JPH03214764A - Manufacture of semiconductor chip - Google Patents

Manufacture of semiconductor chip

Info

Publication number
JPH03214764A
JPH03214764A JP2011142A JP1114290A JPH03214764A JP H03214764 A JPH03214764 A JP H03214764A JP 2011142 A JP2011142 A JP 2011142A JP 1114290 A JP1114290 A JP 1114290A JP H03214764 A JPH03214764 A JP H03214764A
Authority
JP
Japan
Prior art keywords
chip
functional blocks
semiconductor chip
memory
adjacent
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2011142A
Other languages
Japanese (ja)
Inventor
Mikiro Okada
岡田 幹郎
Kazunori Nakahara
中原 一則
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP2011142A priority Critical patent/JPH03214764A/en
Publication of JPH03214764A publication Critical patent/JPH03214764A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To improve yield of a semiconductor chip by forming a plurality of functional blocks adjacent to a same wafer, sorting out the pass blocks from fail blocks, and dicing a plurality of pass and adjacent blocks as one chip. CONSTITUTION:Upper memory chip rows 20a having a plurality of upper memory chips A on a wafer 10 and lower memory chip rows 20b having a plurality of lower memory chips B are alternately formed. Accordingly, the laterally adjacent one of an arbitrary memory chip becomes a different memory chip. In this case, bonding pads 30 of the chip A to the chip B is formed only along upper and lower sides, and bonding pads are set at the same position in the same row. Then, the chips A, B are sorted to pass and fail ones. A plurality of pass and adjacent functional blocks are diced as one semiconductor chip 100. Thus, the yield of the chip 100 can be improved.

Description

【発明の詳細な説明】 〈産業上の利用分野〉 本発明は、複数種類の機能ブロックからなる比較的サイ
ズの大きな半導体チップの歩留りを向上させる半導体チ
ップの製造方法に関する。
DETAILED DESCRIPTION OF THE INVENTION <Industrial Application Field> The present invention relates to a method for manufacturing a semiconductor chip that improves the yield of a relatively large semiconductor chip composed of a plurality of types of functional blocks.

〈従来の技術〉 以下、半導体チップの例としてマスクROMを挙げて説
明を行う。
<Prior Art> A mask ROM will be described below as an example of a semiconductor chip.

製造工程中に所定の記憶情報が書き込まれるマスクRO
Mのメモリアレイは、上位アドレスに属する上位メモリ
アレイと下位アドレスに属する下位メモリアレイとに大
別することができる。
Mask RO into which predetermined storage information is written during the manufacturing process
The M memory arrays can be roughly divided into an upper memory array belonging to an upper address and a lower memory array belonging to a lower address.

そして、両メモリアレイとも良品であるもののみがマス
クROMとして製品化される。
Only those memory arrays that are of good quality are commercialized as mask ROMs.

〈発明が解決しようとする課題〉 しかしながら、上述した従来のマスクROMには以下の
ような問題点がある。
<Problems to be Solved by the Invention> However, the conventional mask ROM described above has the following problems.

すなわち、マスクROMの面積の大部分は高密度のメモ
リアレイで占有されている。従って、マスクROMの不
良欠陥の大部分は、メモリアレイに生じる。すなわち、
上位又は下位の一方のメモリアレイに不良欠陥があれば
他方のメモリアレイが良品であっても、マスクROMと
しては不良品になるのである。
That is, most of the area of the mask ROM is occupied by a high-density memory array. Therefore, most of the defects in mask ROMs occur in the memory array. That is,
If either the upper or lower memory array has a defect, the mask ROM will be defective even if the other memory array is good.

良品、不良品の組み合わせは、■両メモリアレイとも良
品、■上位メモリアレイのみが良品、■下位メモリアレ
イのみが良品、■両メモリアレイとも不良品の4つがあ
り、■の場合のみマスクROMを得ることができる。従
って、歩留りの向上には一定の限界があった。
There are four combinations of good and defective products: ■ Both memory arrays are good, ■ Only the upper memory array is good, ■ Only the lower memory array is good, and ■ Both memory arrays are defective. Obtainable. Therefore, there is a certain limit to the improvement in yield.

本発明は上記事情に鑑みて創案されたもので、複数の機
能ブロックから構成される半導体チップの歩留りの向上
に貢献する半導体チップの製造方法を提供することを目
的としている。
The present invention was devised in view of the above circumstances, and an object of the present invention is to provide a method for manufacturing a semiconductor chip that contributes to improving the yield of semiconductor chips composed of a plurality of functional blocks.

〈課題を解決するための手段〉 本発明に係る半導体チップの製造方法は、複数の機能ブ
ロックからなる半導体チップの製造方法であって、複数
の機能ブロックを同一ウェハに隣接して形成する工程と
、前記機能ブロックを良品と不良品とに選別する工程と
、良品かつ隣接する複数の機能ブロックを1つの半導体
チップとしてグイシングする工程とを有している。
<Means for Solving the Problems> A method for manufacturing a semiconductor chip according to the present invention is a method for manufacturing a semiconductor chip consisting of a plurality of functional blocks, and includes a step of forming a plurality of functional blocks adjacent to each other on the same wafer. , a step of sorting the functional blocks into non-defective products and defective products, and a step of icing a plurality of non-defective and adjacent functional blocks as one semiconductor chip.

〈作用〉 良品の機能ブロックのうち隣接する機能ブロック同士を
1糺七して、1つの半導体チップを形成する。
<Operation> Adjacent functional blocks among good functional blocks are glued together to form one semiconductor chip.

く実施例〉 以下、図面を参照して本発明に係る一実施例を説明する
Embodiment> Hereinafter, an embodiment of the present invention will be described with reference to the drawings.

第1回は本発明の一実施例を示す説明図、第2図は他の
実施例を示す説明図である。
The first part is an explanatory diagram showing one embodiment of the present invention, and the second part is an explanatory diagram showing another embodiment.

本実施例に係る半導体チップの製造方法は、上位アドレ
スに属する上位メモリチップAと、下位アドレスに属す
る下位メモリチップBとの2つの機能ブロックから構成
されるマスクROMチンブ100の製造方法である。
The method of manufacturing a semiconductor chip according to this embodiment is a method of manufacturing a mask ROM chip 100 that is composed of two functional blocks: an upper memory chip A belonging to an upper address and a lower memory chip B belonging to a lower address.

この製造方法を順を追って説明する。This manufacturing method will be explained step by step.

第1図に示すように、ウェハ10の」一に複数個の上位
メモリチップAからなる上位メモリチノプ列20aと、
複数個の下位メモリチップBからなる下位メモリチップ
列20bとを交互に形成する。従って、任意のメモリチ
ップの横隣は異なるメモリチップになる。なお、上位メ
モリチップAと下位ノモリチップBとのポンディングパ
ッF’30は、上下2辺に沿ってのみ形成されており、
当該ボンディングパッドは上位メモリチップA、下部メ
モリヂップBを問わず、同一位置、同一配列に設定され
ている。また、上下メモリチップA,Bはそれぞれチッ
プ選択端子を有しており、当該チップ選択端子では記憶
情報を書き込む際にハイ又はローのアクティブレベルの
設定ができるようになっている。
As shown in FIG. 1, an upper memory chip row 20a consisting of a plurality of upper memory chips A on each wafer 10;
Lower memory chip rows 20b each consisting of a plurality of lower memory chips B are alternately formed. Therefore, the horizontal neighbors of any given memory chip are different memory chips. Note that the bonding pads F'30 between the upper memory chip A and the lower memory chip B are formed only along the upper and lower two sides;
The bonding pads are set at the same position and in the same arrangement regardless of whether the upper memory chip A or the lower memory chip B is used. Further, the upper and lower memory chips A and B each have a chip selection terminal, and the active level of the chip selection terminal can be set to high or low when writing storage information.

次に、各メモリチップA,Bを良品と不良品とに選別す
る。
Next, each of the memory chips A and B is sorted into non-defective products and defective products.

良品の上位メモリチップAを中心にして考えると、■両
隣とも良品の下位メモリチップB、■右側が良品で左側
が不良品の下位メモリチンプB、■右側が不良品で左側
が良品の下位メモリチップB、■両隣とも不良品の下位
メモリチップB、の4通りに場合分けすることができる
。少なくとも、良品の上位メモリチップAと下位メモリ
チップBとが隣合っていれば、1つのマスクROMを形
成するこどができるのであるから、■の場合以外は1つ
のマスクROMチップ100を得ることができる。そこ
で、良品同士の上位メモリチップAと下位メモリチップ
Bとを1組としてグイシングして1つのマスクROMチ
ップ100を得る。この時、上位メモリチップAと下位
メモリチンプBとの配列は第1図(b)、(C)に示す
ように2種類ある。
If we focus on a good upper memory chip A, we can see: ■Lower memory chip B is good on both sides, ■Lower memory chip B is good on the right and defective on the left, ■Lower memory chip is defective on the right and good on the left. The cases can be divided into four cases: (1) lower memory chip B, which is defective on both sides. At least, if good upper memory chip A and lower memory chip B are adjacent to each other, it is possible to form one mask ROM. Therefore, except in case (2), one mask ROM chip 100 can be obtained. I can do it. Therefore, one mask ROM chip 100 is obtained by guising the upper memory chip A and the lower memory chip B, which are good products, as a pair. At this time, there are two types of arrangement of the upper memory chip A and the lower memory chip B, as shown in FIGS. 1(b) and 1(C).

このマスクROMチップ100をリードフレームにホン
ディングし、封止樹脂で封止する組立工程を経て1つの
マスクROMが完成する。なお、−F位メモリチップA
と下位メモリ千ップBとの接続は、マスクROMチップ
100をボンディングずろリードフレーム上又はマスク
ROMを実装する基板上で行う。
One mask ROM is completed through an assembly process in which this mask ROM chip 100 is bonded to a lead frame and sealed with a sealing resin. In addition, -F position memory chip A
The connection between the mask ROM chip 100 and the lower memory chip B is performed by bonding the mask ROM chip 100 on a lead frame or on a substrate on which the mask ROM is mounted.

前記実施例は、上位メモリチップAと下位メモリチップ
Bとの2つの機能ブロックからなるマスクROMについ
て説明したが、本発明は次のように4つの機能ブロック
からなる場合にも適用することができる。
Although the above embodiment describes a mask ROM consisting of two functional blocks, an upper memory chip A and a lower memory chip B, the present invention can also be applied to a case consisting of four functional blocks as follows. .

この実施例に係る半導体チップ100は、A,B、C及
びDの4つの機能ブロックから構成される。
The semiconductor chip 100 according to this embodiment is composed of four functional blocks A, B, C, and D.

この4つの機能ブロックA−Dを第2図(a)に示すよ
うに配列する。すると、1つの半導体チップ100を構
成ずる4つの機能ブロックA〜Dは、第21F(b)〜
(e)に示す4種類の配列で組み合ね・Uが可能である
These four functional blocks A to D are arranged as shown in FIG. 2(a). Then, the four functional blocks A to D constituting one semiconductor chip 100 are 21F(b) to
Combination U is possible with the four types of arrangement shown in (e).

この場合は、各機能ブロックA−Dの上下辺に沿ってボ
ンディングパッド30を形成するが、上下のボンディン
グバット30は全く同一に形成しなければならない。な
ぜならば、上下どちらのボンディングパット30が半導
体チップ100の外縁部になるか、各機能ブロックA−
Dを形成した時点では確定していないからである。
In this case, bonding pads 30 are formed along the upper and lower sides of each functional block A to D, but the upper and lower bonding pads 30 must be formed in exactly the same manner. This is because each functional block A-
This is because it has not been determined at the time when D is formed.

なお、上述した実施例ではマスクROMを半導体チップ
の例としたが、本発明がこれに限定されるわけではなく
、複数の機能ブロックからなる半導体ヂップであればど
のようなもの、例えば機能の全く異なるチンプを組み合
わせた複合チップにも適用することが可能である。
In the above-described embodiments, the mask ROM is used as an example of a semiconductor chip, but the present invention is not limited to this, and any semiconductor chip consisting of a plurality of functional blocks may be used. It is also possible to apply it to a composite chip that combines different chimps.

〈発明の効果〉 本発明に係る半導体チップの製造方法は、複数の機能ブ
ロックからなる半導体チップを製造する半導体チップの
製造方法において、複数の機能ブロノクを同一ウェハに
隣接して形成する工程と、前記機能ブロノクを良品と不
良品とに選別する工程と、良品かつ隣接する複数の機能
ブロックを1つの半導体チップとしてダイシングする工
程とから構成されるので、従来より半導体チップの歩留
りを向上させることができる。
<Effects of the Invention> The method for manufacturing a semiconductor chip according to the present invention is a method for manufacturing a semiconductor chip for manufacturing a semiconductor chip consisting of a plurality of functional blocks, including the step of forming a plurality of functional blocks adjacent to the same wafer; This method is comprised of a process of sorting the functional blocks into good and defective products, and a process of dicing a plurality of non-defective and adjacent functional blocks as one semiconductor chip, so it is possible to improve the yield of semiconductor chips compared to conventional methods. can.

特に、マスクROM等の半導体メモリは、チンプサイス
が増大するほど歩留りが悪化する傾向があるので、本発
明のように1つの半導体チップを複数の機能ブロックに
分割してそれぞれのチップサイズを小さくすることが歩
留り向上の有効な手段になる。
In particular, in semiconductor memories such as mask ROMs, the yield tends to deteriorate as the chip size increases, so it is possible to divide one semiconductor chip into multiple functional blocks and reduce the chip size of each as in the present invention. is an effective means of improving yield.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は本発明の一実施例を示す説明図、第2図は他の
実施例を示す説明図である。 10・・・ウェハ、100  ・・・マスクROMチッ
プ(半導体チップ)、A・・・上位メモリチ・ノブ、B
・・・下位メモリチップ。
FIG. 1 is an explanatory diagram showing one embodiment of the present invention, and FIG. 2 is an explanatory diagram showing another embodiment. 10... Wafer, 100... Mask ROM chip (semiconductor chip), A... Upper memory chip knob, B
...lower memory chip.

Claims (1)

【特許請求の範囲】[Claims] (1)複数の機能ブロックからなる半導体チップを製造
する半導体チップの製造方法において、複数の機能ブロ
ックを同一ウェハに隣接して形成する工程と、前記機能
ブロックを良品と不良品とに選別する工程と、良品かつ
隣接する複数の機能ブロックを1つの半導体チップとし
てダイシングする工程とを具備したことを特徴とする半
導体チップの製造方法。
(1) In a semiconductor chip manufacturing method for manufacturing a semiconductor chip consisting of a plurality of functional blocks, a step of forming a plurality of functional blocks adjacent to the same wafer, and a step of sorting the functional blocks into good and defective products. and dicing a plurality of non-defective and adjacent functional blocks into one semiconductor chip.
JP2011142A 1990-01-19 1990-01-19 Manufacture of semiconductor chip Pending JPH03214764A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2011142A JPH03214764A (en) 1990-01-19 1990-01-19 Manufacture of semiconductor chip

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2011142A JPH03214764A (en) 1990-01-19 1990-01-19 Manufacture of semiconductor chip

Publications (1)

Publication Number Publication Date
JPH03214764A true JPH03214764A (en) 1991-09-19

Family

ID=11769772

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2011142A Pending JPH03214764A (en) 1990-01-19 1990-01-19 Manufacture of semiconductor chip

Country Status (1)

Country Link
JP (1) JPH03214764A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5581205A (en) * 1993-12-30 1996-12-03 Nec Corporation Semiconductor device capable of assembling adjacent sub chips into one chip
US5909052A (en) * 1986-03-12 1999-06-01 Hitachi, Ltd. Semiconductor device having plural chips with the sides of the chips in face-to-face contact with each other in the same crystal plane
US5968150A (en) * 1986-03-12 1999-10-19 Hitachi, Ltd. Processor element having a plurality of CPUs for use in a multiple processor system
US6091156A (en) * 1996-09-02 2000-07-18 Nec Corporation Semiconductor pellet having plural chips
JP2001203315A (en) * 1999-11-29 2001-07-27 Lucent Technol Inc Cluster packaging of ic chip for multi-chip package
KR100562223B1 (en) * 1997-09-25 2006-06-13 지멘스 악티엔게젤샤프트 Method of maximizing chip yield for semiconductor wafers

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5909052A (en) * 1986-03-12 1999-06-01 Hitachi, Ltd. Semiconductor device having plural chips with the sides of the chips in face-to-face contact with each other in the same crystal plane
US5968150A (en) * 1986-03-12 1999-10-19 Hitachi, Ltd. Processor element having a plurality of CPUs for use in a multiple processor system
US6379998B1 (en) * 1986-03-12 2002-04-30 Hitachi, Ltd. Semiconductor device and method for fabricating the same
US5581205A (en) * 1993-12-30 1996-12-03 Nec Corporation Semiconductor device capable of assembling adjacent sub chips into one chip
US6091156A (en) * 1996-09-02 2000-07-18 Nec Corporation Semiconductor pellet having plural chips
KR100562223B1 (en) * 1997-09-25 2006-06-13 지멘스 악티엔게젤샤프트 Method of maximizing chip yield for semiconductor wafers
JP2001203315A (en) * 1999-11-29 2001-07-27 Lucent Technol Inc Cluster packaging of ic chip for multi-chip package

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