JPH03235231A - Information recording medium - Google Patents

Information recording medium

Info

Publication number
JPH03235231A
JPH03235231A JP2028511A JP2851190A JPH03235231A JP H03235231 A JPH03235231 A JP H03235231A JP 2028511 A JP2028511 A JP 2028511A JP 2851190 A JP2851190 A JP 2851190A JP H03235231 A JPH03235231 A JP H03235231A
Authority
JP
Japan
Prior art keywords
recording
film
compound
auxiliary layer
recording medium
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2028511A
Other languages
Japanese (ja)
Inventor
Tetsuya Nishida
哲也 西田
Shinkichi Horigome
堀籠 信吉
Norio Ota
憲雄 太田
Akira Goto
明 後藤
Shuhei Nakamichi
中道 修平
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Maxell Ltd
Original Assignee
Hitachi Ltd
Hitachi Maxell Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd, Hitachi Maxell Ltd filed Critical Hitachi Ltd
Priority to JP2028511A priority Critical patent/JPH03235231A/en
Publication of JPH03235231A publication Critical patent/JPH03235231A/en
Priority to US07/615,914 priority patent/US5273860A/en
Pending legal-status Critical Current

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  • Optical Record Carriers And Manufacture Thereof (AREA)

Abstract

PURPOSE:To obtain an information recording medium having good recording/ reproducing characteristics and stability and is suitable for high-density recording by forming an auxiliary recording layer essentially comprising a compd. of calcogens and metal elements adjacent to at least one interface of a recording film to the substrate side. CONSTITUTION:The information recording medium has a substrate 1 and a recording film 5 in which pits or holes are formed by irradiation of an energy beam for recording. The interface of the recording film 5 to the substrate 1 side is covered with an auxiliary recording layer 4 essentially comprising a compd. of calcogens and metal. If the medium has a base film 3, the film 4 is provided between the base film 3 and the recording film 5, and further the layer 4 may be formed on the opposite interface of the recording film 5 to the substrate 1. Thereby, the rim of a pit formed by irradiation of an energy beam for recording has a smaller diameter, which means that the influence from adjacent recording pits is suppressed low and that the obtd. medium is suitable for high density recording.

Description

【発明の詳細な説明】[Detailed description of the invention]

(産業上の利用分野] 本発明はレーザ光、電子線等の記録用エネルギービーム
によって、例えば映像や音声等のアナログ信号をFM変
調した信号や、電子計算機のデータ、ファクシミリ信号
、ディジタルオーディオ信号等のディジタル情報をリア
ルタイムで記録することが可能な情報記録媒体に関する
(Industrial Application Field) The present invention is applicable to signals obtained by FM modulating analog signals such as video and audio, computer data, facsimile signals, digital audio signals, etc. using a recording energy beam such as a laser beam or an electron beam. The present invention relates to an information recording medium that can record digital information in real time.

【従来の技術】[Conventional technology]

レーザ光等の記録用エネルギービームを記録膜に照射し
、記録膜に凹部又は孔部を形成して記録を行なう情報記
録媒体の構成は、基板、下地膜、記録膜から成っている
。基板には、ガラス円板又はアクリル樹脂等のプラスチ
ック円板にトラッキング用の案内溝を有する紫外線硬化
樹脂層設けた円板、射出成形で案内溝を形成したポリカ
ーボネート、アクリル樹脂、ポリオレフィン等のプラス
チック円板等を用いている。下地膜にはニトロセルロー
ス、アセチルセルロース、銅フタロシアニン等の溶媒可
溶性樹脂又はフッ素樹脂等のスパッタリグ可能な樹脂を
用いている。記録膜には、例えばTeを主成分とする薄
膜を用いている。 従来、このような情報記録媒体の記録膜の安定性向上の
ために、記録膜の少なくも一方の界面にSb、Si、G
e、Sn等の元素を主成分とする薄膜を記録補助層とし
て設けることが、特開昭58−224446に記載され
ている。 なお、記録膜組成に関しては、特開昭 57−3818
9及び特開昭57−66996等に記載されている。ま
た、下地膜に関しては特開昭57−55544に記載さ
れている。
An information recording medium in which recording is performed by irradiating a recording film with a recording energy beam such as a laser beam to form recesses or holes in the recording film includes a substrate, a base film, and a recording film. Substrates include glass discs or plastic discs made of acrylic resin, etc., with UV-curable resin layers provided with guide grooves for tracking, and plastic discs made of polycarbonate, acrylic resin, polyolefin, etc., with guide grooves formed by injection molding. A board etc. is used. For the base film, a solvent-soluble resin such as nitrocellulose, acetylcellulose, or copper phthalocyanine, or a sputterable resin such as a fluororesin is used. For example, a thin film containing Te as a main component is used as the recording film. Conventionally, in order to improve the stability of the recording film of such information recording media, Sb, Si, and G were added to at least one interface of the recording film.
JP-A-58-224446 describes the provision of a thin film mainly composed of elements such as e and Sn as a recording auxiliary layer. Regarding the recording film composition, please refer to Japanese Patent Application Laid-Open No. 57-3818.
9 and Japanese Unexamined Patent Publication No. 57-66996. Further, the base film is described in JP-A-57-55544.

【発明が解決しようとする課題] しかしながら、上記従来技術に示された情報記録用媒体
は、レーザ光照射部の温度分布、溶融した記録膜の粘性
及び溶融した記録膜と下地膜とのぬれ性については配慮
がされていなかった。すなわち、レーザ光照射部の温度
分布が広がっているために形成した記録ピット径(リム
外径)が大きい。溶融した記録膜の粘性が小さく、溶融
した記録膜と下地膜とのぬれ性が小さいために、開いた
孔の周りに形成されるリムのリム幅は小さく、リム内径
が大きいという問題点があった。記録孔からの再生信号
は孔のリム内径に依存しているため、リム外径が同じで
もリム内径の小さい方が高密度化に適している。従って
、レーザ光波長830nm、対物レンズの開口数(NA
)0.53の光ヘッドを用いて、従来の媒体構成で作製
した情報記録媒体にピット間隔が1.4μmの高密度記
録を行なうと、電気信号として十分大きな再生信号を確
保できる記録用レーザ光のパワー領域(パワーマージン
)が小さく、高密度記録には適していないという問題が
あった。 本発明の目的は、記録、再生特性が良好で、安定性の良
い、高密度記録に適した情報記録媒体を提供することに
ある。 【課題を解決するための手段】 上記の目的は、(1)基板上に、記録用エネルギービー
ムの照射を受けて凹部又は孔部が形成される記録膜を少
なくとも有する情報記録媒体において、該記録膜の少な
くとも基板側の界面に隣接して、カルコゲン元素と金属
元素との化合物を主成分とする記録補助層を設けたこと
を特徴とする情報記録媒体、 (2)上記記録膜の基板側と逆の界面に隣接してさらに
記録補助層を設けたことを特徴とする上記1に記載の情
報記録媒体、 (3)上記記録補助層の融点が上記記録膜の融点以上で
あることを特徴とする上記1又は2に記載の情報記録媒
体、 (4)上記記録補助層を構成する化合物は、Se化合物
を主成分とすることを特徴とする上記1.2又は3に記
載の情報記録媒体、 (5)上記Se化合物は+ sb、Sn、In、Bi、
Ga、Ge、Pb又はZnとSeとの化合物である上記
4に記載の情報記録媒体。 (6)上記記録補助層を構成する化合物は、S化合物を
主成分とすることを特徴とする上記1.2又は3に記載
の情報記録媒体、 (7)上記S化合物は、Sb、Sn、In、Bj、Ga
、Ge、Pb又はZnとSとの化合物である上記6に記
載の情報記録媒体、 (8)上記記録膜は、少なくともTaを含有することを
特徴とする上記1から7のいずれかに記載の情報記録媒
体により達成される。 本発明の情報記録媒体においては、記録用エネルギービ
ームの照射を受けて形成した孔のリム内径が小さくなる
ように、記録膜の少なくとも基板側の界面に隣接して、
カルコゲン元素と金属元素との化合物を主成分とする記
録補助層を設ける。 情報記録媒体が下地膜を有するとき、記録補助層は下地
膜と記録膜との間に設ける。記録補助層は。 記録膜の基板側と逆の界面に隣接してさらに設けてもよ
い。それぞれの記録補助層は同じ化合物を主成分とする
ものでも、異なる化合物を主成分とするものでもよい。 また、上記記録補助層の膜厚は、形成した孔のリムの内
径が小さくパワーマージンが大きいという点で、1nm
以上200nm以下が好ましく。 2nm以上1100n以下がより好ましく、4nm以上
50nm以下が最も好ましい。 記録補助層の融点は記録膜の融点より高いことが好まし
い。記録膜としてTe系を用いる場合、記録膜の融点は
Teの融点である450’Cより低い。そのため記録補
助層の融点がTeの融点である450’C以上であるこ
とが好ましく、500”C以上であることがより好まし
い。 記録補助層の成分としては、耐酸化性が大きいという点
で、Se化合物を主成分とするのが好ましい。また、記
録補助層での記録光の吸収率が低いという点では、Se
化合物、S化合物を主成分とするのが好ましい。 Se化合物のうちでは、Seとsbの化合物(S b2
S e3) 、S eとSnの化合物(S n S e
、5nSe2)、SeとInの化合物(I n4Se、
、■ nSe  、  I  n、S  e  7 、
  I  n、S  e、 、  I  n  2 S
  e  3)SeとB1の化合物(B i S e、
 B i2S e、)、SeとGaの化合物(GaSe
、Ga2Se3)。 SeとGeの化合物(GeSe−Ge2Se、)、Se
とpbの化合物(PbSe)及びSeとZnの化合物(
ZnSe)はいずれも融点がTeの融点である450’
C以上であるため、記録密度が高くなるという点で好ま
しい。 S化合物のうちでは、Sとsbの化合物(sb2s、)
 、sとSnの化合物(SnS、5n2S1.5nS2
)、SとInの化合物(InSe。 I n、S、、In、B4.I n2S、)、SとBi
の化合物(B j2s3)、 SとGaの化合物(Ga
、S、GaS、Ga、S、)、SとGeの化合物(G 
e S、Ge2S、)、Sとpbの化合物(pbs)及
びSとZnの化合物(ZnS)はいずれも融点がTeの
融点である450℃以上であるため、記録密度が高くな
るという点で好ましい。 また、上記のSe及びS化合物系のうち、SeとSn、
SeとIn、SeとBj、、SeとGa、SeとGe、
Sと5n−5とIn、SとGa、及びSとGeの2元系
相では、2種以上の化合物を有している。この2種以上
の化合物の混合物を用いても良好な結果が得られる。 上記記録補助層は、上記化合物の他に、その化合物の構
成元素や、その他のカルコゲン元素、金属元素を混合し
て用いることができる。これらの元素は1、Oat%以
下添加することが好ましく。 5at%以下添加することがより好ましい。特にSeを
添加することにより記録特性にほとんど影響を及ぼすこ
となく、記録補助層の耐酸化性を向上させることができ
る。 記録膜組成としては無機物が主成分であればTe系、S
e系、又はその他の金属系等全て良好な特性が得られる
。特に、Teを含有しているTe−3e系、Te−C系
等が好ましい。記録膜の膜厚は10から50nmの範囲
にすることが好ましい。 本発明の情報記録媒体はディスク状、テープ状、カード
状等の形態とすることができる。
[Problems to be Solved by the Invention] However, the information recording medium shown in the above-mentioned prior art has problems with the temperature distribution of the laser beam irradiated part, the viscosity of the melted recording film, and the wettability of the melted recording film and the base film. No consideration was given to this. That is, since the temperature distribution of the laser beam irradiation part is wide, the diameter of the formed recording pit (rim outer diameter) is large. Since the viscosity of the molten recording film is low and the wettability between the molten recording film and the base film is low, the rim formed around the open hole has a small rim width and a large rim inner diameter. Ta. Since the reproduced signal from the recording hole depends on the rim inner diameter of the hole, even if the rim outer diameter is the same, a smaller rim inner diameter is more suitable for higher density. Therefore, the laser beam wavelength is 830 nm, and the numerical aperture (NA) of the objective lens is 830 nm.
) When performing high-density recording with a pit spacing of 1.4 μm on an information recording medium manufactured with a conventional media configuration using a 0.53 optical head, the recording laser beam can secure a sufficiently large reproduced signal as an electrical signal. The problem was that the power range (power margin) was small, making it unsuitable for high-density recording. An object of the present invention is to provide an information recording medium that has good recording and reproduction characteristics, good stability, and is suitable for high-density recording. [Means for Solving the Problems] The above object is to (1) provide an information recording medium having at least a recording film on which a recess or a hole is formed by irradiation with a recording energy beam on a substrate; An information recording medium characterized in that a recording auxiliary layer containing a compound of a chalcogen element and a metal element as a main component is provided adjacent to at least the interface of the film on the substrate side; (2) the substrate side of the recording film; The information recording medium according to item 1 above, characterized in that a recording auxiliary layer is further provided adjacent to the opposite interface, (3) the melting point of the recording auxiliary layer is higher than the melting point of the recording film. (4) The information recording medium as described in 1.2 or 3 above, wherein the compound constituting the recording auxiliary layer contains a Se compound as a main component; (5) The above Se compound has +sb, Sn, In, Bi,
4. The information recording medium according to 4 above, which is a compound of Ga, Ge, Pb or Zn and Se. (6) The information recording medium according to 1.2 or 3 above, characterized in that the compound constituting the recording auxiliary layer contains an S compound as a main component; (7) the S compound comprises Sb, Sn, In, Bj, Ga
, Ge, Pb, or a compound of Zn and S, (8) the information recording medium according to any one of 1 to 7 above, characterized in that the recording film contains at least Ta. This is achieved using an information recording medium. In the information recording medium of the present invention, adjacent to at least the substrate side interface of the recording film, so that the rim inner diameter of the hole formed by irradiation with the recording energy beam is small,
A recording auxiliary layer containing a compound of a chalcogen element and a metal element as a main component is provided. When the information recording medium has a base film, the recording auxiliary layer is provided between the base film and the recording film. The recording auxiliary layer. It may be further provided adjacent to the interface opposite to the substrate side of the recording film. The respective recording auxiliary layers may be composed mainly of the same compound or may be composed mainly of different compounds. In addition, the thickness of the recording auxiliary layer is 1 nm, since the inner diameter of the rim of the formed hole is small and the power margin is large.
The thickness is preferably 200 nm or more. It is more preferably 2 nm or more and 1100 nm or less, and most preferably 4 nm or more and 50 nm or less. The melting point of the recording auxiliary layer is preferably higher than that of the recording film. When a Te-based recording film is used, the melting point of the recording film is lower than 450'C, which is the melting point of Te. Therefore, the melting point of the recording auxiliary layer is preferably 450'C or higher, which is the melting point of Te, and more preferably 500''C or higher.The components of the recording auxiliary layer include: It is preferable to use a Se compound as the main component.In addition, in terms of the low absorption rate of recording light in the recording auxiliary layer, Se
It is preferable that the main component is a compound or an S compound. Among Se compounds, compounds of Se and sb (S b2
S e3), a compound of S e and Sn (S n S e
, 5nSe2), a compound of Se and In (I n4Se,
, ■ nSe , I n, S e 7 ,
I n, S e, , I n 2 S
e 3) Compound of Se and B1 (B i S e,
B i2S e, ), a compound of Se and Ga (GaSe
, Ga2Se3). Compound of Se and Ge (GeSe-Ge2Se,), Se
A compound of and pb (PbSe) and a compound of Se and Zn (
ZnSe) has a melting point of 450', which is the melting point of Te.
Since it is C or more, it is preferable in that the recording density becomes high. Among S compounds, compounds of S and sb (sb2s,)
, a compound of s and Sn (SnS, 5n2S1.5nS2
), compound of S and In (InSe. In, S,, In, B4.I n2S,), S and Bi
compound (B j2s3), compound of S and Ga (Ga
, S, GaS, Ga, S, ), compound of S and Ge (G
e S, Ge2S, ), a compound of S and pb (pbs), and a compound of S and Zn (ZnS) all have melting points of 450° C. or higher, which is the melting point of Te, and are therefore preferable in terms of increasing recording density. . In addition, among the above Se and S compound systems, Se and Sn,
Se and In, Se and Bj, Se and Ga, Se and Ge,
The binary phases of S, 5n-5 and In, S and Ga, and S and Ge contain two or more types of compounds. Good results can also be obtained using a mixture of two or more of these compounds. In addition to the above-mentioned compound, the recording auxiliary layer may contain a mixture of constituent elements of the compound, other chalcogen elements, and metal elements. It is preferable that these elements are added in an amount of 1.0 at% or less. It is more preferable to add 5 at% or less. In particular, by adding Se, the oxidation resistance of the recording auxiliary layer can be improved without substantially affecting the recording characteristics. As for the recording film composition, if inorganic substances are the main component, Te-based, S
Good characteristics can be obtained with e-type or other metal-based materials. In particular, Te-3e type, Te-C type, etc. containing Te are preferable. The thickness of the recording film is preferably in the range of 10 to 50 nm. The information recording medium of the present invention can be in the form of a disk, tape, card, or the like.

【作用】[Effect]

本発明の情報記録媒体を用いると、記録補助層を形成す
る物質の融点が記録膜の融点よりも高い場合には、記録
膜溶融時に記録補助層が融解しないので、溶融した記録
膜の記録補助層に対するぬれ性が大きいために、形成さ
れたリムのリム幅が太くなる。記録補助層も溶融し、孔
が形成されたとき、リム内径が十分小さい。従って、記
録したピットの前後及び左右、直ぐ隣にある記録ピット
からの影響を低く押えることが可能となる。一方、記録
孔からの再生信号は孔のリム内径に依存しているため、
リム外径が同じでもリム内径の小さい方が高密度化に適
している。そこで、レーザ光波長830nm、対物レン
ズの開口数(NA)が0.53の光ヘッドを用いて、本
発明の記録補助層を有する媒体構成で作製した情報記録
媒体上にピット間隔が1.4μmの高密度記録を行なっ
た場合、電気信号として十分大きな再生信号を確保でき
る記録レーザ光のパワー領域(パワーマージン)が大き
い。従って、本発明の記録補助層を有する媒体構成で作
製した情報記録媒体は高密度記録に適する。
When the information recording medium of the present invention is used, when the melting point of the substance forming the recording auxiliary layer is higher than the melting point of the recording film, the recording auxiliary layer does not melt when the recording film melts, so that the recording auxiliary layer does not melt when the recording film is melted. Due to the high wettability of the layer, the rim width of the formed rim increases. When the recording auxiliary layer is also melted and holes are formed, the rim inner diameter is sufficiently small. Therefore, it is possible to suppress the influence from the recorded pits immediately adjacent to the recorded pits in the front, rear, right and left directions. On the other hand, since the reproduction signal from the recording hole depends on the inner diameter of the rim of the hole,
Even if the rim outer diameter is the same, a smaller rim inner diameter is more suitable for higher density. Therefore, using an optical head with a laser beam wavelength of 830 nm and an objective lens having a numerical aperture (NA) of 0.53, a pit interval of 1.4 μm was formed on an information recording medium manufactured with a medium configuration having a recording auxiliary layer of the present invention. When high-density recording is performed, the power range (power margin) of the recording laser beam is large enough to ensure a sufficiently large reproduction signal as an electrical signal. Therefore, an information recording medium manufactured with a medium configuration having a recording auxiliary layer according to the present invention is suitable for high-density recording.

【実施例】【Example】

以下1本発明を実施例によって詳細に説明する。 実施例1 第1図(a)に作製したディスクの断面模式図を示して
説明する。直径300mm、厚さ1.2mmのディスク
状化学強化ガラス板を基板1として用いた。予め、Ni
スタンパ(図示せず)上に下地膜となるニトロセルロー
スの1.5%酢酸n−ブチル溶液を回転塗布し、乾燥し
た。この−Hに紫外線硬化樹脂を滴下し、さらにこの上
に上記基板1を押し付け、紫外線照射により樹脂を硬化
し、1.6μmピッチのトラッキング用の案内溝とアド
レスを示すプリピットを表面に有する下地膜3及び紫外
線硬化樹脂層2を形成し、Niスタンパを離し、レプリ
カ基板を作製した。 次に、上記レプリカ基板上に5b2Se、の組成の記録
補助層4(融点590℃)を10nmの厚さに、通電加
熱蒸着法で形成し、その上にPb。 Tel1aSe15の組成の記録膜5(融点430℃)
を30nmの厚さに、通電加熱蒸着法で形成し、ディス
クAを作製した。 一方、第1図(a)に示すように、上記と同様にレプリ
カ基板上に5b2Se、の組成の記録補助fg4、Pb
、Te、。S eisの組成の記録膜5をそれぞれ10
nm、30nmの厚さに蒸着した上に、さらにS b、
S e、の組成の記録補助層4を10nmの厚さに蒸着
し、ディスクBを作製した。 また比較のため、補助層が無く、pb、Te、。 Se、、の組成の記録膜5のみ30nmの厚さで蒸着し
た従来と同じ構造のディスクCを作製した。 ディスクCの断面模式図を第8図に示す。 上記ディスクA、B及びCの記録、再生特性の測定を次
のようにして行なった。ディスクを90Orpmで回転
させ、波長830nmの半導体レーザ光を開口数(NA
)0.53のレンズで集光し、トラッキング用の案内溝
(グループ)とグループの間の平坦部に記録した。読出
し光は、記録膜に変形を起こさないように1mWの連続
光とした。記録は、半径140mmの位置(外周部)に
行ない、記録密度を高くして記録ピット間隔が1.4μ
mとなるように9.4MHzの信号を記録した。ここで
は、記録パルス幅を42nsとした。ディスクA、B及
びCについて、記録パワーを変えて記録した時の再生信
号変調度の記録パワー依存性を第2図に示す。ここで、
再生信号変調度は次式で定義する。 (再生信号変調度) =(記録点の再生信号振幅強度)/ (プリピットの再生信号振幅強度) スライスレベルを0.4とした時のパワーマージン(再
生信号変調度が0.4以上となる記録パワー領域)はデ
ィスクAでは8.4〜13.6の間で5.2mW、ディ
スクBでは8.3〜1.2.0mWの間で3.7mW、
ディスクCでは8.2〜10.6mWの間で、2.4m
Wである。従って、本発明のディスクA及びBでは従来
構造のディスクCに比べて高密度記録時のパワーマージ
ンが大幅に広がった。ディスクの構成としてはディスク
Aの方がディスクBより好ましい。 また、ここで記録した時に形成された記録ピット(記録
孔)の断面図を第3図に示す。この断面におけるリム内
径、外径のパワー依存性をディスクA、B、C各々につ
いて、第4図に示す。リム外径はディスクA、B、Cに
かかわらず、同じ記録パワー依存性を示すが、リム内径
はディスクCが最も小さく、ついでディスクBで、ディ
スクAはリム内径が大きい。 ディスクAにおいて、Sb2Se3補助層の膜厚を変え
た時、上記測定と同様な高密度記録時のスライスレベル
を0.4とした時のパワーマージン(再生信号変調度が
0.4以上となる記録パワー領域)の膜厚依存性を第5
図に示す。 上記実施例における記録補助層として、5b2Se、の
代わりに、Seを含む2元系の化合物であるPb5e及
びZn5eを用いた結果を第1表に示す。 また、上記実施例における記録補助層として、S b2
Se、の代わりに、Sを含む2元系の化合物であるB 
i2S、、pbs及びZnSを用いた結果を第2表に示
す。 第1表 (以下余白) 第2表 上記各実施例における記録補助層にSeを5%添加した
ところ、情報記録媒体のパワーマージンは各実施例より
やや低下したが、耐環境性が向上し、80℃、相対湿度
90%における寿命が2倍以上長くなった。 なお、基板材料には、上記実施例で用いたガラス基板の
代わりに、ポリカーボネイト、PMMA、ポリオレフィ
ン等のプラスチック基板を用いても同様な結果が得られ
た。下地膜としては、ニトロセルロースの他に、アセチ
ルセルロース、フタロシアニン色素、グアニン、フッ素
樹脂、ポリアミド、ポリイミド等を用いても同様な結果
が得られた。 記録膜として、上記P b −T e −S s系の代
わりに、Te−C系、Te−5b系、Te−0系等の他
のカルコゲナイド系記録膜を用いても同様な結果が得ら
れた。 実施例2 次に、実施例1における記録補助層に用いた系と異なり
、2種類以上の化合物を有するSe又はSを含む2元系
の化合物を記録補助層として用いたディスクを実施例1
と同様にして作製し、記録特性を実施例1と全く同じ条
件下で測定した。 ディスクAの構造のディスクに5n−Se系の化合物で
ある5nSe及び5nSe2をそれぞれ記録補助層に用
いたディスクでのスライスレベルを0.4とした時のパ
ワーマージン(再生信号変調度が0.4以上となる記録
パワー領域)の記録補助層膜厚依存性を測定した結果を
第6図に示す。 上記実施例において、記録補助層の膜厚を10nmとし
、記録補助層に、5nSe、5nSe。 とそれらの構成元素のSeとSnを種々の比率で混合し
て用いた時のパワーマージンの結果を第7図に示す。図
の横軸は全組成物中のSeの濃度である。Seの組成比
が45〜72 a t、%でパワーマージンが4mW以
上あり、特に、5nSe及び5nSe2付近の組成及び
これら2種の化合物の間の組成では、パワーマージンが
5mW以上ある。 上記実施例における記録補助層として、5n−8e系の
代わりに、同じく2種類以上の化合物を有するSeを含
む2元系であるIn−5e系、B i −S s系、G
a−3e系及びGe−3e系の化合物やそれらの混合物
を用いた結果を第3表に示す。2種以上の化合物及びそ
れらの混合物も。 パワーマージンは5mW以上である。 また、上記実施例における記録補助層として、5n−3
e系の代わりに、同じく2種類以上の化合物を有するS
を含む2元系である5n−3系。 In−5系、Ga−8系及びGe−3系の化合物やそれ
らの混合物並びに5b−s系の化合物を用いた結果を第
4表に示す3これらの化合物及びこれらの混合物も、パ
ワーマージンは5mW以上である。 (以下余白) 第三衣 第四機 上記それぞれの実施例における記録補助層にSeを5%
添加したところ、情報記録媒体のパワーマージンは各実
施例よりやや低下したが、耐環境性が向上し、80℃、
相対湿度90%における寿命が2倍以上長くなった。 基板材料には、上記実施例で用いたガラス基板の代わり
に、ポリカーボネイト、PMMA、ポリオレフィン等の
プラスチック基板を用いても同様な結果が得られた。 下地膜としては、ニトロセルロースの他に、アセチルセ
ルロース、フタロシアニン色素、グアニン、フッ素樹脂
、ポリアミド、ポリイミド等を用いても同様な結果が得
られた。 記録膜として、上記Pb−Te−5e系の代わりに、T
e−C系、Te−5b系、Te−0系等の他のカルコゲ
ナイド系記録膜を用いても同様な結果が得られた。
Hereinafter, the present invention will be explained in detail by way of examples. Example 1 An explanation will be given with reference to FIG. 1(a), which shows a schematic cross-sectional view of a manufactured disk. A disk-shaped chemically strengthened glass plate with a diameter of 300 mm and a thickness of 1.2 mm was used as the substrate 1. Ni in advance
A 1.5% n-butyl acetate solution of nitrocellulose to serve as a base film was spin-coated onto a stamper (not shown) and dried. An ultraviolet curable resin is dropped onto this -H, the substrate 1 is pressed onto this, the resin is cured by ultraviolet irradiation, and a base film is formed which has guide grooves for tracking at a pitch of 1.6 μm and pre-pits indicating addresses on the surface. 3 and an ultraviolet curing resin layer 2 were formed, the Ni stamper was removed, and a replica substrate was produced. Next, a recording auxiliary layer 4 having a composition of 5b2Se (melting point: 590° C.) is formed on the replica substrate to a thickness of 10 nm by current heating vapor deposition, and Pb is deposited thereon. Recording film 5 with a composition of Tel1aSe15 (melting point 430°C)
was formed to a thickness of 30 nm by an electric heating vapor deposition method to produce a disk A. On the other hand, as shown in FIG. 1(a), recording aids of the composition of 5b2Se, fg4, Pb
,Te,. 10 each of the recording films 5 having a composition of Seis.
In addition to depositing S b to a thickness of 30 nm and 30 nm,
A recording auxiliary layer 4 having a composition of S e was deposited to a thickness of 10 nm to prepare a disc B. For comparison, there is no auxiliary layer, pb, Te,. A disk C having the same structure as the conventional one was manufactured in which only the recording film 5 having a composition of Se was deposited to a thickness of 30 nm. A schematic cross-sectional view of the disk C is shown in FIG. The recording and reproducing characteristics of the discs A, B, and C were measured as follows. The disk is rotated at 90 rpm and a semiconductor laser beam with a wavelength of 830 nm is applied to the numerical aperture (NA).
) A 0.53 lens focused the light and recorded it on the flat area between the tracking guide groove (group) and the group. The readout light was a continuous light of 1 mW so as not to cause deformation of the recording film. Recording was performed at a position with a radius of 140 mm (outer periphery), and the recording density was increased to a recording pit interval of 1.4 μm.
A 9.4 MHz signal was recorded so that the frequency was 9.4 MHz. Here, the recording pulse width was set to 42 ns. FIG. 2 shows the dependence of the reproduction signal modulation degree on the recording power for discs A, B, and C when recording was performed at different recording powers. here,
The reproduction signal modulation degree is defined by the following equation. (Reproduction signal modulation degree) = (Reproduction signal amplitude strength at recording point) / (Reproduction signal amplitude strength at pre-pit) Power margin when slice level is set to 0.4 (recording where reproduction signal modulation degree is 0.4 or more) Power range) is 5.2 mW between 8.4 and 13.6 for disk A, 3.7 mW between 8.3 and 1.2.0 mW for disk B,
For disk C, between 8.2 and 10.6 mW, 2.4 m
It is W. Therefore, in the discs A and B of the present invention, the power margin during high-density recording was significantly expanded compared to the disc C of the conventional structure. Regarding the configuration of the disk, disk A is more preferable than disk B. Further, FIG. 3 shows a cross-sectional view of recording pits (recording holes) formed during recording here. The power dependence of the rim inner diameter and outer diameter in this cross section is shown in FIG. 4 for each of disks A, B, and C. The rim outer diameter shows the same recording power dependence regardless of disks A, B, and C, but disk C has the smallest rim inner diameter, followed by disk B, and disk A has the largest rim inner diameter. In disk A, when the film thickness of the Sb2Se3 auxiliary layer is changed and the slice level is set to 0.4 during high-density recording similar to the above measurement, the power margin (recording where the reproduction signal modulation degree is 0.4 or more) The film thickness dependence of
As shown in the figure. Table 1 shows the results when Pb5e and Zn5e, which are binary compounds containing Se, were used instead of 5b2Se as the recording auxiliary layer in the above example. Further, as the recording auxiliary layer in the above embodiment, S b2
B, which is a binary compound containing S, instead of Se.
Table 2 shows the results using i2S, pbs and ZnS. Table 1 (blank below) Table 2 When 5% Se was added to the recording auxiliary layer in each of the above examples, the power margin of the information recording medium was slightly lower than in each example, but the environmental resistance was improved. The lifespan at 80°C and 90% relative humidity is more than twice as long. Note that similar results were obtained when a plastic substrate such as polycarbonate, PMMA, or polyolefin was used as the substrate material instead of the glass substrate used in the above example. Similar results were obtained using acetylcellulose, phthalocyanine dye, guanine, fluororesin, polyamide, polyimide, etc. as the base film, in addition to nitrocellulose. Similar results can be obtained by using other chalcogenide recording films such as Te-C, Te-5b, and Te-0 instead of the P b -T e -S s recording film. Ta. Example 2 Next, unlike the system used for the recording auxiliary layer in Example 1, a disk in which a binary compound containing Se or S having two or more types of compounds was used as the recording auxiliary layer was prepared.
The recording characteristics were measured under exactly the same conditions as in Example 1. The power margin when the slice level is set to 0.4 on a disk with the structure of disk A using 5nSe and 5nSe2, which are 5n-Se compounds, in the recording auxiliary layer (reproduction signal modulation degree is 0.4 FIG. 6 shows the results of measuring the film thickness dependence of the recording auxiliary layer in the above recording power range. In the above example, the thickness of the recording auxiliary layer was 10 nm, and the recording auxiliary layer contained 5nSe and 5nSe. FIG. 7 shows the results of the power margin when the constituent elements Se and Sn were mixed in various ratios. The horizontal axis of the figure is the concentration of Se in the total composition. When the composition ratio of Se is 45 to 72 at.%, the power margin is 4 mW or more, and in particular, the power margin is 5 mW or more at compositions near 5 nSe and 5 nSe2 or between these two types of compounds. As the recording auxiliary layer in the above embodiment, instead of the 5n-8e system, In-5e system, which is also a binary system containing Se and having two or more types of compounds, B i -S s system, G
Table 3 shows the results using a-3e and Ge-3e compounds and mixtures thereof. Also two or more compounds and mixtures thereof. The power margin is 5 mW or more. Further, as the recording auxiliary layer in the above embodiment, 5n-3
Instead of e-type, S which also has two or more types of compounds
The 5n-3 system is a binary system containing. Table 4 shows the results using In-5, Ga-8, and Ge-3 compounds and mixtures thereof, as well as 5bs-s compounds.3 These compounds and mixtures also have a power margin of It is 5 mW or more. (Left below) 3rd coat 4th machine 5% Se in the recording auxiliary layer in each of the above examples
When added, the power margin of the information recording medium was slightly lower than in each example, but the environmental resistance was improved and
The lifespan at 90% relative humidity is more than twice as long. Similar results were obtained when a plastic substrate such as polycarbonate, PMMA, or polyolefin was used as the substrate material instead of the glass substrate used in the above example. Similar results were obtained using acetylcellulose, phthalocyanine dye, guanine, fluororesin, polyamide, polyimide, etc. as the base film, in addition to nitrocellulose. As a recording film, instead of the above Pb-Te-5e system, T
Similar results were obtained using other chalcogenide recording films such as e-C, Te-5b, and Te-0.

【発明の効果】【Effect of the invention】

以上説明したように2本発明による情報記録用媒体を用
いれば、記録した孔のリム内径が小さいので、高密度記
録を行なった場合でも良好な再生信号が得られ、クロス
トークも小さく、記録パワーマージンも大きいという効
果がある。
As explained above, if the information recording medium according to the present invention is used, the rim inner diameter of the recorded hole is small, so even when high-density recording is performed, a good reproduction signal can be obtained, crosstalk is small, and the recording power is It also has the effect of having a large margin.

【図面の簡単な説明】[Brief explanation of drawings]

第1図(a)及び第1図(b)は本発明の一実施例の情
報記録媒体の構造を示す断面模式図、第2図は本発明の
実施例における再生信号変調度の記録パワー依存性を示
す図、第3図は記録ピッ1〜(記録孔)の断面図、第4
図は本発明の情報記録用媒体におけるリム内、外径の記
録パワー依存性を示す図、第5図は本発明の実施例のデ
ィスクAにおける5b2Se、記録補助層の膜厚依存性
を示す図、第6図は本発明の実施例のディスクAにおけ
る5nSe及びS n S e、記録補助層の膜厚依存
性を示す図、第7図は1本発明の実施例のディスクAに
おけるS n −S e系記録補助層の組成依存性を示
す図、第8図は従来の情報記録媒体の構造を示す断面模
式図である。 1・・・基板     2・・・紫外線硬化樹脂層3・
・・下地膜    4・・・記録補助層5・・・記録膜 7・・外径 6・・リム 8・・・内径
FIG. 1(a) and FIG. 1(b) are schematic cross-sectional views showing the structure of an information recording medium according to an embodiment of the present invention, and FIG. 2 is a dependence of the reproduction signal modulation degree on recording power in the embodiment of the present invention. Fig. 3 is a sectional view of recording pits 1 to (recording holes), Fig. 4 shows the
The figure shows the dependence of the recording power on the inner and outer diameters of the rim in the information recording medium of the present invention, and FIG. 5 shows the dependence on the film thickness of the 5b2Se and recording auxiliary layer in the disc A of the embodiment of the present invention. , FIG. 6 is a diagram showing the dependence of 5nSe and S n Se on disk A according to an embodiment of the present invention, and the film thickness of the recording auxiliary layer, and FIG. FIG. 8, which is a diagram showing the composition dependence of the Se-based recording auxiliary layer, is a schematic cross-sectional view showing the structure of a conventional information recording medium. 1... Substrate 2... Ultraviolet curing resin layer 3.
... Base film 4 ... Recording auxiliary layer 5 ... Recording film 7 ... Outer diameter 6 ... Rim 8 ... Inner diameter

Claims (1)

【特許請求の範囲】 1、基板上に、記録用エネルギービームの照射を受けて
凹部又は孔部が形成される記録膜を少なくとも有する情
報記録媒体において、該記録膜の少なくとも基板側の界
面に隣接して、カルコゲン元素と金属元素との化合物を
主成分とする記録補助層を設けたことを特徴とする情報
記録媒体。 2、上記記録膜の基板側と逆の界面に隣接してさらに記
録補助層を設けたことを特徴とする請求項1に記載の情
報記録媒体。 3、上記記録補助層の融点が上記記録膜の融点以上であ
ることを特徴とする請求項1又は2に記載の情報記録媒
体。 4、上記記録補助層を構成する化合物は、Se化合物を
主成分とすることを特徴とする請求項1、2又は3に記
載の情報記録媒体。 5、上記Se化合物は、Sb、Sn、In、Bi、Ga
、Ge、Pb又はZnとBeとの化合物である請求項4
に記載の情報記録媒体。 6、上記記録補助層を構成する化合物は、S化合物を主
成分とすることを特徴とする請求項1、2又は3に記載
の情報記録媒体。 7、上記S化合物は、Sb、Sn、In、Bi、Ga、
Ge、Pb又はZnとSとの化合物である請求項6に記
載の情報記録媒体。 8、上記記録膜は、少なくともTeを含有することを特
徴とする請求項1から7のいずれかに記載の情報記録媒
体。
[Claims] 1. In an information recording medium having at least a recording film on a substrate in which a concave portion or a hole is formed by being irradiated with a recording energy beam, an information recording medium adjacent to at least the interface of the recording film on the substrate side. An information recording medium comprising: a recording auxiliary layer containing a compound of a chalcogen element and a metal element as a main component. 2. The information recording medium according to claim 1, further comprising a recording auxiliary layer adjacent to an interface opposite to the substrate side of the recording film. 3. The information recording medium according to claim 1 or 2, wherein the melting point of the recording auxiliary layer is higher than the melting point of the recording film. 4. The information recording medium according to claim 1, 2 or 3, wherein the compound constituting the recording auxiliary layer contains a Se compound as a main component. 5. The above Se compound is Sb, Sn, In, Bi, Ga
, Ge, Pb, or a compound of Zn and Be.
The information recording medium described in . 6. The information recording medium according to claim 1, 2 or 3, wherein the compound constituting the recording auxiliary layer contains an S compound as a main component. 7. The above S compound is Sb, Sn, In, Bi, Ga,
The information recording medium according to claim 6, which is a compound of Ge, Pb, or Zn and S. 8. The information recording medium according to claim 1, wherein the recording film contains at least Te.
JP2028511A 1989-11-24 1990-02-09 Information recording medium Pending JPH03235231A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2028511A JPH03235231A (en) 1990-02-09 1990-02-09 Information recording medium
US07/615,914 US5273860A (en) 1989-11-24 1993-11-20 Information recording medium

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2028511A JPH03235231A (en) 1990-02-09 1990-02-09 Information recording medium

Publications (1)

Publication Number Publication Date
JPH03235231A true JPH03235231A (en) 1991-10-21

Family

ID=12250704

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2028511A Pending JPH03235231A (en) 1989-11-24 1990-02-09 Information recording medium

Country Status (1)

Country Link
JP (1) JPH03235231A (en)

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