JPH03226104A - Air-tight package for electronic component and piezoelectric vibrator using the same - Google Patents
Air-tight package for electronic component and piezoelectric vibrator using the sameInfo
- Publication number
- JPH03226104A JPH03226104A JP2096790A JP2096790A JPH03226104A JP H03226104 A JPH03226104 A JP H03226104A JP 2096790 A JP2096790 A JP 2096790A JP 2096790 A JP2096790 A JP 2096790A JP H03226104 A JPH03226104 A JP H03226104A
- Authority
- JP
- Japan
- Prior art keywords
- ceramic
- layer
- ceramic substrate
- conductive path
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000919 ceramic Substances 0.000 claims abstract description 72
- 239000000758 substrate Substances 0.000 claims abstract description 28
- 239000011521 glass Substances 0.000 claims abstract description 11
- 238000002844 melting Methods 0.000 claims abstract description 11
- 230000008018 melting Effects 0.000 claims abstract description 8
- 229910052721 tungsten Inorganic materials 0.000 claims description 4
- 230000032683 aging Effects 0.000 abstract description 11
- 239000013078 crystal Substances 0.000 abstract description 11
- 238000007747 plating Methods 0.000 abstract description 3
- 238000007789 sealing Methods 0.000 abstract description 2
- 238000001354 calcination Methods 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 20
- 238000010586 diagram Methods 0.000 description 6
- 239000000463 material Substances 0.000 description 5
- 230000007547 defect Effects 0.000 description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
Landscapes
- Casings For Electric Apparatus (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
Abstract
Description
【発明の詳細な説明】
（産業上の利用分野）
本発明は電子部品用気密容器及びこれを用（Ｘた圧電振
動子を利用分野とし、特に気密漏れを防止して経年変化
特性を良好とした表面実装用の圧電振動子に関する。Detailed Description of the Invention (Industrial Field of Application) The present invention relates to an airtight container for electronic components and a piezoelectric vibrator using the same. This invention relates to a piezoelectric vibrator for surface mounting.
（発明の背景）
圧電振動子特に水墨振動子は時間あるいは周波数の基準
源又はフィルタ素子等に不可欠部品として有用されてい
る。近年では−抵抗、コンデンサ等のチップ素子に代表
されるように表面実装用のものが望まれている０例えば
このようなものの一つに、本出願人がすでに提案したよ
うなものがある（参照： 実開昭６４−３２１４号公報
）。(Background of the Invention) Piezoelectric vibrators, particularly ink vibrators, are useful as essential components for time or frequency reference sources, filter elements, and the like. In recent years, there has been a demand for surface-mount devices, as typified by chip devices such as resistors and capacitors.For example, one such device is one already proposed by the applicant (see : Utility Model Application Publication No. 64-3214).
（従来技術）
第２図はこのような従来例を説明する水晶振動子の分解
斜視図である。(Prior Art) FIG. 2 is an exploded perspective view of a crystal resonator illustrating such a conventional example.
水晶振動子は水晶片１、セラミック基板２、セラミック
カバー３及び接合材４からなる。水晶片１は例えば矩形
状のＡＴカットとし、両端部に電極５を延出する。そし
て、セラミック基板２に固着された保持部材６に両端部
を電気的・機械的に接続される。但し、セラミック基板
２の両端側にはｇｉ−第２及び第３の導電路７（ａｂｃ
）が形成される。′Ｍ１導電路７ａは保持具と接続し、
第２導電路７ｂはこれから外周部に延出する。第３導電
＃ ７ ｃはスルーホール加工（側面）により第２導電
路と接続して裏面に設けられる（第３図断面図）、そし
て、各導電路７は通常セラミックとの付着強度を良好と
するＷ（タングステン）層を下地とし、半田等とによる
接合のためにＮｉを二層目あるいはＡｕを更に三層目と
して積層する。The crystal resonator consists of a crystal piece 1, a ceramic substrate 2, a ceramic cover 3, and a bonding material 4. The crystal piece 1 has a rectangular AT cut, for example, and has electrodes 5 extending from both ends. Both ends are electrically and mechanically connected to a holding member 6 fixed to the ceramic substrate 2. However, gi-second and third conductive paths 7 (abc
) is formed. 'M1 conductive path 7a is connected to the holder,
The second conductive path 7b extends from this to the outer periphery. The third conductive path #7c is connected to the second conductive path by through-hole processing (side surface) and provided on the back side (cross-sectional view in Figure 3), and each conductive path 7 usually has good adhesion strength with the ceramic. A W (tungsten) layer is used as a base, and Ni is layered as a second layer or Au is further layered as a third layer for bonding with solder or the like.
セラミックカバー３は周壁土面をセラミック基板２の外
周に接合される。接合材４は低融点ガラスとする６ 例
えば、低融点ガラスをセラミックカバー３の周壁上面に
塗着してセラミック基板２上に当接させる。そして、約
４００乃至５００℃の雰囲気中で低融点ガラスを溶融し
て接合面を気密に封止する。そして、通常では経年変化
特性を良好とするため、窒素等の不活性ガスを封入した
構成とする。The ceramic cover 3 has a peripheral wall surface bonded to the outer periphery of the ceramic substrate 2. The bonding material 4 is low-melting glass 6 For example, low-melting glass is applied to the upper surface of the peripheral wall of the ceramic cover 3 and brought into contact with the ceramic substrate 2 . Then, the low melting point glass is melted in an atmosphere of about 400 to 500° C. to airtightly seal the bonding surface. In order to improve aging characteristics, the structure is usually filled with an inert gas such as nitrogen.
（従来技術の問題点）
しかしながら、上記構成の水晶振動子では、次のような
問題点が生ずることが判明した。すなわち、セラミック
基板２の外周部には第２導電路７ｂが延出する。そして
、第４図の断面図に示したように、低融点ガラスによる
封圧の際、セラミック基板２とセラミックカバー３との
接合面には第２導電路７ｃのＮｉ膜が露出して介在する
。そして、リーク試験の結果、この部分ではＮｉ膜と低
融点ガラスとのなじみが悪く、Ｎｉ膜の厚みに応じてリ
ーク不良を起こすことが判明した。但し、リーク試験は
Ｈｅガスを４ｋｇ−Ｆに加圧した状態で封入し、４時間
後のリーク量をＨｅデイタフタで検出して計測される。(Problems with the Prior Art) However, it has been found that the crystal resonator having the above configuration has the following problems. That is, the second conductive path 7b extends from the outer periphery of the ceramic substrate 2. As shown in the cross-sectional view of FIG. 4, when sealing pressure is applied by the low melting point glass, the Ni film of the second conductive path 7c is exposed and interposed at the bonding surface between the ceramic substrate 2 and the ceramic cover 3. . As a result of the leakage test, it was found that the Ni film and the low melting point glass were not compatible with each other in this part, and leakage failure occurred depending on the thickness of the Ni film. However, in the leak test, He gas is sealed in a pressurized state of 4 kg-F, and the amount of leak after 4 hours is detected and measured using a He datatameter.
第５図はリーク量をパラメータとした経年変化による周
波数変化特性を示す図である。すなわち、リーク試験に
おいて３Ｘ１０−８ａ ｔｍ−ｃｃ／５ｅｃ（曲線口乃
至ホ）のリークがあった場合には、１００００時間後に
は約５ＰＰｍ以上の周波数変化を生ずる。このようなこ
とから５周波数基準源等の高安定度を要求される分野で
は１通常上記リーク量のあったものを不良品（リーク不
良）とする、但し、経年変化特性は通常電子部品で用い
られる最も高温の１２５℃で測定される。FIG. 5 is a diagram showing frequency change characteristics due to aging using the amount of leakage as a parameter. That is, if there is a leak of 3X10-8a tm-cc/5ec (from curve opening to curve E) in the leak test, a frequency change of about 5 PPm or more will occur after 10,000 hours. For this reason, in fields that require high stability such as 5-frequency reference sources, products with the above leakage amount are usually considered defective (leak defect).However, aging characteristics are usually used in electronic components. Measured at the highest temperature of 125°C.
第６図は上記のＮ ｉ ＩＩ厚（横軸μｍ）とリーク不
良率（縦軸％）との関係を示す図である。なお。FIG. 6 is a diagram showing the relationship between the above-mentioned N i II thickness (horizontal axis μm) and leak failure rate (vertical axis %). In addition.
Ｎｉメツキは印刷焼成された１０〜２０μｍ程度のＷ（
タングステン）上に形成される。そして、Ｎｉ膜厚は１
μｍから６μｍの間として試料数はそれぞれ１０００個
としたときのリーク試験結果である。The Ni plating is printed and baked with W (about 10 to 20 μm thick).
tungsten). And the Ni film thickness is 1
These are the leak test results when the number of samples was 1000 each with a diameter between μm and 6 μm.
この図から明かなように、Ｎｉ膜厚は約１．５μｍ以上
では約５〜２５％以上の不良率を示して信頼性を損ねる
。また、１．５μｍ以下では不良率を０として気密性を
良好とする。しかし、このような厚みでは、図示しない
基板上に表面実装する場合１例えば半田食われを生じて
接続不良を引き起こす。したがって、このようなもので
は−Ｎｉ膜厚を１．５μｍ以下にできず、その結果リー
ク不良に起因した外囲気の侵入等により経年変化特性を
劣化させて信頼性に欠け、生産性を低下させる間層があ
った。なお、Ｎｉ膜厚を１．５μｍ以上としてリーク度
を３Ｘ１０−”ａ ｔｍ−ｃｃ／ｓｅｃ以内（ｊＩ５図
の曲線口）にするものも発生するが、その頻度は少なく
同一厚みでも均一性に（再現性）に欠ける。As is clear from this figure, when the Ni film thickness is about 1.5 μm or more, the defect rate is about 5 to 25% or more, which impairs reliability. Further, if the thickness is 1.5 μm or less, the defect rate is set to 0, and the airtightness is good. However, with such a thickness, when surface-mounting on a substrate (not shown), for example, solder erosion may occur, resulting in connection failure. Therefore, with such a product, the -Ni film thickness cannot be reduced to 1.5 μm or less, and as a result, the aging characteristics deteriorate due to the intrusion of surrounding air due to leakage defects, resulting in a lack of reliability and a decrease in productivity. There was an interlayer. In addition, there are cases where the Ni film thickness is 1.5 μm or more and the degree of leakage is within 3X10-" atm-cc/sec (the curved line in the jI5 diagram), but this is rare and even with the same thickness, the uniformity ( reproducibility).
（発明の目的）。(Object of the invention).
本発明は気密性を維持して経年変化特性を良好として高
信頼性の電子部品用容器及びこれを用いた圧電振動子を
提供することを目的とする。An object of the present invention is to provide a highly reliable container for electronic components that maintains airtightness and has good aging characteristics, and a piezoelectric vibrator using the same.
（解決手段）
本発明は、セラミック基板とセラミックカバーとの接合
面に介在する導電路の一層目上にセラミック層を形成し
、前記セラミック基板とセラミックカバーとの接合面を
全面的にセラミックとしたことを解決手段とする。以下
１本発明の一実施例を説明する。(Solution) The present invention forms a ceramic layer on the first layer of the conductive path interposed at the joint surface between the ceramic substrate and the ceramic cover, and makes the joint surface between the ceramic substrate and the ceramic cover entirely ceramic. This is the solution. An embodiment of the present invention will be described below.
（実施例）
第１肉は本発明の一実施例を説明する水晶振動子の要部
を示す断面図である。なお、前従来例図と同一部分には
同番号を付与してその説明は簡略する。(Example) The first part is a sectional view showing a main part of a crystal resonator explaining an example of the present invention. In addition, the same numbers are given to the same parts as in the previous conventional example diagram, and the explanation thereof will be simplified.
水墨振動子は前従来例同様に水晶片１の両端部をセラミ
ック基板２上の保持部材に接続し、接合材４を低融点ガ
ラスとしてセラミックカバー３を被せてなる（前第６図
参照）。そして、この実施例では、セラミック基板２に
おける導電路７の一層目をＷ膜とする１次に、セラミッ
ク基板２とセラミックカバー３との接合面を横所して介
在する第２導電路７ｂ上から、これを覆って例えば焼成
によりセラミック層８を形成する。そして、セラミック
層８の部分を除く一層目のＷ膜上にＮｉ膜をメツキ等に
より積層した構成とする。The ink vibrator is constructed by connecting both ends of a crystal piece 1 to a holding member on a ceramic substrate 2, as in the previous conventional example, and covering it with a ceramic cover 3 using low melting point glass as the bonding material 4 (see FIG. 6). In this embodiment, the first layer of the conductive path 7 in the ceramic substrate 2 is a W film, and the second conductive path 7b interposed across the bonding surface of the ceramic substrate 2 and the ceramic cover 3 is Then, covering this, a ceramic layer 8 is formed, for example, by firing. Then, a Ni film is laminated on the first W film except for the ceramic layer 8 by plating or the like.
このようなものでは、セラミック基板２とセラミックカ
バー３との接合面には、セラミック層８によりＮ ｉ
ｇは露出することがない。そして、両者の接合面を全面
的にセラミックとする。したがって、セラミックは低融
点ガラスと同様に酸化物であってなじみがよく、接合面
の全てに右いて気密封止を確実にする。例えば前述した
Ｈｅガスによるリーク試験の結果では４時間後のリーク
度は５Ｘ１０″９ａｔｍ−ｃｃ／ｓｅｃ以下とすること
が再現性をもって確認された。そして、これに起因して
経年変化特性も１００００時間後にその周波数変化量を
ＦＳｐｐ以内とする（前第５図曲線イ参照）。In such a device, the bonding surface between the ceramic substrate 2 and the ceramic cover 3 is covered with a ceramic layer 8, so that Ni
g is never exposed. The entire joint surface between the two is made of ceramic. Therefore, like low-melting glass, ceramic is an oxide and is compatible with all bonding surfaces to ensure a hermetic seal. For example, in the results of the leak test using He gas mentioned above, it was confirmed with reproducibility that the degree of leakage after 4 hours was less than 5X10''9 atm-cc/sec.And due to this, the aging characteristics also changed after 10,000 hours. Later, the amount of frequency change is made to be within FSpp (see curve A in the previous figure 5).
このようなことから、本実施例のものでは−従来例の中
でも最も頻度の少ない曲線口のものと比較しても、リー
ク度を１／１０以下にして経年変化特性も向上し、高信
頼性の水晶振動子を得ることができる。For this reason, in this example, the degree of leakage is reduced to 1/10 or less, the aging characteristics are improved, and the reliability is high, even when compared with the curved mouth type, which is the least frequent among conventional examples. crystal units can be obtained.
（他の事項）
なお、上記実施例では、セラミック基板２、セラミック
カバー３．及びセラミック層８は単にセラミックとした
が、具体的には何れもアルミナセラミック（Ａ１２０ｉ
）を主成分とする。また、セラミック層を第２導電路７
ｂ上を覆ってのみ形成したが、セラミック基板の接合面
の全てに周回してセラミック層を形成してもよい、また
、電子部品用容器はＡＴカットの水墨振動子を一例とし
て説明したが、これに限らず他のカットあるいは他の圧
電材（例えばＬ ｉ Ｔ ａ ０３）からなる圧電振動
子であっても、また気密を要する他の電子部品にも適用
できることはいうまでもない、また、第−層目上にセラ
ミック層を直接形成したが〜 要は一層目がＷ又はＭｏ
であって接合面となる最上部がセラミック層であって、
その間に気密を漏れを生じない他のものが積層されてあ
ってもよいものである。(Other matters) In the above embodiment, the ceramic substrate 2, the ceramic cover 3. Although the ceramic layer 8 and the ceramic layer 8 were simply made of ceramic, specifically, they were all made of alumina ceramic (A120i
) is the main component. Further, the ceramic layer is connected to the second conductive path 7.
Although the ceramic layer is formed only to cover the top of the ceramic substrate, it is also possible to form the ceramic layer around the entire bonding surface of the ceramic substrate.Also, the electronic component container has been described using an AT-cut ink vibrator as an example. Needless to say, the present invention is not limited to this, and can be applied to piezoelectric vibrators made of other cuts or other piezoelectric materials (for example, L i T a 03), as well as other electronic components that require airtightness. A ceramic layer was formed directly on the -th layer.The point is that the first layer is W or Mo.
and the top part that becomes the bonding surface is a ceramic layer,
In between, other materials may be laminated to ensure airtightness and prevent leakage.
（発明の効果）
本発明は、セラミック基板とセラミックカバーとの接合
面となる導電路の一層目上にセラミック層を形成し、前
記セラミック基板とセラミックカバーとの接合面を全面
的にセラミックとして低融点ガラスにより接合したので
、気密性を維持して経年変化特性を良好として高信頼性
の電子部品用容器及びこれを用いた圧電振動子を提供で
き、その実際的な価値は極めて高い。(Effects of the Invention) The present invention forms a ceramic layer on the first layer of the conductive path, which is the bonding surface between the ceramic substrate and the ceramic cover, and makes the bonding surface between the ceramic substrate and the ceramic cover entirely ceramic to reduce the cost. Since they are bonded using melting point glass, it is possible to maintain airtightness and have good aging characteristics to provide a highly reliable container for electronic components and a piezoelectric vibrator using the same, and its practical value is extremely high.
第１図は本発明の一実施例を説明する水晶振動子の要部
断面図である。
第２図は従来例を説明する水晶振動子の分解斜視図、第
３図は同セラミック基板の側面図、第４図は同断面図、
第５図は気密漏れと経年変化による一般的な周波数変化
特性図、第６図は同問題点を説明するリーク不良率を示
す図である。
第３０
Ｍ６図FIG. 1 is a sectional view of a main part of a crystal resonator illustrating an embodiment of the present invention. FIG. 2 is an exploded perspective view of a conventional crystal resonator, FIG. 3 is a side view of the ceramic substrate, and FIG. 4 is a sectional view of the same.
FIG. 5 is a typical frequency change characteristic diagram due to airtight leakage and aging, and FIG. 6 is a diagram showing a leak failure rate to explain the same problem. Figure 30 M6
Claims (2)
とした導電路を外周部に延出したセラミック基板と、前
記導電路を横断してセラミック基板に接合されるセラミ
ックカバーと、両者を気密に封止する接合用の低融点ガ
ラスとを具備してなる電子部品用気密容器において、前
記セラミック基板とセラミックカバーとの少なくとも接
合面に介在する前記導電路の一層目上にセラミック層を
形成、前記セラミック基板とセラミックカバーとの接合
面を全面的にセラミックとしたことを特徴とする電子部
品用気密容器。(1) Attach electronic elements and make the first layer W or Mo.
The ceramic substrate includes a ceramic substrate having a conductive path extending to the outer periphery, a ceramic cover that is bonded to the ceramic substrate across the conductive path, and a low melting point glass for bonding that airtightly seals both. In the airtight container for electronic components, a ceramic layer is formed on the first layer of the conductive path interposed at least at the bonding surface of the ceramic substrate and the ceramic cover, and the bonding surface of the ceramic substrate and the ceramic cover is entirely made of ceramic. An airtight container for electronic components, characterized by:
とする圧電振動子。(2) A piezoelectric vibrator, characterized in that the electronic element is configured as a piezoelectric piece.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2020967A JP3068150B2 (en) | 1990-01-31 | 1990-01-31 | Airtight container for electronic components and piezoelectric vibrator using the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2020967A JP3068150B2 (en) | 1990-01-31 | 1990-01-31 | Airtight container for electronic components and piezoelectric vibrator using the same |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH03226104A true JPH03226104A (en) | 1991-10-07 |
| JP3068150B2 JP3068150B2 (en) | 2000-07-24 |
Family
ID=12041942
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2020967A Expired - Lifetime JP3068150B2 (en) | 1990-01-31 | 1990-01-31 | Airtight container for electronic components and piezoelectric vibrator using the same |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3068150B2 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0443017U (en) * | 1990-08-07 | 1992-04-13 | ||
| JPH0597124U (en) * | 1992-05-21 | 1993-12-27 | 株式会社大真空 | Surface mount crystal unit |
-
1990
- 1990-01-31 JP JP2020967A patent/JP3068150B2/en not_active Expired - Lifetime
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0443017U (en) * | 1990-08-07 | 1992-04-13 | ||
| JPH0597124U (en) * | 1992-05-21 | 1993-12-27 | 株式会社大真空 | Surface mount crystal unit |
Also Published As
| Publication number | Publication date |
|---|---|
| JP3068150B2 (en) | 2000-07-24 |
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