JPH03223606A - Tunnel-current detecting apparatus - Google Patents

Tunnel-current detecting apparatus

Info

Publication number
JPH03223606A
JPH03223606A JP1852390A JP1852390A JPH03223606A JP H03223606 A JPH03223606 A JP H03223606A JP 1852390 A JP1852390 A JP 1852390A JP 1852390 A JP1852390 A JP 1852390A JP H03223606 A JPH03223606 A JP H03223606A
Authority
JP
Japan
Prior art keywords
probe
tunnel
graphite
current
metal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1852390A
Other languages
Japanese (ja)
Inventor
Kenji Muta
研二 牟田
Ichiro Toyoda
一郎 豊田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Heavy Industries Ltd
Original Assignee
Mitsubishi Heavy Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Heavy Industries Ltd filed Critical Mitsubishi Heavy Industries Ltd
Priority to JP1852390A priority Critical patent/JPH03223606A/en
Publication of JPH03223606A publication Critical patent/JPH03223606A/en
Pending legal-status Critical Current

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  • Measurement Of Length, Angles, Or The Like Using Electric Or Magnetic Means (AREA)

Abstract

PURPOSE:To detect and control a stable tunnel current not only from a semiconductor but also from the surface of a metal sample and to make it possible to observe the image of an atom directly by changing the material of a tunnel- current detecting apparatus from metal to graphite. CONSTITUTION:In an apparatus utilizing the tunnel effects of a scanning type tunnel microscope and the like, a probe supporting substrate 15 is attached in a driving part 16 which can be driven in the horizontal direction and in the vertical direction. A probe 11 made of graphite (e.g. constituted of the components of carbon fiber and the cores of penciles and the like) is attached to the substrate 15. When the material of the probe is changed from metal to the graphite, a stable tunnel current can be detected and controlled not only from a semiconductor but also from the surface of a metal sample. Furthermore, the current can be controlled even in atmosphere. The surface of the thin film of gold in the atmosphere is observed, and the image of the atom can be directly obtained.

Description

【発明の詳細な説明】 (産業上の利用分野) 本発明はトンネル効果を利用する走査型トンネル顕微鏡
等のトンネル電流の検出装置に関する。
DETAILED DESCRIPTION OF THE INVENTION (Industrial Application Field) The present invention relates to a tunneling current detection device such as a scanning tunneling microscope that utilizes the tunneling effect.

(従来の技術) 第2図に従来の装置を示す。(Conventional technology) FIG. 2 shows a conventional device.

走査型トンネル顕微鏡や走査型トンネルスペクトロメー
タ、超粗さ計等においては、物質表面の形状観察や物性
測定等のため、試料表面に探針を5人から50人の距離
に近づけ、適当なバイアス電圧を印加することにより生
ずるトンネル効果を利用する。ここでトンネル効果とは
、探針と試料間の距離、バイアス電圧、及び探針、試料
の電子状態に応じてトンネル電流が流れる物理現象をい
う。
In scanning tunneling microscopes, scanning tunneling spectrometers, ultra-roughness meters, etc., in order to observe the shape of material surfaces and measure physical properties, the probe is brought close to the sample surface at a distance of 5 to 50 people, and an appropriate bias is applied. Utilizes the tunnel effect produced by applying voltage. Here, the tunnel effect refers to a physical phenomenon in which a tunnel current flows depending on the distance between the probe and the sample, the bias voltage, and the electronic states of the probe and the sample.

従来、トンネル電流検出のためのユニットの先端には、
第2図に示すように白金イリジウムやタングステンなど
の金属材料で構成された探針を使用してきた。
Conventionally, at the tip of the unit for tunnel current detection,
As shown in FIG. 2, probes made of metal materials such as platinum iridium and tungsten have been used.

このような装置を使用することにより半導体については
表面からトンネル電流を安定に検出することが可能であ
った。
By using such a device, it was possible to stably detect tunnel current from the surface of a semiconductor.

(発明が解決しようとする:lllff1)しかし前述
した従来の装置では、金属試料表面からのトンネル電流
を検出しようとすると、トンネル電流が安定しない等の
問題がある。そのため金属試料表面からのトンネル電流
を検出し制御することは非常に困難であった。
(To be solved by the invention: lllff1) However, in the conventional apparatus described above, when trying to detect a tunnel current from the surface of a metal sample, there are problems such as that the tunnel current is not stable. Therefore, it has been extremely difficult to detect and control tunneling current from the surface of metal samples.

本発明はこれらの問題を解決する装置を提供することを
目的とする。
The present invention aims to provide a device that solves these problems.

(課題を解決するための手段) 本発明に係るトンネル電流の検出装置は、走査型トンネ
ル顕微鏡等トンネル効果を利用する装置において、水平
方向及び垂直方向に走査できる駆動部16と、前記駆動
部に取付けられた探針支持用基台15と、前記探針支持
用基台に取付けられたグラファイトで作られた探針11
と、前記探針と試料間に適切なバイアス電圧を印加でき
るバイアス電圧用電源12と、前記探針と試料との間を
流れるトンネル電流を検出する電流計13により構成さ
れることを特徴とする。
(Means for Solving the Problems) A tunnel current detection device according to the present invention is a device that utilizes a tunnel effect, such as a scanning tunneling microscope, and includes a drive section 16 that can scan in the horizontal and vertical directions, and a drive section 16 that can scan in the horizontal and vertical directions. An attached probe support base 15 and a probe 11 made of graphite attached to the probe support base 15.
, a bias voltage power supply 12 that can apply an appropriate bias voltage between the probe and the sample, and an ammeter 13 that detects the tunnel current flowing between the probe and the sample. .

(作用) 本発明装置においては、トンオル電流の検出装置の探針
の材料を金属からグラファイトに変える事で、半導体の
みならず金属試料の表面からも安定したトンネル電流を
検出・制御でき、金属試料表面の原子像も直接観察する
ことができる。
(Function) In the device of the present invention, by changing the material of the probe of the tunneling current detection device from metal to graphite, stable tunneling current can be detected and controlled not only from the surface of semiconductors but also from the surface of metal samples. Atomic images on the surface can also be directly observed.

(実施例) 本発明の実施例を第1図及び第3図に示す。(Example) An embodiment of the invention is shown in FIGS. 1 and 3.

第1図は本発明の実施例の構成を示す。第1図に於て1
1は探針であり、グラファイト(例えばカーボン繊維、
えんぴつ等の芯の成分で構成されたものなど)で作られ
ている。12は探針にバイアス電圧を印加するために探
針と電気的に接続された電源であり、15は探針を支持
するための基台である。
FIG. 1 shows the configuration of an embodiment of the present invention. 1 in Figure 1
1 is a probe made of graphite (e.g. carbon fiber,
(such as those composed of the core components of pencils, etc.). 12 is a power source electrically connected to the probe for applying a bias voltage to the probe, and 15 is a base for supporting the probe.

第3図は本発明の実施例に係る装置により、大気中で金
(Au)の薄膜(ガラス状に真空蒸着)を表面観察した
時に得られた原子像を示す。
FIG. 3 shows an atomic image obtained when the surface of a thin film of gold (Au) (vacuum deposited in the form of glass) was observed in the atmosphere using an apparatus according to an embodiment of the present invention.

従来装置では、大気中で観察した例はない。No observations have been made in the atmosphere using conventional equipment.

それは、大気中では、表面に存在する不純物、大気のゆ
らぎ等の影響で、探針を動かす(走査する)場合トンネ
ル電流が過大に流れたり、また、流れなかったりして、
トンネル電流を制御することが出来なかったためである
This is because in the atmosphere, due to the effects of impurities on the surface, atmospheric fluctuations, etc., when moving (scanning) the probe, the tunneling current may or may not flow excessively.
This is because the tunnel current could not be controlled.

本発明装置の探針では、大気中でも電流の制御が可能で
あり、第3図のような像を得ることができた。
With the probe of the device of the present invention, it was possible to control the current even in the atmosphere, and we were able to obtain the image shown in Figure 3.

第4図は、Y、Kuk et al (1988)の論
文に掲載されている “従来のトンネル電流検出装置”
を利用した走査型トンネル顕微fi(STM)によって
得られた、金(Au)の表面原子像である。第4図を見
る限り、本実施例で得られた原子像(第3図)と同程度
に見えるが、第4図は表面処理を加えた後に、超高へ空
(10−” Tarr以ド)という極めて理想に近い条
件下で測定されたものである。
Figure 4 shows the “conventional tunnel current detection device” published in the paper by Y. Kuk et al. (1988).
This is a surface atomic image of gold (Au) obtained by scanning tunneling microscopy (STM) using . As far as we can see in Figure 4, the atomic image obtained in this example (Figure 3) appears to be on the same level as the atomic image obtained in this example (Figure 3). ), which are very close to ideal conditions.

その他の論文等で発表されている金(Au)の表面原子
像も、理想的な条件下で測定されたにもかかわりず、第
4図と同程度の写真しか得られていない。また、本実施
例のように大気中という悪い条件下で測定された原子像
は、発表されていない。
Although the surface atomic images of gold (Au) published in other papers were measured under ideal conditions, the images obtained were only comparable to those shown in Figure 4. Furthermore, atomic images measured under adverse conditions in the atmosphere as in this example have not been published.

本発明を使用した走査型トンネル顕微1!(STM)に
より理想的条件下で測定を行なえばさらに鮮明なAu表
面原子像が得ることができる。
Scanning tunneling microscope using the present invention 1! If measurement is performed under ideal conditions using STM, an even clearer image of Au surface atoms can be obtained.

[発明の効果] 本発明は前述のように構成されているので、以下に記載
するような効果を奏する。
[Effects of the Invention] Since the present invention is configured as described above, it has the following effects.

(1)探針がグラファイトで作られているので、従来は
観察が困難とされていた金属表面からの安定したトンネ
ル電流の検出及び制御を正確に行うことができる。
(1) Since the probe is made of graphite, it is possible to accurately detect and control stable tunneling current from the metal surface, which has been difficult to observe in the past.

(2)  そのため、金属試料表面の原子像も得ること
ができる。
(2) Therefore, an atomic image of the surface of a metal sample can also be obtained.

(3)  半導体についても安定したトンネル電流を正
確に検出・制御することができる。
(3) It is possible to accurately detect and control stable tunnel current even in semiconductors.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は本発明の実施例を示す図、 第2図は従来の装置を示す図、 第3図は本発明装置により、大気中で得られた金(Au
)の表面原子像の写真、 11・・・グラファイトで作られた探針、12゜22・
・・バイアス電圧用電源、13.23・・・電流計、1
4.24・・・試料、15.25・・・探針支持用基台
、16.26・・・x、y、z方向駆動装置、21・・
・金属で作られた探針。
Fig. 1 shows an embodiment of the present invention, Fig. 2 shows a conventional device, and Fig. 3 shows gold (Au) obtained in the atmosphere by the device of the present invention.
) photo of surface atomic image, 11... probe made of graphite, 12°22.
...Bias voltage power supply, 13.23...Ammeter, 1
4.24... Sample, 15.25... Probe support base, 16.26... x, y, z direction drive device, 21...
- A probe made of metal.

Claims (1)

【特許請求の範囲】[Claims] 走査型トンネル顕微鏡等トンネル効果を利用する装置に
おいて、水平方向及び垂直方向に走査できる駆動部16
と、前記駆動部に取付けられた探針支持用基台15と、
前記探針支持用基台に取付けられたグラファイトで作ら
れた探針11と、前記探針と試料間に適切なバイアス電
圧を印加できるバイアス電圧用電源12と、前記探針と
試料との間を流れるトンネル電流を検出する電流計13
により構成されることを特徴とするトンネル電流の検出
装置。
In a device that utilizes a tunnel effect such as a scanning tunneling microscope, a drive unit 16 that can scan in the horizontal and vertical directions.
and a probe support base 15 attached to the drive unit;
A probe 11 made of graphite attached to the probe support base, a bias voltage power source 12 capable of applying an appropriate bias voltage between the probe and the sample, and a gap between the probe and the sample. ammeter 13 that detects the tunnel current flowing through the
A tunnel current detection device comprising:
JP1852390A 1990-01-29 1990-01-29 Tunnel-current detecting apparatus Pending JPH03223606A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1852390A JPH03223606A (en) 1990-01-29 1990-01-29 Tunnel-current detecting apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1852390A JPH03223606A (en) 1990-01-29 1990-01-29 Tunnel-current detecting apparatus

Publications (1)

Publication Number Publication Date
JPH03223606A true JPH03223606A (en) 1991-10-02

Family

ID=11973991

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1852390A Pending JPH03223606A (en) 1990-01-29 1990-01-29 Tunnel-current detecting apparatus

Country Status (1)

Country Link
JP (1) JPH03223606A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5383354A (en) * 1993-12-27 1995-01-24 Motorola, Inc. Process for measuring surface topography using atomic force microscopy

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5383354A (en) * 1993-12-27 1995-01-24 Motorola, Inc. Process for measuring surface topography using atomic force microscopy

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