JPH03233826A - Field emission type ion source - Google Patents
Field emission type ion sourceInfo
- Publication number
- JPH03233826A JPH03233826A JP1275950A JP27595089A JPH03233826A JP H03233826 A JPH03233826 A JP H03233826A JP 1275950 A JP1275950 A JP 1275950A JP 27595089 A JP27595089 A JP 27595089A JP H03233826 A JPH03233826 A JP H03233826A
- Authority
- JP
- Japan
- Prior art keywords
- boride
- ion source
- titanium
- needle
- chromium
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000463 material Substances 0.000 claims abstract description 28
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims abstract description 21
- 229910052804 chromium Inorganic materials 0.000 claims abstract description 20
- 239000011651 chromium Substances 0.000 claims abstract description 20
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims abstract description 19
- 239000010936 titanium Substances 0.000 claims abstract description 19
- 229910052719 titanium Inorganic materials 0.000 claims abstract description 19
- 150000002500 ions Chemical class 0.000 claims description 26
- 229910045601 alloy Inorganic materials 0.000 claims description 24
- 239000000956 alloy Substances 0.000 claims description 24
- 229910052751 metal Inorganic materials 0.000 claims description 12
- 239000002184 metal Substances 0.000 claims description 12
- 230000005684 electric field Effects 0.000 claims description 4
- 229910021645 metal ion Inorganic materials 0.000 claims description 4
- 239000007788 liquid Substances 0.000 claims description 3
- 239000000203 mixture Substances 0.000 abstract description 6
- 150000004767 nitrides Chemical class 0.000 abstract description 4
- 229910052582 BN Inorganic materials 0.000 abstract description 3
- 238000010884 ion-beam technique Methods 0.000 description 12
- 229910052782 aluminium Inorganic materials 0.000 description 8
- WPPDFTBPZNZZRP-UHFFFAOYSA-N aluminum copper Chemical compound [Al].[Cu] WPPDFTBPZNZZRP-UHFFFAOYSA-N 0.000 description 8
- 229910000881 Cu alloy Inorganic materials 0.000 description 7
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 7
- 238000000605 extraction Methods 0.000 description 7
- 238000010438 heat treatment Methods 0.000 description 7
- 238000005192 partition Methods 0.000 description 5
- 239000000126 substance Substances 0.000 description 5
- 150000002739 metals Chemical class 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 3
- 229910052785 arsenic Inorganic materials 0.000 description 3
- 229910052796 boron Inorganic materials 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 238000005498 polishing Methods 0.000 description 3
- 229910000838 Al alloy Inorganic materials 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 150000001247 metal acetylides Chemical class 0.000 description 2
- 230000005012 migration Effects 0.000 description 2
- 238000013508 migration Methods 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 239000011232 storage material Substances 0.000 description 2
- 229910052718 tin Inorganic materials 0.000 description 2
- 239000011135 tin Substances 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- QYEXBYZXHDUPRC-UHFFFAOYSA-N B#[Ti]#B Chemical compound B#[Ti]#B QYEXBYZXHDUPRC-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- JPVYNHNXODAKFH-UHFFFAOYSA-N Cu2+ Chemical compound [Cu+2] JPVYNHNXODAKFH-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- -1 aluminum ions Chemical class 0.000 description 1
- IEQUNHXCJVILJQ-UHFFFAOYSA-N aluminum palladium Chemical compound [Al].[Pd] IEQUNHXCJVILJQ-UHFFFAOYSA-N 0.000 description 1
- LGLOITKZTDVGOE-UHFFFAOYSA-N boranylidynemolybdenum Chemical compound [Mo]#B LGLOITKZTDVGOE-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 229910001431 copper ion Inorganic materials 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 229910052702 rhenium Inorganic materials 0.000 description 1
- WUAPFZMCVAUBPE-UHFFFAOYSA-N rhenium atom Chemical compound [Re] WUAPFZMCVAUBPE-UHFFFAOYSA-N 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- UONOETXJSWQNOL-UHFFFAOYSA-N tungsten carbide Chemical compound [W+]#[C-] UONOETXJSWQNOL-UHFFFAOYSA-N 0.000 description 1
- 238000009736 wetting Methods 0.000 description 1
Landscapes
- Electron Sources, Ion Sources (AREA)
Abstract
Description
【発明の詳細な説明】
（産業上の利用分野）
本発明は金属又は合金を加熱して溶融し、高電界を印加
して金属イオンを放出させる、特にイオンビーム露光装
置、イオン注入装置などに用いられる電界放出型イオン
源に関する。Detailed Description of the Invention (Industrial Application Field) The present invention is applicable to metals or alloys that are heated and melted, and a high electric field is applied to release metal ions, particularly ion beam exposure equipment, ion implantation equipment, etc. This invention relates to a field emission type ion source used.
（従来の技術）
電界放出型イオン源はイオンビームの輝度が高いため、
微細集束イオンビーム装置を用いたマスクレスイオン注
入、イオンビーム露光装置Ｆなどに応用されている。電
界放出型イオン源はイオン化させる物質を液状で支持し
、電界の作用で該物質のイオンを放出せるために針状電
極と該物質を貯蔵するための貯蔵部から構成されている
。(Conventional technology) Because the field emission ion source has a high ion beam brightness,
It is applied to maskless ion implantation using a finely focused ion beam device, ion beam exposure device F, etc. A field emission type ion source supports a substance to be ionized in a liquid state, and is composed of a needle-like electrode and a storage part for storing the substance in order to emit ions of the substance by the action of an electric field.
従来からイオン化させる物質はアルミニウム、ヒ素、ホ
ウ素、炭素、ゲルマニウム、インジウム、リン、ケイ素
、スズなど多くの元素が知られており、これらの元素は
主として金属又は合金にして用いられ、針状電極の材料
はタングステン、レニウムなどの金属単体、及びタング
ステンカーバイド、ホウ化チタン、ホウ化クロムなどが
知られている。アルミニウム、ホウ素、リン又はそれら
を含む合金などの様に反応性が大きい物質の場合はイオ
ン源構造体の材質が問題である。例えば、アルミニウム
単体の場合、針状電極の材料としてＴｉＢ、やＢＮ
ＴｔＢｚコンポジットが適することが知られている。〔
レボリュージョン・サイエンス・インストラム（Ｒｅｖ
、 Ｓｃｉ、 Ｉｎ５ｔｒｕ＋ｗ、） ５７巻、第７
号、７月Ｉ２８２頁〜Ｉ２８５頁（１９８６））しかし
ながら、近年、特にＩＣのアルミニウム配線のマイグレ
ーションを防止するという新しい要望が強く、アルミニ
ウムイオンと同時に銅イオンを同時に注入することが重
要となっている。アルミニウムー銅合金を貯蔵し、針状
電極から放出する場合、従来から知られているＴｉＪ、
ＢＮ Ｔｉ８２などを針状電極及び貯蔵部材料とし
て用いると、合金と針状電極との濡れ性が悪いため、合
金の融点よりもかなり高い温度で動作する必要がでてく
る。そのため、合金の蒸発が激しく、隔壁（第１図４Ａ
、４Ｂ）、ヒーター（５Ａ、５Ｂ）に合金蒸気が凝縮し
、ヒーターの導電性があがり、ヒーターとしての機能が
なくなり、長時間の安定作業ができなかった。Conventionally, many elements have been known to be ionized, such as aluminum, arsenic, boron, carbon, germanium, indium, phosphorus, silicon, and tin. Known materials include simple metals such as tungsten and rhenium, tungsten carbide, titanium boride, and chromium boride. In the case of highly reactive substances such as aluminum, boron, phosphorus, or alloys containing these, the material of the ion source structure is a problem. For example, in the case of aluminum alone, TiB or BN can be used as the material for the needle electrode.
TtBz composites are known to be suitable. [
Revolution Science Instrument (Rev
, Sci, In5tru+w,) Volume 57, No. 7
(No., July, pp. I282-I285 (1986)) However, in recent years, there has been a strong new desire to prevent migration of aluminum wiring in ICs, and it has become important to implant copper ions at the same time as aluminum ions. . When storing an aluminum-copper alloy and releasing it from a needle electrode, the conventionally known TiJ,
When BN Ti82 or the like is used as the needle electrode and reservoir material, it is necessary to operate at a temperature significantly higher than the melting point of the alloy due to poor wetting of the alloy with the needle electrode. Therefore, the alloy evaporates violently, causing the partition wall (Fig. 1 4A
, 4B), Alloy vapor condensed on the heaters (5A, 5B), the conductivity of the heaters increased, and the function as a heater was lost, making it impossible to work stably for a long time.
（発明が解決しようとする課Ｂ）
従来技術では金属又は合金の蒸発が激しく、長時間安定
した金属イオンを出す電界放出型イオン源を得ることが
できなかった。(Problem B to be Solved by the Invention) In the prior art, metals or alloys evaporate violently, making it impossible to obtain a field emission type ion source that emits metal ions stably for a long period of time.
本発明の目的は安定なイオンビームを再現よく得ること
ができ実用的な寿命を有するアルミニウムー銅合金の電
界放出型イオン源を提供することである。An object of the present invention is to provide an aluminum-copper alloy field emission type ion source that can obtain a stable ion beam with good reproducibility and has a practical lifetime.
本発明者らはこの目的を達成するために、針状電極と金
属又は合金を貯蔵する貯蔵部の材料について、鋭意検討
した結果、針状電極としてチタンの硼化物を主成分とす
る材料を使用し、貯蔵部材料としてクロムの硼化物を主
成分とする材料を使用することにより、微量のクロム硼
化物が金属又は合金中に微量溶出し、比較的低温でも針
状電極によく濡れるようになるため、動作温度を従来よ
り下げることができることがわかった。そのため金属又
は合金の蒸発によるヒーターの損傷がなくなり、安定し
た長寿命の電界放出型イオン源が得られることを見出し
、本発明を完成するに至った（課題を解決するための手
段）
すなわち、本発明は以下を要旨とするものである。In order to achieve this objective, the present inventors conducted extensive studies on the material of the needle-shaped electrode and the storage part that stores the metal or alloy, and as a result, a material containing titanium boride as the main component was used as the needle-shaped electrode. However, by using a material whose main component is chromium boride as the storage material, a small amount of chromium boride will be eluted into the metal or alloy, making it possible to wet the needle electrode well even at relatively low temperatures. Therefore, it was found that the operating temperature can be lowered than before. Therefore, it was discovered that damage to the heater due to evaporation of the metal or alloy can be eliminated, and a stable and long-life field emission type ion source can be obtained, leading to the completion of the present invention (means for solving the problem). The gist of the invention is as follows.
金属又は合金を液体で支持する針状電極と該合金を貯蔵
する貯蔵部とを有し、電界の作用で前記針状電極の先端
から、金属イオンを放出させ電界放出型イオン源におい
て、前記針状電極がチタンの硼化物を主成分とする材料
であり、前記貯蔵部がクロムの硼化物を主成分とする材
料であることを特徴とする電界放出型イオン源。In a field emission type ion source, the needle has a needle-shaped electrode that supports a metal or an alloy in liquid and a storage part that stores the alloy, and in which metal ions are emitted from the tip of the needle-shaped electrode by the action of an electric field. 1. A field emission type ion source, wherein the shaped electrode is made of a material containing boride of titanium as a main component, and the storage portion is made of a material containing boride of chromium as a main component.
以下、さらに本発明について詳しく説明する。The present invention will be further explained in detail below.
本願発明において、イオン源構造体は第１図に示すよう
に、少くとも先端が針状であり、イオンビームを放出す
るための電極ｌと長時間使用するため、合金をためてお
く、貯蔵部２とこれらを加熱するための発熱体５Ａ、５
Ｂと、貯蔵部の表面に濡れ広がった合金の発熱体５Ａ、
５Ｂにまで浸透することを防止する働きをする隔壁４Ａ
、４Ｂ等から構成されている。In the present invention, as shown in FIG. 1, the ion source structure has at least a needle-like tip, and has an electrode l for emitting an ion beam and a storage part for storing the alloy for long-term use. 2 and heating elements 5A and 5 for heating these.
B, an alloy heating element 5A spread wet on the surface of the storage part,
Partition wall 4A that functions to prevent penetration into 5B
, 4B, etc.
針状電極ｌの先端から少し離れたところに中心に穴のあ
る引出し電極７を設け、この引出し電極は接地する。引
出し電極の穴を針状電極の先端から放出されるイオンビ
ーム８が通過する。イオン源には高圧電源９によりプラ
スの電圧が印加される。高圧電源のマイナス例は電流計
１０を経て接地する。A lead-out electrode 7 having a hole in the center is provided a little distance from the tip of the needle-shaped electrode 1, and this lead-out electrode is grounded. The ion beam 8 emitted from the tip of the needle electrode passes through the hole in the extraction electrode. A positive voltage is applied to the ion source by a high voltage power supply 9. A negative example of the high voltage power supply is grounded through the ammeter 10.
本発明において、針状電極とは少くとも先端が針状であ
る電極を云う。又チタンの硼化物を主成分とする材料と
はホウ化チタン（ＴｉｚＢ、 ＴｉＢ、ＴｉＢｚ、Ｔｉ
、Ｂ、など）及びホウ化チタンと他のホウ化物、窒化物
、カーバイトなどの混合体たとえばホウ化チタン−窒化
ホウ素、ホウ化チタン−窒化アルミ、ホウ化チタン−タ
ングステンカーバイド、ホウ化チタン−ホウ化クロムな
どのものでホウ化合チタンの含有量が８０％以上のもの
を言い、その相対密度は９０％以上のものが好ましい。In the present invention, a needle-like electrode refers to an electrode having at least a needle-like tip. Materials whose main component is titanium boride include titanium boride (TizB, TiB, TiBz, Ti
, B, etc.) and mixtures of titanium boride and other borides, nitrides, carbides, etc., such as titanium boride-boron nitride, titanium boride-aluminum nitride, titanium boride-tungsten carbide, titanium boride- The content of titanium boride is 80% or more, such as chromium boride, and the relative density is preferably 90% or more.
又クロムの硼化物を主成分とする材料とはホウ化クロム
（ＣｒＪ、 ＣｒｚＢ、ＣｒＢ 、 ＣｒＢｚなど）及
びホウ化クロムと他のホウ化物、窒化物、カーバイトな
どの混合体たとえばホウ化クロム−ホウ化モリブデン、
ホウ化クロム−ホウ化タングステン、ホウ化クロム−タ
ングステンカーバイド′、ホウ化クロム−窒化ホウ素な
どの混合体をいい、少くともホウ化クロムの含有量が８
０％以上のものを言い、その相対密度は９０％以上が好
ましい。Materials containing chromium boride as a main component include chromium borides (CrJ, CrzB, CrB, CrBz, etc.) and mixtures of chromium boride and other borides, nitrides, carbides, etc. molybdenum boride,
Refers to a mixture of chromium boride-tungsten boride, chromium boride-tungsten carbide', chromium boride-boron nitride, etc., and the content of chromium boride is at least 8
0% or more, and its relative density is preferably 90% or more.
金属又は合金としては前述したように、アルミニウム、
ヒ素、ホウ素、ゲルマニウム、スズ、銅、アルミニウム
ー銅、パラジウムーヒ素など種々のものが用いられるが
、特にアルミニウムー銅合金に対しては顕著な効果が認
められ、アルミニウムー銅合金のＭｉ戒はアルミニウム
が原子％で６６〜９５％のものを用いることができる。As mentioned above, metals or alloys include aluminum,
Various substances are used, such as arsenic, boron, germanium, tin, copper, aluminum-copper, and palladium-arsenic, but a particularly remarkable effect has been observed on aluminum-copper alloys, and the Mi precept for aluminum-copper alloys is can be used in an amount of 66 to 95% in atomic %.
針状電極および貯蔵部の材料は焼結体または単結晶体の
いずれでも使用できる。たとえば１００ｋｇ ／ ｃ−
以上の圧力であらかじめ成形した後、１６００〜２１０
０″Ｃの温度範囲で焼成した焼結体か、１００ ｋｇ／
ｃｍ２以上の加圧下で１６００〜２１００°Ｃの温度範
囲でホットプレス成形した成形体、または、フローティ
ングゾーン法で作成した単結晶の先端を針状に加工した
ものであっても良い。The material of the needle electrode and the reservoir can be either a sintered body or a single crystal body. For example 100kg/c-
After pre-forming with a pressure above, 1600 ~ 210
Sintered body fired in the temperature range of 0″C or 100 kg/
It may be a molded body hot-press-molded at a temperature range of 1600 to 2100° C. under pressure of cm2 or more, or a single crystal formed by a floating zone method whose tip is processed into a needle shape.
針状電極への加工は、上記焼結体または単結晶をワイヤ
カット放電加工機等で切断加工し、先端を機械研磨また
は電解研磨でとがらせる。先端曲率半径は、２μｍ以下
が好ましく、円錐角は、ｌＯ°〜６０°の範囲内が好ま
しいが、これに限定されるものではない。For processing into a needle-like electrode, the sintered body or single crystal is cut using a wire-cut electrical discharge machine or the like, and the tip is sharpened by mechanical polishing or electrolytic polishing. The radius of curvature of the tip is preferably 2 μm or less, and the cone angle is preferably within the range of 10° to 60°, but is not limited thereto.
貯蔵部への加工は、上記焼結体をワイヤカット放電加工
機等で切断加工する。貯蔵部の構造は、該合金を、貯蔵
するとともに、針状電極に安定に、供給できるものであ
ればよいが、針状電極の基部外形に、合わせた内面を有
する基部と、前記合金を、貯蔵する凹部を備えたものが
好ましい。To process the storage portion, the sintered body is cut using a wire-cut electrical discharge machine or the like. The structure of the storage part may be any structure as long as it can store the alloy and stably supply it to the needle-like electrode. Preferably, it is provided with a recess for storage.
次にこのイオン源構造体に次の方法により、金属又は合
金を貯蔵する。すなわち、たとえばアルミニウムー銅合
金の場合イオン源構造体がセットされた真空装置内にア
ルミニウムー銅合金を入れたルツボをセットし、１０−
”Ｔｏｒｒ以下で約７００°Ｃで加熱して、溶融した合
金中に該イオン源構造体を浸漬し、貯蔵部に合金を溜め
る。Next, a metal or alloy is stored in this ion source structure by the following method. That is, for example, in the case of an aluminum-copper alloy, a crucible containing the aluminum-copper alloy is set in a vacuum device in which an ion source structure is set, and 10-
The ion source structure is immersed in the molten alloy by heating at about 700° C. below Torr, and the alloy is deposited in a reservoir.
このようにして、準備したイオン源構造体を集束イオン
ビームとして引出し電圧５〜７ ｋＶ、動作温度５５０
〜６３０°Ｃで使用する。In this way, the prepared ion source structure is extracted as a focused ion beam at an extraction voltage of 5 to 7 kV and an operating temperature of 550 kV.
Use at ~630°C.
〈実施例〉 以下、実施例をあげて本発明を具体的に説明する。<Example> Hereinafter, the present invention will be specifically explained with reference to Examples.
（実施例１〜６、比較例１〜５）
表に示す針状電極の材料を加工して長さ５国の棒状にし
、先端を機械研磨により尖らせ、先端の曲率半径が０．
５μｍの針状電極１にした。材料の種類は表に示すとお
りである。なお、材料はタングステンの場合には塑性加
工品を用いたが、その他の材料の場合には原料粉をホッ
トプレス法で焼結したものを用いた。ホットプレスの条
件は温度は２０５０°Ｃ１圧力は１５０ ｋｇ／ｃｍ”
、時間は３０分であった。(Examples 1 to 6, Comparative Examples 1 to 5) The material of the needle electrode shown in the table is processed into a rod shape with a length of 5 mm, the tip is sharpened by mechanical polishing, and the radius of curvature of the tip is 0.
The needle-like electrode 1 was 5 μm thick. The types of materials are shown in the table. In the case of tungsten, a plastically worked product was used as the material, but in the case of other materials, raw material powder sintered by a hot press method was used. Hot press conditions are temperature: 2050°C, pressure: 150 kg/cm”
, the time was 30 minutes.
針状電極と同じ材料を長さ３．７ｍｍのスプーン状に加
工して貯蔵部２とした。ＢＮルツボ中に表に示すアルミ
ニウムー銅合金３を入れ、真空装置内でＩ ０−ｂＴｏ
ｒｒで８００°Ｃで工０°Ｃ加熱して、溶融したところ
に、イオン源の先端を浸漬させ、貯蔵部の中に表に示す
合金を入れた。The same material as the needle electrode was processed into a spoon shape with a length of 3.7 mm to form the storage part 2. The aluminum-copper alloy 3 shown in the table was placed in a BN crucible, and I0-bTo was heated in a vacuum device.
The tip of the ion source was immersed in the melted material by heating at 800° C. and 0° C., and the alloy shown in the table was placed in the reservoir.
次にこの電界放出型イオン源の発熱体５Ａ、５Ｂは通電
することによって貯蔵部を加熱し、貯蔵部内のアルくニ
ウム合金を融解させ、針状電極１の先端まで浸み出させ
た。貯蔵部の温度を６００°Ｃに保ち、イオン源本体と
引き出し電極７との間に高圧電ａ９により引き出し電圧
を印加した。引き出し電圧は、イオンビーム電流が常に
１０μＡになるように調節した。イオンビーム電流は、
電流計ＩＯにより監視し引き出し電圧は、高圧電源９に
付属の電圧計により測定した。Next, the heating elements 5A and 5B of this field emission type ion source heated the reservoir by applying electricity, melting the aluminium alloy in the reservoir and causing it to seep out to the tip of the needle electrode 1. The temperature of the storage section was maintained at 600° C., and an extraction voltage was applied between the ion source main body and the extraction electrode 7 by a high-voltage electric current a9. The extraction voltage was adjusted so that the ion beam current was always 10 μA. The ion beam current is
It was monitored with an ammeter IO, and the draw voltage was measured with a voltmeter attached to the high voltage power supply 9.
一方、比較のため、針状電極の材質、貯蔵部の材質を表
の比較例１〜５に示すように変えたものについても、動
作温度以外については上記の実施例と同じ条件で実施し
た。On the other hand, for comparison, experiments were conducted under the same conditions as in the above-mentioned Examples except for the operating temperature, with the materials of the needle-like electrodes and the storage parts changed as shown in Comparative Examples 1 to 5 in the table.
それらの結果を表に示す。針状電極として、チタンの硼
化物、貯蔵部にクロムの硼化物を用いた場合には、引き
出し電圧が５〜６ｋＶで、安定なイオンビームを３５０
〜４５０時間放出させることができた。The results are shown in the table. When titanium boride is used as the needle-shaped electrode and chromium boride is used as the storage part, the extraction voltage is 5 to 6 kV, and a stable ion beam can be generated at 350 kV.
It was possible to release it for ~450 hours.
又針状電極として、ＴｉＢｚ−ＢＮ、 ＴｉＢｇ−ＷＣ
，貯蔵部材料としてＣｒＢ、−ＢＮ、 ＣｒＢ、−ＷＣ
としたものもビームの安定性はよく、３００〜３５０時
間安定にイオンを放出させることができた。Also, as a needle electrode, TiBz-BN, TiBg-WC
, CrB, -BN, CrB, -WC as storage material
The beam stability was also good, and ions could be stably emitted for 300 to 350 hours.
寿命後のイオン源の状態は表に示すとおり、実施例１〜
６は針状電極、貯蔵部、隔壁とも反応、侵食もなく、良
好であったが比較例１〜５は各々、針状電極又は貯蔵部
又は隔壁との侵食が認められた。The state of the ion source after the service life is as shown in the table, in Examples 1 to 3.
Comparative Examples 1 to 5 showed no reaction or erosion with the needle electrode, storage portion, or partition wall, but corrosion with the needle electrode, storage portion, or partition wall was observed.
（発明の効果）
この発明の電界放出型イオン源は、針状電極と金属又は
合金との濡れ性が良く、また、針状電極が該金属又は合
金により侵食されることもなく、長時間安定に金属イオ
ンを放出させることができ、特にＩＣのアルミ配線にこ
れらのイオンを注入することにより、アルミ配線のマイ
グレーションを防止するのに有効である。(Effects of the Invention) The field emission ion source of the present invention has good wettability between the needle electrode and the metal or alloy, and the needle electrode is not corroded by the metal or alloy and is stable for a long time. In particular, by implanting these ions into the aluminum wiring of an IC, it is effective to prevent migration of the aluminum wiring.
第１図は本発明の電界放出型イオン源の断面図および付
属の電気回路図である。
符号 ｌ・・・針状電極、２Ａ、２Ｂ・・・貯蔵部、
３・・・アルミニウム合金、４Ａ、４Ｂ・・・隔壁、５
Ａ、５Ｂ・・・発熱体、６Ａ、６Ｂ・・・導電体、７・
・・引出し電極、８・・・イオンビーム、９・・・高圧
電源、１０・・・電流計FIG. 1 is a sectional view and an accompanying electrical circuit diagram of a field emission type ion source according to the present invention. Code 1: Needle electrode, 2A, 2B: Storage part,
3... Aluminum alloy, 4A, 4B... Partition wall, 5
A, 5B... heating element, 6A, 6B... conductor, 7.
... Extraction electrode, 8... Ion beam, 9... High voltage power supply, 10... Ammeter
Claims (1)
する貯蔵部とを有し、電界の作用で前記針状電極の先端
から、金属イオンを放出させる電界放出型イオン源にお
いて、前記針状電極がチタンの硼化物を主成分とする材
料であり、前記貯蔵部がクロムの硼化物を主成分とする
材料であることを特徴とする電界放出型イオン源。In a field emission type ion source, which has a needle-like electrode that supports a metal or an alloy with a liquid and a storage section that stores the alloy, metal ions are emitted from the tip of the needle-like electrode by the action of an electric field. 1. A field emission type ion source, wherein the shaped electrode is made of a material containing boride of titanium as a main component, and the storage portion is made of a material containing boride of chromium as a main component.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1275950A JP2688261B2 (en) | 1989-10-25 | 1989-10-25 | Field emission ion source |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1275950A JP2688261B2 (en) | 1989-10-25 | 1989-10-25 | Field emission ion source |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH03233826A true JPH03233826A (en) | 1991-10-17 |
| JP2688261B2 JP2688261B2 (en) | 1997-12-08 |
Family
ID=17562687
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1275950A Expired - Lifetime JP2688261B2 (en) | 1989-10-25 | 1989-10-25 | Field emission ion source |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2688261B2 (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP3479392A4 (en) * | 2016-06-30 | 2020-06-17 | Kla-Tencor Corporation | High brightness boron-containing electron beam emitters for use in a vacuum environment |
| WO2021015039A1 (en) * | 2019-07-23 | 2021-01-28 | 株式会社Ｐａｒａｍ | Electron gun device |
| US11201032B2 (en) | 2016-08-08 | 2021-12-14 | Asml Netherlands B.V. | Electron emitter and method of fabricating same |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5846542A (en) * | 1981-09-11 | 1983-03-18 | Nippon Telegr & Teleph Corp <Ntt> | Field emission liquid metal aluminum ion gun and its manufacture |
| JPS62140340A (en) * | 1985-12-14 | 1987-06-23 | Denki Kagaku Kogyo Kk | Field emission type ion source |
-
1989
- 1989-10-25 JP JP1275950A patent/JP2688261B2/en not_active Expired - Lifetime
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5846542A (en) * | 1981-09-11 | 1983-03-18 | Nippon Telegr & Teleph Corp <Ntt> | Field emission liquid metal aluminum ion gun and its manufacture |
| JPS62140340A (en) * | 1985-12-14 | 1987-06-23 | Denki Kagaku Kogyo Kk | Field emission type ion source |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP3479392A4 (en) * | 2016-06-30 | 2020-06-17 | Kla-Tencor Corporation | High brightness boron-containing electron beam emitters for use in a vacuum environment |
| US11201032B2 (en) | 2016-08-08 | 2021-12-14 | Asml Netherlands B.V. | Electron emitter and method of fabricating same |
| US11688579B2 (en) | 2016-08-08 | 2023-06-27 | Asml Netherlands B.V. | Electron emitter and method of fabricating same |
| WO2021015039A1 (en) * | 2019-07-23 | 2021-01-28 | 株式会社Ｐａｒａｍ | Electron gun device |
| KR20210114535A (en) * | 2019-07-23 | 2021-09-23 | 가부시키가이샤 파람 | electron gun device |
| US11295925B2 (en) | 2019-07-23 | 2022-04-05 | Param Corporation | Electron gun device |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2688261B2 (en) | 1997-12-08 |
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