JPH03229863A - Plasma device for film formation - Google Patents

Abstract

PURPOSE:To rapidly and easily form a film having a uniform thickness on a substrate by inclining the front surface of the substrate with plasma flow and rotating the substrate in such a manner that the intersected point of the central axis of the substrate and the central axis of the plasma flow exists on the substrate. CONSTITUTION:An annular target 18 in the inlet of a film forming chamber 3 is sputtered by plasma 16 formed in a plasma forming chamber 1 and the particles of a material for film formation are splashed in the plasma flow 17 to form a film 29 on the substrate 21 on a substrate imposing base 22. The substrate 21 is rotated around the central axis 25 by a means 31 in such a manner that the front surface of the substrate 21 exists on the surface inclined by a prescribed angle theta with the surface orthogonal with the central axis 26 of the plasma flow 17 and the intersected point P of the central axis 25 of the substrate 21 and the central axis 26 of the plasma flow 17 exists on the front surface of the substrate 21. The film having the uniform thickness is rapidly and easily formed on the substrate 21 in this way.

Description

[Detailed description of the invention] [Industrial application field]

The present invention relates to a film forming plasma apparatus for forming a film made of a desired film forming material on a desired film forming substrate by a sputtering method using a plasma flow.

[Conventional technology]

Conventionally, a plasma apparatus for film formation has been proposed as described below with reference to FIG. That is, there is a conductive container 2 forming a plasma generation chamber 1, and a conductive container 2 disposed below it and forming a film formation chamber 3 which is larger than the plasma generation chamber 1. It has a container 4. In this case, the lower wall of the container 2 forming the plasma generation chamber 1 and the center part of the upper wall of the container 4 forming the film forming chamber 3 form a common wall portion 5, and A circular window 6 is provided in the wall portion 5 to communicate the plasma generation chamber 1 and the film formation chamber 3. In addition, in the container 2 forming the plasma generation chamber 1,
A gas introduction pipe 7 communicating with the plasma generation chamber 1 from the outside is provided on the upper wall side thereof, and the gas introduction pipe 7 is led out from the plasma generation chamber 1 to the outside. A microwave introduction tube (rectangular waveguide) 9 is provided on the side wall side of the container 2 and communicates with the plasma generation chamber 1 from the outside through a microwave introduction window 8.
Therefore, a microwave introduction tube 9 is led out from the plasma generation chamber 1 to the outside through a micro introduction window 8, and an electromagnetic coil 10 is further arranged around the side wall of the container 2. Further, the container 4 forming the film forming chamber 3 is provided with another gas introduction pipe 11 communicating with the film forming chamber 3 from the outside on its side wall side, so that the film forming chamber 3 can be easily A gas introduction tube 11 is led out from the formation chamber 3 to the outside, and is connected from the outside into the film formation chamber 3 on a side wall side different from the side where the gas introduction tube 11 is provided. An exhaust pipe 12 is provided, and therefore, from the film forming chamber 3,
An exhaust pipe 12 is led out. According to the above-described configuration, while the plasma generation chamber 1 and the film formation chamber 3 are exhausted to the outside via the exhaust pipe 12 led out from the film formation chamber 3, the plasma generation chamber 1 and the film formation chamber 3 are exhausted. Plasma generation, such as an inert gas such as argon, is carried out from the outside through one or both of the gas introduction pipes 7 and 11 led out from the chamber 1 and the film forming chamber 3, respectively. The plasma generation chamber 1 and the film formation chamber 3 are maintained at a constant pressure by introducing the plasma generation gas 13 (in the figure, through the gas introduction pipe 11). I can do it. In addition, by supplying an excitation current to the electromagnetic coil 10 from the outside, it is possible to supply the excitation current to the plasma generation chamber 1 and the film formation chamber 3 (from the plasma generation chamber 1 side to the film formation chamber 3 side). In this direction, it is possible to generate a divergent magnetic field whose magnetic flux density gradually decreases from a high magnetic flux density of 875 Gaum in the plasma generation chamber 1 to 7) 3 is maintained at a constant pressure by the plasma generation gas 13 as described above, into the plasma generation chamber 1 from the outside via the micro introduction tube 9 and the microwave introduction window 8, For example, by introducing the microwave 14 having a frequency of 2.45 GH2 and supplying an excitation current to the electromagnetic coil 10 from the outside, the plasma generation gas is generated in the plasma generation chamber 1 by electron cyclotron resonance. 13 plasma 16 is generated, and the plasma 16 is introduced into the film forming chamber 3 through the window 6 that communicates the plasma generating chamber 1 and the film forming character 3.
It can be introduced as a plasma stream 17. Therefore, the conventional film forming plasma apparatus shown in FIG.
It has means for generating a plasma flow 17 by the plasma 16 of the plasma generation gas 13. Further, in the conventional film forming plasma apparatus shown in FIG. 6
It has a ring-shaped target 18 arranged concentrically with the target. The target 18 arranged in this manner is arranged concentrically with the plasma flow 17 described above so as to be in contact with the plasma flow 17 described above on its inner surface. Therefore, the conventional film forming plasma apparatus shown in FIG.
It has a circular ring-shaped target 18 made of a film-forming material and arranged concentrically with the plasma flow 17 so as to be in contact with the plasma flow 17 on its inner surface. Further, in the conventional film forming plasma apparatus shown in FIG. 4, a high voltage is applied, which is led out of the film forming chamber 3 from the target 18, which is arranged so that the plasma flow 17 comes into contact with it, as described above. It has a terminal 20 for use. The high voltage application terminal 20 led out from the target 18 in this way has its positive polarity end connected to the container 2 forming the plasma generation chamber 1 and the container 4 forming the film forming chamber 3.
By connecting the negative polarity end of the voltage power supply 19, which is also connected to the ground, the high voltage of the high voltage power supply 19 is applied to the target 18 with negative polarity, so that the plasma flow 17 mentioned above comes into contact with the target 18. If the plasma flow 17 is flowing, the positive ions of the plasma generation gas in the plasma flow 17 will rush into the target 18, and the particles (mainly ionized) of the film forming material constituting the target 18 will be ) can be scattered into the plasma stream 17. Therefore, the conventional film forming plasma apparatus shown in FIG.
From the target 18 described above, the plasma flow 17 described above
It has a means for scattering particles of the film-forming material into the plasma flow 17 described above using the ions. Furthermore, the conventional film forming plasma apparatus shown in FIG.
In the film forming chamber 3, a conductive substrate mounting table 22 having a substrate mounting surface 23 on which a film forming substrate 21 is placed is disposed at a lower position thereof. In this case, the substrate mounting table 22 has a film forming substrate 21 disposed at a predetermined position on the substrate mounting surface 23, and the central axis 25 of the film forming substrate 21 is aligned as described above. It is fixedly disposed on the lower wall of the container 4 via suitable fixing means 24 so as to coincide with the central axis 26 of the plasma flow 17 generated. It also has an accelerating voltage application terminal 27 led out from the substrate mounting table 22 to the outside of the film forming chamber 3 . As described above, the film forming substrate 21 is placed on the substrate mounting surface 23 of the substrate mounting table 22 disposed in the film forming chamber 3 at the above-mentioned predetermined position, and As described above, if the negative polarity end of the acceleration power source 28 whose positive polarity end is connected to the ground is connected to the acceleration voltage application terminal 27 from which the substrate mounting table 22 is led out, the above-mentioned film If the plasma flow 17 scattering the particles of the film-forming material is obtained, the film-forming substrate 21 is irradiated by the plasma flow 17 scattering the particles of the film-forming material described above, and At that time, the acceleration mold 1 is placed on the film forming substrate 21.
Since the accelerating voltage of 128 is applied, an accelerating electric field is generated near the upper surface of the film forming substrate 21 that causes the particles of the film forming material to be incident perpendicularly to the upper surface of the film forming substrate 21. , a film 1129 made of a film forming material can be formed on the film forming substrate 21 . Therefore, the conventional film forming plasma apparatus shown in FIG.
It has a substrate mounting table 22 on which a film forming substrate 21 is placed, which is irradiated with the plasma flow 17 scattering particles of the film forming material described above. The above is the configuration of the conventionally proposed plasma apparatus for film formation. According to the conventional film forming plasma apparatus having such a configuration, it is clear from what has been described above that detailed explanation will be omitted, but the plasma 1 of the plasma generation gas 13 is
6 to generate a plasma flow 17, and the plasma flow 1
The particles of the film forming material constituting the target 18 are scattered into the plasma flow 17 using the plasma flow 17, and the film forming substrate is A film 29 made of a film forming material can be formed on the film forming substrate 21 by irradiating the film 21 with the film forming material. Therefore, the film 29 of the film forming material can be formed on the film forming substrate 21 by a sputtering method using the plasma flow 17. In addition, when the film 29 is formed on the film forming substrate 21 by being irradiated with the plasma flow 17 scattering particles of the film forming material, the particles of the film forming material are The plasma flow 17 irradiates the film forming substrate 21 with energy controlled to be lower than that when forming a film by a normal sputtering method that does not use a plasma flow. For this reason, according to the conventional plasma apparatus for film formation shown in FIG. , a film 29 is formed on the film forming substrate 21.
can be easily formed with high quality. (Problems to be Solved by the Invention) In the case of the conventional plasma apparatus for film formation shown in FIG. It is arranged concentrically with the plasma flow 17, and
A substrate mounting table 22 on which a film forming substrate 21 that is irradiated with a plasma stream 17 scattering particles of a film forming material is mounted is arranged such that the central axis 25 of the film forming substrate 21 is aligned with the central axis of the plasma aR 17. 26, the fixing means 24
It is fixedly disposed on the lower wall of the container 4 via. Therefore, the plasma flow 17 scattering the particles of the film forming material scatters the particles of the film forming material when viewed on a plane perpendicular to the central axis 26 of the plasma flow 17 in the vicinity of the film forming substrate 21. The particles are scattered and distributed at a density that is axially symmetrical about the central axis 26 of the flow 17, and therefore the central axis 25 of the film forming substrate 21. However, unless the distance between the target 18 and the film forming substrate 21 is sufficiently large, the density of the particles of the film forming material generally increases outward in the radial direction from the central axis 25 of the film forming substrate 21. It has a distribution that gradually decreases to a value that cannot be ignored. For this reason, in the case of the conventional film forming plasma apparatus shown in FIG. , the membrane 29 can only be formed with a thickness that is not negligible. Furthermore, if the distance between the target 18 and the film forming substrate 21 is made sufficiently large, the thickness 29 can be formed in a state where each part has a nearly uniform thickness. Since the density of the particles of the film-forming material in the vicinity decreases, it has the disadvantage that it takes a long time to form g129 to the required thickness. Therefore, the present invention aims to propose a novel plasma apparatus for film formation that does not have the above-mentioned drawbacks.

[Means to solve the problem]

The film-forming plasma apparatus according to the first invention of the present application has (a) means for generating a plasma flow using plasma of plasma-generating gas, as in the case of the conventional film-forming plasma apparatus described above in FIG. (2) a circular ring-shaped tagt made of a film-forming material and arranged concentrically with the plasma stream so as to be in contact with the plasma stream on its inner surface; and (2) ions of the plasma stream from the target. a means for scattering particles of the film-forming material into the plasma flow using a method; It has a board mounting stand. However, in the film forming plasma apparatus according to the first invention of the present application, in the film forming plasma apparatus having the configuration (A) above, (Row 1) the substrate mounting table; (i) the substrate mounting table; maintaining the upper surface of the film-forming substrate placed on the table on a plane that is inclined with respect to a plane perpendicular to the central axis of the plasma flow, and (i1) placing the substrate; The intersection point between the central axis of the film-forming substrate placed on the substrate and the central axis of the plasma flow is maintained on the upper surface of the manure film-forming substrate or on a nearby surface parallel thereto. The film forming substrate has means for rotating around the central axis of the film forming substrate while the film forming substrate is in a state where the film is formed on the substrate. Furthermore, the film-forming plasma apparatus according to the second invention of the present application is similar to the film-forming plasma apparatus according to the first invention of the present application, and is different from the conventional film-forming plasma apparatus described above in FIG. In a similar film-forming plasma apparatus having the configuration of (a) above, (Row 2) the substrate mounting table is (i) the film-forming plasma device placed on the substrate mounting table; (ii) maintaining the upper surface of the substrate on a plane that is inclined with respect to a plane perpendicular to the central axis of the plasma flow, and (ii) the film forming substrate placed on the substrate mounting table; The central axis of the film forming substrate is aligned with the intersection of the central axis of the substrate and the central axis of the plasma flow on the upper surface of the film forming substrate or on a nearby surface parallel thereto. While rotating as
It has means for causing the plasma flow to revolve around a central axis. (Operations/Effects j) The film forming plasma apparatus according to the first invention of the present application has the following features in the conventional film forming plasma apparatus described above in FIG.
Instead of the board mounting table being fixed, the above (row 1)
) has a structure similar to that of the conventional plasma apparatus for film formation described above in FIG. have For this reason, the film forming plasma apparatus according to the first invention of the present application also generates a plasma flow using the plasma of the plasma generating gas, as in the case of the conventional film forming plasma apparatus described above in FIG. Using a plasma flow, particles of the film-forming material constituting the target are removed from the target.
A film-forming substrate is irradiated with a plasma flow that scatters particles of the film-forming material in the plasma flow, and a film of the film-forming material can be formed on the film-forming substrate. can. Therefore, in the film forming plasma apparatus according to the first invention of the present application, as in the case of the conventional film forming plasma apparatus described above in FIG. It can be formed by a sputtering method using plasma flow. In addition, in this case, the film forming plasma apparatus according to the first invention of the present application also has a film forming apparatus on a film forming substrate, as in the case of the conventional film forming plasma apparatus described above in FIG. When a film is formed by being irradiated by a plasma flow that scatters particles of the material, the particles of the film-forming material form a film by the plasma flow by a normal sputtering method that does not use a plasma flow. The film-forming substrate is irradiated with energy controlled to be lower than in the case of irradiation. Therefore, in the case of the film forming plasma apparatus according to the first invention of the present application, as well as in the case of the conventional film forming plasma apparatus described above in FIG. It is possible to form a film on a film forming substrate without applying high temperatures as in the case of forming a film by sputtering method.
Films can be easily formed with high quality. However, in the case of the film forming plasma apparatus according to the first invention of the present application, the target is in the shape of a circular ring, as in the case of the conventional film forming plasma apparatus described above in FIG. The target is arranged concentrically with the plasma flow so that its inner surface is in contact with the plasma flow, but a film-forming substrate is placed thereon which is irradiated by the plasma flow that scatters particles of the film-forming material. (i) Place the substrate mounting table on a surface where the upper surface of the film forming substrate placed on the substrate mounting table is inclined with respect to a plane perpendicular to the central axis of the plasma flow. and (ii) the intersection of the central axis of the film forming substrate placed on the substrate mounting table and the central axis of the plasma flow is on the upper surface of the film forming substrate or in the vicinity parallel thereto. It has a means for rotating about the central axis of the film forming substrate while maintaining the film forming substrate in a plane relationship. For this reason, using that means, the substrate mounting table is mounted on the above (
In states i) and (ii), if the film-forming substrate is rotated about its central axis, the plasma flow that scatters the particles of the film-forming material will move in the direction along the central axis of the plasma flow. Generally, the particles of the film-forming material are scattered and distributed at a density that gradually increases as they reach the upstream side (target side) of the plasma flow, so that the plasma flow is centered near the film-forming substrate. When viewed on a plane perpendicular to the axis, the particles of the film-forming material are generally arranged axially symmetrically around the central axis of the plasma flow, but gradually as they move outward in an annular direction from the central axis of the plasma flow. Even if the scattering distribution is reduced, and even if the distance between the target and the film-forming substrate is not made sufficiently large, the plasma flow on the upper surface of the film-forming substrate in the relationship (i) above will change. If the inclination angle with respect to the plane perpendicular to the central axis is appropriately selected in advance, the film made of the film-forming material can be formed on the film-forming substrate with little or no thickness unevenness. , it can be easily formed as having only a much smaller thickness unevenness than that of the conventional film forming plasma apparatus described above in FIG. In addition, since a film made of the film-forming material can be formed on the film-forming substrate in this way, there is no need to make the distance between the target and the film-forming substrate sufficiently large. By making the distance between the film-forming substrate and the film-forming substrate relatively short, it is possible to easily form a film using the film-forming material in a required space with uniform thickness in each part in a short time. Further, in the film forming plasma apparatus according to the second invention of the present application, in the film forming plasma apparatus according to the first invention of the present application, the substrate mounting table of the above (row 1) is aligned with the central axis of the film forming substrate. Instead of the means for rotating around the axis, the above (D
-2), except that the substrate mounting table has means for rotating around the central axis of the film forming substrate and revolving around the central axis of the plasma flow; It has the same configuration as the film forming plasma apparatus by . Therefore, even in the case of the film forming plasma apparatus according to the second invention of the present application, although detailed explanation is omitted, it is similar to the case of the conventional film forming plasma apparatus described above in FIG. As in the case of the plasma device for film formation according to the invention, it is possible to form a film on a film formation substrate without applying high temperatures as in the case of forming a film by the usual sputtering method that does not use a plasma flow on the film formation substrate. , films of high quality can be easily formed. However, in the case of the film-forming plasma apparatus according to the second invention of the present application, the target is in the shape of a circular ring, as in the case of the film-forming plasma apparatus according to the first invention of the present application, and such a target is , a substrate mount on which a film-forming substrate is placed, which is arranged concentrically with the plasma flow so as to be in contact with the plasma flow on its inner surface, but is irradiated by the plasma flow that scatters particles of the film-forming material. The mounting table is placed in such a manner that (i) the upper surface of the film forming substrate placed on the substrate mounting table is on a plane that is inclined with respect to a plane perpendicular to the central axis of the plasma flow; (i1) The intersection of the central axis of the film forming substrate placed on the substrate mounting table and the central axis of the plasma flow is on the upper surface of the film forming substrate or on a nearby surface parallel thereto. In the same state as in the case of the film-forming plasma apparatus according to the first invention of the present application, in which the film-forming substrate is rotated around the central axis, the plasma flow is rotated around the central axis. It has a means to revolve. For this reason, using that means, the substrate mounting table is mounted on the above (
In the same state as in the case of the film-forming plasma apparatus according to the first invention of the present application in i) and (i1), the plasma flow is rotated around the central axis of the film-forming substrate while rotating around the central axis of the film-forming substrate. However, the substrate mounting table cannot be rotated around the central axis of the plasma flow.
It is clear that if only the film forming substrate is rotated about its central axis, the same operation and effect as in the case of the film forming plasma apparatus according to the first aspect of the present invention can be obtained. On the other hand, if the substrate mounting table is made to revolve around the central axis of the plasma flow, the plasma flow scattering particles of the film forming material will be perpendicular to the central axis of the plasma flow near the film forming substrate. Even if the density distribution of the particles of the film forming material is uneven on the concentric circle centered on the central axis of the plasma flow on the surface to be formed, the film forming substrate is not affected by the unevenness of the density distribution of the particles of the film forming material. irradiated. From the above, according to the film forming plasma apparatus according to the second invention of the present application, the plasma flow that scatters the particles of the film forming material is perpendicular to the central axis of the plasma flow in the vicinity of the film forming substrate. Even if it is not possible to form a film even if it is not possible for various reasons to have non-negligible density distribution unevenness of the particles of the film-forming material on concentric circles centered on the central axis of the plasma flow on the surface. A film made of the same material can be easily formed to a desired thickness that is uniform in each part.

[Embodiment 1] Next, an embodiment of a plasma apparatus for film formation according to the first invention of the present application will be described with reference to FIG. In FIG. 1, parts corresponding to those in FIG. 4 are designated by the same reference numerals, and detailed description thereof will be omitted. The embodiment of the film forming plasma apparatus according to the first invention of the present application shown in FIG. 1 has the same configuration as the conventional film forming plasma apparatus described above with reference to FIG. 4, except for the following points. That is, instead of the substrate mounting table 22 being fixedly arranged on the lower wall of the container 4 forming the film forming chamber 3 via the fixing means 24, The mounting table 22 is (i
) The upper surface of the film-forming substrate 21 placed on the substrate mounting table 22 is maintained on a plane inclined with respect to the plane perpendicular to the central axis 26 of the plasma flow 17, and (
ii) The intersection point P between the central axis 25 of the film forming substrate 21 placed on the substrate mounting table 22 and the central axis 26 of the plasma flow 17 is on the upper surface of the film forming substrate 21 or in the vicinity parallel thereto. It has a means 31 for rotating the film forming substrate 21 about the central axis 25 while maintaining a certain relationship on the surface (in the figure, the upper surface of the film forming substrate 21). Note that this means 31 can be configured using various configurations that are known per se, so detailed explanation will be omitted. The above is the configuration of the embodiment of the plasma apparatus for film formation according to the first invention of the present application. According to the plasma apparatus for film formation according to the first invention of the present application having such a configuration, in the conventional plasma apparatus for film formation described above in FIG. , a container 4 forming a membrane forming chamber 3
Instead of being fixed to the substrate mounting table 22 described above,
The structure is similar to that of the conventional film forming plasma apparatus described above with reference to FIG. 4, except that it includes a means 31 for rotating about the central axis of the film forming substrate 21. Therefore, the film forming plasma apparatus according to the first invention of the present application shown in FIG.
A plasma stream 17 is generated by the plasma 16, and the particles of the film forming material constituting the target 18 are scattered from the target 18 into the plasma stream 17 using the plasma stream 17. The film forming substrate 21 is irradiated with the plasma flow 17 scattering particles,
On the film forming substrate 21, a WA2 made of a film forming material is placed.
9 can be formed. Therefore, in the film forming plasma apparatus according to the first invention of the present application, as in the case of the conventional film forming plasma apparatus described above in FIG. can be formed by a sputtering method using a plasma flow. Further, in this case, the film forming plasma apparatus according to the first invention of the present application shown in FIG.
When forming a film 29 by being irradiated by a plasma stream 17 scattering particles of film-forming material on top of the plasma stream 17, the particles of film-forming material are exposed to the plasma stream 17.
Accordingly, the film forming substrate 21 is irradiated with energy controlled to be lower than that when forming a film by a normal sputtering method that does not use a plasma flow. Therefore, in the case of the film forming plasma apparatus according to the first invention of the present application shown in FIG. 1, the film forming substrate 21 is
To easily form a film 29 with good quality on a film forming substrate 21 without applying high temperatures as in the case of forming a film by a normal sputtering method that does not use a plasma flow. be able to. However, in the case of the film forming plasma apparatus according to the first invention of the present application shown in FIG. 1, as in the case of the conventional film forming plasma apparatus described above in FIG.
is in the shape of a circular ring, and such a target 18 is arranged concentrically with the plasma stream 17 so as to be in contact with the plasma stream 17 on its inner surface, but without scattering particles of the film-forming material. The substrate mounting table 22 on which the film forming substrate 21 that has been irradiated by the plasma flow 17 is mounted is placed on the upper surface of the film forming substrate 21 placed on the substrate mounting table 22. is the central axis 2 of the plasma flow 17
(ii) the central axis 25 of the film forming substrate 21 placed on the substrate mounting table 22 and the plasma flow 17; The intersection point P with the central axis 26 of
It has a means 31 for rotating about the central axis of the film forming substrate 21 while maintaining a certain relationship (on the top surface of the film forming substrate 21). Therefore, using the means 31, the substrate mounting table 22 is placed on the film forming substrate 22 in the states (i) and (i1) above.
When the plasma flow 17 is rotated about the central axis 25 of the plasma flow 17, the plasma flow 17 scattering particles of the film forming material becomes
Generally, particles of the film forming material are placed on the upstream side of the plasma flow 17 (target 18
Since the plasma flow 17 is scattered and distributed at a density that gradually increases as it approaches the film forming substrate 21, the plasma flow 17 is distributed at
Generally, the particles of the film-forming material are arranged in a plasma stream 17 that is axially symmetrical about the central axis 26 of the plasma stream 17.
Even if the scattering distribution is carried out at a density that gradually decreases as it goes outward in the radial direction from the central axis 26 of the target 18, the distance between the target 18 and the film forming substrate 21 is not made sufficiently large. If the inclination angle θ of the upper surface of the film forming substrate 21 with respect to the plane perpendicular to the central axis 26 of the plasma flow 17 in the relationship (i) above is selected in advance, the film forming substrate 21
Above, the film 29 made of the film forming material has almost no thickness unevenness, or even if it does have it, it is much more uneven than that of the conventional film forming plasma apparatus described above in FIG. It can be easily formed as having only small thickness unevenness. Incidentally, the film 29 formed on the film forming substrate 21 by the conventional film forming plasma apparatus described above in FIG.
As shown by the curve 41 in FIG. 2, when the film-forming substrate 21 is obtained with an uneven thickness that becomes thinner as it goes outward in the radial direction from the center of the central axis 25, as shown in FIG. A film is formed on the film forming substrate 21 by the film forming plasma apparatus according to the present invention using the conventional film forming plasma apparatus described above in FIG. 4, except that the substrate mounting table 22 is rotated as described above. As shown by the curve 42 in FIG. 2, the film 29 formed under the same conditions as when the film 29 was formed on the substrate 21 was formed using the conventional film forming plasma apparatus described above in FIG. Compared to the case of the film 29 formed on the substrate 21, the thickness unevenness was sufficiently small. However, the curve 42 shows the result when the inclination angle θ of the upper surface of the film forming substrate 21 with respect to the plane perpendicular to the central axis 26 of the plasma flow 17 is 45°. Further, as described above, since the film 29 made of the film forming material can be formed on the film forming substrate 21, there is no need to make the distance between the target 18 and the film forming substrate 21 sufficiently large. Therefore, by making the distance between the target 18 and the film-forming substrate 21 relatively short, the film 29 made of the film-forming material can be easily formed to the required thickness uniformly in each part in a short time. can be formed.

[Embodiment 2] Next, an embodiment of a film forming plasma apparatus according to the second invention of the present application will be described with reference to FIG. In FIG. 3, parts corresponding to those in FIG. 1 are designated by the same reference numerals, and detailed description thereof will be omitted. The embodiment of the film forming plasma apparatus according to the second invention of the present application shown in FIG. 3 is similar to the film forming plasma apparatus according to the first invention of the present application described above in FIG. 1, except for the following matters. It has a configuration. That is, the above (i) and (i1>) in the film forming plasma apparatus according to the first invention of the present application described above in FIG.
In this state, the substrate mounting table 22 is replaced with the means 31 for rotating around the central axis 25 of the film forming substrate 21, and the above (
In the same state as i) and (ii), place the board mounting table 22,
It has means 32 for causing the plasma flow 17 to revolve around the central axis 26 while rotating around the central axis 25 of the film forming substrate 21 . Note that this means 32 can be configured using various configurations that are known per se, so detailed explanation will be omitted. The above is the configuration of the film forming plasma apparatus according to the second invention of the present application. According to the plasma apparatus for film formation according to the second invention of the present application shown in FIG. 3 having such a configuration, except for the above-mentioned matters, Since it has the same configuration as the plasma device, a detailed explanation will be omitted, but it is similar to the conventional film forming plasma device described in FIG. 4 and according to the first invention of the present application described in FIG. As in the case of the plasma apparatus for film formation, a film can be formed on the film formation substrate 21 without applying high temperature to the film formation substrate 21 as in the case of forming a film by ordinary sputtering without using a plasma flow. 29 can be easily formed with high quality. However, in the case of the film forming plasma apparatus according to the second invention of the present application shown in FIG. 3, as in the case of the film forming plasma apparatus according to the first invention of the present application described above in FIG. It has a circular ring shape, and
Such a target 18 is arranged concentrically with the plasma stream 17 such that it is in contact with the plasma stream 17 on its inner surface, but is irradiated by the plasma stream 17 scattering particles of film-forming material. The substrate mounting table 22 on which the film forming substrate 21 is placed is placed such that (i) the upper surface of the film forming substrate 21 placed on the substrate mounting table 22 is aligned with the central axis 26 of the plasma flow 17; The central axis 25 of the film forming substrate 21 is maintained on a plane that is inclined with respect to the orthogonal plane, and (ii) is placed on the substrate mounting table 22.
and the central axis 26 of the plasma flow 17 are maintained in a relationship such that the intersection point P between the center axis 26 of the plasma flow 17 is on the upper surface of the film forming substrate 21 or on a nearby surface parallel thereto (in the figure, on the upper surface of the film forming substrate 21), In the same state as in the case of the film-forming plasma apparatus according to the first invention of the present application described above in FIG. 1, the central axis 26 of the plasma flow 17 is It has means 32 for revolving around it. Therefore, using the means 32, the substrate mounting table 22 can be mounted in the same way as in the case of the film forming plasma apparatus according to the first invention of the present application described in (i) and (ii) above in FIG. In this state, the film forming substrate 21 can be rotated around the central axis 25 of the plasma flow 17 and revolved around the central axis 26 of the plasma flow 17. If only the film forming substrate 21 is rotated around the central axis 25 of the film forming substrate 21 without revolving around the central axis 26 of the It is clear that exactly the same actions and effects as in the case of a plasma device can be obtained. On the other hand, the substrate mounting table 22 is connected to the central axis 2 of the plasma flow 17.
6, the plasma flow 17 scattering particles of the film-forming material will move around the plasma flow 17 on a plane perpendicular to the central axis 26 of the plasma flow 17 in the vicinity of the film-forming substrate 21. Even if the density distribution of the particles of the film forming material is uneven on the concentric circles centered on the central axis 26, the film forming substrate 21 is irradiated with the plasma flow without being affected by the uneven density distribution. From the above, according to the film forming plasma apparatus according to the second invention of the present application shown in FIG.
On a plane orthogonal to the central axis 26 of the plasma flow 17 in the vicinity, on a concentric circle centered on the central axis 26 of the plasma flow 17, the density distribution unevenness of the particles of the film-forming material has a size that cannot be ignored. Even if a spare part is not available for various reasons, the film 1129 can be easily formed using the film-forming material to a desired thickness that is uniform in each part. Note that the above description merely shows a few embodiments of the present invention, and various modifications and changes may be made without departing from the spirit of the present invention.

[Brief explanation of drawings]

FIG. 1 is a route map showing an embodiment of a plasma apparatus for film formation according to the first invention of the present application. FIG. 2 shows the thickness unevenness of a film formed on a film forming substrate by the film forming plasma apparatus according to the first invention of the present application shown in FIG. FIG. FIG. 3 is a route map showing an embodiment of a film forming plasma apparatus according to the second invention of the present application. FIG. 4 is a route diagram showing a conventional plasma apparatus for film formation. 1・・・・・・・・・・・・・・・Plasma generation chamber 2
......... Container 3 forming plasma generation chamber 1 ...... Film formation chamber 4 ...
...... Container 5 forming membrane formation chamber 3 ...... Wall portion 6 ...
...... Window 7 ...... Gas introduction pipe 8 ...
・・・・・・・・・・・・Micro introduction window 9...
......Microwave introduction tube 10...
・・・・・・・・・・・・Electromagnetic coil 11・・・・・・
......Gas introduction pipe 12...
・・・・・・Exhaust pipe 13・・・・・・・・・・・・・
...Plasma generation gas 14...
・・・Microwave 16・・・・・・・・・・・・・・・
Plasma 17・・・・・・・・・・・・Plasma flow 18・・・・・・・・・・・・Target 19
・・・・・・・・・・・・・・・High voltage power supply 20・・・・
......High voltage application terminal 21...
......Film forming substrate 22...
...... Board mounting stand 24 ......
・・・・・・Fixing means 25・・・・・・・・・・・・
... Central axis 26 of the film forming substrate 21 ...
... Central axis 29 of plasma flow 17 ...
・・・・・・・・・Membrane 31.32・・・Means

Claims (2)

[Claims] 1. A means for generating a plasma flow using plasma of a plasma generation gas; and a ring-shaped ring made of a film-forming material and arranged concentrically with the plasma flow so as to be in contact with the plasma flow. a target, means for scattering particles of the film-forming material from the target into the plasma flow using ions of the plasma flow, and a plasma flow that scatters the particles of the film-forming material. In a film forming plasma apparatus having a substrate mounting table on which a film forming substrate to be irradiated is placed, the substrate mounting table is (i) placed on the substrate mounting table; (ii) the film forming substrate is placed on the substrate mounting table, and (ii) the film forming substrate is placed on the substrate mounting table; the film forming substrate in a state where the intersection point between the central axis of the film forming substrate and the central axis of the plasma flow is on the top surface of the film forming substrate or on a nearby surface parallel to the top surface of the film forming substrate; 1. A plasma device for forming a film, comprising means for rotating around a central axis of the plasma device. 2. A means for generating a plasma flow using plasma of a plasma generation gas, and a ring-shaped ring made of a film forming material and arranged concentrically with the plasma flow so as to be in contact with the plasma flow. a target; means for scattering particles of the film-forming material from the target into the plasma flow using ions of the plasma flow; and a means for scattering particles of the film-forming material from the target into the plasma flow. In a film forming plasma apparatus having a substrate mounting table on which a film forming substrate to be irradiated is placed, the substrate mounting table is (i) placed on the substrate mounting table; The upper surface of the film forming substrate is maintained on a plane that is inclined with respect to a plane perpendicular to the central axis of the plasma flow, and (ii) is placed on the substrate mounting table. The intersection of the central axis of the film forming substrate and the central axis of the plasma flow is maintained on the upper surface of the film forming substrate or on a nearby surface parallel to the upper surface of the film forming substrate. While rotating around the central axis,
A plasma device for forming a film, comprising means for causing the plasma flow to revolve around a central axis.