JPH03235395A - Manufacture of copper through hole printed wiring board - Google Patents
Manufacture of copper through hole printed wiring boardInfo
- Publication number
- JPH03235395A JPH03235395A JP2963190A JP2963190A JPH03235395A JP H03235395 A JPH03235395 A JP H03235395A JP 2963190 A JP2963190 A JP 2963190A JP 2963190 A JP2963190 A JP 2963190A JP H03235395 A JPH03235395 A JP H03235395A
- Authority
- JP
- Japan
- Prior art keywords
- copper
- resist film
- alkylbenzimidazole
- benzimidazole
- etching
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 title claims abstract description 27
- 229910052802 copper Inorganic materials 0.000 title claims abstract description 27
- 239000010949 copper Substances 0.000 title claims abstract description 27
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 14
- 238000000034 method Methods 0.000 claims abstract description 29
- 238000005530 etching Methods 0.000 claims abstract description 23
- 239000000243 solution Substances 0.000 claims abstract description 12
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 10
- 150000001875 compounds Chemical class 0.000 claims abstract description 9
- 125000000217 alkyl group Chemical group 0.000 claims abstract description 8
- 239000007864 aqueous solution Substances 0.000 claims abstract description 8
- -1 2-alkylbenzimidazole Chemical class 0.000 claims abstract description 6
- 239000007788 liquid Substances 0.000 claims abstract description 6
- 150000007522 mineralic acids Chemical class 0.000 claims abstract description 6
- 150000007524 organic acids Chemical class 0.000 claims abstract description 6
- 239000000126 substance Substances 0.000 claims description 11
- DWYHDSLIWMUSOO-UHFFFAOYSA-N 2-phenyl-1h-benzimidazole Chemical compound C1=CC=CC=C1C1=NC2=CC=CC=C2N1 DWYHDSLIWMUSOO-UHFFFAOYSA-N 0.000 claims description 7
- 239000000203 mixture Substances 0.000 claims description 3
- 239000004480 active ingredient Substances 0.000 claims description 2
- 125000004432 carbon atom Chemical group C* 0.000 claims description 2
- 229910000831 Steel Inorganic materials 0.000 description 29
- 239000010959 steel Substances 0.000 description 29
- 238000007747 plating Methods 0.000 description 18
- 229910000679 solder Inorganic materials 0.000 description 8
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 6
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 6
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 6
- 229910000976 Electrical steel Inorganic materials 0.000 description 5
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 4
- 238000012545 processing Methods 0.000 description 4
- SMZOUWXMTYCWNB-UHFFFAOYSA-N 2-(2-methoxy-5-methylphenyl)ethanamine Chemical compound COC1=CC=C(C)C=C1CCN SMZOUWXMTYCWNB-UHFFFAOYSA-N 0.000 description 3
- NIXOWILDQLNWCW-UHFFFAOYSA-N 2-Propenoic acid Natural products OC(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 3
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 3
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 3
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 description 3
- 239000002253 acid Substances 0.000 description 3
- 238000005553 drilling Methods 0.000 description 3
- 238000007654 immersion Methods 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- LCPVQAHEFVXVKT-UHFFFAOYSA-N 2-(2,4-difluorophenoxy)pyridin-3-amine Chemical compound NC1=CC=CN=C1OC1=CC=C(F)C=C1F LCPVQAHEFVXVKT-UHFFFAOYSA-N 0.000 description 2
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- VZCYOOQTPOCHFL-OWOJBTEDSA-N Fumaric acid Chemical compound OC(=O)\C=C\C(O)=O VZCYOOQTPOCHFL-OWOJBTEDSA-N 0.000 description 2
- AEMRFAOFKBGASW-UHFFFAOYSA-N Glycolic acid Chemical compound OCC(O)=O AEMRFAOFKBGASW-UHFFFAOYSA-N 0.000 description 2
- LRHPLDYGYMQRHN-UHFFFAOYSA-N N-Butanol Chemical compound CCCCO LRHPLDYGYMQRHN-UHFFFAOYSA-N 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- PPBRXRYQALVLMV-UHFFFAOYSA-N Styrene Natural products C=CC1=CC=CC=C1 PPBRXRYQALVLMV-UHFFFAOYSA-N 0.000 description 2
- 150000007513 acids Chemical class 0.000 description 2
- WNLRTRBMVRJNCN-UHFFFAOYSA-N adipic acid Chemical compound OC(=O)CCCCC(O)=O WNLRTRBMVRJNCN-UHFFFAOYSA-N 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 229920001577 copolymer Polymers 0.000 description 2
- GHVNFZFCNZKVNT-UHFFFAOYSA-N decanoic acid Chemical compound CCCCCCCCCC(O)=O GHVNFZFCNZKVNT-UHFFFAOYSA-N 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- JVTAAEKCZFNVCJ-UHFFFAOYSA-N lactic acid Chemical compound CC(O)C(O)=O JVTAAEKCZFNVCJ-UHFFFAOYSA-N 0.000 description 2
- BDAGIHXWWSANSR-UHFFFAOYSA-N methanoic acid Natural products OC=O BDAGIHXWWSANSR-UHFFFAOYSA-N 0.000 description 2
- CHQMHPLRPQMAMX-UHFFFAOYSA-L sodium persulfate Substances [Na+].[Na+].[O-]S(=O)(=O)OOS([O-])(=O)=O CHQMHPLRPQMAMX-UHFFFAOYSA-L 0.000 description 2
- 238000005507 spraying Methods 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- VZCYOOQTPOCHFL-UHFFFAOYSA-N trans-butenedioic acid Natural products OC(=O)C=CC(O)=O VZCYOOQTPOCHFL-UHFFFAOYSA-N 0.000 description 2
- WRIDQFICGBMAFQ-UHFFFAOYSA-N (E)-8-Octadecenoic acid Natural products CCCCCCCCCC=CCCCCCCC(O)=O WRIDQFICGBMAFQ-UHFFFAOYSA-N 0.000 description 1
- HYZJCKYKOHLVJF-UHFFFAOYSA-N 1H-benzimidazole Chemical compound C1=CC=C2NC=NC2=C1 HYZJCKYKOHLVJF-UHFFFAOYSA-N 0.000 description 1
- CVJIEBDNQRFHOR-UHFFFAOYSA-N 2-(2,2-dimethylpropyl)-1h-benzimidazole Chemical compound C1=CC=C2NC(CC(C)(C)C)=NC2=C1 CVJIEBDNQRFHOR-UHFFFAOYSA-N 0.000 description 1
- GFNVUHUWRSKKGJ-UHFFFAOYSA-N 2-(2,2-dimethylpropyl)-4,5-dimethyl-1h-benzimidazole Chemical compound CC1=CC=C2NC(CC(C)(C)C)=NC2=C1C GFNVUHUWRSKKGJ-UHFFFAOYSA-N 0.000 description 1
- TVWPRUAVLQVBMP-UHFFFAOYSA-N 2-(2,2-dimethylpropyl)-4-methyl-1h-benzimidazole Chemical compound CC1=CC=CC2=C1N=C(CC(C)(C)C)N2 TVWPRUAVLQVBMP-UHFFFAOYSA-N 0.000 description 1
- LEJASIAHMIEQGC-UHFFFAOYSA-N 2-(2,4,6-trimethylphenyl)-1h-benzimidazole Chemical compound CC1=CC(C)=CC(C)=C1C1=NC2=CC=CC=C2N1 LEJASIAHMIEQGC-UHFFFAOYSA-N 0.000 description 1
- JDMRXHGBOJLTFX-UHFFFAOYSA-N 2-(4-methylphenyl)sulfonyl-1h-benzimidazole Chemical compound C1=CC(C)=CC=C1S(=O)(=O)C1=NC2=CC=CC=C2N1 JDMRXHGBOJLTFX-UHFFFAOYSA-N 0.000 description 1
- HITWHALOZBMLHY-UHFFFAOYSA-N 2-Butyl-1H-benzimidazole Chemical compound C1=CC=C2NC(CCCC)=NC2=C1 HITWHALOZBMLHY-UHFFFAOYSA-N 0.000 description 1
- USXMXTFULSFXKU-UHFFFAOYSA-N 2-butan-2-yl-1h-benzimidazole Chemical compound C1=CC=C2NC(C(C)CC)=NC2=C1 USXMXTFULSFXKU-UHFFFAOYSA-N 0.000 description 1
- MZCMDDMKXSIRJT-UHFFFAOYSA-N 2-butan-2-yl-4-methyl-1h-benzimidazole Chemical compound C1=CC=C2NC(C(C)CC)=NC2=C1C MZCMDDMKXSIRJT-UHFFFAOYSA-N 0.000 description 1
- FUSJJFOCAMAFEF-UHFFFAOYSA-N 2-butyl-4,5-dimethyl-1h-benzimidazole Chemical compound CC1=CC=C2NC(CCCC)=NC2=C1C FUSJJFOCAMAFEF-UHFFFAOYSA-N 0.000 description 1
- KWXMCOSRMGUVNJ-UHFFFAOYSA-N 2-butyl-4-methyl-1h-benzimidazole Chemical compound C1=CC=C2NC(CCCC)=NC2=C1C KWXMCOSRMGUVNJ-UHFFFAOYSA-N 0.000 description 1
- MJEUKYAKMPDPLE-UHFFFAOYSA-N 2-decyl-1h-benzimidazole Chemical compound C1=CC=C2NC(CCCCCCCCCC)=NC2=C1 MJEUKYAKMPDPLE-UHFFFAOYSA-N 0.000 description 1
- SWUVYYPXMOXAKO-UHFFFAOYSA-N 2-decyl-4,5-dimethyl-1h-benzimidazole Chemical compound CC1=CC=C2NC(CCCCCCCCCC)=NC2=C1C SWUVYYPXMOXAKO-UHFFFAOYSA-N 0.000 description 1
- BKNVYYNNVKEJBT-UHFFFAOYSA-N 2-decyl-4-methyl-1h-benzimidazole Chemical compound C1=CC=C2NC(CCCCCCCCCC)=NC2=C1C BKNVYYNNVKEJBT-UHFFFAOYSA-N 0.000 description 1
- QGFGLYOMJKJZIC-UHFFFAOYSA-N 2-dodecyl-1h-benzimidazole Chemical compound C1=CC=C2NC(CCCCCCCCCCCC)=NC2=C1 QGFGLYOMJKJZIC-UHFFFAOYSA-N 0.000 description 1
- YMKMULXAFFAUPG-UHFFFAOYSA-N 2-dodecyl-4,5-dimethyl-1h-benzimidazole Chemical compound CC1=CC=C2NC(CCCCCCCCCCCC)=NC2=C1C YMKMULXAFFAUPG-UHFFFAOYSA-N 0.000 description 1
- TVFUKKLDYCDOLF-UHFFFAOYSA-N 2-dodecyl-4-methyl-1h-benzimidazole Chemical compound C1=CC=C2NC(CCCCCCCCCCCC)=NC2=C1C TVFUKKLDYCDOLF-UHFFFAOYSA-N 0.000 description 1
- HBTSVVOLHPRTJA-UHFFFAOYSA-N 2-heptadecyl-1h-benzimidazole Chemical compound C1=CC=C2NC(CCCCCCCCCCCCCCCCC)=NC2=C1 HBTSVVOLHPRTJA-UHFFFAOYSA-N 0.000 description 1
- RPXHBUMILAWMFD-UHFFFAOYSA-N 2-heptadecyl-4,5-dimethyl-1h-benzimidazole Chemical compound CC1=CC=C2NC(CCCCCCCCCCCCCCCCC)=NC2=C1C RPXHBUMILAWMFD-UHFFFAOYSA-N 0.000 description 1
- MKLLVTVNDXUBND-UHFFFAOYSA-N 2-heptadecyl-4-methyl-1h-benzimidazole Chemical compound C1=CC=C2NC(CCCCCCCCCCCCCCCCC)=NC2=C1C MKLLVTVNDXUBND-UHFFFAOYSA-N 0.000 description 1
- NEAJEQHFCHSFBT-UHFFFAOYSA-N 2-heptyl-4,5-dimethyl-1h-benzimidazole Chemical compound CC1=CC=C2NC(CCCCCCC)=NC2=C1C NEAJEQHFCHSFBT-UHFFFAOYSA-N 0.000 description 1
- GGVHPTKHGMNOFO-UHFFFAOYSA-N 2-hexadecyl-1h-benzimidazole Chemical compound C1=CC=C2NC(CCCCCCCCCCCCCCCC)=NC2=C1 GGVHPTKHGMNOFO-UHFFFAOYSA-N 0.000 description 1
- MGADQDKCXKBNQB-UHFFFAOYSA-N 2-hexadecyl-4,5-dimethyl-1h-benzimidazole Chemical compound CC1=CC=C2NC(CCCCCCCCCCCCCCCC)=NC2=C1C MGADQDKCXKBNQB-UHFFFAOYSA-N 0.000 description 1
- KRFALOPYCASPJK-UHFFFAOYSA-N 2-hexadecyl-4-methyl-1h-benzimidazole Chemical compound C1=CC=C2NC(CCCCCCCCCCCCCCCC)=NC2=C1C KRFALOPYCASPJK-UHFFFAOYSA-N 0.000 description 1
- VIOYOJCZVPGTGV-UHFFFAOYSA-N 2-hexyl-4,5-dimethyl-1h-benzimidazole Chemical compound CC1=CC=C2NC(CCCCCC)=NC2=C1C VIOYOJCZVPGTGV-UHFFFAOYSA-N 0.000 description 1
- QCIHCRSQUDJZSI-UHFFFAOYSA-N 2-hexyl-4-methyl-1h-benzimidazole Chemical compound C1=CC=C2NC(CCCCCC)=NC2=C1C QCIHCRSQUDJZSI-UHFFFAOYSA-N 0.000 description 1
- YECSLYXTXWSKBO-UHFFFAOYSA-N 2-nonyl-1h-benzimidazole Chemical compound C1=CC=C2NC(CCCCCCCCC)=NC2=C1 YECSLYXTXWSKBO-UHFFFAOYSA-N 0.000 description 1
- IRMWQHINYNTMNS-UHFFFAOYSA-N 2-octyl-1h-benzimidazole Chemical compound C1=CC=C2NC(CCCCCCCC)=NC2=C1 IRMWQHINYNTMNS-UHFFFAOYSA-N 0.000 description 1
- ZXJQADBOFUIAFL-UHFFFAOYSA-N 2-pentadecyl-1h-benzimidazole Chemical compound C1=CC=C2NC(CCCCCCCCCCCCCCC)=NC2=C1 ZXJQADBOFUIAFL-UHFFFAOYSA-N 0.000 description 1
- OYGJENONTDCXGW-UHFFFAOYSA-N 2-pentyl-1h-benzimidazole Chemical compound C1=CC=C2NC(CCCCC)=NC2=C1 OYGJENONTDCXGW-UHFFFAOYSA-N 0.000 description 1
- RITUGMAIQCZEOG-UHFFFAOYSA-N 2-propan-2-yl-1h-benzimidazole Chemical compound C1=CC=C2NC(C(C)C)=NC2=C1 RITUGMAIQCZEOG-UHFFFAOYSA-N 0.000 description 1
- FBLJZPQLNMVEMR-UHFFFAOYSA-N 2-propyl-1h-benzimidazole Chemical compound C1=CC=C2NC(CCC)=NC2=C1 FBLJZPQLNMVEMR-UHFFFAOYSA-N 0.000 description 1
- ZQWHWRQRGKZTSE-UHFFFAOYSA-N 2-tert-butyl-1h-benzimidazole Chemical compound C1=CC=C2NC(C(C)(C)C)=NC2=C1 ZQWHWRQRGKZTSE-UHFFFAOYSA-N 0.000 description 1
- MGXMFEUZACAYNN-UHFFFAOYSA-N 2-tert-butyl-4,5-dimethyl-1h-benzimidazole Chemical compound CC1=CC=C2NC(C(C)(C)C)=NC2=C1C MGXMFEUZACAYNN-UHFFFAOYSA-N 0.000 description 1
- IRPJFDNQCGTROV-UHFFFAOYSA-N 2-tetradecyl-1h-benzimidazole Chemical compound C1=CC=C2NC(CCCCCCCCCCCCCC)=NC2=C1 IRPJFDNQCGTROV-UHFFFAOYSA-N 0.000 description 1
- OZRZZNNKEBHRGQ-UHFFFAOYSA-N 2-tridecyl-1h-benzimidazole Chemical compound C1=CC=C2NC(CCCCCCCCCCCCC)=NC2=C1 OZRZZNNKEBHRGQ-UHFFFAOYSA-N 0.000 description 1
- GFKNPGTWLJFDKJ-UHFFFAOYSA-N 2-undecyl-1h-benzimidazole Chemical compound C1=CC=C2NC(CCCCCCCCCCC)=NC2=C1 GFKNPGTWLJFDKJ-UHFFFAOYSA-N 0.000 description 1
- LQJBNNIYVWPHFW-UHFFFAOYSA-N 20:1omega9c fatty acid Natural products CCCCCCCCCCC=CCCCCCCCC(O)=O LQJBNNIYVWPHFW-UHFFFAOYSA-N 0.000 description 1
- MCVHNBMYUFDOHF-UHFFFAOYSA-N 4,5-dimethyl-2-(2,4,6-trimethylphenyl)-1h-benzimidazole Chemical compound CC1=CC(C)=CC(C)=C1C1=NC2=C(C)C(C)=CC=C2N1 MCVHNBMYUFDOHF-UHFFFAOYSA-N 0.000 description 1
- LSIFXAZCEPPYQL-UHFFFAOYSA-N 4,5-dimethyl-2-(2-methylpropyl)-1h-benzimidazole Chemical compound CC1=CC=C2NC(CC(C)C)=NC2=C1C LSIFXAZCEPPYQL-UHFFFAOYSA-N 0.000 description 1
- GTUXKBVECWUUAL-UHFFFAOYSA-N 4,5-dimethyl-2-(3-methylbutyl)-1h-benzimidazole Chemical compound CC1=CC=C2NC(CCC(C)C)=NC2=C1C GTUXKBVECWUUAL-UHFFFAOYSA-N 0.000 description 1
- ODSPTHUPILBDMB-UHFFFAOYSA-N 4,5-dimethyl-2-(4-methylpentyl)-1h-benzimidazole Chemical compound CC1=CC=C2NC(CCCC(C)C)=NC2=C1C ODSPTHUPILBDMB-UHFFFAOYSA-N 0.000 description 1
- XPMURNPOPNSKGB-UHFFFAOYSA-N 4,5-dimethyl-2-(4-methylphenyl)sulfonyl-1h-benzimidazole Chemical compound C1=CC(C)=CC=C1S(=O)(=O)C1=NC2=C(C)C(C)=CC=C2N1 XPMURNPOPNSKGB-UHFFFAOYSA-N 0.000 description 1
- KJFGGEUNRHAZIM-UHFFFAOYSA-N 4,5-dimethyl-2-nonyl-1h-benzimidazole Chemical compound CC1=CC=C2NC(CCCCCCCCC)=NC2=C1C KJFGGEUNRHAZIM-UHFFFAOYSA-N 0.000 description 1
- NPBGTTVDPLCGOM-UHFFFAOYSA-N 4,5-dimethyl-2-octyl-1h-benzimidazole Chemical compound CC1=CC=C2NC(CCCCCCCC)=NC2=C1C NPBGTTVDPLCGOM-UHFFFAOYSA-N 0.000 description 1
- PVNBDVIOYIKKMD-UHFFFAOYSA-N 4,5-dimethyl-2-pentadecyl-1h-benzimidazole Chemical compound CC1=CC=C2NC(CCCCCCCCCCCCCCC)=NC2=C1C PVNBDVIOYIKKMD-UHFFFAOYSA-N 0.000 description 1
- IWZHLBKBVXGKHO-UHFFFAOYSA-N 4,5-dimethyl-2-pentyl-1h-benzimidazole Chemical compound CC1=CC=C2NC(CCCCC)=NC2=C1C IWZHLBKBVXGKHO-UHFFFAOYSA-N 0.000 description 1
- PCOUWACMXULCTB-UHFFFAOYSA-N 4,5-dimethyl-2-phenyl-1h-benzimidazole Chemical compound N=1C2=C(C)C(C)=CC=C2NC=1C1=CC=CC=C1 PCOUWACMXULCTB-UHFFFAOYSA-N 0.000 description 1
- MLWWSZKEKXMDMU-UHFFFAOYSA-N 4,5-dimethyl-2-propyl-1h-benzimidazole Chemical compound CC1=CC=C2NC(CCC)=NC2=C1C MLWWSZKEKXMDMU-UHFFFAOYSA-N 0.000 description 1
- VXZDECQUWWPNFV-UHFFFAOYSA-N 4,5-dimethyl-2-tetradecyl-1h-benzimidazole Chemical compound CC1=CC=C2NC(CCCCCCCCCCCCCC)=NC2=C1C VXZDECQUWWPNFV-UHFFFAOYSA-N 0.000 description 1
- YNFCYTRCTCHEPF-UHFFFAOYSA-N 4,5-dimethyl-2-tridecyl-1h-benzimidazole Chemical compound CC1=CC=C2NC(CCCCCCCCCCCCC)=NC2=C1C YNFCYTRCTCHEPF-UHFFFAOYSA-N 0.000 description 1
- FUTCIOYEWRLDQQ-UHFFFAOYSA-N 4,5-dimethyl-2-undecyl-1h-benzimidazole Chemical compound CC1=CC=C2NC(CCCCCCCCCCC)=NC2=C1C FUTCIOYEWRLDQQ-UHFFFAOYSA-N 0.000 description 1
- OSWFIVFLDKOXQC-UHFFFAOYSA-N 4-(3-methoxyphenyl)aniline Chemical compound COC1=CC=CC(C=2C=CC(N)=CC=2)=C1 OSWFIVFLDKOXQC-UHFFFAOYSA-N 0.000 description 1
- GDNGGSVKUJWMEA-UHFFFAOYSA-N 4-methyl-2-(2,4,6-trimethylphenyl)-1h-benzimidazole Chemical compound CC1=CC(C)=CC(C)=C1C1=NC2=C(C)C=CC=C2N1 GDNGGSVKUJWMEA-UHFFFAOYSA-N 0.000 description 1
- VSQXQIRKVMGZTK-UHFFFAOYSA-N 4-methyl-2-(2-methylpropyl)-1h-benzimidazole Chemical compound C1=CC=C2NC(CC(C)C)=NC2=C1C VSQXQIRKVMGZTK-UHFFFAOYSA-N 0.000 description 1
- MRSHUBJFWZDVPA-UHFFFAOYSA-N 4-methyl-2-(4-methylpentyl)-1h-benzimidazole Chemical compound C1=CC=C2NC(CCCC(C)C)=NC2=C1C MRSHUBJFWZDVPA-UHFFFAOYSA-N 0.000 description 1
- JDXZAJQAIRHWRA-UHFFFAOYSA-N 4-methyl-2-(4-methylphenyl)sulfonyl-1h-benzimidazole Chemical compound C1=CC(C)=CC=C1S(=O)(=O)C1=NC2=C(C)C=CC=C2N1 JDXZAJQAIRHWRA-UHFFFAOYSA-N 0.000 description 1
- BGKOQGKVYNNKPY-UHFFFAOYSA-N 4-methyl-2-nonyl-1h-benzimidazole Chemical compound C1=CC=C2NC(CCCCCCCCC)=NC2=C1C BGKOQGKVYNNKPY-UHFFFAOYSA-N 0.000 description 1
- MQPHZWTUUJDTPP-UHFFFAOYSA-N 4-methyl-2-pentadecyl-1h-benzimidazole Chemical compound C1=CC=C2NC(CCCCCCCCCCCCCCC)=NC2=C1C MQPHZWTUUJDTPP-UHFFFAOYSA-N 0.000 description 1
- RHLAEPPYWAUPIL-UHFFFAOYSA-N 4-methyl-2-pentyl-1h-benzimidazole Chemical compound C1=CC=C2NC(CCCCC)=NC2=C1C RHLAEPPYWAUPIL-UHFFFAOYSA-N 0.000 description 1
- PCTHPRWIRUPGAC-UHFFFAOYSA-N 4-methyl-2-propan-2-yl-1h-benzimidazole Chemical compound C1=CC(C)=C2NC(C(C)C)=NC2=C1 PCTHPRWIRUPGAC-UHFFFAOYSA-N 0.000 description 1
- KKECAJNLCGRKJL-UHFFFAOYSA-N 4-methyl-2-propyl-1h-benzimidazole Chemical compound C1=CC(C)=C2NC(CCC)=NC2=C1 KKECAJNLCGRKJL-UHFFFAOYSA-N 0.000 description 1
- HMYGQLZIRJFZNR-UHFFFAOYSA-N 4-methyl-2-tetradecyl-1h-benzimidazole Chemical compound C1=CC=C2NC(CCCCCCCCCCCCCC)=NC2=C1C HMYGQLZIRJFZNR-UHFFFAOYSA-N 0.000 description 1
- ZQKWDAFMILJGAZ-UHFFFAOYSA-N 4-methyl-2-tridecyl-1h-benzimidazole Chemical compound C1=CC=C2NC(CCCCCCCCCCCCC)=NC2=C1C ZQKWDAFMILJGAZ-UHFFFAOYSA-N 0.000 description 1
- YNVMXYIPRINTOK-UHFFFAOYSA-N 4-methyl-2-undecyl-1h-benzimidazole Chemical compound C1=CC=C2NC(CCCCCCCCCCC)=NC2=C1C YNVMXYIPRINTOK-UHFFFAOYSA-N 0.000 description 1
- QSBYPNXLFMSGKH-UHFFFAOYSA-N 9-Heptadecensaeure Natural products CCCCCCCC=CCCCCCCCC(O)=O QSBYPNXLFMSGKH-UHFFFAOYSA-N 0.000 description 1
- 239000005632 Capric acid (CAS 334-48-5) Substances 0.000 description 1
- 229910021591 Copper(I) chloride Inorganic materials 0.000 description 1
- FEWJPZIEWOKRBE-JCYAYHJZSA-N Dextrotartaric acid Chemical compound OC(=O)[C@H](O)[C@@H](O)C(O)=O FEWJPZIEWOKRBE-JCYAYHJZSA-N 0.000 description 1
- 239000005642 Oleic acid Substances 0.000 description 1
- ZQPPMHVWECSIRJ-UHFFFAOYSA-N Oleic acid Natural products CCCCCCCCC=CCCCCCCCC(O)=O ZQPPMHVWECSIRJ-UHFFFAOYSA-N 0.000 description 1
- 229910019142 PO4 Inorganic materials 0.000 description 1
- OFOBLEOULBTSOW-UHFFFAOYSA-N Propanedioic acid Natural products OC(=O)CC(O)=O OFOBLEOULBTSOW-UHFFFAOYSA-N 0.000 description 1
- KDYFGRWQOYBRFD-UHFFFAOYSA-N Succinic acid Natural products OC(=O)CCC(O)=O KDYFGRWQOYBRFD-UHFFFAOYSA-N 0.000 description 1
- FEWJPZIEWOKRBE-UHFFFAOYSA-N Tartaric acid Natural products [H+].[H+].[O-]C(=O)C(O)C(O)C([O-])=O FEWJPZIEWOKRBE-UHFFFAOYSA-N 0.000 description 1
- 230000002378 acidificating effect Effects 0.000 description 1
- 239000001361 adipic acid Substances 0.000 description 1
- 235000011037 adipic acid Nutrition 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- YTLQFZVCLXFFRK-UHFFFAOYSA-N bendazol Chemical compound N=1C2=CC=CC=C2NC=1CC1=CC=CC=C1 YTLQFZVCLXFFRK-UHFFFAOYSA-N 0.000 description 1
- KDYFGRWQOYBRFD-NUQCWPJISA-N butanedioic acid Chemical compound O[14C](=O)CC[14C](O)=O KDYFGRWQOYBRFD-NUQCWPJISA-N 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- OXBLHERUFWYNTN-UHFFFAOYSA-M copper(I) chloride Chemical compound [Cu]Cl OXBLHERUFWYNTN-UHFFFAOYSA-M 0.000 description 1
- BERDEBHAJNAUOM-UHFFFAOYSA-N copper(I) oxide Inorganic materials [Cu]O[Cu] BERDEBHAJNAUOM-UHFFFAOYSA-N 0.000 description 1
- 229960004643 cupric oxide Drugs 0.000 description 1
- 229940045803 cuprous chloride Drugs 0.000 description 1
- KRFJLUBVMFXRPN-UHFFFAOYSA-N cuprous oxide Chemical compound [O-2].[Cu+].[Cu+] KRFJLUBVMFXRPN-UHFFFAOYSA-N 0.000 description 1
- 229940112669 cuprous oxide Drugs 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 235000019253 formic acid Nutrition 0.000 description 1
- 239000001530 fumaric acid Substances 0.000 description 1
- 235000011087 fumaric acid Nutrition 0.000 description 1
- 235000011167 hydrochloric acid Nutrition 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-M hydroxide Chemical compound [OH-] XLYOFNOQVPJJNP-UHFFFAOYSA-M 0.000 description 1
- QXJSBBXBKPUZAA-UHFFFAOYSA-N isooleic acid Natural products CCCCCCCC=CCCCCCCCCC(O)=O QXJSBBXBKPUZAA-UHFFFAOYSA-N 0.000 description 1
- 239000004310 lactic acid Substances 0.000 description 1
- 235000014655 lactic acid Nutrition 0.000 description 1
- VZCYOOQTPOCHFL-UPHRSURJSA-N maleic acid Chemical compound OC(=O)\C=C/C(O)=O VZCYOOQTPOCHFL-UPHRSURJSA-N 0.000 description 1
- 239000011976 maleic acid Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 150000002736 metal compounds Chemical class 0.000 description 1
- ZQPPMHVWECSIRJ-KTKRTIGZSA-N oleic acid Chemical compound CCCCCCCC\C=C/CCCCCCCC(O)=O ZQPPMHVWECSIRJ-KTKRTIGZSA-N 0.000 description 1
- 235000006408 oxalic acid Nutrition 0.000 description 1
- NBIIXXVUZAFLBC-UHFFFAOYSA-K phosphate Chemical compound [O-]P([O-])([O-])=O NBIIXXVUZAFLBC-UHFFFAOYSA-K 0.000 description 1
- 239000010452 phosphate Substances 0.000 description 1
- OXNIZHLAWKMVMX-UHFFFAOYSA-N picric acid Chemical compound OC1=C([N+]([O-])=O)C=C([N+]([O-])=O)C=C1[N+]([O-])=O OXNIZHLAWKMVMX-UHFFFAOYSA-N 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000011975 tartaric acid Substances 0.000 description 1
- 235000002906 tartaric acid Nutrition 0.000 description 1
- ISIJQEHRDSCQIU-UHFFFAOYSA-N tert-butyl 2,7-diazaspiro[4.5]decane-7-carboxylate Chemical compound C1N(C(=O)OC(C)(C)C)CCCC11CNCC1 ISIJQEHRDSCQIU-UHFFFAOYSA-N 0.000 description 1
- JOXIMZWYDAKGHI-UHFFFAOYSA-N toluene-4-sulfonic acid Chemical compound CC1=CC=C(S(O)(=O)=O)C=C1 JOXIMZWYDAKGHI-UHFFFAOYSA-N 0.000 description 1
- 239000002351 wastewater Substances 0.000 description 1
- 238000004065 wastewater treatment Methods 0.000 description 1
- 239000003021 water soluble solvent Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F11/00—Inhibiting corrosion of metallic material by applying inhibitors to the surface in danger of corrosion or adding them to the corrosive agent
- C23F11/08—Inhibiting corrosion of metallic material by applying inhibitors to the surface in danger of corrosion or adding them to the corrosive agent in other liquids
- C23F11/10—Inhibiting corrosion of metallic material by applying inhibitors to the surface in danger of corrosion or adding them to the corrosive agent in other liquids using organic inhibitors
- C23F11/14—Nitrogen-containing compounds
- C23F11/149—Heterocyclic compounds containing nitrogen as hetero atom
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- ing And Chemical Polishing (AREA)
- Manufacturing Of Printed Circuit Boards (AREA)
Abstract
Description
【発明の詳細な説明】
(産業上の利用分野)
従来の銅スルーホールプリント配線板の製造方法には数
多くの問題点があった。DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application) Conventional methods for manufacturing copper through-hole printed wiring boards have had many problems.
本発明は、それらの問題点を解決する新しい製造方法の
提供を目的とするものである。The present invention aims to provide a new manufacturing method that solves these problems.
従って本発明はプリント配線板製造業界に短い時間で安
価にかつ信頼性の高い銅スルーホールプリシト配線板を
製造する方法を提供するものである。Accordingly, the present invention provides the printed wiring board manufacturing industry with a method for manufacturing copper through-hole printed wiring boards in a short period of time, at low cost, and with high reliability.
(従来の技術)
銅スルーホールプリント配線板の製造方法として穴理法
、テンティング法、半田剥離法に大別される。(Prior Art) Methods for manufacturing copper through-hole printed wiring boards are broadly classified into hole drilling method, tenting method, and solder stripping method.
穴理法は両面鋼張積層板に必要な箇所に多数の穴をあけ
、この多数の穴を有する基板を化学鋼メツキ、次いで電
気鋼メツキが行なわれる。その後すべての穴にエツチン
グ液が入らないように目詰めインクを充填し、穴の内部
の銅メツキを保護した後、基板の両面に必要な回路を印
刷法もしくは写真法によって陽画形成しその後エツチン
グを行なうことによって、エツチング及び目詰めインク
で保護されている部分を残して露出部分の銅を除去する
ことによって銅スルーホール配線板が形成される。In the hole drilling method, a large number of holes are drilled at necessary locations in a double-sided steel clad laminate, and the board having the large number of holes is plated with chemical steel and then with electrical steel. After that, all the holes are filled with plugging ink to prevent the etching liquid from entering, and after protecting the copper plating inside the holes, the necessary circuits are formed as positive images on both sides of the board by printing or photography, and then etching is performed. By doing so, a copper through-hole wiring board is formed by removing the exposed copper, leaving the portion protected by the etching and plugging ink.
テンティング法では、穴あけに続いて化学鋼メツキ、電
気鋼メツキを行なった後ドライフィルムが貼り合わされ
、次いでパターン図の露光が行なわれ、次いで現象後エ
ツチングされる。穴の内部の銅メツキは貼り合わされた
ドライフィルムによって守られる。In the tenting method, after drilling, chemical steel plating and electrical steel plating are performed, a dry film is bonded together, a pattern image is exposed, and then etching is performed after development. The copper plating inside the hole is protected by a bonded dry film.
半田剥離法では、電気鋼メツキを行なうまでの工程は、
上記の二つの工法と同一であるが、必要な回路を印刷法
もしくは、写真法によって陰画形成で行なう点が異なっ
ている。In the solder stripping method, the process up to electrical steel plating is as follows:
This is the same as the above two methods, but the difference is that the necessary circuits are formed by printing or photographing negative images.
この陰画回路はエツチングレジストではなくその後行な
う電気半田メツキに対するメツキ用レジストである。勿
論この方法では、穴埋インクを使用する必要はない。陰
画で必要な回路をプリント配線配板に形成させ銅の露出
部以外がメツキ用レジスト膜で保護されていることにな
る。次いでこの露出部に電気半田メツキを行い、その後
メツキ用レジスト膜を除去する。次いで半田で保護され
ている部分を残して露出部分の銅を除去することによっ
て銅スルーホール配線板が形成される。This negative circuit is not an etching resist but a plating resist for the electrical solder plating to be performed later. Of course, this method does not require the use of filler ink. The necessary circuits are formed on the printed wiring board using negative images, and the areas other than the exposed copper are protected with a plating resist film. Next, electrical solder plating is performed on this exposed portion, and then the plating resist film is removed. A copper through-hole wiring board is then formed by removing the exposed copper, leaving the portions protected by solder.
(発明が解決しようとする課題)
上記の製造方法では、エツチングレジスト膜の信頼性に
劣り製造不良が発生し易い、あるいは生産性が低い又製
造コストが高い等の欠点を有している。(Problems to be Solved by the Invention) The above manufacturing method has drawbacks such as poor reliability of the etching resist film, easy production defects, low productivity, and high manufacturing cost.
ことに最近では短納期で大量の製品を安価に提供するこ
とが要求されるようになると対応しきれない。また半田
メツキ法では工程で使用する弗化水素酸や鉛に基づく公
害の発生が懸念され、公害予防対策にも多額の費用を必
要とする欠点もある。すなわち半田剥離法と同程度又は
それ以上の高い信頼性を有する銅スルーホール配線板の
製造法であって、工程が簡単で短時間の処理で済み、か
つ安価でありしかも公害防止上排水処理の簡単な方法の
開発が強く望まれてきた。In particular, recently there has been a demand to provide large quantities of products at low prices with short delivery times, making it difficult to meet these demands. Furthermore, the solder plating method has the disadvantage of causing pollution due to the hydrofluoric acid and lead used in the process, and requires a large amount of money to take measures to prevent pollution. In other words, it is a method for manufacturing copper through-hole wiring boards that has a reliability equivalent to or higher than that of the solder stripping method.The process is simple, requires only a short processing time, is inexpensive, and is also effective in preventing pollution and wastewater treatment. There has been a strong desire to develop a simple method.
(問題点を解決するための手段)
問題点を解決する手段として、本発明者は半田よりもつ
と安価安全、且つ除去が安易な物質を探した。(Means for Solving the Problems) As a means for solving the problems, the inventor searched for a substance that is cheaper, safer, and easier to remove than solder.
勿論その物質はエツチングに耐え、銅メツキの部分をエ
ツチング液から保護するものでなければならない。また
その物質は選択的に鋼表面上にのみ膜を形成することが
望まれるので鋼と反応する物質に着目し、鋭意研究を重
ねた結果、ついに2−アルキルベンツイミダゾール、2
−アルキル−アルキルベンツイミダゾール、2−フェニ
ルベンツイミダゾール、2−フェニルアルキルベンツイ
ミダゾールがこれらの問題点を一挙に解決するものであ
ることを見出だした。Of course, the material must be resistant to etching and protect the copper plated areas from the etching solution. In addition, since it is desired that the substance selectively form a film only on the steel surface, we focused on substances that react with steel, and as a result of intensive research, we finally found 2-alkylbenzimidazole, 2-alkylbenzimidazole,
It has been found that -alkyl-alkylbenzimidazole, 2-phenylbenzimidazole, and 2-phenylalkylbenzimidazole solve these problems all at once.
本発明の方法は、化学鋼メツキ、電気鋼メツキ、続いて
アルカリ水溶液に可溶のレジストインク又はアルカリ現
象型液状レジスト、又はアルカリ現象型感光性フィルム
を鋼張積層板上に陰画回路を形成し、次いで有効成分と
して下記一般式(I) ・ (n)で表される、化合物
一般式
(但し、式中R1は炭素数3〜17のアルキル基、R2
は低級アルキル基、nは0〜2HAは有機又は無機の酸
を示す)。The method of the present invention involves chemical steel plating, electrical steel plating, followed by resist ink soluble in alkaline aqueous solution, alkaline phenomenon type liquid resist, or alkaline phenomenon type photosensitive film to form a negative circuit on a steel clad laminate. Then, as an active ingredient, a compound general formula represented by the following general formulas (I) and (n) (wherein R1 is an alkyl group having 3 to 17 carbon atoms, R2
is a lower alkyl group, n is 0 to 2 HA is an organic or inorganic acid).
(但し、式中R3、R4は低級アルキル基、nは0〜2
、HAは有機又は無機の酸を示す)。(However, in the formula, R3 and R4 are lower alkyl groups, and n is 0 to 2
, HA indicates an organic or inorganic acid).
を1種類又は2種類以上を混合した溶液に浸漬して、銅
表面に前記2−アルキルベンツイミダゾール、2−アル
キル−アルキルベンツイミダゾール、2−フェニルベン
ツイミダゾール、2−フェニル−アルキルベンツイミダ
ゾール等の化合物からなるエツチングレジスト膜を形成
し、かくして得られた鋼張積層板を乾燥したのち、アル
カリ性水溶液と接触させて感光性フィルムもしくはレジ
スト膜を除き、アルカリ性エツチング液で処理すること
により、上記の目的が十分達成されることを見い出し本
発明を完成することが出来た。Compounds such as 2-alkylbenzimidazole, 2-alkyl-alkylbenzimidazole, 2-phenylbenzimidazole, 2-phenyl-alkylbenzimidazole, etc. are applied to the copper surface by immersing it in a solution of one type or a mixture of two or more types. After drying the steel clad laminate thus obtained, the photosensitive film or resist film is removed by contacting it with an alkaline aqueous solution and then treated with an alkaline etching solution to achieve the above purpose. We have found that this can be achieved satisfactorily and have completed the present invention.
本発明の実施に適する化合物は、2−n−プロピル−ベ
ンツイミダゾール、2−n−プロピル−メチルベンツイ
ミダゾール、2−n−プロピル−ジメチルベンツイミダ
ゾール、2−n−ブチル−ベンツイミダゾール、2−n
−ブチル−メチルベンツイミダゾール、2−n−ブチル
−ジメチルベンツイミダゾール2−n−ペンチル−ベン
ツイミダゾール、2−n−ペンチル−メチルベンツイミ
ダゾール、2−n−ペンチル−ジメチルベンツイミダゾ
ール、2−n−へキシル−ベンツイミダゾール、2−n
−へキシル−メチルベンツイミダゾール、2−n−ヘキ
シル−ジメチルベンツイミダゾール、2−n−へブチル
−ベンツイミダゾール、2−n−へブチル−メチルベン
ツイミダゾール、2−n−ヘプチル−ジメチルベンツイ
ミダゾール、2−n−オクチル−ベンツイミダゾール、
2−n−オグチルーメチルベンツイミダゾール、2−n
−オクチル−ジメチルベンツイミダゾール、2− n−
ノニル−ベンツイミダゾール、2−n−ノニル−メチル
ベンツイミダゾール、2−n−ノニル−ジメチルベンツ
イミダゾール、2−n−デシル−ベンツイミダゾール、
2−n−デシル−メチルベンツイミダゾール、2−n−
デシル−ジメチルベンツイミダゾール、2−n−ウンデ
シル−ベンツイミダゾール、2−n−ウンデシル−メチ
ルベンツイミダゾール、2− n−ウンデシル−ジメチ
ルベンツイミダゾール、2− n−ドデシル−ベンツイ
ミダゾール、2−n−ドデシル−メチルベンツイミダゾ
ール、2− n−ドデシル−ジメチルベンツイミダゾー
ル、2−n−トリデシル−ベンツイミダゾール、2−n
−トリデシル−メチルベンツイミダゾール、2−n−ト
リデシル−ジメチルベンツイミダゾール、2−n−テト
ラデシル−ベンツイミダゾール、2−n−テトラデシル
−メチルベンツイミダゾール、2− n−テトラデシル
−ジメチルベンツイミダゾール、2−n−ペンタデシル
−ベンツイミダゾール、2−n−ペンタデシル−メチル
ベンツイミダゾール、2−n−ペンタデシル−ジメチル
ベンツイミダゾール、2−n−ヘキサデシル−ベンツイ
ミダゾール、2−n−ヘキサデシル−メチルベンツイミ
ダゾール、2−n−ヘキサデシル−ジメチルベンツイミ
ダゾール、2−n−ヘプタデシル−ベンツイミダゾール
、2−n−ヘプタデシル−メチルベンツイミダゾール、
2−n−ヘプタデシル−ジメチルベンツイミダゾール、
2−イソプロピル−ベンツイミダゾール、2−イソプロ
ピル−メチルベンツイミダゾール、2−イソプロピル−
メチルベンツイミダゾール2−イソブチル−ベンツイミ
ダゾール、2−イソブチル−メチルベンツイミダゾール
、2−イソブチル−ジメチルベンツイミダゾール、2−
イソペンチル−ベンツイミダゾール2−イソペンチル−
メチルベンツイミダゾール、2−イソペンチル−ジメチ
ルベンツイミダゾール、2−イソへキシル−ヘンライミ
ダゾール、2−イソへキシル−メチルベンツイミダゾー
ル、2−イソヘキシル−ジメチルベンツイミダゾール、
2−ネオペンチル−ベンツイミダゾール、2−ネオペン
チル−メチルベンツイミダゾール、2−ネオペンチル−
ジメチルベンツイミダゾール、2−sec−ブチル−ベ
ンツイミダゾール、2−sec−ブチル−メチルベンツ
イミダゾール、2−8ec−ブチル−ジメチルベンツイ
ミダゾール2−tert−ブチル−ベンツイミダゾール
、’2−tert−ブチル−メチルベンツイミダゾール
、2−tert−ブチル−ジメチルベンツイミダゾール
、2−フェニル−ベンツイミダゾール、2−フェニル−
メチルベンツイミダゾール、2−フェニル−ジメチルベ
ンツイミダゾール、2−トシル−ベンツイミダゾール、
2−トシル−メチルベンツイミダゾール、2−トシル−
ジメチルベンツイミダゾール、2−キシリル−ベンツイ
ミダゾール2−キシリル−メチルベンツイミダゾール2
−キシリル−ジメチルベンツイミダゾール、2−メシチ
ル−ベンツイミダゾール、2−メシチル−メチルベンツ
イミダシル、2−メシチル−ジメチルベンツイミダゾー
ル、2−t e r t−フェニル−ベンツイミダゾー
ル2−tert−フェニル−メチルベンツイミダゾール
、2−tert−フェニル−ジメチルベンツイミダゾー
ル、と有機酸や無機酸より形成されるもので、それらの
酸の代表的なものは、酢酸、ギ酸、カプリン酸、グリコ
ール酸、バラニトロ安息香酸、パラトルエンスルホン酸
、ピクリン酸、蓚酸、コハグ酸、亜りん酸、マレイン酸
、アクリル酸、フマール酸、酒石酸、アジピン酸、塩酸
、硫酸、燐酸、乳酸、オレイン酸、等である。又酢酸鋼
、硫酸鋼、塩化第一銅、塩化第二鋼、水酸化鋼、酸化鋼
、酸化第一銅、酸化第二銅、リン酸鋼、炭酸鋼、等の金
属化合物、又はメタノール、エタノール、イソプロピル
アルコールブタノール、アセトン等の水溶性溶媒を任意
の割合で混合して使用することも可能である。Compounds suitable for the practice of the invention are 2-n-propyl-benzimidazole, 2-n-propyl-methylbenzimidazole, 2-n-propyl-dimethylbenzimidazole, 2-n-butyl-benzimidazole, 2-n-
-butyl-methylbenzimidazole, 2-n-butyl-dimethylbenzimidazole, 2-n-pentyl-benzimidazole, 2-n-pentyl-methylbenzimidazole, 2-n-pentyl-dimethylbenzimidazole, 2-n- xyl-benzimidazole, 2-n
-hexyl-methylbenzimidazole, 2-n-hexyl-dimethylbenzimidazole, 2-n-hebutyl-benzimidazole, 2-n-hebutyl-methylbenzimidazole, 2-n-heptyl-dimethylbenzimidazole, 2 -n-octyl-benzimidazole,
2-n-ogutyl-methylbenzimidazole, 2-n
-Octyl-dimethylbenzimidazole, 2-n-
Nonyl-benzimidazole, 2-n-nonyl-methylbenzimidazole, 2-n-nonyl-dimethylbenzimidazole, 2-n-decyl-benzimidazole,
2-n-decyl-methylbenzimidazole, 2-n-
Decyl-dimethylbenzimidazole, 2-n-undecyl-benzimidazole, 2-n-undecyl-methylbenzimidazole, 2-n-undecyl-dimethylbenzimidazole, 2-n-dodecyl-benzimidazole, 2-n-dodecyl- Methylbenzimidazole, 2-n-dodecyl-dimethylbenzimidazole, 2-n-tridecyl-benzimidazole, 2-n
-tridecyl-methylbenzimidazole, 2-n-tridecyl-dimethylbenzimidazole, 2-n-tetradecyl-benzimidazole, 2-n-tetradecyl-methylbenzimidazole, 2-n-tetradecyl-dimethylbenzimidazole, 2-n- Pentadecyl-benzimidazole, 2-n-pentadecyl-methylbenzimidazole, 2-n-pentadecyl-dimethylbenzimidazole, 2-n-hexadecyl-benzimidazole, 2-n-hexadecyl-methylbenzimidazole, 2-n-hexadecyl- Dimethylbenzimidazole, 2-n-heptadecyl-benzimidazole, 2-n-heptadecyl-methylbenzimidazole,
2-n-heptadecyl-dimethylbenzimidazole,
2-isopropyl-benzimidazole, 2-isopropyl-methylbenzimidazole, 2-isopropyl-
Methylbenzimidazole 2-isobutyl-benzimidazole, 2-isobutyl-methylbenzimidazole, 2-isobutyl-dimethylbenzimidazole, 2-
isopentyl-benzimidazole 2-isopentyl-
Methylbenzimidazole, 2-isopentyl-dimethylbenzimidazole, 2-isohexyl-henreimidazole, 2-isohexyl-methylbenzimidazole, 2-isohexyl-dimethylbenzimidazole,
2-neopentyl-benzimidazole, 2-neopentyl-methylbenzimidazole, 2-neopentyl-
Dimethylbenzimidazole, 2-sec-butyl-benzimidazole, 2-sec-butyl-methylbenzimidazole, 2-8ec-butyl-dimethylbenzimidazole 2-tert-butyl-benzimidazole, '2-tert-butyl-methylbenz Imidazole, 2-tert-butyl-dimethylbenzimidazole, 2-phenyl-benzimidazole, 2-phenyl-
Methylbenzimidazole, 2-phenyl-dimethylbenzimidazole, 2-tosyl-benzimidazole,
2-tosyl-methylbenzimidazole, 2-tosyl-
Dimethylbenzimidazole, 2-xylyl-benzimidazole 2-xylyl-methylbenzimidazole 2
-xylyl-dimethylbenzimidazole, 2-mesityl-benzimidazole, 2-mesityl-methylbenzimidazole, 2-mesityl-dimethylbenzimidazole, 2-tert-phenyl-benzimidazole 2-tert-phenyl-methyl It is formed from benzimidazole, 2-tert-phenyl-dimethylbenzimidazole, and organic or inorganic acids. Typical examples of these acids are acetic acid, formic acid, capric acid, glycolic acid, varanitrobenzoic acid, These include paratoluenesulfonic acid, picric acid, oxalic acid, succinic acid, phosphorous acid, maleic acid, acrylic acid, fumaric acid, tartaric acid, adipic acid, hydrochloric acid, sulfuric acid, phosphoric acid, lactic acid, and oleic acid. Also, metal compounds such as acetic acid steel, sulfuric acid steel, cuprous chloride, chlorinated steel, hydroxide steel, oxidized steel, cuprous oxide, cupric oxide, phosphate steel, carbonated steel, or methanol, ethanol. It is also possible to use a mixture of water-soluble solvents such as , isopropyl alcohol butanol, and acetone in any proportion.
本発明における処理の態様について述べる。銅の表面を
研磨、脱脂、酸洗、水洗浄によって仕上げ、引き続き2
−アルキルベンツイミダゾール、2−アルキル−アルキ
ルベンツイミダゾール、又は2−フェニルベンツイミダ
ゾール、2−フェニル−アルキルベンツイミダゾールあ
るいはその誘導体を0.01〜40%望ましくは0.1
〜5%にこれら誘導体を溶解するために必要な上記の酸
を含む溶液に浸漬する。浸漬は0〜100″Cの温度範
囲が可能であるが望ましくは30〜50°Cが適当であ
る。浸漬時間は数秒から数十分の範囲が可能で、40〜
50°Cの温度では1〜3分が適当である。2−アルキ
ルベンツイミダゾール、2−アルキル−アルキルベンツ
イミダゾール、2−フェニルベンツイミダゾール、2−
フェニル−アルキルベンツイミダゾール溶液の適当なP
Hは酸性であれば可能であるが望ましくは5.0以下が
適当である。付着量は処理温度の上昇及び処理時間の延
長に従って増加する。このような2−アルキルベンツイ
ミダゾール、2−アルキル−アルキルベンツイミダゾー
ル、2−フェニルベンツイミダゾール、2−フェニル−
アルキルベンツイミダゾールの高い膜形成能力を化学的
に安定な耐エツチングレジスト膜として工業的に十分利
用できることに注目した点に本発明の特徴がある。Aspects of processing in the present invention will be described. The surface of the copper is polished, degreased, pickled, and washed with water, followed by 2
- 0.01 to 40% of alkylbenzimidazole, 2-alkyl-alkylbenzimidazole, 2-phenylbenzimidazole, 2-phenyl-alkylbenzimidazole or a derivative thereof, preferably 0.1
Immerse in a solution containing ~5% of the above acids necessary to dissolve these derivatives. The temperature range for immersion is 0 to 100"C, but preferably 30 to 50"C.The immersion time can range from several seconds to several tens of minutes, and 40 to 50"C.
At a temperature of 50°C, 1 to 3 minutes is appropriate. 2-alkylbenzimidazole, 2-alkyl-alkylbenzimidazole, 2-phenylbenzimidazole, 2-
Suitable P of phenyl-alkylbenzimidazole solution
H is possible as long as it is acidic, but preferably 5.0 or less. The amount of adhesion increases as the processing temperature increases and the processing time increases. Such 2-alkylbenzimidazole, 2-alkyl-alkylbenzimidazole, 2-phenylbenzimidazole, 2-phenyl-
The present invention is characterized in that it focuses on the fact that the high film-forming ability of alkylbenzimidazole can be fully utilized industrially as a chemically stable etching-resistant resist film.
尚、本発明方法は硬質プリント配線板及びフレキシブル
プリント配線板のいずれにおいても実施することが出来
る。Note that the method of the present invention can be carried out on both rigid printed wiring boards and flexible printed wiring boards.
以下実施例を挙げて本発明を具体的に説明する。The present invention will be specifically explained below with reference to Examples.
実施例1
1 、6 m/m厚のFR−4両面鋼張積層板に穴をあ
け、化学鋼メツキ、続いて電気メツキをすることにより
穴内部及び両面に25〜30μ厚の鋼メツキを形成させ
た。次にアクリル酸、スチレンコポリマーを主成分とす
るレジストインク(商品名rKM−10J太陽インキ製
造(株)製)をスクリーン印刷により厚さ20μ程度の
陰画のレジスト膜を形成し80°Cの温度で10間乾燥
した。又感光性フィルム(商品名rA−225J富士ハ
ント(株)製)をラミネート、露光、現像して、25μ
の陰画のレジスト膜を形成した。上記の印刷法、写真法
で陰画回路を形成した鋼張積層板を20%過硫酸ソーダ
水溶液に30秒間浸漬して、銅表面をソフトエッチした
のちに2−アルキルベンツイミダゾール、又は2−アル
キル−アルキルベンツイミダゾールの1%溶液中に銅張
積層板を浸漬し、ゆっくり動かしながら50°Cの温度
で3分間処理した。その後、銅張積層板を水洗し140
°Cで10分間乾燥してエツチングレジスト膜を形成さ
せた。続いて3%水酸化ナトリウム水溶液で陰画のレジ
スト膜を除去し、回路として残す必要のない部分の銅を
露出させた、次いでアルカリ性エッチンング剤(商品名
「Aプロセス」メルチラグ(株)製)を用いて、液温5
0°Cでスプレー中に上記鋼張積層板を120秒間通過
させてエツチングを行なった。その後鋼張積層板を5%
塩酸水溶液に浸漬エツチングレジスト膜を溶解除去して
、銅スルーホールプリント配線板を製造した。Example 1 Holes were drilled in a FR-4 double-sided steel clad laminate with a thickness of 1 and 6 m/m, and steel plating with a thickness of 25 to 30 μm was formed inside the hole and on both sides by chemical steel plating and then electroplating. I let it happen. Next, a resist ink containing acrylic acid and styrene copolymer as main components (trade name: rKM-10J, manufactured by Taiyo Ink Manufacturing Co., Ltd.) was screen printed to form a negative resist film with a thickness of about 20μ, and heated at a temperature of 80°C. It was dried for 10 minutes. In addition, a photosensitive film (product name: rA-225J manufactured by Fuji Hunt Co., Ltd.) was laminated, exposed, and developed to a film of 25 μm.
A negative resist film was formed. A steel clad laminate on which a negative circuit has been formed using the above printing method or photographic method is immersed in a 20% sodium persulfate aqueous solution for 30 seconds to soft etch the copper surface, and then 2-alkylbenzimidazole or 2-alkyl- The copper clad laminate was immersed in a 1% solution of alkylbenzimidazole and treated at a temperature of 50° C. for 3 minutes with slow movements. After that, the copper clad laminate was washed with water for 140 minutes.
An etching resist film was formed by drying at °C for 10 minutes. Next, the negative resist film was removed with a 3% aqueous sodium hydroxide solution to expose the copper in areas that did not need to be left as a circuit, and then an alkaline etching agent (trade name "A Process" manufactured by Melchilag Co., Ltd.) was used. So, liquid temperature 5
Etching was carried out by passing the steel clad laminate for 120 seconds during spraying at 0°C. After that, 5% steel clad laminate
The etching resist film was dissolved and removed by immersion in a hydrochloric acid aqueous solution to produce a copper through-hole printed wiring board.
この試験結果は表1示した。The test results are shown in Table 1.
実施例2
1 、6 m/m厚のFR−4両面鋼張積層板に穴をあ
け、化学鋼メツキ、続いて電気鋼メツキをすることによ
り、穴内部及び両面に25〜30μ厚の銅メツキを形成
させた。Example 2 A hole was drilled in a FR-4 double-sided steel clad laminate with a thickness of 1 or 6 m/m, and then chemical steel plating was applied, followed by electrical steel plating, thereby forming a 25-30μ thick copper plating inside the hole and on both sides. was formed.
次に、アクリル酸、スチレンコポリマーを主成分とする
レジストインク(商品名rKM−10」太陽インク製造
(株)製)をスクリーン印刷により厚さ20μ程度の陰
画のレジスト膜を形成し80’Cの温度で10分間乾燥
した。又、感光性フィルム(商品名「A−225」富士
ハント(株)製)をラミネート、露光、現像して25μ
の陰画のレジスト膜を形成した。更に、上記の印刷法文
写真法で陰画回路を形成した銅張積層板を20%過硫酸
ソーダ水溶液に30秒間浸漬して、鋼表面をソフトエッ
チしたのちに、2−フェニルベンツイミタゾール、又は
2−フェニル−アルキルベンツイミダゾールの1%溶液
中に鋼張積層板を浸漬し、ゆっくり動かしながら50°
Cの温度で3分間処理した。その後鋼張積層板を水洗し
、140°Cで10分間乾燥してエツチングレジスト膜
を形成させた。続いて3%水酸化ナトリウム水溶液で、
陰画のレジスト膜を除去し、回路として残す必要のない
部分の銅を露出させた。次いでアルカリ性エツチング剤
(商品名「Aプロセス」メルチラグ(株)製)を用いて
、液温50″Cでスプレー中に上記鋼張積層板を120
秒間通過させてエツチングを行なった。その後鋼張積層
板を5%塩酸水溶液に浸漬し、エツチングレジスト膜を
溶解除去して鋼スルーホール配線板を製造した。Next, a resist ink containing acrylic acid and styrene copolymer as main components (trade name: rKM-10, manufactured by Taiyo Ink Manufacturing Co., Ltd.) was screen printed to form a negative resist film with a thickness of about 20 μm. Dry at temperature for 10 minutes. In addition, a photosensitive film (trade name "A-225" manufactured by Fuji Hunt Co., Ltd.) was laminated, exposed, and developed to a 25μ film.
A negative resist film was formed. Furthermore, the copper-clad laminate on which a negative circuit was formed using the above printing method was immersed in a 20% sodium persulfate aqueous solution for 30 seconds to soft-etch the steel surface, and then 2-phenylbenzimitazole or A steel clad laminate was immersed in a 1% solution of 2-phenyl-alkylbenzimidazole and rotated slowly at 50°.
It was treated for 3 minutes at a temperature of C. Thereafter, the steel clad laminate was washed with water and dried at 140°C for 10 minutes to form an etching resist film. Then, with 3% sodium hydroxide aqueous solution,
The negative resist film was removed to expose copper in areas that did not need to remain as a circuit. Next, using an alkaline etching agent (trade name "A Process" manufactured by Melchilag Co., Ltd.), the steel clad laminate was etched at a temperature of 50"C while spraying.
Etching was performed by passing the film for a second. Thereafter, the steel clad laminate was immersed in a 5% aqueous hydrochloric acid solution to dissolve and remove the etching resist film to produce a steel through-hole wiring board.
この試験結果は表2に示した。The test results are shown in Table 2.
(発明の効果)
本発明の製造方法により、生産性の向上、生産性コスト
の減少、排水中の有害物質の減少、又高い信頼性を有す
る銅スルーホールプリント配線板の製造に、特に顕著な
効果を発揮しつるものである。(Effects of the Invention) The manufacturing method of the present invention improves productivity, reduces productivity costs, reduces harmful substances in wastewater, and is particularly effective in manufacturing copper through-hole printed wiring boards with high reliability. It is effective and vines.
Claims (1)
効成分として下記一般式( I )・(II)で表わされる
、化合物 一般式 ▲数式、化学式、表等があります▼( I ) (但し、式中R_1は炭素数3〜17のアルキル基、R
_2は低級アルキル基、nは0〜2、HAは有機又は無
機の酸を示す)。 ▲数式、化学式、表等があります▼(II) (但し、式中R_3、R_4は低級アルキル基、nは0
〜2、HAは,有機又は無機の酸を 示す)。 を1種類又は2種類以上を混合した溶液に浸漬して、銅
表面に前記2−アルキルベンツイミダゾール、2−アル
キル−アルキルベンツイミダゾール、2−フェニルベン
ツイミダゾール、2−フェニル−アルキルベンツイミダ
ゾール等の化合物からなるエッチングレジスト膜を形成
し、かくして得られた銅張積層板を乾燥したのち、アル
カリ性水溶液と接触させて陰画のレジスト膜を除き、ア
ルカリ性エッチング液で処理することを特徴とする銅ス
ルーホール配線板の製造方法。[Claims] A negative resist film soluble in an alkaline aqueous liquid is formed by a printing method or a photographic method, and then a general compound represented by the following general formulas (I) and (II) is used as an active ingredient. Formula▲There are mathematical formulas, chemical formulas, tables, etc.▼(I) (However, in the formula, R_1 is an alkyl group having 3 to 17 carbon atoms, R
_2 is a lower alkyl group, n is 0 to 2, and HA is an organic or inorganic acid). ▲There are mathematical formulas, chemical formulas, tables, etc.▼(II) (However, in the formula, R_3 and R_4 are lower alkyl groups, and n is 0.
~2, HA represents an organic or inorganic acid). Compounds such as 2-alkylbenzimidazole, 2-alkyl-alkylbenzimidazole, 2-phenylbenzimidazole, 2-phenyl-alkylbenzimidazole, etc. are applied to the copper surface by immersing it in a solution of one type or a mixture of two or more types. Copper through-hole wiring characterized in that an etching resist film is formed, the copper-clad laminate thus obtained is dried, and then brought into contact with an alkaline aqueous solution to remove the negative resist film and treated with an alkaline etching solution. Method of manufacturing the board.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP02029631A JP3074315B2 (en) | 1990-02-13 | 1990-02-13 | Method of manufacturing copper through-hole printed wiring board |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP02029631A JP3074315B2 (en) | 1990-02-13 | 1990-02-13 | Method of manufacturing copper through-hole printed wiring board |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH03235395A true JPH03235395A (en) | 1991-10-21 |
JP3074315B2 JP3074315B2 (en) | 2000-08-07 |
Family
ID=12281437
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP02029631A Expired - Lifetime JP3074315B2 (en) | 1990-02-13 | 1990-02-13 | Method of manufacturing copper through-hole printed wiring board |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP3074315B2 (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5275694A (en) * | 1992-03-24 | 1994-01-04 | Sanwa Laboratory Ltd. | Process for production of copper through-hole printed wiring boards |
WO2001014612A1 (en) * | 1999-08-26 | 2001-03-01 | Enthone-Omi Inc. | Process for selective deposition of copper substrates |
CN108505048A (en) * | 2018-05-14 | 2018-09-07 | 东南大学 | A kind of benzimidazolyl polyethers copper inhibitor and preparation method thereof |
CN111269555A (en) * | 2020-03-31 | 2020-06-12 | 浙江益弹新材料科技有限公司 | Thermoplastic polyurethane elastomer composition and preparation method thereof |
-
1990
- 1990-02-13 JP JP02029631A patent/JP3074315B2/en not_active Expired - Lifetime
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5275694A (en) * | 1992-03-24 | 1994-01-04 | Sanwa Laboratory Ltd. | Process for production of copper through-hole printed wiring boards |
WO2001014612A1 (en) * | 1999-08-26 | 2001-03-01 | Enthone-Omi Inc. | Process for selective deposition of copper substrates |
CN108505048A (en) * | 2018-05-14 | 2018-09-07 | 东南大学 | A kind of benzimidazolyl polyethers copper inhibitor and preparation method thereof |
CN108505048B (en) * | 2018-05-14 | 2019-11-12 | 东南大学 | A kind of benzimidazolyl polyethers copper inhibitor and preparation method thereof |
CN111269555A (en) * | 2020-03-31 | 2020-06-12 | 浙江益弹新材料科技有限公司 | Thermoplastic polyurethane elastomer composition and preparation method thereof |
CN111269555B (en) * | 2020-03-31 | 2021-09-17 | 浙江益弹新材料科技有限公司 | Thermoplastic polyurethane elastomer composition and preparation method thereof |
Also Published As
Publication number | Publication date |
---|---|
JP3074315B2 (en) | 2000-08-07 |
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