JPH03212970A - Ferroelectric device - Google Patents
Ferroelectric deviceInfo
- Publication number
- JPH03212970A JPH03212970A JP873190A JP873190A JPH03212970A JP H03212970 A JPH03212970 A JP H03212970A JP 873190 A JP873190 A JP 873190A JP 873190 A JP873190 A JP 873190A JP H03212970 A JPH03212970 A JP H03212970A
- Authority
- JP
- Japan
- Prior art keywords
- ferroelectric
- tin
- electrode
- present
- ferroelectric device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000463 material Substances 0.000 claims abstract description 11
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims abstract description 9
- 238000006243 chemical reaction Methods 0.000 abstract description 7
- 238000000034 method Methods 0.000 abstract description 3
- 229910002113 barium titanate Inorganic materials 0.000 abstract 1
- 239000007772 electrode material Substances 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 3
- 239000011521 glass Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 229910052774 Proactinium Inorganic materials 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 229910000510 noble metal Inorganic materials 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Landscapes
- Ceramic Capacitors (AREA)
- Semiconductor Integrated Circuits (AREA)
Abstract
Description
【発明の詳細な説明】
［産業上の利用分野］
本発明は強誘電体装置の電極材料構成に関する［従来の
技術］
従来、強誘電体装置は、Ｐｔ、Ｐａ、Ｒｈ等の貴金属電
極に挾んで強誘電体を形成するのが通例であった。[Detailed Description of the Invention] [Industrial Application Field] The present invention relates to an electrode material configuration of a ferroelectric device [Prior Art] Conventionally, a ferroelectric device has a structure in which noble metal electrodes such as Pt, Pa, Rh, etc. are sandwiched between ferroelectric devices. It was customary to form a ferroelectric material by using
［発明が解決しようとする課題］
しかし、上記従来技術によると、強誘電体と電極との反
応が抑制されはするが、コストが高いと云う課題があっ
た。[Problems to be Solved by the Invention] However, although the above-mentioned conventional technology suppresses the reaction between the ferroelectric material and the electrode, there is a problem that the cost is high.
本発明は、かかる従来技術を解決し、強誘電体との反応
が抑制でき、且つ、低コストの新らしい強誘電体装置用
の電極材料構成を提供する事を目的とする。It is an object of the present invention to solve this conventional technique and provide a new electrode material configuration for a ferroelectric device that can suppress reactions with ferroelectric materials and is low in cost.
［課題を解決するための手段］
上記課題を解決するために、本発明は強誘電体装置に関
し、少（とも強誘電体と接する電極材料をＴｉＮとなす
手段をとる事を基本とする。[Means for Solving the Problems] In order to solve the above-mentioned problems, the present invention relates to a ferroelectric device, and is based on a method in which the electrode material in contact with the ferroelectric material is TiN.
［実施例コ 以下；実施例により本発明を詳述する。[Example code] Hereinafter, the present invention will be explained in detail with reference to Examples.
第１図は本発明の一実施例で且つ本発明の基本構成を示
す強誘電体装置の断面図である。すなわち、ＢａＴｉＯ
３、ＰｂＺｒＴｉＯ３（ＰＺＴ）、Ｐｂ５Ｇｅ、Ｏ，、
、Ｂｉ、Ｔｉ、Ｏ，！等から成る強誘電体２は２つのＴ
ｉＮ（１）１及びＴ ｉ Ｎ （２１５から成る電極に
挾まれて成る。FIG. 1 is a sectional view of a ferroelectric device which is an embodiment of the present invention and shows the basic configuration of the present invention. That is, BaTiO
3. PbZrTiO3 (PZT), Pb5Ge, O,,
, Bi, Ti, O,! The ferroelectric material 2 consists of two T
It is sandwiched between electrodes consisting of iN(1)1 and T i N (215).
第２図は、本発明の他の実施例を示す半導体装置上の強
誘電体装置の断面図である。すなわち、８１１１の基板
には拡散層１２及びＳｉＯ□１３から成る半導体装置が
有り、該半導体装置の前記拡散層１２上にはＴ１膜をス
パッタ蒸着して形成後、窒素雰囲気中にて加熱処理する
ことにより下地Ｓ１から成る拡散層１２との反応層とし
てのＴｉ５ｉ１４と、窒素雰囲気との反応層Ｔ ｉ Ｎ
ｆＪ）１５を形成するか、あるいは、ＴｉＮをスパッ
タ蒸着して形成する等して、下部電極となし、該下部電
極上にスパッタ蒸着やゾル、ゲル法等により前記例示材
料と同様の強誘電体膜１６を形成後、スパッタ蒸着等に
より上部電極としてＴ ｉ Ｎ （２１１７を形成後、
ガラス１８を形成し、引出し電像として前記ＴｉＮ（２
１１７の上部電極に接続してＡｔ１９を形成したもので
ある。FIG. 2 is a cross-sectional view of a ferroelectric device on a semiconductor device showing another embodiment of the present invention. That is, the substrate of 8111 has a semiconductor device consisting of a diffusion layer 12 and SiO By this, Ti5i14 as a reaction layer with the diffusion layer 12 consisting of the base S1 and a reaction layer T i N with the nitrogen atmosphere.
fJ) 15 or sputter-deposited TiN to form a lower electrode, and a ferroelectric material similar to the above-mentioned exemplified material is formed on the lower electrode by sputter-deposition, sol, gel method, etc. After forming the film 16, T i N (2117) is formed as an upper electrode by sputter deposition or the like.
A glass 18 is formed, and the TiN (2
At 19 is formed by connecting to the upper electrode of 117.
［発明の効果コ
本発明により、強誘電体と電極との反応が抑制され、且
つ低コストの電極材料による強誘電体装置を提供するこ
とができるという効果がある。[Effects of the Invention] The present invention has the effect of suppressing the reaction between the ferroelectric and the electrode and providing a ferroelectric device using low-cost electrode materials.
第１図及び第２図は本発明の実施例を示す強誘電体装置
の要部の断面図である。
１ ・・・・・・・・・ Ｔ ｉ Ｎ （１）２・
・・・・・・・・強誘電体
３ ・・・・・・・・・ Ｔ ｉ Ｎ Ｔ２）１１
・・・・・・ ５１
１２・・・・・・拡散層
１３・・・・・・５１０２
１４ ・・―・・・ Ｔｉ５ｉ
１５ ・・・・・・ Ｔ ｉ Ｎ （１）１６・・
・・・・強誘電体膜
１７・・・・・・Ｔ ｉ Ｎ （２＋
１８・・・・・・ガラス
１９ ・・・・・・ Ａ ｔ1 and 2 are cross-sectional views of essential parts of a ferroelectric device showing an embodiment of the present invention. 1 ・・・・・・・・・ T i N (1)2・
...... Ferroelectric 3 ...... T i N T2)11
......51 12...Diffusion layer 13...5102 14...Ti5i 15...T i N (1)16...
...Ferroelectric film 17...T i N (2+ 18...Glass 19...A t
Claims (1)
る事を特徴とする強誘電体装置。A ferroelectric device characterized in that the ferroelectric material is sandwiched between two electrodes made of TiN.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP873190A JPH03212970A (en) | 1990-01-18 | 1990-01-18 | Ferroelectric device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP873190A JPH03212970A (en) | 1990-01-18 | 1990-01-18 | Ferroelectric device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH03212970A true JPH03212970A (en) | 1991-09-18 |
Family
ID=11701101
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP873190A Pending JPH03212970A (en) | 1990-01-18 | 1990-01-18 | Ferroelectric device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH03212970A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05211286A (en) * | 1992-01-06 | 1993-08-20 | Nec Corp | Method for manufacturing capacitor element |
| JPH05243486A (en) * | 1992-02-19 | 1993-09-21 | Nec Corp | Capacitance element and its manufacture |
-
1990
- 1990-01-18 JP JP873190A patent/JPH03212970A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05211286A (en) * | 1992-01-06 | 1993-08-20 | Nec Corp | Method for manufacturing capacitor element |
| JPH05243486A (en) * | 1992-02-19 | 1993-09-21 | Nec Corp | Capacitance element and its manufacture |
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