JPH03165340A - Information recording medium - Google Patents
Information recording mediumInfo
- Publication number
- JPH03165340A JPH03165340A JP1303257A JP30325789A JPH03165340A JP H03165340 A JPH03165340 A JP H03165340A JP 1303257 A JP1303257 A JP 1303257A JP 30325789 A JP30325789 A JP 30325789A JP H03165340 A JPH03165340 A JP H03165340A
- Authority
- JP
- Japan
- Prior art keywords
- film
- recording
- recording medium
- information recording
- auxiliary film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 claims abstract description 17
- 229910052797 bismuth Inorganic materials 0.000 claims abstract description 14
- 229910052711 selenium Inorganic materials 0.000 claims abstract description 11
- 229910052717 sulfur Inorganic materials 0.000 claims abstract description 10
- 229910052714 tellurium Inorganic materials 0.000 claims abstract description 9
- 229910052745 lead Inorganic materials 0.000 claims description 14
- 229910052741 iridium Inorganic materials 0.000 claims description 5
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical group [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 claims description 5
- 229910052715 tantalum Inorganic materials 0.000 claims description 5
- 229910052725 zinc Inorganic materials 0.000 claims description 5
- 229910052726 zirconium Inorganic materials 0.000 claims description 5
- 229910052785 arsenic Inorganic materials 0.000 claims description 4
- 229910052735 hafnium Inorganic materials 0.000 claims description 4
- 229910052738 indium Inorganic materials 0.000 claims description 4
- 229910052742 iron Inorganic materials 0.000 claims description 4
- 229910052702 rhenium Inorganic materials 0.000 claims description 4
- 229910052707 ruthenium Inorganic materials 0.000 claims description 4
- 229910052706 scandium Inorganic materials 0.000 claims description 4
- 229910052720 vanadium Inorganic materials 0.000 claims description 4
- 229910052727 yttrium Inorganic materials 0.000 claims description 4
- 229910052787 antimony Inorganic materials 0.000 claims description 3
- 229910052804 chromium Inorganic materials 0.000 claims description 3
- 229910052732 germanium Inorganic materials 0.000 claims description 3
- 229910052737 gold Inorganic materials 0.000 claims description 3
- 229910052750 molybdenum Inorganic materials 0.000 claims description 3
- 229910052759 nickel Inorganic materials 0.000 claims description 3
- 229910052758 niobium Inorganic materials 0.000 claims description 3
- 229910052763 palladium Inorganic materials 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 229910052716 thallium Inorganic materials 0.000 claims description 3
- 229910052718 tin Inorganic materials 0.000 claims description 3
- 229910052719 titanium Inorganic materials 0.000 claims description 3
- 229910052721 tungsten Inorganic materials 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 2
- -1 and T. l Inorganic materials 0.000 claims description 2
- 229910052802 copper Inorganic materials 0.000 claims description 2
- 229910052697 platinum Inorganic materials 0.000 claims description 2
- 229910052703 rhodium Inorganic materials 0.000 claims description 2
- 229910052709 silver Inorganic materials 0.000 claims description 2
- 229910052739 hydrogen Inorganic materials 0.000 claims 1
- 150000004770 chalcogenides Chemical class 0.000 abstract description 4
- 230000003247 decreasing effect Effects 0.000 abstract 1
- 238000010348 incorporation Methods 0.000 abstract 1
- 230000002035 prolonged effect Effects 0.000 abstract 1
- 239000007787 solid Substances 0.000 abstract 1
- 239000010408 film Substances 0.000 description 84
- 239000000463 material Substances 0.000 description 8
- 238000010586 diagram Methods 0.000 description 7
- 239000011347 resin Substances 0.000 description 6
- 229920005989 resin Polymers 0.000 description 6
- 229910052796 boron Inorganic materials 0.000 description 4
- 239000010410 layer Substances 0.000 description 4
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- 239000000020 Nitrocellulose Substances 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 229920001220 nitrocellulos Polymers 0.000 description 3
- 239000004925 Acrylic resin Substances 0.000 description 2
- 229920000178 Acrylic resin Polymers 0.000 description 2
- SMEGJBVQLJJKKX-HOTMZDKISA-N [(2R,3S,4S,5R,6R)-5-acetyloxy-3,4,6-trihydroxyoxan-2-yl]methyl acetate Chemical compound CC(=O)OC[C@@H]1[C@H]([C@@H]([C@H]([C@@H](O1)O)OC(=O)C)O)O SMEGJBVQLJJKKX-HOTMZDKISA-N 0.000 description 2
- 229940081735 acetylcellulose Drugs 0.000 description 2
- 229920002301 cellulose acetate Polymers 0.000 description 2
- 229910052798 chalcogen Inorganic materials 0.000 description 2
- 150000001787 chalcogens Chemical class 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- UYTPUPDQBNUYGX-UHFFFAOYSA-N guanine Chemical compound O=C1NC(N)=NC2=C1N=CN2 UYTPUPDQBNUYGX-UHFFFAOYSA-N 0.000 description 2
- 229910052748 manganese Inorganic materials 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 239000004033 plastic Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 240000006829 Ficus sundaica Species 0.000 description 1
- 239000004952 Polyamide Substances 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- FJWGYAHXMCUOOM-QHOUIDNNSA-N [(2s,3r,4s,5r,6r)-2-[(2r,3r,4s,5r,6s)-4,5-dinitrooxy-2-(nitrooxymethyl)-6-[(2r,3r,4s,5r,6s)-4,5,6-trinitrooxy-2-(nitrooxymethyl)oxan-3-yl]oxyoxan-3-yl]oxy-3,5-dinitrooxy-6-(nitrooxymethyl)oxan-4-yl] nitrate Chemical compound O([C@@H]1O[C@@H]([C@H]([C@H](O[N+]([O-])=O)[C@H]1O[N+]([O-])=O)O[C@H]1[C@@H]([C@@H](O[N+]([O-])=O)[C@H](O[N+]([O-])=O)[C@@H](CO[N+]([O-])=O)O1)O[N+]([O-])=O)CO[N+](=O)[O-])[C@@H]1[C@@H](CO[N+]([O-])=O)O[C@@H](O[N+]([O-])=O)[C@H](O[N+]([O-])=O)[C@H]1O[N+]([O-])=O FJWGYAHXMCUOOM-QHOUIDNNSA-N 0.000 description 1
- 125000000484 butyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000005345 chemically strengthened glass Substances 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- RBTKNAXYKSUFRK-UHFFFAOYSA-N heliogen blue Chemical compound [Cu].[N-]1C2=C(C=CC=C3)C3=C1N=C([N-]1)C3=CC=CC=C3C1=NC([N-]1)=C(C=CC=C3)C3=C1N=C([N-]1)C3=CC=CC=C3C1=N2 RBTKNAXYKSUFRK-UHFFFAOYSA-N 0.000 description 1
- 238000001746 injection moulding Methods 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 229910052762 osmium Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000001007 phthalocyanine dye Substances 0.000 description 1
- 229920002647 polyamide Polymers 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 229920000098 polyolefin Polymers 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000006104 solid solution Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Landscapes
- Thermal Transfer Or Thermal Recording In General (AREA)
- Optical Record Carriers And Manufacture Thereof (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、レーザ光、電子線等のエネルギービームによ
って記録することが可能な情報記録媒体に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to an information recording medium that can be recorded with an energy beam such as a laser beam or an electron beam.
レーザ光等のエネルギービームを情報記録媒体に照射し
、記録膜に凹部又は孔部を形成して記録すること、例え
ば映像や音声等のアナログ信号をFM変調した信号や電
子計算機のデータやデジタルオーディオ信号等のデジタ
ル情報をリアルタイムで記録することが行なわれている
。このような従来の記録媒体は、基板、下地膜及び記録
膜から成っている。基板には、フォトポリメリゼーショ
ン法でトラッキング用の案内溝を有する紫外線硬化樹脂
層を形成したガラス円板若しくはアクリル樹脂等のプラ
スチック円板又は射出成形で案内溝を形成したポリカー
ボネイト、アクリル樹脂、ポリオレフィン等のプラスチ
ック円板を用いている。Recording by irradiating an energy beam such as a laser beam onto an information recording medium to form recesses or holes in the recording film, such as FM modulated signals of analog signals such as video and audio, computer data, and digital audio. Digital information such as signals is recorded in real time. Such a conventional recording medium consists of a substrate, a base film, and a recording film. The substrate may be a glass disk or a plastic disk such as acrylic resin on which an ultraviolet curable resin layer with tracking guide grooves is formed by photopolymerization, or polycarbonate, acrylic resin, or polyolefin with guide grooves formed by injection molding. A plastic disc such as the following is used.
下地膜にはニトロセルロース、アセチルセルロース、銅
フタロシアニン等の溶媒可溶性樹脂又はフッ素樹脂等の
スパッタリング可能な樹脂を用いている。記録膜にはT
eを主成分とする薄膜を用いている。なお、このような
記録媒体の下地膜に関しては、特開昭57−55544
に記載されている。また、記録膜組成に関しては、特開
昭57−38189及び特開昭57−66996に記載
されている。さらにまた、下地層と記録膜との間に保護
層を置くことは特開昭58−224446に記載されて
いる。For the base film, a solvent-soluble resin such as nitrocellulose, acetylcellulose, or copper phthalocyanine, or a sputterable resin such as a fluororesin is used. T on the recording film
A thin film containing e as a main component is used. Regarding the base film of such a recording medium, Japanese Patent Application Laid-Open No. 57-55544
It is described in. Further, the composition of the recording film is described in JP-A-57-38189 and JP-A-57-66996. Furthermore, the provision of a protective layer between the underlayer and the recording film is described in JP-A-58-224446.
上記従来技術は、記録媒体のエネルギービーム照射部の
温度分布、溶融した記録膜の粘性、溶融した記録膜と下
地膜とのぬれ性について十分配慮されておらず、エネル
ギービームの照射を受けて形成された凹部又は孔(以下
、単に孔という)のリム幅は小さく、リム内径が大きく
なるという問題があった。記録した孔の再生信号は、孔
のリム内径により影響をうけ、リム外径は同じでもリム
内径が小さい方が高密度化に適している。それ故従来の
記録媒体に高密度記録を行なうと、記録光のパワーマー
ジン(十分な再生信号強度を確保できる記録光のパワー
領域)が小さいという問題があった。The above conventional technology does not give sufficient consideration to the temperature distribution of the energy beam irradiated part of the recording medium, the viscosity of the melted recording film, and the wettability of the melted recording film and the base film. The problem is that the rim width of the recess or hole (hereinafter simply referred to as hole) is small and the rim inner diameter becomes large. The reproduced signal of a recorded hole is affected by the rim inner diameter of the hole, and even if the rim outer diameter is the same, a smaller rim inner diameter is more suitable for higher density. Therefore, when performing high-density recording on conventional recording media, there is a problem in that the power margin of the recording light (the power range of the recording light that can ensure sufficient reproduction signal strength) is small.
本発明の目的は、記録時に大きなパワーマージンが得ら
れる記録媒体を提供することにある。An object of the present invention is to provide a recording medium that provides a large power margin during recording.
上記目的は、(1)基板上に、エネルギービームの照射
を受けて凹部又は孔部が形成される記録膜を少なくとも
有する情報記録媒体において、該記録膜の少なくとも一
方の面に隣接して、Se。The above object is to provide (1) an information recording medium having at least a recording film on a substrate in which a recess or a hole is formed by irradiation with an energy beam; .
Sからなる群から選ばれた少なくとも一種の元素を主成
分とする補助膜を設けたことを特徴とする情報記録媒体
、(2)上記補助膜は、少なくともSeを有することを
特徴とする上記1に記載の情報記録媒体、(3)上記補
助膜は、さらにTa、Pb、Bi、In、Tl、As、
Zn、Ir、Fe、Ru、○s、Mn、Re、V、Ta
、Zr、Hf、Sc、Y。An information recording medium characterized by being provided with an auxiliary film whose main component is at least one element selected from the group consisting of S. (3) The auxiliary film further includes Ta, Pb, Bi, In, Tl, As,
Zn, Ir, Fe, Ru, ○s, Mn, Re, V, Ta
, Zr, Hf, Sc, Y.
Sb、 Si、 Ge、 Sn、 AN、 Cu
、 Ag、 Au、 Ni、Pd、Pt、Co、R
h、Cr、Mo、W、Nb、Ti及びランタン族元素か
らなる群から選ばれた少なくとも一種の他の元素を1か
ら10原子%の範囲含むことを特徴とする上記1又は2
に記載の情報記録媒体、(4)上記他の元素として少な
くともTeを有することを特徴とする上記3に記載の情
報記録媒体、(5)基板上に、記録用エネルギービーム
の照射を受けて凹部又は孔部が形成される記録膜を少な
くとも有する情報記録媒体において、該記録膜の少なく
とも一方の面に隣接して、Pb、Bi、In、Tl、A
s、Zn、Ir、Fe、Ru、Os。Sb, Si, Ge, Sn, AN, Cu
, Ag, Au, Ni, Pd, Pt, Co, R
1 or 2 above, characterized in that it contains at least one other element selected from the group consisting of h, Cr, Mo, W, Nb, Ti, and lanthanum group elements in a range of 1 to 10 atomic %.
(4) The information recording medium as described in (5) above, characterized in that it contains at least Te as the other element; (5) recesses formed on the substrate by being irradiated with a recording energy beam Alternatively, in an information recording medium having at least a recording film in which holes are formed, adjacent to at least one surface of the recording film, Pb, Bi, In, Tl, A
s, Zn, Ir, Fe, Ru, Os.
Mn、Re、V、Ta、Zr、Hf、Sc、Y及びラン
タン族元素からなる群から選ばれた少なくとも−種の元
素を主成分とする補助膜を設けたことを特徴とする情報
記録媒体、(6)上記補助膜は、少なくともPb又はB
iを有することを特徴とする上記5に記載の情報記録媒
体、(7)上記補助膜は、さらにTe、Se及びSから
なる群から選ばれた少なくとも一種の他の元素を1から
10原子%の範囲含むことを特徴とする上記5又は6に
記載の情報記録媒体、(8)上記他の元素として少なく
ともTeを有することを特徴とする上記7に記載の情報
記録媒体、(9)上記補助膜は、上記記録膜の基板側の
面に隣接して設けたことを特徴とする上記1から8まで
のいずれかに記載の情報記録媒体によって達成される。An information recording medium comprising an auxiliary film containing at least one element selected from the group consisting of Mn, Re, V, Ta, Zr, Hf, Sc, Y, and lanthanum group elements. (6) The auxiliary film is at least Pb or B.
(7) The auxiliary film further contains 1 to 10 atomic % of at least one other element selected from the group consisting of Te, Se, and S. (8) the information recording medium as described in item 7 above, characterized in that it has at least Te as the other element; (9) the auxiliary material. This is achieved by the information recording medium according to any one of 1 to 8 above, characterized in that the film is provided adjacent to the surface of the recording film on the substrate side.
上記(1)項及び(5)項記載の補助膜は、それぞれ記
載の元素のみからなるものであってもよく、また他の元
素を1〜10%(fM子%以下同じ)程度含むものであ
ってもよい。The auxiliary film described in items (1) and (5) above may be composed only of the elements described respectively, or may contain about 1 to 10% of other elements (same below fM%). There may be.
補助膜がSe、Sを主成分とするとき、Te、Pb、B
i等上記(3)項記載の他の元素を加えることが好まし
い。このような他の元素を加えることにより、膜の安定
性が増加し、寿命が長くなる。When the auxiliary film mainly contains Se and S, Te, Pb, and B
It is preferable to add other elements described in item (3) above, such as i. Addition of such other elements increases the stability of the film and increases its lifetime.
特に他の元素としてTeを含むことが好ましい。In particular, it is preferable to include Te as another element.
Se、S、Teは共にカルコゲナイド元素であり、全率
固溶体を形成する。Tsを含むことにより。Se, S, and Te are all chalcogenide elements and form a complete solid solution. By including Ts.
溶融状態の粘性が大きくなるため、形成した孔のリム内
径が小さくなる。Since the viscosity of the molten state increases, the inner diameter of the rim of the formed hole decreases.
また、補助膜がPb、Bi等上記(5)項に記載の元素
を主成分とするとき、Te、 Se等上記(7)項記載
の他の元素を加えることが好ましい。このような他の元
素を加えることにより、膜の耐酸化性が向上し、寿命が
長くなる。特に他の元素としてSeを含むことが好まし
い。(5)項に記載の補助膜の成分としては、PbとB
iが好ましい。Further, when the auxiliary film has as a main component the elements described in the above item (5) such as Pb and Bi, it is preferable to add other elements described in the above item (7) such as Te and Se. Addition of these other elements improves the oxidation resistance of the film and increases its lifetime. In particular, it is preferable to include Se as another element. The components of the auxiliary film described in (5) include Pb and B.
i is preferred.
Pbが記録膜に溶は込むと記録膜の溶融状態の粘性が増
加し、光照射部の温度分布が急峻になるため、形成した
孔のリム内径が小さくなる。Biは記録膜の中に拡散し
やすく、溶融状態の粘性は増加し、形成した孔のリム内
径が小さくなる。When Pb melts into the recording film, the viscosity of the molten recording film increases, and the temperature distribution at the light irradiation part becomes steeper, so that the inner diameter of the rim of the formed hole becomes smaller. Bi easily diffuses into the recording film, increasing the viscosity of the molten state and reducing the inner diameter of the rim of the formed hole.
補助膜は記録膜の少なくとも一方の面に隣接して設けら
九でいればよいが、特に記録膜の基板側の面に設けられ
ていることが好ましい。逆の側に設けられている場合よ
り、記録時により大きなパワーマージンが得られやすい
。記録膜の両面に補助膜が設けられている場合、それぞ
れの記録膜の材質は、同じものでも異なるものでもよい
。The auxiliary film may be provided adjacent to at least one surface of the recording film, but it is particularly preferable that the auxiliary film be provided on the surface of the recording film on the substrate side. It is easier to obtain a larger power margin during recording than when it is provided on the opposite side. When auxiliary films are provided on both sides of the recording film, the materials of the respective recording films may be the same or different.
補助膜が上記(1)項に記載のSe等を主成分とするも
のであるとき、その厚みは、1〜200nmの範囲であ
ることが好ましく、2〜1100nの範囲であることが
より好ましく、4〜50nmの範囲であることが最もこ
のましく、この範囲でパワーマージンが大きくなる。When the auxiliary film is mainly composed of Se or the like as described in item (1) above, the thickness thereof is preferably in the range of 1 to 200 nm, more preferably in the range of 2 to 1100 nm, The most preferable range is 4 to 50 nm, and the power margin becomes large in this range.
また、補助膜が上記(5)項に記載のPb、Bi等を主
成分とするものであるとき、その厚みは。Further, when the auxiliary film is mainly composed of Pb, Bi, etc. as described in item (5) above, its thickness is as follows.
1〜50nggの範囲であることが好ましく、1〜20
nmの範囲であることがより好ましく、2〜15n曹の
範囲が最も好ましい。この範囲でパワーマージンが大き
くなる。It is preferably in the range of 1 to 50 ngg, and 1 to 20 ngg.
The range is more preferably 2 nm to 15 nm, and most preferably 2 to 15 nm. The power margin becomes large in this range.
本発明の記録媒体の記録膜としてはどのような材質のも
のでもよい。有機物からなる記録膜でもよいが、無機物
からなる記録膜の方が好ましい。The recording film of the recording medium of the present invention may be made of any material. Although a recording film made of an organic substance may be used, a recording film made of an inorganic substance is more preferable.
このような無機物としては、Te−8s系、Te−C系
、Pb−Te−3s系、Te−3b系等、さらに他のカ
ルコゲナイド系のものを用いることが好ましい。また、
前記特開昭57−38189.特開昭57−66996
、特開昭58−224446に記載の記録膜を用いるこ
とができる。As such inorganic materials, it is preferable to use other chalcogenide-based materials such as Te-8s-based, Te--C-based, Pb-Te-3s-based, and Te-3b-based. Also,
Said Japanese Unexamined Patent Publication No. 57-38189. Japanese Patent Publication No. 57-66996
, a recording film described in JP-A-58-224446 can be used.
なお1本発明の記録媒体は、ディスク状、テープ状、カ
ード状等どのような形態であってもよい。Note that the recording medium of the present invention may be in any form such as a disk, tape, or card.
本発明のii!録媒体と従来の記録媒体とが同じ材質、
同じ厚みの記録膜を有するとき、これらに同じパワーの
エネルギービームを照射して記録を行なうと、形成した
孔の周囲のリムの外径は両者はぼ同じであるが、本発明
の記録媒体の方がリム幅が大きく、リム内径が小さい。ii of the present invention! If the recording medium and the conventional recording medium are made of the same material,
When recording films with the same thickness are irradiated with an energy beam of the same power to perform recording, the outer diameter of the rim around the formed hole is almost the same, but the recording medium of the present invention The rim width is larger and the rim inner diameter is smaller.
エネルギービームのパワーを増加させて記録を行なうと
、形成した孔のリムは外径、内径共に拡がる。しかし、
リム内径が大きくなるにつれて、ピット間の信号レベル
は低下し、その信号レベルと孔の部分の信号レベルとの
差、すなわち、再生信号変調度は低下する。よって本発
明の記録媒体の方が従来の記録媒体よりも大きなパワー
のエネルギービームでの記録が可能であり、パワーマー
ジンが大である。When recording is performed by increasing the power of the energy beam, the rim of the formed hole expands in both its outer and inner diameters. but,
As the inner diameter of the rim increases, the signal level between the pits decreases, and the difference between the signal level and the signal level at the hole, that is, the degree of modulation of the reproduced signal decreases. Therefore, the recording medium of the present invention allows recording with an energy beam of higher power than conventional recording media, and has a larger power margin.
以下、本発明を実施例により詳細に説明する。 Hereinafter, the present invention will be explained in detail with reference to Examples.
実施例1
直径300+am、厚さ1.2mmのディスク状化学強
化ガラス板を基板として用いた。予め、N1スタンパ−
上に下地膜となるニトロセルロースの1.5%酢酸n−
ブチル溶液を回転塗布し、乾燥した。この上に紫外線硬
化樹脂を滴下し、上記基板を押し付け、フォトポリメリ
ゼーション法により、1.6μmピッチのトラッキング
用の案内溝(グループ)とアドレスを示すプリピットを
表面に形成した紫外線硬化樹脂層を形成したレプリカ基
板を作製した。Example 1 A disc-shaped chemically strengthened glass plate with a diameter of 300+ am and a thickness of 1.2 mm was used as a substrate. N1 stamper in advance
Nitrocellulose with 1.5% acetic acid n-
The butyl solution was spin coated and dried. Drop UV curable resin onto this, press the substrate, and use photopolymerization to form a UV curable resin layer with 1.6 μm pitch tracking guide grooves (groups) and pre-pits indicating addresses on the surface. A replica substrate was prepared using the above-described structure.
次に、上記レプリカ基板上に、補助膜であるSe層を1
0nmの厚さで、蒸着法により形成し、その上にP b
5 T e@ 6 S elsの組成の記録膜を30n
mの厚さで蒸着法で形成した。これをディスクAとする
。また、これと別に上記レプリカ基板上にP b、 T
e、、 S el、の組成の記録膜を30nm(7)厚
さで蒸着し、その上にSeの補助膜をlonmの厚さで
蒸着した。これをディスクBとする。Next, a layer of Se, which is an auxiliary film, is placed on the replica substrate.
It is formed with a thickness of 0 nm by a vapor deposition method, and P b
A recording film with a composition of 5 T e @ 6 S els was 30n
It was formed by a vapor deposition method to a thickness of m. This is called disk A. In addition, P b, T
A recording film having a composition of e,, S el, was deposited to a thickness of 30 nm (7), and an auxiliary film of Se was deposited thereon to a thickness of lonm. This will be called disk B.
一方、比較のため、上記レプリカ基板上に補助膜を設け
ることなくPb、Te、。S el5の記録膜のみを3
On+mの厚さで形成して従来の記録媒体を作製した。On the other hand, for comparison, Pb, Te, without providing an auxiliary film on the replica substrate. Only the recording film of S el5 is 3
A conventional recording medium was manufactured by forming the film with a thickness of On+m.
これをディスクCとする。This is called disk C.
第1図(a)(b)(c)は、それぞれ上記本発明のデ
ィスクA、本発明のディスクB、従来のディスクCの断
面模式図である。第1図(a)に示すように、ディスク
Aは基板1上に、紫外線硬化樹脂層2.下地膜3.補助
膜5、記録膜4が積層されている。また、ディスクBは
、第1図(b)に示すように、補助膜5が記録膜4の基
板と逆の側に配置されている。ディスクCは、第1図(
c)に示すように補助膜を有しない。FIGS. 1(a), 1(b), and 1(c) are schematic cross-sectional views of the disk A of the present invention, the disk B of the present invention, and the conventional disk C, respectively. As shown in FIG. 1(a), a disk A has a substrate 1 and an ultraviolet curing resin layer 2. Base film 3. An auxiliary film 5 and a recording film 4 are laminated. Further, in the disk B, as shown in FIG. 1(b), the auxiliary film 5 is arranged on the side of the recording film 4 opposite to the substrate. Disk C is shown in Figure 1 (
As shown in c), it does not have an auxiliary membrane.
上記のディスクA、B、Cの記録、再生特性の測定を次
のようにして行なった。各ディスクを900rptmで
回転させ、波1%830n麿の半導体レーザ光を開口数
(NA)0.55のレンズで集光して、トラッキング用
の案内溝と案内溝の間に記録を行なった。読出し光は、
記録膜に変形を起こさないように、1mWの連続光とし
た。記録は半径140a+mの位置に行ない、記録密度
を高くして、記録ビット間隔が1.5μ田となるように
8.6MHzの信号を記録した。記録パルス幅は45n
sとした。ディスクA、B、Cについて、記録パワーを
変えて記録した時の再生信号変調度((記録点の再生信
号振幅強度)/プリピットの再生信号振幅強度))の様
子を第2図に示す。スライスレベルを0.4とした時、
再生信号変調度が0.4以上となる記録光のパワーマー
ジンはディスクAでは7.9〜13mWの範囲で5.1
a+W、ディスクBでは7.8〜11.5■Wの範囲で
3 、7 mW、ディスクCでは7.7〜10o+Wの
範囲で2.3mWである。The recording and reproducing characteristics of the above discs A, B, and C were measured as follows. Each disk was rotated at 900 rpm, and semiconductor laser light with a wave length of 1% and 830 nm was focused by a lens with a numerical aperture (NA) of 0.55 to record between the tracking guide grooves. The readout light is
The continuous light was 1 mW so as not to cause deformation of the recording film. Recording was performed at a position with a radius of 140 a+m, the recording density was increased, and a signal of 8.6 MHz was recorded so that the recording bit interval was 1.5 μm. Recording pulse width is 45n
It was set as s. FIG. 2 shows the degree of reproduction signal modulation ((reproduction signal amplitude strength at a recording point)/reproduction signal amplitude strength at a pre-pit) when recording was performed with different recording powers for disks A, B, and C. When the slice level is set to 0.4,
The power margin of the recording light for which the reproduction signal modulation degree is 0.4 or more is 5.1 in the range of 7.9 to 13 mW for disk A.
a+W, disk B has a power of 3.7 mW in the range of 7.8 to 11.5 ■W, and disk C has a power of 2.3 mW in a range of 7.7 to 10o+W.
従って本発明のディスクA、Bでは従来のディスクCに
比べてパワーマージンが大幅に広がった。Therefore, in the disks A and B of the present invention, the power margin is significantly expanded compared to the conventional disk C.
また、記録したときに形成された孔の断面模式図を第3
図に示す、またリム6の内径8.外径7の測定値を第4
図に示す。リム外径7は、ディスクA、B、C共同し記
録パワー依存性を示すが。In addition, a schematic cross-sectional diagram of the hole formed when recording is shown in the third figure.
Also shown in the figure is the inner diameter 8 of the rim 6. The measured value of outer diameter 7 is
As shown in the figure. The rim outer diameter 7 of disks A, B, and C all exhibits recording power dependence.
内径8は、ディスクAが一番小さく、ディスクB。Disk A has the smallest inner diameter 8, and disk B has the smallest inner diameter.
Cの順に大きくなる。C increases in order.
なお、ディスクA、Bは、S/N比もクロストークも良
好であった。Note that disks A and B had good S/N ratios and good crosstalk.
ディスクAにおいて、補助膜の膜厚を変えた時の再生信
号変調度のパワーマージンの膜厚依存性を第5図に示す
0図にみられるように、大なるパワーマージンを得るた
めに、膜厚は1〜200nmの範囲が好ましく、2〜1
00r+II+の範囲がより好ましく、4〜50nmの
範囲が最も好ましい。In disk A, as shown in Figure 5, which shows the film thickness dependence of the power margin of the reproduction signal modulation degree when the film thickness of the auxiliary film is changed, in order to obtain a large power margin, The thickness is preferably in the range of 1 to 200 nm, preferably 2 to 1
The range of 00r+II+ is more preferable, and the range of 4 to 50 nm is most preferable.
また、Seに代えて、Sey、ssn、zよりなる補助
膜(膜厚Long)を用いたディスクAの構造の記録媒
体のパワーマージンは5.0mWであった。Further, the power margin of the recording medium having the structure of disk A using an auxiliary film (long film thickness) made of Sey, ssn, and z instead of Se was 5.0 mW.
実施例2
補助膜にTeを1〜10%(全補助膜中の比率、以下同
じ)加えた5e−Te系の材料を用いてディスクAの構
造の記録媒体を実施例1と同様に作製して、記録、再生
特性を測定したところ、パワーマージンはSeのみの補
助膜を用いた実施例1のディスクAの記録媒体のそれと
ほとんど同じであった。Example 2 A recording medium having the structure of disk A was produced in the same manner as in Example 1 using a 5e-Te-based material in which Te was added to the auxiliary film by 1 to 10% (ratio in the total auxiliary film, the same hereinafter). When the recording and reproducing characteristics were measured, the power margin was almost the same as that of the recording medium of Disk A of Example 1, which used an auxiliary film made only of Se.
一方、80℃、相対湿度90%における寿命は、実施例
1の記録媒体に比較してTeを1%加えたものが約2倍
、Teを3〜10%加えたものが約4倍長くなった。T
eを加えることにより膜の安定性が増加したことが分か
る。On the other hand, compared to the recording medium of Example 1, the lifespan at 80°C and 90% relative humidity is about twice as long for the recording medium with 1% Te added, and about 4 times longer for the one with 3 to 10% Te added. Ta. T
It can be seen that the stability of the membrane was increased by adding e.
実施例3 実施例2におけるTeの代わりに、Pb、 Bi。Example 3 In place of Te in Example 2, Pb and Bi.
In、 TQ 、 As、 Zn、 Ir、 Fe
、 Ru、 Os、 Mn。In, TQ, As, Zn, Ir, Fe
, Ru, Os, Mn.
Ra、V、Ta、Zr、Hf、Sc、Y、Sb、Si、
Ge、Sn、Al、Cu、Ag、Au、Ni、Pd、P
t、Co、Rh、Cr、Mo、W、Nb、Ti及びラン
タン族元素の各元素を5%加えた記録媒体をそれぞれ作
製し、記録、再生特性を検討した。パワーマージンは、
いずれも実施例1のディスクAの記録媒体のそれとほと
んど同じであった。一方、実施例2と同じ寿命試験の結
果は、実施例1の記録媒体より約4倍長かった。Ra, V, Ta, Zr, Hf, Sc, Y, Sb, Si,
Ge, Sn, Al, Cu, Ag, Au, Ni, Pd, P
Recording media to which 5% of each element of t, Co, Rh, Cr, Mo, W, Nb, Ti, and lanthanum group elements were added were prepared, and their recording and reproducing characteristics were examined. The power margin is
Both were almost the same as those of the recording medium of Disk A of Example 1. On the other hand, the result of the same life test as in Example 2 was that it was about 4 times longer than the recording medium in Example 1.
実施例4
補助膜に、Pb及びBiを用いたディスクAの構造の記
録媒体を実施例1と同様にしてそれぞれ作製し、同様の
条件で記録特性を測定した。補助膜にPbを用いた場合
のパワーマージンの膜厚依存性を第6図に、同じ<Bi
の場合のそれを第7図に示す、いずれも実施例1におい
て示した従来の記録媒体よりパワーマージンが大きい。Example 4 Recording media having the structure of disk A using Pb and Bi as the auxiliary film were prepared in the same manner as in Example 1, and the recording characteristics were measured under the same conditions. Figure 6 shows the film thickness dependence of the power margin when Pb is used as the auxiliary film.
FIG. 7 shows the cases in which the power margin is larger than that of the conventional recording medium shown in the first embodiment.
また、Pb、Biの他に、第1表記載の元素を用いて同
様に記録媒体を作製し、その記録特性を測定した。その
膜厚及びパワーマージンを第1表に記載する。いずれも
大きなパワーマージンが得られた。なお、これらの記載
媒体のS/N比、クロストークも良好であった。In addition to Pb and Bi, recording media were prepared in the same manner using the elements listed in Table 1, and the recording characteristics thereof were measured. The film thickness and power margin are listed in Table 1. In both cases, a large power margin was obtained. Note that the S/N ratio and crosstalk of these recording media were also good.
以下余白
第
表
実施例5
補助膜としてPb又はBiとSe、S、Tsのカルコゲ
ン元素をそれぞれ1〜10%加えた材料を用いてディス
クAの構造の記録媒体を作製し、記録特性を検討した。The following is a margin table. Example 5 A recording medium having the structure of disk A was prepared using a material containing 1 to 10% of Pb or Bi and chalcogen elements of Se, S, and Ts as an auxiliary film, and the recording characteristics were examined. .
パワーマージンは、実施例4のPb又はBiのみの補助
膜を用いた記録媒体とほぼ同じであった。実施例2と同
じ寿命試験の結果は、Pb又はBiのみの補助膜の記録
媒体に対して、上記カルコゲン元素を1%含む補助膜の
記録媒体は約2倍長く、3〜10%含む補助膜の記録媒
体は約3倍長かった。The power margin was almost the same as that of the recording medium using the auxiliary film of only Pb or Bi in Example 4. The results of the same life test as in Example 2 showed that the recording medium with the auxiliary film containing 1% of the chalcogen element was about twice as long as the recording medium with the auxiliary film containing only Pb or Bi; The recording medium was about three times longer.
また、第1表記載の各元素にSe又はTeそれぞれ5%
加えた補助膜を用いた記録媒体を作製したところ、これ
らの記録媒体は、各元素のみの補助膜を用いた記録媒体
と比較してパワーマージンはほぼ同じであり、寿命は約
3倍長かった。In addition, 5% each of Se or Te is added to each element listed in Table 1.
When we fabricated recording media using auxiliary films containing these elements, these recording media had almost the same power margin and had a lifespan approximately three times longer than those using auxiliary films containing only each element. .
また、上記実施例において下地膜としてニトロセルロー
スを用いたが、他にアセチルセルロース、フタロシアニ
ン系色素、グアニン、フッ素樹脂、ポリアミド、ポリイ
ミド等を用いても同様な結果が得られた。Further, although nitrocellulose was used as the base film in the above examples, similar results were obtained using other materials such as acetyl cellulose, phthalocyanine dyes, guanine, fluororesins, polyamides, and polyimides.
記録膜として、上記Pb−Te−5e系記録膜の他に、
Te−C系、Te−3b系等のカルコゲナイド系の記録
膜を用いても同様な結果が得られた。In addition to the above-mentioned Pb-Te-5e-based recording film, as a recording film,
Similar results were obtained using chalcogenide recording films such as Te-C and Te-3b.
以上説明したように、本発明の情報記録媒体は。 As explained above, the information recording medium of the present invention is.
補助膜を記録膜の少なくとも一方の面に隣接して設けた
ため、形成された孔のリム内径が小さく、高密度記録を
行なっても大なるパワーマージンが得られる。Since the auxiliary film is provided adjacent to at least one surface of the recording film, the inner diameter of the rim of the formed hole is small, and a large power margin can be obtained even when performing high-density recording.
第1図は本発明の情報記録媒体の構造を示す断面模式図
、第2図は本発明の実施例における再生信号変調度の記
録パワー依存性を示す図、第3図は記録によって形成さ
れた孔の断面模式図、第4図は記録によって形成された
孔のリム外径、内径と記録パワーとの関係を示す図、第
5図はパワーマージンの補助膜の膜厚依存性を示す図、
第6図はパワーマージンのPb補助暦の膜厚依存性を示
す図、第7図はパワーマージンのBi補助膜の膜厚依存
性を示す図である。FIG. 1 is a schematic cross-sectional diagram showing the structure of the information recording medium of the present invention, FIG. 2 is a diagram showing the recording power dependence of the degree of modulation of the reproduced signal in an embodiment of the present invention, and FIG. A schematic cross-sectional view of a hole, FIG. 4 is a diagram showing the relationship between the rim outer diameter and inner diameter of the hole formed by recording, and recording power, and FIG. 5 is a diagram showing the dependence of the power margin on the thickness of the auxiliary film.
FIG. 6 is a diagram showing the dependence of the power margin on the thickness of the Pb auxiliary film, and FIG. 7 is a diagram showing the dependence of the power margin on the thickness of the Bi auxiliary film.
Claims (1)
は孔部が形成される記録膜を少なくとも有する情報記録
媒体において、該記録膜の少なくとも一方の面に隣接し
て、Se、Sからなる群から選ばれた少なくとも一種の
元素を主成分とする補助膜を設けたことを特徴とする情
報記録媒体。 2、上記補助膜は、少なくともSeを有することを特徴
とする請求項1に記載の情報記録媒体。 3、上記補助膜は、さらにTe、Pb、Bi、In、T
l、As、Zn、Ir、Fe、Ru、Os、Mn、Re
、V、Ta、Zr、Hf、Sc、Y、Sb、Si、Ge
、Sn、Al、Cu、Ag、Au、Ni、Pd、Pt、
Co、Rh、Cr、Mo、W、Nb、Ti及びランタン
族元素からなる群から選ばれた少なくとも一種の他の元
素を1から10原子%の範囲含むことを特徴とする請求
項1又は2に記載の情報記録媒体。 4、上記他の元素として少なくともTeを有することを
特徴とする請求項3に記載の情報記録媒体。 5、基板上に、記録用エネルギービームの照射を受けて
凹部又は孔部が形成される記録膜を少なくとも有する情
報記録媒体において、該記録膜の少なくとも一方の面に
隣接して、Pb、Bi、In、Tl、As、Zn、Ir
、Fe、Ru、Os、Mn、Re、V、Ta、Zr、H
f、Sc、Y及びランタン族元素からなる群から選ばれ
た少なくとも一種の元素を主成分とする補助膜を設けた
ことを特徴とする情報記録媒体。 6、上記補助膜は、少なくともPb又はBiを有するこ
とを特徴とする請求項5に記載の情報記録媒体。 7、上記補助膜は、さらにTe、Se及びSからなる群
から選ばれた少なくとも一種の他の元素を1から10原
子%の範囲含むことを特徴とする請求項5又は6に記載
の情報記録媒体。 8、上記他の元素として少なくともTeを有することを
特徴とする請求項7に記載の情報記録媒体。 9、上記補助膜は、上記記録膜の基板側の面に隣接して
設けたことを特徴とする請求項1から8までのいずれか
に記載の情報記録媒体。[Claims] 1. In an information recording medium having at least a recording film on a substrate in which a recess or a hole is formed by irradiation with an energy beam, adjacent to at least one surface of the recording film, An information recording medium comprising an auxiliary film containing at least one element selected from the group consisting of Se and S as a main component. 2. The information recording medium according to claim 1, wherein the auxiliary film contains at least Se. 3. The auxiliary film further includes Te, Pb, Bi, In, and T.
l, As, Zn, Ir, Fe, Ru, Os, Mn, Re
, V, Ta, Zr, Hf, Sc, Y, Sb, Si, Ge
, Sn, Al, Cu, Ag, Au, Ni, Pd, Pt,
Claim 1 or 2, characterized in that it contains at least one other element selected from the group consisting of Co, Rh, Cr, Mo, W, Nb, Ti and lanthanum group elements in a range of 1 to 10 atomic %. Information recording medium described. 4. The information recording medium according to claim 3, further comprising at least Te as the other element. 5. In an information recording medium having at least a recording film on a substrate in which recesses or holes are formed by being irradiated with a recording energy beam, adjacent to at least one surface of the recording film, Pb, Bi, In, Tl, As, Zn, Ir
, Fe, Ru, Os, Mn, Re, V, Ta, Zr, H
An information recording medium comprising an auxiliary film containing at least one element selected from the group consisting of f, Sc, Y, and lanthanum group elements as a main component. 6. The information recording medium according to claim 5, wherein the auxiliary film contains at least Pb or Bi. 7. The information recording device according to claim 5 or 6, wherein the auxiliary film further contains at least one other element selected from the group consisting of Te, Se, and S in a range of 1 to 10 atomic %. Medium. 8. The information recording medium according to claim 7, further comprising at least Te as the other element. 9. The information recording medium according to claim 1, wherein the auxiliary film is provided adjacent to the substrate side surface of the recording film.
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1303257A JPH03165340A (en) | 1989-11-24 | 1989-11-24 | Information recording medium |
US07/615,914 US5273860A (en) | 1989-11-24 | 1993-11-20 | Information recording medium |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1303257A JPH03165340A (en) | 1989-11-24 | 1989-11-24 | Information recording medium |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH03165340A true JPH03165340A (en) | 1991-07-17 |
Family
ID=17918776
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP1303257A Pending JPH03165340A (en) | 1989-11-24 | 1989-11-24 | Information recording medium |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH03165340A (en) |
-
1989
- 1989-11-24 JP JP1303257A patent/JPH03165340A/en active Pending
Similar Documents
Publication | Publication Date | Title |
---|---|---|
AU2002219540B2 (en) | Optical recording medium | |
KR100563882B1 (en) | Optical disc | |
JP2002133712A (en) | Optical information recording medium, its manufacturing method, recording/reproducing method and recording/ reproducing device | |
US7573803B2 (en) | Optical recording disc | |
JPH06187662A (en) | Optical recording medium | |
US5273860A (en) | Information recording medium | |
US20060126482A1 (en) | Optical recording disc | |
DE602004005007T2 (en) | OPTICAL RECORDING MEDIUM AND METHOD FOR THE PRODUCTION THEREOF | |
JPH03165340A (en) | Information recording medium | |
US20020057646A1 (en) | Optical information recording medium and method of manufacturing the same | |
KR20060052819A (en) | Optical information recording medium and manufacturing method thereof | |
JPH02235789A (en) | Optical data recording member and recording regeneration part thereof | |
KR20010082094A (en) | Optical recording medium | |
JP2512044B2 (en) | Optical recording medium and optical recording method | |
JP2948899B2 (en) | Optical recording medium and optical recording method | |
JPH10172181A (en) | Optical recording medium | |
JPH05262040A (en) | Optical data recording medium | |
JP2512043B2 (en) | Optical recording medium and optical recording method | |
JPH02217289A (en) | Optical recording medium | |
JPH02247839A (en) | Optical recording medium | |
JPH10315622A (en) | Optical recording medium | |
JPH03235231A (en) | Information recording medium | |
JPH0441293A (en) | Medium for recording optical information | |
JPH10199039A (en) | Optical disk | |
JPH02178086A (en) | Optical recording medium |