JPH03226578A - Glow-discharge decomposition device - Google Patents
Glow-discharge decomposition deviceInfo
- Publication number
- JPH03226578A JPH03226578A JP2298490A JP2298490A JPH03226578A JP H03226578 A JPH03226578 A JP H03226578A JP 2298490 A JP2298490 A JP 2298490A JP 2298490 A JP2298490 A JP 2298490A JP H03226578 A JPH03226578 A JP H03226578A
- Authority
- JP
- Japan
- Prior art keywords
- chamber
- glow discharge
- film
- discharge decomposition
- fluorine
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000354 decomposition reaction Methods 0.000 title claims abstract description 19
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims abstract description 12
- 229910052737 gold Inorganic materials 0.000 claims abstract description 12
- 239000010931 gold Substances 0.000 claims abstract description 12
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims abstract description 12
- 229910021417 amorphous silicon Inorganic materials 0.000 claims abstract description 7
- 239000011241 protective layer Substances 0.000 claims abstract description 7
- 229910052697 platinum Inorganic materials 0.000 claims abstract description 6
- 238000000034 method Methods 0.000 claims description 5
- 239000012808 vapor phase Substances 0.000 claims 1
- 229910052731 fluorine Inorganic materials 0.000 abstract description 20
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 abstract description 19
- 239000011737 fluorine Substances 0.000 abstract description 19
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 abstract description 3
- 230000007797 corrosion Effects 0.000 abstract description 3
- 238000005260 corrosion Methods 0.000 abstract description 3
- 229910000077 silane Inorganic materials 0.000 abstract description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- 239000011248 coating agent Substances 0.000 abstract 1
- 238000000576 coating method Methods 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- 239000007789 gas Substances 0.000 description 19
- 239000010410 layer Substances 0.000 description 9
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 8
- 238000005530 etching Methods 0.000 description 8
- 238000007747 plating Methods 0.000 description 8
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 5
- 229910052742 iron Inorganic materials 0.000 description 4
- 239000000843 powder Substances 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 1
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- SWUWMVIPFQAITJ-UHFFFAOYSA-N chlorine difluoride-35cl Chemical compound FClF SWUWMVIPFQAITJ-UHFFFAOYSA-N 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 239000013256 coordination polymer Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
Landscapes
- Photoreceptors In Electrophotography (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明はアモルファスシリコン系の膜を生成するグロー
放電分解装置に関するものである。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a glow discharge decomposition apparatus for producing an amorphous silicon film.
アモルファスシリコン系の膜（以下、アモルファスシリ
コンをａ−５ｉと略す）をグロー放電分解法により形成
した場合には、その原料であるシランガスの分解に伴っ
て電極板やチャンバー内面に粉体や成膜体が発生し、汚
染される。このような汚染は同じグロー放電分解装置を
用いて次のａ−５ｉ系の膜を形成しようとすると成膜中
に取り込まれて成膜欠陥を引き起こし、その欠陥部で特
性劣化が生じる。When an amorphous silicon film (hereinafter amorphous silicon is abbreviated as a-5i) is formed by the glow discharge decomposition method, powder and film are formed on the electrode plate and the inner surface of the chamber as the silane gas, which is the raw material, decomposes. The body develops and becomes contaminated. When an attempt is made to form the next a-5i film using the same glow discharge decomposition apparatus, such contamination is taken in during film formation and causes film formation defects, resulting in deterioration of characteristics at the defective portions.
このような問題点を解決せんがために、ａ −５ｉ系の
膜の形成後に、そのチャンバー内部へｃｐ、。In order to solve these problems, after forming the a-5i film, CP was introduced into the chamber.
ＳＦ、、 ＮＦ、などのフッ素系エツチングガスを導入
してグロー放電を発生させ、そのエツチング作用により
上記粉体や成膜体をガス化して除去することが提案され
ている。また、Ｃｆｆ１ｈガスを用いた場合には、グロ
ー放電を発生させず、単にそのガスを流入するだけでエ
ツチングを行うことができる。It has been proposed to introduce a fluorine-based etching gas such as SF, NF, or the like to generate a glow discharge, and use the etching action to gasify and remove the powder or film-formed material. Further, when Cff1h gas is used, etching can be performed simply by flowing the gas without generating glow discharge.
しかしながら、その反面、そのフッ素がチャンバー内部
に残留し、チャンバーを構成する金属との間で化学反応
が生じ、チャンバー自体が腐食するという問題点がある
。However, on the other hand, there is a problem in that the fluorine remains inside the chamber and a chemical reaction occurs with the metal constituting the chamber, causing corrosion of the chamber itself.
また、上記フッ素系残留ガスは次回の成膜に当たってａ
−５ｉ系の膜に混入し、膜の特性が劣化したり、或いは
安定した特性が得られないという問題点もある。In addition, the above fluorine-based residual gas should be removed during the next film formation.
There is also the problem that it mixes into -5i-based films, resulting in deterioration of film properties or inability to obtain stable properties.
従って本発明は畝上に鑑みて案出されたものであり、そ
の目的はチャンバー内面もしくは電極板などのその内部
構成部材の腐食を防いで、それ自体の長期信頼性を達成
したグロー放電分解装置を提供することにある。Therefore, the present invention was devised in view of the above-mentioned problems, and its purpose is to provide a glow discharge decomposition device that achieves long-term reliability by preventing corrosion of internal components such as the inner surface of the chamber or electrode plates. Our goal is to provide the following.
本発明の他の目的は高品質且つ高信幀性の成膜形成がで
きるグロー放電分解装置を提供することにある。Another object of the present invention is to provide a glow discharge decomposition apparatus capable of forming a film of high quality and reliability.
本発明のグロー放電分解装置はチャンバーの内面もしく
は電極板などのチャンバー内の構成部材の表面に金また
は白金から成る保護層が被着してあることを特徴とする
。The glow discharge decomposition apparatus of the present invention is characterized in that a protective layer made of gold or platinum is deposited on the inner surface of the chamber or on the surface of the constituent members in the chamber such as the electrode plate.
上記構成のグロー放電分解装置である場合、フッ素系エ
ツチングガスは金や白金と反応せず、そのためにチャン
バー内面やその内部構成部材が腐食せず、また、残留す
るフッ素量が著しく少な（なる。In the case of the glow discharge decomposition apparatus having the above configuration, the fluorine-based etching gas does not react with gold or platinum, so the inner surface of the chamber and its internal components do not corrode, and the amount of residual fluorine is extremely small.
次に本発明を実施例により説明する。 Next, the present invention will be explained by examples.
グロー放電分解装置
第１図は本実施例に用いたグロー放電分解装置の断面で
あり、１は円筒形状の鉄製チャンバーであり、２は円板
形状の鉄製蓋体であり、その両者１．２の間には絶縁性
のセラミックリング３が介在する。Glow discharge decomposition device FIG. 1 is a cross-sectional view of the glow discharge decomposition device used in this example, where 1 is a cylindrical iron chamber, 2 is a disc-shaped iron lid, and both are 1.2. An insulating ceramic ring 3 is interposed between them.
蓋体２にはＡｌ製軸体４とＡＮ製円筒体５が順次接続さ
れ、更にその円筒体５の下方に被成膜用のＡｌ製ドラム
体６とＡＮ製円筒体７が順次配置されている。尚、／ｌ
製円筒体５．７はドラム体６を固定するとともに、その
ダミーの働きもある。An Al shaft body 4 and an AN cylinder body 5 are sequentially connected to the lid body 2, and an Al drum body 6 and an AN cylinder body 7 for film formation are arranged in sequence below the cylinder body 5. There is. Furthermore, /l
The cylindrical body 5.7 fixes the drum body 6 and also serves as a dummy.
８はシランなどの成膜ガスを供給する配管であり、９．
１０はそれぞれガス導入口及びガス排気口である。１１
は高周波電源であり、その両出力はチャンバー１と蓋体
２に接続される。8 is a pipe for supplying a film forming gas such as silane; 9.
10 are a gas inlet port and a gas exhaust port, respectively. 11
is a high frequency power source, both outputs of which are connected to the chamber 1 and the lid 2.
上記構成のグロー放電分解装置を用いて成膜する場合、
配管８を介してガス導入口９より入った成膜ガスはチャ
ンバー１とドラム体６の間の電力印加及び所定のガス圧
力下によりグロー放電分解し、これにより、ドラム体６
０周面にａ −５ｉ系の膜が形成する。When forming a film using a glow discharge decomposition apparatus with the above configuration,
The film-forming gas that entered from the gas inlet 9 via the pipe 8 is decomposed by glow discharge by applying electric power between the chamber 1 and the drum body 6 and under a predetermined gas pressure.
An a-5i film is formed on the 0 circumferential surface.
本発明者等は上記構成のグロー放電分解装置において、
チャンバーｌ及び蓋体２のそれぞれの内面に保護層とし
て厚み１μ鍋の金メツキ層１２を形成した。その層１２
を図中破線にて表す。In the glow discharge decomposition device having the above configuration, the present inventors
A gold plating layer 12 having a thickness of 1 μm was formed as a protective layer on the inner surface of each of the chamber 1 and the lid 2. The layer 12
is represented by a broken line in the figure.
かかる金メツキ層形成の装置を用いて成膜した場合、金
メ・ツキ層１２の表面上に粉体や成膜体が付着する。When a film is formed using such a gold plating layer forming apparatus, powder and film-forming material adhere to the surface of the gold plating layer 12.
ガスエツチング びフッ素量の検出
上記のように金メツキ層形成の装置を用いて成膜した後
、ドラム体６を除き、それに代えてダミーのＡｌ製ドラ
ム体を配置し、次いでＣｌＦ２ガスをガス導入口９より
チャンバー内部へ導入し、化学反応により上記粉体や成
膜体をガス化する。Gas etching and detection of fluorine amount After forming a film using the gold plating layer forming apparatus as described above, the drum body 6 was removed, a dummy Al drum body was placed in its place, and then ClF2 gas was introduced. The powder and film-formed material are introduced into the chamber through the port 9 and gasified by a chemical reaction.
このようなガスエンチング洗浄の後に、チャンバー内の
フッ素を第２図に示す方法により測定した。After such gas etching cleaning, fluorine in the chamber was measured by the method shown in FIG.
チャンバー１の一部として装着された金メツキ板１３（
−辺１００Ｉ１１の正方形状）を取り出し、その板１３
に対して純水の入ったスポイト１４により表面洗いを行
い、その使用純水量を１８ｃｃとした。A gold-plated plate 13 installed as part of the chamber 1 (
- take out a square shape with sides 100I11) and take out the board 13
The surface was washed using a dropper 14 containing pure water, and the amount of pure water used was 18 cc.
そして、その全純水量中のフッ素量を株式会社同仁化学
研究所のボナールキットーＦというフッ素検出試薬を用
いて検出した。Then, the amount of fluorine in the total amount of pure water was detected using a fluorine detection reagent called Bonard Kitto F manufactured by Dojindo Kagaku Kenkyusho Co., Ltd.
また、上記の１８ｃｃ純水による表面洗いを同手順によ
り３回繰り返し、それぞれのフッ素量を測定したところ
、第３図に示す通りの結果が得られた。Further, the surface washing with 18 cc of pure water was repeated three times using the same procedure, and the amount of fluorine was measured for each time, and the results shown in FIG. 3 were obtained.
同図中、横軸は水浸漬回数であり、縦軸は相対値で表す
フッ素量であり、・印は本例の測定プロットである。In the figure, the horizontal axis is the number of times of water immersion, the vertical axis is the amount of fluorine expressed as a relative value, and the * mark is the measurement plot of this example.
また比較例として、金メツキ層１２を形成しない前記金
メツキ板１３と同一寸法のアルミニウム板に対してガス
エツチングを上記の通りに行い、そのフッ素量を測定し
たところ、○印に示す測定プロットが得られた。As a comparative example, an aluminum plate having the same dimensions as the gold-plated plate 13 without the gold-plated layer 12 was gas-etched as described above, and the amount of fluorine was measured. Obtained.
更に上記比較例において、Ｃ／！Ｆ、ガスに代えてＣＦ
４ガスを用いて、前記アルミニウム板に対してグロー放
電によるプラズマガスエツチングを行い、フッ素量を測
定したところ、ｘ印に示す測定プロットが得られた。Furthermore, in the above comparative example, C/! F, CF instead of gas
When the aluminum plate was subjected to plasma gas etching by glow discharge using 4 gases and the amount of fluorine was measured, a measurement plot shown by the x mark was obtained.
第３図に示す結果より明らかな通り、金メツキ層を形成
したことによりフッ素を水により容易に洗い流すことが
できた。As is clear from the results shown in FIG. 3, by forming the gold plating layer, fluorine could be easily washed away with water.
本発明者等は金メツキ層を形成した実施例でもって本発
明を確認したが、白金から成る保護層によっても同様な
作用効果が得られると考える。Although the present inventors confirmed the present invention using an example in which a gold plating layer was formed, it is believed that similar effects can be obtained by using a protective layer made of platinum.
また、上記保護層の厚みは０．５μｍ以上であればよく
、その範囲に設定するとメツキなどを行っても厚みムラ
が小さくなり、被着面が露出しなくなるという点で有利
である。Further, the thickness of the protective layer need only be 0.5 μm or more, and setting it within this range is advantageous in that even if plating or the like is performed, the thickness unevenness will be small and the adhered surface will not be exposed.
以上の通り、本発明のグロー放電分解装置によれば、フ
ッ素系エツチングガスを用いて内部洗浄してもチャンバ
ー内面や電極板などの内部構成部材が腐食せず、それ自
体を長期間に亘って使用することができた。As described above, according to the glow discharge decomposition apparatus of the present invention, internal components such as the inner surface of the chamber and the electrode plate do not corrode even when the inside is cleaned using a fluorine-based etching gas, and the apparatus itself can be maintained for a long period of time. I was able to use it.
また本発明のグロー放電分解装置を用いた場合、ａ−５
ｉ系の成膜中にフッ素が含有せず、これにより、その膜
の特性が劣化せず、安定した半導体特性が得られる。Furthermore, when using the glow discharge decomposition apparatus of the present invention, a-5
Fluorine is not contained during the formation of the i-based film, which prevents the properties of the film from deteriorating and provides stable semiconductor properties.
第１図は実施例のグロー放電分解装置を示す打面図、第
２図はフッ素量の検出方法を表す図、第３図はフッ素量
の線図である。
１・・・鉄製チャンバー
２・・・鉄製蓋体
６・・・アルミニウム製ドラム体
１２・・・金メツキ層FIG. 1 is a diagram showing the glow discharge decomposition apparatus of the example, FIG. 2 is a diagram showing a method for detecting the amount of fluorine, and FIG. 3 is a diagram showing the amount of fluorine. 1... Iron chamber 2... Iron lid body 6... Aluminum drum body 12... Gold plating layer
Claims (1)
るチャンバー内に少なくとも電極板を配置してグロー放
電分解法により上記膜を気相成長せしめるグロー放電分
解装置において、前記チャンバーの内面もしくは電極板
などのチャンバー内の構成部材の表面に金または白金か
ら成る保護層が被着してあることを特徴とするグロー放
電分解装置。In a glow discharge decomposition apparatus in which at least an electrode plate is disposed in a chamber into which a gas for producing an amorphous silicon film is introduced, and the film is grown in vapor phase by a glow discharge decomposition method, the inner surface of the chamber or the electrode plate, etc. A glow discharge decomposition device characterized in that a protective layer made of gold or platinum is deposited on the surfaces of the components inside the chamber.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2298490A JPH03226578A (en) | 1990-01-31 | 1990-01-31 | Glow-discharge decomposition device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2298490A JPH03226578A (en) | 1990-01-31 | 1990-01-31 | Glow-discharge decomposition device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH03226578A true JPH03226578A (en) | 1991-10-07 |
Family
ID=12097813
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2298490A Pending JPH03226578A (en) | 1990-01-31 | 1990-01-31 | Glow-discharge decomposition device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH03226578A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH08283929A (en) * | 1995-04-07 | 1996-10-29 | Ulvac Japan Ltd | Material for vacuum |
| US6942892B1 (en) * | 1999-08-05 | 2005-09-13 | Anelva Corporation | Hot element CVD apparatus and a method for removing a deposited film |
-
1990
- 1990-01-31 JP JP2298490A patent/JPH03226578A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH08283929A (en) * | 1995-04-07 | 1996-10-29 | Ulvac Japan Ltd | Material for vacuum |
| US6942892B1 (en) * | 1999-08-05 | 2005-09-13 | Anelva Corporation | Hot element CVD apparatus and a method for removing a deposited film |
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