JPH0322464B2 - - Google Patents
Info
- Publication number
- JPH0322464B2 JPH0322464B2 JP17915085A JP17915085A JPH0322464B2 JP H0322464 B2 JPH0322464 B2 JP H0322464B2 JP 17915085 A JP17915085 A JP 17915085A JP 17915085 A JP17915085 A JP 17915085A JP H0322464 B2 JPH0322464 B2 JP H0322464B2
- Authority
- JP
- Japan
- Prior art keywords
- temperature
- substrate
- water
- electron beam
- evaporation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 230000008020 evaporation Effects 0.000 claims description 11
- 238000001704 evaporation Methods 0.000 claims description 11
- 239000000498 cooling water Substances 0.000 claims description 6
- 238000005566 electron beam evaporation Methods 0.000 claims description 6
- 239000000758 substrate Substances 0.000 description 15
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 11
- 238000010438 heat treatment Methods 0.000 description 8
- 238000007740 vapor deposition Methods 0.000 description 7
- 230000004888 barrier function Effects 0.000 description 5
- 238000000151 deposition Methods 0.000 description 5
- 230000008021 deposition Effects 0.000 description 4
- 238000010894 electron beam technology Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 239000003507 refrigerant Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
Landscapes
- Physical Vapour Deposition (AREA)
Description
本発明は、半導体基板への電極形成、光学レン
ズのコーテイングなどに用いられる電子ビーム蒸
着装置に関する。
The present invention relates to an electron beam evaporation apparatus used for forming electrodes on semiconductor substrates, coating optical lenses, and the like.
電子ビーム蒸着装置は、水冷された蒸着ソース
ハース中の蒸着材料に電子ビームを照射して加熱
し蒸発させ、被蒸着体に付着させるものである。
この場合、蒸着膜質の制御は基板の加熱温度によ
つて行なうが、基板の加熱温度により限界があ
り、所望の膜質が精度よく得られない欠点があつ
た。
An electron beam evaporation apparatus irradiates an evaporation material in a water-cooled evaporation source hearth with an electron beam to heat and evaporate the material, thereby adhering it to an object to be evaporated.
In this case, the quality of the deposited film is controlled by the heating temperature of the substrate, but there is a limit depending on the heating temperature of the substrate, and there is a drawback that the desired film quality cannot be obtained with high accuracy.
本発明は、上述の欠点を除いて基板加熱温度を
高めることなく蒸着膜質を精度よく制御すること
ができる電子ビーム蒸着装置を提供することを目
的とする。
SUMMARY OF THE INVENTION It is an object of the present invention to provide an electron beam evaporation apparatus that eliminates the above-mentioned drawbacks and can accurately control the quality of a deposited film without increasing the substrate heating temperature.
本発明は、電子ビーム蒸着装置の蒸着ソースハ
ースの温度が蒸着膜質に大きな影響を及ぼすこと
に着目したもので、蒸着ソースハース冷却水の水
温調節手段を備えることにより、蒸着膜質を制御
して上記の目的を達成する。
The present invention focuses on the fact that the temperature of the evaporation source hearth of an electron beam evaporation apparatus has a large effect on the quality of the evaporated film, and by providing a means for adjusting the temperature of the evaporation source hearth cooling water, the quality of the evaporation film can be controlled and achieve the purpose of
第１図は本発明の一実施例を示す。蒸着室１は
真空ポンプ２により真空排気可能であり、天井面
に備えられた電子銃３に対向して蒸着ソースハー
ス４が配置されている。蒸着ソースハース４に収
容された蒸着材料５は電子銃３からの電子ビーム
により蒸発し、支持体６に取り付けられた基板７
上に蒸着膜を形成する。基板７は下方に配置され
た加熱ヒータ８により加熱される。蒸着ソースハ
ース４は銅あるいはステンレス鋼からなり、電子
ビームにより蒸発しないように水槽９からの水１
０により水冷されている。水槽９には本発明によ
り水温調整器１１が備えられ、冷媒を用いての強
制冷却あるいはヒータによる加熱により水１０の
温度を調整することができる。冷却水１０の温度
を下げることにより基板７の加熱温度を下げるこ
とができる。例えばモリブデンを半導体基板上に
蒸着してシヨツトキーバリアダイオードを製造す
る際、従来は基板加熱温度によつて障壁高さを制
御していた。すなわち、障壁高さを高くするため
には基板温度を上げ、低くするためには基板温度
を下げる。しかし水１０の温度を２℃下げること
により基板７の温度を約50℃下げて同等の障壁高
さを有するシヨツトキーバリアを得ることができ
る。この結果、従来350〜400℃であつた基板加熱
温度を低くできることにより、蒸着装置、例えば
パツキング等の寿命が長くなり、省エネルギーと
もなつて経済的効果が得られる。また蒸着室１を
開いて大気にさらす場合には、水10の温度を上
げ、蒸着ソースハース４へ露が結ぶことを防ぎ、
次の真空排気時間の短縮あるいは蒸着雰囲気中へ
の水蒸気の混入を阻止することができる。なお水
温の調整は冷却水１０の水量を変化させることに
よつても行うことができる。
FIG. 1 shows an embodiment of the invention. The deposition chamber 1 can be evacuated by a vacuum pump 2, and a deposition source hearth 4 is disposed opposite an electron gun 3 provided on the ceiling. The evaporation material 5 housed in the evaporation source hearth 4 is evaporated by the electron beam from the electron gun 3, and the substrate 7 attached to the support 6 is evaporated by the electron beam from the electron gun 3.
A vapor deposited film is formed on top. The substrate 7 is heated by a heater 8 placed below. The evaporation source hearth 4 is made of copper or stainless steel, and the water 1 from the water tank 9 is heated to prevent evaporation by the electron beam.
It is water-cooled by 0. The water tank 9 is equipped with a water temperature regulator 11 according to the present invention, and the temperature of the water 10 can be adjusted by forced cooling using a refrigerant or heating using a heater. By lowering the temperature of the cooling water 10, the heating temperature of the substrate 7 can be lowered. For example, when manufacturing a Schottky barrier diode by vapor depositing molybdenum onto a semiconductor substrate, conventionally the barrier height was controlled by the substrate heating temperature. That is, to increase the barrier height, the substrate temperature is increased, and to decrease it, the substrate temperature is decreased. However, by lowering the temperature of water 10 by 2°C, the temperature of substrate 7 can be lowered by about 50°C to obtain a Schottky barrier having the same barrier height. As a result, the substrate heating temperature, which was conventionally 350 to 400° C., can be lowered, thereby extending the life of the vapor deposition equipment, such as packing, and resulting in energy savings and economical effects. Furthermore, when the vapor deposition chamber 1 is opened and exposed to the atmosphere, the temperature of the water 10 is raised to prevent dew from forming on the vapor deposition source hearth 4.
It is possible to shorten the next evacuation time or prevent water vapor from entering the deposition atmosphere. Note that the water temperature can also be adjusted by changing the amount of cooling water 10.
本発明は、電子ビーム蒸着装置の蒸着ソースハ
ースの冷却水温度を調整可能にすることにより、
蒸着膜質を被蒸着基板の加熱温度の調整によらな
いで制御することができ、膜質の精度のよい制御
ができるほか、蒸着室開放時の露のソースハース
への付着を防止でき、また蒸着装置の寿命の延
長、省エネルギーなど得られる効果は極めて大き
い。
The present invention enables adjustment of the cooling water temperature of the evaporation source hearth of an electron beam evaporation apparatus.
The quality of the deposited film can be controlled without adjusting the heating temperature of the substrate to be deposited, and in addition to accurately controlling the quality of the film, it is possible to prevent dew from adhering to the source hearth when the deposition chamber is open, and it is also possible to The benefits such as extending the service life and saving energy are extremely large.
第１図は本発明の一実施例の断面図である。
１：蒸着室、２：真空ポンプ、３…電子銃、
４：蒸着ソースハース、５：蒸着材料、７：被蒸
着基板、９：水槽、１０：冷却水、１１：水温調
整器。
FIG. 1 is a sectional view of an embodiment of the present invention. 1: Vapor deposition chamber, 2: Vacuum pump, 3...Electron gun,
4: Vapor deposition source hearth, 5: Vapor deposition material, 7: Vapor deposition target substrate, 9: Water tank, 10: Cooling water, 11: Water temperature regulator.
Claims (1)
備えたことを特徴とする電子ビーム蒸着装置。1. An electron beam evaporation apparatus characterized by comprising means for adjusting the temperature of cooling water in a evaporation source hearth.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17915085A JPS6240366A (en) | 1985-08-14 | 1985-08-14 | Electron beam vapor deposition device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17915085A JPS6240366A (en) | 1985-08-14 | 1985-08-14 | Electron beam vapor deposition device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6240366A JPS6240366A (en) | 1987-02-21 |
| JPH0322464B2 true JPH0322464B2 (en) | 1991-03-26 |
Family
ID=16060835
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP17915085A Granted JPS6240366A (en) | 1985-08-14 | 1985-08-14 | Electron beam vapor deposition device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6240366A (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2551179Y2 (en) * | 1991-06-27 | 1997-10-22 | 山一電機株式会社 | IC socket |
-
1985
- 1985-08-14 JP JP17915085A patent/JPS6240366A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6240366A (en) | 1987-02-21 |
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