JPH03235401A - Terminal for ultrahigh frequency - Google Patents

Abstract

PURPOSE:To increase packaging density, and to realize the miniaturization and the cost reduction of a device by providing a couple pattern which is formed at right angles to the tip of a microstrip line and making an ultrahigh frequency band signal pass through and blocks a DC component at the tip of the micro strip line patterned on a ceramic base on whose back a conductor layer is formed. CONSTITUTION:The ceramic base 20A is the ceramic base on whose back the conductor layer 10A is formed, and the input/output pattern 30A of the mircostrip pattern is patterned on the ceramic base 20A. The couple pattern 30B formed at right angles to the tip of the input/output pattern and to let the ultrahigh frequency band signal pass through and blocks the DC component is provided at the tip of the input/output pattern 30A. A ceramic layer 20B is sintered on the input/output pattern 30A and the couple pattern 30B, and besides, the conductor layer 10B is formed on the ceramic layer 20B. The ceramic base 20A is held by a metallic wall 40. As for the ultrahigh frequency band signal inputted from the input/output pattern 30A of one side, only the ultrahigh frequency band signal passes through, and is outputted from the input/ output pattern 30A of the other side, and the DC component is blocked by the couple pattern 30B.

Description

[Detailed Description of the Invention] [Summary] The present invention relates to an ultra-high frequency terminal that blocks electrical direct current components and passes ultra-high frequency band signals.The purpose of this invention is to provide a small and inexpensive ultra-high frequency terminal. A ceramic substrate with a conductor layer formed thereon, a microstrip line input/output pattern patterned on the ceramic substrate, and a couple pattern formed at the tip of the input/output pattern that passes ultra-high frequency band signals but blocks direct current components; The device includes a ceramic layer sintered on the input/output pattern and the couple pattern, a conductor layer formed on the ceramic layer, and a metal wall that holds the ceramic substrate.

[Industrial application field]

The present invention relates to an ultra-high frequency terminal that blocks electrical direct current components and allows ultra-high frequency band signals to pass.

For example, when an ultra-high frequency device composed of various semiconductor devices and distributed constant circuits is mounted in a case that requires airtightness, DC components are blocked at the input and output of this device, and the necessary ultra-high frequency It is necessary to pass only high frequency bands.

There is a need for a small and inexpensive ultra-high frequency terminal that blocks such direct current components and allows only ultra-high frequency band signals to pass.

[Conventional technology]

FIG. 4-A is a diagram illustrating a conventional hermetic glass terminal, and FIG. 4-B is a diagram illustrating another conventional balanced microstrip line.

Figure 4-A shows a hermetic glass terminal with a conductor 30
It consists of a hermetic glass 50 that insulates C and a metal wall 40A that supports it.

Figure 4-B is a balanced microstrip line,
It consists of a conductor pattern 30D formed in a sandwich structure with a ceramic substrate 20A having a conductor layer 10A formed on its back surface.

For both the hermetic glass terminal in Figure 4-A and the balanced microstrip line in Figure 4-B, the input and output are connected by a single conductor 30C or 30D, and when these are used as input/output terminals, Both high frequency band signals and DC components are passed through.

Therefore, when passing only ultra-high frequency band signals and blocking direct current components, a capacitor is connected in series to the above-mentioned terminals.

[Problem to be solved by the invention]

Ultra-high frequency circuits are small circuits because their frequencies are high. Therefore, when an ultra-high frequency circuit is housed in an airtight housing and is input/output using the terminals shown in the conventional example above, the volume of the capacitor for blocking the DC component is It will occupy a large proportion and the packaging density will decrease.

Furthermore, since the frequency used is high, the lead wire of the capacitor acts as an inductance, which may affect the characteristics of the device.

An object of the present invention is to provide a small and inexpensive ultra-high frequency terminal.

[Means to solve the problem]

FIG. 1 shows a detailed illustration of the invention.

In FIG. 1, (the stem is a top view, (b) is a front view, and (C) is a cross-sectional view.

20A in the principle block diagram of the present invention shown in FIG. 1 is a ceramic substrate with a conductor layer 10A formed on the back surface, and 3. OA is a microstrip input/output pattern patterned on the ceramic substrate 20A. , 30B is a couple pattern formed perpendicularly to the tip of the input/output pattern 30A to pass an ultra-high frequency band signal and block a DC component, and 20B is a couple pattern formed at right angles to the tip of the input/output pattern 30A
A is a ceramic layer sintered on the couple pattern 30B, 10B is a conductor layer formed on the ceramic layer 20B, 40 is a metal wall that holds the ceramic substrate 20A, and is equipped with such means. This is a means to solve this problem.

[For production]

The ultra-high frequency band signal input from one side of the input/output pattern 30A is coupled in the couple pattern 30B in an alternating current manner and insulated in terms of direct current, so only the ultra high frequency band signal is passed through, and the input/output signal from the other input/output pattern is It is possible to output from the pattern 30A and block the DC component.

- [Example] The gist of the present invention will be specifically explained below with reference to the example shown in FIGS. 2 and 3.

FIG. 2 is a diagram for explaining the present invention in detail, and FIG. 3 is a diagram for explaining an amplifier according to an embodiment of the present invention. Note that the same reference numerals indicate the same objects throughout the figures.

The embodiment of the present invention shown in FIG. 2 describes a ceramic substrate 20A with a conductor layer 10A (not shown) attached to the back surface, an input/output pattern 30A and a couple pattern 30B that are patterned on the ceramic substrate 20A. It is a diagram.

The width of the input/output pattern 30A is 0.25mm, the length is 0°68
5. The width of the couple pattern is 0.15, and the length is 0.6.
Three cabinets, input/output pattern 30A and couple pattern 30
B is connected in an L shape.

The gap between the couple patterns facing each other is 0.02 mm, and the pass band at this time is 37.5 to 39 GHz.

The input/output pattern 30A and the couple pattern 30B have a symmetrical structure, and the operation is the same regardless of whether the upper or lower side in FIG. 2 is an input terminal or an output terminal.

FIG. 3 shows an amplifier according to an embodiment of the invention, with housing I
Two rooms are provided in A, each containing 3.7 semiconductor devices.
A semiconductor circuit consisting of a distributed constant circuit 2.4.6.8 is mounted, and the ultra-high frequency terminal of the present invention is used for the input/output terminal 1.9 and the interstage connection terminal 5, and the Since no capacitor is required, high integration is possible, and since the terminal of the present invention operates as a filter, it is possible to improve the performance of the circuit.

〔Effect of the invention〕

According to the present invention as described above, it is possible to provide an ultra-high frequency terminal that blocks direct current components and allows only ultra-high frequency band signals to pass, is compact, has high packaging density, and is inexpensive.

[Brief explanation of drawings]

FIG. 1 is a diagram explaining the present invention in detail, FIG. 2 is a diagram explaining the invention in detail, FIG. 3 is a diagram explaining an amplifier according to an embodiment of the present invention, and FIG. 4-A is a conventional example. Figure 4-B is a diagram illustrating another conventional balanced type microstrip line, respectively. In the figure, 10A and 10B are conductor layers, 20A is a ceramic substrate, 20B is a ceramic layer, 30A is an input/output pattern, 30B is a couple pattern, 30C is a conductor, 30D is a center conductor, 40.40A is a metal wall, and 50 is a hermetic Glass, IA is a housing, l, 5.9 is an ultra-high frequency terminal, 2.4.6.8 is a distributed constant circuit, and 3.7 is a semiconductor device. (b) (C) Detailed drawings explaining the present invention Fig. 1 Fig. 3 Fig. 2 Book 4-A explaining the conventional hermetic glass terminal
Figures 4-B and other diagrams illustrating conventional balanced microstrip lines

Claims (1)

[Claims] An ultra-high frequency terminal that blocks electrical DC components and passes ultra-high frequency band signals, comprising a ceramic substrate (2
0A) and the microstrip line input/output pattern (30A) patterned on the ceramic substrate (20A).
and a couple pattern (30B) formed perpendicularly to the tip of the input/output pattern (30A) to pass an ultra-high frequency band signal and block a DC component;
A), a ceramic layer (20B) sintered on the couple pattern (30B), and a conductor layer (10B) formed on the ceramic layer (20B).
B), and a metal wall (40A) that holds the ceramic substrate (20A).
) A terminal for ultra-high frequencies.