JPH0322414A - Atmospheric pressure vapor deposition device - Google Patents

Abstract

PURPOSE:To introduce inert gas to a middle part of a slit plate, where stagnation is produced, to prevent abnormal deposition of a reaction product by providing a passage for blowing out the inert gas between teeth of the middle part of the slit plate for distributing reaction gas. CONSTITUTION:A first reaction gas 1 and a second reaction gas 2 pass through a separated slit plate 3 so as not to be mixed with each other, and are mixed on the surface of a wafer 4 to form a vapor phase epitaxy film, and the residual reaction gas is drawn by exhaust ducts 5 provided on the opposite sides. On the other hand, inert gas 6 introduced from the middle part of the slit plate 3 is drawn by the exhaust ducts 5 on the opposite sides. In this manner, by providing a passage in the slit plate 3 for introducing the inert gas, it is eliminate that a reaction product deposits on the intermediate part slit and adheres to the wafer located on the opposite position as dust to deteriorate the yield.

Description

[Detailed description of the invention] [Industrial application field] The present invention relates to an atmospheric pressure vapor phase growth apparatus.

[Conventional technology]

The gas introduction mechanism of a conventional atmospheric pressure vapor phase growth apparatus has a structure as shown in FIG. The structure was such that the gases 2 alternately flowed and reacted on the wafer 4, and the reaction residual gas was exhausted through exhaust ducts 5 on both sides.

[Problem to be solved by the invention]

Since the conventional gas introduction mechanism described above has a structure in which the reaction residual gas is drawn through the exhaust ducts 5 on both sides, stagnation occurs in the middle part of the ducts on both sides, and the first reaction gas and the second reaction gas There is a disadvantage that the reaction products with the wafer are deposited in the slit in the middle portion and attached as dust to the wafer in the opposing position, resulting in poor yield.

[Means to solve the problem]

In the present invention, a slit plate having a comb-shaped cross section and a conduction path for ejecting different types of reaction gases from between the teeth of the comb is provided at the inlet of the reaction chamber. In an atmospheric vapor phase growth apparatus in which an exhaust duct for discharging the reacted gas is provided between the slit plate and the wall of the reaction chamber, an inert gas is generated between the teeth in the central part of the slit plate. It is characterized by being provided with a conduit for spouting it.

〔Example〕

FIG. 1 is a schematic cross-sectional view of the main parts of an embodiment of the present invention.

The first reaction gas 1 and the second reaction gas 2 pass through the slit plate 3 which is separated into ridges where they do not mix, and mix on the surface of the wafer 4 to form a vapor-phase growth film, and the reaction residual gas is removed from the slit plate 3. It is drawn into exhaust ducts 5 provided on both sides of 3. On the other hand, the inert gas 6 introduced from the center of the slit plate 3 is drawn to the exhaust ducts 5 on both sides.

Thus, the main feature of the present invention is that the slit plate 3 is provided with a conductive path for introducing inert gas.

〔Effect of the invention〕

As explained above, in the present invention, by introducing inert gas through the slit plates in the middle part of both sides, the inert gas becomes stagnant in the central part of the slit plate, so that reaction products are abnormally deposited. This has the effect that there is nothing to do.

[Brief explanation of drawings]

FIG. 1 is a schematic cross-sectional view of the main parts of an embodiment of the present invention, and FIG.
The figure is a schematic cross-sectional view of a gas introduction portion of a conventional atmospheric pressure vapor phase growth apparatus. 1... First reaction gas, 2... Second reaction gas, 3...
- Slit plate, 4... Wafer, 5... Exhaust duct, 6... Inert gas, 7... Slit plate.

Claims (1)

[Claims] A slit plate with a comb-shaped cross section and a conduit passage provided in the handle of the comb for ejecting different types of reaction gases from between the teeth of the comb is provided at the entrance of the reaction chamber. In a normal pressure vapor phase growth apparatus in which an exhaust duct for discharging reacted gas is provided between the chamber wall and the chamber wall, an inert gas is ejected between the teeth in the central part of the slit plate. A normal pressure vapor phase growth apparatus characterized by being provided with a conductive path.