JPH03219910A - Method for forming thick film - Google Patents
Method for forming thick filmInfo
- Publication number
- JPH03219910A JPH03219910A JP1543190A JP1543190A JPH03219910A JP H03219910 A JPH03219910 A JP H03219910A JP 1543190 A JP1543190 A JP 1543190A JP 1543190 A JP1543190 A JP 1543190A JP H03219910 A JPH03219910 A JP H03219910A
- Authority
- JP
- Japan
- Prior art keywords
- female mold
- thick film
- forming
- ceramic material
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 title claims abstract description 53
- 229910010293 ceramic material Inorganic materials 0.000 claims abstract description 30
- 239000000758 substrate Substances 0.000 claims abstract description 29
- 239000000463 material Substances 0.000 claims abstract description 20
- 239000011521 glass Substances 0.000 claims abstract description 15
- 239000011347 resin Substances 0.000 claims abstract description 15
- 229920005989 resin Polymers 0.000 claims abstract description 15
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 12
- 239000006260 foam Substances 0.000 claims abstract description 6
- 239000000919 ceramic Substances 0.000 claims abstract description 3
- 238000000206 photolithography Methods 0.000 claims description 3
- 238000010304 firing Methods 0.000 abstract description 10
- 239000000126 substance Substances 0.000 abstract description 2
- 238000010586 diagram Methods 0.000 description 7
- 238000007650 screen-printing Methods 0.000 description 6
- 239000011230 binding agent Substances 0.000 description 3
- 238000001035 drying Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000000178 monomer Substances 0.000 description 3
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000003475 lamination Methods 0.000 description 2
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 2
- 229910052753 mercury Inorganic materials 0.000 description 2
- YDKNBNOOCSNPNS-UHFFFAOYSA-N methyl 1,3-benzoxazole-2-carboxylate Chemical compound C1=CC=C2OC(C(=O)OC)=NC2=C1 YDKNBNOOCSNPNS-UHFFFAOYSA-N 0.000 description 2
- 238000007639 printing Methods 0.000 description 2
- 229920002818 (Hydroxyethyl)methacrylate Polymers 0.000 description 1
- 239000012956 1-hydroxycyclohexylphenyl-ketone Substances 0.000 description 1
- OMIGHNLMNHATMP-UHFFFAOYSA-N 2-hydroxyethyl prop-2-enoate Chemical compound OCCOC(=O)C=C OMIGHNLMNHATMP-UHFFFAOYSA-N 0.000 description 1
- RDFQSFOGKVZWKF-UHFFFAOYSA-N 3-hydroxy-2,2-dimethylpropanoic acid Chemical compound OCC(C)(C)C(O)=O RDFQSFOGKVZWKF-UHFFFAOYSA-N 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-M Acrylate Chemical compound [O-]C(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 description 1
- 229910001369 Brass Inorganic materials 0.000 description 1
- WOBHKFSMXKNTIM-UHFFFAOYSA-N Hydroxyethyl methacrylate Chemical compound CC(=C)C(=O)OCCO WOBHKFSMXKNTIM-UHFFFAOYSA-N 0.000 description 1
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 description 1
- DAKWPKUUDNSNPN-UHFFFAOYSA-N Trimethylolpropane triacrylate Chemical compound C=CC(=O)OCC(CC)(COC(=O)C=C)COC(=O)C=C DAKWPKUUDNSNPN-UHFFFAOYSA-N 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- MQDJYUACMFCOFT-UHFFFAOYSA-N bis[2-(1-hydroxycyclohexyl)phenyl]methanone Chemical compound C=1C=CC=C(C(=O)C=2C(=CC=CC=2)C2(O)CCCCC2)C=1C1(O)CCCCC1 MQDJYUACMFCOFT-UHFFFAOYSA-N 0.000 description 1
- 239000010951 brass Substances 0.000 description 1
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 239000000839 emulsion Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 150000002148 esters Chemical class 0.000 description 1
- UHESRSKEBRADOO-UHFFFAOYSA-N ethyl carbamate;prop-2-enoic acid Chemical compound OC(=O)C=C.CCOC(N)=O UHESRSKEBRADOO-UHFFFAOYSA-N 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 238000005429 filling process Methods 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000000049 pigment Substances 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- KCTAWXVAICEBSD-UHFFFAOYSA-N prop-2-enoyloxy prop-2-eneperoxoate Chemical compound C=CC(=O)OOOC(=O)C=C KCTAWXVAICEBSD-UHFFFAOYSA-N 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
Abstract
Description
【発明の詳細な説明】
［産業上の利用分野］
本発明は、液晶表示装置、蛍光表示管デイスプレィパネ
ル、プラズマデイスプレィパネル、混成集積回路等の製
造工程における厚膜パターン形成方法に関するものであ
る。[Detailed Description of the Invention] [Industrial Application Field] The present invention relates to a thick film pattern forming method in the manufacturing process of liquid crystal display devices, fluorescent display tube display panels, plasma display panels, hybrid integrated circuits, etc. be.
［従来の技術］
従来、この種の厚膜パターン形成方法としては、ガラス
やセラミックス基板上に導体或いは絶縁体用のペースト
をスクリーン印刷によりパターン状に印刷を行った後に
このペーストを乾燥、焼成する工程を繰り返して厚膜パ
ターンを形成する方法が知られている。また、最近ガラ
ス等の基板の上にセラミック材料で厚膜パターンを形成
することが種々の分野で行われてきているが、この場合
にも、セラミック材料をバインダー中に分散させてペー
スト状としたものを用い、前記したのと同様にして、ス
クリーン印刷により重ね印刷を行った後に乾燥、焼成す
る工程を繰り返すことにより厚膜パターンを形成するよ
うにしている。[Prior Art] Conventionally, this type of thick film pattern forming method involves printing a conductor or insulator paste in a pattern on a glass or ceramic substrate by screen printing, and then drying and baking the paste. A method of forming a thick film pattern by repeating steps is known. Also, recently, forming thick film patterns with ceramic materials on substrates such as glass has been carried out in various fields, but in this case too, the ceramic material is dispersed in a binder and made into a paste. A thick film pattern is formed by repeating the steps of overprinting by screen printing, drying, and baking in the same manner as described above.
［発明が解決しようとする課題］
従来のスクリーン印刷によりガラス基板上にセラミック
材料による厚膜パターンを形成する方法においては、上
述のように複数回のスクリーン印刷により重ね刷りをし
て所定の厚さにする必要があるが、この方法では例えば
５０〜１００μｍの厚膜を得るために５〜１０回の重ね
刷りを必要とし、そのたびごとに乾燥工程が入ることと
なり、その結果として極めて生産性が悪く歩留りを低下
させるという問題点があった。さらに、ペーストの粘度
、チクソトロピー等によりパターンの線幅精度が損なわ
れるという問題点もあった。[Problems to be Solved by the Invention] In the conventional method of forming a thick film pattern of ceramic material on a glass substrate by screen printing, as described above, overprinting is performed by multiple times of screen printing to obtain a predetermined thickness. However, this method requires overprinting 5 to 10 times to obtain a thick film of, for example, 50 to 100 μm, and a drying step is required each time, resulting in extremely low productivity. There was a problem in that the yield was deteriorated. Furthermore, there is also the problem that the line width accuracy of the pattern is impaired due to the viscosity of the paste, thixotropy, etc.
本発明は、このような従来技術の問題点を解消するため
に創案されたものであり、生産性を改善し歩留りを向上
させ、かつ良好な線幅精度を得るこきのできる厚膜パタ
ーン形成方法を提供することを目的としている。The present invention was devised to solve the problems of the prior art, and provides a thick film pattern forming method that can improve productivity, increase yield, and obtain good line width accuracy. is intended to provide.
［課題を解決するだめの手段］
上記目的を達成するために、本発明の厚膜パターン形成
方法は、ガラス等の基板の上にセラミック材料で厚膜パ
ターンを形成する方法において、前記基板上に予め前記
セラミック以外の材料で目的パターンの雌型を形成して
おき、該雌型により得られた空間に前記セラミック材料
を充填した後、前記雌型を消失せしめることにより前記
セラミック材料による目的パターンを得ることを特徴と
するものである。[Means for Solving the Problems] In order to achieve the above object, the thick film pattern forming method of the present invention includes a method for forming a thick film pattern using a ceramic material on a substrate such as glass. A female mold of the desired pattern is formed in advance from a material other than the ceramic material, and the space obtained by the female mold is filled with the ceramic material, and then the female mold is made to disappear, thereby forming the desired pattern of the ceramic material. It is characterized by obtaining.
そして、このような厚膜パターン形成方法にあっては、
雌型を形成する材料としてフォトレジストを用いてフォ
トリソグラフィーにより雌型を得るようにしてもよいし
、或いは、雌型を形成する材料として紫外線硬化性樹脂
を用いて２Ｐ法により前記雌型を得るようにしてもよく
、また、雌型を形成する材料として有機発泡体を用いる
ようにしてもよいものである。In such a thick film pattern forming method,
The female mold may be obtained by photolithography using a photoresist as the material for forming the female mold, or the female mold may be obtained by a 2P method using an ultraviolet curable resin as the material for forming the female mold. Alternatively, an organic foam may be used as the material for forming the female mold.
［作用］ 図面を用いて本発明の詳細な説明する。[Effect] The present invention will be explained in detail using the drawings.
第１図（ａ）に示すように、ガラス等の基板１の上にフ
ォトレジスト等の材料を用いることにより目的パターン
の雌型２を形成する。しかる後、第１図（ｂ）に示すよ
うに、雌型２により得られた空間にセラミック材料３を
充填し、続いて第１図（Ｃ）に示すように、薬品処理或
いは焼成等の手段により雌型２を消失せしめてセラミッ
ク材料３で構成された所望のパターンを得る。As shown in FIG. 1(a), a female mold 2 having a desired pattern is formed on a substrate 1 made of glass or the like using a material such as a photoresist. Thereafter, as shown in FIG. 1(b), the space obtained by the female mold 2 is filled with ceramic material 3, and then, as shown in FIG. 1(C), a chemical treatment or firing method is applied. The female mold 2 is made to disappear by this process, and the desired pattern made of the ceramic material 3 is obtained.
し実施例］ 以下、実施例を挙げて本発明を具体的に説明する。Examples] The present invention will be specifically described below with reference to Examples.
〈実施例１〉
第２図（ａ）〜（ｅ）は本発明の厚膜パターン形成方法
において、雌型を形成する材料としてフォトレジストを
用いた場合の工程図であり、それぞれ第２図（ａ）は基
板上にフォトレジスト層を形成する工程、第２図（５）
はパターン露光工程、第２図（Ｃ）は現像工程、第２図
（６）はセラミック材料を充填する工程、第２図（ｅ）
は焼成工程を示している。<Example 1> Figures 2(a) to 2(e) are process diagrams when photoresist is used as the material for forming the female mold in the thick film pattern forming method of the present invention. a) is the step of forming a photoresist layer on the substrate, Figure 2 (5)
2(C) is the developing process, FIG. 2(6) is the process of filling the ceramic material, and FIG. 2(e) is the pattern exposure process.
indicates the firing process.
使用するフォトレジストとしては、エレクトロニクス分
野で用いられているものでもよいが、厚膜を容易に形成
するた袷に、本実施例では写真製版等で使用されている
ドライフィルム（東京応化工業＠製＾Ｂ−２５０）を用
いた。しかしながら、この選択は本発明を限定するもの
ではなく、目的とするパターン寸法に応じて適切なフォ
トレジストを適宜選択すればよいものである。The photoresist used may be one used in the electronics field, but in this example, a dry film (manufactured by Tokyo Ohka Kogyo @ ^B-250) was used. However, this selection does not limit the present invention, and an appropriate photoresist may be appropriately selected depending on the intended pattern dimensions.
以下に順を追って各工程を説明する。まず、第２図（ａ
）に示すように、ガラス基板１１の上にフォトレジスト
１４としてのドライフィルムを加熱ラミネート法で４層
積層し厚みを２００μｍとした。その後、第２図（ｂ）
に示すように、超高圧水銀灯を光源とする平行光プリン
ターを用い、線幅１００μｍ１ピツチ３００μｍのライ
ンパターンマスク１５を介してパターン露光を行った。Each step will be explained below in order. First, Figure 2 (a
), four dry films as photoresists 14 were laminated on a glass substrate 11 by a heating lamination method to a thickness of 200 μm. After that, Fig. 2(b)
As shown in FIG. 2, pattern exposure was performed using a parallel light printer using an ultra-high pressure mercury lamp as a light source through a line pattern mask 15 with a line width of 100 μm and a pitch of 300 μm.
露光条件は波長３６５ｎｍで測定した時に、強度２００
ＪＪＷ／ ｃＩｌｌ。The exposure conditions were an intensity of 200 when measured at a wavelength of 365 nm.
JJW/cIll.
照射量７２ ｍ Ｊ ／ｃｒｌである。続いて、第２図
（Ｃ）に示す現像工程では、無水炭酸ナトリウム１ｗｔ
％水溶液により液温３０〜５０℃でスプレー現像を行い
、現像終了点は目視にて確認した。以上の工程により線
幅２００μｍ、ピッチ３００μｍ、高さ１５０μｍの雌
型１２を得た。そして、続いて行った第２図（山のセラ
ミック材料の充填工程では、セラミック材料１３として
、低融点ガラスフリット、耐熱顔料、充填剤を有機バイ
ンダー中に分散させたペースト状のものを用い、平板ゴ
ム１６を雌型１２に接しさせながらパターンを斜めに横
切るように移動させてペースト状のセラミック材料１３
を充填するとともに、雌型１２からはみ出した余分なも
のを掻き取るようにした。このようにして得られた基板
１１はペースト中の有機バインダーに含まれる溶剤を除
去するため８０〜１２０℃で乾燥を行って次の焼成工程
へ供した。なお、このペースト充填工程は、必要ならば
複数回繰り返してもよいものである。第２図（ｅ）に示
す焼成工程では、ピーク温度５８５℃、保存時間１０〜
２０分の条件で焼成を行い、フォトレジストで形成され
た雌型１２を消失せし狛るとともに、前記セラミック材
料１３をガラス基板１１上で結着させた。以上の工程に
より、線幅１００〜２００μｍ、ピッチ３００μｍ、高
さ１５０μｍのセラミック材料１３からなる厚膜パター
ンを得た。The irradiation amount was 72 mJ/crl. Subsequently, in the development step shown in FIG. 2(C), 1 wt of anhydrous sodium carbonate was added.
% aqueous solution at a liquid temperature of 30 to 50° C., and the end point of development was visually confirmed. Through the above steps, a female mold 12 having a line width of 200 μm, a pitch of 300 μm, and a height of 150 μm was obtained. In the subsequent ceramic material filling process shown in Figure 2 (Yamayama), a paste-like material in which low-melting point glass frit, heat-resistant pigment, and filler were dispersed in an organic binder was used as the ceramic material 13. The paste-like ceramic material 13 is made by moving the rubber 16 diagonally across the pattern while keeping it in contact with the female mold 12.
At the same time, the excess material protruding from the female mold 12 was scraped off. The substrate 11 thus obtained was dried at 80 to 120°C to remove the solvent contained in the organic binder in the paste, and then subjected to the next firing process. Note that this paste filling step may be repeated multiple times if necessary. In the firing process shown in Figure 2(e), the peak temperature was 585°C and the storage time was 10~
Firing was carried out for 20 minutes, and the female mold 12 made of photoresist disappeared and remained, and the ceramic material 13 was bonded on the glass substrate 11. Through the above steps, a thick film pattern made of the ceramic material 13 having a line width of 100 to 200 μm, a pitch of 300 μm, and a height of 150 μm was obtained.
〈実施例２〉
第３図（ａ）〜（Ｃ）は本発明の厚膜パターン形成方法
において、雌型を形成する材料として紫外線硬化樹脂を
用いた場合の工程図であり、第３図（ａ）は２Ｐ （Ｐ
ｈｏｔｏｐｏｌｙｍａｒｉｚａｔｉｏｎ ）法による型
取り工程、第３図ら）はセラミック材料を充填する工程
、第３図（Ｃ）は焼成工程をそれぞれ示している。<Example 2> FIGS. 3(a) to 3(C) are process diagrams when an ultraviolet curing resin is used as the material for forming the female mold in the thick film pattern forming method of the present invention. a) is 2P (P
FIG. 3(C) shows a mold-making step using the photopolymerization method, FIG. 3(C) shows a step of filling a ceramic material, and FIG. 3(C) shows a firing step.
また、第４図（ａ）〜（Ｃ）は上記の２Ｐ法を説明する
だめの工程図であり、それぞれ第４図（ａ）は紫外線硬
化性樹脂を介しての原版と基板との密着工程、第４図ら
）は紫外線照射工程、第４図（Ｃ）は剥離工程を示すも
のである。In addition, FIGS. 4(a) to (C) are process diagrams for explaining the above-mentioned 2P method, and FIG. 4(a) shows the process of adhering the original plate and the substrate through an ultraviolet curable resin. , FIG. 4, etc.) show the ultraviolet irradiation step, and FIG. 4(C) shows the peeling step.
第４図（ａ）〜（Ｃ）の工程において、本実施例では、
原版２７として市販の真鍮板に線幅２００μｍ１ピッチ
３００μｍ１深さ１５０μｍの溝を切削加工したものを
用い、基板２１としてガラス板を用いた。In the steps of FIGS. 4(a) to (C), in this example,
As the original plate 27, a commercially available brass plate was used, in which grooves with a line width of 200 μm, a pitch of 300 μm, and a depth of 150 μm were cut, and as the substrate 21, a glass plate was used.
これらの原版２７と基板２１は第４図ら）に示す紫外線
照射工程のため、少なくとも一方が透明でなければなら
ないものである。次に、紫外線硬化性樹脂２８としては
、ヒドロキシエチルアクリレート、ヒドロキシエチルメ
タクリレート、ネオペンチルグリコールジアクリレート
、トリメチロールプロパントリアクリレート等のアクリ
ル系モノマー、エポキシアクリレート、ポリエステルア
クリレート、ウレタンアクリレート等のアクリル系オリ
ゴマー或いは前記モノマーとオリゴマーの混合物等が考
えられるが、本実施例ではヒドロキシピバリン酸エステ
ルネオペンチルグリコールジアクリレートを用いた。ま
た、光開始剤としては、市販試薬の範囲内で広く考えら
れるが、本実施例では１−ヒドロキシシクロへキシルフ
ェニルケトンを用いた。At least one of the original plate 27 and the substrate 21 must be transparent because of the ultraviolet irradiation process shown in FIG. Next, as the ultraviolet curable resin 28, acrylic monomers such as hydroxyethyl acrylate, hydroxyethyl methacrylate, neopentyl glycol diacrylate, trimethylolpropane triacrylate, acrylic oligomers such as epoxy acrylate, polyester acrylate, urethane acrylate, etc. A mixture of the above-mentioned monomers and oligomers can be considered, but in this example, hydroxypivalic acid ester neopentyl glycol diacrylate was used. Furthermore, although a wide range of commercially available reagents can be used as the photoinitiator, 1-hydroxycyclohexylphenyl ketone was used in this example.
紫外線硬化性樹脂２８として前記のモノマー、オリゴマ
ーのどれを選択するかは本発明を限定するものではない
が、第３図（Ｃ）に示した焼成工程にて消失しやすいも
のが好ましい。また、前記紫外線硬化性樹脂２８が単独
で基板２１上に密着しない場合には適宜ブライマーを用
いるようにしてもよいものである。Although the invention is not limited to which one of the above-mentioned monomers and oligomers is selected as the ultraviolet curable resin 28, it is preferable to use one that easily disappears in the firing process shown in FIG. 3(C). Furthermore, if the ultraviolet curable resin 28 does not adhere to the substrate 21 by itself, a brimer may be used as appropriate.
以下、第４図（ａ）〜（Ｃ）の各工程を順に説明する。Hereinafter, each process of FIGS. 4(a) to 4(C) will be explained in order.
まず、第４図（ａ）に示すように、紫外線硬化性樹脂２
８を介してガラス基板２１と原版２７とを平板プレス或
いはラミネートロールで密着させ、次いで、第４図面に
示すように、ガラス基板２１側から紫外線を照射して紫
外線硬化性樹脂２８を硬化せしめた。First, as shown in FIG. 4(a), an ultraviolet curable resin 2
The glass substrate 21 and the original plate 27 were brought into close contact with each other via the glass substrate 8 using a flat plate press or a laminating roll, and then, as shown in the fourth drawing, ultraviolet rays were irradiated from the glass substrate 21 side to harden the ultraviolet curable resin 28. .
なお、紫外線源としては、高圧水銀灯（４０ｗ／ｃｍ）
を用い、約１０００ｍＪ／ｃｎ！照射した。しかる後、
第４図（Ｃ）に示すように、原版２７を紫外線硬化性樹
脂２８との界面より剥離することにより、ガラス基板２
１上に線幅２００μｍ、ピッチ３００μｍ１高さ１５０
μｍの紫外線硬化性樹脂２８からなる雌型２２を作成し
た。In addition, as a source of ultraviolet rays, a high pressure mercury lamp (40w/cm) is used.
Approximately 1000mJ/cn! Irradiated. After that,
As shown in FIG. 4(C), by peeling the original plate 27 from the interface with the ultraviolet curable resin 28, the glass substrate 2
1, line width 200 μm, pitch 300 μm 1 height 150
A female mold 22 made of a μm ultraviolet curable resin 28 was created.
以上のようにして第３図［ａ）に示す雌型２２の形成さ
れた基板２１が得られた。続いて、実施例１と同様に、
第３図（ｂ）に示すセラミック材料２３を充填する工程
、第３図（Ｃ）に示す焼成工程を経て、線幅１００μｍ
、ピッチ３００μｍ１高さ１５０μｍのセラミック材料
２３による厚膜パターンを得た。In the manner described above, a substrate 21 on which a female mold 22 was formed as shown in FIG. 3(a) was obtained. Subsequently, similarly to Example 1,
Through the step of filling the ceramic material 23 shown in FIG. 3(b) and the firing step shown in FIG. 3(C), the line width is 100 μm.
A thick film pattern of the ceramic material 23 with a pitch of 300 μm and a height of 150 μm was obtained.
〈実施例３〉
次に、本発明の厚膜パターン形成方法において、雌型を
形成する材料として有機発泡体を用いた実施例について
説明する。<Example 3> Next, an example in which an organic foam is used as the material for forming the female mold in the thick film pattern forming method of the present invention will be described.
第５図（ａ）は、雌型３２を形成した基板３１の断面を
示しており、本実施例では、ガラス基板３１上に市販の
スクリーン印刷用発泡インキを用いて、線幅４０μｍ１
ピッチ３００μｍ１高さ３０μｍのラインパターンを印
刷し、その後１３０℃／１０分の熱処理を行うことによ
って、線幅２００μｍ１ピツチ３００μｍ、高さ１５０
μｍの雌型３２を形成した。なお、スクリーン印刷版に
は＃３２５ステンレスメッシ・ユ、乳剤厚３０μｍのも
のを用いた。FIG. 5(a) shows a cross section of the substrate 31 on which the female mold 32 is formed, and in this example, a line width of 40 μm 1
By printing a line pattern with a pitch of 300 μm and a height of 30 μm, and then heat treatment at 130°C for 10 minutes, a line pattern with a line width of 200 μm, a pitch of 300 μm, and a height of 150 μm is printed.
A female mold 32 of μm was formed. The screen printing plate used was #325 stainless steel mesh with an emulsion thickness of 30 μm.
このようにして有機発泡体からなる雌型３２の形成され
た基板３１に対し、以下実施例１及び２と同様に、セラ
ミック材料３３を充填する工程、焼成工程を経て、線幅
１００μｍ、ピッチ３００μｍ１高さ１５０μｍのセラ
ミック材料３３による厚膜パターンを得た。The substrate 31 on which the female mold 32 made of organic foam was formed in this way was then subjected to a step of filling the ceramic material 33 and a firing step in the same manner as in Examples 1 and 2, and then the line width was 100 μm and the pitch was 300 μm. A thick film pattern of ceramic material 33 with a height of 150 μm was obtained.
［発明の効果］
本発明は、上述のとおり構成されているので次に記載す
る効果を奏する。[Effects of the Invention] Since the present invention is configured as described above, it produces the following effects.
一回の操作で高さ１００μｍ以上のパターンが得られる
ため、これまでのスクリーン印刷による積層等に比べ、
処理時間が短縮されるとともに、位置合わせ等の操作も
一回でよいため、工程の簡略化を図ることができる。Because a pattern with a height of 100 μm or more can be obtained in a single operation, compared to conventional screen printing lamination, etc.
Processing time is shortened, and operations such as alignment only need to be performed once, so the process can be simplified.
また、フォトリソグラフィー技術を応用した場合におい
ては、ファインパターンへの対応が可能となる。Furthermore, when photolithography technology is applied, it becomes possible to handle fine patterns.
第１図は本発明の厚膜パターン形成方法を説明するため
の工程図、第２図（ａ）〜（ｄ）は本発明の厚膜パター
ン形成方法において雌型を形成する材料としてフォトレ
ジストを用いた場合の工程図、第３図（ａ）〜（Ｃ）は
本発明の厚膜パターン形成方法において雌型を形成する
材料として紫外線硬化樹脂を用いた場合の工程図、第４
図（ａ）〜（Ｃ）は紫外線硬化樹脂を用いた場合の２Ｐ
法を説明するための工程図、第５図（ａ）、 （ｂ）は
本発明の厚膜パターン形成方法において雌型を形成する
材料として有機発泡体を用いた場合の工程を簡略化して
示した工程図である。
１・・・基板、２・・・雌型、３・・・セラミック材料
、１１・・基板、１２・・・雌型、１３・・・セラミッ
ク材料、１４・・・フォトレジスト、１５・・・ライン
パターンマスク、１６・・・平板ゴム、２１・・・基板
、２２・・・雌型、２３・・セラミック材料、２７・・
・原版、２８・・紫外線硬化性樹脂、３１・・・基板、
３２・・・雌型、３３・・・セラミック材料第１図Fig. 1 is a process diagram for explaining the thick film pattern forming method of the present invention, and Figs. 2 (a) to (d) show photoresist as a material for forming a female die in the thick film pattern forming method of the present invention. Figures 3 (a) to (C) are process diagrams for the case where ultraviolet curable resin is used as the material for forming the female mold in the thick film pattern forming method of the present invention, and Figure 4
Figures (a) to (C) show 2P when using ultraviolet curing resin.
Figures 5(a) and 5(b), which are process diagrams for explaining the method, show simplified steps when an organic foam is used as the material for forming the female mold in the thick film pattern forming method of the present invention. This is a process diagram. DESCRIPTION OF SYMBOLS 1... Substrate, 2... Female mold, 3... Ceramic material, 11... Substrate, 12... Female mold, 13... Ceramic material, 14... Photoresist, 15... Line pattern mask, 16... Flat rubber, 21... Substrate, 22... Female mold, 23... Ceramic material, 27...
・Original plate, 28... Ultraviolet curable resin, 31... Substrate,
32...Female mold, 33...Ceramic material Figure 1
Claims (4)
ーンを形成する方法において、前記基板上に予め前記セ
ラミック以外の材料で目的パターンの雌型を形成してお
き、該雌型により得られた空間に前記セラミック材料を
充填した後、前記雌型を消失せしめることにより前記セ
ラミック材料による目的パターンを得ることを特徴とす
る厚膜パターン形成方法。(1) In a method of forming a thick film pattern using a ceramic material on a substrate such as glass, a female mold of the desired pattern is formed on the substrate in advance from a material other than the ceramic, and the pattern obtained by the female mold is formed on the substrate in advance. A method for forming a thick film pattern, characterized in that, after filling a space with the ceramic material, the female mold is made to disappear to obtain a desired pattern using the ceramic material.
雌型を形成する材料としてフォトレジストを用い、フォ
トリソグラフィーにより前記雌型を得ることを特徴とす
る厚膜パターン形成方法。(2) In the thick film pattern forming method according to claim 1,
A method for forming a thick film pattern, characterized in that a photoresist is used as a material for forming a female mold, and the female mold is obtained by photolithography.
雌型を形成する材料として紫外線硬化性樹脂を用い、２
Ｐ法により前記雌型を得ることを特徴とする厚膜パター
ン形成方法。(3) In the thick film pattern forming method according to claim 1,
Using ultraviolet curable resin as the material for forming the female mold, 2
A method for forming a thick film pattern, characterized in that the female mold is obtained by the P method.
雌型を形成する材料として有機発泡体を用いたことを特
徴とする厚膜パターン形成方法。(4) In the thick film pattern forming method according to claim 1,
A thick film pattern forming method characterized in that an organic foam is used as a material for forming a female mold.
Priority Applications (7)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1543190A JP2862092B2 (en) | 1990-01-25 | 1990-01-25 | Thick film pattern forming method |
| US07/762,008 US5580511A (en) | 1990-01-25 | 1991-01-25 | Method of forming thick film pattern and material for forming thick film pattern |
| DE69132442T DE69132442T2 (en) | 1990-01-25 | 1991-01-25 | METHOD AND MATERIAL FOR FORMING TEXTURED THICK FILM-LIKE PATTERNS |
| PCT/JP1991/000080 WO1991011307A1 (en) | 1990-01-25 | 1991-01-25 | Method of and material for forming thick filmy pattern |
| EP91902780A EP0464224B1 (en) | 1990-01-25 | 1991-01-25 | Method of and material for forming thick filmy pattern |
| US08/694,025 US5814267A (en) | 1990-01-25 | 1996-08-08 | Method of forming thick film pattern and material for forming thick film pattern |
| US09/100,974 US6113836A (en) | 1990-01-25 | 1998-06-22 | Method of forming thick film pattern and material for forming thick film pattern |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1543190A JP2862092B2 (en) | 1990-01-25 | 1990-01-25 | Thick film pattern forming method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH03219910A true JPH03219910A (en) | 1991-09-27 |
| JP2862092B2 JP2862092B2 (en) | 1999-02-24 |
Family
ID=11888599
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1543190A Expired - Fee Related JP2862092B2 (en) | 1990-01-25 | 1990-01-25 | Thick film pattern forming method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2862092B2 (en) |
-
1990
- 1990-01-25 JP JP1543190A patent/JP2862092B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JP2862092B2 (en) | 1999-02-24 |
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