film similar to that of Example 1 was used as a starting material as a base material, and copper layers each having a thickness of 0.25 μm were formed on both sides by sputtering, and electrolytic copper was further applied. Using a substrate in which the thickness of the copper layer on the upper surface was adjusted to 35 μm by plating, each treatment was performed in the same manner as in Example 17, and a two-layer TAB could be obtained in the same manner as in Example 17.

Example 19 (B B/B) Using the same polyimide resin film as in Example 1 as a starting material as a substrate, electroless copper plating coating of about 0.2 μm was applied to both sides of the substrate by the above-mentioned electroless copper plating. After forming, the thickness of the copper layer on the top surface is increased to 35 mm using the above-mentioned electrolytic copper plating.
It was set as μm.

Next, PHER-HC40 is applied to a thickness of approximately 5 μm on the copper layer on the upper and lower surfaces, and after drying, a photomask having the lead pattern used in Example 13 is attached to the upper resist layer on the resist surface. Then, 200 mJ of ultraviolet rays were irradiated, and the photomask having the via hole pattern used in Example 5 was brought into close contact with the lower resist layer.
Exposure was performed by irradiating 00 mJ of ultraviolet light.

Next, the resists on both sides were developed to obtain a predetermined TAB pattern, and then a drying process was performed.

Next, on the upper surface side, a lead having a thickness of about 35 μm was formed using the above-mentioned copper chloride solution. On the other hand, the thickness of the underlying copper layer on the lower surface side was adjusted to about 3 μm by electroplating as described above.

Thereafter, the resists on both sides were removed, and then the entire upper surface of the substrate was coated with an organic resin film made of FSR.

On the lower surface side, the copper base layer under the resist pattern was dissolved with the aforementioned copper chloride solution to expose the polyimide.

Next, the exposed portion of the polyimide resin on the lower surface of the substrate was dissolved using the aforementioned polyimide solution to form a via hole.

Thereafter, a copper thin film layer was formed over the entire lower surface by the above-mentioned electroless copper plating, and then a copper layer of about 20 μm was formed over the entire lower surface by the above-mentioned electrolytic copper plating. PHER-
After applying HC40 to a thickness of approximately 5 μm and drying, a photomask having a hole pattern excluding via holes used in Example 3 was applied, and after irradiation with 200 mJ of ultraviolet rays, development was performed to obtain a predetermined resist pattern. After that, it was dried.

Next, dissolve the exposed copper layer on the bottom surface with the aforementioned copper chloride solution,
After exposing the polyimide resin, the remaining resist was removed.

The exposed polyimide was melted under the above-mentioned melting conditions to form a device hole, an OL8 hole, and a sprocket hole.

Furthermore, the organic resin film on the top surface was removed using FSR stripping solution, and the two-layer T had a predetermined lead on the top surface, a copper ground layer on the bottom surface, and the upper and lower metal parts were electrically connected through via holes.
I was able to get AB.

The two-layer TAB thus obtained had a copper ground layer reliably formed on the bottom surface.

Example 20 (B-B-B) A polyimide resin film similar to that of Example 1 was used as a starting material as a base material, and copper layers each having a thickness of 0.25 μm were formed on both sides by sputtering, and electrolytic copper was further applied. Using a substrate in which the thickness of the copper layer on the upper surface was adjusted to 35 μm by plating, each treatment was performed in the same manner as in Example 19, and a two-layer TAB could be obtained in the same manner as in Example 19.

Example 21 (B-C-A) Using the same polyimide resin film as in Example 1 as a starting material as a substrate, an electroless copper plating film of about 0.2 μm was formed on both sides of the substrate by the above-mentioned electroless copper plating. After that, electrolytic copper plating was further performed as described above to make the thickness of the copper layer on the upper surface 35 μm.

Next, PHER, HC40 is applied to a thickness of about 5 μm on the copper layer on the upper and lower surfaces, and after drying, a photomask having the lead pattern used in Example 13 is attached to the upper resist layer on the resist surface. Then, 200 mJ of ultraviolet rays were irradiated, and the photomask having the via hole pattern used in Example 1 was brought into close contact with the lower resist layer.
Exposure was performed by irradiating 00 mJ of ultraviolet light.

Next, the resists on both sides were developed to obtain a predetermined TAB pattern, and then dried.

Next, the lower side was immersed in the aforementioned copper chloride solution at 50°C for 1 minute to dissolve the exposed underlying copper layer, and the - sumo wrestler side was immersed in the copper chloride solution to form a lead approximately 35 μm thick. did.

Thereafter, the resists on both sides were removed, and then the entire upper surface of the substrate was coated with an organic resin film made of FSR.

Next, the entire lower surface was electrolytically plated as described above so that the thickness of the underlying copper layer pattern on the lower surface of the substrate was approximately 3 μm.

Next, the exposed portion of the polyimide resin on the lower surface of the substrate was dissolved with the above-mentioned polyimide solution to form a via hole.

After that, after forming a copper thin film layer over the entire bottom surface using the above-mentioned electroless copper plating, PHER-HC600 was coated with about 20μ
After coating to a thickness of m and drying, a photomask having a hole pattern excluding via holes used in Example 1 was applied, irradiated with 400 mJ of ultraviolet rays, and developed to obtain a predetermined resist pattern. Dry.

Next, electrolytic copper plating is applied to the exposed copper layer on the bottom surface by approximately 2.
After forming a 0 μm copper ground layer, the remaining resist was removed, and the copper layer under the lower resist pattern was dissolved and removed using the aforementioned copper chloride solution to expose the polyimide. As a result of this melting operation, the previously formed copper layer of about 20 μm was reduced to about 17 μm. The exposed polyimide was melted under the above-mentioned melting conditions to form a device hole, an OL8 hole, and a sprocket hole.

Furthermore, the organic resin film on the top surface was removed using FSR stripping solution, and the two-layer T had a predetermined lead on the top surface, a copper ground layer on the bottom surface, and the upper and lower metal parts were electrically connected through via holes.
I was able to get AB.

The two-layer TAB thus obtained had a copper ground layer reliably formed on the bottom surface.

Example 22 (B, C, A) A polyimide resin film similar to that of Example 1 was used as a starting material, and copper layers each having a thickness of 0.25 μm were formed on both sides by sputtering, and electrolytic copper was further applied. Using a substrate in which the thickness of the copper layer on the top surface was adjusted to 35 μm by plating, each treatment was performed in the same manner as in Example 21, and a two-layer TAB could be obtained in the same manner as in Example 21.

Example 23 (B-C-B) Using the same polyimide resin film as in Example 1 as a base material as a starting material, an electroless copper plating film of about 0.2 μm was formed on both sides of the base by the above-mentioned electroless copper plating. After forming, the thickness of the copper layer on the top surface is increased to 35 mm using the above-mentioned electrolytic copper plating.
It was set as μm.

Next, PHER, HC40 was applied to a thickness of about 5 μm on the copper layer on the upper and lower surfaces, and after drying, a photomask having the lead pattern used in Example 13 was applied to the upper resist layer on the resist surface. The photomask having the via hole pattern used in Example 1 was brought into close contact with the resist layer on the lower surface and irradiated with 200 mJ of ultraviolet rays for exposure.

Next, the resists on both sides were developed to obtain a predetermined TAB pattern, and then a drying process was performed.

Next, on the lower side, the exposed base copper layer was dissolved with the above-mentioned copper chloride solution, and on the - sumo wrestler side, leads with a thickness of about 35 μm were formed using the copper chloride solution.

Thereafter, the resists on both sides were removed, and then the entire upper surface of the substrate was coated with an organic resin film made of FSR.

Next, the entire lower surface was electrolytically plated as described above so that the thickness of the underlying copper layer pattern on the lower surface of the substrate was approximately 3 μm.

Next, the exposed portion of the polyimide resin on the lower surface of the substrate was dissolved using the aforementioned polyimide solution to form a via hole.

Thereafter, a copper thin film layer was formed over the entire lower surface by the above-mentioned electroless copper plating, and then a copper layer of about 20 μm was formed over the entire lower surface by the above-mentioned electrolytic copper plating. PMER on this copper layer,
HC40 was applied to a thickness of approximately 5 μm, and after drying, a photomask having a hole pattern excluding via holes used in Example 3 was applied, and after irradiation with 200 mJ of ultraviolet rays, development was performed to obtain a predetermined resist pattern. After that, it was dried.

Next, the exposed copper layer on the bottom surface was dissolved with the aforementioned copper chloride solution to expose the polyimide resin, and then the remaining resist was removed. The exposed polyimide is dissolved under the above-mentioned dissolution conditions,
A device hole, OL8 hole, and sprocket hole were formed.

Furthermore, the organic resin film on the top surface is removed using FSRill syneresis to obtain a two-layer TAB with a predetermined lead on the top surface, a copper ground layer on the bottom surface, and conduction between the upper and lower metal parts through via holes. was completed.

The two-layer TAB thus obtained had a copper ground layer reliably formed on the bottom surface.

Example 24 (B-C・B) As a starting material, a polyimide resin film similar to that in Example 1 was used as a substrate, and a copper layer of 0.25 μm thick was formed on both sides by sputtering, and further electrolytic copper was added. Using a substrate in which the thickness of the copper layer on the upper surface was adjusted to 35 μm by plating, each treatment was performed in the same manner as in Example 23, and a two-layer TAB could be obtained in the same manner as in Example 23.

(Effect of the invention) When using the method for manufacturing a two-layer TAB of the present invention, the two-layer TAB
It can be said that this is an industrially excellent invention because it is possible to reliably form a ground metal layer that is electrically conductive to the lead on the opposite side of the lead without impairing the original performance of B.

[Brief explanation of drawings]

FIG. 1 is a process diagram showing the manufacturing process in the method for manufacturing a two-layer TAB of the present invention, FIGS. 2(a) and (b), and 3.
Figures (a) and (b) are explanatory diagrams showing the outline state of the substrate in the order of steps in the manufacturing method of two-layer TAB when the semi-additive method and subtractive method are respectively adopted as the lead forming method. 2 obtained by the present invention
A plan view of the appearance of layer TAB, FIG. 5 is a plan view showing an example of a photomask having a lead pattern formed on the upper surface of the substrate, and FIGS. 6 and 7 have a via hole pattern formed on the lower surface of the substrate. FIGS. 8 and 9 are plan views showing an example of a photomask and its inverted state. FIGS. 8 and 9 are plan views of an example of a photomask having a hole pattern of various predetermined holes other than via holes and its inverted state. DESCRIPTION OF SYMBOLS 1...Top metal layer, 2...Bottom metal layer, 3...Insulating resin base, 4...Top resist layer, 5...Bottom resist layer, 6...Top resist pattern, 7 ...
Bottom resist pattern, 8... Lead, 9... Organic resin coating, 10... Metal layer pattern, 11... Via hole, 12... Metal thin film layer, 13... Bottom resist layer (again) , 14... Bottom resist pattern (again),
15...Device hole, 16...OLB hole,
17... Sprocket hole, 18... Ground metal layer. 2-layer TAB manufacturing process diagram

Claims (10)

[Claims] (1) The base is an insulating resin film with metal layers formed on both sides without using an adhesive, and after forming a photosensitive resist layer on the metal layers on both sides of the base, the resist layer on the top surface of the base is A photomask mainly having a predetermined lead pattern is applied, and a photomask mainly having a predetermined via hole pattern is applied to the resist layer on the lower surface of the substrate, and after irradiation with light, the resists on both sides are developed, and each side of the substrate is coated with a photomask. A step of forming a resist pattern with a shape, a step of forming leads on the upper surface of the substrate according to the resist pattern formed on the upper surface of the substrate, and a step of melting the metal layer in the portion corresponding to the via hole of the lower metal layer according to the resist pattern formed on the lower surface of the substrate. After exposing the insulating resin part, melting the exposed part of the insulating resin to form a predetermined via hole, forming a metal thin film layer on the lower surface of the base after the via hole is formed, and then forming a metal thin film layer on the metal thin film layer. A photosensitive resist is again formed on the resist, a photomask having various predetermined hole patterns except via holes is applied on the resist, irradiated with light, and developed to form a resist pattern on the lower surface of the substrate. A step of forming a ground metal layer over the entire bottom surface of the base so that portions of the insulating resin on the bottom surface corresponding to various predetermined holes other than via holes are exposed, and exposed portions of the insulating resin corresponding to various holes. A method for producing a two-layer TAB comprising the steps of dissolving and removing the TAB to form various holes other than via holes on the lower surface of the substrate. (2) To form the leads on the top surface of the substrate, a metal plating layer is deposited by electroplating on the exposed metal layer according to the resist pattern formed on the top surface of the substrate to form a lead preform. 2. The method for manufacturing a two-layer TAB according to claim 1, which is carried out by dissolving and removing the remaining metal layer. (3) The leads on the top surface of the substrate are formed by etching the exposed metal layer according to a resist pattern formed on the top surface of the substrate, and then dissolving and removing the resist on the non-etched metal layer. Method for manufacturing TAB. (4) To form a predetermined via hole in the insulating resin substrate, the exposed metal layer is etched according to the resist pattern formed on the bottom surface of the substrate to expose the insulating resin portion, and then the resist on the bottom surface of the substrate is removed. 4. The method for manufacturing a two-layer TAB according to claim 1, wherein the method is carried out by dissolving and removing exposed portions of the insulating resin. (5) To form a predetermined via hole in an insulating resin substrate, a metal plating layer is formed by electroplating on the exposed metal layer according to a resist pattern formed on the bottom surface of the substrate to form a metal pattern, and then a resist and a resist are formed. Claim 1: The method is carried out by dissolving and removing the underlying metal layer and thereby dissolving and removing the exposed insulating resin.
4. A method for manufacturing a two-layer TAB according to any one of items 3 to 3. (6) To form a predetermined via hole in the insulating resin substrate, the exposed metal layer is etched according to the resist pattern formed on the bottom surface of the substrate to expose the insulating resin portion, and then the resist pattern on the bottom surface of the substrate is removed and the exposed metal layer is exposed. The method for manufacturing a two-layer TAB according to any one of claims 1 to 3, wherein a metal plating layer is laminated by electroplating on the metal layer, and an exposed portion of the insulating resin is dissolved and removed. (7) To form a ground metal layer over the entire bottom surface of the substrate excluding various holes other than via holes, a metal plating layer is laminated by electroplating on the exposed metal thin film layer according to the resist pattern re-formed on the bottom surface of the substrate. 7. The method for manufacturing a two-layer TAB according to any one of claims 1 to 6, further comprising dissolving and removing the resist, and dissolving and removing the metal thin film layer and the metal layer that were under the resist. (8) To form a ground metal layer on the entire bottom surface of the substrate excluding various holes other than via holes, after laminating a metal plating layer by electroplating on the metal thin film layer on the bottom surface of the substrate, the ground metal layer is formed again on the bottom surface of the substrate. 7. The process is carried out by dissolving and removing the metal plating layer exposed in accordance with the formed resist pattern, the metal thin film layer and the metal layer existing thereunder, and further dissolving and removing the remaining resist. The method of manufacturing the two-layer TAB described. (9) Various holes other than via holes are formed by forming a ground metal layer on the lower surface of the base and dissolving and removing the exposed insulating resin.
A method for manufacturing a two-layer TAB according to any one of the above. (10) The method for manufacturing a two-layer TAB according to any one of claims 1 to 9, wherein the entire upper surface of the substrate is covered with an organic resin film layer from after the lead is formed until the completion of the formation of the ground metal.